Abstract: A sensor apparatus for detecting an overhang on a load of a carrier device, having a sensor arrangement with at least one transmitter and a receiver and also an electronic unit for control purposes. According to the invention, the sensor arrangement senses two regions of the carrier device with a load during a movement of the carrier device such that evaluation of the geometrical position of the regions in relation to one another is made possible, wherein the first region relates to the carrier device and the second region relates to the load. Furthermore, the electronic unit is designed for generating a signal for each region and linking the signals such that it is possible to ascertain an overhang from this.

Abstract: A coating thickness monitor is disclosed that includes at least one radiation source directed at least a portion of the substrate. The coating thickness monitor includes at least one probe for capturing at least a portion of the radiation reflected and refracted by the coating on the substrate. The captured radiation is at least a portion of the radiation directed to the substrate from the radiation source. Further, the coating thickness monitor includes at least one detector in communication with the at least one probe, the at least one detector capable of processing the captured radiation to allow a determination of the thickness.

Abstract: A method and system are presented for use in controlling the processing of a structure. First measured data is provided being indicative of at least one of the following: a thickness (d2) of at least one layer (L2) of the structure W in at least selected sites of the structure prior to the processing of the structure, and a surface profile of the structure prior to said processing. An optical measurement is applied to at least the selected sites of the structure after said processing and second measured data is generated being indicative of at least one of the following: a thickness of the processed structure (d?) and a surface profile of the processed structure, The second measured data is analyzed by interpreting it using the first measured data to thereby determine a thickness (d?1 or d?2) of at least one layer of the processed structure. This determined thickness is thus indicative of the quality of said processing.

Abstract: A method of generating a library of simulated-diffraction signals (simulated signals) of a periodic grating includes obtaining a measured-diffraction signal (measured signal). Hypothetical parameters are associated with a hypothetical profile. The hypothetical parameters are varied within a range to generate a set of hypothetical profiles. The range to vary the hypothetical parameters is adjusted based on the measured signal. A set of simulated signals is generated from the set of hypothetical profiles.

Abstract: Methods for determining parameters of a semiconductor material, in particular non-classical substrates such as silicon-on-insulator (SOI) substrates, strained silicon-on-insulator (sSOI) substrates, silicon-germanium-on-insulator (GOI) substrates, and strained silicon-germanium-on-insulator (sGeOI) substrates. The method provides steps for transforming data corresponding to the semiconductor material from real space to reciprocal space. The critical points are isolated in the reciprocal state and corresponding critical energies of the critical points are determined. The difference between the critical energies may be used to determine a thickness of a layer of the semiconductor material, in particular, a quantum confined layer.

Abstract: An optical system includes both a microspot broadband spectroscopic ellipsometer and a photoacoustic film thickness measurement system that are supplied laser light by the same laser light source. One of the systems makes a measurement, the result of which is used to adjust a parameter of the other system; e.g. the ellipsometer measures thickness and the photoacoustic system uses the thickness result to measure the speed of sound. In one version, the ellipsometer converts the laser beam to a broad-spectrum beam that provides higher intensity.

Abstract: A method of measuring a coating thickness involves projecting a pattern of light on a surface. A first reflection of the pattern of light is received by a first image capturing device. A second reflection of the pattern of light is received by an image capturing device which may be the same or a different image capturing device. The first reflection is compared with the second reflection. A first dated map of the surface is created by comparing the first reflection and the second reflection. A coating is deposited on the surface. A second data map of the surface with the coating is created by comparing reflections. The first data map and the second data map are then compared to determine a thickness of the coating.

Abstract: A method monitors a thickness of a subject film deposited on an underlying structure, the underlying structure contains at least one thin film formed on a substrate. The method includes determining thickness data of the underlying structure and storing the thickness data of the underlying structure in a thickness memory; measuring profile of optical spectrum of the subject film on the underlying structure; reading the thickness data of the underlying structure from the thickness memory; calculating theoretical profiles of the optical spectrum of the subject film based upon corresponding candidate film thicknesses of the subject film and the thickness data of the underlying structure; and searching a theoretical profile of the subject film, which is closest to the measured profile of optical spectrum of the subject film so as to determine a thickness of the subject film.

Abstract: The inventive optical device for measuring the thickness of a medium which is at least partially transparent for an incident beam and covers a second medium comprises a laser for generating the light incident beam in such a way that a beam reflected by the first medium surface and a beam scattered by the second medium surface are formed. The device comprises a photosensitive linear array for detecting the reflected beam and the scattered beam and a processing circuit which is connected to the linear array and enables to measure a space between the reflected beam and the scattered beam and to determine the thickness of the first medium according to the measured space. The processing circuit determines a distance between the linear array and the surface of the second medium from the position of at least one beam and corrects the valve of the thickness of the first medium according to the distance.

Abstract: A measuring device and method are disclosed for parameter distribution measurement over the entire surface of sheet-like objects. The parameters of primary interest are thickness and permeability profiles. The device includes a parameter measuring unit a coordinate measuring unit and a synchronization unit to control operation of the parameter measuring unit and the coordinate measuring unit. The coordinate measuring unit determines the measuring device position on two-dimensional surface using image correlation analysis. The measuring device further comprises a platform for its movement in the plane of the sheet-like object.

Abstract: To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.

Abstract: An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.

Abstract: A reflective film thickness measurement method includes reading an original spectral image of a thin film measured by a broadband light source passing through a measurement system, transforming the original spectral image into a broadband reflectance wavelength function and then into a broadband frequency-domain function, dividing the broadband frequency-domain function by a single-wavelength frequency-domain function to obtain an ideal frequency-domain function, inverse-transforming the ideal frequency-domain function into an ideal reflectance wavelength function, and performing a curve fitting on the ideal reflectance wavelength function and a reflectance wavelength thickness general expression, so as to obtain a thickness of the thin film. A spectral image spatial axis direction processing method is performed to eliminate optical aberration in a deconvolution manner, so as to obtain spectral images of high spatial resolution.

Abstract: A reflective photomask and a method of determining or optimizing thicknesses of layers of the reflective photomask are provided. The reflective photomask may include a substrate, a reflective layer, an absorptive pattern, and a spacer. The substrate may include a reflective region and an absorptive region, the reflective layer may be formed between the reflective and absorptive regions, the absorptive pattern may be formed on the reflective layer corresponding to the reflective region, and the spacer may be formed at an upper portion, lower portion, or inside of the reflective layer so as to correspond to the reflective region.

Abstract: The invention relates to a method of estimating a distance to a surface, whereby an emitter emits light towards a surface, at least some light being reflected by the surface, the surface comprising a detectable feature, the reflected light being received by a first receptor and by a second receptor, the surface being in movement relative to the receptors, the first and the second receptor receiving the light reflected at a first and at a respectively second angle thereby producing a first and a respectively second dataset, each dataset including data representing said feature, the first and the second angle being different, whereby the distance is estimated using the first and the second dataset.

Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters.

Abstract: A resin impregnated amount measuring method and device for accurately and successively measuring an amount of resin impregnated in a fiber in a filament winding molding. An electrostatic capacitance of a fiber impregnated with resin is measured, and an amount of resin impregnated in the fiber is measured based on the measurement result. The fiber impregnated with resin is traveled in a non-contacting manner between two parallel flat plates of an electrostatic capacitance sensor and a change in electrostatic capacitance is measured. The amount of resin impregnated in the fiber may also be measured by irradiating light on the impregnated fiber to determine the image area of, reflectivity of, or distance of the light source from, the fiber.

Abstract: A system of film height measurements and method of measuring film height on a substrate are disclosed. A radiation source illuminates a beam of radiation in the optical range onto a substrate being coated with a layer having a nominal film height is provided. Reflected signals are recorded for two positions and a film height difference of the layer is calculated.

Abstract: A sheet thickness measuring device includes: an illumination unit that outputs a light that is illuminated into a stack of sheets from a first area defined on one of faces including a top face, a bottom face, and side faces of the stack of sheets; a detection unit that detects a light amount distribution of light entered into the stack of sheets and propagated to a second area through the stack of sheets, the second area defined on one of the side faces of the stack of sheets; and a calculation unit that calculates a thickness of a sheet in the stack of sheets based on the light amount distribution detected by the detection unit.

Abstract: A system and method is disclosed for measuring a germanium concentration in a semiconductor wafer for manufacturing control of BiCMOS films. Germanium is deposited over a silicon substrate layer to form a silicon germanium film. Then a rapid thermal oxidation (RTO) procedure is performed to create a layer of thermal oxide over the silicon germanium film. The thickness of the layer of thermal oxide is measured in real time using an interferometer, an ellipsometer, or a spectroscopic ellipsometer. The measured thickness of the layer of thermal oxide is correlated to a germanium concentration of the silicon germanium film using an approximately linear correlation. The correlation enables a value of the germanium concentration in the silicon germanium film to be provided in real time.

Abstract: To improve position reproducibility of support pins 3 and to prevent a displacement of a substrate in a horizontal direction during movement of a position of the substrate between a position on a mounting board 2 and a position on the support pins 3.

Abstract: Disclosed is a method for characterizing a sample having a structure disposed on or within the sample, comprising the steps of applying a first pulse of light to a surface of the sample for creating a propagating strain pulse in the sample, applying a second pulse of light to the surface so that the second pulse of light interacts with the propagating strain pulse in the sample, sensing from a reflection of the second pulse a change in optical response of the sample, and relating a time of occurrence of the change in optical response to at least one dimension of the structure.

Abstract: In a spectroscopic ellipsometer, reflected light reflected on a measurement surface of a substrate is divided into a first polarized light being a linearly polarized component and a second polarized light being a linearly polarized component in a polarization direction perpendicular to the first polarized light, by an analyzer. A polarization state at each wavelength of the reflected light is measured with the first polarized light, and the size and shape of the irradiation region on the measurement surface are detected with the second polarized light. In the spectroscopic ellipsometer, detection of the size and shape of the irradiation region is performed with the second polarized light not used in measurement of the polarization state, out of the reflected light. Therefore, it is possible to detect the size and shape of the irradiation region with high accuracy with highly maintaining the measurement accuracy of the polarization state.

Abstract: The invention relates to a method for determining the absolute spatially resolved double-sided topography and thickness of specimens using two opposite confocally working microscopes. After the unit has been calibrated, the topography of the specimen is measured on both sides of the specimen, is added and the calibration plane is subtracted. The invention also relates to a device for carrying out the method.

Abstract: A sensor is provided that measures web caliper using optical and magnetic measuring devices. The optical measuring devices may employ a confocal chromatic aberration method to accurately determine the distance to the moving web and the magnetic devices may be ferrite core coil and target. Means of stabilizing a moving web are included for improving dynamic measurement accuracy.

Abstract: A measuring device for measuring the height of a workpiece held on a chuck table provided in a processing machine. The measuring device includes a white light source for emitting white light, an acousto-optic deflecting unit for separating the white light emitted from the white light source to produce a flux of diffracted light and for swinging the flux of the diffracted light over a predetermined angular range by applying a voltage, a pinhole mask for passing light having a part of the wavelengths of the diffracted light produced by the acousto-optic deflecting unit, and a chromatic aberration lens for focusing the light passed through the pinhole mask and for applying the focused light to the workpiece held on the chuck table.

Abstract: A jet of water in a cylindrical form is supplied from a jet nozzle onto a measurement surface of a substrate to form a column of the water extending between the nozzle and the measurement surface. Light is emitted from an irradiation fiber and transmitted through the column of water to the measurement surface. The light reflected by the measurement surface is received by a light-receiving fiber through the column of water. A measurement calculation unit measures the thickness of a film formed on the substrate, based on the intensity of the reflected light.

Abstract: A fiber optic sensor includes at least two Fabry-Perot (FP cavities) defined by at least three partially reflecting surfaces which individually and together are capable of generating different interference spectra which are affected by temperature. One of the FP cavities is formed at an end of the sensor and includes a surface which is capable of supporting a thin film, the optical thickness of which is to be measured. The other FP cavity between the lead-in fiber and the first FP cavity thus does not include the film and can thus independently provide highly accurate temperature information for calibrating the optical length of the second FP cavity and compensation for temperature effects on measurement of the thin film supported thereon, preferably by subtraction of a calibrated temperature-dependent change in optical length of the second FP cavity from the measurement made.

Abstract: A high-density channels detecting device for detecting a sample is provided. The high density detecting-device has a light source for emitting a light beam, a collimator, a beam splitter, and a high-density channels imaging device. The collimator arranged on the beam path is used for collimating the emitted light beam. The beam splitter reflects the light beam incident from the collimator to the sample, and the light beam reflected by the sample passes through the beam splitter. The imaging device receives the light beam passing through the beam splitter, and has a light collector and a multi-channel kernel module for receiving the light beam from the light collector. By using the light collector, the light beam incident to the kernel module is parallel to the optical axis of the kernel module.

Abstract: A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

Abstract: In an example embodiment, there is a method (600) for determining an approximately optimal resist thickness comprising providing a first substrate coated with a resist film having a first thickness using a first coat program, (605, 610). The first thickness of resist is measured (615, 620). A second substrate is provided (625) and coated with a resist film using the first coat program. The resist film on the second substrate is exposed to radiation. The reflectance spectrum near the actinic wavelength of the resist film is measured (630). As a function of the periodicity of the reflectance spectrum, an effective refractive index is determined. Based on the effective refractive index, a periodicity of a swing curve of the resist film coated on the second substrate is determined (635). The maxima and minima are determined as a function of the periodicity.

Abstract: A method of determining a thickness of a residue layer on a substrate includes: (1) taking a first set of optical scatterometry measurements on the substrate after an etching procedure; (2) taking a second set of optical scatterometry measurements on the substrate after a post-etch cleaning procedure; (3) calculating a difference measurement between the first set and second set of optical scatterometry measurements; (4) determining an initial thickness measurement of the residue layer based on the difference measurement by applying a first dispersion model; and (5) adjusting the initial thickness measurement by applying a second dispersion model based on a material composition of the residue layer. Numerous other aspects are provided.

Abstract: A confocal optical device and a spherical-aberration correction method reduce the generation of spherical aberration. This confocal optical device includes a drive mechanism which moves a sample board to change the distance between an objective lens and the sample board. A spherical-aberration correction element is disposed between a light source and the objective lens. A reference-position detection section, based on a detection result by a photo-detector, detects the position of the sample board when the focal position of the objective lens coincides with the surface of the sample. A movement-distance derivation section, based on a detection result by the photo-detector, calculates a distance by which the sample board is moved until the focal position of the objective lens coincides with an object to be measured inside of the sample, and derives the depth at which the measured object is located in the sample.

Abstract: A system and a method for thickness measurement that comprises providing a first confocal microscope, emitting a first light beam from the first confocal microscope in a first direction, focusing the first beam at a first focal plane, providing a second confocal microscope, emitting a second light beam from the second confocal microscope in a second direction substantially opposed to the first direction, focusing the second beam at a second focal plane, and adjusting the relative position of the first and second microscopes by overlapping the first and second focal planes.

Abstract: The present invention relates to a method of determining physical properties of an optical layer or layer system by means of spectral transmission and/or reflection measurements, whereby in accordance with the spectrum of the transmission and/or reflection measurement, reference values for the wavelength-dependent refractive indices n0 and/or extinction coefficients k0 are chosen from known values or are determined experimentally and the variation that characterizes the layer is described by wavelength-independent variation constants Kn and Kk for the refractive indices and extinction coefficients.

Abstract: To determine one or more features of an in-die structure on a semiconductor wafer, a correlation is determined between one or more features of a test structure to be formed on a test pad and one or more features of a corresponding in-die structure. A measured diffraction signal measured off the test structure is obtained. One or more features of the test structure are determined using the measured diffraction signal. The one or more features of the in-die structure are determined based on the one or more determined features of the test structure and the determined correlation.

Abstract: Wavelength dispersion of intensity of light reflected from an evaluation object is measured. A complex refractive index of a substance forming the evaluation object and the environment are prepared. Virtual component ratios comprising a mixture ratio of the substances forming the evaluation object and the environment are prepared. Reflectance wavelength dispersions to the virtual component ratios are calculated. Similar reflectance wavelength dispersions having a small difference with the measured wavelength dispersion are extracted from the reflectance wavelength dispersions. Weighted average to the virtual component ratios used for calculating the similar reflectance wavelength dispersions are calculated to obtain a component ratio of the substance forming the evaluation object and the environment so that weighting is larger when the difference is smaller. A structure of the evaluation object is determined from the calculated component ratio.

Abstract: A method of determining surface properties is provided, in which radiation is irradiated onto a first region of a surface to be examined, then at least some of the radiation irradiated onto the first region and returned by the latter is detected, and a measured value characteristic of this returned radiation is output. In a further step, the radiation is irradiated onto a second region of the surface and once again at least some of the radiation irradiated onto the second region and returned by the latter is detected, and a second measured value characteristic of this radiation is output. Finally, a result value is output which is characteristic of a relationship between the first measured value and the second measured value.

Abstract: Various embodiments include a method for providing instructions to a process tool. The method includes emitting an incident light beam at a substrate, receiving a reflected light beam from the substrate and determining a spectrum of the reflected light beam. The method further includes determining a first property of a first layer of the substrate and a second property of a second layer of the substrate, based on the spectrum determination. The method further includes comparing the first property of the first layer to a first reference property and comparing the second property of the second layer to a second reference property. The method further includes determining the instructions based on the first property comparison and the second property comparison; and providing the instructions to the process tool.

Abstract: A method including: providing a low coherence scanning interferometry data for at least one spatial location of a sample having multiple interfaces, wherein the data is collected using a low coherence scanning interferometer having an illumination geometry and an illumination frequency spectrum, and wherein the data comprises a low coherence scanning interferometry signal having multiple regions of fringe contrast corresponding to the multiple interfaces; and determining a distance between at least one pair of interfaces based on a distance between the corresponding regions of fringe contrast and information about the illumination geometry.

Abstract: A method of measuring the thickness of a thin layer formed on a substrate comprises generating a measured signal spectrum by reflecting a light off of the thin layer and analyzing a resulting reflected light. The method further comprises generating a theoretical signal spectrum based on a putative thickness of the thin layer, and computing a skew signal spectrum as a difference between the measured signal spectrum and the theoretical spectrum. The method still comprises computing a reliability index by dividing a reference index by an area of the skew signal spectrum and using the reliability index to update the theoretical signal spectrum in a regression fitting process.

Abstract: An optical sensing probe includes a tube having a tip portion configured for placement in an environment in which conditions are to be sensed and an etalon having a known characteristic disposed proximate the tip portion. The tube also includes a head portion remote from the tip portion containing a light directing element for directing light beams at the etalon and receiving reflected light beams from the etalon wherein the received reflected light beams are used for determining an environmental condition proximate the tip portion. A method for measuring a thickness of the etalon may include directing a light beams at different frequencies at the etalon and receiving the light beams from the etalon. The method may also include identifying conditions of the respective light beams condition received from the etalon and then calculating a first thickness of the etalon responsive to the respective conditions and the known characteristic.

Abstract: A system and method are disclosed for monitoring a dimensional change of a pattern for an object having a transparent layer exposed through the pattern and a non-transparent pattern laminated therewith. According to the method, a first beam is projected to the pattern. A second beam resulted from the first beam passing through the transparent layer exposed by the pattern, or from the first beam reflected from the non-transparent layer of the pattern, is detected. A value of a predetermined property from the second beam detected is obtained. A variation of the value is monitored for identifying the dimensional change of the pattern.

Abstract: A method of examining thin layer structures on a surface for differences in respect of optical thickness, which method comprises the steps of: irradiating the surface with light so that the light is internally or externally reflected at the surface; imaging the reflected light on a first two-dimensional detector; sequentially or continuously scanning the incident angle and/or wavelength of the light over an angular and/or wavelength range; measuring the intensities of light reflected from different parts of the surface and impinging on different parts of the detector, at least a number of incident angles and/or wavelengths, the intensity of light reflected from each part of the surface for each angle and/or wavelength depending on the optical thickness of the thin layer structure thereon; and determining from the detected light intensities at the different light incident angles and/or wavelengths an optical thickness image of the thin layer structures on the surface.

Abstract: The invention concerns a measuring system for optical monitoring of coating processes in a vacuum chamber, in which the light source is arranged inside the vacuum chamber between the substrate carrier and a shutter is arranged beneath the substrate carrier and the light-receiving unit is arranged outside the vacuum chamber in the optical path of the light source. The substrate carrier is designed to accept at least one substrate, and it can move across the coasting source in the vacuum chamber, preferably revolving about an axis, whereby the substrate or substrates cross(es) the optical path between the light source and the light-receiving unit for transmission measurement, and the shutter shades a measurement area across the coating source.

Abstract: The invention relates to a probe for measuring the thickness of frost accretion on a surface. According to the invention, the probe comprises a plurality of measuring stages (E1 to En) which are stacked at least substantially orthogonally to the base (2) of the probe and each measuring stage comprising at least one emitter which can emit a light beam that is at least substantially parallel to said base and at least one receiver which can receive said light beam after reflection on the frost.

Abstract: A measuring device includes several sequentially disposed coating chambers for measuring optical properties of coated substrates. These coating chambers are separated from one another by partitioning walls, whose free ends are located closely above the substrate. The substrate is preferably a continuous film. By measuring the reflection, the transmission, etc. of the substrate between the individual coating chambers, it becomes possible to carry out measurements within only partially completed layer systems. This yields advantages for the technical operation control of the coating process.

Abstract: A method of evaluating a thickness of a film during a polishing process includes the steps of irradiating light onto a surface of the film during the polishing process; obtaining a differential signal of reflection spectra at a polishing time t and a polishing time t??t with a time difference ?t from the polishing time t; and analyzing the differential signal to obtain a thickness d of the film at the polishing time t.

Abstract: A measuring instrument for a wafer for measuring the thickness of a wafer held on a chuck table using a laser beam includes a condenser for condensing and irradiating the laser beam on the wafer held on the chuck table, a light reception unit for receiving reflected light of the laser beam irradiated upon the wafer, a convergence light point changing unit for changing the convergence light point of the laser beam, and a control unit for measuring the thickness of the wafer based on a change signal from the convergence light point changing unit and a light reception signal from the light reception unit. The control unit stores a thickness control map. The control unit controls an angle adjustment actuator, provided for adjusting the installation angle of a pair of mirrors, to change the installation angle and detects two peaks of the light amount based on the reception signal from the light reception unit.

Abstract: A scanning unit for an optical position measuring device, which is suited for optically scanning a scale graduation, to produce positionally dependent scanning signals on the basis of scale graduation. The scanning unit includes a carrier element, at least one optoelectronic component, which is arranged on the carrier element, a radiation-sensitive or a radiation-emitting surface region of the component being oriented to face away from the carrier element. Provision is also made for at least one electrically conductive connector lead between the carrier element and a contacting region of the component. An at least semi-transparent cover element is arranged directly on the radiation-sensitive and/or radiation-emitting surface region of the component.