Abstract: In an apparatus for measuring the dimensions of an object, an opto-electronic sensor system includes an illumination device which sends light towards the object and a receiving device which receives light reflected from the object. In particular, the apparatus includes means for optically splitting the field of view of the opto-electronic sensor system into a plurality of sectors. Each of these sectors covers at least a partial view of the object under inspection from a unique viewing point. The arrangement of the optical splitting means is selected so that based on the respective field of view and the location of the actual or virtual viewing point of each sector the area on the object surface which is visible from at least one of said viewing points is maximized. The apparatus uses only one opto-electronic sensor, but obtains multi-perspective imaging of the object.

Abstract: A system for holding non-contact wafer probes over the surface of a wafer which includes a system for flushing the surface of the probe during grinding.

Abstract: A structural color body is film-like and comprises a front surface layer disposed on a front surface side and a back surface layer disposed on a back surface side, the front surface layer and the back surface layer contain block copolymers and have micro-phase separated structures including lamellar micro domains, each of the micro domains has a wave-like shape having amplitudes in the thickness direction of the structural color body, a maximum value of distances predetermined in the micro domains of the front surface layer is larger than the wavelength in the visible light range, and distances predetermined in the micro domains of the back surface layer are equal to or less than the wavelength in the visible light range.

Abstract: A friction-coefficient estimating device is configured to estimate friction coefficient of the surface of a medium in a form of a sheet by irradiating a light on the surface and by detecting specularly-reflected light component of a reflected light and a diffusely-reflected light intensity.

Abstract: An analytical model simulates the propagation of radiation through a coated continuous web where layer thickness and refractive index, as variables, determine the speed and direction of transmitted radiation. The model predicts characteristics of transmitted radiation based on characteristics of incident radiation and initially assigned values for layer thicknesses. Coating thickness(s) are ascertained in a process whereby incident radiation of known characteristics is directed onto a coated web and thereafter, actual measurements of transmitted radiation are compared to predicted characteristics. Using a fitting algorithm, the assigned thickness(es) of the layer(s) of the model are adjusted and the process repeated until the actual and predicted values are within desired limits at which time, the assigned thickness(es) represent the measured calipers.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.

Abstract: There is provided a device for monitoring a thickness reduction of an inner surface in a heat transfer tube or an inner surface in an evaporation tube, the device including: a movement unit which moves along a fin tube; a laser measurement unit which is provided in the movement unit and measures the thickness reduction of the inner surface by a laser; a cable which includes a light guiding path for introducing a laser into the laser measurement unit and a light deriving path for transmitting reflected light; and a thickness reduction determining unit which compares the laser measurement data with past data or standard data and determines the current thickness reduction.

Abstract: A thin-film inspection apparatus calculates a film thickness of a first transparent thin film and a second transparent thin film of an inspection-target substrate including the first and second transparent thin films and a transparent conductive film on a transparent glass substrate.

Abstract: The present invention provides a method of authenticating the provenance of an article marked with a transparent polymer film comprising measuring the thickness of the film or of a layer within in the film by white light interferometry and/or by birefringence.

Abstract: A measurement unit comprising a light source and a photodetector may be formed in a cavity in a substrate. The light source produces light that impinges a material layer and is reflected back to the photodetector. Through methods such as interferometry and ellipsometry, the thickness of the material layer may be calculated from the light intensity data measured by the photodetector. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A height-measuring device (100) in which the focal position of an image-forming optical system (20) is moved in relative fashion in the direction of an optical axis with respect to an object (10) to be measured; scanning is performed; images of the object (10) to be measured, which are formed by the image-forming optical system (20), are obtained in order; and the focal position for individual pixels of the images is found, thereby yielding a relative height value of the object to be measured (10) at positions corresponding to the pixels; wherein a second function (g) is defined on the basis of a first function (f) fitted to a numerical value sequence comprising a coordinate value on the optical axis and a light intensity value for the pixels of a plurality of the images obtained by the scanning, or the coordinate value and a numerical value obtained by processing the light intensity value; and positions on the optical axis at which a correlation value between the numerical value sequence and the second funct

Abstract: A thickness measuring system for measuring a thickness of a planar plate-shaped member on a conveyer belt includes a processor, a first distance measurer and a second distance measurer. The first distance measurer on one side of the conveyor belt can emit and receive a first light beam parallel to the conveyer belt for reflection off the planar plate-shaped member, and calculate a first distance between the first distance measurer and the plate-shaped member. The second distance measurer on the other side of the conveyor belt can emit and receive a second light beam and a third light beam for reflection off the planar plate-shaped member, and calculate a second distance between the first distance measurer and the plate-shaped member and a third distance between the second distance measurer and the plate-shaped member.

Abstract: A safety system for detecting the presence of an undesired object in a safety area may include a first pair of distance measuring sensors disposed on opposed sides of the conveying path, the pair of distance measuring sensors defining a sensor field between said pair of distance measuring sensors, and an electronic control device operatively coupled to the sensors. The electronic control device may be configured to initiate a machine-stopping sequence based at least in part on signals received from the distance measuring sensors.

Abstract: Various metrology systems and methods are provided.

Abstract: A structural color body is film-like and formed of a resin layer containing a block copolymer, the resin layer has a micro-phase separated structure including lamellar micro domains, each of the micro domains has a wave-like shape having amplitudes in the thickness direction of the structural color body, and in each of the micro domains, a maximum value of distances in the direction between the tops of convexities and the bottoms of concavities is larger than the wavelength in the visible light range.

Abstract: A system for holding non-contact wafer probes over the surface of a wafer which includes a system for flushing the surface of the probe during grinding.

Abstract: A method of determining an amount of media in a stack of media that is disposed within a media holding receptacle of an imaging system, the method includes providing a stack-compressing element configured to contact a first piece of media in the stack of media; providing a sensor to detect a position of the first piece of media; applying a first compressive force to the stack of media via the stack-compressing element in contact with the first piece of media; applying a second compressive force to the stack of media via the stack-compressing element in contact with the first piece of media, the second compressive force being greater than the first compressive force; and using the sensor to detect the position of the first piece of media after the second compressive force is applied to the stack of media.

Abstract: Described herein is a method and apparatus for measuring the thickness of a deposited semiconductor material. A colorimeter has an optical source that illuminates a portion of a deposited semiconductor material with optical radiation, a sensor that collects and measures color information related to reflected radiation from the deposited semiconductor material, and a processor that receives the color information related to the reflected radiation from the sensor and calculates a thickness of the semiconductor material. The processor may control a semiconductor material deposition apparatus.

Abstract: A method for determining the surface topography of a coated object and for the simultaneous spatially resolved determination of the thickness of the layer on the coated object. It is provided that the surface topography is measured with the aid of white-light interferometry, the thickness of the layer is measured by the principle of reflectometry, and by using, for both measurements, a shared radiation source having an electromagnetic radiation spectrum, which is reflected from the layer surface in a first wavelength range contained in the radiation spectrum and which penetrates into the layer in a second wavelength range contained in the radiation spectrum. Also described is a corresponding optical measuring instrument. The method and the optical measuring instrument make simultaneous highly accurate surface measurement of the surface topography and of the layer thickness of coated objects possible.

Abstract: Dual mounting head scanner system measures the thickness of a flexible continuous moving web such as paper by employing an optical senor positioned in the upper head to determine the distance between the optical sensor and the upper surface of the paper while a displacement sensor positioned in the lower head determines the distance between the displacement sensor, which includes an RF coil, and a reference surface on the upper head. An air clamp and vacuum source assembly on the operative surface of the lower head maintains the moving web in physical contact with a measurement surface that is incorporated in the operative surface. The optical sensor directs incident radiation onto the web at the measurement surface. Thermal isolation of the two sensors eliminates thermal interactions.

Abstract: The present invention provides a laminated structure for measuring reflected light intensity able to measure the thickness of a surface adsorbed film with high sensitivity by a simple optical technique. Provided are a laminated structure for measuring reflected light intensity at at least one wavelength that comprises a valve metal optical interference layer, and a method for measuring film thickness and/or mass and/or viscosity of a thin film targeted for measurement by radiating light onto the thin film targeted for measurement and measuring a change in reflected light intensity at at least one wavelength in a measurement medium in this laminated structure for measuring reflected light intensity.

Abstract: A method for evaluating a thin-film-formed wafer, being configured to calculate a film thickness distribution of a thin film of the thin-film-formed wafer having the thin film on a surface of a substrate, wherein light having a single wavelength ? is applied to a partial region of a surface of the thin-film-formed wafer, reflected light from the region is detected, reflected light intensity for each pixel obtained by dividing the region into many pieces is measured, a reflected light intensity distribution in the region is obtained, and the film thickness distribution of the thin film in the region is calculated from the reflected light intensity distribution. The method enables a film thickness distribution of the micro thin film (an SOI layer) that affects a device to be measured on the entire wafer surface at a low cost with a sufficient spatial resolution in a simplified manner.

Abstract: A film-like structural color body comprises a front surface layer disposed on a front surface side, a back surface layer disposed on a back surface side, and an intermediate layer disposed between the front surface layer and the back surface layer, the front surface layer, the back surface layer and the intermediate layer contain block copolymers and have micro-phase separated structures including lamellar micro domains, each of the micro domains has a wave-like shape having amplitudes in the thickness direction of the structural color body, a maximum value of predetermined distances in the micro domains of the front surface layer and a maximum value of predetermined distances in the micro domains of the back surface layer are larger than the wavelength in the visible light range, and predetermined distances in the micro domains of the intermediate layer are equal to or less than the wavelength in the visible light range.

Abstract: A device is provided that can be inserted into a spectrophotometer, in order to measure the thickness and refractive index of a thin film that is on a sample plate. A pair of identical parallelogram prisms diverts the spectrophotometer beam to measure the attenuated total reflection, and returns an output beam that is in the original beam path, independent of wavelength and rotation angle. The attenuated total reflection of the thin film sample plate is measured in a prism coupling geometry, as a function of wavelength and angle. From this data, combined with normal incidence transmission data, the thickness and refractive index can be extracted.

Abstract: One or more parameters of a sample that includes a textured substrate and one or more overlying films is determined using, e.g., an optical metrology device to direct light to be incident on the sample and detecting light after the incident light interacts with the sample. The acquired data is normalized using reference data that is produced using a textured reference sample. The normalized data is then fit to simulated data that is associated with a model having an untextured substrate and one or more variable parameters. The value(s) of the one or more variable parameters from the model associated with the simulated data having the best fit is reported as measurement result.

Abstract: An optical characteristic measuring apparatus includes a light source, a detector and a data processing unit. Data processing unit includes a modeling unit, an analyzing unit and a fitting unit. The plurality of film model equations are solved, and prescribed calculation is performed on the assumption that the optical constants included in the plurality of film model equations is identical. Fitting is performed between a waveform obtained by substituting the obtained film thickness and the obtained optical constants of the film into the film model equations and a waveform of the wavelength distribution characteristic obtained by detector, thereby determining that the optical constants included in the plurality of film model equations is identical and that the film thickness and the optical constants obtained by the analyzing unit are correct values.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.

Abstract: The present invention is a film thickness measurement apparatus including a light source, a first optical path, a first condenser lens, a spectrometry unit, a second optical path, a second condenser lens, and a data processing unit. The light source emits measurement light having a predetermined wavelength range. The first optical path guides to an object to be measured the measurement light. The first condenser lens condenses the measurement light. The spectrometry unit obtains a wavelength distribution characteristic of reflectance or transmittance. The second optical path guides to the spectrometry unit the light reflected by or transmitted through the object. The second condenser lens condenses light at an end of the second optical path. The data processing unit analyzes the wavelength distribution characteristic obtained in the spectrometry unit to obtain a film thickness of the object.

Abstract: A computer-implemented method includes receiving a sequence of current spectra of reflected light from a substrate; comparing each current spectrum from the sequence of current spectra to a plurality of reference spectra from a reference spectra library to generate a sequence of best-match reference spectra; determining a goodness of fit for the sequence of best-match reference spectra; and determining at least one of whether to adjust a polishing rate or an adjustment for the polishing rate, based on the goodness of fit.

Abstract: A local purging tool for purging a portion of a surface of a wafer with purging gas is disclosed. The purging tool includes a purging chamber configured to contain purging gas within a cavity of the purging chamber, a permeable portion of a surface of the purging chamber configured to diffuse purging gas from the cavity of the chamber to a portion of a surface of a wafer, and an aperture configured to transmit illumination received from an illumination source to a measurement location of the portion of the surface of the wafer and further configured to transmit illumination reflected from the measurement location to a detector.

Abstract: A conveying apparatus for conveying an object, the object having at least a non-opaque portion, including a light source, an optical detector and a backing measurement apparatus, the light source for illuminating the object, the optical detector for acquiring information at least relating to at least one chromatic characteristic of the non-opaque portion, the backing measurement apparatus including a backing material, a backing support and a plurality of rollers, the backing material exhibiting at least one of determined chromatic characteristics and determined optical characteristics, the backing support for supporting the backing material, the plurality of rollers for rolling the backing material over the backing support, wherein light emitted by the light source optically interacts with the backing material consistently through the non-opaque portion.

Abstract: A film thickness measuring device is provided with a light source, a spectroscopic sensor, a processor, and a storage unit, and configured in such a manner that light from the light source vertically enters a plane to be measured provided with a film and the light reflected by the plane to be measured enters the spectroscopic sensor. The storage unit stores theoretical values of reflectivity distributions of respective film thicknesses and theoretical values of color characteristic variables of the respective film thicknesses. The processor finds the thickness of the film of the plane to be measured from the reflectivity distribution measured by the spectroscopic sensor by using the theoretical values of the reflectivity distributions of the respective film thicknesses or the theoretical values of the color characteristic variables of the respective film thicknesses stored in the storage unit.

Abstract: Methods and apparatus for measuring thickness of a thin film include: obtaining a high-speed thickness measurement of a thin film using a laser projection system and detector array, obtaining thickness measurements of the thin film at one or more locations using a single-point measurement apparatus and determining the accuracy of the high-speed measurement values by comparing them to one or more of the absolute thickness values of the film as measured by the single-point measurement apparatus.

Abstract: Authentication apparatus (1, 100) and methods which authenticate an item (4, 110) responsive to the detection that a portion of the item has one or more predetermined characteristics, the said predetermined characteristics comprising either or both the thickness of the said portion of the item, and the thickness of one or more layers within the said portion of the item, determined by optically-based thickness measuring apparatus (6, 102-108). The item may be a product and the portion of the item may be a sheet of packaging material. The item may be a security document and the portion of the item may be a sheet of security document substrate.

Abstract: The present invention discloses a detection and analysis apparatus, comprising a photo sensing device, comprising a plurality of sensing elements linearly arranged to form a first array, for detecting a signal of the thickness change of the cake at a linear position of the filter medium; a driving device, for driving the photo sensing device to move relatively parallel to the filter medium on the top of the cake so that the photo sensing device detects the thickness change of the cake on at least one local plane of the filter medium; and a data processing device, coupling to the photo sensing device, for continuously processing and analyzing the signal detected by the photo sensing device to thereby in-situ estimate the thickness change of the cake on the at least one local plane of the filter medium during the filtration process.

Abstract: Deposition of a thin film is monitored by illuminating the thin film with an incident beam during deposition of the thin film, wherein at least a portion of the incident beam reflects off the thin film to yield a reflected beam; measuring intensity of the reflected beam from the thin film during growth of the thin film to obtain reflectance; and curve-fitting at least part of an oscillation represented by the reflectance data to obtain information about at least one of thickness, growth rate, composition, and doping of the thin film.

Abstract: An inspecting method and apparatus for inspecting a substrate surface includes application of a light to the substrate surface, detection of scattered light or reflected light from the substrate surface due to the applied light at a plurality of positions to obtain a plurality of electrical signals, extraction of a signal in a mutually different frequency band from each of the plurality of electrical signals, and calculation of a value regarding a state of film of the substrate through an arithmetical operation process of a plurality of extracted signals in the frequency bands.

Abstract: The method includes first and second steps of placing an object in first and second media whose refractive indices are lower than that of the object, and of causing the reference light to enter the object to measure first and second transmitted wavefronts. When light rays entering a peripheral portion of the object and passing through a same point of the object are defined as first and second light rays, the method causes these light rays to proceed in directions mutually different to change an NA of the reference light such that the reference light after being transmitted through the object is brought closer to collimated light than that before entering the object. The method calculates an effective thickness of the object using geometric thicknesses thereof and calculates a refractive index distribution thereof using the first and second transmitted wavefronts and the effective thickness.

Abstract: An inspection method of an SOI wafer in which profiles P1 and P2 are calculated in the SOI wafer to be inspected and in an SOI wafer having a film thickness of the SOI layer thicker or thinner than that of the SOI wafer to be inspected, respectively; a profile P3 of a difference between P1 and P2, or a profile P4 of a change ratio of P1 and P2 is calculated; light having the wavelength band selected on the basis of a maximum peak wavelength within the calculated profiles P3 or P4 is irradiated to the surface of the SOI wafer to be inspected, to detect the reflected-light from the SOI wafer; and a place of a peak generated by an increase in reflection intensity of the detected reflected-light is found, as the defect caused by the change in the film thickness of the SOI layer.

Abstract: A method and means for determining the thickness, or curvature, of a thin film or stack of thin films disposed on the surface of a substrate having a curvature comprising generating a beam of radiation, focusing the beam through the one or more films onto a surface of the substrate, measuring the intensity across the reflected beam as a function of the angle of incidence of a plurality of rays derived from the focussed beam, determining the path of each of the plurality of rays and determining the thickness, or curvature of the film, or films, from the angular dependent intensity measurement.

Abstract: A method of measuring a thickness of a coating on a substrate material. A first pulse of monochromatic light having a predetermined first wavelength is emitted toward the coating and substrate material. A second pulse of monochromatic light having a predetermined second wavelength is emitted toward the coating and substrate material, the second wavelength being different than the first wavelength. A first elapsed time is measured from emission of the first pulse of light to reception of a reflection of the first pulse of light from a surface of the substrate material at an interface with the coating. A second elapsed time is measured from emission of the second pulse of light to reception of a reflection of the second pulse of light from an outer surface of the coating. A thickness of the coating is determined as a function of a difference between the first and second elapsed times.

Abstract: Described is an optical information medium measurement method of measuring a degree of modulation in an optical information medium of a multilayered structure having a plurality of information layers. The method includes measuring the modulation degree of each layer of the optical information medium, by use of a measurement optical system, obtaining a thickness between layers of the optical information medium, obtaining a reflectance of each layer of the optical information medium, and converting the measured modulation degree of each layer into a modulation degree at a reference optical system differing from the measurement optical system, based on a value indicative of the obtained thickness between layers and a value indicative of the obtained reflectance of each layer.

Abstract: A method and system are presented for use in characterizing properties of an article having a structure comprising a multiplicity of sites comprising different periodic patterns. The method comprises: providing a theoretical model of prediction indicative of optical properties of different stacks defined by geometrical and material parameters of corresponding sites, said sites being common in at least one of geometrical parameter and material parameter; performing optical measurements on at least two different stacks of the article and generating optical measured data indicative of the geometrical parameters and material composition parameters for each of the measured stacks; processing the optical measured data, said processing comprising simultaneously fitting said optical measured data for the multiple measured stacks with said theoretical model and extracting said at least one common parameter, thereby enabling to characterize the properties of the multi-layer structure within the single article.

Abstract: An automatic document feeder includes a transfer channel, a pick-up module and a thickness detecting module. The thickness detecting module includes a detecting member, a transmission member and an optical displacement sensing member. By the pick-up module, a sheet article is fed into the transfer channel. When the sheet article is transported across the detecting member, the sheet article is sustained against the detecting member, so that the detecting member is moved. The transmission member is connected to the detecting member. As the detecting member is moved, the transmission member generates a displacement amount. The optical displacement sensing member is used for detecting a displacement amount of the transmission member, thereby acquiring the thickness of the sheet article.

Abstract: There is provided a method of measuring a physical thickness of each of layers of a multilayer film, based on an optical thickness thereof. The method includes: (a) setting refractive indexes of the layers; (b) calculating a coefficient matrix using the refractive indexes; (c) providing light to the multilayer film so as to measure the optical thickness based on the light reflected by the multilayer film; and (d) calculating the physical thickness, based on the optical thickness and the coefficient matrix.

Abstract: A thickness detecting mechanism is provided for detecting a thickness of a to-be-measured article. The thickness detecting mechanism includes a detecting arm and an optical displacement sensing module. The detecting arm is moved as the to-be-measured article is sustained against the detecting arm. The detecting arm includes a surface. The optical displacement sensing module detects the surface of the detecting arm when the detecting arm is respectively located in a first position and a second position. According to the displacement amount of the detecting arm from the first position to the second position, the thickness of the to-be-measured article is acquired.

Abstract: Methods, systems, and apparatus for spectrographic monitoring of a substrate during chemical mechanical polishing are described. In one aspect, a computer-implemented method includes storing a library having a plurality of reference spectra, each reference spectrum of the plurality of reference spectra having a stored associated index value, measuring a sequence of spectra in-situ during polishing to obtain measured spectra, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, determining the associated index value for each best matching spectrum from the sequence of best matching reference spectra to generate a sequence of index values, fitting a linear function to the sequence of index values, and halting the polishing either when the linear function matches or exceeds a target index or when the associated index value from the determining step matches or exceeds the target index.

Abstract: A radiation inspection apparatus may include a radiation source that irradiates linear radiation, which is parallel to an inspection direction set on an inspection target, to the inspection target, a line type detector that detects the radiation transmitted through the inspection target, a correction detector that is disposed in at least one of a position between the radiation source and the inspection target and a position between the inspection target and the line type detector, the correction detector moving along the inspection direction to detect the radiation, which has been irradiated from the radiation source, at each of a plurality of inspection positions along the inspection direction, and a correction device that corrects the detection result of the line type detector by using the detection result of the correction detector.

Abstract: A measurement device for the determination of the characteristics of the object's surface by means of the optical radiation, wherein a measurement device comprises an optical radiation source and a detector to receive the radiation reflected from the surface being measured. In addition, a measurement device comprises an emitted optical radiation processing unit, which is adjusted to split optical radiation emitted by an optical source into separate wavelengths and to direct said separate wavelengths to the object being measured in a direction, that differs from the normal of the surface being measured so, that at least the shortest and the longest wavelengths of said wavelengths are focused on different halves and different heights of the measured object's surface, in the direction of the normal of the surface being measured.

Abstract: The present invention relates to a method and an apparatus for determining the layer thickness and the refractive index of a sample. It is an object of the present invention to provide a method for determining the layer thickness of a sample (layer) having high light scattering characteristics that allows a fast (real-time process) and cost-effective measurement having a high accuracy.