Abstract: The invention proposes an image sensor comprising a picture capture matrix having N rows and K columns of image dots, a read register at the free end of the K columns. In order to improve the read speed of the matrix, the invention proposes that the horizontal transfer into the read register be continued even while the vertical signals for shifting from one row to the other are operative, without however continuing the horizontal transfer while the transfer gate between columns and horizontal register is open. The unloading time of the horizontal read register therefore overlaps the time reserved for each vertical transfer step, instead of these times being added together. The gain in time, being repeated for each row, will be all the more significant the higher the number of rows. Means are provided for limiting the effect of the column transfer switching operations on the reading of the charges at the output of the read register.

Abstract: An image capture device includes a plurality of image capture elements for capturing an object image, a plurality of vertical output lines for reading signals out of the plurality of image capture elements, and a plurality of processing circuits. Each processing circuit includes a first capacitor element having a first electrode connected to one of the plurality of vertical output lines, a differential amplifier having a first input terminal connected to a second electrode of the first capacitor element, a second capacitor element connected between the first input terminal and an output terminal of the differential amplifier, and a first switch configured to control conduction between the first input terminal and the output terminal of the differential amplifier.

Abstract: A drive method of a CCD color image sensor for realizing an electronic shutter function with the signal charge accumulation time varying from one color to another according to a simple structure is provided. Unnecessary charges occurring in photoelectric conversion element groups of colors are transferred in shift registers in the time period in which signal charges are accumulated in the photoelectric conversion element groups of at least colors of R, G, and B (t2<t<t5), and the signal charges accumulated in the photoelectric conversion element groups of colors in response to different time periods according to the colors set in the photoelectric conversion element groups of colors (R: t4<t<t5, G: t3<t<t5, and B: t2<t<t5) are transferred in the shift registers in the time period in which unnecessary charges are accumulated in the photoelectric conversion element groups of colors (t0<t<t1).

Abstract: In addition to transfer units for transferring electric charges generated from photo receiving units for every cell, a high-speed transfer unit is provided which transfers electric charges generated from the photo receiving units collectively on a unit basis of plural cells, whereby a reading speed can be made higher without making the operation speed of a driving circuit higher. To be more concrete, the number of shift cycles necessary for transferring from the transfer unit electric charges generated from the photo receiving units during the open time period of a shutter or electric charges generated from the photo receiving units during a time period except for the open time period of the shutter can be reduced.

Abstract: A method of driving a CCD solid-state image pickup device, the device comprising: a plurality of vertical charge-transfer channels that vertically transfers signal charges responsive to amounts of light received; a signal-charge temporary accumulation section, provided at an end of each of the vertical charge-transfer channels, that is driven independently of driving of the vertical charge-transfer channels; and a horizontal charge-transfer channel through which signal charges transferred from the signal-charge temporary accumulation section are transferred to an output terminal side, wherein the method comprising performing vertical transfers of signal charges through the vertical charge-transfer channels during a period of a horizontal transfer of signal charges through the horizontal charge-transfer channel, while the horizontal transfer through the horizontal charge-transfer channel is brought to a temporary stop for each pulse-edge time of driving pulses to drive the vertical charge-transfer channels.

Abstract: An image-signal processing apparatus (1) designed to process the signals output from a CCD image sensor (10) that reads pixel data for one screen, line by line, divides the pixel data into a plurality of channels and outputs the pixel data thus divided. The image-signal processing apparatus (1) detects and corrects the black level of each pixel data item that the image sensor (10) has output for one channel. The image-signal processing apparatus (1) detects and corrects the gain difference between channels, which pertain to the pixel data items output from the image sensor (10). Hence, the apparatus (1) can correct the black level of each pixel data item and the gain difference between channels with high accuracy, when used in combination with an image sensor that divides pixel data into a plurality of channels.

Abstract: An image-sensing device has pixel areas for outputting CCD signals of plural channels, and an adjusting portion for adjusting a level of each channel of the CCD signals outputted from the pixel area. A first channel CCD signal is provided from a pixel area 11a, a horizontal OB area 15a, a slide shift area 12a, and an HCCD 13a. A second channel CCD signal is provided from a pixel area 11b, a horizontal OB area 15b, a slide shift area 12b, and an HCCD 13b. Both of the first and second CCD signals are supplied to the adjusting portion with a reference signal added. The adjusting portion controls CCD signal of each channel by making the level of reference signal the same. The variation of the shift efficiency of electric charge in the border of pixel areas 11a and 11b for each channel, and in the slide shift areas 13a and 13b can be compensated.

Abstract: The invention provides a signal charge-coupled device (CCD) sensing apparatus, including at least one first CCD shift register, one first photo sensor set, and one second photo sensor set. The first CCD shift register includes a plurality of first CCD components and a plurality of second CCD components. The first photo sensor set includes multiple first photo sensors for receiving a first light signal and generating multiple first corresponding charge signals. The first charge signals can be received by the first CCD components. On the other hand, the second photo sensor set includes multiple second photo sensors for receiving a second light signal and generating multiple second corresponding charge signals. The second charge signals can be received by the second CCD components. The CCD sensing apparatus can acquire higher scanned image quality under high resolution.

Abstract: A charge read-out method and a solid-state imaging device capable of shortening a read-out time of charges stored in a plurality of light receiving units arranged linearly are provided. The charge read-out method includes the steps of moving the charges, which are generated and stored in the plurality of light receiving units linearly arranged by receiving light, to charge transfer paths disposed along a row of the light receiving units on both sides thereof, transferring the charges along the charge transfer paths to an output unit, and calculating a sum of converted values based on amounts of the charges transferred from the charge transfer paths for outputting.

Abstract: In an imaging apparatus, a method of correcting image data, or a storage medium storing a program, a target is imaged in a plurality of imaging regions and image data is output from each of the plurality of imaging regions; based on the image data captured in a first imaging operation, an imbalance in output levels of image data respectively output from the plurality of imaging regions in a second imaging operation is corrected; and an imaging condition in the first imaging operation is controlled in accordance with an imaging condition in the second imaging operation. Accordingly, an imbalance in a plurality of image data simultaneously output from a plurality of output terminals of an imaging device is automatically corrected appropriately even if an imaging condition changes.

Abstract: An image sensing device operates in a first and a second picture image mode. The image sensing device includes a pixel area having a first vertical transferring CCD to transfer a first electric charge converted from an optical image and a second vertical transferring CCD to transfer a second electric charge of optical black level respectively. The image sensing device includes a block portion for selectively blocking the first and second electric charge, wherein the first and second electric charges are outputted without block operation of the block portion and transferred to the horizontal CCD in the first picture image mode and wherein the block portion selectively blocks the first electric charge, and the first electric charge unblocked and the second electric charge are transferred to the horizontal CCD at different timing in a second picture image mode.

Abstract: An image-sensing apparatus for compensating video signal of a plurality of channels, adds an electric charge of a pilot signal on a signal vertically transferred in an image-sensing device 11. A pixel area of the image-sensing device 11 is divided into a plurality of pixel areas to obtain an output signal of a plurality of channels. The pilot signal is add to an output signal of each pixel area corresponding to each channel for twice a field period, and for different electric potential. The control circuit 15 obtains a difference between the two pilot signals in one filed period, and controls the gain compensation 17 to make the pilot signal level in each channel equal. Additionally, the pilot signal is not used for compensation but the previous signal is used when a smear element is detected from the output signal of each channel.

Abstract: In a solid-state image pickup device, third transfer electrodes are disposed in parallel to vertical transfer registers, and second transfer electrodes are disposed vertically to the vertical transfer registers. These transfer electrodes are also formed on the read-out gate portions to supply a driving voltage for reading out signal charges from photoelectric conversion elements. On the basis of the driving voltage applied to both the third and second transfer electrodes, the read-out of the signal charges to the vertical transfer registers is carried out. At the portion where the read-out of the signal charges is carried out, the transfer electrode at the read-out gate portion side and the sensor area of the photoelectric conversion element are formed so as to be adjacent to each other. At the portion where no read-out of signal charges is carried out, an offset area is provided between the transfer electrode at the read-out gate portion side and the sensor area of the photoelectric conversion element.

Abstract: To provide a solid-state image sensor, wherein no field adjustment of timing pulse phases used in the signal processor or of signal balances is needed, and noise performance is more improved, with a simple, miniaturized and economical configuration, a solid-state image sensor (1) of the invention comprises: a CCD (2) configured on a semiconductor chip for generating a CCD signal according to an optical image focused on a sensor area thereof; an on-chip signal processor (4) configured on the semiconductor chip by way of the same fabrication process with the CCD including a noise reduction circuit for eliminating noises from the CCD signal, an AGC circuit for amplifying output of of the noise reduction circuit; and a timing pulse generator (3) configured on the semiconductor chip by way of the same fabrication process with the CCD (2) for generating timing pulses used the on-chip signal processor.

Abstract: A radiation-image data readout apparatus in which the charge transferring time occurring during a readout operation utilizing a line sensor having a broad-width light-receiving portion is shortened is provided. A line sensor having two photodiode portions, each having a width of 100 um, disposed adjacently with a microscopic gap therebetween, and a charge transferring device corresponding to each photodiode portion provided on the exterior side in the width direction of each corresponding photodiode portion, are provided.

Abstract: A solid state image pickup device of high integration, high photoelectric conversion and high transfer performances is made of: a plurality of photoelectric conversion elements disposed in a matrix shape on the surface of a semiconductor substrate, the photoelectric conversion elements in an even column being shifted by about a half of a photoelectric conversion element pitch in the even column from the photoelectric conversion elements in an odd column, and the photoelectric conversion elements in an even row being shifted by about a half of a photoelectric conversion element pitch in the even row from the photoelectric conversion elements in an odd row; a plurality of transfer channel regions formed on the semiconductor substrate, each being disposed near a corresponding photoelectric conversion element column, having a stripe plan shape, and extending and weaving along the column direction; and a plurality of transfer electrodes traversing the transfer channel regions and extending as a whole in the row di

Abstract: In a charge transfer device which has many two-layered transfer electrodes, 8L disposed along a charge transfer direction X above a transfer channel is driven with two-phase driving pulses supplied to the transfer electrodes of the second layer, the transfer channel below the last-stage transfer electrode disposed at the last stage of the charge transfer direction X is constructed to have three-step potential, and the potential is set to be stepwise deeper from the upstream side to the downstream side in the charge transfer direction X.

Abstract: An optically operated test structure for testing the charge transfer efficiency (CTE) of a charge coupled device (CCD) solid-state image sensor. A solid-state image sensor includes a substrate of a semiconductor material of one conductivity type having a surface. A plurality of spaced, parallel CCDs are in the substrate at the surface. Each CCD includes a channel region and a plurality of conductive gates extending across and insulated from the channel region. The conductive gates extend laterally across the channel regions of all of the CCDs and divide the channel regions into a plurality of phases and pixels. A drain region of the opposite conductivity type is in the substrate at the surface and extends along the channel region of at least one of the CCDs. A simply connected (rectangular) region of the plurality of spaced, parallel CCDs is photoactive. The CCDs outside this photoactive region are typically covered with metal or some other optically opaque material.

Abstract: An information processing apparatus, disposed between a controlling portion and hardware, for performing a process corresponding to a program that contains capsulated process portions for controlling the hardware in response to messages received from the controlling portion. The program includes a first process portion for communicating with the controlling portion; a second process portion for communicating with first and second hardware; a third process portion for communicating with the first process portion and the second process portion and executing an interfacing process corresponding to the first hardware; and a fourth process portion for communicating with the first process portion and the second process portion and executing an interfacing process corresponding to the second hardware. The first process portion outputs a message to either the third process portion or the fourth process portion corresponding to a message received from the controlling portion.

Abstract: A solid state image pickup device has a drive unit with an all pixel drive mode for reading all pixels in a horizontal direction and a pixel skip drive mode for reading pixels in the horizontal direction by skipping some pixels, and a plurality of read-out systems for reading pixels. In the all pixel drive mode, signals of pixels are divisionally read by the plurality of read-out systems, and in the pixel skip drive mode, signals of pixels are read by one of the plurality of read-out systems. In this manner, in the pixel skip drive mode, the power consumption can be reduced and a difference between output signal levels to be caused by a variation in characteristics of elements of the read-out system can be suppressed.

Abstract: A solid-state image pickup device includes image pickup means having at least two sensor arrays disposed so as to be adjacent to each other, and horizontal charge transfer means having at least two horizontal registers which are disposed so as to be adjacent to the image pickup means and provided in association with the at least two sensor arrays respectively. A method of driving the solid-state image pickup device transfers the charges picked up at the respective pixels of the sensor arrays to the corresponding horizontal registers. After all the charges picked up at the respective pixels of the sensor arrays are transferred to the horizontal registers, the charges are successively transferred in the horizontal direction.

Abstract: A line scan sensor includes first and second rows of pixels, corresponding first and second readout registers, and a first clocking structure disposed between the first row of pixels and the first readout register. The first clocking structure includes a transfer gate electrode and a delay well electrode. In an alternative embodiment, a method includes a first step followed by a second step. The first step includes transferring photo charges in a delay register into a first readout register, transferring photo charges in a first storage register into the delay register, and transferring photo charges in a second storage register into the second readout register. The second step includes collecting photo charges in the first storage register, collecting photo charges in the second register, shifting photo charges in a first readout register toward a first out put, and shifting photo charges in a second readout register toward a second output.

Abstract: A photoelectric conversion apparatus includes a plurality of elements (D) for receiving reflected light from an object, photoelectrically converting it into image signals (OS1-OS4), and outputting the image signals, a first output buffer (121) for outputting image signals received from even elements of the plurality of elements in the line from one end to the other end, a second output buffer (122) for outputting image signals received from odd elements from one end to the other end, a third output buffer (123) for outputting image signals received from even elements from the other end to the one end, and a fourth output buffer (124) for outputting image signals received from odd elements from the other end to the one end.

Abstract: An imaging device formed as a CMOS semiconductor integrated circuit having two adjacent pixels in a row connected to a common column line. By having adjacent pixels of a row share column lines, the CMOS imager circuit eliminates half the column lines of a traditional imager allowing the fabrication of a smaller imager. The imaging device also maybe fabricated to have a diagonal active area to facilitate contact of two adjacent pixels with the single column line and allow linear row select lines, reset lines and column lines.

Abstract: An interline transfer type solid imaging device includes a first photosensitive section, a second photosensitive section, and a vertical transfer section. The interline transfer type solid imaging device reads an image signal corresponding to a first field from the first photosensitive section, and reads an image signal corresponding to a second field from the second photosensitive section. First signal charges stored in the first photosensitive section are read into the vertical transfer section. A portion of second signal charges stored in the second photosensitive section are shifted into the first photosensitive section.

Abstract: A charge transfer device is disclosed wherein three pixel rows are arranged adjacently to each other. First to third pixel rows are arranged adjacently to each other, and the charge transfer device includes a first charge transfer element for reading out and transferring signal charges generated in the first pixel row and a second charge transfer element for reading out and transferring signal charges generated in the second and third pixel rows. Second readout electrodes for reading out signal charges generated in the second pixel row into the second charge transfer element are provided with one electrode placed between adjacent pixels of the third pixel row.

Abstract: The linear image sensor according to the present invention includes a light receiving a member consisting of at least three light receiving pixel lines 11, 12 and 13; signal charge transfer sections 31, 32, 33, 34, 35 and 36 located on both sides of each of the light receiving pixel lines 11, 12 and 13 of the light receiving a member; and branch transfer sections 33c and 34c which branch from the signal charge transfer sections 33 and 34, which are located on both sides of at least one of the at least three light receiving pixel lines 11, 12 and 13, to extend to reach the signal charge transfer sections 32 and 35 of the adjacent light receiving pixel lines 11 and 13.

Abstract: An n-type semiconductor substrate 11 has a p-type well 12 in which are formed a charge transfer channel 13, a flowing diffusion region 14 made of an n-type impurity region, an n-type buried region 16 and a reset drain region 15. Transfer gates 51 and 52 of a horizontal CCD and an output gate 41 are formed on the surface of the charge transfer channel 13, with an insulation film 20 interposed; reset electrodes 31 and 32 are formed on the surface of the buried region 16, again with the insulation film 20 interposed. The floating diffusion region 14 is connected to a source follower circuit 6. The reset electrodes 31 and 32 are provided adjacent to each other in the channel direction of a reset gate section 3 and can be driven independently of each other.

Abstract: In a solid-state image capturing device 100 comprising pixel arrays 11r, 11g and 11b arranged in a row direction and a column direction which is orthogonal thereto and a vertical register 12 including a plurality of transfer electrodes in which a signal charge generated by light acceptance of each pixel is read and is sequentially transferred in the column direction upon receipt of a transfer pulse, an electrode terminal for generating K (K is an integer of 2 or more) continuous electric potential wells for a signal charge in the vertical register 12 upon receipt of the transfer pulse and an electrode terminal for generating one electric potential well for a smear charge after the K electric potential wells for a signal charge are provided as electrode terminals 101 to 116 for cyclically transmitting the transfer pulse to each of the transfer electrodes.

Abstract: Four photo-sensor blocks, for instance, are arrayed in series in a main scan direction within a sensor unit. In each photo-sensor block, 1280 photo sensors, for instance, are arrayed linearly. The adjacent photo-sensor blocks are placed so that they read image data in reverse directions with each other. The read-out image data are once stored in a buffer, and re-arrayed in the order corresponding to the main scan direction of the document before the data are read out from the buffer.

Abstract: A preselected lenticular image is created by capturing a first digital image on a plurality of first charged coupled device (CCD) sensor columns (21, 31). A second digital image is created on a plurality of second CCD sensor columns (22, 32). The first and second digital images are stored in an interleaved fashion and previewed on a lenticular screen (112) attached to a camera (10).

Abstract: The initial value T0 of the period of a four-phase driving signal for driving a CCD of an image pickup device is calculated according to the equation T0=(L×p)/(f×v). Wherein, L represents the distance from the CCD to a product (object), if represents the focus length of the optical system used between the CCD and product, v represents the transferring speed of the product, and p represents the distance interval of photodiodes of the CCD. Afterward, the period T of the driving signal is adjusted properly depending on the pickup position of the product. Because electric charges corresponding to the same portion of the image of the product are accumulated in the same potential well formed by the driving signal by generating the driving signal as described above, the image of the product is picked up with suppressed blurring regardless of the speed of the product. Blurring is prevented during image pickup of an transferring object by the method described above.

Abstract: A substantially semicylindrical lens having a lensing function, a shading-correcting (reducing) function, and a predetermined-wavelength transmitting function is formed on the upper surface of a device chip including a sensor array, a CCD transfer register, a read-out gate, and the like. The substantially semicylindrical lens is semicircular in cross section along a second direction, and has a lens surface curved in a first direction so that its diameter is larger at both ends in the first direction than in the center in order to serve a function of correcting the shading caused by the optical conditions outside the device. The substantially semicylindrical lens is partially or entirely made of a substance that is transmissive with respect to a signal having a predetermined wavelength.

Abstract: The number of terminals for a timing signal generating device and the vertical drive device for a solid-state image pickup element is to be reduced, and at the same time the circuit dimensions of the timing signal generating device and the vertical drive device which are increased by the reduction in the number of terminals are to be kept to the minimum. A timing signal generating circuit is provided with a time-division multiplexing circuit, and this time-division multiplexing circuit subjects timing signals vertical transfer pulses and timing signals for read pulses to time-division multiplexing. On the other hand, a vertical driver is provided with a demultiplexing circuit, and the demultiplexing circuit separates four-bit signals subjected to time-division multiplexing into the original timing signals and timing signals. This enables the number of terminals (the number of signal lines) of the timing signal generating circuit and the time-division multiplexing circuit to be reduced.

Abstract: Known full-frame imagers, as used in digital cameras, for example, may comprise a monitor-mode read out mode. In such a mode, a subset of the total number of lines, for example 240 lines, that have been recorded in the imaging section is used, while the remaining lines are dumped (vertical subsampling). This facilitates the readout of 15 . . . 0.30 images per second, which can be displayed on an LCD monitor that may be used as a viewfinder of the camera.

Abstract: A high-speed image pickup method and controller of an image pickup device are provided.

Abstract: One horizontal CCD register is provided for a plurality of vertical CCD registers. The horizontal CCD register has horizontal transfer electrodes in such a manner that transfer electrodes that are provided for each pair of vertical CCD registers adjacent to each other are independent of each other electrically. The eight transfer electrodes are supplied with eight kinds of horizontal transfer pulse signals, respectively. An operation that the horizontal CCD register consecutively outputs consecutive signal charges in the same manner as in the conventional two-phase driving method and an operation that the horizontal CCD register outputs consecutive signal charges while mixing desired ones are performed selectively by controlling the eight kinds of horizontal transfer pulse signals properly.

Abstract: The invention pertains to solid-state imaging devices and methods of operating the imaging devices for imaging objects having a wide dynamic range of illumination levels. The imaging device preferably comprises a two-dimensional array of photosensors, such as photodiodes, arranged in columns and even and odd rows. The photosensors accumulate signal charges corresponding to the incident light flux for an accumulation time. In one embodiment, the even and odd rows accumulate signal charges for different accumulation times. The signal charges from adjacent rows and the same column are preferably summed. In addition, the accumulation times for the even and odd rows preferably alternate between a first and a second accumulation time. Alternatively, alternate image fields acquire signal charge for alternating accumulation times. The longer accumulation time is set so that one or more of the photosensors saturates.

Abstract: In a CCD image apparatus in which an image section is horizontally divided into two areas, two horizontal CCDs are related to the two image areas with one-to-one correspondence and transfer the signal electric charges of the two image areas, and the two horizontal CCDs are driven in an identical direction by the same horizontal-driving pulses.

Abstract: Control gate sections capable of prohibiting transfer from vertical CCDs to a horizontal CCD of signal charges generated in selected regions of an imaging area in the horizontal direction are provided between the vertical CCDs to the horizontal CCD. This configuration allows reading of signal charges only in a particular region in the horizontal direction. As a result, high-speed imaging can be realized without increasing the drive frequency.

Abstract: A method for controlling a charge-coupled device (CCD) sensing module. The CCD sensing module includes photosensors divided into two sets of photosensors including a first set of photosensors and a second set of photosensors. First, the first set of photosensors and the second set of photosensors are exposed, and first signal charges obtained from the first set of photosensors and second signal charges obtained from the second set of photosensors are stored into a CCD shift register unit. Then, the first signal charges and the second signal charges stored in the CCD shift register unit are sequentially shifted to a charge receiving unit and an image signal corresponding to the first signal charges is acquired. After that, the first set of photosensors and the second set of photosensors are exposed, and the first signal charges obtained from the first set of photosensors and the second signal charges obtained from the second set of photosensors are stored into the CCD shift register unit.

Abstract: A charge coupled device of this invention includes photodiodes, VCCDs for shifting the image charges generated in the photodiodes in one direction or in the reverse direction, first HCCD formed on one sides of the VCCDs transmitting the image charges from the VCCDs in one direction, and second HCCD formed on the other side of the VCCDs transmitting the image charges to the VCCDs in the reverse direction.

Abstract: A solid-state imaging device has a progressive-scan structure and includes, in a unit pixel area of a semiconductor substrate, a photoelectric conversion region and a vertical transfer CCD region for reading and transferring a signal charge stored in the photoelectric conversion region by performing four-phase driving using two vertical transfer electrodes each having a two-layer structure formed over the semiconductor substrate with a gate insulation layer disposed therebetween. Among the two vertical transfer electrodes each having a two-layer structure, lead parts of one vertical transfer electrode having the two-layer structure are positioned on the photoelectric conversion region in the unit area.

Abstract: In a CCD type solid state image pickup apparatus including two-dimensionally arranged photodiodes, a plurality of vertical transfer registers, and at least one horizontal transfer register, at least two different signal charges of each column of the photodiodes based upon different charge storing time periods are transferred to one of the vertical transfer registers, so that the different signal charges are combined with respective smear charges within the vertical transfer registers. The different signal charges combined with the smear charges and independent smear charges are transferred to the horizontal transfer register. One of the independent smear charges is subtracted from each of the different signal charges combined with the smear charges, and as a result, obtained different signal charges are summed to generate an output voltage.

Abstract: A solid state image sensor having an unnecessary electric charge exhausting section formed adjacent to a horizontal electric charge transfer section, comprises an N−− semiconductor substrate 1 having a P-well layer 2 formed on a principal surface thereof. On the P-well layer 2, there is formed a horizontal electric charge transfer section adjacent to one end of each of a number of vertical electric charge transfer sections. A transfer channel 15A of each vertical electric charge transfer section and an electric charge barrier region 5A of a transfer channel of the horizontal electric charge transfer section are formed of an N-type semiconductor region, and an electric charge storing region 6A of the transfer channel of the horizontal electric charge transfer section are formed of an N+ semiconductor region. A potential barrier region 11A is formed at the side of the horizontal electric charge transfer section opposite to the vertical electric charge transfer sections.

Abstract: A charge-coupled device image sensor comprises a matrix array of photodiodes and a horizontal charge-coupled device (CCD). First vertical CCDs are provided, each on one side of each column of the photodiodes for receiving charge packets from the photodiodes of odd-numbered rows and moving the charge packets to the horizontal CCD and second vertical CCDs are provided, each on the other side of each column of the photodiodes for receiving charge packets from the photodiodes of even-numbered rows and moving the charge packets to the horizontal CCD. The horizontal CCD receives the charge packets from the first and second vertical CCDs and transfers the received charge packets to external circuitry. According to a modified embodiment, a second horizontal CCD is provided for receiving the charge packets from the second vertical CCDs.

Abstract: The photo-receptive area (21) of an image sensor is formed from a plurality of pixels (20) each having a sensor (23) for generating an electric signal in response to a brightness of incident light. To the sensors (23) are connected signal storage/read-out CCDs (24A-24F), respectively, each comprising a plurality of charge storages (25a-25f) and being elongated over two or more of the plurality of pixels (20). A plurality of the linear-shaped signal storage/read-out CCDs (24A-24F) are arranged parallel within a width of each pixel (20). For an image sensing process, electric signals generated in the sensors of the pixels (20) are transferred parallel in one direction by the plurality of signal storage/read-out CCDs (24A-24F), by which the electric signals generated in the sensors are stored in the charge storages (25a-25f) of the signal storage/read-out CCDs (24A-24F).

Abstract: A imaging sensor according to the present invention has pixel lines 1a, 1b and 1c arranged to three lines. At both sides of the pixel lines 1b arranged to the center, the corresponding shift electrodes 21 and 22, and corresponding CCD registers 31 and 32 are provided. At the outside of the outside pixel lines 1a and 1c, the corresponding shift electrodes 2a and 2c, and the corresponding CCD registers 3a and 3c are provided, respectively. Because the CCD registers 3a and 3c corresponding to the pixel lines 1a and 1c of both ends are arranged to the outside of the pixel lines 1a and 1c, it is possible to narrow the distance between the adjacent pixel lines. Because the signal electric charge converted from the optical signal by means of the pixel line 1b arranged to the center is distributed to two CCD registers 31 and 32, even if narrowing the width of each of the CCD registers 31 and 32, it is possible to transfer more amount of the electric charge than the conventional sensor.

Abstract: A solid-state image device includes a pixel portion with n pixels arranged a first direction and a first and second charge transfer portions substantially orthogonally to each other. Further, the solid-state image device having a driving circuit for driving the first charge transfer portion, wherein the driving circuit drives the first charge transfer portion so as to (1) read a signal from an i-th pixel counted from the side of the second charge transfer portion among the n pixels arranged in the pixel portion to a j-th bit portion of the first charge transfer portion, (2) transfer the read signal in the first direction by (k-1)/k bits, (3) define i=i+1, and (4) repeat the steps (1) through (3) from a first pixel closest to the second charge transfer portion to a pixel farthest from the second charge transfer portion among the pixels arranged in the pixel portion, where k is an integer of 2 or more, and j=INT[{(I-1)/k}+1] (where INT[ ] is an integer portion of[ ] (a fractional portion is discarded)).

Abstract: A solid-state imaging device has a storage section formed on a surface portion of a semiconductor substrate to receive and store signal charges, a discharge section formed on the surface portion of the substrate at a predetermined distance from the storage section, a reset section constituted by a depletion-type MOS transistor formed between the storage section and the discharge section, and reset voltage setting means for setting a voltage of a reset pulse to be applied to the reset section. The reset voltage setting section has first and second resistive elements series-connected between one end to which a predetermined voltage is applied and the other end which is grounded. A node which connects the first resistive element to the second resistive element is connected to a reset voltage application electrode.