Abstract: An embodiment of the present disclosure provides a thin film transistor, a method of manufacturing the thin film transistor and a display apparatus including the thin film transistor. The thin film transistor includes an active layer on a substrate, a gate electrode disposed apart from the active layer to at least partially overlap the active layer, and a gate insulation layer between the active layer and the gate electrode. The gate insulation layer can cover an entire top surface of the active layer facing the gate electrode. The active layer can include a channel part overlapping the gate electrode, a conductivity-providing part which does not overlap the gate electrode, and an offset part between the channel part and the conductivity-providing part. The offset part may not overlap the gate electrode, and the conductivity-providing part can be doped with a dopant.

Abstract: Disclosed is an array substrate and a liquid crystal display panel including a display area and a non-display area at the periphery of the display area. The array substrate is provided with a plurality of conductive bonding pads distributed at intervals in the non-display area, in which the conductive bonding pad includes a first metal layer, an insulating layer and a conductive layer sequentially formed on a base substrate, in which the insulating layer is provided with a plurality of vias to electrically connect the conductive layer to the first common electrode, in which the via is provided in a slit shape and is disposed at a predetermined angle from a first direction in which the non-display area surrounds the display area.

Abstract: The present disclosure provides a liquid crystal display panel and a liquid crystal display device. The liquid crystal display panel includes a plurality of sub-pixels defined by a light shielding matrix, and an array substrate and an opposing substrate arranged to be spaced apart from each other. The opposing substrate includes a first substrate and a plurality of spacers, wherein the spacers are on a side of the first substrate close to the array substrate and being within a light shielding area of the light shielding matrix. The array substrate includes a second substrate and a plurality of protrusion structures, wherein the protrusion structures are on a side of the second substrate close to the opposing substrate, and being within the light shielding area of the light shielding matrix.

Abstract: An organic light emitting diode display substrate, comprises: a base substrate, and a first data line, a driving thin film transistor and an energy storage capacitor, wherein the energy storage capacitor comprises a first capacitor plate and a second capacitor plate disposed opposite to each other, and the second capacitor plate is electrically connected to a gate of the driving thin film transistor, in a direction away from the base substrate, the first capacitor plate is disposed between the first data line and the second capacitor plate. The display substrate further comprises a power line and a voltage equalizing line which are electrically connected, the power line extends in a first direction which is substantially parallel to a direction in which the first data line extends, and the voltage equalizing line extends in a second direction. A method of manufacturing the display substrate and a display device are also provided.

Abstract: A device having a stack of layers defining source and pixel conductors at a first level, gate and common conductors at a second level, semiconductor channels between the source and pixel conductors and gate dielectric capacitively coupling the semiconductor channels to the gate conductors. The pixel and common conductors are configured such that, in use, a change in potential difference between the pixel and common conductors in a pixel region induces a change in one or more optical properties of a liquid crystal material in the pixel region.

Abstract: A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70° to about 90°. A thickness of the capping layer is in a range of about 100 ? to about 300 ?, and a thickness of the main conductive layer is in a range of about 1,000 ? to about 20,000 ?.

Abstract: A method for manufacturing a circuit board with narrow conductive traces and narrow spaces between traces includes a base layer and two first wiring layers disposed on opposite surfaces of the base layer. Each first wiring layer includes a first bottom wiring and a first electroplated copper wiring. The first bottom wiring is formed on the base layer. The first bottom wiring includes a first end facing the base layer, a second end opposite to the first end, and a first sidewall connecting the first end and the second end. The first electroplated copper wiring covers the second end and the first sidewall of the first bottom wiring.

Abstract: An alignment film is given a 2-layer structure comprising a photoalignment film that is photoalignable and a low-resistivity alignment film whose resistivity is smaller than that of the photoalignment film. The photoalignment film is formed by a polyimide whose precursor is polyamide acid alkyl ester, the number molecular weight of the photoalignment film is large, and the stability of alignment of the photoalignment film by photoalignment is excellent. The low-resistivity alignment film is formed by a polyimide whose precursor is polyamide acid, the number molecular weight of the low-resistivity alignment film is small, and the resistivity of the low-resistivity alignment film is small. The 2-layer structure alignment film can be maintaining an excellent photoalignment characteristic, so DC afterimages can be controlled.

Abstract: Disclosed is a display device including a transistor showing extremely low off current. In order to reduce the off current, a semiconductor material whose band gap is greater than that of a silicon semiconductor is used for forming a transistor, and the concentration of an impurity which serves as a carrier donor of the semiconductor material is reduced. Specifically, an oxide semiconductor whose band gap is greater than or equal to 2 eV, preferably greater than or equal to 2.5 eV, more preferably greater than or equal to 3 eV is used for a semiconductor layer of a transistor, and the concentration of an impurity which serves as a carrier donor included is reduced. Consequently, the off current of the transistor per micrometer in channel width can be reduced to lower than 10 zA/?m at room temperature and lower than 100 zA/?m at 85° C.

Abstract: A gate driver on array (GOA) display panel is provided, including a display area, a bezel area, a plurality of pixel units, and a GOA circuit. The plurality of pixel units are disposed in the display area in an array. The GOA circuit includes a GOA unit group and a trace group. The GOA unit group is disposed in the display area. The trace group is electrically connected to the GOA unit group and is disposed in the bezel area. The trace group includes a GOA bus and a common electrode line. A super narrow bezel design is achieved by arranging the cascaded GOA unit group of the GOA circuit within the display area.

Abstract: A device having a scattering which can be varied by liquid crystals includes a first electrode, an electroactive layer and a second electrode. It includes, between the first electrode and the electroactive layer, a first transparent polymeric barrier layer with a thickness of T1 and optionally, between the second electrode and the electroactive layer, a second transparent polymeric barrier layer with a thickness of T2, T1 being nonzero and at least 1 ?m, and T1+T2 being at most 40 ?m. The first polymeric barrier layer carries the first electrode or the first electrode is on a first dielectric substrate. The second optional polymeric barrier layer carries the second electrode or the second electrode is on a second dielectric substrate.

Abstract: A thin film transistor and a method for manufacturing the same, an array substrate and an electronic device. The thin film transistor includes a gate, a gate insulator, an active layer, a source and a drain. A protective structure is disposed on a side of the source and the drain close to the gate.

Abstract: A display panel, a control method thereof, and a display device are disclosed. The display panel includes a display module and a backlight module, and the display module and the backlight module are relatively movably connected with each other through a connection component so that the backlight module is switchable between a first state and a second state. In the first state, the backlight module is blocked by the display module, and in the second state, the backlight module is exposed.

Abstract: A liquid crystal panel includes a first substrate and a second substrate. The first substrate includes a plurality of first wires, a second wire that intersects with the plurality of first wires, and a third wire that is arranged in a layer different from a layer in which the second wire is arranged and that is arranged in parallel to the second wire. An aperture is formed in at least any of all intersection portions in which the plurality of first wires and the second wire intersect. The second wire and the third wire are connected through a contact hole that is formed in the aperture.

Abstract: An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

Abstract: A display panel includes first and second test lines connected to the each of data lines, extending in the second direction, and arranged in the first direction, a first test pad electrically connected to the first test line, the first test pad and the first test line being formed from a same layer, and a second test pad electrically connected to the second test line through a contact hole formed through a first insulation layer and disposed adjacent to the first test pad in the second direction.

Abstract: A first oxide semiconductor region serving as a channel region of a TFT is formed on a first insulating region of a gate insulating film whose hydrogen content is comparatively low, and a second oxide semiconductor region that contacts with a source electrode and a drain electrode is formed on a second insulating region of a gate insulating film whose hydrogen content is comparatively high. For this reason, sheet resistance R1 of the first oxide semiconductor region is comparatively high, and sheet resistance R3 of the second oxide semiconductor region is comparatively low so that R1>R3.

Abstract: A LCD device containing an active drive dot matrix LCD element, each pixel containing subsidiary pixels each having a color filter; a passive drive segment display LCD element laminated on rear side of the active drive LCD element, having segment electrode, arranged to be applied with a set voltage, the segment electrode having edge defining a segment shape; cross-nicol polarizers disposed on both outer sides of the LCD elements; controller circuit including first part controlling voltages to be applied to subsidiary pixels, and second part controlling voltages to be applied to the segment electrode; wherein the display device produce normally black display in the absence of applied voltage; and wherein when the segment electrode is activated, those subsidiary pixels in pixels outside the edge of the activated segment electrode are partly driven and partly not driven, displaying different color or intermediate grade, than the conventional art.

Abstract: An electrode for an electrochromic device includes a resistive layer disposed over a conductive layer. The resistive layer is disposed between the conductive layer and an electrochromic material in the electrochromic device. The electrode reduces non-uniform response of the electrochromic material when the electrochromic device is in operation.

Abstract: A common structure of HVA pads comprises a set of HVA pads for common use. The set of HVA pads includes n clock pads, m DC high potential pads for inputting DC high potentials, a DC low potential pad for inputting a DC low potential, and n clock transferring circuits corresponding to the n clock pads separately. m is a natural number larger than one illustrating the number of chips using in common the set of HVA pads, n is a natural number. The n clock pads are connected separately to the corresponding n clock transferring circuits for inputting corresponding clock signals to the n clock transferring circuits individually. The m DC high potential pads and the DC low potential pad are connected to each the clock transferring circuit for inputting m DC high potentials and a DC low potential to each the clock transferring circuit.

Abstract: An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

Abstract: According to an embodiment of the present disclosure, a method for manufacturing the array substrate includes forming a first transparent conductive layer and a metallic layer successively on a base substrate, and forming a gate electrode, a source electrode, a drain electrode and a first transparent electrode by one patterning process.

Abstract: The present invention provides a method for manufacturing a graphene thin-film transistor, which includes: depositing a graphene layer on a surface of a copper foil; depositing a metal layer on a surface of the graphene layer; attaching a support layer to a surface of the metal layer to form a graphene film; placing the graphene film in a copper etching solution until the copper foil is dissolved completely, then transferring the graphene film to a target substrate, and removing the support layer; defining patterns of a source and a drain on the surface of the metal layer, manufacturing a source electrode and a drain electrode, and manufacturing a gate electrode on a target substrate.

Abstract: A fabrication method of an array substrate, an array substrate, and a display device are provided, the array substrate comprising a pixel region, an alignment region and a pixel test region. The alignment region includes an alignment gate layer, an alignment insulating layer and an alignment pixel electrode layer sequentially formed on a substrate, the pixel test region includes a test gate layer, a test insulating layer and a test pixel electrode layer sequentially formed on the substrate, the alignment gate layer and the test gate layer are disposed on a same layer with the gate layer in the pixel region, the alignment pixel electrode layer and the test pixel electrode layer are disposed on a same layer with the pixel electrode layer in the pixel region.

Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

Abstract: A display substrate is provided. The display substrate includes a gate electrode disposed on a base; a gate insulating layer disposed on the base and covering the gate electrode; a semiconductor layer disposed on the gate insulating layer and overlapping the gate electrode; a source electrode and a drain electrode disposed on the semiconductor layer and connected to the semiconductor layer; a pixel electrode disposed on the gate insulating layer, connected to the drain electrode, and extending from the drain electrode; a common electrode insulated from the pixel electrode and overlapping the pixel electrode; and a semiconductor pattern disposed between the gate insulating layer and the pixel electrode, the semiconductor pattern overlapping the pixel electrode. The semiconductor pattern comprises a same material as the semiconductor layer and extends from the semiconductor layer.

Abstract: To provide a semiconductor device that includes an oxide semiconductor and is miniaturized while keeping good electrical properties. In the semiconductor device, an oxide semiconductor layer is surrounded by an insulating layer including an aluminum oxide film containing excess oxygen. Excess oxygen in the aluminum oxide film is supplied to the oxide semiconductor layer including a channel by heat treatment in a manufacturing process of the semiconductor device. Furthermore, the aluminum oxide film forms a barrier against oxygen and hydrogen. It is thus possible to suppress the removal of oxygen from the oxide semiconductor layer surrounded by the insulating layer including an aluminum oxide film, and the entry of impurities such as hydrogen into the oxide semiconductor layer; as a result, the oxide semiconductor layer can be made highly intrinsic. In addition, gate electrode layers over and under the oxide semiconductor layer control the threshold voltage effectively.

Abstract: It is an object of the present invention to form a pixel electrode and a metal film using one resist mask in manufacturing a stacked structure by forming the metal film over the pixel electrode. A conductive film to be a pixel electrode and a metal film are stacked. A resist pattern having a thick region and a region thinner than the thick region is formed over the metal film using an exposure mask having a semi light-transmitting portion. The pixel electrode, and the metal film formed over part of the pixel electrode to be in contact therewith are formed using the resist pattern. Accordingly, a pixel electrode and a metal film can be formed using one resist mask.

Abstract: The present application relates to a conductive film, a method for manufacturing the same, and a display device including the same.

Abstract: To provide a semiconductor device that includes an oxide semiconductor and is miniaturized while keeping good electrical properties. In the semiconductor device, an oxide semiconductor layer is surrounded by an insulating layer including an aluminum oxide film containing excess oxygen. Excess oxygen in the aluminum oxide film is supplied to the oxide semiconductor layer including a channel by heat treatment in a manufacturing process of the semiconductor device. Furthermore, the aluminum oxide film forms a barrier against oxygen and hydrogen. It is thus possible to suppress the removal of oxygen from the oxide semiconductor layer surrounded by the insulating layer including an aluminum oxide film, and the entry of impurities such as hydrogen into the oxide semiconductor layer; as a result, the oxide semiconductor layer can be made highly intrinsic. In addition, gate electrode layers over and under the oxide semiconductor layer control the threshold voltage effectively.

Abstract: A display panel includes first to third test lines connected to the each of data lines, extending in the second direction, and arranged in the first direction, a first test pad electrically connected to the first test line, the first test pad and the first test line being formed from a same layer, a second test pad electrically connected to the second test line through a contact hole formed through a first insulation layer, and disposed adjacent to the first test pad in the second direction, a third test pad electrically connected to the third test line and disposed adjacent to the first test pad in the first direction, the third test pad and the third test line being formed from a same layer.

Abstract: In a liquid crystal display device that uses a TFT, a contact hole is formed to connect an image signal line. An organic film is formed so as to cover the image signal line, and a common electrode, which is a transparent electrode, is formed on the organic film. An interlayer insulating film is formed on the common electrode. A through hole is formed in the interlayer insulating film, and the diameter of the through hole is greater than the diameter of the contact hole.

Abstract: A liquid crystal display includes: an insulation substrate, a gate line disposed on the insulation substrate, a first field generating electrode disposed on the insulation substrate, a gate insulating layer disposed on the gate line and the first field generating electrode, a semiconductor disposed on the gate insulating layer and a data line disposed on the gate insulating layer. A value [N—H]/[Si—H] of the gate insulating layer is in a range of about 13 to about 25. Here, the value [N—H]/[Si—H] means a ratio of a bonding number [N—H] of nitrogen and hydrogen to a bonding number [Si—H] of silicon and hydrogen according to an analysis of an FT-IR spectrometer.

Abstract: A method of manufacturing an electric component disclosed. A first electrically conducting layer including a first electrode of the electric component is formed on a substrate. An interlayer of a dielectric material is formed on the first electrically conducting layer, the dielectric material including an electrically insulating material. A further layer of a dielectric material is deposited on the interlayer of dielectric material, the further layer including a photo-patternable electrically insulating material. Both the further layer and said interlayer are structured, wherein the further layer of the dielectric material is used as a mask for the interlayer. A second electrically conducting layer including a second electrode of the electric component is then formed.

Abstract: The present disclosure relates to the technical field of liquid crystal display, and particularly, relates to a built-in touch liquid crystal display device. The device is further provided with a touch sensing line, and at least in a part of the pixel units, a touch capacitor and a touch switch located between the touch capacitor and the touch sensing line and capable of connecting or disconnecting the both are arranged in correspondence to at least one pixel subunit, and wherein the voltage difference of the touch capacitor can be transferred to the touch sensing line. According to the present disclosure, the existing pressing capacitive built-in touch device is improved. In this way, the defects of this type of device existing before can be overcome. With the pixel aperture ratio improved, the pressing capacitive built-in touch technology can be applied to large-sized panels, and the touch driving circuit is simplified.

Abstract: Disclosed is an LCD device having a dual link structure and a method of manufacturing the same, which can reduce a width of a bezel. A link line structure includes a plurality of first and second link lines which are alternately disposed. The first and second link lines are formed on different layers. Also, embodiments herein provide a method which can reduce the number of masks used in a manufacturing process and can easily manufacture the LCD device in consideration of the possibility of misalignment of exposure equipment.

Abstract: Disclosed is a display device including a transistor showing extremely low off current. In order to reduce the off current, a semiconductor material whose band gap is greater than that of a silicon semiconductor is used for forming a transistor, and the concentration of an impurity which serves as a carrier donor of the semiconductor material is reduced. Specifically, an oxide semiconductor whose band gap is greater than or equal to 2 eV, preferably greater than or equal to 2.5 eV, more preferably greater than or equal to 3 eV is used for a semiconductor layer of a transistor, and the concentration of an impurity which serves as a carrier donor included is reduced. Consequently, the off current of the transistor per micrometer in channel width can be reduced to lower than 10 zA/?m at room temperature and lower than 100 zA/?m at 85° C.

Abstract: An object of the present invention is to provide a transflective liquid crystal display device having an excellent visibility obtained by optimizing the arrangement of a color filter, which would become a problem in the process of fabricating transparent and reflective liquid crystal display devices, for the transflective liquid crystal display device. In the present invention, the arrangement of a color filter is optimized for improving the visibility of the transflective liquid crystal display device. In addition, the structure, which allows the formation of color filters without increasing the capacitance that affects on a display, is fabricated. Furthermore, in the process of fabricating the transflective liquid crystal display device, an uneven structure is additionally formed without particularly increasing an additional patterning step for the formation of such an uneven structure.

Abstract: It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.

Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

Abstract: A low-resistance wiring structure and a liquid crystal display are disclosed. The liquid crystal display includes a first substrate; a thin film transistor (TFT) formed on the first substrate and formed of a gate wiring, a data wiring and a semiconductor layer; and a second substrate attached to the first substrate in a facing manner, wherein at least one of the gate wiring and the data wiring is formed as a first wiring made of copper, a second wiring made of a barrier metal preventing spreading of copper, and a metal oxide film pattern formed between the first and second wirings. A MO/Cu wiring structure is implemented by using pure molybdenum, so that the low-resistance wiring structure with high reliability can be formed at a low cost.

Abstract: To suppress light leakage at the time of dark state, and to provide a liquid crystal display device whose electrodes in the reflection areas can be formed with high precision. The liquid crystal display device has a reflection area within a pixel unit by corresponding at least to a reflection plate forming part, and the reflection area is driven with a lateral electric field mode and normally-white. A driving electrode for forming an electric field to a liquid crystal layer of the reflection area is formed on the reflection plate via an insulating film by using a non-transparent electric conductor.

Abstract: The present invention relates to a thin film transistor substrate and method for fabricating the same which can secure an alignment margin and reduce the number of mask steps. A thin transistor substrate according to the present invention includes a gate line and a data line crossing each other to define a pixel, a gate metal pattern under the data line, a thin film transistor having a gate electrode, a source electrode and a drain electrode in the pixel, and a pixel electrode connected to the drain electrode of the thin film transistor by a connection electrode, wherein the data line has a plurality of first slits to disconnect the gate metal pattern from the gate line.

Abstract: In one embodiment, a liquid crystal display device includes an array substrate having a sensor electrode and a plurality of pixel electrodes, and a counter substrate facing the array substrate. The sensor electrode includes an electric conductive oxide layer, a first electric conductive layer arranged on the electric conductive oxide layer and formed of one metal selected from the group consisting of molybdenum (Mo), titanium (Ti), nickel (nickel), and chromium (Cr), and a second electric conductive layer arranged on the first electric conductive layer and formed of aluminum. The plurality of pixel electrodes is arranged on the sensor electrode in a matrix shape so as to face the electric conductive oxide layer. Each pixel electrode is provided with slits. The thickness of the first electric conductive layer is equal to or less than 10% of the thickness of the second electric conductive layer.

Abstract: An IPS mode LCD device includes gate and data lines on a first substrate and crossing to define pixel regions; a thin film transistor connected to the gate lines and the data lines; a first common electrode and a pixel electrode on the first substrate and alternating with each other in each pixel region, each of the first common electrode and the pixel electrode including lower and upper layers; a color filter layer including red, green and blue color filter patterns and on a second substrate, the color filter patterns corresponding to each pixel region; and a liquid crystal layer between the first and second substrates, wherein at least two of the color filter patterns overlap at a boundary of the pixel regions, and wherein the lower layer is made of MoTi, and the upper layer is made of a transparent conductive material or copper nitride.

Abstract: The touch sensor according to a preferred embodiment of the present invention includes: a transparent substrate; and an electrode formed on the transparent substrate in a mesh pattern, wherein the electrode has a line width of one side smaller than that of the other side in a thickness direction.

Abstract: A method of manufacturing an array substrate for an FFS mode LCD device includes forming a gate line, a gate electrode and a pixel electrode on a substrate; forming a gate insulating layer; forming a data line, source and drain electrodes, and a semiconductor layer on the gate insulating layer, the drain electrode overlapping the pixel electrode; forming a passivation layer on the data line, the source and drain electrodes; forming a contact hole exposing the drain electrode and the pixel electrode by patterning the passivation layer and the gate insulating layer; and forming a common electrode and a connection pattern on the passivation layer, wherein the common electrode includes bar-shaped openings and a hole corresponding to the contact hole, and the connection pattern is disposed in the hole, is spaced apart from the common electrode and contacts the drain electrode and the pixel.

Abstract: The present invention is directed to the provision of a liquid crystal optical element that can accurately change the numerical aperture of an objective lens regardless of variations in temperature or wavelength. The liquid crystal optical element comprises a first substrate, a second substrate, a liquid crystal provided between the first and second substrates, an electrode pattern formed on one of the first and second substrates and having an aperture control region, and an opposite electrode formed on the other one of the first and second substrates, the opposite electrode being opposed to the electrode pattern for applying a voltage therebetween, wherein a plurality of electrodes, for changing refractive index and thereby causing the incident light passing through the aperture control region to diverge, are formed in the aperture control region.

Abstract: A backlight device that illuminates a transmissive liquid crystal panel is disclosed. The device includes: a plurality of light source substrates on which a plurality of light emitting devices irradiating illumination light are mounted; a bottom chassis having one surface to which the plurality of light source substrates are attached; a reflector having openings corresponding to the light emitting devices and through which the light emitting devices are exposed to one surface side, and reflecting the illumination light irradiated from the light emitting devices; a diffuser facing the one surface side of the reflector through a predetermined facing interval and internally diffusing the illumination light incident from the reflector; and an optical function sheet laminate combined with the diffuser on one surface side thereof, containing a stack of a plurality of optical function sheets and guiding the illumination light to the transmissive liquid crystal panel.

Abstract: A backlight device that illuminates a transmissive liquid crystal panel is disclosed. The device includes: a plurality of light source substrates on which a plurality of light emitting devices irradiating illumination light are mounted; a bottom chassis having one surface to which the plurality of light source substrates are attached; a reflector having openings corresponding to the light emitting devices and through which the light emitting devices are exposed to one surface side, and reflecting the illumination light irradiated from the light emitting devices; a diffuser facing the one surface side of the reflector through a predetermined facing interval and internally diffusing the illumination light incident from the reflector; and an optical function sheet laminate combined with the diffuser on one surface side thereof, containing a stack of a plurality of optical function sheets and guiding the illumination light to the transmissive liquid crystal panel.