Abstract: A dioptric projection objective for forming an image of an object, includes a plurality of lenses arranged in an optical path between the object and the image. At least two lenses of the plurality of lenses have respective mutually adjacent lens surfaces which are aspheric to define a double asphere, and the plurality of lenses include positive lens groups, each having at least two lenses, and negative lens groups each having at least two lenses. In addition, a dioptric projection objective having an image side numerical aperture that is greater than or equal to 0.75 for forming an image of an object, includes a plurality of lenses arranged in an optical path between the object and the image, with at least two of the lenses of the plurality of lenses having respective mutually proximal lens surfaces which are aspheric to define a double asphere.

Abstract: A wavefront measurement system includes a source of electromagnetic radiation. An imaging system directs the electromagnetic radiation at an object plane that it uniformly illuminates. A first grating is positioned in the object plane to condition the radiation entering the input of a projection optic. A projection optical system projects an image of the first grating onto the focal plane. A second grating is positioned at the focal plane that receives a diffracted image of the source to form a shearing interferometer. A CCD detector receives the image of the first grating through the projection optical system and the second grating that forms a fringe pattern if there are aberrations in the projection optical system. Phaseshift readout of fringe pattern can be accomplished by stepping the first grating in a lateral direction and reading each frame with the CCD detector. The first grating includes a plurality of reflecting lines each formed by a plurality of reflecting dots.

Abstract: A microlithography method includes: interferometrically measuring information about a position of a microlithography stage with respect to each of multiple metrology axes during a photolithographic exposure cycle; analyzing the position information to determine correction factors indicative of a local slope on a side of the stage used to reflect an interferometric measurement beam and optical gradients caused by environmental effects produced by the photolithographic exposure cycle; and applying the correction factors to subsequent interferometric measurements of the stage.

Abstract: An exposure apparatus for illuminating an original with light from a light source and for projecting a pattern of the original, as illuminated, onto a surface to be exposed, includes a hologram, an optical system for projecting light from the light source onto the hologram, a slit device disposed at a predetermined position where light of a slit-like shape is to be substantially produced by the hologram, and an imaging optical system for illuminating the original with the light passed through a slit of the slit device. The slit device serves to determine an illumination region of light projected onto the original.

Abstract: There is provided a correction apparatus for correcting a shift between optical axes in two separate optical units adapted such that a beam emitted from one unit enters the other, including a converter for converting a positional shift between the optical axes into an angular shift, and an angular corrector for correcting the angular shift.

Abstract: In an off-axis leveling procedure a height map of a mask is generated at a measurement station. The height map is referenced to a physical reference surface of a mask support. The physical reference surface may be a surface in which is inset a transmission image sensor. At the exposure station the height of the physical reference surface is measured and related to the focal plane of the projection lens. The height map can then be used to determine the optimum height and/or tilt of the mask support to position the exposure area on the mask in best focus during exposure.

Abstract: In order to reduce a displacement in position between an under pattern and a resist pattern due to distortion, a reticle (18) formed with reticle alignment marks (32) at at least two points is used, reticle microscopes (34) are respectively placed in association with positions of the reticle alignment marks (32) at the time that the reticle (18) is supported by a reticle stage (20) and rotated about an optical axis (Z axis) of an image-forming optical system (26) by 90°, and the reticle alignment marks (32) are detected by any reticle microscope (34) even if the reticle (18) being supported by the reticle stage (20) is rotated about the Z axis.

Abstract: Shot exposure of arranging first marks on a photosensitive substrate via a reticle in M rows and N columns (e.g., three rows and three columns) at a predetermined column interval and row interval is repeated m×n times (e.g., 2×2), thereby forming first marks in M×m rows and N×n columns (six rows and six columns) on the photosensitive substrate. M and m are natural numbers which are relatively prime, N and n are natural numbers which are relatively prime, and M>m and N>n hold. Shot exposure of arranging second marks on the photosensitive substrate via the reticle in m rows and n columns at the predetermined column interval and row interval is repeated M×N times, thereby forming second marks in M×m rows and N×n columns. Accordingly, M×m×N×n overlay marks are formed from the first and second marks. The misalignment amounts of the first and second marks are measured for each of the M×m×N×n formed overlay marks.

Abstract: A driving device includes a first member, an annular second member arranged outside the first member, an annular first plate for connecting the first and second members to each other, and an annular second plate for connecting the first and second members to each other. The first and second members are moved relative to each other by supplying or exhausting a fluid into or from a space surrounded by the first and second members and the first and second plates. Also, at least one of (i) an inner diameter a1 of a portion of the second member at which the second member is connected to the first plate is different from an inner diameter a2 of a portion of the second member at which the second member is connected to the second plate and (ii) an outer diameter b1 of a portion of the first member at which the first member is connected to the first plate is different from an outer diameter b2 of a portion of the first member at which the first member is connected to the second plate.

Abstract: Apparatus for performing measurement of a dimension of a test marked formed by overlapping feature imaged onto a an image forming layer of a semiconductor wafer and the calculation of the critical dimensions of the features from test mark. This is used in semiconductor processing. Also included is software configured to program a measurement device to perform the measurement and calculation of the dimension of a test mark.

Abstract: An exposure apparatus according to this invention comprises: a projection optical system having a predetermined image forming characteristic; a reticle stage, arranged on one side of the projection optical system, which holds a reticle having a transfer pattern and has a reference plate for positioning; and a wafer stage, arranged on the other side of the projection optical system, which holds a wafer where the transfer pattern is transferred and has a reference mark. For transferring the transfer pattern to the wafer, a reticle protection pellicle and an optical device are arranged between the reticle and the projection optical system. For performing positioning using the reference plate and the reference mark, a correction optical device is arranged between the reference plate and the projection optical system. The correction optical device has an equal thickness to the total thickness of the optical device and pellicle.

Abstract: The method of correcting a residual aberration of a projection optical system, which is used for projecting a pattern of a photo mask onto a photosensitive film located on a substrate, the method includes calculating an effect of a residual aberration on a given pattern on the basis of the residual aberration of the projection optical system obtained by measurement, calculating a moving amount of an adjustable aberration in the projection optical system such that the effect of the residual aberration becomes minimum in a given area, and moving the adjustable aberration in accordance with the calculated moving amount.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern formed a mask onto an object to be exposed, a correction optical element, provided between the mask and the projection optical system, for reducing a deformation of the pattern, and a detector of an oblique light projection system, provided at a side of a pattern surface of the mask, for detecting a surface shape of the mask through the correction optical element.

Abstract: A corrective filter for use in an optical system to correct a defect in a reticule and/or pellicle. The corrective filter may be positioned between a light source and the reticule, between the reticule and a wafer, or in combination with the reticule and/or pellicle. The invention provides a method of characterizing the optical properties of the corrective filter.

Abstract: The method and apparatus for reading an image read photoelectrically an original image by prescan, set reading conditions in accordance with prescanned data obtained by the prescan, and perform fine scan that photoelectrically reads the original image to obtain fine scanned data for producing output image data. The method and apparatus analyze data of a preset area of the original image for both the prescanned data and the fine scanned data to calculate image characteristic values of the prescanned data and the fine scanned data of the preset area, calculate a correction condition for the fine scanned data such that the image characteristic values of the prescanned data and fine scanned data match and process the fine scannned data on the correction condition.

Abstract: A pattern enlarged from a transfer pattern is divided into patterns (Pi) of a plurality of master reticles (Ri). Images of the patterns (Pi) of the plurality of master reticles (Ri) reduced by a projection optical system are successively projected and exposed on the surface of a blank (mask substrate) while stitching. Marks (M1, M2) indicating identification information for identifying a master reticle from another master reticle, transfer positions, etc. are formed on the master reticles (Ri). These marks (M1, M2) are detected before the exposure and exposure is performed in accordance with the information on the transfer position etc. shown by the marks (M1, M2) or reticle information (exposure conditions, various correction values, etc.) relating to the master reticles stored and held in advance corresponding to the identification information. The number of work steps when producing a working reticle using the plurality of master reticles is reduced and occurrence of work errors can be prevented.

Abstract: A photolithography exposure apparatus exposes a substrate to a pattern image formed on a mask to transfer the pattern onto the substrate. The apparatus includes a substrate stage on which the substrate is mounted. The substrate stage together with the substrate is movable when the substrate is being exposed to the pattern image. A memory stores pattern image distortion information generated in accordance with an exposure position on the substrate when the pattern image is being transferred onto the substrate. A compensator compensates for the distortion so that the pattern is formed cleanly on the substrate.

Abstract: Linewidth variations and bias that result from MEF changes and reticle linewidth variations in a printed substrate are controlled by correcting exposure dose and partial coherence at different spatial locations. In a photolithographic device for projecting an image of a reticle onto a photosensitive substrate, an adjustable slit is used in combination with a partial coherence adjuster to vary at different spatial locations the exposure dose received by the photosensitive substrate and partial coherence of the system. The linewidth variance and horizontal and vertical or orientation bias are calculated or measured at different spatial locations with reference to a reticle, and a corrected exposure dose and partial coherence is determined at the required spatial locations to compensate for the variance in linewidth and bias on the printed substrate. Improved printing of an image is obtained, resulting in the manufacture of smaller feature size semiconductor devices and higher yields.

Abstract: The present invention provides systems and methods that facilitate performing fabrication process. Critical parameters are valued collectively as a quality matrix, which weights respective parameters according to their importance to one or more design goals. The critical parameters are weighted by coefficients according to information such as, product design, simulation, test results, yield data, electrical data and the like. The invention then can develop a quality index which is a composite “score” of the current fabrication process. A control system can then do comparisons of the quality index with design specifications in order to determine if the current fabrication process is acceptable. If the process is unacceptable, test parameters can be modified for ongoing processes and the process can be re-worked and re-performed for completed processes. As such, respective layers of a device can be customized for different specifications and quality index depending on product designs and yields.

Abstract: An imagery characteristic is corrected by changing the position and/or orientation of a reticle or lens elements of a projection lens system. Correction of the imagery characteristic, however, causes displacement of the projected pattern image of the reticle. The relation between the driving amount of the lens elements and reticle and the lateral displacement of the center of the pattern image of the reticle is stored as a table in advance. When the lens elements and/or the reticle are driven, lateral displacement of the pattern image can be obtained by accessing the table. Alternatively, the lateral displacement can be determined using a base-line amount corresponding to a distance between a detection center of a substrate position detector and a center of the projected image. Once the pattern image displacement is determined, the substrate can be accurately positioned.

Abstract: A method of operating a lithographic projection apparatus including forming a spot of radiation at the wafer level using a pinhole at reticle level. A sensor is defocused with respect to the spot such that it is spaced apart from the wafer level. The sensor is scanned beneath the spot to measure the angular intensity distribution of radiation at the spot and to determine the intensity distribution at the pupil plane of the projection lens system.

Abstract: An exposure method for projecting, through a projection optical system, a predetermined pattern formed on a mask onto an object to be exposed, said exposure method comprising the steps of calculating a Zernike sensitivity coefficient that represents sensitivity of a change of image quality of the predetermined pattern to a change of a Zernike coefficient, when wave front aberration in the projection optical system is developed into a Zernike polynomial in plural point light sources that divide an effective light source area for illuminating the mask, and determining an effective light source distribution based on intensity of each point light source and the Zernike sensitivity coefficient.

Abstract: An exposure apparatus includes a projection optical system of a catadioptric type and an optical element disposed on a reciprocating light path of the projection optical system. The optical element is movable along an optical axis direction.

Abstract: The correction of improper leveling tilt induced by a leveling sensor of a semiconductor equipment improperly detecting a semiconductor wafer having an asymmetrical semiconductor pattern as out of horizontal is disclosed. The improper leveling tilt is determined, and a corrective leveling tilt is applied to compensate for the improper leveling tilt induced by the leveling sensor. The improper leveling tilt can be determined as the experimentally determined difference in focus between dense features of the asymmetrical pattern divided by the experimentally determined distance between the dense features. The improper leveling tilt can also be modeled as the difference in height between dense features and isolated features of the asymmetrical pattern, times a predetermined parameter, and divided by the field-of-view length of the leveling sensor.

Abstract: A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

Abstract: An alignment system uses a self-referencing interferometer that produces two overlapping and relatively rotated images of an alignment markers. Detectors detect intensities in a pupil plane where Fourier transforms of the images are caused to interfere. The positional information is derived from the phase difference between diffraction orders of the two images which manifests as intensity variations in the interfered orders. Asymmetry can also be measured by measuring intensities at two positions either side of a diffraction order.

Abstract: A photolithography system includes a photolithography tool 32 that includes a stage upon which a semiconductor wafer is mounted. The tool is operable to move the stage to automatically focus a pre-determined image on a surface of the semiconductor wafer. The tool is further operable to log movements of the stage. The system also includes an automation host computer 36 operable to poll the photolithography tool 32 to obtain data reflecting the logged movements of the stage. The automation host computer 36 is further operable to analyze the data and compare the data to pre-determined error conditions. The host computer also takes a pre-determined action, including sending an electronic mail message to the personal computers 38 of relevant line personnel, in the event the data meets the pre-determined error conditions.

Abstract: A system for correcting aberration and distortion in EUV lithography places a reticle on a deformable reticle chuck, and a reticle height sensor is used to measure the surface height of the reticle placed on the deformable reticle chuck. An optical system projects EUV radiation onto the reticle and collects and projects reflected EUV radiation from the reticle through its exit pupil onto a wafer placed on a wafer chuck. A deformable mirror disposed proximal to the exit pupil may also be controlled for this purpose. The deformable reticle chuck and the deformable mirror are controlled such that aberration and distortion of an image of the reticle formed on the wafer by the optical system are corrected based on the height measured by the reticle height sensor.

Abstract: To obtain an exposure condition determined in accordance with properties of each aligner without performing complicated processes for verification of the exposure condition, a database 10 included in an exposure condition determination system 100 stores information about exposures performed in the past. Specifically, the database 10 stores mask information 11, aligner information 12, resist process information 13 and past exposure condition information 14. An exposure condition determination unit 15 determines an exposure condition suitable for a new mask in accordance with an exposure condition determination program, based on various information extracted from the database 10 and information about the new mask. Then, the exposure condition determination unit 15 outputs an exposure condition 21 for the new mask resulted from the determination.

Abstract: A system and method for increasing a scan rate in a photolithography system by increasing a unit travel length while maintaining a minimum resolution is provided. The method includes determining the minimum resolution and a pixel spacing distance equal to the unit travel length. The method also includes calculating a window size based on the minimum resolution and the pixel spacing distance. A plurality of windows of the calculated size are established so that a pixel in a first window is offset from a pixel in a second window by the minimum resolution in a first dimension and the pixel spacing distance in a second dimension, and one of the plurality of windows is selected for projection onto a subject.

Abstract: A scanning exposure apparatus for transferring a pattern of a master onto each of a plurality of shot regions defined on a substrate, while synchronously scanning the master and the substrate. The apparatus includes a master stage for moving the master, a substrate stage for moving the substrate, and a controller for controlling movement of the substrate stage during scanning exposure of the plurality of shot regions so as to assure that a setting distance in which the substrate stage is moved guarantees that a synchronization error between the master stage and the substrate stage falls within an allowable range after the substrate stage is accelerated up to a scan speed for the scanning exposure. The controller controls the movement of the substrate stage such that a setting distance for first shot region, which is exposed first upon a change in a row to which a shot region to be exposed belongs, is set to be longer than a setting distance for other shot regions.

Abstract: An evaluation mask for evaluating a projection-type exposure apparatus, the mask including at least one diffraction grating pattern for producing a diffracted light of the positive first-order and a diffracted light of negative first-order, diffraction efficiencies of the diffracted lights being different respectively, one of the diffracted lights having a magnitude that is zero, and an image of the at least one diffraction grating pattern being projected onto a test substrate by the projection-type exposure apparatus, and a reference pattern for obtaining a reference image to measure a displacement of the image of the diffraction grating pattern, and an image of the reference pattern being projected onto the test substrate or the image detector by the projection-type exposure apparatus, wherein the images of the diffraction grating pattern and the reference pattern projected onto the test substrate or the image detector are used for evaluating the projection-type exposure apparatus.

Abstract: A method and apparatus for measuring the alignment of masks in a photolithographic process. A first grating is formed having lines and spaces on a wafer using a first mask having a pattern for the first grating. A second grating is formed having lines and spaces on the wafer using a second mask having a pattern for the second grating and also the pattern for forming the first grating. A determination is then made based on the difference in the width of either the lines or the spaces of the first and second gratings formed on the wafer if the first and second masks are misaligned.

Abstract: A system and method are used to calibrate a focus portion of an exposure section of a lithography tool. A wafer is exposed so that a resulted or formed patterned image is tilted with respect to the wafer. The tilting can be imposed based on controlling a wafer stage to tilt the wafer or a reticle stage to tilt the reticle. The wafer is developed. Characteristics of the tilted patterned image are measured with a portion of the lithography tool to determine focus parameters of an exposure system. The portion can be an alignment system. The measuring step can measure band width and/or band location of the tilted patterned image. Sometimes, more than one patterned image is formed on the wafer, then the measuring step can measure distance between bands and shifting of the bands with respect to a central axis of the wafer. The focus parameters can be focus tilt errors and/or focus offset. The focus parameters are used to perform calibration.

Abstract: A corrective filter for use in an optical system to correct a defect in a reticle and/or pellicle. The corrective filter may be positioned between a light source and the reticle, between the reticle and a wafer, or in combination with the reticle and/or pellicle. The invention provides a method of characterizing the optical properties of the corrective filter.

Abstract: An element control system (32) that reduces the effects on image quality of thermal distortions in an optical element (28) of a lithography system (10) includes a heat source (50) that primarily heats a non-illuminated region (44) of the optical element (28) to alter and/or control the shape of the illuminated part of the optical element (28). The heat source (50) directs heat to the non-illuminated region (44) and/or an illuminated region (42) to simplify and/or alter the shape of thermal distortions aberrations in the optical element (28).

Abstract: An improved corrective lens for copying pages of a book pressed flat upon a document support glass of a xerographic copying machine or document scanner. The corrective lens is shaped to fit in the space between the book pages to be copied and the document glass of the copier. The corrective lens has a pyramidal center extending into the crease of a typical book. The lens extends outwardly from the pyramidal center to form substantially flat side portions that hold the pages of the open book in place.

Abstract: To calibrate a front-to-backside alignment system a transparent calibration substrate with reference markers on opposite sides is used. A plane plate is inserted to displace the focal position of the alignment system from the top to bottom surface of the calibration substrate.

Abstract: In a pattern forming method, a photoresist layer is formed on the major surface of a to-be-processed substrate, then exposed to light to form a desired latent pattern thereon, and developed into a resist pattern. An abnormality in a size or shape of the resist pattern is detected, and is corrected. Correction is performed by irradiating the resist pattern with light of a wavelength which the photoresist layer can absorb, and changing the shape of the resist pattern.

Abstract: An exposure apparatus for lithographically transferring a pattern of an original onto a substrate to be exposed includes a first detector for detecting a position of an alignment mark on an exposure shot formed on the substrate, a second detector for detecting a local tilt adjacent to the alignment mark, the position of which is detected by the first detector, and a third detector for detecting a tilt of the exposure shot.

Abstract: One embodiment of the invention provides a system that uses pupil filtering to mitigate optical proximity effects that arise during an optical lithography process for manufacturing an integrated circuit. During operation, the system applies a photoresist layer to a wafer and then exposes the photoresist layer through a mask. During this exposure process, the system performs pupil filtering, wherein the pupil filtering corrects for optical proximity effects caused by an optical system used to expose the photoresist layer.

Abstract: A measurement method of measuring wavefront aberration of a projection optical system in a projection exposure apparatus for projecting a reticle pattern onto a substrate via the projection optical system. The method includes a measurement step of measuring intensity of a light beam having passed through the projection optical system and a phase shift pattern at a plane conjugate to a pupil plane of the projection optical system or a plane spaced apart from the phase shift pattern enough to separately detect respective rays emerging from plural points of the pupil plane, when the phase shift pattern set near an image plane or object plane of the projection optical system for forming an image of a pattern is scanned in one or a plurality of directions perpendicular to an optical axis of the projection optical system. The method also includes a signal processing step of calculating the wavefront aberration of the projection optical system on the basis of a measurement result of the measurement step.

Abstract: An exposure apparatus (PE1) and exposure method for use in photolithographically manufacturing devices such as semiconductor devices, image pickup devices, liquid crystal display devices and thin film magnetic heads. The apparatus is capable of transferring onto a substrate (W) the image of a pattern on a reticle (R) and includes a light source (2) capable of supplying an exposure energy beam (IL) with a wavelength under 200 nm, and an illumination optical system arranged to receive the exposure energy beam from said light source. The illumination optical system is designed to guide the exposure energy beam to the reticle. The apparatus also includes a projection optical system (PL) arranged between the. reticle and the substrate. The projection optical system is capable of forming an image of the reticle pattern onto the substrate based on the exposure energy beam passing through the reticle.

Abstract: An exposure apparatus for projecting and exposing through a projection optical system a transfer pattern formed on a master onto a substrate placed on a movable stage. The apparatus includes a mark placed on the movable stage and imparting a phase difference to incident light, based on an incident position, and then outputting the light, an image reception section, wherein the mark is imaged on the image reception section, using light of an exposure wavelength through the projection optical system, and a data processing section for calculating an imaging performance of the projection optical system on the basis of image data obtained by the image reception section.

Abstract: A stage assembly (10) for moving and positioning a device (26) is provided herein. The stage assembly (10) includes a stage base (12), a stage (14), a stage mover assembly (16), and a reaction assembly (18). The stage mover assembly (16) moves the stage (14) along an X axis and along a Y axis relative to the stage base (12). The reaction assembly (18) is coupled to the stage mover assembly (16). Uniquely, the reaction assembly (18) reduces the reaction forces created by the stage mover assembly (16) in three degrees of freedom that are transferred to the stage base (12). As provided herein, the reaction assembly (18) includes a first reaction mass (88) and a second reaction mass (90) that move independently along the X axis, along the Y axis and about a Z axis. With this design, stage mover assembly (16) has less influence upon the position of the stage base (12). These features allow for more accurate positioning of the device (26) by the stage assembly (10) and better performance of the stage assembly (10).

Abstract: A wafer exposure apparatus includes a special wafer cooling unit, namely, an air showerhead, for controlling the temperature of a wafer which is to be transferred from a wafer pre-alignment system to a wafer stage of photolithography exposure equipment. The wafer which has been heated in the course of being transferred from a spin coater to the wafer pre-alignment system, and may be further heated by sensors of the wafer pre-alignment system, is cooled to the same temperature as that of a wafer stage. Accordingly, a thermal equilibrium may be rapidly established between the wafer and the wafer stage when the wafer is transferred to the wafer stage. Accordingly, excessive thermal expansion of the wafer caused by a difference in temperature between the wafer and the wafer stage is prevented. Therefore, an excessive error in aligning the wafer with the optics of the photolithography exposure equipment can be prevented.

Abstract: A fabrication method for a projection optical system is capable of easily determining the corrected surface form as a desired continuous surface provided to a correcting member for correcting residual aberration. The fabrication includes: a measurement step of measuring aberration remaining in the projection optical system; a hypothesis step of hypothesizing a corrected surface form to be provided to the correcting member based on predetermined functions; a calculation step of calculating wavefront information of a light beam which passes through each of a plurality of regions on the correcting member having the corrected surface form hypothesized in the hypothesis step; and an evaluation step of evaluating the remaining aberration in the projection optical system when the hypothesized corrected surface form hypothesized in the hypothesis step is provided to the correcting member based on the measurement result in the measurement step and on the wavefront information calculated in the calculation step.

Abstract: A system and method for improving line width control in a lithography device are presented. Electromagnetic energy is emitted from an illumination source and passed through illumination optics. The illumination optics include a partial coherence adjuster having a first and second optical element. The first optical element is used for changing the partial coherence of incident electromagnetic energy in a predetermined manner to compensate for horizontal and vertical line biases of the lithography device. The second optical element is used for changing the angular distribution of electromagnetic energy incident upon the first optical element. Together, the two optical elements are used to vary the partial coherence of the electromagnetic energy emitted by the illumination source, as a function of illumination field position, and improve line width control. Adjustment of the second optical element allows for correction of time-dependant line width variances.

Abstract: An exposure method for exposing a pattern formed on a reticle onto an object includes a flatness measurement step for measuring the flatness of the object and storing the information obtained, a position measurement step for measuring positions at plural points on the object, and a changing step for changing at least one of the position and tilt of the object on the basis of the information obtained by the flatness measurement step, and information on the position obtained by the position measurement step.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern formed a mask onto an object to be exposed, a correction optical element, provided between the mask and the projection optical system, for reducing a deformation of the pattern, and a detector of an oblique light projection system, provided at a side of a pattern surface of the mask, for detecting a surface shape of the mask through the correction optical element.