Abstract: A back-illuminated image sensor includes a first pixel, a second pixel, and a channel stop situated between the first pixel and the second pixel to isolate the first pixel from the second pixel. The channel stop includes a LOCOS structure and a region of doped silicon beneath the LOCOS structure. The back-illuminated image sensor also includes a first electrically conductive contact that extends through the LOCOS structure and forms an ohmic contact with the region of doped silicon. The first electrically conductive contact may be grounded, negatively biased, or positively biased, depending on the application.

Abstract: An imaging device includes a photodiode having a first electrode and a second electrode, a first transistor that controls electrical connection between the first electrode and a first wiring line through which first voltage is supplied, and a second transistor that controls electrical connection between the first electrode and a second wiring line through which second voltage different from the first voltage is supplied, and voltage at the second electrode is read with the first transistor and the second transistor turned off.

Abstract: In various embodiments, a time-delay-and-integrate (TDI) image sensor includes (i) a plurality of integrating CCDs (ICCDs), arranged in parallel, that accumulate photocharge in response to exposure to light, (ii) electrically coupled to the plurality of ICCDs, a readout CCD (RCCD) for receiving photocharge from the plurality of ICCDs, and (iii) electrically coupled to the RCCD, readout circuitry for converting charge received from the RCCD into voltage.

Abstract: A pixel cell and imaging arrays using the same are disclosed. The pixel cell includes a photodiode that is connected to a floating diffusion node by a transfer gate that couples the photodiode to the floating diffusion node in response to a first gate signal. A shielding electrode shields the floating diffusion node from the first gate signal. An output stage generates a signal related to a charge on the floating diffusion node. In one aspect of the invention, the photodiode is connected to the floating diffusion node by a buried channel, and the shielding electrode includes an electrode overlying the channel and positioned between the transfer gate and the floating diffusion node. The shielding electrode is held at a potential that prevents charge from accumulating under the shielding electrode when the floating diffusion is at the second potential.

Abstract: In the solid-state imaging apparatus, the carrier holding portion is arranged at a position in a first direction from a photoelectric conversion portion, a floating diffusion region is arranged at a position in a second direction perpendicular to the first direction from the carrier holding portion with a transfer portion sandwiched between the floating diffusion region and the carrier holding portion, the carrier holding portion included in the first pixel is arranged between the photoelectric conversion portion included in the first pixel and the photoelectric conversion portion included in the second pixel, the carrier holding portion included in the first pixel is covered with a light shielding portion, and the light shielding portion extends over a part of each of the photoelectric conversion portions included in the first and second pixels.

Abstract: A method for controlling a pixel including at least one photodiode capable of being connected to a sense node, the method including the steps of: a) at the beginning and at the end of a first integration period included within a second integration period, controlling the pixel to transfer the charges stored in the photodiode above a first threshold onto the sense node; and b) at an intermediate time between the beginning of the second period and the beginning of the first period, controlling the pixel to transfer the charges stored in the photodiode above the first threshold onto the sense node.

Abstract: According to one embodiment, a solid-state imaging device includes an image sensor including a valid pixel area having valid pixels and a light-blocking pixel area having light-blocking pixels to generate an image signal; and a clamp circuit that detects an overflow of a signal charge and executes a black level signal processing for the image signal using a parameter. The clamp circuit detects the overflow using an integration value of the signals of the light-blocking pixels integrated in a direction from the light-blocking pixel area to the valid area, and sets the parameter generated from the output signals of the light-blocking pixels substantially not influenced by the overflow based on a result of the detection.

Abstract: A solid-state imaging device includes: a plurality of substrates stacked via a wiring layer or an insulation layer; a light sensing section that is formed in a substrate, of the plurality of substrates, disposed on a light incident side and that generates a signal charge in accordance with an amount of received light; and a contact portion that is connected to a non-light incident-surface side of the substrate in which the light sensing section is formed and that supplies a desired voltage to the substrate from a wire in a wiring layer disposed on a non-light incident side of the substrate.

Abstract: Pixels for solid-state CMOS image sensor arrays may be provided that have a lateral blooming control structure incorporated in them. The lateral blooming control structure is built as a separate structure from the charge transfer gate and it is fabricated in a self-aligned manner, which is particularly suitable for incorporating into small size pixels. The blooming control structure can be used for backside or for front side illuminated image sensors. When the lateral blooming control structure is provided with a separate bias means, it may also be used for the complete or partial charge removal from the photodiode and thus used in pixels that are designed for global shutter operation.

Abstract: Disclosed are a CMOS image sensor having a wide dynamic range and a sensing method thereof. Each unit pixel of the CMOS image sensor of the present invention includes multiple processing units, so that one shuttering section for the image generation of one image frame can be divided into multiple sections to separately shutter and sample the divided sections by each processing unit. Thus, the image sensor of the present invention enables many shuttering actions to be performed in the multiple processing units, respectively, and the multiple processing units to separately sample each floating diffusion voltage caused by the shuttering actions, thereby realizing a wide dynamic range.

Abstract: A solid-state imaging device includes a plurality of pixels, each of which includes a photoelectric converter section formed on a first substrate to generate and accumulate signal charges corresponding to incident light, a charge accumulation capacitor section formed on the first substrate or a second substrate to temporarily hold the signal charges transferred from the photoelectric converter section, and a plurality of MOS transistors formed on the second substrate to transfer the signal charges accumulated in the charge accumulation capacitor section, connection electrodes formed on the first substrate, and connection electrodes formed on the second substrate and electrically connected to the connection electrodes formed on the first substrate.

Abstract: There is provided a solid-state image sensor including a plurality of unit pixels each including a photoelectric transducer generating a charge corresponding to an amount of incident light and accumulating the charge therein, a first transfer gate transferring the charge accumulated in the photoelectric transducer, a charge holding region where the charge is held, a second transfer gate transferring the charge, a floating diffusion region where the charge is held to be read out as a signal, a charge discharging gate transferring the charge to a charge discharging part, and a structure including an overflow path formed in a boundary portion between the photoelectric transducer and the charge holding region.

Abstract: A photometric device includes a storage-type photometric sensor, a first control means that performs accumulation control on the photometric sensor based upon an average value of an output of the photometric sensor, a second control means that performs accumulation control on the photometric sensor based upon a maximum value of the output of the photometric sensor, and an accumulation control means that controls the second control means to perform next accumulation control, if the maximum value of the output of the photometric sensor on which the accumulation control is performed by the first control means exceeds a saturation output level of the photometric sensor, and controls the first control means to perform next accumulation control, if the maximum value of the output of the photometric sensor does not exceed the saturation output level of the photometric sensor.

Abstract: An image pickup apparatus and a method thereof are provided. The apparatus includes a sensor array and an ADC array. The sensor array includes M×N sensor blocks SB(i,j). The sensor block includes P×Q image sensing elements Se(x,y). The ADC array is located at another side of the illuminated side of the sensor array. The ADC array includes M×N ADCs ADC(i,j). The ADC(i,j) coupled to the sensor block SB(i,j) obtains the image data Data(x,y) from the image sensing element Se(x,y) of the sensor block SB(i,j). The ADC(i,j) evaluates the gain G(x,y) based on the position of the image sensing element Se(x,y). The compensated image data Datacom(x,y) can be outputted and Datacom(x,y)=Data(x,y)×G(x,y). The image pickup apparatus could improve the optical shading problem.

Abstract: An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11, a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N11, an amplifier transistor 13 for outputting the signal of the floating node N11 to a vertical signal line 22, and a reset transistor 14 for resetting the floating node N11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example ?1V).

Abstract: A solid-state imaging device includes: a plurality of substrates stacked via a wiring layer or an insulation layer; a light sensing section that is formed in a substrate, of the plurality of substrates, disposed on a light incident side and that generates a signal charge in accordance with an amount of received light; and a contact portion that is connected to a non-light incident-surface side of the substrate in which the light sensing section is formed and that supplies a desired voltage to the substrate from a wire in a wiring layer disposed on a non-light incident side of the substrate.

Abstract: An solid state image pickup device including a plurality of photoelectric conversion regions (PD1, PD2) for generating carriers by photoelectric conversions to accumulate the generated carriers, an amplifying unit for amplifying the carriers, being commonly provided to at least two photoelectric conversion regions, a first and a second transfer units (Tx-MOS1, Tx-MOS2) for transferring the carriers accumulated in the first and the second photoelectric conversion regions, respectively, a first and a second carrier accumulating units (Cs1, Cs2) for accumulating the carriers flowing out from the first and the second photoelectric conversion regions through a first and a second fixed potential barriers, respectively, and a third and a fourth transfer units (Cs-MOS1, Cs-MOS2) for transferring the carriers accumulated in the first and the second carrier accumulating units to the amplifying unit, respectively.

Abstract: According to one embodiment, a solid-state imaging device includes a photoelectric conversion section, first circuit, second circuit, and third circuit. The photoelectric conversion section generates signal charge corresponding to the intensity of the irradiation light. The first circuit reads the signal charge generated by the photoelectric conversion section. The second circuit detects that the signal charge in the photoelectric conversion section has overflowed. The third circuit produces a signal corresponding to the time elapsed from the start of generation of the signal charge in the photoelectric conversion section, and holds and reads the signal at a timing at which the overflow has been detected by the second circuit.

Abstract: A method, of selectively reading less than all information from an image sensor for which member-pixels of a subset of the entire set of pixels are individually addressable, may include: sampling information from a targeted member-pixel of the subset without having to read information from the entire set of pixels; and adaptively reading information from another one or more but fewer than all member pixels of the entire set based upon the sampling information without having to read all pixels on the image sensor. A related digital camera may include features similar to elements of the method.

Abstract: An solid state image pickup device including a plurality of photoelectric conversion regions (PD1, PD2) for generating carriers by photoelectric conversions to accumulate the generated carriers, an amplifying unit for amplifying the carriers, being commonly provided to at least two photoelectric conversion regions, a first and a second transfer units (Tx-MOS1, Tx-MOS2) for transferring the carriers accumulated in the first and the second photoelectric conversion regions, respectively, a first and a second carrier accumulating units (Cs1, Cs2) for accumulating the carriers flowing out from the first and the second photoelectric conversion regions through a first and a second fixed potential barriers, respectively, and a third and a fourth transfer units (Cs-MOS1, Cs-MOS2) for transferring the carriers accumulated in the first and the second carrier accumulating units to the amplifying unit, respectively.

Abstract: In the solid-state imaging apparatus, the carrier holding portion is arranged at a position in a first direction from a photoelectric conversion portion, a floating diffusion region is arranged at a position in a second direction perpendicular to the first direction from the carrier holding portion with a transfer portion sandwiched between the floating diffusion region and the carrier holding portion, the carrier holding portion included in the first pixel is arranged between the photoelectric conversion portion included in the first pixel and the photoelectric conversion portion included in the second pixel, the carrier holding portion included in the first pixel is covered with a light shielding portion, and the light shielding portion extends over a part of each of the photoelectric conversion portions included in the first and second pixels.

Abstract: An imaging apparatus includes a control unit and a detector that includes multiple pixels and that performs an image capturing operation to output image data corresponding to radiation or light that is emitted. The image capturing operation includes a first image capturing operation in a first scanning area corresponding to part of the multiple pixels to output image data in the first scanning area and a second image capturing operation in a second scanning area larger than the first scanning area to output image data in the second scanning area. The control unit causes the detector to perform an accumulation operation in the second image capturing operation in a time determined so that an image artifact caused by the scanning area is lower than a predetermined allowable value on the basis of information about the amount of integration of accumulation times in the first image capturing operation.

Abstract: The present invention relates to improved imaging devices having high dynamic range and to monitoring and automatic control systems incorporating the improved imaging devices.

Abstract: A solid-state image pickup device 1 includes: a plurality of photoelectric converters 2 which are aligned in a predetermined direction and have a potential made higher toward one side of a direction crossing the predetermined direction; a transferring section 6 which is provided on one side of the photoelectric converters 2 in the direction crossing the predetermined direction and transfers charges generated in the photoelectric converters 2 in the predetermined direction; an unnecessary charge discharging drain 7 which is provided adjacent to the photoelectric converter 2 along the direction crossing the predetermined direction and discharges unnecessary charges generated in the photoelectric converter 2 from the photoelectric converter 2; and an unnecessary charge discharging gate 8 which is provided between the photoelectric converter 2 and the unnecessary charge discharging drain 7 and selectively performs cutting-off and release of the flow of unnecessary charges from the photoelectric converter 2 to the

Abstract: A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.

Abstract: A solid-state image pickup device includes a plurality of light sensing sections; a plurality of vertical transfer registers configured to transfer signal charge of the plurality of light sensing sections in the vertical direction; a horizontal transfer register configured to transfer the signal charge in the horizontal direction; a floating gate amplifier that is placed at an output side of the horizontal transfer register; a floating diffusion amplifier that is placed in a horizontal transfer register which is provided at a stage subsequent to the floating gate amplifier; and an overflow drain mechanism that is placed in the horizontal transfer register between the floating gate amplifier and the floating diffusion amplifier.

Abstract: A method for acquiring images using at least one CMOS-type sensor with four transistors including an acquisition node and a read node, where the read node can receive a compression signal, including a step of reading a reference state of the sensor; a reset step; an integration step, during which the sensor is exposed and during part of which the compression signal is applied to the read node; and a step of reading the data acquired during the integration step; the read node being, during the integration step, isolated from the acquisition node, except immediately before the application of the compression signal, at which time the acquisition node is connected to the read node long enough to enable a transfer of the charges present at the acquisition node to the read node.

Abstract: The least significant bits of respective count values of an H counter and a V counter are combined, to generate a timing signal defining a 2×2-size repeat block. A timing register including four registers each storing data which determines a color of each location within the repeat block is provided for each of input channels. A selector selects one of outputs of the timing registers based on the timing signal, and generates a signal designating a color of a pixel at a certain time for each of the input channels. A register storing black level correction data for each color is used in common by the input channels. For each of the input channels, an item of black level correction data at the certain time is selected based on the signal designating the color of the pixel at the certain time and input to a pre-processing circuit in each of the input channels.

Abstract: A solid-state imaging device includes a plurality of pixels stored in one-dimensional or two-dimensional array, each of the plurality of pixels including a photodiode receiving light and producing photocharges, an overflow gate coupled to the photodiode and transferring photocharges that overflow the photodiode during a storage operation, and a storage capacitor element that stores the photocharges transferred by the overflow gate during the storage operation.

Abstract: In accordance with an embodiment of the present invention, an image sensor comprises a plurality of pixel sensing circuits. Each pixel sensing circuit includes a photodiode and a storage node. Each pixel sensing circuit further includes a first transistor coupled between the photodiode and the storage node and a second transistor coupled between the photodiode and a shared node. The shared node is coupled to the plurality of pixel sensing circuits. The image sensor may include a reset transistor and/or a read-out circuit coupled to the shared node.

Abstract: At least one exemplary embodiment is directed to an image input apparatus including a plurality of pixel sections, each including a light-sensitive element configured to generate electric charge by photoelectric conversion, a semiconductor region configured to receive a signal transferred from the light-sensitive element, and a transfer switch configured to transfer the signal from the light-sensitive element to the semiconductor region. An image is formed based on a composite signal obtained by combining a saturation signal representing photoelectric charge overflowing from the light-sensitive element and flowing into the semiconductor region and a photoelectric conversion signal stored in the light-sensitive element. Formation of the image is controlled based on a corrected composite signal obtained by correcting a component corresponding to a noise component.

Abstract: An imaging array and method for using the same to capture an image are disclosed. The imaging array includes an array of pixel sensors and a controller. Each pixel sensor includes a dual-ported photodiode characterized by ports having first and second gates, and a charge conversion circuit. The charge conversion circuit generates a signal that is a function of a charge on the dual-ported photodiode when the first gate in the dual-ported photodiode is activated to transfer a charge on the dual-ported photodiode to the charge conversion circuit. The controller applies a potential to the second gates and measures a current flowing out of the second gates, each second port passing charge stored in the photodiode connected to the second port when a potential in the photodiode exceeds the applied potential. The controller determines an average light intensity incident on the array of pixel sensors.

Abstract: An imaging system utilizes an exposure control circuit to control the length of an exposure in full frame mode. The exposure control circuit receives as an input the antiblooming current from at least a representative sample of pixels and determines when to end an exposure based on the amount of current received.

Abstract: Providing a solid-state imaging device having a degree of freedom capable of changing which of the pixels functions as a pixel having a photoelectric converter portion bisected in which direction. When a gate electrode 67 is high and a gate electrode 68 is high, photodiodes 31 through 34 are electrically connected each other. When the gate electrode 67 is high and the gate electrode 68 is low, photodiodes 31 and 32, and photodiodes 33 and 34 are electrically connected each other. On the other hand, photodiodes 31 and 33, and photodiodes 32 and 34 are electrically separated. When the gate electrode 67 is low and the gate electrode 68 is high, photodiodes 31 and 32, and photodiodes 33 and 34 are electrically separated. On the other hand, photodiodes 31 and 33, and photodiodes 32 and 34 are electrically connected with each other.

Abstract: An image processing apparatus (5) that corrects an input image signal (Xin) pixel by pixel to generate a corrected image signal (Xout), having a filtering means (2) that determines a luminance distribution of a pixel to be corrected and pixels neighboring the pixel to be corrected, a correction gain calculation means (3) that determines the correction gain of the pixel to be corrected, and an operation means (4) that uses the correction gain determined by the correction gain calculation means to perform an operation on the input image signal pixel by pixel. With this simple configuration, the dynamic range of the input image can be appropriately improved.

Abstract: The present invention relates to improved imaging devices having high dynamic range and to monitoring and automatic control systems incorporating the improved imaging devices.

Abstract: One or more charge storage regions in a charge-coupled device (CCD) shift register can contain residual charge that did not transfer to a reset drain during a reset operation. An image sensor drains the residual charge from each charge storage region by shifting the residual charge to an adjacent charge storage region and resetting the CCD shift register one more time. The process of resetting the CCD shift register, shifting the residual non-image charge to an adjacent charge storage region, and resetting the CCD shift register again can be repeated any number of times.

Abstract: An imaging array and method for capturing an image utilizing the same are disclosed. The imaging array includes an array of pixel sensors in which each pixel includes a dual-ported photodiode or photogate and a charge conversion circuit. The charge conversion circuit generates a voltage signal that is a function of a charge on the dual-ported photodiode. The controller applies a potential that varies over the exposure to the second gates in the dual-ported photodiodes, each second port passing charge stored in the photodiode connected to the second port when a potential in the photodiode exceeds the applied potential. The potential is chosen such that charge flows through the second gates of pixel sensors that are exposed to light intensities greater than a first threshold intensity during the exposure.

Abstract: A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.

Abstract: This device for detecting an electromagnetic radiation, comprises a matrix of juxtaposed elementary sensors (1), each associated with a common substrate in which a sequential addressing read circuit is prepared, specific to each of the sensors, thereby constituting as many pixels, the interaction of the radiation with the sensors generating electric charges to be converted to voltage for their subsequent processing, each of the said sensors being biased via an injection transistor (2), of which one of the terminals is connected to an integration capacitance (3), storing the electric charges generated by the sensor during an integration phase, and whereof the quantity of charges is then processed for conversion to voltage. Each of the pixels of the said matrix is associated with a current limiting device (5), for limiting the current generated by each of the elementary sensors to a maximum called reference current, regardless of the radiation flux received by the pixel concerned.

Abstract: In certain embodiments, a unit cell is provided. The unit cell may include a high sensitivity path and a low sensitivity path. The high sensitivity path may include a first transistor and a first switch. The first switch may couple an output node to the first transistor. The low sensitivity path may include a capacitor. A second switch may couple the high sensitivity path to the low sensitivity path. A third switch may couple the high sensitivity path and the low sensitivity path to a voltage node.

Abstract: A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional exemplary embodiments also employ an anti-blooming transistor in conjunction with the dual pinned photosensor. Other exemplary embodiments provide a pixel with two pinned voltage regions and two anti-blooming transistors. Methods of fabricating the exemplary pixel cells are also disclosed.

Abstract: An solid state image pickup device including a plurality of photoelectric conversion regions (PD1, PD2) for generating carriers by photoelectric conversions to accumulate the generated carriers, an amplifying unit for amplifying the carriers, being commonly provided to at least two photoelectric conversion regions, a first and a second transfer units (Tx-MOS1, Tx-MOS2) for transferring the carriers accumulated in the first and the second photoelectric conversion regions, respectively, a first and a second carrier accumulating units (Cs1, Cs2) for accumulating the carriers flowing out from the first and the second photoelectric conversion regions through a first and a second fixed potential barriers, respectively, and a third and a fourth transfer units (Cs-MOS1, Cs-MOS2) for transferring the carriers accumulated in the first and the second carrier accumulating units to the amplifying unit, respectively.

Abstract: A semiconductor element comprises: two-dimensionally aligned pixels with a plurality of photoelectric conversion portions that photoelectrically converts incident light into a signal charge; a plurality of vertical transfer paths to which the signal charges are transferred from said plurality of photoelectric conversion portions; and read gates that amplify the signal charges read from the photoelectric conversion portions to transfer to said plurality of vertical transfer paths; wherein two or more of the read gates are formed for each of said plurality of photoelectric conversion portions, and amplification factors of the two or more of the read gates differ from each other.

Abstract: An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components.

Abstract: A solid-state imaging device includes: a pixel array unit wherein a unit pixel group with a portion of elements of a unit pixel being shared with a plurality of unit pixels is arrayed in a matrix form, the unit pixel having a detecting unit, a pixel signal generating unit, a transfer unit to transfer the charge, and an initializing unit to initialize the potential of the pixel signal generating unit; and a driving control unit; wherein the driving control unit controls blooming reduction potential which is the transfer control potential supplied to the transfer unit of the unit pixel to be thinned, so that the overflow charge at the detecting unit with the unit pixel to be thinned which has no shared relation with the unit pixel to be read transitions to a state readily transferable to the pixel signal generating unit side of the unit pixel to be thinned.

Abstract: An imaging system utilizes an exposure control circuit to control the length of an exposure in full frame mode. The exposure control circuit receives as an input the antiblooming current from at least a representative sample of pixels and determines when to end an exposure based on the amount of current received.

Abstract: A pixel unit in which a plurality of pixels shares an accumulating unit for temporarily accumulating charges accumulated in photoelectric conversion devices, is arranged so that a control unit of a photoelectric conversion apparatus is adapted, when an accumulated charge amount of a first photodiode exceeds a saturation charge amount, to effect control in accordance with a first operation to discharge excess charges to a floating diffusion FD, and adapted, when an accumulated charge amount of a second photodiode exceeds a saturation charge amount, to effect control in accordance with a second operation to discharge excess charges to a charge discharge area, thereby expanding a dynamic range.

Abstract: A storage gate pixel operates such that the storage gate is not required to have the same capacity as a photodiode of the pixel. This provides greater fill factor for the pixel and a higher signal to noise ratio.

Abstract: A pixel circuit, and a method for operating a pixel circuit, to provide a multiple knee response characteristic. In one embodiment a pixel circuit comprises a photoconversion device for accumulating charge during a first integration period and second integration period, an integration node connected to the photoconversion device, a first transistor having one terminal connected to said integration node and another terminal connected to a reset signal line and a feed-through pulse capacitor. The feed-through pulse capacitor has one terminal coupled to a feed-through pulse signal line, and a second terminal coupled to the integration node, said feed-through pulse signal line providing an intermediate pulse between the first and second integration periods to generate an overflow current in said the transistor.