Abstract: A display device including a substrate, a driving element, a reflective layer and a first auxiliary layer is provided. The substrate has a first area and a second area. The driving element is placed within the first area. The reflective layer is placed above the first area and at least a portion of the second area and coupled to the driving element. The first auxiliary layer is placed on the reflective layer above the first area. The first auxiliary layer improves the electrical characteristic of the reflective layer. A reflectance of the first auxiliary layer is not larger than a reflectance of the reflective layer.

Abstract: A multi-domain liquid crystal display includes a first and a second transparent substrates, a liquid crystal layer interposed between them, a common electrode, a first and a second metal layers, a first and a second dielectric layer, multiple pixel electrodes and multiple auxiliary electrodes. The second metal layer is formed on the first dielectric layer, and the second dielectric layer is formed on the first dielectric layer and covers the second metal layer. The pixel electrodes are formed on the second dielectric layer, each of the pixel electrodes having at least one opening to divide itself into a plurality of sections. The auxiliary electrodes are formed on the second dielectric layer, and each of the auxiliary electrodes extends into the opening of the pixel electrode. The second metal layer is hollowed out at a position overlapping the auxiliary electrode to form at least one opening.

Abstract: The invention relates to a thin film transistor substrate and a display device including the same, and provides a thin film transistor substrate and a display device including the same, which can prevent damage of elements due to static electricity by forming, in each unit pixel region where a pair of first and second pixel electrodes, a pair of first and second drain electrode plates that are connected to the first and second pixel electrodes and to connected to drain terminals of thin film transistors, and can obtain a dot inversion driving effect through line inversion driving by connecting the first drain electrode in one pixel region to the first drain electrode plate, connecting the second drain electrode in the one unit pixel region to the second drain electrode plate, connecting a first drain electrode in another unit pixel region neighboring the one unit pixel region to the second drain electrode plate, and connecting a second drain electrode in another unit pixel region to the first drain electrode

Abstract: A liquid crystal device includes a first substrate and a second substrate disposed opposite the first substrate. The liquid crystal device further has a first light shielding layer of a surface of the first substrate; a first electrode having an electrode portion extending in a predetermined direction; and a second electrode of the surface of the second substrate facing the first substrate. The second electrode is formed such that at least a part thereof overlaps the first light shielding layer in plan view and has an electrode portion extending in a direction along the electrode portion of the first electrode. The device further has a third electrode of the surface of the second substrate; and a liquid crystal layer interposed between the first and second substrates and aligned in an in-plane direction of the first or second substrate.

Abstract: Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.

Abstract: A liquid crystal display device comprising: a switching element that has a drain electrode and that is arranged on a substrate; a first insulating film that covers the switching element and that has a first opening on the drain electrode; a first etching stopper electrode that is formed in the first opening and that is connected to the drain electrode; a common electrode that is arranged on the first insulating film; a second insulating film that covers the first etching stopper electrode and the common electrode, and that has a second opening on the first etching stopper electrode; and a pixel electrode that is connected through the second opening to the first etching stopper electrode and that extends onto the second insulating film so as to face the common electrode.

Abstract: Disclosed herein is a TFT substrate which exhibits good characteristic properties despite the omission of the barrier metal layer to be normally interposed between the source-drain electrodes and the semiconductor layer in the TFT. The TFT substrate permits sure and direct connection with the semiconductor layer of the TFT. The thin film transistor substrate has a substrate, a semiconductor layer and source-drain electrodes. The source-drain electrodes are composed of oxygen-containing layers and thin films of pure copper or a copper alloy. The oxygen-containing layer contains oxygen such that part or all of oxygen combines with silicon in the semiconductor layer. And, the thin films of pure copper or a copper alloy connect with the semiconductor layer of the thin film transistor through the oxygen-containing layers.

Abstract: A liquid crystal display device including, a pair of substrates, a gate electrode of a thin film transistor (TFT) formed on one of the substrates, and a wiring layer connected to the gate electrode or an electrode of the thin film transistor, wherein at least a part of the gate electrode or a part the wiring layer is formed by a layer structured by a pure copper layer and a Cu—Mn alloy layer including Mn, wherein a concentration of Mn in the Cu—Mn alloy layer is more than 0.1 and not more than 20 atomic percentage within a solubility limit of Mn in the copper, and wherein a boundary surface between the Cu—Mn alloy layer and said one of the substrate includes an oxide layer having a Mn oxide layer.

Abstract: A fabrication method of an LCD includes providing a substrate having a first region and a second region; forming a storage line in the first region and an active pattern in the second region of the substrate; forming a first insulation film on the substrate; forming a gate electrode and a pixel electrode on the substrate; forming a second insulation film on the substrate; and forming a source electrode and a drain electrode, the source electrode connected to a source region via a contact hole and the drain electrode connected to a drain region through the contact hole. The fabrication method may obtain a sufficient storage capacitance with a simplified process. The number of masks used for fabrication of a thin film transistor (TFT) may be reduced.

Abstract: A manufacturing method of a transflective LCD comprising forming a multiple layer on a substrate by depositing transparent electrode layer and a gate metal layer sequentially, forming a gate line, a gate electrode, a gate pad forming part and a data pad forming part by patterning the multiple layer, forming a gate insulating layer, forming a semiconductor layer, forming a data line, a source electrode and a drain electrode, forming a passivation layer and an organic insulating layer and forming a gate pad and a data pad by providing contact holes exposing the transparent electrode layer on the gate pad forming part and the data pad forming part, respectively. Accordingly, it is an aspect of the present invention to provide a manufacturing method of a transflective LCD using less masks and a transflective LCD thereof.

Abstract: A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

Abstract: A liquid crystal display device and a fabricating method having a simplified process are disclosed. The liquid crystal display device comprises, among other features, first and second substrates, a gate line crossing a data line with a gate insulating film therebetween to define a pixel area. A common line is provided on the substrate substantially parallel to the gate line, and a common electrode is extended from the common line into the pixel area. A pixel electrode is extended from a drain electrode into the pixel area to form a horizontal electric field with the common electrode. The data line, a source electrode, a drain electrode and the pixel electrode are formed of a first conductive layer group having at least double conductive layers, and are formed in an area to be sealed by a sealant upon joining the first and second substrates.

Abstract: A liquid crystal display device and a fabricating method thereof for simplifying a process are disclosed. In the method of fabricating the liquid crystal display device, a first conductive pattern group including a gate line and a gate electrode, a common line and a common electrode, a pixel electrode and a pad is formed on a substrate. An insulating film including a plurality of contact holes and a semiconductor pattern is formed on the first mask pattern group. And a second conductive pattern group including a data line, a source electrode and a drain electrode is formed on an insulating film provided with the semiconductor pattern, and exposes an active layer of the semiconductor pattern.

Abstract: A method for manufacturing a TFT array panel including forming a gate line having a gate electrode on a insulating layer, a gate insulating layer on the gate line, a semiconductor on the gate insulating layer, an ohmic contact on the semiconductor, a data line having a source electrode and a drain electrode apart form the source electrode on the ohmic contact, a passivation layer having a contact hole to expose the drain electrode, and a pixel electrode connected to the drain electrode through the contact hole. The drain electrode and the source electrode are formed by a photolithography using a negative photoresist pattern. The negative photoresist pattern includes a first portion having a first thickness corresponding to a channel area, a second portion having a second thickness corresponding to a data line area, and a third portion having a third thickness corresponding to another area.

Abstract: A liquid crystal display (LCD) array substrate and its manufacturing method are provided. Scan lines and data lines of the LCD array substrate are composed of two conductive layers to decrease their RC delay. Moreover, the dielectric layer and even the planarization layer are removed from pixel areas defined by the scan lines and the data lines to increase the light penetration percentage.

Abstract: It is to provide a liquid crystal display device capable of readily obtaining bend alignment across an entire liquid crystal display panel of the liquid crystal display device, with obtaining brightness while obtaining a high speed responsiveness, a feature of an OCB mode, as well as without increasing a load on an activating driver. The liquid crystal display device is arranged such that: a liquid crystal molecule in a liquid crystal layer sandwiched between a pair of substrates facing each other has a pretilt angle of not less 18° and not more than 36°; a product ?nd of a refractive index anisotropy ?n and a thickness d of the liquid crystal layer is not less than 850 nm and not more than 1170 nm; and a lateral electric field generating structure for applying an electric field parallel to the substrates and bend-aligning the liquid crystal molecules is provided in a region corresponding to a pixel.

Abstract: A LCD device includes a gate line on a substrate and a data line crossing the gate line to define a pixel area; a thin film transistor source and drain electrodes; a common line parallel to the gate line; a common electrode extended from the common line and a pixel electrode extending from the drain electrode wherein the gate line and the common line have a first conductive layer group having at least double conductive layers, and the common electrode is formed by an extension of at least one transparent conductive layer of the common line; and the gate line, the source electrode and the drain electrode have a second conductive layer group having at least double conductive layers, and the pixel electrode is formed by an extension of at least one transparent conductive layer of the drain electrode.

Abstract: A method of fabricating a pixel structure of liquid crystal display is described. A transparent conductive layer and a first metal layer are formed over a substrate sequentially. The first metal layer and the transparent conductive layer are patterned to form a gate pattern and a pixel electrode pattern. A gate insulating layer and a semiconductor layer are formed over the substrate sequentially. A patterning process is performed to preserve the semiconductor layer and the gate insulating layer above the gate pattern and remove the first metal layer of the pixel electrode pattern. A second metal layer is formed over the substrate. The second metal layer is patterned to form a source pattern and a drain pattern. A black material layer is formed over the substrate, and then the black material layer is patterned to form a black matrix pattern uncovering the transparent conductive layer of the pixel electrode pattern.

Abstract: A method for forming a pixel electrode on a substrate, including: forming a bank corresponding to a region for forming the pixel electrode on a substrate; disposing, by a liquid ejection method, a first functional liquid containing transparent conductive microparticles in the region partitioned by the bank; drying the first functional liquid to produce a first layer film; disposing, by a liquid ejection method, a second functional liquid containing a silicon compound onto the first layer film; and forming a pixel electrode made of a laminate that includes: a transparent conductive layer which is formed by calcining together the first layer film and the second functional liquid and is composed of the first layer film and silicon oxide filling a pore in the first layer film; and a silicon oxide layer formed on the transparent conductive layer.

Abstract: Disclosed are a transreflective type LCD and a method of manufacturing the same. A color filter substrate is formed with a light transreflective member for reflecting an external light or transmitting an artificial light and a visual angle increasing member for increasing the visual angle of the light from the light transreflective member. A thickness of a color filter varies to obtain a uniformity of the light from the light transreflective member regardless of the transmissive and the reflective modes. The light from the light transreflective member is provided through a TFT substrate to a user as an image.

Abstract: The present invention provides a liquid crystal display device comprising a liquid crystal display panel which includes a pair of substrates and liquid crystal sandwiched between the pair of substrates, the liquid crystal display panel including a plurality of sub pixels, each sub pixel of the plurality of sub pixels including a pixel electrode and a counter electrode, and the pixel electrode and the counter electrode generating an electric field for driving the liquid crystal, wherein a terminal portion is formed in a region outside a display region on one substrate out of the pair of substrates, the terminal portion includes a lower electrode portion and an upper electrode portion which is formed on the lower electrode portion and is electrically connected with the lower electrode portion, and the upper electrode portion is constituted of a first transparent conductive film and a second transparent conductive film which is formed on the first transparent conductive film.

Abstract: A liquid crystal display device includes: pixel electrodes arranged in columns and rows, each including a reflective electrode region; scanning lines; and signal lines. The device sequentially supplies a scanning signal voltage to one of the scanning lines after another to select one group of pixel electrodes, connected to the same one of the scanning lines, after another, and then supplies display signal voltages to the selected group of pixel electrodes by way of the signal lines, thereby displaying an image thereon. The pixel electrodes are arranged such that the polarity of a voltage to be applied to a liquid crystal layer is inverted for every predetermined number of pixel electrodes in each of the rows and in each of the columns. The display signal voltage to be supplied to each pixel electrode is updated at a frequency of 45 Hz or less.

Abstract: A 2-dimensional and 3-dimensional image display device and a method of manufacturing the same is described. The display device includes an image display panel for displaying an image, and a switching panel having upper and lower substrates with a liquid crystal layer interposed therebetween. A pixel electrode, and first and second common electrodes, are formed on the lower substrate of the switching panel.

Abstract: An active array substrate, a liquid crystal display panel and a method for manufacturing the active array substrate are provided. The active array substrate includes a base, scan lines, data lines and gate tracking lines disposed on the base. Each of the gate tracking lines has first portions, auxiliary portions and junction portions, wherein the junction portion and the first portion are formed in different layers. One of the junction portions is electrically connected with corresponding one of the first portions.

Abstract: The present invention reduces a connection failure between two conductive layers which are connected with each other via a through hole in a display device and reduces a defect of an orientation film formed on a TFT substrate side in a liquid crystal display device. A display device includes a display panel in which a first conductive layer formed on a surface of a substrate, and a second conductive layer which is formed over the first conductive layer as viewed from a surface of the substrate by way of a thin film layer formed of one insulation film or two or more stacked thin films including one insulation film are electrically connected with each other in an opening portion formed in the thin film layer. Out of opening ends of the opening portion of the thin film layer, an outer periphery of the opening end remote from the surface of the substrate changes a distance from the surface of the substrate one time or more during one turn of the outer periphery.

Abstract: A pixel structure suitable for being disposed on a substrate is provided. The pixel structure includes a scan line, a data line, a thin film transistor (TFT), a primary pixel electrode, and at least one secondary pixel electrode. The scan line and the data line are disposed on the substrate. The TFT is disposed on the substrate and is electrically connected to the scan line and the data line. The primary pixel electrode is electrically connected to a drain electrode of the TFT through a contact hole. The secondary pixel electrode is disposed above the drain electrode and the drain electrode is electrically coupled to the secondary pixel electrode. Besides, a liquid crystal display (LCD) panel having the pixel structure is also provided.

Abstract: A liquid crystal display device includes a first thin film transistor having an active layer, a gate electrode with a double conductive layer structure overlapping the active layer with a gate insulating film there between, a source electrode and a drain electrode connected to the active layer through first and second contact holes which penetrate an interlayer insulating film on the gate insulating film; a pixel electrode having a double layer structure, including a first transparent conductive layer and a second conductive layer, formed on the gate insulating film, wherein a portion of the first transparent conductive layer is exposed through a first transmission hole, which penetrates the interlayer insulating film; a luminescence layer on a portion of the pixel electrode; and a common electrode on the luminescence layer.

Abstract: A thin film conductor having improved adhesion and superior conductivity, a method for fabricating the same, a thin film transistor (TFT) plate including the thin film conductor, and a method for fabricating the TFT plate are provided. The thin film conductor includes an adhesive layer containing an oxidation-reactive metal or silicidation-reactive metal and silver, a silver conductive layer formed on the adhesive layer, and a protection layer formed on the silver conductive layer and containing an oxidation-reactive metal and silver.

Abstract: A method for manufacturing a substrate, includes: coating the substrate with a first layer including a first metallic element by a dry deposition technique; coating the first layer with a photo resist layer; forming on the photo resist layer an exposure portion, a pair of non-exposure portions being in contact with the exposure portion and having a substantially parallel stripe-like plan shape, and a half exposure portion that is a part of an inner region of the non-exposure portions and an outer region of the non-exposure portions; removing the exposure portion and an upper portion of the half exposure portion, the upper portion having been exposed; forming an electrode portion and a wiring portion by etching the first layer exposed by removing the exposure portion; exposing the electrode portion and the wiring portion by removing the half exposure portion of which the upper portion has been removed, and forming a pair of banks by the pair of non-exposure portions; applying a treatment solution including a s

Abstract: An active matrix substrate has: scanning lines extending in row direction and image data lines extending in column direction, formed in display area; semiconductor islands at each cross point and in peripheral circuit area; a first gate insulating film formed on each pixel semiconductor island; a first gate made of a first wiring layer and formed on said first gate insulating film; a second gate insulating film thinner than the first gate insulating film formed on peripheral circuit semiconductor island; and a second gate electrode made of a second wiring layer and formed on the second gate insulating film, wherein the pixel transistor semiconductor island, first gate insulating film and first gate electrode constitute a pixel transistor, and the scanning line includes a lower layer made of the second wiring line and an upper layer made of the first wiring line connected to the lower layer.

Abstract: A liquid crystal display device and a fabricating method thereof for simplifying a process are disclosed. In the method of fabricating the liquid crystal display device, a first conductive pattern group including a gate line and a gate electrode, a common line and a common electrode, a pixel electrode and a pad is formed on a substrate. An insulating film including a plurality of contact holes and a semiconductor pattern is formed on the first mask pattern group.

Abstract: A method of forming an oxide film on a surface of a copper alloy, including the steps of providing a copper alloy including copper and an element selected from the group consisting of Mn, Zn, Ga, Li, Ge, Sr, Ag, Ba, Pr and Nd, and diffusing atoms of the element to a surface of the copper alloy so as to form an oxide film on the surface of the copper alloy, wherein a concentration of the element in the copper alloy is more than 0.1 and not more than 20 atomic percentage and within a solubility limit of the element in the copper.

Abstract: A thin film transistor substrate of fringe field switching type and a fabricating method thereof for simplifying a process are disclosed. In the thin film transistor substrate of fringe field switching type, a gate line has a multiple-layer structure and includes a transparent conductive layer. A data line crosses the gate line to define a pixel area. A thin film transistor is connected to the gate line and the data line. A common line is provided in a multiple-layer structure and in parallel to the gate line. A common electrode is formed by an extension of a transparent conductive layer of the common line at said pixel area. A pixel electrode is connected to the thin film transistor to form a fringe field with the common electrode in the pixel area.

Abstract: Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.

Abstract: An active matrix liquid crystal display device includes first and second substrates, a liquid crystal layer disposed between the first and second substrates, and plural image signal lines and scan signal lines formed on the first substrate. Respective pixel regions are formed by adjacent image signal lines and adjacent scan signal lines, and the respective pixel regions have at least one of a semiconductor layer, a pixel electrode, a counter electrode, and a source electrode which connects the semiconductor layer to the pixel electrode. The pixel electrode is formed between the source electrode and the first substrate.

Abstract: When a conductive layer is formed, a first liquid composition containing a conductive material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern), and a first conductive layer (insulating layer) having a frame-shape is formed. A second liquid composition containing a conductive material is applied so as to fill a space inside the first conductive layer having a frame-shape, whereby a second conductive layer is formed. The first conductive layer and the second conductive layer are formed so as to be in contact with each other, and the first conductive layer is formed so as to surround the second conductive layer. Therefore, the first conductive layer and the second conductive layer can be used as one continuous conductive layer.

Abstract: A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.

Abstract: A liquid crystal display device includes first substrate having an active region and a non-active region along a peripheral portion of the active region, a second substrate facing and spaced apart from the first substrate, and having an active region and a non-active region along a peripheral portion of the active region, a seal pattern between the first and second substrates disposed along a border of the active and non-active regions, a gate line on an interior surface of the first substrate and crossing the seal pattern, a data line crossing the gate line and the seal pattern, a thin film transistor connected to the gate line and the data line, a pixel electrode connected to the thin film transistor, a common electrode on an interior surface of the second surface, a first step-compensating pattern adjacent to the seal pattern and the gate line, a second step-compensating pattern adjacent to the seal pattern and the data line, and a liquid crystal material layer between the pixel electrode and the common el

Abstract: A pixel well includes first and second electrodes below a floor.

Abstract: An array substrate for an LCD device and a manufacturing method thereof. The array substrate includes: a gate line, a gate electrode, a gate pad, and a pixel electrode formed on the substrate; a gate insulation layer formed on the substrate to expose the gate line and the pixel electrode; a source electrode connected to a data line crossing the gate line, a drain electrode facing the source electrode with a channel interposed, a data pad formed at one end of the data line, and a capacitor electrode overlapping portions of the pixel electrode and the gate line; a semiconductor layer constituting the channel between the source electrode and the drain electrode; first, second, third, and fourth contact holes formed in the gate pad, the data pad, the capacitor electrode, and the drain electrode, respectively; and first through fourth contact electrodes formed in the first through fourth contact holes, respectively.

Abstract: A method of fabricating a liquid crystal display device according to the present invention includes a first mask process of forming a first mask pattern group including a gate line, a gate electrode, a common line and a common electrode on a substrate, a second mask process of forming a gate insulating film on the first mask pattern group and a semiconductor pattern and an opaque conductive pattern on the gate insulating film, and a third mask process of forming a transparent conductive pattern on the opaque conductive pattern and forming a protective film, wherein one end of the protective film is contacted with one end of the transparent conductive pattern.

Abstract: A pixel structure of a transflective LCD panel includes a substrate, a data line and a scan, a thin film transistor containing an extending electrode, a first common electrode and a second common electrode, a transmissive pixel electrode, and a reflective pixel electrode forming a first coupling capacitor with the extending electrode and a second coupling capacitor with the second common electrode. The first and second common electrodes and the data line overlap with each other in an overlapping area, wherein the first common electrode is disposed between the second common electrode and the data line.

Abstract: A liquid crystal display device having a simplified manufacturing process is disclosed. The liquid crystal display device includes a gate line and a common line having a first conductive layer group having at least double conductive layers. A common electrode is formed by an extension of at least one transparent conductive layer of a common line. A portion of the common electrode is formed of one conductive layer of the first conductive layer group, while a remaining portion of the common electrode is formed of the first conductive layer group. The gate line, a source electrode and a drain electrode have a second conductive layer group having at least double conductive layers, and the pixel electrode is formed by an extension of at least one transparent conductive layer of the drain electrode.

Abstract: A liquid crystal display device and a fabricating method having a simplified process are disclosed. The liquid crystal display device comprises, among other features, first and second substrates, a gate line crossing a data line with a gate insulating film therebetween to define a pixel area. A common line is provided on the substrate substantially parallel to the gate line, and a common electrode is extended from the common line into the pixel area. A pixel electrode is extended from a drain electrode into the pixel area to form a horizontal electric field with the common electrode. The data line, a source electrode, a drain electrode and the pixel electrode are formed of a first conductive layer group having at least double conductive layers, and are formed in an area to be sealed by a sealant upon joining the first and second substrates.

Abstract: A liquid crystal display (LCD) array substrate and its manufacturing method are provided. Scan lines and data lines of the LCD array substrate are composed of two conductive layers to decrease their RC delay. Moreover, the dielectric layer and even the planarization layer are removed from pixel areas defined by the scan lines and the data lines to increase the light penetration percentage.

Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

Abstract: A fringe field switching thin film transistor substrate includes a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode opposed to the pixel electrode and a semiconductor layer defining a channel between the source electrode and the drain electrode. A common electrode extends from the common line into the pixel area. A pixel electrode extends from the drain electrode into the pixel area overlapping the common electrode with the gate insulating film. The gate line and the common line are formed from a first conductive layer group having double conductive layers, and the common electrode is formed by an extension of the lowermost layer of the common line. The data line, the source electrode and the drain electrode are formed of a second conductive layer group having double conductive layers.

Abstract: A pixel structure of the present invention includes two metal plates and a transistor. The metal plates are electrically connected together. The gate of the transistor receives a scan signal. The drain of the transistor receives a data signal. The source of the transistor includes two extending portions. A store capacitor is formed between the two extending portions and the two metal plates. The two extending portions are plate structures.

Abstract: Methods for roll-to-roll deposition of optically transparent and high conductivity metallic thin films are disclosed. In general, a method according to the present invention comprises: (1) providing a flexible plastic substrate; (2) depositing a multi-layered conductive metallic film on the flexible plastic substrate by a thin-film deposition technique to form a composite film; and (3) collecting the composite film in continuous rolls. Typically, the thin conductive metallic film is an InCeO—Ag—InCeO film. Typically, the thin-film deposition technique is DC magnetron sputtering. Another aspect of the invention is a composite film produced by a method according to the present invention.

Abstract: In a TFT LCD device comprising a substrate, at least one thin film transistor formed on the substrate, having a source electrode and a drain electrode, an insulating layer formed over the whole surface of the substrate on which the thin film transistor is formed, having at least one contact hole exposing a portion of the drain electrode, and reflective layer pixel electrode corresponding to the thin film transistor, formed on the insulating layer to be connected with the drain electrode through the contact hole, the pixel electrode is formed of a multi-layered conductive layer. The drain electrode is composed of multiple layers, and the most upper layer of the multiple layers is one selected from a Cr layer and a MoW layer. Preferably, the multi-layered conductive layer is composed of two-layered conductive layer having a lower layer of the same material as that of the most upper layer and an upper layer of Al-containing metal.