Abstract: An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.

Abstract: Fringe field switching mode liquid crystal display (FFS LCD) devices are disclosed. A first substrate is disposed opposing a second substrate with a gap therebetween. A liquid crystal layer is interposed between the first and the second substrate. A gate line and data lines are formed on the first substrate in a matrix configuration and defining pixel areas. A counter electrode is disposed on each pixel area of the first substrate. A pixel electrode is disposed above the counter electrode with an insulating layer therebetween. The pixel electrode includes a plurality of parallel electrodes. Each electrode includes a first segment, a second segment, and a third segment, wherein the first segment has an included angle ? from the horizontal direction, the second segment has an included angle ? from the horizontal direction, and the first segment has an included angle ? from the horizontal direction.

Abstract: The present disclosure relates to a liquid crystal display device having a protection element for semiconductor layer from externally intruding light and a manufacturing method of the same. The present disclosure suggests a liquid crystal display device comprising a substrate; a data line and a gate line crossing each other on the substrate; a thin film transistor formed at a crossing portion of the data line and the gate line; a passivation layer covering the thin film transistor; and an opaque protective layer forming on the passivation layer and covering the thin film transistor. The liquid crystal display device according to the present disclosure blocks the light intrusion into the semiconductor active layer of the thin film transistor to enhance the electron mobility in the active layer and the reliability of the elements.

Abstract: A liquid crystal display includes an insulating substrate, a plurality of parallel gate lines disposed on the insulating substrate, and a plurality of data lines disposed on the insulating substrate. The data lines insulatingly intercross the gate lines. An intersection between two of the plurality of gate lines and a corresponding two of the plurality of data lines defines a pixel region. Each pixel region includes a first thin film transistor (TFT), a first pixel electrode, and a second pixel electrode. The first TFT includes a first gate electrode connected with the gate line, a first source electrode connected with the first pixel electrode, and a first drain electrode connected with the first pixel electrode. A voltage of the first pixel electrode is different from a voltage of the second pixel electrode.

Abstract: It is an object to provide a liquid crystal display device including a thin film transistor with high electric characteristics and high reliability. As for a liquid crystal display device including an inverted staggered thin film transistor of a channel stop type, the inverted staggered thin film transistor includes a gate electrode, a gate insulating film over the gate electrode, a microcrystalline semiconductor film including a channel formation region over the gate insulating film, a buffer layer over the microcrystalline semiconductor film, and a channel protective layer which is formed over the buffer layer so as to overlap with the channel formation region of the microcrystalline semiconductor film.

Abstract: A liquid crystal display device with a pair of substrates which are arranged to face each other with liquid crystal therebetween, columnar spacers having the substantially equal height formed on a liquid-crystal-side surface of one substrate, and the columnar spacers include the columnar spacer which is contact with a liquid-crystal-side surface of another substrate and the columnar spacer which is not contact with the liquid-crystal-side surface of another substrate.

Abstract: A novel structure of an active electro-optical device is disclosed. The device is provided with complementary thin film insulated gate field affect transistors (TFTs) therein which comprise a P-TFT and an N-TFT. P-TFT and N-TFT are connected to a common signal line by the gate electrodes thereof, while the source (or drain) electrodes thereof are connected to a common signal line as well as to one of the picture element electrodes. In case of driving the active electro-optical device, a gradation display can be carried out in a driving method having a display timing determined in relation to a time F for writing one screen and a time (t) for writing in one picture element, by applying a reference signal in a cycle of the time (t), to the signal line used for a certain picture element driving selection, and by applying the select signal to the other signal line at a certain timing within the time (t), and whereby setting the value of the voltage to be applied to a liquid crystal.

Abstract: An electro-optical device includes a switching element with a gate electrode provided opposite to the channel region. The gate electrode has a ring-shaped structure that surrounds a junction region between the channel region and a source/drain region.

Abstract: A display panel includes gate lines formed on a substrate, storage electrode lines formed on the substrate and being parallel to the gate lines, data lines insulated from the gate lines and crossing the gate lines, a plurality of thin film transistors (TFTs) connected with the gate lines and the data lines, and pixel electrodes having a first sub-electrode connected with a TFT and a second sub-electrode formed at a side opposite the first sub-electrode with respect to a gate line, wherein the TFT and a storage electrode line are disposed between the first and second sub-electrodes.

Abstract: A thin film transistor liquid crystal display (TFT-LCD) array substrate comprising a first gate line, a second gate line and a data line, which are formed on a substrate and define a pixel region, the first and second gate lines being parallel to each other, a pixel electrode, and a first thin film transistor (TFT) and a second TFT provided in the pixel region. The first TFT comprises a first gate electrode and a first drain electrode, the second TFT comprises a second gate electrode and a second drain electrode, and parasitic capacitance generated between the first drain electrode and the first gate electrode is equal to parasitic capacitance generated between the second drain electrode and the second gate electrode. Both the first drain electrode and the second drain electrode are connected with the pixel electrode.

Abstract: An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.

Abstract: A thin film transistor and a method of manufacturing the thin film transistor is disclosed. The thin film transistor includes first and second ohmic contact layers, an activation layer, an insulating layer, a source electrode formed on the insulating layer and connected to the first ohmic contact layer through first contact hole, a drain electrode formed on the insulating layer and connected to the second ohmic contact layer through second contact hole, a gate electrode formed on the insulating layer between the source electrode and the drain electrode and overlapping the activation layer, and a protective layer formed on the source electrode, the drain electrode, and the gate electrode.

Abstract: A transflective type LCD device includes a substrate having gate and data lines crossing each other to define pixel regions, a reflective part and a transmitting part in each pixel region, a pixel electrode in the reflective part and the transmitting part of the pixel region, a reflective electrode in the reflective part of the pixel region, a thin film transistor having source and drain regions at a crossing of the gate and data lines for transmitting a signal of the data line to the pixel electrode in accordance with a signal of the gate line, and an electrode electrically connecting the source region of the thin film transistor with a data electrode of the data line.

Abstract: Conventionally, photolithography and anisotropic etching are performed to form a plug between an electrode and a wiring, etc., thereby increasing the number of steps, getting the throughput worse, and producing unnecessary materials. To solve the problems, the present invention provides a method for manufacturing a display device, including the formation steps of a conductive layer or wirings, and a contact plug that can treat a larger substrate. In the case of forming a plug for electrically connecting conductive patterns comprising plural layers, a pillar made of a conductor is formed over a base conductive layer pattern, and then, after an insulating film is formed over the entire surface, the insulating film is etched back to expose the conductor pillar, and a conductive pattern in an upper layer is formed by ink jetting. In this case, when the conductor pillar is processed, a resist to be a mask can be formed in itself by ink jetting.

Abstract: A pixel structure of a liquid crystal display panel and the method thereof is provided. The gate electrode and data line of the pixel structure are formed by a first patterned conductive layer, the scan line is formed by a second patterned conductive layer, and the common electrode and the pixel electrode are formed on a substrate. The common electrode, the pixel electrode, and the insulating layer disposed therebetween compose a storage capacitor. Also, the pixel or the common electrode has a slit structure.

Abstract: A liquid crystal display device includes a first thin film transistor having an active layer, a gate electrode with a double conductive layer structure overlapping the active layer with a gate insulating film there between, a source electrode and a drain electrode connected to the active layer through first and second contact holes which penetrate an interlayer insulating film on the gate insulating film; a pixel electrode having a double layer structure, including a first transparent conductive layer and a second conductive layer, formed on the gate insulating film, wherein a portion of the first transparent conductive layer is exposed through a first transmission hole, which penetrates the interlayer insulating film; a luminescence layer on a portion of the pixel electrode; and a common electrode on the luminescence layer.

Abstract: There is provided a display device capable of automatically controlling a luminance in response to a brightness of a surrounding. The display device has a gamma correction circuit for converting an image signal voltage into a drive voltage for gray scale display and a photosensor for controlling an input and output voltage characteristic of the gamma correction circuit in response to the brightness of the surrounding. In this case, the gamma correction circuit for converting the image signal voltage into the driver voltage for gray scale display is formed on a first substrate. The photosensor for controlling the input and output voltage characteristic of the gamma correction circuit in response to the brightness of the surrounding is formed on a second substrate. The second substrate is fixed to the first substrate.

Abstract: An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode.

Abstract: An active matrix substrate has: scanning lines extending in row direction and image data lines extending in column direction, formed in display area; semiconductor islands at each cross point and in peripheral circuit area; a first gate insulating film formed on each pixel semiconductor island; a first gate made of a first wiring layer and formed on said first gate insulating film; a second gate insulating film thinner than the first gate insulating film formed on peripheral circuit semiconductor island; and a second gate electrode made of a second wiring layer and formed on the second gate insulating film, wherein the pixel transistor semiconductor island, first gate insulating film and first gate electrode constitute a pixel transistor, and the scanning line includes a lower layer made of the second wiring line and an upper layer made of the first wiring line connected to the lower layer.

Abstract: A method of fabricating a liquid crystal display device includes forming an active pattern and a data line on a substrate, forming a first insulating layer on the data line, forming a second insulating layer on the substrate, forming a gate electrode on the second insulating layer above the active pattern, forming a third insulating layer on the substrate, forming first and second contact holes through the second and third insulating layers to expose first and second portions of the active pattern, and forming a third contact hole through the first, second, and third insulating layers exposing a portion of the data line, respectively, and forming source and drain electrodes on the third insulating layer, the source electrode connected to the first exposed portion of the active pattern through the first contact hole and connected to the first exposed portion of the data line through the third contact hole, and the drain electrode connected to the second exposed portion of the active pattern through the second

Abstract: An object of the present invention is to provide a pixel structure capable of shielding light between a TFT and a pixel without using a light shielding mask (black matrix) in an electro-optical display device. The present invention has a feature in that, as one of means for shielding light, a lamination film consisting of two colored layers (a lamination layer of a red-colored layer and a blue-colored layer) is formed on an opposing substrate as a light shielding portion so as to overlap with a TFT formed on a device electrode.

Abstract: A liquid crystal display device comprises a liquid crystal panel including first and second substrates bonded to each other with a liquid crystal layer positioned therebetween, and the photosensor, formed on the second substrate, for sensing an external light from the surroundings, wherein the photosensor includes a semiconductor layer formed on the second substrate and provided with n+-type ion implantation region, ion non-implantation region and lightly doped region; an insulation film, formed on the second substrate, for covering the semiconductor layer; a passivation film, formed on the second substrate, for covering the insulation film; a first contact hole passing through the insulation film and the passivation film, to expose source and drain regions of the semiconductor layer; source and drain electrodes connected with the source and drain regions of the semiconductor layer through the first contact hole; an ion implanting prevention film formed on the insulation film and overlapped with the ion non-i

Abstract: An array substrate for a liquid crystal display device comprises a data line, source and drain electrodes disposed on a substrate; a pixel electrode disposed in a pixel region and contacting the drain electrode; an organic semiconductor layer disposed on the substrate; a gate insulating layer disposed on the substrate; a gate electrode disposed on the substrate; a first passivation layer of a photosensitive having a gate contact hole on the gate electrode, the gate contact hole exposing the gate electrode; and a gate line disposed on the first passivation layer, the gate line crossing the data line to define the pixel region and contacting the gate electrode through the gate contact hole, wherein the organic semiconductor layer, the gate insulating layer, and the gate electrode have a substantially same shape.

Abstract: A liquid crystal display apparatus includes pixel electrodes each supplied with a video signal from a drain bus line through a thin-film transistor driven by a scanning signal from a gate bus line. The pixel includes at least a light reflection film within its area, the light reflection film is flush with the drain bus line, having its surface formed with concave and convex ruggedness segments, the pixel electrode is formed on the top of an insulator film formed to cover the light reflection film and having its surface flattened or leveled and an electrode overlapping the light reflection film and insulated from the pixel electrode is intervened in the insulator film.

Abstract: A liquid crystal display according to an exemplary embodiment of the present invention includes a pixel electrode having first and second sub-pixel electrodes; a first thin film transistor connected to the first sub-pixel electrode; a second thin film transistor connected to the second sub-pixel electrode; a first data line connected to the first thin film transistor; a second data line connected to the second thin film transistor; a gate line connected to the first and second thin film transistors and crossing the first and second data lines; and a blocking member overlapping at least one portion of the first sub-pixel electrode.

Abstract: A pixel structure of a flat panel display for arrangement on a substrate. The pixel structure comprises a storage capacitor, a thin film transistor (TFT) and a data line formed on the substrate. The storage capacitor is disposed on the substrate, comprising a lower metal layer, an upper metal layer and a capacitor dielectric layer disposed therebetween. The TFT is disposed on the substrate and electrically connected to the storage capacitor, comprising an active layer, a gate electrode, and a gate dielectric layer disposed therebetween. The data line is disposed on the substrate, electrically connected to the thin film transistor and insulated from the substrate. The upper metal layer and the gate electrode are formed by the same metal layer and the lower metal layer and the data line are formed by the same metal layer. The invention also discloses a method for fabricating the pixel structure.

Abstract: A semiconductor device includes a control circuit for carrying out gamma correction of a supplied signal, and a memory for storing data used in the gamma correction. The control circuit and the memory are constituted by TFTs, and are integrally formed on the same insulating substrate. A semiconductor display device includes a pixel region in which a plurality of TFTs are arranged in matrix; a driver for switching the plurality of TFTs; a picture signal supply source for supplying a picture signal; a control circuit for carrying out gamma correction of the picture signal; and a memory for storing data used in the gamma correction of the picture signal. The plurality of TFTs, the driver, the control circuit, and the memory are integrally formed on the same insulating substrate.

Abstract: A TFT LCD array substrate and manufacturing method thereof are provided. In the TFT LCD array substrate, a part of the drain electrode of the thin film transistor that is connected with the pixel electrode is overlapped with the common electrode that is formed to increase the storage capacity for the respective pixel area. The TFT LCD of the present invention increases the aperture ratio of the pixel area.

Abstract: An electro-optical device comprising a display drive system with the display timing related to the unit time t for writing-in a picture element and to the time F for writing-in one picture is disclosed. In the device, a gradated display corresponding to the ratio of the division can be obtained by time-sharing the signal during a write-in of time t without changing the time F.

Abstract: An array substrate for a liquid crystal display device includes a substrate including a first driving region, a second driving region, and a pixel region, the pixel region including a switching region and a storage region; a first n-type transistor in the first driving region, a second p-type transistor in the second driving region; a third transistor in the switching region, the third transistor including a gate electrode, an active layer, a source electrode, and a drain electrode; an extension portion in the storage region and extending from the active layer; a metal pattern on the extension portion; a storage line over the metal pattern; and a pixel electrode in the pixel region and contacting the third transistor, wherein the metal pattern, the storage line and the pixel electrode form first, second and third electrodes of a storage capacitor that includes a first capacitor and a second capacitor parallel to each other.

Abstract: A method for fabricating an LCD device includes providing a substrate; forming an active pattern having a source region, a drain region and a channel region on the substrate; forming a first insulation film on the substrate; forming a gate electrode, a gate line and a pixel electrode on the substrate; forming a second insulation film on the substrate; forming a contact hole exposing a portion of the source and drain regions by removing a portion of the first and second insulation films; patterning the second insulation film on the pixel electrode at least a size corresponding to a form of the pixel electrode; and forming a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region through the contact hole.

Abstract: An array substrate for a liquid crystal display device includes a gate and a data lines on a substrate intersecting each other, the data line includes a first layer formed of a transparent conductive material and a second layer under the first layer; a thin film transistor including a gate electrode connected to the gate line formed at respective intersection of the gate and data lines, an insulating layer on the gate electrode, an active layer on the insulating layer disposed within the gate electrode, an etch stopper on the active layer, an ohmic contact layer on the etch stopper, a source electrode on the ohmic contact layer and connected to the first layer, a drain electrode spaced apart from the source electrode; a pixel electrode connected to the drain electrode, wherein the source, drain and pixel electrodes are formed of the same layer and material as the first layer.

Abstract: A liquid crystal display device with a liquid crystal material layer (414) includes a common electrode layer (406) proximate the liquid crystal material layer (414), a patterned metal oxide layer (408) arranged opposite the common electrode layer (406), where the liquid crystal material layer (414) is arranged between the common electrode layer (406) and the patterned metal oxide layer (408). The liquid crystal display device includes a thin, optically clear insulating coating (410) applied to a surface of the patterned metal oxide (408), and a patterned metal oxide mask (412) applied to a surface of the optically clear dielectric coating (410), where the patterned metal oxide mask (412) is electrically coupled to the common electrode layer (406). The liquid crystal display device controls where the electrical field is seen by the liquid crystal material by creating intentional shorts across it where it is not intended to switch.

Abstract: A wiring layer includes a signal line and covers a predetermined portion on a source region and a drain region of a crystalline silicon layer. A gate insulating layer is on the crystalline silicon layer and the wiring layer. A gate electrode layer above the gate insulating layer includes a scanning line, a gate electrode corresponding to a channel region of the crystalline silicon layer, and a capacitor electrode corresponding to a predetermined portion of the wiring layer. The capacitor electrode is formed separately from the scanning line and the gate electrode and is configured to form a capacitor with the wiring layer. An interlayer insulating film is on the gate electrode layer and the gate insulating layer. A pixel electrode layer on the interlayer insulating film includes a pixel electrode connected to the wiring layer through a contact hole in the gate insulating layer and the interlayer insulating film.

Abstract: Each Multi-domain Vertical Alignment (MVA) pixel structures on a display panel array includes at least two sub-pixels. By adjusting the channel W/L ratios of the transistors in the sub-pixels, the sub-pixels may have different display voltages so as to improve the display quality in a slant vision. A transistor is disposed between one of the sub-pixels and a common line (Vcs) as the dispersion path for remaining electric charges to improve the condition of burn-in.

Abstract: A liquid crystal layer is provided between a pair of substrates, one of the pair of substrates is provided with a pixel region including a TFT and a light shielding layer in which an opening portion is formed, a semiconductor layer composing the TFT is overlapped with the light shielding layer and formed along one side of the opening portion, and an alignment of a liquid crystal molecule is controlled such that light which transmits through the liquid crystal layer is incident as polarized light perpendicular to the one side of the opening portion. The liquid crystal layer is particularly made of more a TN mode liquid crystal.

Abstract: Five photomasks are used in fabricating the pixel structure of an LCD. In this pixel structure, a metal light-shielding layer is formed under the thin film transistor to reduce photocurrent. Furthermore, a metal conductive wire is used to increase the storage capacity of the storage capacitor.

Abstract: To provide a technology for fabricating a high image quality liquid crystal display device, a set range of a cell gap for holding a liquid crystal layer is limited in accordance with a distance of a pixel pitch in which specifically, the cell gap is set to be a distance of one tenth of the pixel pitch, whereby the high image quality liquid crystal display device with no occurrence of image display failure caused by disturbances of an electric field such as disclination, can be realized.

Abstract: An exemplary liquid crystal display (100) includes gate lines (122), and data lines (123) cooperatively defining pixel units. Each pixel unit includes a first thin film transistor (TFT) (125), a second TFT (126), a first pixel electrode (127), and a second pixel electrode (128). Gate electrodes of the two TFTs are connected to one of the gate lines. A source electrode of the first TFT is connected to one of the data lines. A drain electrode of the first TFT is connected to the first pixel electrode. A source electrode of the second TFT is connected to the first pixel electrode. A drain electrode of the second TFT is connected to the second pixel electrode. A channel width/length ratio of the second TFT is such that a voltage of the drain electrode thereof is less than a voltage of the source electrode thereof when the second TFT is switched on.

Abstract: A pixel circuit substrate includes a first interlayer insulating film which is made of an inorganic material at least in a source and drain regions of a thin film transistor. A contact hole is formed in an area above the source and drain regions of a thin film transistor in the first interlayer insulating film. A wiring layer is formed on the first interlayer insulating film, extends to an inner wall and a bottom surface of the contact hole. On a top surface of the wiring layer is formed a recess reflecting the shape of a contact hole. A second interlayer insulating film is formed on the wiring layer, embedded in the recess and has a flat top surface in an area above the thin film transistor. A storage capacitor on the second interlayer insulating film is disposed in the area above the thin film transistor.

Abstract: Fringe field switching mode liquid crystal display (FFS LCD) devices are disclosed. A first substrate is disposed opposing a second substrate with a gap therebetween. A liquid crystal layer is interposed between the first and the second substrate. A gate line and data lines are formed on the first substrate in a matrix configuration and defining pixel areas. A counter electrode is disposed on each pixel area of the first substrate. A pixel electrode is disposed above the counter electrode with an insulating layer therebetween. The pixel electrode includes a plurality of parallel electrodes. Each electrode includes a first segment, a second segment, and a third segment, wherein the first segment has an included angle ? from the horizontal direction, the second segment has an included angle ? from the horizontal direction, and the first segment has an included angle ? from the horizontal direction.

Abstract: A pixel structure of a flat panel display for arrangement on a substrate. The pixel structure comprises a storage capacitor, a thin film transistor (TFT) and a data line formed on the substrate. The storage capacitor is disposed on the substrate, comprising a lower metal layer, an upper metal layer and a capacitor dielectric layer disposed therebetween. The TFT is disposed on the substrate and electrically connected to the storage capacitor, comprising an active layer, a gate electrode, and a gate dielectric layer disposed therebetween. The data line is disposed on the substrate, electrically connected to the thin film transistor and insulated from the substrate. The upper metal layer and the gate electrode are formed by the same metal layer and the lower metal layer and the data line are formed by the same metal layer. The invention also discloses a method for fabricating the pixel structure.

Abstract: A method for fabricating an LCD device comprising: providing first and second substrates; forming an active area having a source region, a drain region, a channel region, and a storage region on the first substrate; forming a first insulation film on the first substrate; forming a gate electrode, a gate line and a pixel electrode on the first substrate and forming a storage line partially overlapping with the storage region; forming a second insulation film on the first substrate; forming first and second contact holes exposing a portion of the source and drain regions by removing a portion of the first and second insulation films and exposing the pixel electrode by removing the second insulation film on the pixel electrode; and forming a source electrode electrically connected to the source region through the first contact hole and forming a drain electrode electrically connected to the drain region through the second contact hole and partially overlapping with the storage line.

Abstract: Disclination of an active matrix liquid crystal display device is reduced. Portions of pixel electrodes are formed so as to mutually overlap with a convex portion. If the height of the convex portion is too tall, the amount of light leakage increases due to liquid crystals orienting diagonally with respect to a substrate surface. (See FIG. 1C.) If the height of the convex portion is low, the disclination reduction effect is low. The optimal convex portion height is thus determined.

Abstract: To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

Abstract: An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode.

Abstract: A liquid crystal display panel 10A of the invention has gate electrodes G of TFTs, scan lines 16, and auxiliary capacitor electrodes 18a, which are coated with a first insulating film 27 composed of a thick insulating layer 25 and thinned insulating layer 26. A part above the auxiliary capacitor electrodes 18a is coated only with the thinned insulating layer 26, and drain electrodes D are extended on the first insulating film 27, which is not thinned, so as to coat the thinned insulating layer 26. On a second insulating film 28 provided between the pixel electrodes 20 and the drain electrodes D, contact holes 30 are formed at portions above the drain electrodes D on the first insulating film 27, which is not thinned, above the auxiliary capacitor electrodes 18a, and via the contact holes 30, the pixels 20 and the drain electrodes D are electrically coupled to each other.

Abstract: An organic thin film transistor (OTFT) array panel includes a substrate, a data line formed on the substrate, a source electrode connected with the data line, a drain electrode, including a portion facing the source electrode, an insulating layer formed on the source electrode and the drain electrode and having an opening and a contact hole, an organic semiconductor positioned in the opening and at least partially contacting the source electrode and the drain electrode, a gate insulator formed on the organic semiconductor, a stopper formed on the gate insulator, a gate line crossing over the data line and including a gate electrode formed on the stopper, and a pixel electrode connected to the drain electrode through the contact hole.

Abstract: Pixel structures of a color filter substrate, an active device array substrate and a liquid crystal display panel are provided. The pixel structure of the color filter substrate includes a first and second electrode patterns electrically connected to different voltage input terminals. The pixel structure of the active device array substrate includes a first and second pixel electrodes, a first and second gate-drain capacitances and a first and second storage capacitances. The areas of the first and the second pixel electrodes are different, the first and the second gate-drain capacitances are different, and the first and the second storage capacitances are different. In addition, the pixel structure of the liquid crystal display panel includes the pixel structure of the color filter substrate the pixel structure, the active device array substrate and a liquid crystal layer therebetween.

Abstract: A TFT substrate having a storage capacitor with an increased capacitance and aperture ratio, and a simplified method of fabricating the same, includes gate and data lines crossing each other to define pixel areas; a gate insulating film between the gate and data lines; TFTs connected to the gate and data lines; a semiconductor pattern defining a channel of the TFTs and overlapped by the data lines; a passivation film covering the data lines and the TFTs; and at least one pixel electrode connected to a TFT and provided within a pixel hole that is arranged within a pixel area. The pixel hole is formed through the passivation film and partially through the gate insulating film. Further, a storage capacitor includes a portion of the pixel electrode that overlaps with an underlying gate line with a portion of the gate insulating film that defines the pixel hole.