Abstract: An illumination optical system for illuminating a reticle using light from a light source includes an illumination-light generating mechanism for generating a light amount distribution on a plane that has a substantially Fourier conversion relationship with the reticle while making variable a ratio of a light amount between a first area and a second area different from the first area, the first and second areas being on the plane.

Abstract: A projection exposure apparatus for microlithography has a light source, an illumination system, a mask-positioning system and a projection lens. The latter has a system aperture plane and an image plane and contains at least one lens that is made of a material which has a birefringence dependent on the transmission angle. The exposure apparatus further has an optical element, which has a position-dependent polarization-rotating effect or a position-dependent birefringence. This element, which is provided close to a pupil plane of the projection exposure apparatus, compensates at least partially for the birefringent effects produced in the image plane by the at least one lens.

Abstract: In a step S1, an excimer laser control unit sets a central wavelength command value, an integral spectrum distribution command value, and an exposure pulse number in a laser internal control unit. In a step S2, the laser internal control unit receives the central wavelength command value, the integral spectrum distribution command value, and the exposure pulse number from the excimer control unit, and executes an actual exposure when an exposure command is received. In a step S3, the laser internal control unit, after executing exposure, measures the central wavelength of the pulse and the spectral distribution, and corrects any discrepancy between the actually measured central wavelength and the central wavelength command value by outputting a drive command to the narrow-band module so that the central wavelength of the succeeding pulse substantially matches the central wavelength command value. In a step S4, spectral distribution data is integrated with each exposure.

Abstract: A predictive method is used to compensate for intermediate batch sensitivities which inevitably occur during resist batch changeover. The compensation is applied to historical dose levels to arrive at a new dose level estimating an optimum dose. When the system discovers that a new batch of resist is loaded to a tool, historical data is used to calculate a reference dose for each tool. A batch factor is continuously calculated and using historical data along with the batch factor, a dose adjustment is made to maintain proper image size.

Abstract: A projection exposure apparatus includes a continuous emission excimer laser for providing laser light having a predetermined wavelength, an illumination optical system for illuminating a pattern of a reticle with laser light having the predetermined wavelength, a projection optical system for projecting the illuminated pattern of the reticle onto a substrate, wherein the projection optical system is provided by a lens system made of a substantially single glass material, a laser for injecting light having the predetermined wavelength into a resonator of the continuous emission excimer laser, a wavemeter for measuring the wavelength of the laser light from the continuous emission excimer laser, and a changing device for changing a resonator length of the continuous emission excimer laser on the basis of a signal from the wavemeter so that the wavelength of the laser light from the continuous emission excimer laser becomes equal to the predetermined wavelength.

Abstract: The energy amount of the energy beam passing through the illumination optical system is detected with the first photosensor, whereas the energy amount of the energy beam EL passing through at least a portion of the projection optical system PL is detected. And in accordance with the detection results, the main controller controls the exposure amount provided on the substrate during exposure. In the case the transmittance of the energy beam in the optical path from the first photosensor to the substrate surface (image plane) changes, this change is substantially precisely reflected to a value obtained by dividing the detection value of the second photosensor by the detection value of the first photosensor and normalizing the result. Accordingly, the transmittance change of the optical system in the optical path can be substantially cancelled out, allowing an exposure amount control with high precision.

Abstract: A light emitting device according to the present invention comprises a light source, a condensing mirror for condensing light from the light source, a light intensity controlling unit for controlling light intensity of the condensed light, a collimator lens provided from the light intensity controlling unit at a focal distance of the collimator lens, and an integrator lens, wherein light emitted from the collimator lens is overlaid on an entire incident surface of the integrator lens.

Abstract: A deformable holder, system, and process where long range errors (any of lithography, metrology, or overlay errors) between the image of a mask and an existing pattern on a wafer from a number of potential sources are corrected. The long range errors are determined using either a through-the-lens alignment metrology system or an around-the-lens metrology system. Deformation values are determined to compensate for the longe range errors. The deformation values are determined by either solving simultaneous equations or by finite-element linear-stress-analysis (FEA). The mask or wafer is then distorted, in-plane, by an amount related to the determined deformation values using an actuator such an a piezoelectric ceramic to push or pull the mask or wafer to substantially realign the projected image of the mask and the existing pattern on the wafer.

Abstract: A method for the maskless exposure of light-sensitive layers of an object for the micropatterning thereof, is disclosed. In one embodiment, at least one surface light modulator with an associated optical arrangement is irradiated by means of a light source and image fields. Individual structural elements, groups of structural elements or parts thereof are imaged with a predetermined exposure dose on the light-sensitive layer in accordance with the respective driving state of the at least one surface light modulator, the predetermined exposure dose being divided between a plurality of exposure operations. The exposure dose for the individual exposure operations is chosen in such a way that, proceeding from a predetermined minimum exposure dose, the exposure dose is increased for each exposure operation compared with the respective preceding exposure operation. The exposure dose for the last exposure operation is more than 50% of the predetermined exposure dose.

Abstract: A projection exposure apparatus includes a projection optical system for projecting a transfer pattern of a first object onto a second object, a first illumination system for performing illumination under a first illumination condition, wherein the transfer pattern of the first object illuminated under the first illumination condition is projected onto the second object through the projection optical system, a second illumination system for performing illumination under a second illumination condition, a light intensity detector, and an information processing system operable, as a particular pattern being illuminated by the second illumination system under the second illumination condition is imaged by the projection optical system, to measure a wavefront aberration of the projection optical system on the basis of detection of a light intensity distribution of an image of the particular pattern made through the light intensity detector.

Abstract: An exposure apparatus includes an illumination optical system that includes an optical integrator for forming a secondary light source from the light, and a variable stop arranged at or near a position where the secondary light source is formed, the diameter variable stop that defines a NA of the illumination optical system, a projection optical system that includes an aperture stop arranged at a position substantially optically conjugate with the variable stop, the aperture stop defining a numerical aperture of the projection optical system, and a controller for controlling the aperture diameter of the variable stop as the aperture diameter varies so that an image of the secondary light source can fall within the aperture diameter of the aperture stop.

Abstract: An exposure apparatus radiates an exposure light beam from an exposure light source onto a reticle via an illumination optical system including a first fly's eye lens, a second fly's eye lens, a lens system, a blind, and a condenser lens system, and it projects an image of a pattern on the reticle onto a wafer via a projection optical system. An illumination characteristic is measured by using an evaluation mark plate on a reticle stage and a spatial image-measuring system provided for a wafer stage. The states of the second fly's eye lens and the lens system are adjusted by the aid of a driving unit on the basis of the measured value. A concentration filter plate, which is formed with a pattern of a predetermined transmittance distribution, is rotatably arranged in the vicinity of a conjugate plane with respect to an image plane between the second lens system and the blind. The angle of rotation of the concentration filter plate 51 is controlled so that the uneven illuminance is corrected.

Abstract: An aspect of the present invention provides simulation that includes dividing a surface of a substrate onto which light that is focused at an aperture angle by a projection lens is shone into a first region onto which all of the light strikes and a second region onto which a portion of the light strikes, calculating an intensity of the light shone onto the first region, and calculating an intensity of the light shone onto the second region.

Abstract: An exposure apparatus and method to expose an object with an illumination beam irradiated on a mask from a light source disposes an optical unit between the light source and an optical integrator of an illumination optical system to illuminate the mask with an illumination beam, of which an intensity distribution on a Fourier transform plane with respect to a pattern on the mask has an increased intensity portion apart from the optical axis relative to a portion of the intensity distribution on the optical axis.

Abstract: A photomask for exposure to optical near-field has a micro-aperture and is adapted to expose an object of exposure to light by using light seeping out from the micro-aperture. The photomask also has periodically arranged recesses or projections so as to uniformize the optical near-field intensity distribution in the micro-aperture.

Abstract: A spatial light modulator performs spatial light modulation of light produced by a light source. An image-side telecentric image forming optical system forms an image of a two-dimensional pattern of the light, which has been obtained from the spatial light modulation, on a photosensitive material. An axial air separation adjusting section is located between the image forming optical system and the photosensitive material. The axial air separation adjusting section alters an axial air separation between the image forming optical system and the photosensitive material and thereby adjusts a focusing point at the time of the formation of the image of the two-dimensional pattern of the light.

Abstract: There is disclosed an exposure control method in a lithography system having a resist coating and developing apparatus, a wafer transferring mechanism and an exposure control apparatus. The exposure control method in the lithography system includes the steps of transmitting data of temperature for heat-treating a resist film in the resist coating and developing apparatus to the exposure control apparatus; determining and controlling exposure time based on the temperature data; and exposing the resist film on a wafer which is moved or transferred by the wafer transferring mechanism during the determined exposure time.

Abstract: The present invention relates to an image-forming device for processing photosensitive media. The photosensitive media is of the type that includes microcapsules that encapsulate imaging material such as coloring material. The image-forming device includes a photobleaching system that is adapted to eliminate or minimize undesired coloration in a final print.

Abstract: An image in the form of image dots produced by one or more pixel generators is projected onto a light-sensitive material with a certain amount of light power over a certain length of exposure time. Each pixel generator is driven by a voltage of periodically alternating polarity which alternates between half-periods of negative voltage and half-periods of positive voltage, with the negative voltage and the positive voltage being equal in absolute magnitude. The exposure time for each image dot is allocated equally to the respective half-periods of negative and positive voltage.

Abstract: A cleaning system for removing contamination from at least a part of a surface of a component in a lithographic projection apparatus is disclosed. The cleaning system includes an electric field generator that generates an electric field to provide cleaning particles near the surface of the component.

Abstract: Disclosed is a projection optical system for projecting a pattern of a mask placed on an object plane, onto a substrate placed on an image plane. The projection optical system is arranged so that an intermediate image of the pattern formed on the mask, is formed between a third reflection surface and a fourth reflection surface. In accordance with a particular shape of the third reflection surface or with particular disposition, high-precision projection is ensured without enlargement in size of the whole system.

Abstract: An exposure apparatus includes an illumination optical system for illuminating a reticle with light from a light source, a projection optical system for projecting a pattern of the reticle onto an object to be exposed, wherein the illumination optical system includes a light integrator that includes plural elements each having an arc section, wherein a secondary light source formed near an exit surface of the element can be accommodated in the exit surface of the element, and wherein a ratio of a chord to a width of the arc section of the element is between 2.0 and 18.0.

Abstract: The memory unit stores the correlation of the positional change in the image planes of the projection optical modules in the focusing direction and the light quantity change. The image plane position determination unit finds the positional change value of the image planes of the projection optical modules based on the correlation information that is stored in the memory unit and the information on changes in the amount of light that is emitted to the projection optical modules. The compensation value calculating unit calculates the compensation value corresponding to the change in the amount of curvature in the image planes of the projection optical modules. The compensating unit compensates the change value in conformity with the compensation value. The focus compensation optical system is driven based on the change value that is compensated.

Abstract: A main controller sets an exposure control target value according to the transmittance of an optical system measured by means of a sensor prior to exposure or estimated by predetermined calculation, and exposure is controlled according to the set exposure control target value while a reticle pattern is being transferred onto a wafer through the optical system. Since the exposure energy provided to the image surface changes in a unit time per unit area in accordance with the transmittance of the optical system, the exposure control target value is set according to the transmittance of the optical system, and exposure is controlled according to the set control target value. Thus, exposure with a high precision is achieved without being influenced by the variation of the transmittance.

Abstract: A projection exposure apparatus includes a diaphragm controlling unit controlling one or more of an diaphragm, an iris diaphragm, and a relay lens system. In addition, the projection exposure apparatus also includes a line width calculator which calculates a bias, which is a difference between a line width in a dense part and a line width in an isolated part, based on information regarding a mask pattern, the wavefront aberration of a lens, the effective light source of an illumination optical system, the half-width of a laser, the temperature change in a projection optical system due to exposure, etc. When the bias is out of a tolerance range, the line width calculator calculates a correction value for the diaphragm of the projection optical system or a correction value for the effective light source of the illumination optical system in accordance with the bias which is to be corrected. Then, the diaphragm controlling unit is driven in accordance with the calculation results.

Abstract: A 1:1 laser projection system and method are provided for laser irradiating a semiconductor film. The method comprises: exposing a mask to a beam of laser light; projecting laser light passed through the mask by a factor of one; exposing the area of a semiconductor film to the projected laser light having a first energy density; exposing an area of semiconductor film to a lamp light having a second energy density; and, summing the first and second energy densities to heat the area of film. When the semiconductor film is silicon, the film heating typically entails melting, and then, crystallizing the film. In some aspects of the method, the lamp is an excimer lamp having a wavelength of less than 550 nanometers (nm), and the laser is an excimer laser having a wavelength of less than 550 nm. In some aspects, the lamp is mounted to expose the bottom surface of the film including an area underlying the area being laser irradiated.

Abstract: The projection aligner for transferring an image of a mask pattern of a mask onto an object to be exposed comprises a projection optical system that forms the image of the mask pattern onto the object, an expansion ratio determiner that measures lengths of the object in first and second directions and determines first and second expansion ratios, which are expansion ratios of the object in the first and second directions, respectively, based on those lengths, and a magnification controller that adjusts the magnification of the projection optical system to a value between the first and second expansion ratios.

Abstract: Methods and apparatus for enabling both isolated and dense patterns to be accurately patterned onto a wafer are disclosed. According to one aspect of the present invention, an illumination system that is suitable for use as a part of a projection tool includes an illumination source and an illuminator aperture. The illuminator aperture has a center point and an outer edge, and also includes a first pole and a second pole. The first pole is defined substantially about the center point, and the second pole is defined substantially between the first pole and the outer edge of the first pole. The illumination source is arranged to provide a beam to the illuminator aperture.

Abstract: An exposure amount control method includes steps of illuminating an original with exposure light, emitted from a light source, through one or more light intensity uniforming optical systems, so that a pattern of the original illuminated is projected and printed on a substrate, measuring, by use of a first illuminance sensor, and illuminance of the exposure light as branched at a light source of the or one of the light intensity uniforming optical systems which is closest to the original, controlling an exposure amount of the substrate on the basis of a measurement output of the first illuminance sensor, measuring, by use of a second illuminance sensor, an illuminance at a position substantially conjugate with the substrate, and calibrating an output of the first illuminance sensor on the basis of a measurement output of the second illuminance sensor.

Abstract: An image processing method to conduct an image processing on image signals indicating an image obtained through photographing by a photographing apparatus for generating image signals for output. The image processing method has a determining process to determine a content of image processing to be conducted on the image signals based on information about environment light in the course of photographing, information about flashlight in the course of photographing, and on at least one of information about zoom magnification in the course of photographing and information about ISO speed.

Abstract: During scanned exposure of target portions at the edge of the substrate, the position of an edge of the illumination field is changed so as to prevent or reduce radiation falling onto the substrate table or to expose an L-shaped area. In this way the heat load on the substrate table can be reduced and dummy structures can fill a mouse bite without overlapping an alignment mark.

Abstract: An exposure apparatus comprising a light source which emits a light including a main light having a wavelength to expose a substrate and sub light having a different wavelength from that of the main light collaterally generated in accordance with an oscillation of the main light, a main optical system which introduces a light from the light source to the substrate via the mask, a light sensor having sensitivity to a wavelength including the main light, and a separation device disposed an a light path from the light source to the light sensor, the separation device separating the main light and the sub light.

Abstract: To provide an aligner capable of controlling a proper light exposure in accordance with an oxygen density and moisture density on an laser beam optical path, an aligner of the present invention is an aligner for illuminating a mask (or reticle) with the light emitted from a light source to expose an object to be exposed with the light reflected from the mask, which is provided with the following:

Abstract: One embodiment is a system for the development of a film includes an infrared light source and a visible light source. The system also includes at least one sensor operable to collect a first set of optical data from light associated the infrared light source and a second set of optical data from light associated with the visible light source. The system further includes a processor in communication with the at least one sensor, the processor operable to determine an image on the film in response to the first and second sets of optical data.

Abstract: A wafer or substrate alignment system for a lithographic apparatus, capable of exhibiting reduced tilt sensitivity, is presented herein. In particular, the substrate alignment system detects a position of a substrate relative to a position of a patterning device and comprises a source configured to generate an incoming optical beam, at least one grating, provided on the substrate, having a diffracting length, in which the at least one grating is configured to generate at least one diffraction order of constituent diffracted beams based on an interaction with the incoming optical beam over the diffracting length. The system further comprises an optical device, configured to image the at least one diffracted order on a sensor device, and includes aperture at a predetermined location to allow the constituent diffracted beams to pass through.

Abstract: A lithographic projection apparatus is disclosed. The apparatus includes a radiation system that includes a radiation source and an illumination system that supplies a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate support that supports a substrate, a projection system that projects the patterned beam onto a target portion of the substrate, an electrode, and a voltage source that applies an electric field between the radiation source and the electrode to generate a discharge between the radiation source and the electrode.

Abstract: An illumination device for scanning exposure apparatus for carrying out exposure even when a movable stage is being accelerated and decelerated. The apparatus includes an illumination-distribution varying device for temporarily varying the illumination distribution of an illumination unit that is performing the exposure, wherein the illumination-distribution varying device has a function for varying the temporary change of the illumination distribution in conformity with a pattern for driving the movable stage.

Abstract: An exposure apparatus, wherein light emitted from a relatively low output light source is selectively transmitted by a light path switching controller and mirrors to exposure units, amplifiers are provided near the exposure units, and the light from the light source is amplified there and then sent to the corresponding exposure units.

Abstract: A projection exposure apparatus with a small size and low cost suitable for repeated pattern exposure is disclosed. The apparatus comprises an illumination system which irradiates light to a mask including plural columns of a mask pattern for repeated exposure to a member to form plural columns of an exposure pattern, a projection system which projects light from the mask onto the member, an exposure stage which moves the member, and a mask stage which moves the mask. The light irradiation and step driving of the exposure stage for moving the member by a movement amount equal to n times a pitch of the columns of the exposure pattern are alternately performed. The mask is moved by a movement amount equal to n times a pitch of the columns of the mask pattern with step driving of the exposure stage in an early and later phases of the repeated exposure.

Abstract: A projection exposure apparatus for microlithography has a light source, an illumination system, a mask-positioning system and a projection lens. The latter has a system aperture plane and an image plane and contains at least one lens that is made of a material which has a birefringence dependent on the transmission angle. The exposure apparatus further has an optical element, which has a position-dependent polarization-rotating effect or a position-dependent birefringence. This element, which is provided close to a pupil plane of the projection exposure apparatus, compensates at least partially for the birefringent effects produced in the image plane by the at least one lens.

Abstract: A sensor is provided for identifying the type of discharge lamp mounted as the light source of an exposure apparatus, and at least one of an optical condition, power-source condition and cooling condition is set based upon the identification made. For example, an optical condition is changed by adjusting the zoom lens of an illuminating optical unit in dependence upon the type of discharge lamp. Alternatively, a power-source condition or discharge-lamp cooling performance is changed by setting the range of allowable power applied to the discharge lamp.

Abstract: Apparatus and methods for compensating for the movement of a substrate in a lithographic apparatus during a pulse of radiation include providing an optical structure configured to move a patterned projection beam incident on the substrate in synchronism with the substrate.

Abstract: An image reader for optically reading an image on an original and an image sensor unit for mounting to the image reader. The image sensor unit is provided with a shaft used for rotatably mounting the image sensor unit to an image sensor unit holding member of the image reader. This reduces the size of the image reader.

Abstract: A lithographic projection apparatus is disclosed. The apparatus includes a radiation system to transmit a beam of radiation emitted from a radiation source, and a support structure constructed to hold a patterning structure to be irradiated by the beam. A substrate holder is constructed to hold a substrate, and a projection system is constructed and arranged to project an irradiated portion of the patterning structure onto a target portion of the substrate. A first screen is positioned in a path of the beam between the radiation system and an optical element and a positive voltage is applied to the first screen to repel positively charged particles away from the optical element. A second screen is positioned in the path of the beam on at least one side of the first screen, and a negative voltage is applied to the second screen to repel negative particles away from the first screen.

Abstract: A lithographic projection apparatus is provided wherein an object situated in a pulsed beam of radiation has an electrode in its vicinity and a voltage source connected either to the electrode or to the object. This configuration can provide a negative voltage pulse to the object relative to the electrode. The beam of radiation and the voltage pulse from the voltage source are provided in phase or out of phase. In this way, the object is shielded against secondary electrons generated by radiation beam illumination.

Abstract: An illumination system comprises (a) a first optical element upon which a light beam impinges, where the first optical element has first raster elements that partition said light beam into light channels; (b) a second optical element that receives said light channels, where the second optical element has a second raster elements; (c) an object plane that receives said light channels via said second optical element; and (d) an exit pupil that is provided with an illumination via said object plane. The system is characterized by an assignment of a member of said first raster elements and a member of said second raster elements to each of said light channels to provide a continuous beam path from said first optical element to said object plane for each of said plurality of light channels. The assignment is changeable to provide an adjustment of said illumination in said exit pupil.

Abstract: It is an object of this invention to accurately correct an output variation due to a change in temperature of a photoelectric sensor. An exposure apparatus includes a photoelectric sensor (13, 15) for controlling exposure of a wafer, a memory (21) that stores the output variation characteristic of the photoelectric sensor (13, 15) with respect to the quantity of light with which the photoelectric sensor is irradiated, a calculator (22) that calculates the output variation amount of the photoelectric sensor (13, 15) on the basis of the quantity of the light with which the photoelectric sensor (13, 15) is irradiated, the energy per unit time of the light, and the output variation characteristic stored in the memory (21), and a compensator (23) that corrects an output from the photoelectric sensor (13, 15) on the basis of the output variation amount calculated by the calculator (22).

Abstract: A lithography system and method for cost-effective device manufacture that can employ a continuous lithography mode of operation is disclosed, wherein exposure fields are formed with single pulses of radiation. The system includes a pulsed radiation source (14), an illumination system (24), a mask (M), a projection lens (40) and a workpiece stage (50) that supports a workpiece (W) having an image-bearing surface (WS). A radiation source controller (16) and a workpiece stage position system (60), which includes a metrology device (62), are used to coordinate and control the exposure of the mask with radiation pulses so that adjacent radiation pulses form adjacent exposure fields (EF). Where pulse-to-pulse uniformity from the radiation source is lacking, a pulse stabilization system (18) may be optionally used to attain the desired pulse-to-pulse uniformity in exposure dose.

Abstract: A lithography system for forming geometric patterns on a workpiece is described herein. The lithography system may include a reflective liquid crystal display comprising an array of configurable pixels, a radiation source for directing radiation onto the reflective liquid crystal display, a projection system for reducing a radiation pattern reflected by the reflective liquid crystal display and projecting the reduced radiation pattern onto a workpiece, and a stage for holding the workpiece. The lithography system may be used to form geometric patterns on a substrate during semiconductor fabrication.

Abstract: The image display apparatus reads image data, which is recorded by a digital camera etc., from a recording medium etc.; sets an in-focus frequency spectrum threshold for in-focus determination according to the resolution (pixel count) and compressibility of the inputted image data; analyzes a frequency spectrum of the image data; and determines whether a location where frequency components whose levels are higher than the threshold exist in an image. The location having the most frequency components whose levels are higher than the threshold is determined as an in-focus location. If an in-focus location exists, a mark showing the in-focus location is displayed on a screen of a display device. If no in-focus location exists in the image, the image display apparatus performs display of warning information and/or a warning by sound, and prompts the user to confirm necessity of printing.