Abstract: A liquid crystal display device according to the present invention is constituted of a TFT substrate and an opposing substrate which are arranged so as to be opposite to each other with a liquid crystal layer interposed therebetween. In addition, in the liquid crystal layer, formed is a polymer into which a polymer component added to liquid crystal is polymerized, and which determines directions in which liquid crystal molecules tilt when voltage is applied. In the TFT substrate, formed are a sub picture element electrode directly connected to a TFT and a sub picture element electrode connected to the TFT through capacitive coupling. In each of these sub picture element electrodes, formed are slits extending in directions respectively at angles of 45 degrees, 135 degrees, 225 degrees and 315 degrees to the X axis.

Abstract: A TFT substrate (20) forming a part of a liquid crystal display panel includes: respective pixels having mutually adjacent first sub-pixels and second sub-pixels; first source electrodes (14aba) that branch towards the first sub-pixels and form a portion of respective first TFTs (5a) after respective source lines (14a) between the respective pixels continue along respective gate lines (11a) extending between the first sub-pixels and second sub-pixels of the respective pixels; and a second source electrode (14abb) that branches towards the second sub-pixel and forms a portion of the respective second TFTs (5b). The respective gate lines (11a) have openings where the respective source lines (14a) have branched.

Abstract: A liquid crystal device includes a first dummy pixel and a second dummy pixel adjacent to each other in an X direction, in which width of a first portion of a scanning line between a first transistor of the first dummy pixel and a second transistor of the second dummy pixel is larger than width of a second portion of the scanning line between the second transistor and a third transistor of a pixel.

Abstract: Disclosed is a display device including a transistor showing extremely low off current. In order to reduce the off current, a semiconductor material whose band gap is greater than that of a silicon semiconductor is used for forming a transistor, and the concentration of an impurity which serves as a carrier donor of the semiconductor material is reduced. Specifically, an oxide semiconductor whose band gap is greater than or equal to 2 eV, preferably greater than or equal to 2.5 eV, more preferably greater than or equal to 3 eV is used for a semiconductor layer of a transistor, and the concentration of an impurity which serves as a carrier donor included is reduced. Consequently, the off current of the transistor per micrometer in channel width can be reduced to lower than 10 zA/?m at room temperature and lower than 100 zA/?m at 85° C.

Abstract: An array substrate for a liquid crystal display device includes a substrate, a thin film transistor having a signal line of dual layered structure of a copper compound and copper, and a pixel electrode connected to the thin film transistor.

Abstract: A method of manufacturing an array substrate for an FFS mode LCD device includes forming a gate line, a gate electrode and a pixel electrode on a substrate; forming a gate insulating layer; forming a data line, source and drain electrodes, and a semiconductor layer on the gate insulating layer, the drain electrode overlapping the pixel electrode; forming a passivation layer on the data line, the source and drain electrodes; forming a contact hole exposing the drain electrode and the pixel electrode by patterning the passivation layer and the gate insulating layer; and forming a common electrode and a connection pattern on the passivation layer, wherein the common electrode includes bar-shaped openings and a hole corresponding to the contact hole, and the connection pattern is disposed in the hole, is spaced apart from the common electrode and contacts the drain electrode and the pixel.

Abstract: A method of fabricating a thin film pattern according to an embodiment of the present invention comprises forming an organic material pattern on a substrate, forming a metal material of liquid phase on a substrate provided with the organic material pattern, hardening the metal material of liquid phase, and removing the metal material located on the organic material pattern, allowing some metal material to be left at an area non-overlapped with the organic material pattern.

Abstract: An array substrate comprises: a base substrate; a gate scanning line, a data scanning line, a pixel electrode and a thin film transistor, formed on the base substrate; and a light blocking layer, formed on the base substrate and corresponding to the thin film transistor and the data scanning line.

Abstract: By increasing an interval between electrodes which drives liquid crystals, a gradient of an electric field applied between the electrodes can be controlled and an optimal electric field can be applied between the electrodes. The invention includes a first electrode formed over a substrate, an insulating film formed over the substrate and the first electrode, a thin film transistor including a semiconductor film in which a source, a channel region, and a drain are formed over the insulating film, a second electrode located over the semiconductor film and the first electrode and including first opening patterns, and liquid crystals provided over the second electrode.

Abstract: A thin film transistor includes a gate terminal, an insulation layer formed on the gate terminal, a first semiconductor silicon layer formed on the insulation layer, a source terminal formed on the first semiconductor silicon layer, and a drain terminal. The drain terminal is partially located on the insulation layer and the first semiconductor silicon layer. The drain terminal and the gate terminal overlap each other via the insulation layer to form a first overlap region and also overlap each other via the first semiconductor silicon layer and the insulation layer to form a second overlap region. The first and second overlap regions respectively generate first and second parasitic capacitances. The thin film transistor includes a compensation structure, whereby when the drain terminal is shifted with respect to the gate terminal, the compensation structure maintaining area of the first overlap region and area of the second overlap region unchanged.

Abstract: An embodiment of the present invention provides a TFT array substrate, in which TFT elements and pixel electrodes being correspondingly connected with the TFT elements are arrayed in matrix on an insulating substrate, the TFT array substrate including: gate bus lines made from a first metal material; source bus lines made from a second metal material; pixel electrodes made from a third metal material; a clock wiring made from the first metal material; a branch wiring made from the second metal material; and a connection conductor made from the third metal material, the connection conductor connecting the clock wiring and the branch wiring at a connection part in a periphery area, the connection part having a branch-wiring via hole, which exposes the branch wiring which is covered with the connection conductor, and overlaps the clock wiring at least partly in a plane view.

Abstract: An array substrate for an IPS mode LCD device comprises a substrate; a gate line along a first direction; a data line along a second direction; a TFT connected to the gate and data lines; a common electrode having a plate shape on the substrate and formed of a first transparent conductive material; and a pixel electrode formed of a second transparent conductive material on the common electrode and including first and second portions and a plurality of third portions combining the first portion with the second portion. The first and second portions are parallel to the second direction and separated from each other and the plurality of third portions are oblique to the first and second portions and separated from one another.

Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

Abstract: A liquid crystal display includes a plurality of pixel electrodes and common electrodes disposed on a first substrate that overlap each other with a passivation layer interposed therebetween, and a connection portion disposed between a common voltage applying unit and the common electrode. The common electrode has a plurality of first cutouts, the passivation layer has a plurality of second cutouts, and the first cutout and the second cutout have substantially the same planar shape. The connection portion includes a lower connection portion formed from a same layer as the common electrode, and an upper connection portion disposed on the lower connection portion that includes a low resistance metal.

Abstract: A semiconductor device includes TFTs designed in accordance with characteristics of circuits. In a first structure of the invention, the TFT is formed by using a crystalline silicon film made of a unique crystal structure body. The crystal structure body has a structure in which rod-like or flattened rod-like crystals grow in a direction parallel to each other. In a second structure of the invention, growth distances of lateral growth regions are made different from each other in accordance with channel lengths, of the TFTs. By this, characteristics of TFTs formed in one lateral growth region can be made as uniform as possible.

Abstract: A display substrate includes a switching transistor electrically connected to a gate line and a data line, the data line extending in a first direction substantially perpendicular to the gate line extending in a second direction, the switching transistor including a switching active pattern comprising amorphous silicon, a driving transistor electrically connected to a driving voltage line and the switching transistor, the driving voltage line extended in the first direction, the driving transistor including a driving active pattern comprising a metal oxide; and a light-emitting element electrically connected to the driving transistor.

Abstract: A liquid crystal display includes first and second insulating substrates facing to each other, and a plurality of pixels comprising a plurality of rows and a plurality of columns and divided into a first pixel group comprising only the pixels on a first row and a second pixel group comprising each of the remaining pixels on second to last rows. The pixels of the first pixel group have a first opening ratio, and the pixels of the second pixel group have a second opening ratio different from the first opening ratio. The first opening ratio is smaller than the second opening ratio, and the first opening ratio is about 60% to about 80% of the second opening ratio; and the pixels of the first pixel group but not the pixels of the second pixel group have a light interception pattern in an opening portion.

Abstract: A semiconductor device capable of maintaining data even after instantaneous power reduction or interruption. The semiconductor device includes first to sixth transistors. The first and fourth transistors are p-channel transistors. The second and fifth transistors are n-channel transistors. In the third and sixth transistors, a channel formation region is included in an oxide semiconductor layer. A high voltage is applied to one of a source and a drain of the first transistor and one of a source and a drain of the fourth transistor. A low voltage is applied to one of a source and a drain of the second transistor and one of a source and a drain of the fifth transistor.

Abstract: A semiconductor device capable of maintaining data during instantaneous power reduction or interruption. The semiconductor device includes first to sixth transistors. The first and fourth transistors are p-channel transistors. The second and fifth transistors are n-channel transistors. In the third and sixth transistors, an oxide semiconductor layer includes a channel formation region. A high voltage is applied to one of a source and a drain of the first transistor and one of a source and a drain of the fourth transistor. A low voltage is applied to one of a source and a drain of the second transistor and one of a source and a drain of the fifth transistor.

Abstract: A liquid crystal display device is provided with a thin film transistor which includes a gate electrode film that is provided in a first electrode layer located over a first insulating layer, a semiconductor film that is disposed over the gate electrode film via a second insulating layer, a drain electrode and a source electrode that are provided in a second electrode layer located over the semiconductor film and are in contact with an upper surface of the semiconductor film, and a light blocking film that is disposed under the first insulating layer. At least a part thereof overlaps the semiconductor film and the gate electrode film in a plan view. One of the drain electrode and the source electrode is connected to a gate line, and the light blocking film is electrically connected to the source electrode.

Abstract: A display device includes a gate line and a data line crossing the gate line. The display device further includes a first switching element and a second switching element each connected to the gate line and the data line. The display device further includes a first sub-pixel electrode and a second sub-pixel electrode connected to the first switching element and the second switching element, respectively. The display device further includes a reference voltage line for transmitting a reference voltage, a first portion of the first reference voltage line overlapping a first edge of the first sub-pixel electrode, a second portion of the first reference voltage line overlapping a second edge of the first sub-pixel electrode opposite the first edge of the first sub-pixel electrode. The display device further includes a third switching element connected to the gate line, the first sub-pixel electrode, and the reference voltage line.

Abstract: A thin film transistor liquid crystal display (TFT-LCD) array substrate comprises a plurality of gate lines and a plurality of data lines on a substrate. A plurality of pixel regions are defined by the gate lines and the data lines. Each of the pixel regions comprises a pixel electrode and a thin film transistor serving as a switch element. The gate electrode of the thin film transistor is connected with a corresponding gate line through a connection electrode, and the gate electrode is formed by a material layer different from that forming the gate lines.

Abstract: A liquid crystal display (LCD) includes an array of pixels over a thin film transistor (TFT) substrate. The TFT substrate includes a TFT that has a first metal layer to form a gate electrode and a second metal layer to form a source electrode and a drain electrode for each pixel. The LCD also includes an organic insulation layer disposed over the TFT substrate, where the organic insulator layer has trenches on a top surface. The LCD further includes a third metal layer disposed over the organic insulation layer in the trenches, the trenches having a trench depth at least equal to the thickness of the third metal layer. The LCD also includes a passivation layer over the third metal layer, and a pixel electrode for each pixel over the passivation layer. The LCD further includes a polymer layer over the pixel electrode, and liquid molecules on the polymer layer.

Abstract: A thin film transistor (TFT) structure includes a first metal layer. The first metal layer is configured with an insulating layer, a surface of the insulating layer corresponding to an area above the first metal layer is configured with an active layer made of an indium gallium zinc oxide (IGZO), a second metal layer is formed on a surface of the active layer, the second metal layer is configured with a gap on an upper surface of the active layer, and a groove is formed at the upper surface of the active layer corresponding to an area of the gap.

Abstract: Disclosed is array substrate including a pixel region having a switching region, a driving region and a storage region. A switching TFT in the switching region includes a first gate electrode, a first gate insulating layer, a switching active layer on the first gate insulating layer, a switching source electrode on a first switching ohmic contact layer, and a switching drain electrode on a second switching ohmic contact layer; a driving TFT in the driving region is connected to the switching TFT and includes a first gate electrode, a second gate insulating layer, a driving active layer on the second gate insulating layer, a driving source electrode on a first driving ohmic contact layer, and a driving drain electrode on a second driving ohmic contact layer; wherein at least one of the switching and driving TFTs further includes a second gate electrode over the switching or driving active layers.

Abstract: It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

Abstract: A first substrate includes first and second gate lines extending in a first direction, first and second source lines extending in a second direction and a switching element electrically connected with the gate line and the source line. A pixel electrode includes a contact portion contacting with the switching element and extending in the first direction and a main pixel electrode contacting with the contact portion and extending in the second direction. The switching element includes a drain electrode arranged between the source lines. The drain electrode includes a first electrode portion located under the contact portion, a second electrode portion located under the main pixel electrode and connected with the first electrode portion, a third electrode portion connected with the second electrode portion along the first gate line, and a fourth electrode portion connected with the second electrode portion and extending along the second gate line.

Abstract: A display device includes a display panel including a transistor and a backlight unit providing light to the display panel. The transistor includes a transparent substrate that the backlight unit faces. A gate electrode having a first width is disposed on the transparent substrate. A gate insulating layer, having a barrier layer, is disposed on the gate electrode and the transparent substrate. A semiconductor layer is disposed on the gate insulating layer. The semiconductor layer has a second width greater than the first width.

Abstract: Provided are an organic light emitting display device and a method for manufacturing the same. The organic light emitting display device comprises a transistor on a substrate, a cathode on the transistor and connected to a source or a drain of the transistor, a bank layer on the cathode and having an opening, a metal buffer layer on the cathode, an organic light emitting layer on the metal buffer layer, and an anode on the organic light emitting layer.

Abstract: To provide a plural-viewpoint display device having an image separating optical element such as a lenticular lens or a parallax barrier, which is capable of arranging thin film transistors and wirings while achieving substantially trapezoid apertures and high numerical aperture, and to provide a driving method thereof, a terminal device, and a display panel. A neighboring pixel pair arranged with a gate line interposed therebetween is connected to the gate line placed between the pixels, each of the pixels configuring the neighboring pixel pair is connected to the data line different from each other, and each of the neighboring pixel pairs neighboring to each other in an extending direction of the gate lines is connected to the gate line different from each other.

Abstract: It is an object of the present invention to provide a liquid crystal display device which has a wide viewing angle and less color-shift depending on an angle at which a display screen is seen and can display an image favorably recognized both outdoors in sunlight and dark indoors (or outdoors at night). The liquid crystal display device includes a first portion where display is performed by transmission of light and a second portion where display is performed by reflection of light. Further, a liquid crystal layer includes a liquid crystal molecule which rotates parallel to an electrode plane when a potential difference is generated between two electrodes of a liquid crystal element provided below the liquid crystal layer.

Abstract: A liquid crystal display (LCD) includes thin film transistors (TFTs) respectively coupled to different gate lines and to a pixel electrode and a direction control electrode, and to which different gate-off voltages are respectively applied. Alternatively, a reduced gate voltage is applied to the pixel electrode TFT according to a coupling capacitance. Alternatively, the pixel and direction control TFTs are coupled to the same gate line, and portions of a gate insulating layer are formed with different thicknesses. Resulting differences in the voltages respectively applied to the two TFTs or in the electric fields respectively applied to the two electrodes prevent leakage current of the direction control electrode TFT, thereby enabling stable multi-domains to be implemented in the LCD without applying a high voltage.

Abstract: In a liquid crystal display device, the reduction of power consumption is realized by reddening a backlight while maintaining a white balance. An aperture ratio of a red subpixel and an aperture ratio of a blue subpixel are set such that, in a state where an aperture ratio of a green subpixel in each pixel of a liquid crystal panel is fixed to a desired value, white brightness efficiency takes a maximum value which is set based on a balance between light emission efficiency which is increased corresponding to lowering of a color temperature of the backlight and transmissivity of the pixel which is decreased corresponding to the increase of the aperture ratio of the blue subpixel.

Abstract: Embodiments of the invention disclose an array substrate, a liquid crystal display panel and a driving method for increasing aperture ratio of a pixel area, avoiding display horizontal stripes caused by difference in shape between black matrices in adjacent rows and improving display quality.

Abstract: A thin-film transistor includes a gate electrode made of metal, a light transmissive gate insulating film that covers the gate electrode, a semiconductor film that overlaps with the gate electrode through the gate insulating film, and a source electrode and a drain electrode, made of metal, and spaced from each other. The gate electrode and the semiconductor film have respective through-holes communicated with each other so that the gate insulating film enters an inside of the through-holes. The gate insulating film has an area of the inside of the through-holes of the gate electrode and the semiconductor film. The source electrode and the drain electrode pass through the inside of the through-holes of the gate electrode and the semiconductor film so as to overlap with a part of the area of the inside of the through-hole of the gate insulating film and avoid a remaining portion thereof.

Abstract: A liquid crystal display and a method for manufacturing the same capable of reducing a bezel are disclosed. The liquid crystal display includes a display panel including vertical lines, horizontal lines, and pixels and a driver integrated circuit (IC) supplying a data voltage and a gate pulse to the pixels through the vertical lines. The vertical lines include vertical data lines to which the data voltage is supplied, vertical gate lines to which the gate pulse is supplied, and vertical common voltage lines to which a common voltage is supplied. The horizontal lines include horizontal gate lines which are connected to the vertical gate lines and receive the gate pulse through the vertical gate lines.

Abstract: In one embodiment, a first substrate includes a pixel electrode having a first main electrode in a belt-like shape extending along a first cross line direction which crosses at an acute angle in a counterclockwise direction with respect to an initial alignment direction of liquid crystal molecules, and a second main electrode in the belt-like shape extending along a second cross line direction which crosses at an acute angle in a clockwise direction with respect to the initial alignment direction of the liquid crystal molecules. A second substrate includes a counter electrode having a pair of third main electrodes in the belt-like shape arranged above a pair of regions sandwiching the first main electrode extending along a first cross line direction and a pair of fourth main electrodes in the belt-like shape arranged above a pair of regions sandwiching the second main electrode extending along the second cross line direction.

Abstract: The present invention provides a liquid crystal display device having gate wires and source/drain wires with a multilayer structure made of the same material which can be manufactured at low cost, as well as a manufacturing method for the same. In accordance with the manufacturing method, a wet etching process is carried out on the gate wires and the source/drain wires using an etchant including hydrofluoric acid and an oxidant, and the concentration of hydrofluoric acid in the etchant is different between the etchant for the gate wires and that for the source/drain wires.

Abstract: The present invention is intended to control the color temperature of white exhibited by a liquid crystal display device. White is produced when light waves emitted through pixels associated with three colors of red, green, and blue have maximum intensities. The amounts of light emitted through the respective pixels are controlled by differentiating the shapes of the pixel electrodes disposed at the respective pixels from one another. Thus, the color temperature of white is controlled. Otherwise, the shapes of interceptive films disposed at the respective pixels are differentiated from one another in order to control light waves emitted through the respective pixels. Thus, the color temperature of white is controlled. The interceptive film may be shaped like the pixel electrode. Otherwise, the interceptive film may be realized with an interceptive pattern other than that of the pixel electrode or one of openings bored in a black matrix.

Abstract: An embodiment of the invention relates to a TFT-LCD array substrate comprising a substrate, a gate line and a data line formed on the substrate, a pixel electrode and a thin film transistor formed in a pixel region defined by the gate line and the data line, wherein the thin film transistor comprises a gate electrode, a source electrode, and a transparent drain electrode, and the transparent drain electrode is electrically connected with the pixel electrode.

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

Abstract: A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

Abstract: An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.

Abstract: An array substrate for a liquid crystal display (LCD) device includes a common line and gate lines. The array substrate includes a first, second, and third passivation layer and thin film transistors (TFTs). The second passivation layer includes first and second holes respectively corresponding to a drain electrode and the common line. A common electrode on the second passivation layer includes a first opening corresponding to the TFTs and a second opening in the second hole. A drain contact hole through the third and first passivation layers exposes the drain electrode. A first common contact hole through the third passivation layer exposes the common electrode in the second hole. A second common contact hole through the third and first passivation layers exposes the common line, and a pixel electrode includes a third opening and a connection pattern connecting the common electrode to the common line on the third passivation layer.

Abstract: A liquid crystal display according to an exemplary embodiment of the present invention includes a substrate, a plurality of pixels arranged in a matrix on the substrate where each pixel includes a switching element, a plurality of gate lines that are connected to the switching elements and extend in a row direction, and a gate driver that is connected to the gate lines and is formed on the substrate as an integrated circuit. In the liquid crystal display, the gate driver includes a first region and a second region that is not aligned with the first region.

Abstract: A nanocrystal display includes a display panel including a plurality of pixels; and a substrate including a plurality of pixel areas corresponding to the plurality of pixels, and a boundary area between the pixel areas. Each pixel includes a first electrode on an upper surface of the substrate and in a corresponding pixel area; a second electrode on the upper surface of the substrate and spaced apart from the first electrode in a cross-section direction, a tunnel-shaped cavity defined in the plurality of pixel areas and spaced apart from the substrate by a predetermined distance; and an image display layer in the tunnel-shaped cavity; and a backlight unit which provides a light to the display panel and faces the upper surface of the substrate.

Abstract: Embodiments of the present invention disclose a pixel unit, an array substrate, a liquid crystal panel, a display device and a manufacturing method thereof. The pixel unit comprises a thin film transistor, a pixel electrode and a common electrode, the thin film transistor comprising a gate electrode, a gate insulating layer provided on the gate electrode, an active layer provided on the gate insulating layer, a source electrode and a drain electrode provided on the active layer, and a passivation layer provided on the source electrode and the drain electrode; wherein the common electrode is provided directly on the passivation layer; and the pixel electrode is provided under the passivation layer and is connected to the drain electrode of the thin film transistor. For the array substrate, the liquid crystal panel, the display device and the manufacturing method thereof, it is possible to increase view angles, lower power consumption, and increase aperture ratio, thereby improving display quality.

Abstract: An array substrate, a liquid crystal display panel and a liquid crystal display device. The array substrate comprises data lines, gate lines and a pixel array provided on a base substrate. Each data line is connected with at least one type of sub-pixels in the pixel array, and sub-pixels of same type connected with a same data line have same polarity, and the sub-pixels connected with the same data line are connected with different gate lines, respectively.

Abstract: A liquid crystal display panel that includes a number of pixel electrodes formed on a substrate and are located in a pixel region defined by gate lines and data lines that cross the gate lines. Each of the pixel electrodes located in the pixel region includes a number of sides, and at least one of the sides includes oblique lines and a protrusion formed by the oblique lines, and the pixel electrodes located in the pixel region and adjacent to each other in a first direction form a separation space that includes at least one protrusion, and a width of the separation space gradually reduces and gradually increases in a second direction crossing the first direction, and a singular point that controls the texture of liquid crystals is located at the narrowest width of the separation space.

Abstract: An array substrate and a liquid crystal display device adopt a four-domain electrode structure and have advantages of improving the gradient of a V-T curve and contrast, achieving ideal response time, and the like. The array substrate comprises gate lines, data lines and pixel units defined by the gate lines and the data lines. Pixel electrodes (10) and common electrodes (11) arranged on the same layer are formed in the pixel units. Both the common electrodes (11) and the pixel electrodes (10) adopt a comb structure, and comb teeth of the common electrodes (11) and comb teeth of the pixel electrodes (10) are alternately arranged. Each comb tooth of the comb structure is divided into an upper comb tooth (13) and a lower comb tooth (14) in different directions by a node (12). All the upper comb teeth (13) are parallel to each other, and all the lower comb teeth (14) are parallel to each other.