Abstract: There is provided an image pickup apparatus including a pixel including a photoelectric conversion element and an amplification element for amplifying and outputting a signal generated at the photoelectric conversion element, a load transistor for controlling an electric current flowing at the amplification element, and a potential control element for suppressing potential fluctuation in a first main electrode region of the load transistor which is an output side of the amplification element.

Abstract: An object of the present invention is to provide an imaging system capable of improving S/N ratio and increasing dynamic range and a method of driving the imaging system suited to the improvement and increase. An imaging system includes: a solid-state imaging device having a plurality of pixels arranged in a matrix, column amplifiers each corresponding to each of columns of the pixels and an output portion for outputting an image signal based on an amplification by the column amplifier; and a signal processing portion receiving the image signal, wherein the column amplifier amplifies a signal output from the pixel by a gain q larger than 1, and the signal processing portion multiplies, by a factor less than 1, the image signal based on the signal amplified by the gain q.

Abstract: An image sensing apparatus includes a pixel unit which has an array of a plurality of groups each including a plurality of pixels arrayed in a row direction and a column direction, and an adding unit configured to add, of pixel signals output from the plurality of pixels arrayed in the groups, homochromatic pixel signals. The adding unit has, for each group, a common pixel amplifier commonly connected to homochromatic pixels. The adding unit adds the pixel signals of the homochromatic pixels in the gate portion of the common pixel amplifier so that the spatial centers of gravity of the pixels added in the group are arranged at equal pitches in at least one of the row direction and the column direction.

Abstract: An image pickup apparatus includes a plurality of comparators. At least two analog signal outputs from a pixel are input to the plurality of comparators, and the plurality of comparators perform comparison operations in an overlapped period.

Abstract: One or more embodiments relate to an image pickup apparatus including multiple pixels. Each of the multiple pixels includes a photoelectric-conversion unit, and an amplifier which outputs a signal based on charge generated by the photoelectric-conversion unit. Within an electric path between the photoelectric-conversion unit and an input node of the amplifier, there are disposed a first holder, a second holder disposed following the first holder, a first transfer unit which transfers charge to the first holder, a second transfer unit which transfers charge of the first holder to the second holder, and a third transfer unit which transfers charge of the second holder. The first holder includes a first-conductive-type first semiconductor region holding charge. The second holder includes a first-conductive-type second semiconductor region holding charge. Impurity concentration of the first semiconductor region is lower than impurity concentration of the second semiconductor region.

Abstract: An image pickup apparatus includes pixels each including a photoelectric conversion unit, an amplifying element, a first signal holding unit and a second signal holding unit both disposed in an electric path between the photoelectric conversion unit and an input node of the amplifying element, a first charge transfer unit configured to transfer electrons from the photoelectric conversion unit to the first signal holding unit, and a second charge transfer unit configured to transfer electrons from the first signal holding unit to the second signal holding unit. Voltage are set such that a voltage supplied to the first control electrode when the electrons are transferred from the photoelectric conversion unit to the first signal holding unit is lower than a voltage supplied to the second control electrode when the electrons held by the first signal holding unit are transferred to the second signal holding unit.

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device 32 in which micro pads 34, 37 are formed on the wiring layer side and a signal processing chip 33 having micro pads 35, 38 formed on the wiring layer at the positions corresponding to the micro pads 34, 37 of the MOS solid-state image pickup device 32 are connected by micro bumps 36, 39. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Abstract: According to one embodiment, a cell includes 2N pixels configured to accumulate charges generated based on incident light, an amplifier transistor is formed for each the cell and amplifies, for each of the pixels, signals read out from the pixels to a floating diffusion, and charge coupled devices transfer the charges accumulated in the pixels to the floating diffusion.

Abstract: In a driving method of device having plural pixels, each pixel comprises photoelectric converter, floating diffusion, transfer transistor to transfer charge of the photoelectric converter to the floating diffusion, amplifying transistor to amplify signal based on the transferred charge, and reset transistor to reset voltage of the floating diffusion, the method comprises first step of, after putting the transfer transistor into conduction state, resetting the charge of the photoelectric converter by putting the transfer transistor into non-conduction state in non-conduction state of the reset transistor, and second step of, after the first step and after putting the transfer transistor into the conduction state, transferring the charge of the photoelectric converter to the floating diffusion by putting the transfer transistor into the non-conduction state in the non-conduction state of the reset transistor, and the signal based on the charge transferred in the second step is amplified by the amplifying transi

Abstract: A solid-state imaging device includes a pixel unit in which pixels each including a photoelectric conversion element and a signal accumulation circuit are arranged in a matrix shape and a plurality of pixels in a range of two or more rows form the same group, and a control unit that performs control to associate a plurality of photoelectric conversion elements that are targets from which signals are read in the same group with a plurality of signal accumulation circuits in the same group of an array having a number of rows smaller than a number of rows in an array of the plurality of photoelectric conversion elements, transfer signals generated by the plurality of photoelectric conversion elements to the signal accumulation circuits associated with the respective photoelectric conversion elements, and output the signals accumulated in the signal accumulation circuits for each row.

Abstract: An image capturing system includes a signal correction unit which corrects a signal output from a defective pixel in an optical black region based on a signal output from a normal pixel. The optical black region has a plurality of pixel blocks. Each of the plurality of pixel blocks has a plurality of pixels each including one or more elements which have the same functions as in the remaining pixels and which have relative positions different from the remaining pixels. The signal correction unit corrects the signal output from the defective pixel in the optical black region based on a signal output from a normal pixel which is included in another pixel block different from the pixel block of the defective pixel in the optical black region and includes one or more elements having the same functions and same relative positions as in the defective pixel.

Abstract: A solid-state imaging device includes pixels, vertical signal lines, a high-order AD converter configured to convert M bits, a low-order AD converter, and first and second selection circuits. The first selection circuit is configured to output, in a normal mode, voltage of the selected vertical signal line and to output correction voltage in a correction mode. The high-order AD converter calculates 2M residual voltage values each corresponding to a difference between a signal voltage value and each of 2M threshold voltage values; outputs, in the normal mode, a high-order bit digital value corresponding to the maximum one of the 2M threshold voltage values in a range below the signal voltage value, and outputs voltage having a residual voltage value corresponding to the maximum threshold voltage value; and outputs, in the correction mode, voltage having a residual voltage value corresponding to a selected threshold voltage value.

Abstract: A solid-state imaging apparatus has a plurality of pixels and an amplifying unit (300) for amplifying signals of the plurality of pixels. The plurality of pixels have imaging pixels and focus detecting pixels. The amplifying unit amplifies the signals of the imaging pixels at a first gain and amplifies the signals of the focus detecting pixels at a second gain different from the first gain.

Abstract: An imaging apparatus includes a control unit and a detector that includes multiple pixels and that performs an image capturing operation to output image data corresponding to radiation or light that is emitted. The image capturing operation includes a first image capturing operation in a first scanning area corresponding to part of the multiple pixels to output image data in the first scanning area and a second image capturing operation in a second scanning area larger than the first scanning area to output image data in the second scanning area. The control unit causes the detector to perform an accumulation operation in the second image capturing operation in a time determined so that an image artifact caused by the scanning area is lower than a predetermined allowable value on the basis of information about the amount of integration of accumulation times in the first image capturing operation.

Abstract: An image pickup unit includes: an image pickup section including a plurality of pixels, each of the pixels including a photoelectric conversion device; and a driving section that includes an amplifier and drives each of the pixels to perform a read out operation intended to read out electric charge obtained by the photoelectric conversion device from the pixel as a signal with use of the amplifier, a pixel reset operation intended to reset electric charge in the pixel, and an amplifier reset operation intended to reset an operation of the amplifier. The driving section drives each of the pixels to allow one or both of end timing of the pixel reset operation and end timing of the amplifier reset operation not to be included in a predetermined power-source potential unstable period.

Abstract: A CMOS image sensor includes a photodiode, a switch configured to transfer a signal sensed by the photodiode to a sensing node, and a comparator electrically and directly connected to the sensing node and configured to compare the sensed signal of the sensing node and a ramp signal. Reset offset of the comparator is maintained at a constant offset voltage level during an initialization mode.

Abstract: An image pickup unit includes: an image pickup section having a plurality of pixels each including a photoelectric transducer; and a drive section performing reading driving and reset driving of signal charge stored in each of the pixels. The drive section includes a charge amplifier circuit converting the read signal charge into a voltage, the drive section performs the reset driving a plurality of times intermittently during one frame period, and the drive section performs each reset driving within the one frame period, by using feedback or an imaginary short of a charge amplifier in the charge amplifier circuit.

Abstract: An image sensor having a plurality of pixels two-dimensionally arranged in a row direction and a column direction, comprises a plurality of pixel amplifiers which are arranged in the row direction for each column, and one of which is shared by at least two pixels of each column; two output lines arranged for each column, to either of which signals are output from the plurality of pixel amplifiers arranged in the row direction for each column; and an averaging unit which averages signals output from the two output lines arranged for the same column.

Abstract: In a photoelectric conversion device, groups of unit pixels are arranged in a well, where each of the unit pixels includes photoelectric conversion elements, an amplifier transistor, and transfer transistors. The photoelectric conversion device includes a line used to supply a voltage to the well, a well-contact part used to connect the well-voltage-supply line to the well, and transfer-control lines used to control the transfer transistors. The transfer-control lines are symmetrically arranged with respect to the well-voltage-supply line in respective regions of the unit-pixel groups.

Abstract: The present invention provides a solid-state imaging device which is capable of high-speed and high-quality pixel mixture. The solid-state imaging device includes: a plurality of pixels; a row selecting circuit; a plurality of column signal lines each of which is provided to a corresponding one of columns of pixels, is connected to pixels of the corresponding column, and transfers the signals outputted from the connected pixels; a pixel current source which (i) is provided to a corresponding one of the column signal lines, (ii) is connected to the corresponding column signal line, and (iii) supplies to the connected column signal line a current when the signal is outputted from the selected pixel to the connected column signal line; and a control unit which changes the number of rows of pixels being simultaneously selected by the row selecting circuit, and values of the current supplied by the pixel current source.

Abstract: An imaging system may include an image sensor array formed from imaging pixels with feedback loops. Each imaging pixel may include an amplifier transistor that is controlled by a voltage on a floating diffusion node and may include a feedback transistor connected between the floating diffusion node and column readout circuitry. The amplifier transistor, together with a current source in the image sensor array, may form a common-source amplifier that inversely amplifies the voltage on the floating diffusion node and provides control signals to the feedback transistor. The common-source amplifier and the feedback transistor may create a feedback loop during image readout operations and during image reset operations that clamps the voltage on the floating diffusion node.

Abstract: A solid-state imaging apparatus includes: photoelectric conversion sections that generate signal charge corresponding to an amount of received light; and a plurality of pixel transistors that read the signal charge generated in the photoelectric conversion sections, and include amplification transistors each being formed of an amplification gate electrode which is formed on a substrate, a high-concentration impurity region which is formed in a substrate region on a drain side of the amplification gate electrode, and a low-concentration impurity region which is formed to have an impurity concentration lower than that of the high-concentration impurity region and is formed on a substrate region on a source side of the amplification gate electrode.

Abstract: A solid-state imaging apparatus includes a pixel outputting a pixel signal; and an amplifier for amplifying the pixel signal. The amplifier includes an input capacitor connected between an input terminal of the operational amplifier and the pixel, a feedback capacitor connected between the input and output terminals of the amplifier, an initializing switch connected between the input terminal and the output terminal of the amplifier, a first capacitor connected in parallel to the feedback capacitor, a second capacitor connected in parallel to the feedback capacitor, a first switch connected between an one terminal of the feedback capacitor and an one terminal of the first capacitor, and a second switch connected between the one terminal of the first capacitor and an one terminal of the second capacitor. One terminal of the first or second capacitor is connected to the one terminal of the second capacitor through the first and second switches.

Abstract: An image sensing apparatus comprises a pixel array; a readout unit; a first terminal; and a second terminal, wherein the readout unit including a column amplification unit, a holding unit, a first power supply line, and a second power supply line, and wherein the column amplification unit including a transistor having a gate electrode and back-gate electrode, the gate electrode receiving a signal read out from a pixel on each column of the pixel array, and the holding unit including a capacitor having a first electrode and a second electrode, the first electrode receiving a signal amplified by the column amplification unit, and wherein the first power supply line transfers the first power supply voltage to the back-gate electrode of the transistor, and the second power supply line transfers the second power supply voltage to the second electrode of the capacitor.

Abstract: Systems and methods for providing one or more reference currents with respective negative temperature coefficients are provided. A first voltage is divided to provide a divided voltage, which is compared to a reference voltage (e.g., a bandgap reference voltage) to provide a control voltage. The first voltage and the one or more reference currents are based on the control voltage.

Abstract: A solid-state image pickup device including a photoelectric conversion element, a floating diffusion, and an element isolation region that are disposed above a first semiconductor region has a second semiconductor region of a first conductivity type disposed on the first semiconductor region. An interface between the first semiconductor region and a portion of the second semiconductor region corresponding to the photoelectric conversion element is located at a first depth, whereas the interface between the first semiconductor region and a portion of the second semiconductor region disposed under the element isolation region and the floating diffusion is located at a second depth smaller than the first depth.

Abstract: An apparatus includes a plurality of pixels including a photoelectric conversion unit and a pixel amplification unit for amplifying a signal transmitted from the photoelectric conversion unit and outputting an amplified signal, a sequential averaging unit configured to sequentially average signals read a plurality of times via the pixel amplification unit, and a memory configured to store a signal obtained by sequential averaging.

Abstract: A solid-state image pickup apparatus includes a pixel area in which pixels each having at least a photoelectric conversion unit and an amplification transistor for amplifying and outputting a signal of the photoelectric conversion unit are two-dimensionally arranged in horizontal and vertical directions, wherein a power supply wiring, which extends in a vertical direction along pixel boundaries of horizontal and vertical directions while meandering, is arranged on one of two pixel lines adjoining to each other in the horizontal direction in the pixel area, and the power supply wiring is connected to one of a source and a drain of the amplification transistor on each of the two pixel lines. Thus, it is possible to provide a high-sensitivity and high-image-quality amplified solid-state image pickup apparatus in which a difference of sensitivities at one-line intervals is small.

Abstract: Provided is an imaging apparatus including an image sensor. In the image sensor that includes a valid pixel area in which a plurality of valid pixels each having a photoelectric conversion unit is disposed, a first reference pixel area in which a plurality of first reference pixels each having a light-shielded photoelectric conversion unit is disposed, and a second reference pixel area in which a plurality of second reference pixels each having no photoelectric conversion unit is disposed, when outputs of the plurality of valid pixels are added to be read, outputs of the plurality of first reference pixels are added by the addition unit to be read, and outputs of the plurality of second reference pixels are read without being added by the addition unit. Thus, noises can be effectively corrected even in the small number of invalid pixels areas.

Abstract: In a solid-state image sensing device, a method for driving the solid-state image sensing device, and an image sensing system incorporated with the solid-state image sensing device of the invention, pixel signals having two or more different photoelectric conversion characteristics to be outputted from a pixel section are amplified by using an analog gain with respect to each of the photoelectric conversion characteristics for outputting the amplified pixel signals. This enables to reproduce an image having a wide dynamic range while suppressing lowering of the frame rate.

Abstract: A data transfer circuit includes: plural transfer lines transferring data; plural data output units connected to end portions of the respective transfer lines, detecting and outputting data transferred through the transfer lines with drive performance in accordance with a control signal; plural data transmission units arranged in parallel, transferring data to the corresponding transfer lines in response to selection signals; a selection control unit generating selection signals and outputting the selection signals to the corresponding data transmission units; and a control unit generating the control signal for controlling drive performance of the data output units to adjust data transfer delay and outputting the control signal to the respective output units. The transfer lines are arranged in the arrangement direction of the data transmission units and connected to the corresponding data output units. The control unit generates the control signal in accordance with the length of the data transfer distance.

Abstract: A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.

Abstract: An object of the present invention is to provide an imaging system capable of improving S/N ratio and increasing dynamic range and a method of driving the imaging system suited to the improvement and increase. An imaging system includes: a solid-state imaging device having a plurality of pixels arranged in a matrix, column amplifiers each corresponding to each of columns of the pixels and an output portion for outputting an image signal based on an amplification by the column amplifier; and a signal processing portion receiving the image signal, wherein the column amplifier amplifies a signal output from the pixel by a gain q larger than 1, and the signal processing portion multiplies, by a factor less than 1, the image signal based on the signal amplified by the gain q.

Abstract: An image sensor has a per-column ADC arrangement including first and second capacitors allowing a comparator circuit to perform correlated double sampling. The capacitors are continuously connected to, respectively, the analog pixel signal and a ramp signal without use of a hold operation. The comparator circuit comprises a differential input being connected to the junction of the two capacitors and being biased by a reference signal. The reference signal is preferably sampled and held from a reference voltage. The use of a differential input as first stage of the comparator addresses problems arising from ground voltage bounce when a large pixel array images a scene with low contrast. Connectivity of the differential input stage allows the ramp signal to see a constant capacitive load thus reduce image artifacts referred to as smear.

Abstract: In an image pickup device with A/D converters at each column signal line, improvements in the A/D conversion speed and accuracy in image sensors having A/D converters are achieved. In an image pickup device wherein sensing elements are arranged in a matrix and A/D converters are arranged for each column signal line, the A/D converter first retains in its memory unit as an initial value an electric signal corresponding to the signal of the sensing element which is an analog signal, then initiates charge or discharge of the memory unit at a rate corresponding to the size of an input fixed signal, measures the time period from either the charge start time or the discharge start time until the memory unit electric signal becomes equal to the reference signal, and then recognizes the measured time period as a digital value.

Abstract: Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse ?Vn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.

Abstract: Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.

Abstract: In a method for correcting a picked-up image signal of an image pickup apparatus including: a solid-state imaging device having a plurality of pixels which are arranged in a two-dimensional array form in a surface portion of a semiconductor substrate, and an amplifier which is provided at the semiconductor substrate, and which amplifies signals that are detected by the pixels in accordance with an amount of incident light; and an image signal processing section which processes a signal output from the amplifier, each of the pixels senses light emission produced when the amplifier operates, through the semiconductor substrate to obtain a signal amount as a correction amount, and the correction amount is subtracted from a detection signal amount of the pixel which is output from the amplifier, to correct the detection amount.

Abstract: In a three-TR configuration pixel, the solid-state image capturing apparatus according to the present invention is capable of securing an electric potential difference sufficiently between a signal voltage and a reset voltage at the transferring of a signal charge and performing complete transferring of the signal charge from a photoelectric conversion element to an FD section easily and stably. Each pixel section, constituting a pixel array, has a 3TR configuration including reset transistors, transfer transistors and amplifying transistors. In each row of the pixel array, provided are a level shifter for driving reset drain wiring connected to a drain of the reset transistor, with an electric potential higher than a power supply voltage, and another level shifter for driving a reset signal line connected to a gate of the reset transistor, with an electric potential higher than the power supply voltage.

Abstract: Pixels are two-dimensionally arranged into rows and columns in an image sensing region of a solid-state image sensing device, and divided into a plurality of vertical blocks. A vertical signal line is connected to each pixel column. A voltage read out from a pixel is A/D-converted and held in a holding circuit. A vertical block selection circuit outputs a vertical block selection signal in response to a horizontal sync pulse. An intra-block line selection circuit selects one pixel row in one block or simultaneously selects a plurality of pixel rows in one block, in accordance with the selection signal and a signal for setting the number of lines to be selected. A pulse selector circuit supplies a pixel driving pulse signal to a pixel row selected by the intra-block line selection circuit.

Abstract: Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.

Abstract: During the vertical blanking period, first the vertical common signal line switch transistor 213 is turned OFF, then the clamp transistor 218 is turned ON, thereby fixing the sample/hold capacitor 223 to the clamp potential. Also, the column amplifier reset transistor 217 is turned ON, and the column amplifier 216 is reset. Next, the column amplifier reset transistor 217 and the clamp transistor 218 are turned OFF, and the unit column circuit 105 is kept to the clamp state. In this state, the sample/hold transistor 221 is turned OFF, and the sample/hold capacitance 223 is read. The read data is used as the data for correcting the vertical fixed pattern noise.

Abstract: According to one embodiment, a solid state imaging device includes an imaging unit that outputs imaging data by performing an imaging operation, a temperature sensor that outputs a diode voltage according to a diode current, and an output circuit that shares a part of a circuit with the imaging unit and outputs temperature data based on the diode voltage outputted from the temperature sensor in the same semiconductor chip.

Abstract: A pixel structure includes two different photosensitive portions. One portion is shielded from incident light and the signals from both are fed into an op amp so that the differential signal is output as the pixel output, thereby cancelling dark current.

Abstract: A sense amplifier having a negative capacitance circuit receives differential input signals via a pair of data lines, and senses and amplifies a voltage difference between differential output signals corresponding to the differential input signals as loaded by the negative capacitance circuit using a differential-to-single-ended amplifier to generate a corresponding data output signal.

Abstract: A photoelectric conversion device comprises a plurality of pixels, a driving supplemental element, a signal line to which the plurality of pixels and the driving supplemental element are connected, a driving unit which drives the plurality of pixels and the driving supplemental element, and an output circuit which processes a signal output to the signal line from a readout pixel selected by the driving unit and outputs the processed signal, each of the plurality of pixels including a first charge-voltage converter, a first reset unit which resets the first charge-voltage converter, and a first output unit which outputs a signal corresponding to a voltage of the first charge-voltage converter, the driving supplemental element including a second charge-voltage converter, a second reset unit which resets the second charge-voltage converter, and a second output unit which outputs a signal corresponding to a voltage of the second charge-voltage converter.

Abstract: A solid-state imaging device includes plural pixel cells, arranged in a matrix, each of which includes a photodiode that photoelectrically converts incident light. The solid-state imaging devices also includes a transferring transistor that transfers a charge generated by the photodiode, a floating diffusion that accumulates the transferred charge, a reset transistor that resets a potential of said floating diffusion, and an amplifying transistor that converts the charge accumulated in the floating diffusion into a voltage.

Abstract: A solid state imaging device includes shared amplification transistors and reset transistors arranged, for example, in a checkered pattern so that centroid of photo diodes 2 of the same colors are arranged substantially at an identical pitch. As a result, the resolution of the solid state imaging device can be maintained without considering irregularities of the incident light for each unit pixel.

Abstract: An imaging system may include an image sensor array formed from imaging pixels with feedback loops. Each imaging pixel may include an amplifier transistor that is controlled by a voltage on a floating diffusion node and may include a feedback transistor connected between the floating diffusion node and column readout circuitry. The amplifier transistor, together with a current source in the image sensor array, may form a common-source amplifier that inversely amplifies the voltage on the floating diffusion node and provides control signals to the feedback transistor. The common-source amplifier and the feedback transistor may create a feedback loop during image readout operations and during image reset operations that clamps the voltage on the floating diffusion node.

Abstract: An image sensing device includes a pixel array in which a plurality of pixels are arrayed, and a plurality of column amplification units that amplify a plurality of signals that are output in parallel from the pixel array. Each of the column amplification units includes a differential amplifier including an amplification unit and a constant current circuit, with the amplification unit amplifying a signal that is output from the pixels and outputting the signal to an output node, and the constant current circuit being arranged between the amplification unit and a ground terminal and supplying a current to the amplification unit. Each amplification unit also includes a clip unit that clips a voltage of the output node when the differential amplifier amplifies the signal and thereby clipping a voltage of a connection node connecting the amplification unit to the constant current circuit in the differential amplifier.