Abstract: An in-situ interferometer includes an image modifying optic that produces light ray bundles. The light ray bundles are projected onto a reticle with a plurality of measurement fiducials encoded onto a face of the reticle. The measurement fiducials are exposed onto a sensing plane and their locations measured. Aberrations in the projection system are determined from the measurements of the exposed reticles.

Abstract: A computer system comprises a first computer into which target information that an optical apparatus is to achieve is inputted and a second computer that determines the specification of a projection optical system based on the target information received from the first computer via a communication path with using a wave-front aberration amount, which the projection optical system is to satisfy, as a standard. Therefore, in the process of making the projection optical system, higher-order components of the aberration as well as lower-order components can be simultaneously corrected by adjusting the projection optical system based on the result of measuring the wave-front aberration to satisfy the specification, so that the making process becomes simpler. Furthermore, the target that the exposure apparatus is to achieve is securely achieved due to the projection optical system.

Abstract: A method of measuring aberration of a projection optical system. The method includes the steps of imaging a test pattern through the projection optical system, and measuring a potential deviation amount of the image of the test pattern and measuring aberration of the project optical system on the basis of the positional deviation amount. The measuring step includes a process of determining a coefficient of a particular Zernike term and a process of changing a position or a shape of a region on a pupil plane of the projection optical system before light from the test pattern passes therethrough, in accordance with the particular Zernike term.

Abstract: A high-performance projection exposure apparatus and method which can adjust optical characteristics which are rotationally asymmetric with respect to the optical axis of projection optical system and which remain in the projection optical system. In exemplary embodiments, the projection exposure apparatus includes an illumination optical system, a projection optical system and a plurality of optical elements. The illumination optical system illuminates a first object, and the projection optical system projects an image of the first object onto a second object under a predetermined magnification. The optical elements are set between the first object and the second object, and has rotationally asymmetric powers with respect to an optical axis of the projection optical system. Consequently, the optical elements can correct an optical characteristic rotationally asymmetric with respect to the optical axis of the projection optical system remaining in the projection optical system.

Abstract: A device for exposure of an object surface having a predetermined shrinkage rate during a baking process of the object. The device includes an optical system having a light source irradiating light towards a target location. A filter is provided between the target location and the light source. The filter has a transmission rate that is adjustable to at least three different levels and which passes light from the light source therethrough.

Abstract: A scanning exposure apparatus includes an illumination optical system for illuminating a pattern on a mask using arc-shaped illumination light, a projection optical system for projecting the pattern on the mask illuminated by the illumination optical system onto a plate, a mask stage for scanning the mask, a plate stage for scanning the plate, the scanning exposure apparatus scanning the mask stage and plate stage synchronously relative to the projection optical system, a mask support mechanism for supporting a periphery of the mask, and a mask stage tilt mechanism for arranging the pattern in an area illuminated by the arc-shaped illumination light in an object-surface-side focal plane of the projection optical system, wherein the mask deforms due to its own weight from the peripheral supported.

Abstract: A method includes steps of exposing each of first shot regions on a substrate to a plurality of first marks aligned at a predetermined interval via a master and a projection optical system, and exposing each of second shot regions on the substrate to a plurality of second marks aligned at the predetermined interval via the master and the projection optical system. The first and second shot regions are arranged so as to make positions of a plurality of transferred first and second marks on the substrate correspond to each other, and the number of the transferred first marks in the first shot region being larger than the number of the transferred second marks in the second shot region. In addition, a distortion amount of the projection optical system is calculated based on a positional difference measured for the transferred first and second marks which correspond to each other.

Abstract: A measurement system configured to measure wave front aberrations of a projection system, as well as a lithographic apparatus including such a measurement system, is provided wherein the measurement system includes a diffractive element and structure configured to increase the pupil filling of the radiation in the pupil of the projection system, both movable into the projection beam between a radiation system and the projection system, and a sensor module configured to sense radiation that has traversed the projection system to measure wave front aberrations of the projection system.

Abstract: An exposure apparatus includes a measurement device for measuring a distortion of an image of a reticle formed on a substrate by scanning exposure, a calculation device for calculating a position compensation parameter for each distortion, by separating the measured distortion into a symmetrical component and an asymmetrical component, and a control device for controlling scanning of either the reticle or the substrate based on the position compensation parameter calculated by the calculation device.

Abstract: A projection exposure apparatus includes an illumination optical system for illuminating a pattern formed on a first object, with light, a projection optical system for projecting the pattern of the first object, illuminated by the illumination optical system, onto a second object for exposure of the same with the pattern, a main system including the illumination optical system and the projection optical system, and an interferometer for use in measurement of an optical characteristic of the projection optical system and being mounted on the main system.

Abstract: A reticle consisting of a 2-dimensional array of standard overlay targets is exposed several times onto a photoresist coated silicon wafer using a photolithographic scanner. Next, the overlay targets are measured for placement error using a conventional overlay metrology tool. The resulting overlay error data is then fed into a software program that generates the lens contribution to the intra-field error map for the photolithographic projection scanning system.

Abstract: Provided are systems and methods for overcoming optical errors occurring from reticle and other hardware usage in a semiconductor fabrication apparatus. The systems and methods minimize optical errors, such as those resulting from gravitational sag on a reticle or mask, for a pattern being projected onto a wafer. The reduced errors allow larger reticles and masks to be used—while maintaining optical accuracy; and also improve optical budget management.

Abstract: A device manufacturing method according to one embodiment of the invention includes positioning a reflective patterning structure to reflect at least a portion of a beam of radiation as a patterned beam of radiation having a pattern in its cross-section. The method also includes using a projection system to project the patterned beam of radiation to form an image on a target portion of a layer of radiation-sensitive material. Positioning includes at least one among shifting and tilting a nominal reflective surface of the reflective patterning structure with respect to a nominal object plane of the projection system according to a distortion value.

Abstract: An exposure apparatus has a projection optical system for projecting a pattern onto a substrate. The projection optical system includes a correction lens for correcting optical characteristics thereof. The apparatus includes a driving unit which drives the correction lens to a target position, a monitor unit which monitors a positional displacement of the correction lens from the target position during exposure of the substrate, and a control unit which controls a process during or after the exposure on the basis of a monitoring result obtained by the monitor unit.

Abstract: A method and system are provided for printing a pattern on a photosensitive surface using a spatial light modulator (SLM). An exemplary method includes defining two or more exposure areas on the photosensitive surface, the exposure areas overlapping along respective edge portions of the exposure areas to form an overlap zone therebetween. Two or more exposure areas are exposed to print an image therein, the exposing extending through the overlap zone. The exposing within the overlap zone is then attenuated.

Abstract: An exposure system. The exposure system includes a compensation unit and an exposure device. The compensation unit receives at least one adjustment value of a corresponding equipment parameter, and compensates a corresponding overlay parameter according to the adjustment value and an adjustment formula corresponding to the equipment parameter. The exposure device performs overlay and exposure processes on a wafer using the compensated overlay parameter.

Abstract: A scanning exposure apparatus is provided that is capable of increasing the overlay accuracy. Every time a reticle is exchanged, a direction overlay correction table is updated. A control device for the exposure apparatus corrects the target positions (target locus) of a wafer stage on the basis of the direction overlay correction table.

Abstract: There is to provide a mask including a transparent member at a side of a surface of a base, a pattern being formed on the surface, and a correction part for correcting a change in an optical path of the transparent member.

Abstract: A projection lens (3), in particular for microlithography, is provided with an object plane (7), with an image plane (9), with a lens arrangement (4) and with at least one gas chamber filled with gas or through which gas flows. The gas chamber is constructed as an approximately plane-parallel manipulation chamber (13). The refractive index can be varied in the manipulation chamber (13) by pressure changes and/or changes in gas composition.

Abstract: In a reflective lithographic projection apparatus, shifts in the image of a pattern of a mask in the scanning direction caused by variations in the position of the pattern surface of the mask along the optical axis are corrected by shifting of the relative position of the mask and/or the substrate in the scanning direction. Correction of the image rotation error may also be accomplished by rotation of the relative positions of the mask and/or the substrate about the optical axis. Variations in the position of the pattern surface of the mask along the optical axis may be determined by interferometers upon installation of the mask to the lithographic projection apparatus. The variations may be mapped and stored to provide control of the lithographic projection apparatus.

Abstract: Lens distortion correction is characterized by obtaining a correction parameter by using the difference between the latest QC data used when exposing a overlaying layer and the latest QC data used when exposing a overlaid layer.

Abstract: There is disclosed aberration measuring method of a projection optical system comprising collectively irradiating the finite region of the photomask in which a diffraction grating is formed with the illuminating light emitted from secondary light source having point sources, projecting 0th-order and 1st-order diffracted lights to first and second measurement planes conjugated with the secondary light source by using a projection optical system, respectively, the 0th-order and 1st-order diffracted lights being passed through the photomask, measuring a relation of projected positions in the first and second measurement planes between the 0th-order diffracted light and 1st-order diffracted light of the light emitted from one arbitrary point source, respectively, obtaining lay aberration concerning the light emitted from the point source on the basis of the obtained two relations of projected positions.

Abstract: For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens.

Abstract: To reduce and prevent local field anomalies created localized thinning of the coating of optical elements in the apparatus. The projection system is flood exposed to an intense beam of radiation for a substantial period of time. As the rate of thinning of the coating decreases with time, a uniform coating results.

Abstract: A projection system includes at least one projection device configured to receive a beam of radiation coming from a first object and project the beam to a second object. The projection system further includes a sensor configured to measure a spatial orientation of the at least one projection device and a processing unit configured to communicate with the at least one sensor. The processing unit is configured to communicate with a positioning device configured to adjust the position of at least one of the first object and the second object based on the measured spatial orientation of the at least one projection device.

Abstract: An assembly according to an embodiment of the invention includes a sensor for determining at least one of tilt and height of a surface of a substrate in a lithographic apparatus. The substrate is moveable along at least one path substantially parallel to the surface of the substrate with respect to the sensor. The lithographic apparatus has an exposure scanning direction and the assembly is arranged to move the substrate relative to the sensor along the at least one path and to provide measurement data about the at least one of tilt and height along the at least one path. The assembly includes a memory configured to store the measurement data for use during a later exposure of the substrate by the lithographic apparatus. The at least one path of the substrate is at least partly at an angle to the exposure scanning direction.

Abstract: A light producing apparatus for irradiating a beam from a light source to a target to produce light having a wavelength different from the beam includes a first condensing optical system for condensing the beam from the light source, and an imaging optical system for imaging onto the target under a demagnification a condensing point of the beam by the first condensing optical system.

Abstract: An optical magnification adjustment system being capable of minutely correcting magnification. A first lens 1 of plano-convex is installed on the side of an object surface 5, and a second lens 2 of concave-plano is installed on the side of a formed image surface 7. By controlling the center space d between the first lens and the second lens, the image is enlarged or reduced. The radii of curvature R2 and R3 of the convex surface of the first lens and the concave surface of the second lens are respectively set according to the following equations. R2=(1−n1)/&phgr;2 R3=(n2−1)/&phgr;3 where, &phgr;2 and &phgr;3 represent optical power, and n1 and n2 represent refraction indexes, respectively.

Abstract: An exposure apparatus to be used with an excimer laser as a light source includes an optical system disposed along a path of excimer laser light, a chamber for accommodating the optical system therein and having an inside space being able to be replaced by a predetermined gas, a gas circulation mechanism having a gas circulation path for connecting a gas discharging port for discharging a gas from the chamber and a gas supplying port for supplying a gas into the chamber, and a switching device for selectively using plural purifiers disposed in the gas circulation path.

Abstract: A reticle consisting of a 2-dimensional array of standard overlay targets is exposed several times onto a photoresist coated silicon wafer using a photolithographic scanner. Next, the overlay targets are measured for placement error using a conventional overlay metrology tool. The resulting overlay error data is then fed into a software program that generates the lens contribution to the intra-field error map for the photolithographic projection scanning system.

Abstract: Disclosed is an optical system having a plurality of optical elements, for use in an optical instrument or a projection exposure apparatus, arranged to maintain a best optical performance by controlling a relative position of the plurality of optical elements. The optical system includes a reference mirror, a first measuring system for measuring a relative position, with respect to the reference mirror, of a first optical element among the plurality of optical elements and/or a first target mirror disposed so that a relative position thereof with respect to the first optical element is kept substantially unchanged, and a second measuring system for measuring a relative position, with respect to the reference mirror, of a second optical element among the plurality of optical elements and/or a second target mirror disposed so that a relative position thereof with respect to the second optical element is kept substantially unchanged.

Abstract: An exposure system includes, (a) an exposure apparatus, and (b) a displacement correction apparatus having a curvature information storage unit configured to store curvature information of a reticle; a displacement information calculation unit configured to calculate displacement generated in the reticle being fixed on a reticle stage of an exposure apparatus based on the curvature information; and a correction information calculation unit configured to calculate correction information for correcting a projection lens of the exposure apparatus based on the displacement.

Abstract: An exposure system. The exposure system includes a compensation unit and an exposure device. The compensation unit receives at least one adjustment value of a corresponding equipment parameter, and compensates a corresponding overlay parameter according to the adjustment value and an adjustment formula corresponding to the equipment parameter. The exposure device performs overlay and exposure processes on a wafer using the compensated overlay parameter.

Abstract: An exposure method comprising measuring a position distribution, in an optical axis direction of the optical system, on a measurement area surface of the wafer which is not irradiated with the exposure light, computing a tilt component and a curved component of the measurement area surface on the basis of the measured position distribution, obtaining a leveling amount by which the measurement area surface is made to become orthogonal to the optical axis direction, on the basis of the tilt component, obtaining an adjustment amount for an imaging characteristic of the optical system on the basis of the curved component, and irradiating the measurement area with the exposure light on the basis of the obtained leveling amount and adjustment amount while the measurement area surface and the imaging characteristic are adjusted.

Abstract: A corrective filter for use in an optical system to correct a defect in a reticle and/or pellicle. The corrective filter may be positioned between a light source and the reticle, between the reticle and a wafer, or in combination with the reticle and/or pellicle. The invention provides a method of characterizing the optical properties of the corrective filter.

Abstract: A method of using critical dimension measurements to control stepper process parameters is disclosed. In one illustrative embodiment, the method comprises forming a masking layer above a process layer, the masking layer having a plurality of features formed therein, measuring at least one critical dimension of a plurality of features positioned within at least one exposure field of a stepper exposure process used in forming the features, and determining a tilt of the masking layer within at least one exposure field based upon the measured critical dimensions of the plurality of features. In one illustrative embodiment, the system comprises a metrology tool adapted to measure at least one critical dimension of a plurality of features in a masking layer and a controller for determining a tilt of the masking layer based upon the measured critical dimensions of said plurality of features.

Abstract: A device manufacturing method is disclosed in which the aberration of the projection system of a lithographic projection apparatus is obtained in terms of the Zernike expansion. The field distribution of displacement error and focal plane distortion of the projected image are calculated on the basis of the Zernike aberration and sensitivity coefficients which quantify the relationship between Zernike aberration components and the error in the image. A calculation is then performed to determine the compensation to apply to the apparatus in order to minimize the error in the image. The compensation is then applied to the apparatus. The compensation may comprise increasing one component of aberration of the apparatus in order to decrease the effect of another aberration, such that, on balance, the image quality as a whole is improved.

Abstract: Apparatus and methods for reducing optical distortion in an optical system by thermal means are disclosed. The apparatus includes a heating/cooling system spaced apart from and in thermal communication with an internally reflecting surface of a refractive element in the optical system. The heating/cooling system is adapted to create a select temperature distribution in the refractive optical element near the internally reflecting surface to alter the refractive index and/or the surface profile in a manner that reduces residual distortion.

Abstract: A scan type projection exposure apparatus which includes an illumination optical system for forming a slit-shaped illumination area on a pattern on a mask by using illuminating light, and a projection optical system for forming an image of a portion of the pattern in the illumination area on a substrate, includes: a mask stage which moves at least in one direction while holding the mask; a substrate stage which moves two-dimensionally while holding the substrate; a control system for synchronously scanning the mask stage and the substrate stage; and an image forming performance adjusting system for adjusting image forming performance of the projection optical system and having a component placed in an area through which the illuminating light incident from the illumination area on the mask to the projection optical system does not pass.

Abstract: A method that adjusts an optical apparatus that guides a radiation from a first surface to a second surface includes a number of steps, for example. A first step measures an aberration of the optical apparatus having a plurality of optical elements and at least one correction element. A second step calculates, based on a measurement result of the first step, a surface shape that the correction element should have, the aberration of the optical apparatus being a predetermined value when the correction element has the surface shape that the correction element should have. A third step removes the correction element from the optical apparatus and machines the correction element so that the surface shape of the correction element coincides with the surface shape calculated in the second step. A fourth step returns the correction element machined in the third step into the optical apparatus.

Abstract: A projection optical system having six reflecting mirrors for projecting a reduced image of a first surface on a second surface comprises a first catoptric imaging optical system to form an intermediate image of the first surface and a second catoptric imaging optical system to form an image of the intermediate image on the second surface. The first catoptric imaging optical system includes a pair of convex reflecting mirrors arranged to be opposed to each other.

Abstract: An exposure apparatus includes a projection optical system of catadioptric type, and an optical element disposed on a reciprocating light path of the projection optical system, the optical element being movable to correct at least one of spherical aberration, astigmatism, and curvature of field of the projection optical system.

Abstract: A projection exposure apparatus includes an illumination optical system for illuminating a pattern of a reticle with laser light from a continuous emission excimer laser, a projection optical system projecting the illuminated pattern onto a substrate, an adjusting device for adjusting an optical characteristic of the projection optical system in accordance with a change in wavelength of the laser, and a wavelength stabilizing device for stabilizing the wavelength of the laser light when the adjustment of the optical characteristic of the projection optical system by the adjusting device is insufficient.

Abstract: The exposure apparatus comprises: a barometer for detecting air pressure, a lens driving unit for driving a lens of a projection optical system, a light-source-wavelength changing unit for changing a wavelength of an exposure light source, and a stage driving unit for driving a wafer stage in the optical-axis direction. The apparatus can correct an aberration caused by a change in air pressure by utilizing the lens driving unit, light-source-wavelength changing unit, and stage driving unit. During a shot of an exposure of the exposure apparatus, the lens driving unit and/or the stage driving unit are employed to correct the aberration. In the non-exposure state (shot interval), the light-source-wavelength changing unit and/or the lens driving unit as well as the stage driving unit are employed to correct the aberration.

Abstract: An exposure method includes the steps of acquiring information of an alignment mark formed on an object to be exposed, by changing a value of a device parameter, the information being used for an alignment between a reticle and the object, the reticle forming a circuit pattern to be transferred to the object, and the value being able to be set in an exposure apparatus, determining the value of the device parameter of the exposure apparatus based on the information acquired in the acquiring step, and transferring the pattern onto the object using the exposure apparatus that sets the value of the device parameter, which has been determined.

Abstract: Aberrations in an optical system can be detected and measured using a method comprised of a test target in the object plane of a projection system and imaging a photoresist film with the system. The test target comprises at least one open figure which comprises a multiple component array of phase zones, where the multiple zones are arranged within the open figure so that their response to lens aberration is interrelated and the zones respond uniquely to specific aberrations depending on their location within the figure. This is a unique and new method of detecting a variety of aberration types including coma, spherical, astigmatism, and three-point through the exposure of a photoresist material placed in the image plane of the system and the evaluation of these images.

Abstract: A reaction mass and an actuator are used to reduce unwanted vibrations of an optical element in the projection system of a lithographic projection apparatus. The reaction mass may be mechanically connected only to the optical element or may be compliantly mounted to the projection system frame.

Abstract: A method for translating a spatial light modulator (22) to provide dithering comprises the steps of: providing a support (11) have a high degree of flexibility; rigidly attaching an outer portion (14) of the support to a nonmoving base; attaching an inner web (12) of the support to the outer portion by means of flexible members (16); wherein the support, the outer portion, the inner web, and the flexible members are located in a first plane; wherein the flexible members allows motion of the inner web in only one dimension of the first plane; attaching a piezoelectric device (18) to a first end of the inner web; energizing the piezoelectric device to move the inner web in a positive direction in the one dimension; attaching a spring (20) to a second end of the inner web; and wherein the spring moves the inner web in a negative direction in the one dimension when the piezoelectric device is deactivated.

Abstract: An optical magnification adjustment system being capable of minutely correcting magnification. A first lens 1 of plano-convex is installed on the side of an object surface 5, and a second lens 2 of concave-plano is installed on the side of a formed image surface 7. By controlling the center space d between the first lens and the second lens, the image is enlarged or reduced. The radii of curvature R2 and R3 of the convex surface of the first lens and the concave surface of the second lens are respectively set according to the following equations.

Abstract: A method according to one embodiment of the invention may be used in determining relative positions of developed patterns on a substrate (exposed e.g. using the step mode). Such a method uses reference marks which are located within or even superimposed on device patterns. Also disclosed is a mask of a lithographic projection apparatus including reference marks that may be used in such a method.