Abstract: A flexible display device including a substrate having an active region in which an input image is implemented and a bezel region outside the active region; a signal line (or an electrode) extending from the bezel region and transmitting a signal (or a voltage) to the active region; and a first bypass line provided above or below the signal line with one or more insulating layers interposed therebetween in the bezel region, wherein the first bypass line is connected to the signal line via a first bypass contact hole penetrating through the one or more insulating layers and receives the same signal as that of the signal line, and wherein the first bypass contact hole is provided as at least two bypass contact holes.

Abstract: A display device includes a substrate, a plurality of first layered link lines spaced apart from each other on the substrate, a first insulating layer on the plurality of first layered link lines, a plurality of second layered link lines spaced apart from each other on the first insulating layer, each second layered link line between neighboring first layered link lines, a second insulating layer on the plurality of second layered link lines, and a plurality of data lines or a plurality of gate lines connected to the plurality of first layered link lines and the plurality of second layered link lines.

Abstract: An array substrate and a display device are provided. The array substrate comprises: a plurality of gate lines arranged in parallel, a plurality of common electrode lines and a common electrode signal line which is disposed in a non-display region on the array substrate. Each of the gate lines corresponds to one common electrode line. Each of the common electrode lines is electrically connected with the common electrode signal line through a corresponding signal line through-hole region. The signal line through-hole region is provided with at least one identification through hole, the signal line through-hole region is configured for indicating a number according to a position of the identification through hole. The array substrate can reduce the frame width of the display device.

Abstract: A thin film transistor (TFT) that includes a control electrode, a semiconductor pattern, a first input electrode, a second input electrode, and an output electrode is disclosed. in one aspect, the semiconductor pattern includes a first input area, a second input area, a channel area, and an output area. The channel area is formed between the first input area and the output area and overlapped with the control electrode to be insulated from the control electrode. The second input area is formed between the first input area and the channel area and doped with a doping concentration different from a doping concentration of the first input areas. The second input electrode makes contact with the second input area and receives a control voltage to control a threshold voltage.

Abstract: The present invention provides an organic light emitting diode touch display panel including a substrate, a plurality of first electrodes and a plurality of second electrodes disposed on the substrate, a plurality of light emitting layers, a plurality of dielectric layers, a plurality of first electrode stripes, and a plurality of second stripes. Each light emitting layer is disposed on each first electrode, and each dielectric layer is disposed on each second electrode. Each first electrode stripe is disposed on the light emitting layers in each row, and each second electrode stripe is disposed on the dielectric layers in each row. Each first electrode, each light emitting layer and each first electrode stripe form an organic light emitting diode, and each second electrode, each dielectric layer and each second electrode stripe form a touch sensing capacitor.

Abstract: An insulating film provided between adjacent pixels is referred to as a bank, a partition, a barrier, an embankment or the like, and is provided above a source wiring or a drain wiring for a thin film transistor, or a power supply line. In particular, at an intersection portion of these wirings provided in different layers, a larger step is formed there than in other portions. Even in a case that the insulating film provided between adjacent pixels is formed by a coating method, there is a problem that thin portions are partially formed due to this step and the withstand pressure is reduced. In the present invention, a dummy material is arranged near the large step portion, particularly, around the intersection portion of wirings, so as to alleviate unevenness formed thereover. The upper wring and the lower wiring are arranged in a misaligned manner so as not to align the end portions.

Abstract: A method of fabricating a thin film pattern according to an embodiment of the present invention comprises forming an organic material pattern on a substrate, forming a metal material of liquid phase on a substrate provided with the organic material pattern, hardening the metal material of liquid phase, and removing the metal material located on the organic material pattern, allowing some metal material to be left at an area non-overlapped with the organic material pattern.

Abstract: To reduce power consumption and suppress display degradation of a liquid crystal display device. To suppress display degradation due to an external factor such as temperature. A transistor whose channel formation region is formed using an oxide semiconductor layer is used for a transistor provided in each pixel. Note that with the use of a high-purity oxide semiconductor layer, off-state current of the transistor at a room temperature can be 10 aA/?m or less and off-state current at 85° C. can be 100 aA/?m or less. Consequently, power consumption of a liquid crystal display device can be reduced and display degradation can be suppressed. Further, as described above, off-state current of the transistor at a temperature as high as 85° C. can be 100 aA/?m or less. Thus, display degradation of a liquid crystal display device due to an external factor such as temperature can be suppressed.

Abstract: A liquid crystal display includes a first substrate and a second substrate which face each other and each include a display area and a peripheral area, a liquid crystal layer in the display areas and between the first substrate and the second substrate, and a conductive sealant combining the first substrate and the second substrate. The first substrate includes a common electrode in the display and peripheral areas of the first substrate. The second substrate includes a first and signal lines in the peripheral area of the second substrate, a first insulating layer on the first signal line and the second signal line, and a conductor on the first insulating layer in the peripheral area and connected to the first signal line through a contact hole. The common electrode includes a cutout corresponding to the conductor, and the cutout is at a corner of the display areas.

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

Abstract: A display device includes a first light-emitting element which includes a second layer having the function of flowing carriers and provided between a first anode and a first layer having the function of emitting light of a first color, and a third layer having the function of emitting light of a second color and provided between the first anode and the second layer; and a second light-emitting element which includes a fifth layer having the function of suppressing a flow of carriers and provided between a second anode and a fourth layer having the function of emitting light of the first color, and a first hole injection layer provided between the second anode and the fifth layer.

Abstract: A liquid crystal display device comprises: a first substrate and a second substrate facing and spaced apart from each other, the first substrate and the second substrate including an active area, a signal input area and a pad area, the signal input area and the pad area being disposed at a periphery of the active area; a gate line and a data line on the first substrate in the active area, the gate line and the data line crossing each other; first connection lines and second connection lines in the signal input area, the first connection lines extending to the pad area and crossing the second connection lines; a gate connection pattern contacting the first connection lines and the second connection lines; a common electrode on the second substrate; a shortage-preventing pattern on the common electrode and corresponding to the gate connection pattern; a seal pattern surrounding the active area, the seal pattern including a conductive ball; and a liquid crystal layer between the first and second substrates in th

Abstract: A thin film transistor (TFT) liquid crystal display panel and fabrication method are described. The panel has a data line and a gate line connected with a TFT and formed on the same layer. One of data or gate lines is discontinuous and the other is continuous in a pixel region such that the continuous line bisects the discontinuous line. A passivation film protects the TFT. Contact holes penetrate the passivation film and expose segments of the discontinuous line. A contact electrode connects the segments through the contact holes.

Abstract: Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith.

Abstract: A silicon light-emitting element includes a first conductivity type silicon substrate 10 having a first surface 10a and a second surface 10b on a side opposite to the first surface 10a, an insulating film 11 provided on the first surface 10a of the silicon substrate 10, a silicon layer 12 provided on the insulating film 11, and having a second conductivity type different from the first conductivity type, a first electrode 13 provided on the silicon layer 12, and a second electrode 14 provided on the second surface of the silicon substrate, and the silicon substrate 10 has a carrier concentration of 5×1015cm?3 to 5×1018cm?3, the silicon layer 12 has a carrier concentration of 1×1017cm?3 to 5×1019cm?3, and that is larger by one digit or more than the carrier concentration of the silicon substrate 10, and the insulating film 11 has a film thickness of 0.3 nm to 5 nm. Accordingly, a silicon light-emitting element that is applicable to a silicon photonics light source is realized.

Abstract: A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH3, N2, and SiH4, and H2 gas or a mixture of H2 and He. The first region is deposited by setting the flow-rate ratio NH3/SiH4 in a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH3/SiH4 to be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.

Abstract: A display is disclosed. The display includes a plurality of pixels configured to emit light. The display also includes a plurality of pixel control circuits that are each configured to regulate emission of light from a pixel. The pixel control circuits each include one or more two-terminal switching devices that include an organic semiconductor.

Abstract: A LOG-type liquid crystal display panel and a fabricating method thereof that reduces a line resistance of a LOG-type signal line group within the confined area. In the panel, a picture display part has a plurality of liquid crystal cells, each of which is arranged at each crossing area between gate lines and data lines. Line on glass type signal lines are provided at an outer area of the picture display part by a line on glass system to apply driving signals required for driver integrated circuits for driving the gate lines and the data lines and to connect the driver integrated circuits to each other. The line on glass type signal lines are separately provided at different metal layers having an insulating film therebetween.

Abstract: Disclosed is a LCD device having a structure capable of improving the quality of images is disclosed. The LCD device includes, an image display portion composed of pixels, the image display portion defined by the crossing of gate wires and data wires; a common wire located on the outside of the image display portion; a test wire located adjacent to a part of the common wire; and a wire connection electrode for connecting the common wire with the test wire.

Abstract: An electro-optic apparatus includes an electro-optic panel, a wiring board, and an integrated circuit unit. The integrated circuit unit including a heat radiating member arranged so as to overlap at least partly with the integrated circuit unit.

Abstract: In a specific embodiment, the present invention provides an LCOS device. The device has a semiconductor substrate, e.g., silicon substrate. The device has a transistor formed within the semiconductor substrate. The transistor has a first node, a second node, and a row node. A first capacitor structure is coupled to the transistor. The first capacitor structure includes a first polysilicon layer coupled to the second node of the transistor. The first capacitor structure also has a first capacitor insulating layer overlying the first polysilicon layer and a second polysilicon layer overlying the insulating layer. The second polysilicon layer is coupled to a reference potential, e.g., ground. The device has a second capacitor structure coupled to the transistor. The second capacitor structure has a first metal layer coupled to the reference potential, a second capacitor insulating layer, and a second metal layer coupled to the second node of the transistor. A pixel electrode comprises the first metal layer.

Abstract: A transflective diode substrate for a liquid crystal display device, includes: a reflective zone including a diode having a scan electrode, an insulating pattern on the scan electrode and a pixel electrode over the scan electrode, organic patterns around the diode, and a reflection electrode over the organic patterns; and a transmissive zone adjacent to the reflective zone; wherein the pixel electrode is formed in the reflective zone and the transmissive zone.

Abstract: A liquid crystal display device includes first and second opposed facing substrates and liquid crystal sandwiched therebetween. The first substrate includes a thin film transistor having a first electrode thereof connected to a video signal line and a second electrode thereof connected to a pixel electrode, a first silicon nitride film, an organic insulation film, a capacitance electrode, and a second silicon nitride film. The second silicon nitride film is formed at a temperature lower than a forming temperature of the first silicon nitride film. The second electrode and the pixel electrode are connected to each other via a contact hole formed by the first and second silicon nitride films. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

Abstract: A method for manufacturing a liquid crystal display device is disclosed, comprising the following steps: (a) providing a substrate having a transparent electrode layer and a first metal layer, wherein the transparent electrode layer is sandwiched in between the first metal layer and the substrate; (b) defining a patterned area having a thin film diode area and a pixel area by a first mask; (c) forming a first insulating layer and a second metal layer on the patterned area having the thin film diode area and the pixel area in sequence, wherein the first insulating layer is sandwiched in between the second metal layer and the first metal layer; and (d) defining the thin film diode area and the pixel area by a second mask, and removing the second metal layer, the first insulating layer, and the first metal layer on the pixel area to expose the transparent electrode layer.

Abstract: Active devices in a thin film diode (TFD) liquid crystal display (LCD) panel used to control liquid crystal are formed by a metal layer, a transparent conductive layer, and an insulating layer sequentially on a substrate, wherein the metal layer is used as transmitting signal and the transparent conductive layer is used as bottom metal layer of metal-insulator-metal (MIM) thin film diode. The metal layer, the transparent conductive layer, and the insulating layer are defined with desired patterns. Further, a dielectric layer is formed over the substrate, metal layer, the transparent conductive layer, and the insulating layer, and defined to form the locations of electrode terminal and MIM thin film diode by using lithographic process. Next, another transparent conductive layer is formed on the dielectric layer and defined to form a pixel electrode and top metal layer of the MIM thin film diode by using lithographic process.

Abstract: A display is disclosed. The display includes a plurality of pixels configured to emit light. The display also includes a plurality of pixel control circuits that are each configured to regulate emission of light from a pixel. The pixel control circuits each include one or more two-terminal switching devices that include an organic semiconductor.

Abstract: A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate line, a gate pad and a gate electrode on a substrate through a first mask process, forming a data line, a data pad, a source electrode, a drain electrode and an active layer on the substrate including the gate line, the gate pad and the gate electrode through a second mask process, wherein the data line crosses the gate line to define a pixel region, the source electrode is extended from the data line, the drain electrode is spaced apart from the source electrode, and the active layer is disposed between the gate electrode and the source and drain electrodes, forming a passivation layer on an entire surface of the substrate including the data line, the source electrode and the drain electrode through a third mask process, the passivation layer being etched to expose the substrate in the pixel region, a part of the drain electrode, the gate pad and the data pad, and forming a pixel electrode, a gate pad ter

Abstract: A thin film diode panel comprises a pixel electrode formed on a substrate, the pixel electrode including a stem portion and a plurality of branch portions extended from the stem portion, and a data electrode line formed on the substrate, the data electrode line including a plurality of branch electrodes formed parallel to the plurality of branch portions. The plurality of branch portions may extend in a direction perpendicular to the stem portion and the plurality of branch electrodes may extend in a direction perpendicular to the data electrode line.

Abstract: Active devices in a thin film diode (TFD) liquid crystal display (LCD) panel used to control liquid crystal are formed by a metal layer, a transparent conductive layer, and an insulating layer sequentially on a substrate, wherein the metal layer is used as transmitting signal and the transparent conductive layer is used as bottom metal layer of metal-insulator-metal (MIM) thin film diode. The metal layer, the transparent conductive layer, and the insulating layer are defined with desired patterns. Further, a dielectric layer is formed over the substrate, metal layer, the transparent conductive layer, and the insulating layer, and defined to form the locations of electrode terminal and MIM thin film diode by using lithographic process. Next, another transparent conductive layer is formed on the dielectric layer and defined to form a pixel electrode and top metal layer of the MIM thin film diode by using lithographic process.

Abstract: A method of manufacturing a thin film transistor array panel is provided, the method includes: a substrate; a data line disposed on the substrate; an interlayer insulating layer disposed on the data line; a gate line disposed on the interlayer insulating layer and including a gate electrode; a gate insulating layer disposed on the gate line and the interlayer insulating layer, the gate insulating layer and the interlayer insulating film having a contact hole exposing the data line; a first electrode disposed on the gate insulating layer and connected to the data line through the contact hole; a second electrode disposed opposite the first electrode with respect to the gate electrode; an organic semiconductor disposed on the first and the second electrodes and contacting the first and the second electrodes; and a passivation member disposed on the organic semiconductor.

Abstract: To solve a problem of increased power consumption power due to wiring capacitances, which occurs when connecting onto a display substrate a substrate on which a memory, a memory controller, and the like are formed. The memory, the memory controller, and the like are integrally formed on the display substrate. At this time, these circuits are formed using a dual gate TFT. Thus, a display device in which wiring capacitances of connection portions between driver circuits composing a display and the memory controller and the like are reduced and which has thus low power consumption can be provided.

Abstract: An illumination device and display device using it display motion pictures without a blur and make a light utilizing efficiency of a backlight improved. An illumination device having a light pipe of a substantially parallel flat-form sheet, whose one surface is an outgoing light surface and a light source unit is placed at one side and both side edges, is equipped with a light axis of lights after having entered the light pipe from the light source unit being unparallel to the outgoing light surface of the light pipe, and a reflection body unit consisting of plural unit reflection bodies divided into m in a vertical direction of the light source unit at an opposite side surface of the outgoing light surface of the light pipe, wherein the reflection body unit can contact and separate from the opposite side surface the outgoing light surface of the light pipe for every unit reflection bodies.

Abstract: A liquid crystal display is provided, which includes: a pair of first and second signal lines transmitting select pulses having opposite polarity; a third signal line transmitting data voltages; first and second field generating electrodes separated from each other with a gap; and a plurality of diodes connected between the first and the second signal lines and the first and the second field generating electrodes and providing at least two different resistances.

Abstract: A wiring structure includes: a plurality of linear conductors extending generally parallel to one another; a first input terminal for inputting an electrical signal to a first group of linear conductors selected from among the plurality of linear conductors; and a second input terminal for inputting an electrical signal to a second group of linear conductors, different conductors, selected from among the plurality of linear conductors, the second input terminal being adjacent to the first input terminal. A plurality of the linear conductors are present between the first group of linear conductors and the second group of linear conductors.

Abstract: A substrate for a LCD device improves the flatness of the outermost substrate surface in the contact region for interconnecting an electrode of a switching element (e.g., a TFT) and a pixel electrode to each other in each pixel. Switching elements for respective pixels are formed on a transparent plate. Protrusions for the respective pixels are formed on the plate to protrude to a vicinity of an outermost surface of the substrate. Each protrusion raises an electrode of a corresponding switching element to the vicinity of the outermost surface in the corresponding pixel. A planarization layer forming the outermost surface is formed to cover the switching elements, the protrusions, and the electrodes of the elements in all the pixels. Pixel electrodes for the respective pixels are formed on the outermost surface. Each pixel electrode contacts the corresponding electrode of the element in the vicinity of the outermost surface.

Abstract: An active matrix display device includes a pair of substrates, an optical modulation layer lying between the substrates, a plurality of pixel electrodes on one of the substrates, switching elements for driving the respective pixel electrodes provided in the vicinity of the pixel electrodes, and a reflective or transflective reflecting layer 138 formed on at least one substrate more distant from a viewer side. The reflecting layer has asymmetrical reflection properties.

Abstract: There is provided a liquid crystal display device comprising a plurality of pixels arranged in a matrix form, each of the pixels including a pixel electrode formation area wherein a pixel electrode is formed and a thin film transistor formation area wherein a thin film transistor is formed and connected to the pixel electrode. The thin film transistor having a semiconductor layer serving as a channel, a terminal formed to be connected to the pixel electrode, a passivation layer formed to cover the thin film transistor and an organic insulating layer covering the passivation layer. The semiconductor layer is extended from a channel toward the pixel electrode formation area beyond the terminal and terminated in the pixel electrode formation area to form a termination end that is aligned with a termination end of the passivation layer. The organic insulating layer is elongated to cover the termination ends of the semiconductor layer and the passivation layer.

Abstract: The present invention provides a method of manufacturing a nonlinear element capable further improving nonlinearity of a nonlinear element, an electrooptic device, and electronic apparatus. In forming an element substrate of a liquid crystal device, an underlying layer is formed on the surface of the element substrate in the underlying layer forming step (a), and then a first metal film having a metal film containing at least Ta is formed in the first metal film forming step (b). Then, in the insulating film forming step (c), the first metal film is annealed under high pressure in an atmosphere containing water vapor to form an insulating film on the first metal film. Then, in the second metal film forming step, a second metal film is formed on the surface of the insulating film to produce a nonlinear element.

Abstract: The present invention provides a MIM type non-linear element in which the capacitance is sufficiently small and in which little changes over time are exhibited in the current-voltage characteristics, a liquid crystal display panel with high image quality using the MIM type non-linear element, and a method of manufacturing the MIM type non-linear element. The MIM type non-linear element includes a first conductive film, an insulation film and a second conductive film, which are laminated on a substrate. The insulation film has a relative dielectric constant of 25.5 or less, preferably 24.0-25.5. In elementary analysis by SIMS, a hydrogen spectrum of the boundary region between the first conductive film and the insulation film has a width of 10 nm or more in the depth direction at an intensity of one tenth of the peak intensity. The first conductive film of the MIM type non-linear element shows a peak temperature of 300° C. or higher in a thermal desorption spectroscopy of hydrogen.

Abstract: The present invention relates to an identification mark portion and fabricating method thereof, more particularly, to an identification mark portion introduced in a liquid crystal display panel and a fabricating method thereof, which minimizes the error in verifying an ID of a pad by preventing at least two insulating layers from overlapping each other over the upper part of the pad. The present invention includes an insulating substrate, an ID mark pad including an ID mark on the insulating substrate, and a first insulating layer and a second insulating layer on the insulating substrate wherein the first and second insulating layers expose the ID mark in the ID mark pad. In another aspect, the present invention includes the steps of forming an ID mark pad including an ID mark on an insulating substrate, and forming a first and a second insulating layer which expose the ID mark in the ID mark pad.

Abstract: In an active matrix type display device, an insulating film pattern is formed between scanning lines and/or between signal lines. An upper insulating film is formed on the insulating film pattern and the lines and in spaces between the insulating film patterns and the lines so that the upper insulating film has a continuous top surface at a substantially same level. For further improvement in flatness and adjustment in film thickness of the upper insulating film, the whole surface of the upper insulating film is etched back. After that, pixel electrodes are formed on the upper insulating film.

Abstract: An electronic device having an active matrix liquid crystal device comprising a sealing layer with a region overlapping an insulating film formed over another insulating film, which extends beyond said insulating film and forms on a peripheral switching device, a region in contact with said another insulating film, and a region where said second insulating film is not formed over said another insulating film.

Abstract: An MIM nonlinear device having a large nonlinearity coefficient that represents the sharpness of the voltage-current characteristic, a liquid crystal display panel with high image-quality that uses this device, and a manufacturing method of said MIM nonlinear device are provided. The MIM nonlinear device contains a first conductive film 22, an insulating film 24, and a second conductive film 26 laminated on a substrate 30. The insulating film 24 may contain water, and in the insulating film, in a thermal desorption spectrum, a peak derived from water in the insulating film is 225-300° C. Further, in said thermal desorption spectrum, the number of molecules calculated from the area of the peak derived from the water is preferably 5×1014/cm2 or more.

Abstract: A flexible substrate on which a large number of sorts of LCDs can be installed quickly and inexpensively. On loading on a video controller, a connector 21 is electrically connected to first and second contacts of the video controller. The connector 21 is wired so that, if a wiring 31-1 is cut-out and severed along with the end of the flexible printed wiring board 11, the first and second contacts of the video controller are not in electrically connected state.

Abstract: An electronic device having an active matrix Liquid Crystal Device comprising a sealing layer with a region overlapping an insulating film formed over another insulating film, which extends beyond said insulating film and forms on a peripheral switching device, a region in contact with said another insulating film, and a region where said second insulating film is not formed over said another insulating film.

Abstract: The present invention provides a MIM type non-linear element in which the capacitance is sufficiently small and in which little changes over time are exhibited in the current-voltage characteristics, a liquid crystal display panel with high image quality using the MIM type non-linear element, and a method of manufacturing the MIM type non-linear element. The MIM type non-linear element includes a first conductive film, an insulation film and a second conductive film, which are laminated on a substrate. The insulation film has a relative dielectric constant of 25.5 or less, preferably 24.0-25.5. In elementary analysis by SIMS, a hydrogen spectrum of the boundary region between the first conductive film and the insulation film has a width of 10 nm or more in the depth direction at an intensity of one tenth of the peak intensity. The first conductive film of the MIM type non-linear element shows a peak temperature of 300° C. or higher in a thermal desorption spectroscopy of hydrogen.

Abstract: A thin-film two-terminal element including first metal film functioning as a wiring layer and a first electrode, a first insulating film formed on the first electrode of the first metal film and having a non-linear resistance property, a second metal film formed on the first insulating film and functioning as a second electrode, and a third metal film formed in a wire layer portion of the first metal film and having a smaller stress and a smaller electrical resistance than the first metal film, and a thin-film two-terminal element including, on a resinous substrate as an insulative substrate, a first metal film functioning as a wiring layer and a first electrode, a first insulating film formed on the first electrode of the first metal film and having a non-linear resistance property, a second metal film formed on the first insulating film and functioning as a second electrode, and a second insulating film formed under the second metal film except on a portion thereof which electrically functions with the firs

Abstract: An MIM nonlinear device having a large nonlinearity coefficient that represents the sharpness of the voltage-current characteristic, a liquid crystal display panel with high image-quality that uses this device, and a manufacturing method of said MIM nonlinear device are provided. The MIM nonlinear device contains a first conductive film 22, an insulating film 24, and a second conductive film 26 laminated on a substrate 30. The insulating film 24 may contain water, and in the insulating film, in a thermal desorption spectrum, a peak derived from water in the insulating film is 225-300° C. Further, in said thermal desorption spectrum, the number of molecules calculated from the area of the peak derived from the water is preferably 5×1014/cm2 or more.

Abstract: A system and method for driving a thin film diode (TFD) inclusive AMLCD or imaging device includes providing each pixel with a pair of select lines and a single data line. In certain embodiments, the insulator or semi-insulator layer between electrodes of the diode includes, or is of, amorphous carbon nitride alloy. In other embodiments, the semi-insulating layer includes polycrystalline carbon or nanocrystalline carbon.

Abstract: An active matrix display device of the present invention includes: a plurality of pixel electrodes arranged in a matrix; a plurality of switching elements connected to the respective pixel electrodes; a plurality of scanning lines for supplying a scan voltage to the switching elements; a plurality of signal lines for supplying a signal voltage to the switching elements, provided so as to cross the scanning lines; and a bypass spare line for avoiding at least one of a disconnected portion and a leak portion, formed so as to overlap at least one of the scanning line and the signal line with an insulating film interposed therebetween, wherein the bypass spare line and at least one of the scanning line and the signal line are electrically connected to each other.