Abstract: Disclosed is a method of improving a measurement of a parameter of interest. The method comprises obtaining metrology data comprising a plurality of measured values of the parameter of interest, relating to one or more targets on a substrate, each measured value relating to a different measurement combination of a target of said one or more targets and a measurement condition used to measure that target and asymmetry metric data relating to asymmetry for said one or more targets. A respective relationship is determined for each of said measurement combinations relating a true value for the parameter of interest to the asymmetry metric data, based on an assumption that there is a common true value for the parameter of interest over said measurement combinations. These relationships are used to improve a measurement of the parameter of interest.

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

Abstract: A method for generating a mathematical model (MM) for positioning individual mirrors (204, 204?) of a facet mirror (200) in an optical system (500), e.g. in a lithography apparatus (100A, 100B). The method includes: a) providing (S701) target positions (SP) of the individual mirrors (204, 204?) with an adjustment unit (502), b) capturing (S702) actual measurement positions (MI) of the individual mirrors (204, 204?) with a measuring device (508), which is embodied as an interferometer, deflectometer and/or camera, and c) generating (S705) a mathematical model (MM) for positioning the individual mirrors (204, 204?) based on the captured actual measurement positions (MI) and the target positions (SP). In step c), a difference (EA) is formed (S703) between a respective actual measurement position (MI) and a respective target position (SP) and the mathematical model (MM) is generated (S705) based on the difference (EA) formed.

Abstract: A method of enhancing a layout pattern includes determining a vector transmission cross coefficient (vector-TCC) operator of an optical system of a lithographic system based on an illumination source of the optical system and an exit pupil of the optical system of the lithographic system. The method also includes performing an optical proximity correction (OPC) operation of a layout pattern of a photo mask to generate an OPC corrected layout pattern. The OPC operation uses the vector-TCC operator to determine a projected pattern of the layout pattern of the photo mask on a wafer. The method includes producing the OPC corrected layout pattern on a mask blank to create a photo mask.

Abstract: An exposure method includes reading data representing a relationship between a first parameter relating to an energy ratio between energy of first pulsed laser light having a first wavelength and energy of second pulsed laser light having a second wavelength longer than the first wavelength and a second parameter relating to a sidewall angle of a resist film that is the angle of a sidewall produced when the resist film is exposed to the first pulsed laser light and the second pulsed laser light, and determining a target value of the first parameter based on the data and a target value of the second parameter; and exposing the resist film to the first pulsed laser light and the second pulsed laser light by controlling a narrowed-line gas laser apparatus to output the first pulsed laser light and the second pulsed laser light based on the target value of the first parameter.

Abstract: A set of the pulses of light in a light beam is passed through a mask toward a wafer during a single exposure pass; at least a first aerial image and a second aerial image on the wafer based on pulses of light in the set of pulses that pass through the mask is generated during a single exposure pass, the first aerial image is at a first plane on the wafer and the second aerial image is at a second plane on the wafer, the first plane and the second plane being spatially distinct from each other and separated from each other by a separation distance along the direction of propagation; and a three-dimensional semiconductor component is formed.

Abstract: Embodiments described herein relate to methods of forming layers using maskless based lithography. In these embodiments, the methods implement ladders of dose change such that a geometric shape can be divided into overlaying sections. The overlaying sections can include a different dose of each section such that taper control can be achieved. The taper can be achieved by manipulating the geometry “mask data” into overlaying sections that are exposed by various doses controlled by pixel blending (PB) exposure techniques. To perform the methods described herein, a maskless lithography tool is used. The maskless lithography tool includes a controller that performs software based “mask data” manipulation.

Abstract: Embodiments disclosed herein reduce petal flare. A flare-suppressing image sensor includes a plurality of pixels including a first set of pixels and a second set of pixels. The flare-suppressing image sensor further includes plurality of microlenses, where each microlens is aligned to a respective one of the first set of pixels. The flare-suppressing image sensor further includes plurality of sub-microlens, where each microlens array is aligned to a respective one of the second set of pixels.

Abstract: An electronic component handler includes a tray having a pocket in which an IC device is placed, and a first device transport head that holds and transports the IC device to the pocket, wherein the first device transport head includes a light emitting portion that emits a light to the pocket, a light focusing portion that adjusts a spot diameter of the light emitted by the light emitting portion, and a light receiving portion that receives the light reflected by the pocket.

Abstract: A radiation measurement system (200) comprising an optical apparatus (205) configured to receive a radiation beam (210) and change an intensity distribution of the radiation beam to output a conditioned radiation beam (215), and a spectrometer (220) operable to receive the conditioned radiation beam and determine spectral content of the conditioned radiation beam. The radiation measurement system may form part of a lithographic apparatus.

Abstract: A semiconductor lithography projection exposure apparatus includes a sensor reference including reference elements. The apparatus also includes an optical element, which includes a main body comprising receiving elements receiving the reference elements. The optical element further includes a referential surface that is an optically active surface of the optical element. The reference elements are arranged to determine a position and an orientation of the optical element. A method includes aligning a sensor reference with respect to a referential surface in a semiconductor lithography projection exposure apparatus.

Abstract: A method for the exposure of image points of a photosensitive layer comprising a photosensitive material on a substrate by means of an optical system. The method including continuously moving the image points with respect to the optical system; and controlling a plurality of secondary beams by means of the optical system individually for individual exposures of each image point, whereby the secondary beams are put either into an ON state or into an OFF state, wherein a) secondary beams in the ON state produce an individual exposure of the image point assigned to the respective secondary beam and b) secondary beams in the OFF state do not produce any individual exposure of the image point assigned to the respective secondary beam; wherein, for the generation of image points with grey tones n>1, individual exposures are carried out by different secondary beams with individual doses D.

Abstract: A resin cassette for an additive manufacturing apparatus includes (a) a light transmissive window; (b) a circumferential frame connected to and surrounding the window, the window and frame together forming a well configured to receive a light polymerizable resin; and (c) a fluorophore layer in or on the window.

Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

Abstract: A detection system for an alignment sensor, and an alignment sensor and lithographic projection apparatus comprising such a detection system is disclosed. The detection system comprises at least one detection circuit; and a plurality of optical fiber cores for transporting a measurement signal to the at least one detection circuit. At least as subset of the plurality of optical fiber cores are selectively switchable between a detection state and a non-detection state, thereby defining a configurable detection spot.

Abstract: An optical assembly for an eye-tracking camera includes an aperture stop, a first optical surface, and a second optical surface. The optical assembly is configured to receive non-visible light reflected or scattered by an eye and to direct the non-visible light to an image sensor along an optical path, where the non-visible light is received from an optical combiner of an eye-tracking system. The first optical surface is disposed on the optical path and is configured to correct for field-independent optical aberrations induced by the optical combiner. The second optical surface is disposed on the optical path and is configured to correct for field-dependent optical aberrations induced by the optical combiner.

Abstract: In one example, an apparatus includes an extreme ultraviolet illumination source and an illuminator. The extreme ultraviolet illumination source is arranged to generate a beam of extreme ultraviolet illumination to pattern a resist layer on a substrate. The illuminator is arranged to direct the beam of extreme ultraviolet illumination onto a surface of a photomask. In one example, the illuminator includes a field facet mirror and a pupil facet mirror. The field facet mirror includes a first plurality of facets arranged to split the beam of extreme ultraviolet illumination into a plurality of light channels. The pupil facet mirror includes a second plurality of facets arranged to direct the plurality of light channels onto the surface of the photomask. The distribution of the second plurality of facets is denser at a periphery of the pupil facet mirror than at a center of the pupil facet mirror.

Abstract: An optical device includes an optical member having a plurality of first optical layers and a plurality of second optical layers having a refractive index different from that of the first optical layer in which the first optical layers and the second optical layers are laminated, and a layer thickness changing electrode that changes a thickness of the first optical layer in a lamination direction of the first optical layers and the second optical layers, in which the optical member is provided in a pair, and the pair of optical members is disposed to face each other through a gap, and a gap changing driver that changes a dimension of the gap.

Abstract: The optical inspection device is used for inspecting a planar object surface for the presence of particles and/or defects. A light source supplies light to the planar object surface of the object at a grazing angle. An image sensor receives light due to scattering from particles and defects on the object surface. The optical axis of the objective is at non-zero angles with the normal to the planar object surface and a direction or directions of specular reflection of the light from the light source by the planar object surface. A detection surface of the image detection device and the optical axis of the objective is in a Scheimpflug configuration. The light source and image sensor are located outside a space extending perpendicularly from the planar object surface, on opposite sides of that space. The image sensor comprises an objective and an image detection device. The device may further comprise a microscope or spectrometer to access the object surface through said space.

Abstract: An image forming apparatus includes: a photoconductor; an optical scanner configured to cause a plurality of light beams to scan simultaneously on a surface of the photoconductor; a pixel size calculator configured to calculate a pixel size corresponding to a scanning position of each of the light beams; a light-quantity value quantization converter configured to quantize a light-quantity value corresponding to the scanning position of each of the light beams; a storage configured to store conversion data for conversion from image density data into a light beam driving signal; a signal converter configured to perform, with the conversion data, conversion from the image density data into the light beam driving signal; a selector configured to select the conversion data, according to the pixel size calculator and the light-quantity value quantization converter; and a light source configured to emit the plurality of light beams, based on driving data obtained through conversion by a driving data converter with t

Abstract: There is provided a reflective image-forming optical system which is applicable to an exposure apparatus using, for example, EUV light and which is capable of increasing numerical aperture while enabling optical path separation of light fluxes. In a reflective imaging optical system (6) forming an image of a first plane (4) onto a second plane (7), the numerical aperture on a side of the second plane with respect to a first direction (X direction) on the second plane is greater than 1.1 times a numerical aperture on the side of the second plane with respect to a second direction (Y direction) crossing the first direction on the second plane. The reflecting imaging optical system has an aperture stop (AS) defining the numerical aperture on the side of the second plane, and the aperture stop has an elliptic-shaped opening of which size in a major axis direction (X direction) is greater than 1.1 times that in a minor axis direction (Y direction).

Abstract: Disclosed is a hinged MEMS and/or NEMS device with out-of-plane movement including a first portion and a second portion that is hinged so as to be able to rotate with respect to the first portion about an axis of rotation contained in a first mean plane of the device. The device also includes a hinging element that connects the first portion and the second portion and that is stressed flexurally and a sensing element that extends between the first portion and the second portion and that deforms during the movement of the second portion. Finally, the device includes two blades that extend perpendicularly to the mean plane of the hinge device and parallel to the axis of rotation, the blades being placed between the hinging element and the sensing element and connecting the first portion and the second portion and being stressed torsionally during the movement of the second portion.

Abstract: A method for reducing apparatus performance variation. The method includes obtaining (i) a reference performance (e.g., CD) of a reference apparatus (e.g., a reference scanner), (ii) a set of initial leading degrees of freedom selected from a plurality of degrees of freedom of a plurality of pupil facet mirrors of an apparatus (e.g., to be matched scanner) that is selected to reproduce the reference performance, and (iii) exposure data related to one or more parameters (e.g., CD, overlay, focus, etc.) of the patterning process indicating a performance of the apparatus based on the set of initial leading degrees of freedom; and determining a matching pupil of the apparatus based on the set of initial leading degrees of freedom and the exposure data such that the matching pupil reduces a difference between the performance of the apparatus and the reference performance.

Abstract: The present invention provides a lighting system, including at least one light source, a depolarization element and a light homogenization element. The at least one light source is configured to provide at least one light beam. The depolarization element is disposed on a transmission path of the at least one light beam. The depolarization element includes a first optical element, and the first optical element is provided with a first optical axis. The light homogenization element is configured to allow the at least one light beam to pass to form an illuminating light beam. The incident direction where the at least one light beam is transmitted to the first optical element is not parallel to the first light axis. The depolarization element is located between the at least one light source and the light homogenization element. In addition, projection apparatus is also provided.

Abstract: Apparatus for generating a two-dimensional illumination pattern of light beams, including: controller; a micromirror array; illuminator; collector; and a microlens array; wherein the controller is configured for tilting the micromirrors such that in the Fourier plane of the collector, intensity maxima of light collected by the collector can be generated, wherein the intensity maxima are each allocated to one of the microlenses, wherein from the respectively generated intensity maximum one of the light beams is generated by the respectively allocated microlens.

Abstract: Embodiments of the present disclosure are related to systems and methods for autofocusing an imaging apparatus in real-time during substrate scanning to pattern a substrate that includes a photoresist formed over one or more patterned materials. Displays of varying sizes can be fabricated using digital photolithography systems. The digital photolithography systems discussed herein, which may be referred to as imaging systems, use one or more exposure sources, including solid state emitter devices, for operations including patterning photoresists. Signal classifiers are used to perform shape and pattern recognition to determine whether signals received during substrate scanning are from a top photoresist surface or from sub-surface layers. One or more parameters of the imaging apparatus can be adjusted or maintained based on the signal analysis.

Abstract: A measurement device is equipped with a surface plate, a slider which holds a substrate and which is movable relative to the surface plate, a drive system that moves the slider, a first position measurement system which measures the slider's first position information relative to the surface plate, a measurement unit having a mark detection system that detects a mark on a substrate, a second position measurement system which measures a relative second position information between the mark detection system and substrate, and a controller which obtains the first position information from the first position measurement system and second position information from the second position measurement system while controlling the slider's movement by the drive system, and obtains position information of a plurality of marks based on detection signals of the mark detection system having detected marks on the substrate, the first position information, and the second position information.

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

Abstract: A defect detection system includes a programmable and reconfigurable digital micro-mirror device (DMD) and at least one optical element. The DMD includes a micro-mirror array with a plurality of micro-mirrors adjustable to achieve a first deflection state or a second deflection state. The DMD is configured to receive incoming light and reflect a first portion of the incoming light into a first light channel corresponding to the first deflection state and a second portion of the incoming light into a second light channel corresponding to the second deflection state. The at least one optical element is optically coupled to the first light channel and the second light channel. The at least one optical element is configured to deflect the first portion of the incoming light to a first imaging lens and a second portion of the incoming light to a second imaging lens.

Abstract: A method of calculating electromagnetic scattering properties of a structure represented as a nominal structure and a structural perturbation, has the steps: 1008 numerically solving a volume integral equation comprising a nominal linear system 1004 to determine a nominal vector field being independent with respect to the structural perturbation; 1010 using a perturbed linear system 1006 to determine an approximation of a vector field perturbation arising from the structural perturbation, by solving a volume integral equation or an adjoint linear system. Matrix-vector multiplication of a nominal linear system matrix convolution operator may be restricted to sub-matrices; and 1012 calculating electromagnetic scattering properties of the structure using the determined nominal vector field and the determined approximation of the vector field perturbation.

Abstract: Degradation of the reflectivity of one or more reflective optical elements in a system (SO) for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber (26) containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

Abstract: A projection exposure apparatus for semiconductor lithography having a projection optical unit. The projection optical unit includes a sensor frame, a carrying frame, and a module. The module includes an optical element and actuators for positioning and orienting the optical element. The module is on the carrying frame, and the sensor frame is a reference for the positioning of the optical element. The module includes an infrastructure which includes interfaces for separating a module from the projection optical unit. A method exchanges the module of a projection optical unit of a projection exposure apparatus for semiconductor lithography, wherein the module includes an optical element, while the reference remains in the projection exposure apparatus.

Abstract: An optical assembly and a display apparatus are provided. The optical assembly includes a cover plate, an optical transparent adhesive, a polarizer, a display panel, and an antireflection coating. The antireflection coating is disposed at a location corresponding to a camera, and is configured to reduce the reflectivity of incident light entering the camera. The antireflection coating is disposed at the location corresponding to the camera, so as to reduce the reflectivity of the incident light entering the camera, thereby increasing a mount of admitted light of the camera.

Abstract: A calibration device is provided. The calibration device includes a frame, a first optical sensing device, a second optical sensing device and a third optical sensing device. The frame includes a bottom plate and at least four sidewalls, wherein the sidewalls have a first grating hole, a second grating hole, a third grating hole and a fourth grating hole at a first height. The bottom plate has an image recognition pattern, a first measurement point, a second measurement point and a third measurement point.

Abstract: Three-dimensional objects are formed by photo-curing a liquid polymer by exposure to a radiation in a space between a sheet transparent to the radiation and a supporting plate. On a side of the sheet facing towards the photo-curing liquid polymer, a membrane is arranged. The membrane is transparent to the radiation and covered by a layer of liquid lubricant. The membrane is displaceable with respect to an area in which said liquid polymer is undergoing curing by exposure to the radiation, which radiation (e.g., at 410 nm) may be provided by a collimated light source composed of an array of light emitting diode (LED) sources, an array of baffles, and an array of lenses. The baffles limit beam widths of each individual LED source in the array of LED, and the array of lenses is located one focal length from said array of LED sources.

Abstract: A photolithography method, a method of preparing a flexible substrate and a photoresist drying device are provided. The photolithography method includes: providing a base substrate on which a material layer to be etched is formed, in which the base substrate includes an intermediate region and a peripheral region surrounding the intermediate region; coating a layer of photoresist on the base substrate, in which the photoresist is coated in the intermediate region and the peripheral region, and is formed to cover the material layer to be etched; and drying the photoresist and simultaneously performing a first exposure process on the photoresist coated in the peripheral region.

Abstract: An optical system delivers illuminating radiation and collects radiation after interaction with a target structure on a substrate. A measurement intensity profile is used to calculate a measurement of the property of the structure. The optical system may include a solid immersion lens. In a method, the optical system is controlled to obtain a first intensity profile using a first illumination profile and a second intensity profile using a second illumination profile. The profiles are used to derive a correction for mitigating the effect of, e.g., ghost reflections. Using, e.g., half-moon illumination profiles in different orientations, the method can measure ghost reflections even where a solid immersion lens would cause total internal reflection. The optical system may include a contaminant detection system to control a movement based on received scattered detection radiation. The optical system may include an optical component having a dielectric coating to enhance evanescent wave interaction.

Abstract: A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

Abstract: A method of measuring misregistration in the manufacture of semiconductor devices including providing a multilayered semiconductor device, using a scatterometry metrology tool to perform misregistration measurements at multiple sites on the multilayered semiconductor device, receiving raw misregistration data for each of the misregistration measurements, thereafter providing filtered misregistration data by removing outlying raw misregistration data points from the raw misregistration data for each of the misregistration measurements, using the filtered misregistration data to model misregistration for the multilayered semiconductor device, calculating correctables from the modeled misregistration for the multilayered semiconductor device, providing the correctables to the scatterometry metrology tool, thereafter recalibrating the scatterometry metrology tool based on the correctables and measuring misregistration using the scatterometry metrology tool following the recalibration.

Abstract: A lens system for a camera objective has a plurality of optical lenses that are arranged one after another along an optical axis and are configured for imaging in the visually perceivable spectral range. At least a part of the optical lenses has two types of lens faces that intersect a beam path of the camera objective. At least three of said lens faces are provided with a first anti-reflective coating which has a larger reflectance in at least one partial region of the visible spectral range than a second anti-reflective coating of the remaining lens faces. In addition, a camera objective including the lens system and a method for producing a lens system are provided.

Abstract: The present application discloses an exposure method and an exposure device thereof. The method includes the following steps: confirming a position of a point to be exposed; capturing and confirming that the point to be exposed is successfully captured; adjusting a light source corresponding to the successfully captured point to be exposed to an adaptive position; and completing an exposure operation by an exposure machine.

Abstract: A mirror for a microlithographic projection exposure apparatus, and a method for operating a deformable mirror. In one aspect, a mirror includes an optical effective surface (11), a mirror substrate (12), a reflection layer stack (21) for reflecting electromagnetic radiation incident on the optical effective surface, and at least one piezoelectric layer (16) arranged between the mirror substrate and the reflection layer stack and to which an electric field for producing a locally variable deformation is able to be applied by a first electrode arrangement situated on the side of the piezoelectric layer (16) facing the reflection layer stack, and by a second electrode arrangement situated on the side of the piezoelectric layer facing the mirror substrate. The piezoelectric layer has a plurality of columns spatially separated from one another by column boundaries, wherein a mean column diameter of the columns is in the range of 0.1 ?m to 50 ?m.

Abstract: Disclosed is a metrology sensor apparatus comprising: an illumination system operable to illuminate a metrology mark in on a substrate with illumination radiation; an optical collection system configured to collect scattered radiation, following scattering of the illumination radiation by the metrology mark; and a wavelength dependent spatial filter for spatially filtering the scattered radiation, the wavelength dependent spatial filter having a spatial profile dependent on the wavelength of the scattered radiation. The wavelength dependent spatial filter may comprise a dichroic filter operable to substantially transmit scattered radiation within a first wavelength range and substantially block scattered radiation within a second wavelength range and at least one second filter operable to substantially block scattered radiation at least within the first wavelength range and the second wavelength range.

Abstract: An alignment sensor apparatus includes an illumination system, a first optical system, a second optical system, a detector system, and a processor. The illumination system is configured to transmit an illumination beam along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target on a substrate. The second optical system includes a first polarizing optic configured to separate and transmit an irradiance distribution. The detector system is configured to measure a center of gravity of the diffraction target based on the irradiance distribution outputted from a first polarization branch and a second polarization branch. The processor is configured to measure a shift in the center of gravity of the diffraction target caused by an asymmetry variation in the diffraction target and determine a sensor response function of the alignment sensor apparatus based on the center of gravity shift.

Abstract: An e-beam inspection tool is disclosed, the tool comprising, an electron optics system configured to generate an electron beam, an object table configured to hold a specimen, a positioning device configured to position the object table, the positioning device comprising an actuator, wherein the positioning device further comprises a heating device configured to generate a heat load and a heat load controller to control the generated heat load at least partly based on an actuator heat load generated in the actuator.

Abstract: A sequential lighting device of a lamp for a vehicle, may implement sequential lighting with one light source, reducing the cost and simplifying the structure. Furthermore, the sequential lighting is implemented by the rotation of a light guide, forming a slim lamp form, and the smooth lighting feeling is implemented, improving merchantability.

Abstract: A radiation source comprises: an emitter for emitting a fuel target towards a plasma formation region; a laser system for hitting the target with a laser beam to generating a plasma; a collector for collecting radiation emitted by the plasma; an imaging system configured to capture an image of the target; one or more markers at the collector and within a field of view of the imaging system; and a controller. The controller receives data representative of the image; and controls operation of the radiation source in dependence on the data.

Abstract: An imaging optical unit includes a plurality of mirrors to guide imaging light along an imaging beam path. The plurality of mirrors includes a number of mirrors for grazing incidence (GI mirrors), which deflect a chief ray of a central object field point with an angle of incidence of more than 45°. At least two of the GI mirrors are in the imaging beam path as basic GI mirrors so that the deflection effect thereof adds up for the chief ray. At least one further GI mirror is arranged in the imaging beam path as a counter GI mirror so that the deflection effect thereof acts in subtractive fashion for the chief ray in relation to the deflection effect of the basic GI mirrors. This can yield an imaging optical unit having enhanced flexibility in relation to an installation space used for mirror bodies of the mirrors of the imaging optical unit.

Abstract: In a drive method for a spatial light modulator, out of a first boundary region and a second boundary region arranged adjacently in a Y-direction and extending in an X-direction, mirror elements arranged at a first pitch not resolved by a projection optical system, in the X-direction in the first boundary region are set in the phase 0, and the other mirror elements therein are set in the phase ?; mirror elements arranged at a second pitch not resolved by the projection optical system, in the X-direction in the second boundary region are set in the phase ?, and the other mirror elements therein are set in the phase 0.