Abstract: According to one disclosure, a first semiconductor chip in which a plurality of pixels are formed and a second semiconductor chip stacked on the first semiconductor chip and including analog-to-digital conversion units are provided. A comparator includes a differential amplifier circuit that outputs a first signal, a source ground circuit that includes an input transistor to which the first signal is input and a load transistor cascade-connected to the input transistor and outputs a second signal from a connection node of the input transistor and the load transistor, and a current compensation circuit that includes a current control transistor to which the second signal is input and a current source transistor cascade-connected to the current control transistor and in which the current control transistor causes a second current to flow that changes complementarily with respect to a change of a first current flowing in the source ground circuit.

Abstract: It is intended to improve reading speed of pixel signals in a solid-state imaging element provided with an ADC. A plurality of pixels are arrayed in a pixel block. A drive circuit drives the pixel block to output a plurality of pixel signals at the same time. A comparator successively selects the plurality of pixel signals and compares the selected pixel signals and a predetermined reference signal. A control section generates a control signal for updating the predetermined reference signal on the basis of comparison results of the comparator. A reference signal update section updates the predetermined reference signal according to the control signal.

Abstract: A digital X-ray detector comprises a pixel array including a plurality of pixel regions; and a data line; and a read-out driver connected to the data line, wherein each pixel region includes a photo-sensing element and a pixel switch disposed between the photo-sensing element and the data line, wherein the read-out driver includes: an amplification unit connected to each data line; a first association signal detector connected to an output of the amplification unit and detecting a first association signal corresponding to an offset of the amplification unit; a second association signal detector connected to the output of the amplification unit and detecting a second association signal including an output signal of the photo-sensing element; and a third association signal detector connected to the output of the amplification unit and detecting a third association signal corresponding to an offset of the pixel region.

Abstract: Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: The present invention relates to a pixel sensor cell (1) for a CMOS sensor device comprising: —a photodiode (11) for generating photoelectrons; —a first transfer transistor (12) coupling the photodiode (11) with an intermediate node (IN) and configured to be controlled by a first control signal (TX1); —a gain reducing capacitance (CHD) applied on the intermediate node (IN); —a second transfer transistor (14) coupling the intermediate node (IN) with a sense node (SN) and configured to be controlled by a second control signal (TX2); —an output buffer (15) coupled with the sense node (SN) and configured to amplify a potential on the sense node (SN).

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: The present invention discloses a semiconductor structure of an image sensor, an associated chip and an electronic apparatus. The semiconductor structure includes a semiconductor substrate, and a plurality of pixel groups disposed on the bottom of the semiconductor substrate. Each of the pixel groups includes: a first pixel and a second pixel located in the same row and being adjacent to each other, and a third pixel and a fourth pixel located in another row and being adjacent to each other, wherein the first pixel and the third pixel are disposed diagonally. Each of the pixels includes four sub-pixels, and the four sub-pixels of each pixel share a floating diffusion region and the floating diffusion region is surrounded by photodetectors of the four sub-pixels.

Abstract: An image sensing device includes an image sensing circuit, a voltage supply grid, bitlines, and a control circuit. The image sensing circuit includes pixels arranged in rows and columns. Each one of the bitlines is coupled to a corresponding one of the columns. The voltage supply grid is coupled to the pixels. The control circuit is coupled to output at least a row select signal and a transfer signal to the rows. Each one of the rows is selectively coupled to the bitlines to selectively output image data signals in response to the row select signal and the transfer signal. Each one of the rows is further selectively coupled to the bitlines to selectively clamp the bitlines in response to the row select signal and the transfer signal. Each one of the rows is selectively decoupled from the bitlines in response to the row select signal.

Abstract: Pixels output a first signal based on signal charge of a part of photoelectric conversion units of multiple photoelectric conversion units, and a second signal based on signal charge of multiple photoelectric conversion units. An imaging apparatus outputs signals based on the first signals and signals based on the second signals by reducing the number of signals based on the first signals as compared to the number of signals based on the second signals.

Abstract: An image sensor includes a pixel array, an analog-to-digital conversion block, and an output block. The pixel array includes a plurality of unit pixels and generates a plurality of analog pixel signals in response to incident light. The analog-to-digital conversion block includes a plurality of analog-to-digital converters that are connected to a plurality of columns of the pixel array and convert the plurality of analog pixel signals into a plurality of digital signals. The output block includes a plurality of output circuits that are connected to the plurality of analog-to-digital converters and control output timings of the plurality of digital signals. Each of the plurality of output circuits is connected to two or more output lines to simultaneously output two or more bits of a digital signal among the plurality of digital signals.

Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

Abstract: An image sensor may optimize control of each pixel and/or each photodiode therein according to various pixel structures therein. An electronic apparatus may include the image sensor. The image sensor may include a plurality of pixels, each including a photodiode and a transfer transistor configured to transfer charges accumulated in the photodiode to a floating diffusion floating diffusion region, and transfer transistor lines respectively connected to gate electrodes of the transfer transistors of the pixels. The transfer transistor lines may receive voltages having different magnitudes.

Abstract: An image sensor includes: a first pixel having a first photoelectric conversion unit that photoelectrically converts light to generate a charge, a first accumulation unit that accumulates the charge generated by the first photoelectric conversion unit, and a first output unit that is connected to the first accumulation unit; a second pixel having a second photoelectric conversion unit that photoelectrically converts light to generate a charge, a second accumulation unit that accumulates the charge generated by the second photoelectric conversion unit, and a second output unit that is connected to and disconnected from the second accumulation unit via a second connection unit; and an adjustment unit that adjusts capacitances of the first accumulation unit and the second accumulation unit if a signal based on the charges generated by the first photoelectric conversion unit and the second photoelectric conversion unit is output from the first output unit.

Abstract: A driving apparatus comprising a driving circuit is provided. The driving circuit includes an output terminal to which the load element is connected, a current output circuit configured to supply a current to the load element, a voltage supply circuit configured to apply a voltage to the load element, a first signal line configured to control a timing at which the current output circuit starts supplying a current to the load element and a second signal line configured to control a timing at which the voltage supply circuit is turned off. The voltage supply circuit starts applying a voltage before the current output circuit supplies a current to the load element, and a timing at which the current output circuit starts supplying a current differs from a timing at which the voltage supply circuit turns off application of a voltage.

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.

Abstract: An image sensor may include an array of image pixels. The image pixel pixels may be arranged in columns and rows. Each column of image pixels may be coupled to column readout circuitry via respective column lines. The column readout circuitry may include amplifier circuitry, a first source follower stage, and a second source follower stage. The first and second source follower stages may be interposed between the amplifier circuitry and a sampling capacitor. A switch may be interposed between the first and second source follower stages. The second source follower transistor may be configured to provide an intermediate sampling voltage to the sampling capacitor. The first source follower transistor may be configured to provide a final sampling voltage to the sampling capacitor. In such a manner, kickback from sampling signals using readout circuitry may be reduced.

Abstract: A method comprising determining a resistivity of a formation, based on a detection of angular electromagnetic signals by a receiver antenna on a first sub of a multi-sub resistivity tool during rotational operation in a wellbore within the formation, the angular electromagnetic signals emitted into the formation, prior to the detection, by a transmitter antenna on a second sub of the multi-sub resistivity tool, wherein the first sub and the second sub are separated apart such that the angular electromagnetic signals are to be transmitted deep into the formation, wherein determining the resistivity comprises curve-fitting and reproducing angular electromagnetic signals by the receiver antenna, and decoupling component signals based on fitting coefficients derived from the angular electromagnetic signals.

Abstract: A solid-state image sensor includes: a plurality of pixels, each including a photoelectric conversion unit and a charge accumulating unit that accumulates an electric charge from the photoelectric conversion unit; and a connection unit that includes a plurality of linking units each of which electrically connects the charge accumulating units of two adjacent pixels among the plurality of pixels.

Abstract: A display device may include a plurality of pixel electrodes arranged in a matrix along a first direction and a second direction perpendicular to each other. A plurality of light-emitting layers overlap with the respective plurality of pixel electrodes. A plurality of carrier generation layers are separated from one another. Each of the plurality of carrier generation layers continuously overlap with two of the plurality of light-emitting layers. The two are next to each other in a direction oblique to both the first direction and the second direction. A common electrode is opposed to the plurality of pixel electrodes.

Abstract: A data transmitter includes a keyboard with keys, a digital micromirror device (DMD) having an array of micromirrors, and a light source directed towards the array of micromirrors. The keys are connected to the DMD such that each key corresponds to a separate micromirror of the array of micromirrors in order to generate a unique light pattern associated with each depressed key. An optical transmission channel is configured to receive the unique light pattern and transfer the unique light pattern to a light sensor of a computer.

Abstract: Magnetic sensing technology can be used to detect changes, or disturbances (e.g., changes in magnetic field strength), in magnetic fields and can be used to measure the precise location/positioning of an electronic device in proximity to a magnetic source. In order to avoid interference by earth's static magnetic field, a modulated magnetic field can be used for magnetic based proximity sensing. Received modulated magnetic field signals can be demodulated to determine proximity of the sensor to the source of the modulated magnetic field. Devices such as gloves or devices with fingertip nodes based on receiving modulated magnetic fields can be used to detect user hand position.

Abstract: An image pickup device according to an embodiment includes pixels each configured to output an analog signal based on electric charges produced in a photoelectric conversion unit and a control unit configured to control a gain applied to the analog signal to be at least a first gain and a second gain greater than the first gain in accordance with a signal value of the analog signal. Each of the pixels outputs, as the analog signal, a first signal and a second signal based on electric charges produced in the photoelectric conversion unit in a first exposure period and a second exposure period shorter than the first exposure period. The control unit controls the gain applied to the analog signal by selecting one from the first gain and the second gain in accordance with the signal value, for at least one of the first signal and the second signal.

Abstract: A semiconductor apparatus includes a stack of a first chip having a plurality of pixel circuits arranged in a matrix form and a second chip having a plurality of electric circuit arranged in a matrix form. A wiring path between a semiconductor element configuring the pixel circuit and a semiconductor element configuring the electric circuit or a positional relationship between a semiconductor element configuring the pixel circuit and a semiconductor element configuring the electric circuit is differentiated among the electric circuits.

Abstract: A noise removing circuit includes a capacitor, a buffer circuit, and a switch. The capacitor includes a first terminal and a second terminal. The buffer circuit includes a third terminal and a fourth terminal. The switch sets the capacitor and the buffer circuit to be in one of a first state and a second state. In the first state, the first terminal is connected to the fourth terminal, a reference voltage is input to the second terminal, and the third terminal is connected to the signal source. In the second state, the first terminal is connected to the signal source, and the second terminal is connected to the third terminal.

Abstract: A solid-state imaging device is provided that includes a pixel array with unit pixels. Each unit pixel includes, among other things, first and second photoelectric conversion portions; an electric charge accumulating portion that accumulates charges produced by the second photoelectric conversion portion, a counter electrode of the electric charge accumulating portion being connected to a variable voltage power source; and a charge-to-voltage conversion portion. For at least a part of a time period for which charges produced by the second photoelectric conversion portion are accumulated in the electric charge accumulating portion, a drive portion that controls an operation of the unit pixel causes a voltage of the variable voltage power source to be lower than that when a signal based on the charges accumulated in the electric charge accumulating portion is read out.

Abstract: Embodiments of the present disclosure provide a display panel, a display apparatus and a method for identifying fingerprints. The display panel comprises a first number of pixel units, arranged in a first direction and a second direction perpendicular to the first direction, and each pixel unit comprises a display element and a sensor configured to sense and identify a fingerprint. The display panel may further comprise a receiving unit, configured to receive a fingerprint signal sensed by the sensor; a controlling unit, configured to control the receiving unit to receive the fingerprint signal sensed by a second number of sensors among a first number of sensors, in response to an instruction for fingerprint identification being received, wherein any two of the second number of sensors are not adjacent to each other in the first direction and the second direction.

Abstract: In an imaging device, a differential stage includes an input transistor having an input node connected to a floating diffusion portion, a first control line and a second control line are located in a plurality of sets, the first control line is connected to connection portions of some sets of the plurality of sets, and the second control line is connected to connection portions of the other sets of the plurality of sets.

Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

Abstract: To prolong an exposure time in an image pickup apparatus that combines a plurality of images. A gain processing unit increases or decreases a plurality of image signals using gains different from each other. An analog to digital conversion unit generates a plurality of image data by performing analog to digital conversion on the increased or decreased plurality of image signals. A calculation unit adds data obtained by multiplying short-time exposure data being any of the plurality of image data, by a ratio between the gains, and data among the plurality of image data that does not correspond to the short-time exposure data, and outputs the added data as long-time exposure data. A combining unit combines the short-time exposure data and the long-time exposure data at a predetermined combining ratio.

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

Abstract: Provided is an imaging device including a pixel array including a plurality of pixels arranged to form a plurality of rows and a plurality of columns, each of the plurality of pixels generates signals in accordance with an incident light; a first output line and a second output line that are arranged corresponding to each of the plurality of columns of the pixel array and transmit signals output from the pixels arranged on a corresponding column; a scanning unit that drives the pixel array so as to output signals from at least two of the pixels arranged on different rows of a single column respectively to the first output line and the second output line; and an output line control unit that provide potentials that are different from each other to the first output line and the second output line, respectively, in a test mode.

Abstract: Disclosed are a method and a device for detecting a short circuit between adjacent micro-bumps. The method includes setting outputs of a pull-up driver and a pull-down driver of a data output circuit connected with a micro-bump to be suitable for a test type and determining whether a short circuit is generated.

Abstract: The present technology relates to an image sensor capable of achieving both higher S/N and higher frame rate, an electronic device, a control device, a control method, and a program. An AD converter has a comparator in which differential pairs are provided at an input stage. The differential pairs have a plurality of transistors as first transistors and second transistors paired to configure the differential pairs. The AD converter compares a level-changing reference signal with an electric signal output by a shooting unit for performing photoelectric conversion and outputting the electric signal, thereby performing AD conversion on the electric signal. The comparator is controlled such that a transistor to be operated is selected as active transistor from among the transistors depending on the amount of light incident in the shooting unit and the active transistor operates. The present technology is applicable to an image sensor for shooting an image, and the like, for example.

Abstract: A pixel cell and readout circuit includes an anti-eclipse voltage clamp circuit at both the top and bottom of each column line of an array of the pixel cells. The anti-eclipse voltage clamp circuits form a row with each column in the array coupled to an anti-eclipse voltage clamp circuit. The combination of two rows of anti-eclipse voltage clamp circuits helps settle the clamp voltage more rapidly and to compensate for the increased length of the anti-eclipse voltage circuit row as well as the column line resistance due to narrow metal lines and increased numbers of pixels as well as the requirement to operate a sensor at a higher frame rate. More significantly this circuit construction can minimize vertical shading in the resulting image.

Abstract: Provided is an imaging apparatus, including: a vertical scanning circuit configured to output the reset signal and the image signal sequentially from each of a plurality of pixels by selecting the plurality of pixels sequentially; and an amplifier unit configured to output a plurality of image signals obtained by amplifying one image signal that is output from one of the plurality of pixels at a plurality of gains including a first gain and a second gain, in which, in a reading period, which is a period between selection of a first pixel by the vertical scanning circuit out of the plurality of pixels and subsequent selection of a second pixel out of the plurality of pixels, a number of times the amplifier unit is reset is less than a number of the plurality of amplified image signals.

Abstract: The present disclosure relates to a solid-state imaging device, an AD converter, and an electronic apparatus that improve a crosstalk characteristic. The AD converter includes a comparator that compares the pixel signal with the reference signal, a pixel signal side capacitor, and a reference signal side capacitor. The pixel signal side capacitor and the reference signal side capacitor are formed such that a first parasitic capacity and a second parasitic capacity are substantially the same. The present technology is applicable to a CMOS image sensor, for example.

Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.

Abstract: A pixel output level control device may include: a pixel output level control unit suitable for controlling a pixel output level of a pixel signal of a pixel for reducing the time required for settling the pixel signal during a specific period; and a pixel output level retention unit suitable for maintaining the pixel output level of the pixel signal during the specific period to a fixed value, according to control of the pixel output level control unit.

Abstract: Methods, systems, computer-readable media, and apparatuses for dynamic pixel binning are presented. In one example, an image sensor system includes a plurality of sensor elements; a plurality of floating diffusion regions in communication with the plurality of sensor elements, each floating diffusion region of the plurality of floating diffusion regions configured to be selectively enabled; and at least one comparison circuit coupled to at least two floating diffusion regions of the plurality of floating diffusion regions, the comparison circuit configured to: receive input signals from the two floating diffusion regions, compare the input signals, and output a comparison signal based on the comparison of the input signals.

Abstract: A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

Abstract: A pixel portion includes a first pixel array in which a plurality of photoelectric conversion reading parts of first pixels are arranged in a matrix, a holding part array in which a plurality of signal holding parts of first pixels are arranged in a matrix, and a second pixel array in which a plurality of photoelectric conversion reading parts of second pixels are arranged in a matrix, wherein, at the time of a rolling shutter mode, readout signals of the photoelectric conversion reading parts of the first pixels and the second pixels are immediately output to a first vertical signal line without following a bypass route and, at the time of a global shutter mode, held signals of the signal holding parts of the first pixels are output to a second vertical signal line. Due to this, a solid-state imaging device can prevent complication of the configuration.

Abstract: The present technology relates to an image sensor capable of achieving both higher S/N and higher frame rate, an electronic device, a control device, a control method, and a program. An AD converter has a comparator in which differential pairs are provided at an input stage. The differential pairs have a plurality of transistors as first transistors and second transistors paired to configure the differential pairs. The AD converter compares a level-changing reference signal with an electric signal output by a shooting unit for performing photoelectric conversion and outputting the electric signal, thereby performing AD conversion on the electric signal. The comparator is controlled such that a transistor to be operated is selected as active transistor from among the transistors depending on the amount of light incident in the shooting unit and the active transistor operates. The present technology is applicable to an image sensor for shooting an image, and the like, for example.

Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that realize a high frame rate image capture without deteriorating an image quality. A floating diffusion holds a charge accumulated on one or more photoelectric conversion units. A plurality of amplification transistors read out a signal corresponding to the charge held by the floating diffusion. The signal read out by the amplification transistor is output to a vertical signal line. The plurality of amplification transistors are connected in parallel. The present technology is applicable to a CMOS image sensor, for example.

Abstract: An imaging device includes pixels including a photoelectric conversion unit, a holding unit holding charge transferred from the photoelectric conversion unit, and an amplifier unit outputting signal based on the charge. The pixels output a first signal based on charge generated in a first exposure period and a second signal based on charge generated in a second exposure period of different length. In the first exposure period, the photoelectric conversion unit accumulates the generated charge, and charge held by the holding unit is transferred to the amplifier unit. The second exposure period includes a period of accumulating the generated charge only in the photoelectric conversion unit and a period of holding the generated charge in the photoelectric conversion unit and the holding unit. In the period of accumulating the generated charge only in the photoelectric conversion unit, the charge held by the holding unit is transferred to the amplifier unit.

Abstract: A solid-state imaging device where when the charge from a photodiode PD11 is small, all of the charge is transferred to the feedback capacitor to obtain an output voltage amplified with a high gain due to a mirror effect created by a CTIA circuit including an amplifier arranged in a readout circuit and a feedback capacitor, while when the CTIA circuit is saturated, due to automatic reduction of the mirror effect, the remaining excessive charge is moved to a floating diffusion FD11 having a larger capacitance to obtain an output voltage amplified with a low gain and where the obtained voltage is simultaneously output from the pixel and taken into a column sampling circuit. Due to this, a low-luminance signal can be read out with a high gain, a high-luminance signal can be read out with a low gain suppressing saturation, and in addition, signals of a high gain and low gain can be obtained by two reading operations. Further, it becomes possible to improve the lowest object illuminance performance.

Abstract: In order to provide an imaging device suitable for suppressing a reduction of the frame rate without deteriorating the image quality, a sensor includes two photodiodes for receiving incident light through a microlens, a first transfer transistor that transfers the output electric charges of the first photodiode when a first transfer control signal becomes active, a second transfer transistor that transfers the output electric charges of the second photodiode when a second transfer control signal becomes active, a first output signal line that transmits a first pixel signal depending on the transferred electric charges by the first transfer transistor, and a second output signal line that transmits a second pixel signal depending on the transferred electric charges by the second transfer transistor.

Abstract: An event-based sensor and a pixel of the event-based sensor are provided. The event-based sensor includes a pixel array including pixels, a selection circuit configured to select a part of the pixels, an event circuit configured to generate an event signal indicating an active pixel sensing an event among the selected part of the pixels, based on output signals of the selected part of the pixels, and an output circuit configured to output information indicating the active pixel based on the event signal.

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.