Abstract: There is provided an optical sensor that acquires a first image frame corresponding to a first flicker period and acquires a second image frame corresponding to a second flicker period. The optical sensor respectively adds pixel data of every two pixels in neighboring rows of the first image frame and the second image frame to generate a low-resolution image frame for the motion detection.

Abstract: A solid-state imaging device includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes a photoelectric conversion part embedded away from a substrate front surface of a semiconductor substrate, a memory part that holds a charge generated in the photoelectric conversion part, a first transfer transistor, a second transfer transistor, and a third transfer transistor connected in series between the photoelectric conversion part and the memory part, an accumulation part that accumulates the charge transferred from the memory part, and a light shielding part that covers a portion of the memory part facing a substrate rear surface side of the semiconductor substrate and has an opening between the photoelectric conversion part and the substrate front surface.

Abstract: A light sensor (4) in which each of its pixels comprises: first and second MOS transistors (T1, T2) series-connected through their sources (S), a gate of the second transistor (T2) receiving a comparative voltage (Vcmp); a first current source (104) series-connected with said transistors (T1, T2) between a first supply voltage (GND) and a second supply voltage (VDD2); a third MOS transistor (T3) and a second current source (108) series-connected between a third supply voltage (GND) and a fourth supply voltage (VDD1), wherein the third transistor (T3) has a gate connected to a connection node (106) of the first current source (104) to the first and second transistors (T1, T2); a photodiode (PD) coupled to a gate of the first transistor (T1); and a switch (RST) connected to the gate of the first transistor (T1).

Abstract: An analogue to digital converter is provided for digital imaging devices, in which a pixel column is sampled by a respective capacitor. In a reset phase of operation, each pixel in the row under consideration is reset, and an operational amplifier operating in a voltage follower mode is coupled to all the sampling capacitors in parallel to obtain the reset values of the pixels sensors of that row, and the in an imaging phase of operation, the inverting input of the operational amplifier operating in a comparator mode is coupled to each capacitor in turn after activating the respective pixel sensor, while exposing the non inverting signal to an analog ramp reference voltage so that the timing of the toggling of the operational amplifier reflects the value of the pixel under consideration, corrected for the reset value.

Abstract: Solid-state imaging elements are disclosed. In one example, an upstream circuit sequentially generates a predetermined reset level and a signal level corresponding to an exposure amount, and causes first and second capacitive elements to hold the reset level and the signal level. A selection circuit sequentially connects one of the capacitive elements to a predetermined downstream node, disconnects both capacitive elements from the downstream node, and connects the other capacitive element to the downstream node. A downstream reset transistor initializes a level of the downstream node when both capacitive elements are disconnected from the downstream node. A downstream circuit sequentially reads the reset level and the signal level from the first and second capacitive elements via the downstream node and outputs the reset level and the signal level.

Abstract: In a solid-state imaging element that compares a reference signal and a pixel signal with each other, a frame rate is improved. A differential amplifier circuit amplifies a difference in potential between a pair of input nodes and outputs the difference from an output node. A transfer transistor transfers charge from a photoelectric conversion element to a floating diffusion layer. A gate of a source follower transistor is connected to the floating diffusion layer, and a source thereof is connected to one of the pair of input nodes. A measurement unit measures a gate-source voltage of the source follower transistor and supplies a measured value. A correction arithmetic unit arithmetically calculates a correction value for correcting a potential of the other one of the pair of input nodes based on the measured value.

Abstract: The present disclosure relates to a comparator, an AD converter, a solid-state imaging device, an electronic apparatus, and a comparator control method that can reduce power consumption while increasing the determination speed of the comparator. The comparator includes a comparison unit, a positive feedback circuit, and a current limiting unit. The comparison unit compares the voltage of an input signal and the voltage of a reference signal, and outputs a comparison result signal. The positive feedback circuit increases the transition speed at the time when the comparison result signal is inverted. The current limiting unit limits the current flowing in the comparison unit after the inversion of the comparison result signal. The present disclosure can be applied to comparators, for example.

Abstract: A passive amplifier is provided that includes an input sampling switch, a sampling capacitance, and metal-oxide-semiconductor capacitor devices. An input signal may be sampled onto the sampling capacitance by turning on the input sampling switch while the metal-oxide-semiconductor capacitors are activated. After the sampling phase, the metal-oxide-semiconductor capacitors are deactivated to provide a voltage gain. The voltage gain can be conditionally applied depending on the signal level of the sampled input.

Abstract: An imaging device capable of executing image processing is provided. Analog data (image data) acquired through an imaging operation is retained in a pixel, and data obtained by multiplying the analog data by a given weight coefficient in the pixel can be extracted. The data is taken into a neural network or the like, whereby processing such as image recognition can be performed. Since an enormous amount of image data can be retained in pixels in an analog data state, processing can be performed efficiently.

Abstract: A photon counting device includes a plurality of pixels each including a photoelectric conversion element configured to convert input light to charge, and an amplifier configured to amplify the charge converted by the photoelectric conversion element and convert the charge to a voltage, an A/D converter configured to convert the voltages output from the amplifiers of the plurality of pixels to digital values; and a conversion unit configured to convert the digital value output from the A/D converter to the number of photons by referring to reference data, for each of the plurality of pixels, and the reference data is created based on a gain and an offset value for each of the plurality of pixels.

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a mixer circuit including a digital-analog converter circuit, a control circuit for controlling the digital-analog converter circuit, a power source control switch, and a plurality of Gilbert circuits. The plurality of Gilbert circuits each include an analog potential holding circuit for holding an analog potential output from the digital-analog converter circuit. The control circuit has a function of outputting a signal for controlling the analog potential holding circuit and the digital-analog converter circuit. The power source control switch has a function of stopping supply of a power source voltage to the control circuit in a period during which the analog potential held in the analog potential holding circuit is not updated. The analog potential holding circuit includes a first transistor. The first transistor includes a semiconductor layer including an oxide semiconductor in a channel formation region.

Abstract: There is provided an image sensor employing an avalanche diode. The image sensor includes a plurality of pixel circuits arranged in a matrix, a plurality of pulling circuits and a global current source circuit. Each of the plurality of pixel circuits includes a single photon avalanche diode and four P-type or N-type transistors. Each of the plurality of pulling circuits is arranged corresponding to one pixel circuit column. The global current source circuit is used to form a current mirror with each of the plurality of pulling circuits.

Abstract: An image sensor includes a pixel array including a plurality of shared pixels including a plurality of photoelectric conversion elements arranged in a first direction and a second direction and connected to a same floating diffusion node, and a plurality of column lines connected to the plurality of shared pixels, extending in the second direction, and arranged in parallel. The image sensor further includes an analog-to-digital conversion circuit including a plurality of analog-to-digital converters (ADCs) connected to the plurality of column lines. At least two first shared pixels consecutively arranged in parallel in at least one of the first and second directions and configured to sense an optical signal of a first color among the plurality of shared pixels are connected to different column lines among the plurality of column lines.

Abstract: The present disclosure relates to a comparator, an AD converter, a solid-state imaging device, an electronic apparatus, and a comparator control method that can reduce power consumption while increasing the determination speed of the comparator. The comparator includes a comparison unit, a positive feedback circuit, and a current limiting unit. The comparison unit compares the voltage of an input signal and the voltage of a reference signal, and outputs a comparison result signal. The positive feedback circuit increases the transition speed at the time when the comparison result signal is inverted. The current limiting unit limits the current flowing in the comparison unit after the inversion of the comparison result signal. The present disclosure can be applied to comparators, for example.

Abstract: This application provides an optical signal processing circuit and an electronic device, to improve a signal-to-noise ratio of an output signal of a fingerprint sensor, thereby improving a fingerprint recognition rate. The optical signal processing circuit includes a photosensitive device, an amplifier transistor T1, a switch transistor T2, a switch transistor T3, a readout circuit, a control circuit, and a voltage-adjustable power supply. When the optical signal processing circuit is in a compensation reset phase, the voltage of the gate of T1 exactly reaches a level at which the amplifier transistor T1 is turned on. Therefore, when an input voltage and a voltage increment are applied to the gate of T1, a gate-source voltage Vgs of T1 increases, and T1 amplifies an input voltage signal to generate an output signal.

Abstract: An image sensor may include an array of image pixels. The array of image pixel may be coupled to column readout circuitry. A given image pixel may generate a low light signal and a high light signal for a given exposure. A column line may couple the given image pixel to readout circuitry having amplifier circuitry. The column line may be coupled to an autozeroing transistor for reading out the high light signal and a source follower stage for readout out the low light signal. The amplifier circuitry may receive different common mode voltage depending on whether it is amplifying the low or high light signal. The gain and other operating parameters of the amplifier circuitry may be adjusted based on whether it is amplifying the low or high signal. If desired, separate amplifier circuitry may be implemented for the low and high light signals.

Abstract: Provided is a photoelectric conversion apparatus including a plurality of pixels and a control unit, wherein each of the pixels includes a photoelectric conversion unit and a digital-signal output unit configured to output a digital signal based on the output of the photoelectric conversion unit, and the number of bits of the digital signal may be switched.

Abstract: An image sensor includes a first voltage source that supplies a first voltage and a plurality of pixels supplied with the first voltage. The pixel includes a photoelectric conversion unit that photoelectrically converts incident light, an accumulation unit to which an electric charge resulting from photoelectric conversion by the photoelectric conversion unit is transferred and accumulated, a transfer unit that transfers the electric charge from the photoelectric conversion unit to the accumulation unit; a second voltage source that supplies a second voltage, and a supply unit that supplies the transfer unit with a transfer signal based on either the first voltage supplied by the first voltage source or the second voltage supplied by the second voltage source.

Abstract: An imaging device according to the present disclosure includes a plurality of pixel units each including a first pixel unit and a second pixel unit and a vertical signal line, in which each of the first pixel unit and the second pixel unit includes an amplification transistor, a selection transistor connected between the amplification transistor and the vertical signal line, and a connection unit that selectively connects between a common connection node of the amplification transistor and the selection transistor of the first pixel unit and a common connection node of the amplification transistor and the selection transistor of the second pixel unit.

Abstract: To improve the correction accuracy in a solid-state image sensor that performs dark current correction. A solid-state image sensor includes a bias voltage supply unit and a signal processing unit. The bias voltage supply unit supplies a bias voltage of a predetermined value to a light-shielded pixel impervious to light in a period in which a light-shielded pixel signal is output from the light-shielded pixel, and supplies a bias voltage of a value different from the predetermined value to a photosensitive pixel not impervious to light in a period in which a photosensitive pixel signal is output from the photosensitive pixel. The signal processing unit executes processing of removing dark current noise from the photosensitive pixel signal using the light-shielded pixel signal.

Abstract: A solid-state imaging element and an electronic device is provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.

Abstract: An imaging element according to a first aspect includes: a successive approximation resistor type analog-digital converter that converts an analog signal output from a pixel including a photoelectric conversion part into a digital signal, in which the successive approximation resistor type analog-digital converter has a preamplifier having a band limiting function. An imaging element according to a second aspect includes a DAC in which the successive approximation resistor type analog-digital converter uses a capacitance element to convert a digital value after AD conversion to an analog value, and sets the analog value to a comparison reference for comparison with an analog input voltage.

Abstract: In one example, an apparatus is provided. The apparatus comprises an image sensor configured to generate a first raw output to represent a first intensity of incident light based on a first relationship, and to generate a second raw output to represent a second intensity of incident light based on a second relationship. The apparatus further comprises a post processor configured to: generate a first post-processed output based on the first raw output and based on the first relationship such that the first post-processed output is linearly related to the first intensity based on a third relationship, and to generate a second post-processed output based on the second raw output and based on the second relationship such that the second post-processed output is linearly related to the second intensity based on the third relationship.

Abstract: In an image sensor, some pixels in an array contain a sampling circuit to sample the light intensity and a capacitor to store an analog value representing the intensity at that pixel. Alternatively, a group of pixel circuits will be equipped with such sampling and capacitor circuits. This allows simple redundancy-reducing computations with a relatively simple pixel architecture.

Abstract: Systems and methods for monitor brightness control are disclosed. The method includes connecting with a device via a dock, the device including a sensor configured to detect a lighting condition of an environment surrounding the device. The method further includes linking the dock with a monitor. The method further includes detecting the lighting condition. Additionally, in response to a change in the lighting condition, the method includes matching the lighting condition with a monitor brightness setting in a plurality of brightness look-up-tables and adjusting a brightness level of the monitor based on the monitor brightness setting.

Abstract: A photoelectric conversion device includes pixels including first and second photoelectric converters, a memory unit, and a transfer unit for transferring signals in the memory unit to a processing unit. The pixels output a first signal based on a signal of the first photoelectric converter, and a second signal based on signals of the first and second photoelectric converters. The transfer unit performs on row-by-row a first transfer period of transferring the first signal in the memory unit and a second transfer period of transferring the second signals held in the memory unit. A column a pixel outputting the first signal transferred during the first period of a first row is arranged is different from a column a pixel outputting the first signal transferred during the first period of a second row is arranged.

Abstract: An image sensor includes a pixel and a control circuit to detect the optical signal transmitted by a signal line. The pixel includes a photodetector, an amplifier circuit configured to amplify an optical signal from the photodetector, and a first switch configured to control whether to output the optical signal from the pixel to the signal line. The control circuit includes a first capacitor connected with the signal line and an integrator connected with the signal line via the first capacitor. The control circuit is configured to successively supply a first potential and a second potential different from each other to the signal line in a state where the first switch is non-conductive, and measure an amplification rate determined by the first capacitor and the integrator based on outputs of the integrator when the first potential is supplied and the second potential is supplied.

Abstract: An imaging device includes a plurality of pixels including a first pixel and a second pixel, and a differential amplifier including a first amplification transistor, a second amplification transistor, and a first load transistor. The first load transistor receives a power source voltage. The imaging device includes a first signal line coupled to the first amplification transistor and the first load transistor, a second signal line coupled to the second amplification transistor, and a first reset transistor configured to receive the power source voltage. A gate of the first reset transistor is coupled to the first load transistor. The first pixel includes a first photoelectric conversion element and the first amplification transistor, and the second pixel includes a second photoelectric conversion element and the second amplification transistor.

Abstract: A first input receiving a voltage to be sampled formed by a terminal of a sampling capacitor. An amplifier has a first input connected to another terminal of the sampling capacitor and a second input connected to a reference voltage. The amplifier is supplied by a power supply configured to deliver a reduced current and to supply the amplifier in a first condition during a first period, deliver a rated current and to supply the amplifier in a second condition during a second period, the reduced current being lower than the rated current. During the first period, the first and second inputs of the amplifier are short-circuited.

Abstract: An imaging device includes: a semiconductor substrate; pixels arranged two-dimensionally along row and column directions on the substrate; and one or more interconnection layers located on the semiconductor substrate, including a first signal line extending along the column direction and a second signal line to which a multi-level signal is applied. A first pixel includes: a photoelectric converter; a charge storage region; a first interconnection electrically connected to the charge storage region; and a first transistor that includes a first diffusion layer electrically connected to the first signal line and a second diffusion layer electrically connected to the second signal line and that outputs a signal to the first signal line. The first and second signal lines and the first interconnection are arranged in a first interconnection layer. The second signal line is located between the first interconnection and the first signal line, viewed perpendicularly to the substrate.

Abstract: A pixel sensor, an imaging array that includes such pixel sensors, and a method for operating an imaging array are disclosed. The pixel sensor includes a transfer gate that connects a photodiode to a floating diffusion node in response to a transfer signal, a reset circuit, and a controller. The reset circuit is adapted to apply either a first potential or a second potential to the floating diffusion node, the second potential being less than the first potential. The controller is configured to cause the reset circuit to apply the first potential to the floating diffusion node while the transfer gate is conducting just prior to a start of an accumulation phase, and then apply the second potential to the floating diffusion node after the transfer gate is rendered non-conducting, the second potential is less than the first potential.

Abstract: An imaging device includes pixels arranged to form columns and each including a photoelectric conversion unit that generates charges by photoelectric conversion, column circuits provided to the columns, respectively, and each receiving a signal from a part of the pixels, a first common control line connected to each of the column circuits, and a control unit that controls the column circuits. Each of the column circuits includes an amplifier circuit whose gain is switchable and a first transistor that controls a current flowing in the amplifier circuit, and the control unit controls the column circuit so that the first transistor supplies a current of a first current value when the amplifier circuit is at a first gain and the first transistor supplies a current of a second current value different from the first current value when the amplifier circuit is at a second gain different from the first gain.

Abstract: In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.

Abstract: To reduce power consumption in a solid-state image pickup element that performs pixel addition. A solid-state image pickup element includes a predetermined number of blocks, each of which is provided with a plurality of normal pixels arranged in a predetermined direction, and a light shielding area in which the predetermined number of light shielding pixels are arranged in the predetermined direction, the light shielding pixels being connected to the respective blocks. A scanning circuit that controls each of the plurality of normal pixels in the block so that the block transfers electric charge to the light shielding pixel corresponding to the block. A signal processing unit is provided, for each of the light shielding pixels, with a signal processing circuit that processes a signal generated by the light shielding pixel on the basis of the transferred electric charge.

Abstract: A pixel circuit, a driving method and a display device. The pixel circuit includes a light emitting unit; a drive transistor configured to drive the light emitting unit to emit light to display an image frame; and a control circuit configured to control the drive transistor according to signals on control lines. The method of controlling includes: resetting, in a reset stage of an image frame, a voltage of the first electrode of the drive transistor by applying a reset voltage, and sensing, in a sense stage, a threshold voltage of the drive transistor by applying a reference voltage. The control circuit is further configured to control, in an offset elimination stage at the beginning of the image frame and prior to the reset stage, the drive transistor to be switched off, which was in an ON state at the end of a previous image frame.

Abstract: An imaging sensor includes a pixel, an amplifier, and a successive approximation analog-to-digital (AD) converter. The pixel is configured to output a pixel signal. The amplifier is configured to output an amplification signal obtained by amplifying the pixel signal. The successive approximation AD converter detects whether or not the amplification signal is within a predetermined signal range.

Abstract: In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.

Abstract: This disclosure provides a method, and a liquid crystal display device, where the method includes: determining grayscale values of pixels in a zone image data block under a predetermined rule according to a received image signal; pre-obtaining a zone backlight value corresponding to the zone image data block according to the grayscale values; calculating an adjusted backlight value of a backlight zone corresponding to the zone image data block, based on the zone backlight value, a backlight value gain variable, and an ambient luminance revision variable; outputting the adjusted backlight value to a driver circuit of a backlight source in the backlight zone; and driving the backlight source according to the adjusted backlight value to control brightness of the backlight source in the backlight zone.

Abstract: A radiation detector includes a plurality of semiconductor light receiving elements and a plurality of reflection elements that segment a scintillator array. A plurality of respective segment areas by the reflection elements. A plurality of amplifiers amplify signals obtained from respective semiconductor light receiving elements. The scintillator array includes a plurality of scintillators. The radiation detector provides a first accumulator per segment area, and a first trigger generation circuit per segment area. The first trigger generation circuit generates a first trigger of the multiple signal added by the first accumulator for each of the plurality of respective segment areas. An encoder generates a single first trigger signal based on the first trigger.

Abstract: An image sensor array of shared pixel units fabricated by a CMOS technology, wherein each pixel unit includes a plurality of photodiodes and respective transfer transistors and floating drains whose layout constitutes mirror images. The plurality of photodiodes each share a single reset transistor and source follower amplifier transistor wherein the shared floating diode is spaced at the minimum distance, from a gate electrode of the source follower transistor as is allowed by the CMOS fabrication technology chosen to manufacture the image sensor array.

Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.

Abstract: Provided is a photoelectric conversion apparatus including a plurality of pixels and a control unit, wherein each of the pixels includes a photoelectric conversion unit and a digital-signal output unit configured to output a digital signal based on the output of the photoelectric conversion unit, and the number of bits of the digital signal may be switched.

Abstract: The present disclosure relates to a solid-state imaging device, a signal processing method, and an electronic device, capable of suppressing an input voltage of comparison apparatus at the time of P-phase input. In the present technology, a signal voltage is clipped at a predetermined voltage (for example, comparative voltage), and the clip is released at the time of D-phase count. With this configuration, the comparative voltage and the signal voltage VSL (initial voltage) do not cross (the comparator is not inverted in the D-phase). Thus, the up/down counter 32 detects this and sets the count of the P-phase to be 0 without counting the P-phase. The present disclosure can be applied to, for example, a CMOS solid-state imaging device.

Abstract: An image capturing apparatus includes a first chip and a second chip. The first chip includes a plurality of pixels. The second chip is stacked on the first chip and includes a plurality of signal processing circuits arranged in a two-dimensional form. Each signal processing circuit includes a first selection circuit, a plurality of amplifier circuits, and an analog-to-digital conversion unit. The first selection circuit includes a plurality of input nodes, a plurality of output nodes, and is configured such that a signal output from a pixel and input to one of the plurality of input nodes is selectively output to one of the plurality of output nodes. The plurality of amplifier circuits respectively are connected to the plurality of output nodes of the first selection circuit. The analog-to-digital conversion unit is configured to convert a plurality of output signals output from the plurality of amplifier circuits.

Abstract: Disclosed herein is an image pickup circuit including: amplifying means for amplifying a charge corresponding to an amount of light received by a photodetector, and outputting a pixel signal; ramp signal generating means for generating a ramp signal whose voltage drops with a fixed slope from a predetermined initial voltage; and comparing means for comparing the pixel signal output by the amplifying means with the ramp signal output by the ramp signal generating means. A reference potential of the pixel signal output by the amplifying means and a reference potential of the ramp signal output by the ramp signal generating means are at a same level.

Abstract: The present technique relates to a solid-state imaging device, a solid-state imaging device manufacturing method, and an electronic apparatus that are capable of providing a solid-state imaging device that can prevent generation of RTS noise due to miniaturization of amplifying transistors, and can achieve a smaller size and a higher degree of integration accordingly. A solid-state imaging device (1-1) includes: a photodiode (PD) as a photoelectric conversion unit; a transfer gate (TG) that reads out charges from the photodiode (PD); a floating diffusion (FD) from which the charges of the photodiode (PD) are read by an operation of the transfer gate (TG); and an amplifying transistor (Tr3) connected to the floating diffusion (FD). More particularly, the amplifying transistor (Tr3) is of a fully-depleted type.

Abstract: An image sensor may include image pixels arranged in rows and columns. The image pixels may include respective overflow transistors and overflow capacitors and be configured to generate overflow charge during image acquisition. The overflow charge may be generated in a rolling manner on a row-to-row basis by repeatedly activating the overflow transistors and transfer transistors. Row control circuitry may be configured to provide a final synchronous overflow and transfer transistor activation across all of the pixel rows to provide a uniform overflow charge integration time period across all of the pixel rows. Row control circuitry may include a control signal generation circuit configured to generate control signals having full assertions in a first mode and partial assertions for the final synchronous overflow and transfer transistor activation in a second mode.

Abstract: An optical sensor device comprising a conversion region to convert an electromagnetic signal into photo-generated charge carriers is shown. The optical sensor device comprises a read-out node configured to read-out the photo-generated charge carriers and a control electrode which is separated by an isolating material from the conversion region. Furthermore, the optical sensor device comprises a doping region in the semiconductor substrate between the control electrode and the conversion region, wherein the doping region comprises a higher doping concentration compared to a minimum doping concentration of the conversion region, wherein the doping concentration is at least 1000 times higher than the minimum doping concentration of the conversion region and wherein the doping region extends into the semiconductor substrate. Moreover, a projection of the control electrode towards the conversion region overlaps the doping region or is located in the doping region.

Abstract: A display may have a pixel array such as a liquid crystal pixel array. The pixel array may be illuminated by a backlight unit that includes an array of light-emitting diodes. A backlight brightness selection circuit may select brightness values for the light-emitting diodes. The backlight brightness selection circuit may select the brightness values based on image data, based on brightness values used in previous image frames, based on device information, and/or based on sensor information. The backlight brightness selection circuit may select the backlight brightness levels to mitigate visible artifacts such as flickering and halo. The backlight levels selected by the backlight brightness selection may be modified by a power consumption compensation circuit. The power consumption compensation circuit may estimate the amount of power consumption required to operate the backlight using the target brightness levels and may modify the target brightness levels to meet maximum power consumption requirements.

Abstract: A method and apparatus for frameless random-access image sensing. Instructions identifying a pixel detector in an array of pixel detectors and integration instructions for the pixel detector may be received by an image detector controller. Integration by the pixel detector may be controlled as defined by the integration instructions to generate pixel data by the pixel detector. The pixel data may be read from the pixel detector.