Abstract: The present technology relates to a sensor and a control method that can flexibly detect an event that is a change in electric signals of pixels. The sensor includes pixels that receive light and that perform photoelectric conversion to generate electric signals, and an event detecting unit that detects an event that is a change in the electric signals of the pixels. The sensor adjusts, for each of the pixels, a gain of the event detecting unit. The present technology can be applied to, for example, a sensor that detects an event that is a change in electric signals of pixels.

Abstract: An image capturing apparatus includes an image sensor, a temperature unevenness detection device configured to detect unevenness in a temperature of the image sensor, a exterior cover temperature detection device configured to detect an exterior cover temperature at a predetermined position on the image capturing apparatus, a cooling device configured to cool the image capturing apparatus; and a control unit configured to perform control to change a cooling capability of the cooling device based on a value detected by the temperature unevenness detection device, and on a value detected by the exterior cover temperature detection device.

Abstract: A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate. The sensor substrate is coupled to the circuit substrate, the first wiring layer and the second wiring layer being positioned between the sensor substrate and the circuit substrate. A first electrode is formed on a surface of the first wiring layer, and a second electrode is formed on a surface of the second wiring layer. The first electrode is in electrical contact with the second electrode.

Abstract: A semiconductor apparatus includes a stack of a first chip having a plurality of pixel circuits arranged in a matrix form and a second chip having a plurality of electric circuit arranged in a matrix form. A wiring path between a semiconductor element configuring the pixel circuit and a semiconductor element configuring the electric circuit or a positional relationship between a semiconductor element configuring the pixel circuit and a semiconductor element configuring the electric circuit is differentiated among the electric circuits.

Abstract: An image sensor includes a pixel having an internal capacitor. Each of a plurality of pixels of the image sensor includes a photodetection circuit and an analog-to-digital converter (ADC). The photodetection circuit generates a detection signal. The ADC converts the detection signal using a ramp signal. The photodetection circuit includes a photodiode, a floating diffusion node and an overflow transistor. The floating diffusion node accumulates photocharges generated by the photodiode and includes a parasitic capacitor. The overflow transistor electrically connects the floating diffusion node to a first internal capacitor of the ADC.

Abstract: An imaging device that includes a semiconductor substrate; a first photoelectric converter that is located in the semiconductor substrate and that generates a first signal charge by photoelectric conversion; a first node to which the first signal charge is input; a capacitor having a first terminal coupled to the first node; a second photoelectric converter that is located in the semiconductor substrate and that generates a second signal charge by photoelectric conversion; a second node to which the second signal charge is input; a transistor having a gate coupled to the second node; and a switch element coupled between the first node and the second node, where a number of saturation charges of a first imaging cell including the first photoelectric converter and the capacitor is greater than a number of saturation charges of a second imaging cell including the second photoelectric converter.

Abstract: The present technology relates to a solid-state imaging element, a signal processing method thereof, and an electronic device capable of suppressing a bus band and power consumption required for reading a pixel signal from the solid-state imaging element. The solid-state imaging element performs calculation of at least one stage of a convolutional layer and a pooling layer in a convolutional neural network on a signal corresponding to a light reception amount of light incident on each pixel of a pixel array unit. The present technology can be applied to, for example, a solid-state imaging element and the like generating a captured image or a depth image.

Abstract: An image sensor comprises a row driver, a first row line which is connected to the row driver, first to fourth pixels connected to the first row line, first to fourth column lines connected to the first to fourth pixels and configured to receive respective first to fourth output signals from the first to fourth pixels, a boosting circuit connected to the first to fourth column lines, a second row line connected to the boosting circuit, first and second boosting drivers connected, respectively, to first and second terminals of the second row line. The boosting circuit may adjust voltage of the first and second output signals based on a first boosting enable signal received from the first boosting driver and may adjust a voltage of the third and fourth output signals based on a second boosting enable signal received from the second boosting driver.

Abstract: An imaging device including an imaging unit in which a plurality of shared sections each including two pixel regions adjacent at least in a first direction is provided and the shared sections provided at closest positions in a second direction are disposed to shift in the first direction by the one pixel region, a photoelectric converter provided for each of the pixel regions, an electric charge holding unit that holds signal charge generated by the photoelectric converter, an electric charge voltage converter to which the signal charge is transferred from the electric charge holding unit, and a pixel transistor that is electrically coupled to the electric charge voltage converter. The second direction intersects the first direction. The pixel transistor is provided for each of the shared sections.

Abstract: The present disclosure relates to an image sensor comprising a plurality of pixel circuits each comprising a photodiode connected between ground and a floating diffusion (FD) node, a reset transistor (MRST) connected between a first voltage supply and the floating diffusion (FD) node, and a source follower transistor (MSF), wherein its drain is connected to a second voltage supply, the gate is connected to a floating diffusion (FD) node and the source is connected to a row select transistor (MSEL). The row select transistor (MSEL) is connected between the source of the source follower transistor (MSF) and a common column output. Each pixel circuit is configured to output an output signal corresponding to a light incident on the photodiode. Each pixel circuit includes at least one additional transistor for configuring each pixel circuit to selectively output a linear integration signal or a logarithmic signal.

Abstract: An image sensor includes a pixel array including a plurality of pixels; and processing circuitry, wherein each of the plurality of pixels includes: a photodiode; a floating diffusion node configured to integrate photocharge generated by the photodiode; a first capacitor configured to store charge corresponding to a voltage of the floating diffusion node which is reset; a first sampling transistor one terminal of which is connected to the second node, and another terminal of which is connected to the first capacitor, being configured to sample charge to the first capacitor; a second capacitor configured to store charge corresponding to the voltage of the floating diffusion node at which the photocharge has been integrated; and a second sampling transistor, one terminal of which is connected to the second node, and another terminal of which is connected to the second capacitor, being configured to sample charge to the second capacitor.

Abstract: The reading accuracy of an imaging device is increased. Clear image capturing is performed even in the case where the luminance is high. A reading circuit of the imaging device includes an amplifier portion and a conversion portion. The amplifier portion amplifies a potential difference between a first signal and a second signal that are sequentially input and outputs the amplified difference to the conversion portion. The conversion portion converts the output potential of the amplifier portion into a digital value. The amplifier portion is reset on the basis of a first reference potential and the first signal and amplifies the potential difference on the basis of a second reference potential that is different from the first reference potential and the second signal.

Abstract: Disclosed is an image sensing device including a current supply circuit coupled between a supply terminal of a first voltage and a pair of output terminals, an input circuit coupled between the pair of output terminals and a common node, and suitable for receiving a pixel signal and a ramp signal, and a mirroring circuit coupled between the common node and a supply terminal of a second voltage, and suitable for compensating for an operating current, which flows between the common node and the supply terminal of the second voltage, based on a reference current when generating the operating current by mirroring the reference current.

Abstract: The photoelectric conversion device includes a pixel including a photoelectric conversion element and outputting a signal corresponding to an amount of charge generated in the photoelectric conversion element, an output line from which a signal of the pixel is output, a clip circuit constituting a source follower circuit and including a transistor having a source connected to the output line and an interconnection connected to a gate of the transistor, and a voltage supply circuit configured to supply a first voltage and a second voltage to the interconnection. A driving power when the interconnection is controlled to the first voltage by the voltage supply circuit and a driving power when the interconnection is controlled to the second voltage by the voltage supply circuit is different.

Abstract: An image sensor is disclosed. The image sensor includes a plurality of pixels arranged in a plurality of rows and a plurality of columns, each of the pixels including: a photodiode; a floating diffusion node configured to accumulate photocharges generated from the photodiode; a first capacitor configured to store charges according to a voltage of the floating diffusion node which is reset; a second capacitor configured to store charges according to a voltage of the floating diffusion node in which the photocharges are accumulated; a first sampling transistor connected to a first output node and configured to sample charges to the first capacitor; a second sampling transistor connected to the first output node and configured to sample charges to the second capacitor; and at least one precharge select transistor connected to the first output node and configured to reset the first output node.

Abstract: An image sensor includes: a pixel of a first tab; a pixel of a second tab; an operation amplifier suitable for comparing, in a comparison operation, a pixel signal of the first tab and a pixel signal of the second tab with each other to produce a comparison result, receiving, in an auto-zeroing operation, a ramp voltage and a selected pixel signal which is selected based on the comparison result between the pixel signal of the first tab and the pixel signal of the second tab, and receiving, in an analog-to-digital conversion operation, the ramp voltage and an unselected pixel signal which is not selected from the pixel signal of the first tab and the second pixel signal of the second tab; and a counter circuit suitable for generating a digital code based on an output of the operation amplifier.

Abstract: An image sensor comprises a row driver, a first row line which is connected to the row driver, first to fourth pixels connected to the first row line, first to fourth column lines connected to the first to fourth pixels and configured to receive respective first to fourth output signals from the first to fourth pixels, a boosting circuit connected to the first to fourth column lines, a second row line connected to the boosting circuit, first and second boosting drivers connected, respectively, to first and second terminals of the second row line. The boosting circuit may adjust voltage of the first and second output signals based on a first boosting enable signal received from the first boosting driver and may adjust a voltage of the third and fourth output signals based on a second boosting enable signal received from the second boosting driver.

Abstract: An imaging apparatus includes an imaging element, and a processing portion that generates single image data by combining a plurality of pieces of image data output from the imaging element and outputs the generated single image data, in which the plurality of pieces of image data are image data generated by performing imaging accompanying A/D conversion of different reference levels, and the number of bits, in units of pixels, of the single image data output from the processing portion is greater than the number of bits of each of the plurality of pieces of image data in units of pixels.

Abstract: An image sensor may include an array of image pixels arranged in rows and columns. Each column of pixels may be coupled to current source transistors and a threshold voltage mitigation circuit. The threshold voltage mitigation circuit may include a long p-channel device for producing a reference current for the current source transistors. The mitigation circuit also includes an autozero transistor and a sampling transistor for passing a global control voltage to the current source transistors. The global control voltage may be generated using a control voltage generator that includes current mirroring circuits and a replica of the current source transistors and the threshold voltage mitigation circuit.

Abstract: An amplifier includes a first capacitor connected between an input node and a floating node, a second capacitor connected between the floating node and an output node, an amplifying element connected between a power supply voltage and the output node and operating in response to a voltage level of the floating node, a current bias source connected between the output node and a ground voltage, a first reset switch connected between the floating node and an intermediate node and operating in response to a reset bias, a second reset switch connected between the intermediate node and the output node and operating in response to the reset bias, and a reset bias generator circuit that outputs the reset bias in response to a reset signal. The reset bias is one of a reset voltage of the intermediate node, the power supply voltage, and the ground voltage.

Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

Abstract: A pixel circuit includes a photoelectric conversion device; an amplifier including a first amplifier transistor and a second amplifier transistor connected in series between a first voltage and a second voltage, wherein a gate terminal of the first amplifier transistor is connected to the photoelectric conversion device; a feedback capacitor connected between a first current terminal of the first amplifier transistor and the photoelectric conversion device; a first reset switch connected between the gate terminal of the first amplifier transistor and an anode voltage; and a second reset switch connected between a first current terminal of the second amplifier transistor and a gate terminal of the second amplifier transistor.

Abstract: A semiconductor apparatus includes a stack of a first chip having a plurality of pixel circuits arranged in a matrix form and a second chip having a plurality of electric circuit arranged in a matrix form. A wiring path between a semiconductor element configuring the pixel circuit and a semiconductor element configuring the electric circuit or a positional relationship between a semiconductor element configuring the pixel circuit and a semiconductor element configuring the electric circuit is differentiated among the electric circuits.

Abstract: A time-of-flight ranging device suitable for indirect time-of-flight ranging is provided. The time-of-flight ranging device includes a light emitting module, a first sensing pixel, a second sensing pixel, a differential readout circuit, and a processing circuit. The light emitting module emits a light pulse to a sensing target, so that the sensing target reflects a reflected light pulse. The first sensing pixel generates a first sensing signal and a second sensing signal. The second sensing pixel generates a third sensing signal and a fourth sensing signal. The differential readout circuit generates first digital data according to the first sensing signal and the third sensing signal and generates second digital data according to the second sensing signal and the fourth sensing signal. The processing circuit calculates a distance between the time-of-flight ranging device and the sensing target according to the first digital data and the second digital data.

Abstract: In described examples, a circuit includes an integrator. The integrator receives an input signal. A first sampling network is coupled to the integrator and generates a signal voltage. A second sampling network is coupled to the integrator and generates a pixel sampled noise voltage. The pixel sampled noise voltage generated in a previous cycle is subtracted from the signal voltage generated in a current cycle to generate a true signal voltage.

Abstract: An image pickup device according to an embodiment includes pixels each configured to output an analog signal based on electric charges produced in a photoelectric conversion unit and a control unit configured to control a gain applied to the analog signal to be at least a first gain and a second gain greater than the first gain in accordance with a signal value of the analog signal. Each of the pixels outputs, as the analog signal, a first signal and a second signal based on electric charges produced in the photoelectric conversion unit in a first exposure period and a second exposure period shorter than the first exposure period. The control unit controls the gain applied to the analog signal by selecting one from the first gain and the second gain in accordance with the signal value, for at least one of the first signal and the second signal.

Abstract: An image sensor including: a pixel circuit comprising a first transistor having one of its main conducting nodes connected to an output line, the other of its main conducting nodes coupled to a supply voltage rail via a read transistor, and its control node coupled to a sense node of the pixel circuit; a current source coupled to the output line; and a control circuit configured to read a pixel voltage from the pixel circuit by: activating the current source while the read transistor is non-conducting; and deactivating the current source and activating the read transistor of the pixel circuit in order to impose a boosted voltage at the sense node.

Abstract: According to one disclosure, a first semiconductor chip in which a plurality of pixels are formed and a second semiconductor chip stacked on the first semiconductor chip and including analog-to-digital conversion units are provided. A comparator includes a differential amplifier circuit that outputs a first signal, a source ground circuit that includes an input transistor to which the first signal is input and a load transistor cascade-connected to the input transistor and outputs a second signal from a connection node of the input transistor and the load transistor, and a current compensation circuit that includes a current control transistor to which the second signal is input and a current source transistor cascade-connected to the current control transistor and in which the current control transistor causes a second current to flow that changes complementarily with respect to a change of a first current flowing in the source ground circuit.

Abstract: It is intended to improve reading speed of pixel signals in a solid-state imaging element provided with an ADC. A plurality of pixels are arrayed in a pixel block. A drive circuit drives the pixel block to output a plurality of pixel signals at the same time. A comparator successively selects the plurality of pixel signals and compares the selected pixel signals and a predetermined reference signal. A control section generates a control signal for updating the predetermined reference signal on the basis of comparison results of the comparator. A reference signal update section updates the predetermined reference signal according to the control signal.

Abstract: A digital X-ray detector comprises a pixel array including a plurality of pixel regions; and a data line; and a read-out driver connected to the data line, wherein each pixel region includes a photo-sensing element and a pixel switch disposed between the photo-sensing element and the data line, wherein the read-out driver includes: an amplification unit connected to each data line; a first association signal detector connected to an output of the amplification unit and detecting a first association signal corresponding to an offset of the amplification unit; a second association signal detector connected to the output of the amplification unit and detecting a second association signal including an output signal of the photo-sensing element; and a third association signal detector connected to the output of the amplification unit and detecting a third association signal corresponding to an offset of the pixel region.

Abstract: Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: The present invention relates to a pixel sensor cell (1) for a CMOS sensor device comprising: —a photodiode (11) for generating photoelectrons; —a first transfer transistor (12) coupling the photodiode (11) with an intermediate node (IN) and configured to be controlled by a first control signal (TX1); —a gain reducing capacitance (CHD) applied on the intermediate node (IN); —a second transfer transistor (14) coupling the intermediate node (IN) with a sense node (SN) and configured to be controlled by a second control signal (TX2); —an output buffer (15) coupled with the sense node (SN) and configured to amplify a potential on the sense node (SN).

Abstract: The present invention discloses a semiconductor structure of an image sensor, an associated chip and an electronic apparatus. The semiconductor structure includes a semiconductor substrate, and a plurality of pixel groups disposed on the bottom of the semiconductor substrate. Each of the pixel groups includes: a first pixel and a second pixel located in the same row and being adjacent to each other, and a third pixel and a fourth pixel located in another row and being adjacent to each other, wherein the first pixel and the third pixel are disposed diagonally. Each of the pixels includes four sub-pixels, and the four sub-pixels of each pixel share a floating diffusion region and the floating diffusion region is surrounded by photodetectors of the four sub-pixels.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: An image sensing device includes an image sensing circuit, a voltage supply grid, bitlines, and a control circuit. The image sensing circuit includes pixels arranged in rows and columns. Each one of the bitlines is coupled to a corresponding one of the columns. The voltage supply grid is coupled to the pixels. The control circuit is coupled to output at least a row select signal and a transfer signal to the rows. Each one of the rows is selectively coupled to the bitlines to selectively output image data signals in response to the row select signal and the transfer signal. Each one of the rows is further selectively coupled to the bitlines to selectively clamp the bitlines in response to the row select signal and the transfer signal. Each one of the rows is selectively decoupled from the bitlines in response to the row select signal.

Abstract: Pixels output a first signal based on signal charge of a part of photoelectric conversion units of multiple photoelectric conversion units, and a second signal based on signal charge of multiple photoelectric conversion units. An imaging apparatus outputs signals based on the first signals and signals based on the second signals by reducing the number of signals based on the first signals as compared to the number of signals based on the second signals.

Abstract: An image sensor includes a pixel array, an analog-to-digital conversion block, and an output block. The pixel array includes a plurality of unit pixels and generates a plurality of analog pixel signals in response to incident light. The analog-to-digital conversion block includes a plurality of analog-to-digital converters that are connected to a plurality of columns of the pixel array and convert the plurality of analog pixel signals into a plurality of digital signals. The output block includes a plurality of output circuits that are connected to the plurality of analog-to-digital converters and control output timings of the plurality of digital signals. Each of the plurality of output circuits is connected to two or more output lines to simultaneously output two or more bits of a digital signal among the plurality of digital signals.

Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

Abstract: An image sensor may optimize control of each pixel and/or each photodiode therein according to various pixel structures therein. An electronic apparatus may include the image sensor. The image sensor may include a plurality of pixels, each including a photodiode and a transfer transistor configured to transfer charges accumulated in the photodiode to a floating diffusion floating diffusion region, and transfer transistor lines respectively connected to gate electrodes of the transfer transistors of the pixels. The transfer transistor lines may receive voltages having different magnitudes.

Abstract: An image sensor includes: a first pixel having a first photoelectric conversion unit that photoelectrically converts light to generate a charge, a first accumulation unit that accumulates the charge generated by the first photoelectric conversion unit, and a first output unit that is connected to the first accumulation unit; a second pixel having a second photoelectric conversion unit that photoelectrically converts light to generate a charge, a second accumulation unit that accumulates the charge generated by the second photoelectric conversion unit, and a second output unit that is connected to and disconnected from the second accumulation unit via a second connection unit; and an adjustment unit that adjusts capacitances of the first accumulation unit and the second accumulation unit if a signal based on the charges generated by the first photoelectric conversion unit and the second photoelectric conversion unit is output from the first output unit.

Abstract: A driving apparatus comprising a driving circuit is provided. The driving circuit includes an output terminal to which the load element is connected, a current output circuit configured to supply a current to the load element, a voltage supply circuit configured to apply a voltage to the load element, a first signal line configured to control a timing at which the current output circuit starts supplying a current to the load element and a second signal line configured to control a timing at which the voltage supply circuit is turned off. The voltage supply circuit starts applying a voltage before the current output circuit supplies a current to the load element, and a timing at which the current output circuit starts supplying a current differs from a timing at which the voltage supply circuit turns off application of a voltage.

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.

Abstract: An image sensor may include an array of image pixels. The image pixel pixels may be arranged in columns and rows. Each column of image pixels may be coupled to column readout circuitry via respective column lines. The column readout circuitry may include amplifier circuitry, a first source follower stage, and a second source follower stage. The first and second source follower stages may be interposed between the amplifier circuitry and a sampling capacitor. A switch may be interposed between the first and second source follower stages. The second source follower transistor may be configured to provide an intermediate sampling voltage to the sampling capacitor. The first source follower transistor may be configured to provide a final sampling voltage to the sampling capacitor. In such a manner, kickback from sampling signals using readout circuitry may be reduced.

Abstract: A method comprising determining a resistivity of a formation, based on a detection of angular electromagnetic signals by a receiver antenna on a first sub of a multi-sub resistivity tool during rotational operation in a wellbore within the formation, the angular electromagnetic signals emitted into the formation, prior to the detection, by a transmitter antenna on a second sub of the multi-sub resistivity tool, wherein the first sub and the second sub are separated apart such that the angular electromagnetic signals are to be transmitted deep into the formation, wherein determining the resistivity comprises curve-fitting and reproducing angular electromagnetic signals by the receiver antenna, and decoupling component signals based on fitting coefficients derived from the angular electromagnetic signals.

Abstract: A solid-state image sensor includes: a plurality of pixels, each including a photoelectric conversion unit and a charge accumulating unit that accumulates an electric charge from the photoelectric conversion unit; and a connection unit that includes a plurality of linking units each of which electrically connects the charge accumulating units of two adjacent pixels among the plurality of pixels.

Abstract: A display device may include a plurality of pixel electrodes arranged in a matrix along a first direction and a second direction perpendicular to each other. A plurality of light-emitting layers overlap with the respective plurality of pixel electrodes. A plurality of carrier generation layers are separated from one another. Each of the plurality of carrier generation layers continuously overlap with two of the plurality of light-emitting layers. The two are next to each other in a direction oblique to both the first direction and the second direction. A common electrode is opposed to the plurality of pixel electrodes.

Abstract: A data transmitter includes a keyboard with keys, a digital micromirror device (DMD) having an array of micromirrors, and a light source directed towards the array of micromirrors. The keys are connected to the DMD such that each key corresponds to a separate micromirror of the array of micromirrors in order to generate a unique light pattern associated with each depressed key. An optical transmission channel is configured to receive the unique light pattern and transfer the unique light pattern to a light sensor of a computer.

Abstract: Magnetic sensing technology can be used to detect changes, or disturbances (e.g., changes in magnetic field strength), in magnetic fields and can be used to measure the precise location/positioning of an electronic device in proximity to a magnetic source. In order to avoid interference by earth's static magnetic field, a modulated magnetic field can be used for magnetic based proximity sensing. Received modulated magnetic field signals can be demodulated to determine proximity of the sensor to the source of the modulated magnetic field. Devices such as gloves or devices with fingertip nodes based on receiving modulated magnetic fields can be used to detect user hand position.