Abstract: A plurality of pixel electrodes are provided in a display region. A plurality of pixel transistors corresponding to the plurality of pixel electrodes in a one-to-one manner are provided in a region outside the display region. Each of the pixel transistors is connected to the corresponding pixel electrode by a pixel wiring line. An input pad group, to which a drive signal group for driving the plurality of pixel transistors is input, is provided on a TFT substrate. Here, of a region on the TFT substrate, the plurality of pixel transistors are provided only in a region other than a region between the input pad group and the display region.

Abstract: An organic light-emitting display device comprises a substrate, a driving thin-film transistor including an active layer on the substrate, source and drain electrodes directly contacting the active layer, and a gate electrode on the active layer, and an organic light-emitting element connected to the driving thin-film transistor. Each of the source and drain electrodes of the driving thin-film transistor exposes a respective side surface of the active layer.

Abstract: An active matrix substrate includes first lines, a second line, third lines, a first connection electrode, and a second connection electrode. The first lines extend along a first direction and are arranged in a second direction and are portions of a first conductive film. The second line extends along the second direction and cross the first lines and is a portion of a second conductive film. The third lines extend along the second direction and overlap the second line and sandwich one first line and are portions of the first conductive film that differ from the portions configured as the first lines. The first connection electrode crosses the one first line and a second insulating film and is connected to the third lines sandwiching the one first line. The second connection electrode crosses another first line and is connected to the second line and one of the third lines.

Abstract: This application provides a signal measurement circuit and a measurement method thereof. The signal measurement circuit is connected to a scan line and a data line by using a shim, to measure waveform signals of the scan line and the data line.

Abstract: Provided is a technique for decreasing the deterioration of the display quality, while reducing electric power consumption. An active matrix substrate includes a plurality of gate lines Gn, Gn+1, a plurality of source lines S, a plurality of pixels PIX that are provided with pixel electrodes 11, respectively, and pixel switching elements 12 each of which is connected with the pixel electrode 11, the gate line, and the source line. The pixel electrode 11 has a connection portion 11b to which the pixel switching element 12 is connected. The connection portion 11b extends to an adjacent one of the pixels that is adjacent to the pixel where the pixel electrode 11 is provided, in a gate line extending direction. A data signal supplied by a source line has a polarity that is opposite to a polarity of a data signal supplied by an source line adjacent to the source line, and that is inverted every vertical period.

Abstract: A thin film transistor substrate includes: a substrate; an oxide semiconductor layer disposed on the substrate; a gate electrode disposed on the substrate; a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode connected to the oxide semiconductor layer, the source electrode and the drain electrode being spaced apart from each other. The gate insulating layer includes: a first gate insulating layer having an oxygen content lower than that of a stoichiometric composition; and a second gate insulating layer including a material substantially the same as a material which the first gate insulating layer may include, and having an oxygen content higher than that of the first gate insulating layer, and the first gate insulating layer and the oxide semiconductor layer directly contact each other.

Abstract: A thin film transistor array panel including: a substrate; a semiconductor layer disposed on the substrate; a source electrode and a drain electrode overlapping the semiconductor layer, and a gate electrode overlapping the semiconductor layer; and a first ohmic contact disposed between the semiconductor layer and the source electrode and a second ohmic contact disposed between the semiconductor layer and the drain electrode. The semiconductor layer includes a channel part that does not overlap the source electrode and the drain electrode. The first ohmic contact includes a first edge and the second ohmic contact includes a second edge. The first and second edges face each other across the channel part of the semiconductor layer. The first edge of the first ohmic contact is protruded from the source electrode toward the channel part and the second edge of the second ohmic contact is protruded from the drain electrode toward the channel part.

Abstract: In a transistor including an oxide semiconductor, a variation in electrical characteristics is suppressed and reliability is improved. A semiconductor device includes a transistor. The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, a second gate electrode over the second insulating film, and a third insulating film over the oxide semiconductor film and the second gate electrode. The oxide semiconductor film includes a channel region overlapping with the second gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The first gate electrode and the second gate electrode are electrically connected to each other.

Abstract: An electro-optical device including a pixel electrode provided over one side of a substrate, a conductive layer provided between the substrate and the pixel electrode, and a relay electrode provided between the substrate and the conductive layer. The conductive layer includes a first conduction section protruding toward the pixel electrode and a second conduction section protruding toward the relay electrode. The first conduction section is cylindrical-shape having an upper surface which is attached to the pixel electrode, and having a side surface sloping from the upper surface. The pixel electrode is electrically connected to the relay electrode through the conduction section.

Abstract: A thin film transistor substrate includes a gate electrode on a base substrate, an active pattern on the gate electrode, a source electrode on a first end of the active pattern, a drain electrode on a second end of the active pattern, an organic insulation layer on the source electrode and the drain electrode, and a transparent electrode contacting the drain electrode through a contact opening in the organic insulation layer. The drain electrode is spaced from the source electrode. The organic insulation layer includes a first thickness portion around the contact opening and a second thickness portion adjacent to the first thickness portion. The second thickness portion has a thickness greater than that of the first thickness portion.

Abstract: A first semiconductor layer is formed in the shape of an island in an active area displaying images on an array substrate. A second semiconductor layer is formed in the shape of an island outside the active area. A first insulating film covers the first and second semiconductor layers. A gate line is formed on the first insulating film and extends in a first direction. The gate line includes a gate electrode crossing the first semiconductor layer and a crossing portion crossing the second semiconductor layer. A second insulating film covers the gate line. A source line is formed on the second insulating film and extends in a second direction. The source line includes a source electrode contacting with the first semiconductor layer. A drain electrode is formed on the second insulating film apart from the source line and contacting with the first semiconductor layer.

Abstract: A pixel structure includes a substrate, a plurality of gate lines and data lines, and at least one first pixel. The gate lines and the data lines are disposed on the substrate. The first pixel is disposed on the substrate and electrically connected to corresponding gate line and data line. The first pixel includes a first electrode, a first dielectric layer and a second electrode. The first electrode is disposed on the substrate. The first dielectric layer is disposed on the first electrode, and the first dielectric layer has at least one first island structure. The second electrode is disposed on a top surface of the first island structure, and the second electrode partially exposes the top surface of the first island structure.

Abstract: In a TFT substrate, a common signal line is arranged on top of a common electrode and below a pixel electrode through intermediation of an insulating film. The metal piece in a pixel having a bright spot is irradiated with laser from the rear surface side of the TFT substrate. The common electrode and the pixel electrode are short-circuited by the melted metal piece.

Abstract: Disclosed are a liquid crystal display (LCD) device and a method of manufacturing the same, which can increase a transmittance of a high-resolution pixel. The LCD device includes a gate line formed to be shared by vertically adjacent first and second pixels, a data line formed to interest the gate line, first and second thin film transistors (TFTs) respectively formed in the first and second pixels, a passivation layer formed to cover the first and second TFTs, including a contact hole that exposes drains of the first and second TFTs, first and second pixel electrodes formed on the passivation layer and in the contact hole, and respectively connected to the drains of the first and second TFTs, and a common electrode formed under or on the first and second pixel electrodes.

Abstract: A liquid crystal display comprises two parallel spaced substrates and a liquid crystal layer with negative dielectric anisotropy interposed between the substrates. The ratio d/p, the cell gap d between the substrates to the pitch p of the liquid crystal layer, is equal to or less than 0.3, and the retardation value ?n*d may be in the range of 0.25-0.4. In absence of electric field, the liquid crystal molecules are arranged vertically to the substrates, and when the sufficient electric field is applied, the liquid crystal molecules are parallel to the substrates and twisted by 90° from one substrate to the other.

Abstract: The present invention provides an array substrate and a method for manufacturing the same, and a display device. In the method for manufacturing the array substrate, a one-time patterning process is employed to form a channel region, a source electrode and a drain electrode of the array substrate. Specifically, a channel region, a source region and a drain region that are consisted of a metal oxide layer are formed via a one-time patterning process, and a heat treatment is carried out on the metal oxide layer of the source region and the drain region in hydrogen gas, thereby forming a conducting source electrode and a conducting drain electrode, respectively. By the technical solution of the invention, the manufacturing process of the array substrate can be simplified, and the manufacturing cost of the array substrate can be lowered.

Abstract: In an aspect, an organic light emitting diode display including: a substrate; a first electrode and an auxiliary electrode positioned on the substrate and separated from each other; an absorption electrode positioned on the auxiliary electrode; an organic emission layer positioned on the first electrode and having a contact hole exposing the auxiliary electrode and the absorption electrode; and a second electrode positioned on the organic emission layer and connected to the auxiliary electrode and the absorption electrode through the contact hole is provided. In an aspect, the organic light emitting diode (OLED) display may minimize the voltage drop of the driving power passing through the large-sized electrode of the thin film for driving the organic emission layer, and may simplify the removal process of the organic emission layer on the auxiliary electrode by adding the absorption electrode on the auxiliary electrode.

Abstract: A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.

Abstract: A display panel includes a first substrate and a second substrate. The second substrate disposes opposite to the first substrate and has multiple data lines and multiple scan lines disposed as a matrix. The first substrate at least divides into a first region and a second region. The first region of the first substrate disposes correspondingly to the scan lines and/or data lines on the second substrate, and the second region of the first substrate is disposed correspondingly to a remaining region which is located outside the scan lines and/or data lines on the second substrate. The first region of the first substrate and the scan lines and/or data lines forms a non-capacitance or a low capacitance structure. Therefore, the present invention can reduce the capacitance generated by the scan lines and/or the data lines so as to reduce the signal delay.

Abstract: The embodiment of the invention discloses a liquid crystal display and a method of manufacturing the same. The liquid crystal display of the embodiment of the invention comprises an array substrate, a color filter substrate and a liquid crystal layer formed between the array substrate and the color filter substrate. The array substrate comprises a first substrate; a black matrix formed on the first substrate; and a thin film transistor (TFT) device formed on the black matrix. The TFT device is a top gate TFT device having a gate electrode formed on a side of the TFT device facing away the black matrix and an active layer made of a-Si. The color filter substrate comprises a second substrate; and a color filter layer formed on the second substrate. The color filter substrate does not include a black matrix.

Abstract: A liquid crystal display device includes a first substrate, a second substrate and a liquid crystal layer held therebetween. In the first substrate, first and second semiconductor layers are arranged apart from each other. A gate line is arranged on an insulating film extending in a first direction so as to cross the first semiconductor layer. A source line extends in a second direction and contacts the first semiconductor layer. A connection portion is arranged extending in the second direction for electrically coupling the first semiconductor layer and the second semiconductor layer. A main common electrode is arranged extending in the second direction so as to face the source line. A pixel electrode passes a region facing the connection portion and extending in the second direction so as to be apart from the main common electrode. The pixel electrode is electrically coupled to the connection portion.

Abstract: The present invention provides a liquid crystal display (LCD) panel. The LCD panel comprises a substrate, signal lines, test switches, at least one test line and a control line. The test switches are connected between the signal lines and the test line, and the at least one test line is configured to input test signals to the test switches, and the control line is configured to turn on the test switches. In the present invention, the test line is not required to be cut off by a laser, thereby improving a production capacity and a process yield of the LCD panel.

Abstract: The present invention relates to a thin film transistor substrate and method for fabricating the same which can secure an alignment margin and reduce the number of mask steps. A thin transistor substrate according to the present invention includes a gate line and a data line crossing each other to define a pixel, a gate metal pattern under the data line, a thin film transistor having a gate electrode, a source electrode and a drain electrode in the pixel, and a pixel electrode connected to the drain electrode of the thin film transistor by a connection electrode, wherein the data line has a plurality of first slits to disconnect the gate metal pattern from the gate line.

Abstract: A thin film transistor, a manufacturing method thereof, and a display device having the same are disclosed. The thin film transistor includes a semiconductor layer formed on a substrate, a gate insulating layer formed on the substrate including the semiconductor layer, a gate electrode formed on the gate insulating above the semiconductor layer, source and drain electrodes connected to the semiconductor layer, and 3.5 to 4.5 protrusions formed on the semiconductor layer overlapped with the gate electrode. Malfunction of the thin film transistor and inferior image quality of the display device can be prevented by adjusting the number of protrusions to minimize leakage current and defects.

Abstract: A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are spaced apart from each other and an outline of the source and drain electrodes is substantially same as an outline of the semiconductor pattern. The gate electrode is disposed in a region between the source and drain electrodes such that portions of the gate electrode are overlapped with the source and drain electrodes. Therefore, leakage current induced by light is minimized. As a result, characteristics of the thin-film transistor are enhanced, after-image is reduced to enhance display quality, and stability of manufacturing process is enhanced.

Abstract: A light-emitting device which includes a semiconductor layer; a first insulating layer over the semiconductor layer; a gate electrode and a first conductive layer over the first insulating layer; a second insulating layer over the gate electrode and the first conductive layer; source and drain electrodes and a second conductive layer over the second insulating layer; a third insulating layer over the source and drain electrodes and the second conductive layer; a first electrode and a third conductive layer over the third insulating layer; a planarization film covering an end portion of the first electrode; an electroluminescent layer over the first electrode; and a second electrode over the electroluminescent layer and the planarization film is provided. The second electrode is electrically connected to the third conductive layer through an opening portion provided in the planarization film. The opening portion overlaps with the first, second, and third conductive layers.

Abstract: The following semiconductor device provides high reliability and a narrower frame width. The semiconductor device includes a driver circuit and a pixel portion. The driver circuit has a first transistor including a first gate and a second gate electrically connected to each other with a semiconductor film sandwiched therebetween, and a second transistor electrically connected to the first transistor. The pixel portion includes a third transistor, a liquid crystal element, and a capacitor. The liquid crystal element includes a first transparent conductive film electrically connected to the third transistor, a second conductive film, and a liquid crystal layer. The capacitor includes the first conductive film, a third transparent conductive film, and a nitride insulating film. The nitride insulating film is positioned between the first transparent conductive film and the third transparent conductive film, and positioned between the semiconductor film and the second gate of the first transistor.

Abstract: A semiconductor device which includes an oxide semiconductor and in which formation of a parasitic channel due to a gate BT stress is suppressed is provided. Further, a semiconductor device including a transistor having excellent electrical characteristics is provided. The semiconductor device includes a transistor having a dual-gate structure in which an oxide semiconductor film is provided between a first gate electrode and a second gate electrode; gate insulating films are provided between the oxide semiconductor film and the first gate electrode and between the oxide semiconductor film and the second gate electrode; and in the channel width direction of the transistor, the first or second gate electrode faces a side surface of the oxide semiconductor film with the gate insulating film between the oxide semiconductor film and the first or second gate electrode.

Abstract: A method of manufacturing a thin film transistor liquid crystal display (TFT-LCD) array substrate including a gate line and a data line that define a pixel region, wherein the pixel region is provided with a thin film transistor, a pixel electrode formed on the array substrate, and a storage electrode of transparent structure that overlaps with the pixel electrode and, together with the pixel electrode, constitutes a storage capacitor.

Abstract: An array substrate for a liquid crystal display device and a fabrication method thereof, and a liquid crystal display device having the same are disclosed. The array substrate for a liquid crystal display device and a fabrication method thereof, and a liquid crystal display device having the same according to the present disclosure eliminate optical loss by use of a shielding film that can decrease the optic leakage current to minimize the optic leakage loss, thus it is possible to improve the picture quality.

Abstract: An object is to provide a semiconductor device having a novel structure which includes a combination of semiconductor elements with different characteristics and is capable of realizing higher integration. A semiconductor device includes a first transistor, which includes a first channel formation region including a first semiconductor material, and a first gate electrode, and a second transistor, which includes one of a second source electrode and a second drain electrode combined with the first gate electrode, and a second channel formation region including a second semiconductor material and electrically connected to the second source electrode and the second drain electrode.

Abstract: An array substrate comprises: a base substrate; a gate scanning line, a data scanning line, a pixel electrode and a thin film transistor, formed on the base substrate; and a light blocking layer, formed on the base substrate and corresponding to the thin film transistor and the data scanning line.

Abstract: According to an aspect, a liquid crystal display device includes: a first substrate on which a metallic layer and an insulating layer are laminated; a second substrate having a color filter and a protection layer laminated thereon; a liquid crystal; a seal material provided so as to seal the liquid crystal; a liquid crystal injection inlet formed on an outer circumference of the seal material; a first protrusion formed of at least one of the metallic layer and the insulating layer in the vicinity of each side of the liquid crystal injection inlet on the first substrate; and a second protrusion formed of at least one of the color filter and the protection layer on a position facing the first protrusion on the second substrate.

Abstract: According to an aspect of the present invention, there is provided a thin-film transistor (TFT) sensor, including a bottom gate electrode on a substrate, an insulation layer on the bottom gate electrode, an active layer in a donut shape on the insulation layer, the active layer including a channel through which a current generated by a charged body flows, an etch stop layer on the active layer, the etch stop layer including a first contact hole and a second contact hole, and a source electrode and a drain electrode burying the first and second contact holes, the source and drain electrodes being disposed on the etch stop layer so as to face each other.

Abstract: Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain electrodes (including a wiring formed using the same layer as the source and drain electrodes), a step of forming a contact hole (including the removal of an insulating layer and the like in a region other than the contact hole), and a step of forming a pixel electrode (including a wiring formed using the same layer as the pixel electrode). By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at low cost and high productivity. Formation of a parasitic channel is prevented by an improvement in shape and potential of a wiring.

Abstract: Provided are an organic light emitting display device and a method for manufacturing the same. The organic light emitting display device comprises a transistor on a substrate, a cathode on the transistor and connected to a source or a drain of the transistor, a bank layer on the cathode and having an opening, a metal buffer layer on the cathode, an organic light emitting layer on the metal buffer layer, and an anode on the organic light emitting layer.

Abstract: Conventionally, photolithography and anisotropic etching are performed to form a plug between an electrode and a wiring, etc., thereby increasing the number of steps, getting the throughput worse, and producing unnecessary materials. To solve the problems, the present invention provides a method for manufacturing a display device, including the formation steps of a conductive layer or wirings, and a contact plug that can treat a larger substrate. In the case of forming a plug for electrically connecting conductive patterns comprising plural layers, a pillar made of a conductor is formed over a base conductive layer pattern, and then, after an insulating film is formed over the entire surface, the insulating film is etched back to expose the conductor pillar, and a conductive pattern in an upper layer is formed by ink jetting. In this case, when the conductor pillar is processed, a resist to be a mask can be formed in itself by ink jetting.

Abstract: A thin film transistor array panel includes a source electrode and a drain electrode on an insulating substrate, an oxide semiconductor on the insulating substrate and overlapping the source electrode and the drain electrode, a passivation layer overlapping the oxide semiconductor and on the insulating substrate, a gate electrode on the passivation layer, and a pixel electrode connected to the drain electrode. The gate electrode and the pixel electrode include a same material. The oxide semiconductor is between the source electrode and the gate electrode, and between the drain electrode and the gate electrode in a cross-sectional view of the thin film transistor array panel.

Abstract: The present invention discloses an array substrate, preparation and driving methods thereof, a liquid crystal display panel and a display device, for reducing the drive voltage required by a liquid crystal display device, and increasing the light transmission rate. The array substrate comprises data lines and gate lines intersecting transversely and longitudinally to form a plurality of pixel units, each pixel unit comprising a pixel electrode and common electrodes, wherein the common electrodes include first common electrodes and second common electrodes; the first common electrodes, the second common electrodes and the pixel electrode are located in a same layer and do riot overlap with each other; and the first common electrodes and the second common electrodes are in strip patterns, and the first common electrodes, the pixel electrode and the second common electrode are spaced apart from each other.

Abstract: A liquid crystal display panel that includes a number of pixel electrodes formed on a substrate and are located in a pixel region defined by gate lines and data lines that cross the gate lines. Each of the pixel electrodes located in the pixel region includes a number of sides, and at least one of the sides includes oblique lines and a protrusion formed by the oblique lines, and the pixel electrodes located in the pixel region and adjacent to each other in a first direction form a separation space that includes at least one protrusion, and a width of the separation space gradually reduces and gradually increases in a second direction crossing the first direction, and a singular point that controls the texture of liquid crystals is located at the narrowest width of the separation space.

Abstract: Disclosed is a liquid crystal display device with a built-in touch screen, which facilitates enhanced driving performance, and reduces manufacturing cost by a simplified manufacturing process, and a method for manufacturing the same. The device comprises a first substrate with a plurality of pixel regions defined by gate lines and data lines; an active layer in each pixel region of the first substrate; a gate pattern including a plurality of gate electrodes, a portion of the gate electrodes overlapping with a predetermined portion of the active layer with an insulating layer interposed in-between; a plurality of channel regions in the areas of the active layer overlapped with the plurality of gate electrodes; a plurality of lightly doped drain regions in the active layer and directly adjacent to the plurality of channel regions; and a data electrode electrically connected to the active layer.

Abstract: Inspection pads are reduced when there is a need to input a plurality of control signals as inspection control signals. A display device includes: an integrated circuit; a first substrate on which a plurality of signal lines that respectively input the control signals to the integrated circuit, and an inspection pad are formed; and a driver circuit that that is mounted on the first substrate and connected to the plurality of signal lines. The plurality of signal lines include first and second signal lines adjacent to each other. The inspection pad is formed on the one signal line. The second signal line is connected to the inspection pad through a switch element. At the time of inspection, the switch element turns on, and the same control signal is input to the first and second signal lines from the inspection pad.

Abstract: A liquid crystal on silicon display device (LCOS) has a semiconductor substrate comprising a surface region and a gate dielectric layer overlying the surface region. The device also has a word line formed overlying the gate dielectric layer and a first source/drain region coupled to the word line. The device has a bottom electrode structure formed overlying an interlayer dielectric. A capacitor dielectric is formed overlying the bottom electrode. A top electrode structure is formed overlying the capacitor dielectric to form a capacitor structure including the bottom electrode structure, the capacitor dielectric, and the top electrode structure. The device has a mirror surface formed overlying the top electrode structure to form a pixel electrode structure and a liquid crystal material provided overlying the mirror surface. In an embodiment, the LCOS described above is in an integrated circuit chip that also includes a DRAM device.

Abstract: A method for fabricating is provided for a liquid crystal display device capable of decreasing the number of masks used to fabricate a thin film transistor (TFT) by forming an active pattern and a storage electrode by a single mask process, by simultaneously patterning a pixel electrode at the time of a gate line patterning, and by using only an organic insulation layer having a low dielectric constant.

Abstract: A thin film transistor including: an active layer formed on a substrate; a gate insulating layer pattern formed on a predetermined region of the active layer; a gate electrode formed on a predetermined region of the gate insulating layer pattern; an etching preventing layer pattern covering the gate insulating layer pattern and the gate electrode; and a source member and a drain member formed on the active layer and the etching preventing layer pattern.

Abstract: A display device includes a substrate; a display element; a thin film transistor, and having a first semiconductor oxide film including a source region and a drain region, the first semiconductor oxide film having first low resistance areas each of whose oxygen concentration is lower than that of the channel region in parts of the source region and the drain region in a depth direction from upper surfaces thereof; a second semiconductor oxide film having a second low resistance area whose oxygen concentration is lower than that of the channel region in a part in the depth direction from the upper surface; and a high resistance film covering the thin film transistor, the second semiconductor oxide film, and the substrate, made of a metallic oxide, having a first translucent area in an area contacting the first low resistance area, and having a second translucent area.

Abstract: An organic transistor array includes gate electrodes provided on a substrate, source and drain electrodes provided above or below the gate electrodes via a gate insulator layer, and an organic semiconductor layer opposing the gate electrodes via the gate insulator layer, and forming a channel region between mutually adjacent source and drain electrodes. The organic transistor array in a plan view is sectioned into sections each forming a single pixel, and each section has a closest packed structure.

Abstract: Disclination of an active matrix liquid crystal display device is reduced. Portions of pixel electrodes are formed so as to mutually overlap with a convex portion. If the height of the convex portion is too tall, the amount of light leakage increases due to liquid crystals orienting diagonally with respect to a substrate surface. (See FIG. 1C.) If the height of the convex portion is low, the disclination reduction effect is low. The optimal convex portion height is thus determined.

Abstract: There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated.

Abstract: A liquid crystal display (LCD) includes thin film transistors (TFTs) each having spaced apart source/drain electrodes and an oxide-type semiconductive film disposed over and between the source/drain electrodes to define an active layer. Each of the source/drain electrodes includes a portion of a subdivided transparent conductive layer where one subdivision of the transparent conductive layer continues from within its one of the source/drain electrodes to define an optically exposed pixel-electrode that is reliably connected integrally to the one source/drain electrode. Mass production costs can be reduced and production reliability increased because a fewer number of photolithographic masks can be used to form the TFTs.