Abstract: High resolution gray scale graphical images are formed in a semiconductor substrate by the use of two or more levels of indicia having a plurality of image segments and having a continuous conductive line formed in the surface of the substrate, each image segment includes a portion of said continuous conductive line and a contrasting material providing pixels in which the width of the line within a segment varies in relationship to gray scale levels in the graphic image to be formed. Providing a graphic image to be converted; converting the graphic image to a gray level, two dimensional bit mapped converting the bit mapped image into a set of parallel lines of varying width; each line comprising a single continuous segment in which the width varies based on the density of the gray level required to form the gray level image; and transferring the set of lines to a pattern of conductor/insulator lines on a substrate.

Abstract: This invention relates to an adjusting method for correcting the random component of distortion of a projection optical apparatus without performing complicated assembly and adjustment. This adjusting method has the first step of measuring the residual distortion component of a projection optical system having a predetermined target member in its optical path, the second step of calculating, based on the measurement result of the first step, the surface shape of the target member to cancel the residual distortion component, the third step of removing the target member from the projection optical system and machining the target member so as to have the surface shape calculated in the second step, and the fourth step of inserting the target member machined in the third step into the optical path of the projection optical system.

Abstract: A method of evaluating a refractive index homogeneity of an optical member for photolithography, the method comprising:

Abstract: In order to compensate a distortion in each shot of scanning exposure with a high degree of accuracy, distortion data between a reticle image formed on a reticle and a transfer image transferred onto a substrate, which is generated in each shot at set scanning speed, is set in shot unit (S601, S602), and a compensation driving value is calculated based on the set distortion data (S603). The distortion data is compensated by the calculated compensation driving value, and positioning of the reticle and/or the substrate is controlled in shot unit (S604, S605).

Abstract: Light intensity values only of the vicinity of a specified portion, that is, for example, based on a prescribed value, an area where the distance between edges of an object to be corrected is equal to or shorter than the prescribed value are calculated, and the object to be corrected is corrected based on the light intensity values.

Abstract: When a mask is irradiated obliquely with light from a lighting system, the light reflected from the mask is projected onto a wafer through a projection optical system, and the pattern of the mask is transferred to the wafer. If the magnification of the projection optical system changes because of a vertical movement of the mask, a control unit detects the projection position of the mask pattern image on a stage by an aerial image sensor and also detects a mark on the aerial image sensor by a mark detector so as to determine the baseline of the mark detector. Thus, the positional shift of the projection position of the mask pattern image on the wafer due to the change in magnification is corrected to sufficiently restrict or prevent alignment inaccuracy associated with the change in magnification.

Abstract: A projection exposure apparatus includes a projection optical system with a barrel, a pressure measuring device disposed inside and/or outside the barrel, and a device for estimating a change in pressure in accordance with an output of the pressure measuring device and for compensating for a change in optical performance of the projection optical system due to the change in pressure, in accordance with the estimation.

Abstract: A pattern forming method of the invention for transferring a pattern on a photo-mask onto a photo-sensitive resin film on a substrate using a scan-projection exposure method includes the steps of:

Abstract: In a lithographic projection apparatus, a reflective-type mask is attached to a compliant membrane on a mask table. The backside of the membrane is in turn attached to a plurality of actuators which are operable to deform the membrane. A mask level sensor can be used to detect the level of the mask and the actuators operate to keep the mask at a constant level. Additionally, the actuators may also serve to keep the mask flat and in the correct planar orientation.

Abstract: The projection aligner transfers the image of the pattern formed on the mask to the object by scanning a light beam across the mask and the object. The projection aligner includes a driving mechanism for synchronously moving the mask and the object and thereby scanning the light beam across the mask and the object in a predetermined beam scanning direction. The light beam scanning the mask passes through the mask and is projected onto the object by a projection optical system of which magnification is adjusted by a magnification adjusting mechanism. The magnification adjusting mechanism and the driving mechanism are controlled by a controller such that the difference between the magnification of said projection optical system and a velocity ratio of the mask and the object moved by the driving mechanism becomes below a predetermined maximum value which is determined based on a line width of the pattern formed on the mask.

Abstract: Attention is paid to the phenomenon that a static image distortion characteristic is averaged in the width of a projection area in a scanning direction and becomes a dynamic image distortion characteristic, when a mask pattern is scan-exposed onto a photosensitized substrate by a projection exposure apparatus. At least a random component included in the dynamic image distortion characteristic is corrected by arranging an image correction plate obtained by locally polishing the surface of a transparent parallel plate. Correction plates which minimize other aberrations beforehand are manufactured and installed within a projection optical path, considering that also the other aberrations are averaged and become dynamic aberration characteristics at the time of scan-exposure.

Abstract: Lens distortion correction is characterized by obtaining a correction parameter by using the difference between the latest QC data used when exposing a overlaying layer and the latest QC data used when exposing a overlaid layer.

Abstract: The projection aligner includes a lens unit having an optical axis parallel to a mask, a reflector provided to one side of the lens unit to reflect back light passed therethrough, a light source that emits a light beam toward the object through the mask, and a deflector being inserted in an optical path of the light beam at the other side of the lens unit movably along the optical axis of said lens unit. The deflector has first and second mirrors which are inclined against the optical axis of the lens unit in opposite, directions to each other. The first mirror is arranged to deflect the light beam coming from the mask toward the reflector through the lens unit. The second mirror is arranged to deflect the light beam reflected by the reflector and passed through the lens unit toward the object.

Abstract: Apparatus and method for compensating for distortion of the substrate of a printed circuit workpiece that involves performing two tasks. First, a mask that carries functional circuit features and alignment features is positioned rotatably so that the mask alignment features, when projected onto a table that holds the printed circuit workpiece, will be on a line extending parallel to one of two orthogonal axes of the table. Second, the spacing of alignment features on the printed circuit workpiece is determined and this determination is a measure of the distortion of the printed circuit workpiece substrate. A lens through which the mask image is projected is moved to adjust the magnification of the image in accordance with the measured distortion of the substrate of the printed circuit workpiece.

Abstract: A printer (100) able to print in a plurality of output formats depending on width of media (160) loaded in the printer (100) is disclosed. The printer (100) provides high resolution and grayscale imaging capability for monochromatic applications. Illumination optics (11) receive a source light beam, from one or more LEDs, uniformize and polarize the beam and direct the beam through a polarization beamsplitter (50). The polarization beamsplitter (50) directs one polarization state of light to one or more LCD spatial light modulators (52), which modulate the polarization of the polarized beam to provide output exposure energy suitable for image marking on media (160). An optional sensor (234) allows printer (100) to automatically detect the width of a given type of media (160) in order to select from a set of compatible output format. Multiple segments of media (160) at the image plane (150) simultaneously.

Abstract: A reticle system includes a reticle film having thereon a plurality of scale patterns each having a plurality of scale marks plotted therein, and a shield film having a plurality of pinholes each disposed corresponding to one of the scale patterns. A light emitted from a point light source having an effective coherent factor “x” and passing the reticle film at a scale mark “x” or below “x” in one of the scale patterns passes through the corresponding pinhole. After transferring the scale patterns onto a wafer surface, the effective coherent factors are read from the maximum scale marks for respective scale patterns on the wafer surface. The dispersion of the coherent factors can be calculated therefrom.

Abstract: The correction of improper leveling tilt induced by a leveling sensor of a semiconductor equipment improperly detecting a semiconductor wafer having an asymmetrical semiconductor pattern as out of horizontal is disclosed. The improper leveling tilt is determined, and a corrective leveling tilt is applied to compensate for the improper leveling tilt induced by the leveling sensor. The improper leveling tilt can be determined as the experimentally determined difference in focus between dense features of the asymmetrical pattern divided by the experimentally determined distance between the dense features. The improper leveling tilt can also be modeled as the difference in height between dense features and isolated features of the asymmetrical pattern, times a predetermined parameter, and divided by the field-of-view length of the leveling sensor.

Abstract: A method and apparatus for shaping and/or orienting radiation irradiating a microlithographic substrate. The method can include directing a beam of radiation along a radiation path toward a reflective medium, with the beam having a first shape in a plane generally transverse to the radiation path. The shape of the radiation beam can be changed from the first shape to a second, different shape by inclining a first portion of the reflective medium relative to a second portion of the reflective medium and reflecting the radiation beam toward a microlithographic substrate. The beam can then impinge on the microlithographic substrate after changing the shape from the first shape to the second shape, and at least a portion of the radiation can be inclined relative to the radiation path, for example, to enhance the imaging of selected diffractive orders.

Abstract: Linewidth variations and bias that result from MEF changes and reticle linewidth variations in a printed. substrate are controlled by correcting exposure dose and partial coherence at different spatial locations. In a photolithographic device for projecting an image of a reticle onto a photosensitive substrate, an adjustable slit is used in combination with a partial coherence adjuster to vary at different spatial locations the exposure dose received by the photosensitive substrate and partial coherence of the system. The linewidth variance and horizontal and vertical or orientation bias are calculated or measured at different spatial locations with reference to a reticle, and a corrected exposure dose and partial coherence is determined at the required spatial locations to compensate for the variance in linewidth and bias on the printed substrate. Improved printing of an image is obtained, resulting in the manufacturer of smaller feature size semiconductor devices and higher yields.

Abstract: A scan exposure apparatus includes a mask stage on which a mask is to be placed, a substrate stage on which a substrate is to be placed, and a detection unit for detecting a surface shape of the substrate in each of a plurality of areas thereof. The surface shape is taken into consideration to drive the substrate stage in an exposure process. The apparatus further includes a controller for deciding scanning speeds of the mask stage and the substrate stage for each of a plurality of the areas based on the result of detection by the detection unit so as not to exceed a predetermined value of a synchronization error between the mask stage and the substrate stage.

Abstract: The present invention provides a method of operating a lithographic projection apparatus including calculating a change in aberration effect in the projection system, due to heating effects, as a function of time, based on at least one set of predetermined parameters; and adjusting the lithographic projection apparatus to compensate for the calculated change in aberration effect. The parameters are obtained by a calibration operation, which may comprise a coarse calibration followed by at least one fine calibration. The coarse calibration yields a first estimate of at least a subset of the parameters. The estimate can be used as an input for a subsequent fine calibration. The calibration may also comprise a single fine calibration.

Abstract: A imaging tool for use with a mask with features oriented along at least an x-axis or a y-axis where the x-axis extends in directions substantially perpendicular to the directions of the y-axis. The tool has a condenser lens with a condenser plate which is located in a condenser lens pupil plane and which has a condenser aperture with four-sides. The sides of the condenser aperture are oriented in substantially the same direction as either the x-axis or the y-axis. The condenser lens is positioned to place at least a portion of any illumination on at least a portion of the mask.

Abstract: A projection exposure method for exposing a substrate through a projection optical system with a predetermined pattern formed on a mask. The method includes the steps of calculating an amount of lateral variation of a pattern image in a direction perpendicular to an optical axis of the projection optical system, determining a distortion produced solely by the projection optical system, obtaining a total expected distortion by a summation of the distortion produced solely by the projection optical system and the calculated variation of the positions at which the image of the pattern of the mask is formed, and exposing the substrate while partially correcting the positions at which the image of the pattern of the mask is formed through the projection optical system based on the total expected distortion.

Abstract: There is disclosed a method and an apparatus of correcting image picked up from a frame photographed on a photo filmstrip through a photographic device. An exposure correction amount is calculated by use of correction parameters predetermined with regard to decrease in illuminance on a focal plane of the taking lens with radial distance from an optical axis of the taking lens, and a curvature of the photo filmstrip relative to the focal plane. The exposure correction amount is calculated for a respective pixel of the picture with regard to a relative position of the respective pixel in the frame to an optical axis of a taking lens of the photographic device. The relative positions are defined on the assumption that the photo filmstrip is held flat in a focal plane of the taking lens with a center point of the frame located on the optical axis at the photography.

Abstract: A plate with substantially constant thickness is used to compensate for the residual distortion in the image projected by a high-quality projection lens for lithography. The two surfaces of the plate have an identical aspherical profile, whose shape has been calculated using the measured distortion map of the lithographic objective. The figuring process applied to the plate uses the principle of polishing in the presence of an elastic deformation, so as to achieve the desired aspherical shape on both sides.

Abstract: Disclosed is a step-and-scan exposure method improved in exposure at a periphery of a wafer. An area illuminated by an exposure beam is made to relatively scan a shot area positioned at the wafer periphery from the outside of the wafer to the inside. Predetermined measurement points of a sensor for detecting positional information of a wafer with respect to a focal position of a projection optical system in the direction of the optical axis of the projection optical system are made to relatively scan along with the illumination area of the exposure beam. Focus control is performed to make the wafer move in the direction of the optical axis when only part of the selected predetermined measurement positions reach the wafer, and leveling control is performed in addition to adjust the tilt of the wafer when all of the selected predetermined measurement positions reach the wafer.

Abstract: A device for exposing a peripheral area of a wafer, in which the area which is located within the wafer (and which need not be exposed) is prevented from being exposed regardless of the orientation the wafer which bears a notch in its periphery. The device includes an exposure light irradiation part, a wafer edge determination part, and a notch determination part are arranged integrally with each other. The wafer edge determination part moves such that it follows the edge of the wafer. The peripheral area of the edge of the wafer is exposed by exposure light emitted by the exposure light irradiation part. When the exposure sequence begins irradiation with exposure light is not immediately done, even if the means for wafer edge determination has determined the wafer edge. Instead, the wafer is rotated by a given amount and then exposure is begun. When the area irradiated with exposure light reaches the notch starting position, wafer edge determination is stopped until the end position of the notch is reached.

Abstract: A static image distortion characteristic is averaged in the width of a projection area in a scanning direction and becomes a dynamic image distortion characteristic, when a mask pattern is scan-exposed onto a photosensitized substrate by a projection exposure apparatus. At least a random component included in the dynamic image distortion characteristic is corrected by a arranging an image correction plate obtained by locally polishing the surface of a transparent parallel plate. Correction plates which minimize other aberrations beforehand are manufactured and installed within a projection optical path, considering that also the other aberrations are averaged and become dynamic aberration characteristics at the time of scan-exposure.

Abstract: An optical system, in particular a microlithographic projection printing installation, has in particular a slot-shaped image field or rotationally non-symmetrical illumination. The system comprises a light source (30) as well as at least one optical element, in particular a lens or a mirror. In the region of at least one surface acted upon by the radiation (1) of the light source (30) the optical element is substantially symmetrical in relation to an axis of rotational symmetry (5). The optical element or its housing (6) is rotatably connected to a frame (7) by at least one bearing (8, 9, 10). An actuator (18) sets the optical element (25) or its housing (6) in rotation about the axis of rotational symmetry (5). The actuation cooperates with a control device (23). The latter activates the actuator (18) for rotation of the optical element at least temporarily during the period, when the optical element is exposed to lumination. In such a manner rotationally non-symmetrical image defects are compensated.

Abstract: A microlithography projection apparatus comprises an illuminator, for supplying a beam of radiation for illuminating a pattern on a mask, and a projection system for forming an image of the illuminated portion of the mask on a resist-coated substrate. The image is projected off-axis with respect to the optical axis of the projection system and the aperture of the illuminator is minimized to that of the illuminated portion of the mask. The illuminator is provided with a compensator, such as a tiltable mirror or wedge-like transmissive optical element for compensating for telecentricity errors intrinsic to the projection system.

Abstract: A prealignment system according to one embodiment of the invention is configured to determine a position and orientation of a substrate (e.g. a polygonal substrate). The system includes means for rotating a substrate about an axis of rotation that is substantially perpendicular to the plane of the substrate. The system also includes a non-contact edge sensor configured to indicate, at each of a plurality of angles of rotation of the substrate, a corresponding distance of an edge of the substrate along a line intersecting the axis of rotation. Means are also provided for determining, based on the plurality of distances, best-fit lines for at least two edges of the substrate, and for determining a position and orientation of the substrate based on the best-fit lines.

Abstract: A display unit (22) displays a shot map, and an operator designates an evaluation point on the shot map. A exposure control unit (21) computes the position coordinates on a projection area (on a plate) corresponding to the designated evaluation point, and outputs the result to the display unit (22). When an overlapping portion is detected in a pattern exposed onto the substrate (6), and an evaluation point is designated on the overlapping portion, the exposure control unit (21) outputs corresponding pattern candidates, and the operator can select a desired pattern from among the candidates. Furthermore, when one point is designated on a shot map, two points containing a pattern boundary are automatically indicated as evaluation points. Thus, an evaluation point can be designated, and the position on the plate can be correctly obtained within a short time, thereby improving the operation efficiency of the apparatus.

Abstract: Particular types of distortion within a lithographic system may be characterized by linewidth control parameters. Linewidth control parameters of any given line or feature within a printed pattern vary as a result of optical capabilities of the lithography apparatus used, particular characteristics of the reticle, focus setting, light dose fluctuations, etc. The instant invention uses focus offset coefficients to change the focus at points within a slot to compensate for the linewidth control parameter variations introduced by the factors contributing to such variations. Additionally, different focuses can be set dynamically along the scan for a particular slot point. A set, or sets, of focus offset coefficients is generated for a particular lithography apparatus, depending on the number of linewidth control parameters for which correction is desired.

Abstract: An exposure apparatus and an exposure method that minimize the range over which exposing light becomes defocused even when a non-level portion is present within each shot are provided. One shot is selected from a plurality of shots (exposure unit areas) set on a wafer (S 50). 49 measurement points are set in the selected shot and the three-dimensional coordinates of each measurement point are determined (S 70). Next, an arithmetic operation is performed using the 49 sets of three-dimensional coordinate data to ascertain an “in-shot focus plane” (S 90). This arithmetic operation may be performed through, for instance, the method of least squares. The extents of positional deviation between the surface of the selected shot and the in-shot focus plane is ascertained and the extents of deviation are stored in memory as “adjustment values” (S 110). An exposure shot to undergo exposure processing is selected and the surface level variation manifesting at the exposure shot is measured.

Abstract: A projection exposure apparatus (10) for forming an image of a pattern present on a first object such as a reticle (R) onto a second object, such as a wafer (W). The apparatus comprises along three optical axes (AZ1, AX, AZ2), an illumination optical system capable of illuminating the reticle with partially polarized light, and a catadioptric projection optical system (40-70) arranged adjacent the reticle and opposite the illumination optical system. The catadioptric projection optical system comprises one or more substantially spherical mirrors (48), a plurality of refractive members (42, 48, 72, 74), and one or more plane mirrors (60, 66). The plane mirrors are designed and arranged so as to allow a substantially unpolarized image of the reticle pattern, which is illuminated with partially polarized light, to be formed on the wafer.

Abstract: A device manufacturing method is disclosed in which the aberration of the projection system of a lithographic projection apparatus is obtained in terms of the Zernike expansion. The field distribution of displacement error and focal plane distortion of the projected image are calculated on the basis of the Zernike aberration and sensitivity coefficients which quantify the relationship between Zernike aberration components and the error in the image. A calculation is then performed to determine the compensation to apply to the apparatus in order to minimize the error in the image. The compensation is then applied to the apparatus. The compensation may comprise increasing one component of aberration of the apparatus in order to decrease the effect of another aberration, such that, on balance, the image quality as a whole is improved.

Abstract: An exposure apparatus that exposes an image of a pattern of a mask onto a photosensitive substrate with EUV radiation, and includes a radiation source unit and an exposure apparatus body unit. The exposure apparatus body unit includes an optical integrator, a mirror arranged in an optical path between the radiation source unit and the optical integrator, a detector arranged in an optical path of the exposure apparatus body unit, and a controller which is connected to the detector and which controls an inclination of the mirror based on an output from the detector. In addition, the radiation source unit and the exposure apparatus body unit are installed independently.

Abstract: An improved technique of exposing a photoresist through a grating mask reduces the occurrence of overlapping gratings and also avoids distortions in the exposed mask when there is a gap between the contact mask and the photoresist layer. The technique is particularly well suited to forming Bragg gratings on semiconductors and other materials that are used for wavelength selection in, for example, optical communications applications. The technique employs a phase grating held close to, but out of contact with, the photoresist layer. Amongst the advantages provided by the present invention is that the requirements of the permissible thickness of the photoresist layer suitable for writing high visibility gratings are relaxed, thus reducing the complexity and costs for processing the substrate.

Abstract: A projection optical system having a large numerical aperture in a soft X-ray wavelength range of 200 nm or less, specifically 100 nm or less and a resolution drastically lower than 50 nm, and a projection exposure apparatus provided with the projection optical system.

Abstract: A multi-image reticle used to form integrated circuitry comprises a two dimensional array of spaced images arranged in a matrix of controllably spaced rows and columns of images on a single reticle. No rotation of the reticle is required to expose various levels of circuitry on a semiconductor wafer. The wafer is held in a stepper device, which controllably positions the wafer under the desired image of the mask for exposure of a resist on the wafer. A movable aperture controls exposure through a selected image or mask pattern on the reticle. By controlling which image is used, and accurately positioning the wafer via the stepper, multiple images are accurately registered, leading to improvement in dimensions of circuitry and other structures formed on the wafer.

Abstract: A predetermined wafer (5) is exposed with the first exposure layout by using a projection optical system (4) for projecting the pattern of a reticle (2) onto the wafer, an illumination device (10) and light-receiving device (11) for detecting a plurality of plane positions on the wafer (5), and a driving unit for driving the wafer (5) along the optical axis of the projection optical system (4). Prior to the second exposure with the second exposure layout at the second exposure field size, a position where a plane position is to be detected is determined on the basis of at least one of the first exposure field size, the first exposure layout, and underlayer information of the first exposure. Then, the plane position is detected.

Abstract: A photolithographic method and apparatus are disclosed. The apparatus uses a diffraction plate or traditional optical elements to control and shape the light from an illuminator into a Gaussian light intensity distribution for illuminating a phase shift photomask. The Gaussian distribution reduces asymmetrical aberrations of the objective lens that are exaggerated by the phase shift photomask.

Abstract: A monochrome printer (100) and a method for printer optics design utilizing a spatial light modulator (52), able to deploy a number of possible monochromatic light sources for use with a number of different types of photosensitive media (160), are disclosed. The printer provides high resolution and grayscale imaging capability for monochromatic applications such as micrographics and for diagnostic imaging. In the apparatus and method, illumination optics (11) receive a source light beam, from one or more LEDs or from a number of other possible monochromatic light sources available on the printer (100), uniformize and polarize the beam, and direct the beam through a polarization beamsplitter element (50). The polarization beamsplitter element (50) directs one polarization state of light to an LCD spatial light modulator (52).

Abstract: A computer system comprises a first computer into which target information that an optical apparatus is to achieve is inputted and a second computer that determines the specification of a projection optical system based on the target information received from the first computer via a communication path with using a wave-front aberration amount, which the projection optical system is to satisfy, as a standard. Therefore, in the process of making the projection optical system, higher-order components of the aberration as well as lower-order components can be simultaneously corrected by adjusting the projection optical system based on the result of measuring the wave-front aberration to satisfy the specification, so that the making process becomes simpler. Furthermore, the target that the exposure apparatus is to achieve is securely achieved due to the projection optical system.

Abstract: Positions of reticle and stage fiducial marks (16, 15) are measured from image signals that are output by a camera (9) that simultaneously receives reflected light from the reticle fiducial mark (16) and reflected light from the stage fiducial mark (15). An image, which is obtained from an image signal representing the reticle fiducial mark (16), is stored in an image memory (11a) in such a manner that lightness of the image is increased to a predetermined lightness, and the reticle fiducial mark (16) and stage fiducial mark (15) are measured from image signals representing respective ones of the reticle fiducial mark (16) and stage fiducial mark (15).

Abstract: A lithographic manufacturing process is disclosed in which a first information on a first lithographic transfer function of a first lithographic projection apparatus is obtained. The information is compared with a second information on a second lithographic transfer function of a second lithographic projection apparatus, for reference. The difference between the first and second information is calculated. Then, the change of machine settings for the first lithographic projection apparatus, needed to minimize the difference, is calculated and applied to the first lithographic projection apparatus such that the match between the first and second lithographic projection apparatus of any pitch-dependency of feature errors is improved.

Abstract: A scanning exposure apparatus which promptly analyzes a cause for a variation in exposure line width. The scanning exposure apparatus includes a mask stage on which a mask is placed, a wafer stage on which a wafer is placed, a focusing mechanism which detects surface position information of the water and adjustment means which adjusts the surface position of the wafer. Control means acquires pose information of the wafer adjusted by the adjustment means at the time of exposure and stores the pose information in a memory in association with preacquired surface shape information of an exposure area. A state in which the exposed surface of the wafer has been exposed with respect to exposure light is known from the pose information and the surface shape information.

Abstract: A scan type projection exposure apparatus which includes an illumination optical system for forming a slit-shaped illumination area on a pattern on a mask by using illuminating light, and a projection optical system for forming an image of a portion of the pattern in the illumination area on a substrate, includes: a mask stage which moves at least in one direction while holding the mask; a substrate stage which moves two-dimensionally while holding the substrate; a control system for synchronously scanning the mask stage and the substrate stage; and an image forming performance adjusting system for adjusting image forming performance of the projection optical system and having a component placed in an area through which the illuminating light incident from the illumination area on the mask to the projection optical system does not pass.

Abstract: A lithographic projection apparatus comprising an illumination system; a support structure for holding a mask; a substrate table for holding a substrate; a projection system for projecting a pattern onto a target portion of the substrate; and an interferometric measurement system for measuring wave front aberrations of the projection system, characterized in that the interferometric measurement system comprises: a grating, featuring a grating pattern in a grating plane, said grating being movable into and out of the projection beam, such that the grating plane is substantially coincident with said object plane; a pinhole, featuring a pinhole pattern in a pinhole plane and arranged in a pinhole plate, said pinhole being movable into and out of the projection beam, such that the pinhole plane is substantially coincident with a plane downstream of the projection system and optically conjugate to said object plane, and a detector with a detector surface substantially coincident with a detection plane, said detect

Abstract: This invention provides an apparatus and method for evaluating variations in moving standard deviation and utilizing the evaluation result. A scanning exposure apparatus for transferring a reticle pattern onto a wafer with slit-shaped exposure light while a reticle stage and wafer stage are moved at a predetermined speed ratio includes a measurement system (211) arranged to measure the sync deviation between the reticle stage and the wafer stage, and a sync precision index calculation device (216) arranged to calculate variations in a plurality of moving standard deviations (MSD) corresponding to a plurality of points on the wafer on the basis of a plurality of sync deviations measured by the measurement system (211). An exposure job is controlled on the basis of the arithmetic result.