Abstract: An Interferometric Modulator (IMod) is a microelectromechanical device for modulating light using interference. The colors of these devices may be determined in a spatial fashion, and their inherent color shift may be compensated for using several optical compensation mechanisms. Brightness, addressing, and driving of IMods may be accomplished in a variety of ways with appropriate packaging, and peripheral electronics which can be attached and/or fabricated using one of many techniques. The devices may be used in both embedded and directly perceived applications, the latter providing multiple viewing modes as well as a multitude of product concepts ranging in size from microscopic to architectural in scope.

Abstract: The device comprises at least a measuring head (7) with a transmitter (7A) and a receiver (7B). The head comprises means to measure the thickness through surface resistivity and optical means to measure said thickness by measuring the transparency of the substrate and of the relative layer applied to it.

Abstract: A method for measuring the wall thickness of plastic containers during a container manufacturing process includes providing a plastic container, the plastic container having a longitudinal axis and at least two side walls spaced radially from the longitudinal axis. The side walls are formed of a material that absorbs light energy in a predetermined molecular absorption band. Light energy is then directed from a source through the at least two side walls of the plastic container in a plane transverse to the longitudinal axis of the plastic container. A portion of the light energy that passes through the sidewalls of the plastic container is sensed, and a signal representing a thickness of the sidewalls of the plastic container is generated from the sensed portion of the light energy.

Abstract: An optical system is presented for use in a measurement system (100) for use in measurements of thin films of a workpiece (W), the system comprising an optical assembly (14), comprising illuminator assembly, a detector assembly, and a light directing assembly (FA-OF) for directing illuminating light to a plurality of measurement sites in the workpiece (W) arranged in an array of substantially concentric ring-like regions, such that an area defined by the measurement sites within one of the substantially concentric ring-like regions is substantially equal to that of the other substantially concentric ring-like region.

Abstract: A method and apparatus for measuring wafers, thin films, or other planar layers are disclosed. This invention utilizes a tunable, monochromatic light source reflected from or transmitted through the layer to be measured. The wavelengths of light are selected such that the light is partially transmitted through the material to be measured so as optical interference is seen among the interfaces of the layer(s). The wavelengths are also controlled to sufficiently small increments to resolve these interference features. This apparatus relates to the need to monitor wafer thinning, film deposition, and other semiconductor device related processes.

Abstract: The polarization angle ?1 of a polarizer (14) is set, and the reflection intensity S1 in a cross Nicol state and the reference reflection intensity Ref1 of a liquid crystal cell (15) are measured. A different polarization angle ?2 is then set, and the reflection intensity S2 in a cross Nicol state and the reference reflection intensity Ref2 of the liquid crystal cell are measured. The rations S1/Ref1, S2/Ref2 of measured intensities and the ratio S1·Ref2/S2·Ref1 is determined in order to cancel the background components of the reference reflection intensities Ref1, Ref2 thus determining the value of cell gap accurately.

Abstract: An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. In one preferred embodiment, the detector includes eight radially arranged segments, each segment generating an output which represents an integration of multiple angle of incidence. A processor manipulates the output from the various segments to derive ellipsometric information.

Abstract: A film thickness measurement apparatus has an image pickup part (32) for acquiring a plurality of single-band images corresponding to a plurality of wavelengths, and the image pickup part (32) acquires a plurality of reference single-band images representing a pattern on a reference substrate. A correction factor setting part (51) performs setting of a plurality of correction factors in accordance with distances from a specified pixel by using a plurality of reference single-band images. Subsequently, the image pickup part (32) acquires a plurality of measurement single-band images representing a pattern on an objective substrate and corrects a value of the specified pixel for each of a plurality of measurement single-band images by using the value of the specified pixel and values of pixels surrounding the specified pixel and the correction factors.

Abstract: A target detection apparatus is provided which can detect and quantitatively measure various detection targets such as pathogens. For this purpose, the apparatus comprises an optical irradiation unit which irradiates light; an optical interference unit which can interact with the detection target, interferes with the light irradiated from the optical irradiation unit and radiates it as interference light and change the wavelength of the interference light after interaction with the detection target; and an wavelength change detecting unit which detects the wavelength change of the interference light radiated by the optical interference unit. The wavelength change detecting unit preferably measures spectrums before and after wavelength change of the interference light, and their differential spectrum. Also provided is a target detection substrate comprising a film-like material on a substrate which, when interacting with a detection target, changes the wavelength of the interference light.

Abstract: Techniques for non-contacting thickness or caliper measurements of moving webs or sheets employ a sensor device that includes a first sensor head and a second sensor head that are spaced apart to define a path through which the moving web travels. The sensor device projects a laser generated, multiple points pattern onto the upper surface of the moving web. Pattern recognition algorithm analysis of the pattern identifies the orientation, e.g., tilt, of the moving web. The device further measures the film tilt, the distance between the first sensor head and the first web surface, the distance between the second sensor head and the second web surface, and the distance between the two sensor heads to provide a highly accurate on-line thickness measurement of the moving web.

Abstract: A method for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing. The structure represents a grid having at least one cycle formed of at least two metal-containing regions spaced by substantially transparent regions with respect to incident light defining a waveguide. An optical model is provided, which is based on at least some of the features of the structure defined by a certain process of its manufacturing, and on the relation between a range of the wavelengths of incident radiation to be used for measurements and a space size between the two metal-containing regions in the grid cycle, and a skin depth of said metal. The model is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure.

Abstract: A coefficient of linear expansion measuring apparatus includes: two reflection plates between which a sample is put, a container to house them, which is filled with a gas having known rate of a refractive index variation, a temperature regulating member to set a temperature in the container variably, a light source to irradiate an irradiating light to reflecting surfaces of the reflection plates, a light receiving element to receive reflected lights in which the lights interferes each other and detecting a light intensity thereof, and a calculating member to calculate a coefficient of linear expansion of the sample, wherein: the calculating member calculates an optical path length variation between the reflecting surfaces from an output variation of the light receiving element, and calculates a length variation of the sample by correcting a part of the optical path length variation derived from the refractive index variation of the gas caused by the temperature variation.

Abstract: A technique for focusing and maintaining the focus of an inspection or review system upon a specific layer of a multi-layered specimen is described. In one embodiment, a confocal autofocus system can be used to focus an optical inspection or review system upon the top layer of a semiconductor wafer thin-film stack. The confocal autofocus system utilizes a tilted mask having a linear array of apertures or a continuous slit that is aligned so that a respective linear array of focal points or a focal slit is parallel with a scanning axis of the inspection system. Appropriate processing of the profile depth information yields knowledge of the depth of various layers in the specimen and allows for selection of the layer or location of interest upon which to focus the inspection or review system.

Abstract: An electron-beam deposition system includes an evaporation source having a source target with a target location at which a deposition material may be positioned, and a controllable electron-beam source disposed to direct an electron beam at the target location. A trailing-indicator monitor measures a past evaporation performance of the evaporation source and has a trailing-indicator output, and a leading-indicator monitor measures a future evaporation performance of the evaporation source and has a leading-indicator output. A controller receives the trailing-indicator output and the leading-indicator output, and controls the electron-beam source responsive to the trailing-indicator output and to the leading-indicator output. Preferably, the trailing-indicator monitor measures a deposition of the deposition material on a monitored substrate, and the leading-indicator monitor measures a brightness of the deposition material in the evaporation source.

Abstract: A bearing with an oil film thickness measuring device in which sensor portions at distal ends of four common optical fibers are connected to sensor mounting portions formed at four positions in an axial direction of a bearing body. A lubricating oil containing a fluorescent agent is supplied to a sliding surface of the bearing body. A laser beam generated from a laser beam generator is branched into four beams, which are applied to an oil film on a sliding surface through each of sensor portions. Fluorescence generated by the fluorescent agent in the oil film, passing through a return-route optical fiber, is introduced into a photomultiplier tube, and is detected. Since the fluorescence intensity detected by the photomultiplier tube is proportional to the thickness of oil film, the absolute value of oil film thickness can be measured. In this case, the oil film thickness can be measured at four positions.

Abstract: An apparatus and a method are disclosed for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing, wherein the structure represents a grid having at least one cycle formed of at least two metal-containing regions spaced by substantially transparent regions with respect to incident light defining a waveguide. The method utilizes an optical model based on at least some of the features of the structure defined by a certain process of its manufacturing, and is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure.

Abstract: A material web attribute detection system with the material web having a first side and a second side. The system includes a radiation source located proximate to the first side of the material web and emitting radiation toward the material web, and a radiation detection array located proximate to the second side of the material web and producing a plurality of signals based on the radiation detected from the radiation source. A processor is included which utilizes the plurality of signals to determine a lateral offset and a gap size of the radiation detection array relative to the radiation source. The processor can then compensate for the radiation detection array and radiation source relative misalignment using the plurality of signals, the lateral offset and the gap size.

Abstract: A method for high-precision measurement of film thickness and the distribution of film thickness of a transparent film is disclosed. The method is performed during a CMP process, without being affected by the film thickness distribution among the LSI regions or on the semiconductor wafer surface. The film thickness is measured by specifying relatively level measurement regions, according to a characteristic quantity of the spectral waveform of the reflected light from the transparent film, such as the reflection intensity, frequency spectrum intensity. This permits highly accurate control of film thickness. The leveling process in CMP processing can be optimized on the basis of the film thickness distribution.

Abstract: A method for characterizing or controlling the production of a thin-layered component using optical methods. Acquired signals S1 and S2 are processed in order to obtain parameters x, ? of the deposited layers. The stacking is represented by the product of two Abeles matrices for each direction of polarization s (perpendicular to the incidence plane) and p (parallel to the incidence plane): a known matrix Mos,p representing the support and matrix dMs,p representing a thin transparent layer being deposited.

Abstract: The present invention provides a method of measuring the thickness of a thin film or thin layer by a spectroscopic measurement, which is applicable to the measurement of a multiple layered film whose layers have different refractive indices. According to the method, an interference light from the film is measured to create a measured spectrum. The waveform of the measured spectrum can be approximately represented by a linear sum of base spectrums. Accordingly, various constructed spectrums are created using base spectrums each having a cycle interval as a parameter. Then, the constructed spectrum that minimizes the square error against the measured spectrum is identified. The least square error is calculated for each of predetermined cycle intervals. A graph is drawn to represent the relation between the least square error and the cycle interval. The correspondence between the layers and the plural minimum points of the least square error appearing on the graph is determined.

Abstract: An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. In one preferred embodiment, the detector includes eight radially arranged segments, each segment generating an output which represents an integration of multiple angle of incidence. A processor manipulates the output from the various segments to derive ellipsometric information.

Abstract: A method for measuring the wall thickness of plastic containers (16) during a container manufacturing process includes providing a plastic container (16), the plastic container (16) having a longitudinal axis and at least two side walls spaced radially from the longitudinal axis. The side walls are formed of a material that absorbs light energy in a predetermined molecular absorption band. Light energy is then directed from a source unit (32) through the at least two side walls of the plastic container (16) in a plane transverse to the longitudinal axis of the plastic container (16). A portion of the light energy that passes through the sidewalls of the container (16) is sensed by a sensor (34), and a signal representing a thickness of the sidewalls of the plastic container is generated from the sensed portion of the energy by a computer (56).

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a characteristic of a layer formed on a specimen by a deposition process. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Abstract: Disclosed is a method for quality control of a material layer, which involves providing the material of the layer with an agent for absorbing an electromagnetic radiation, irradiating the surface of the layer with an electromagnetic radiation, and measuring the amount of light emitted by the material layer, for example, reflected radiation or fluorescence radiation.

Abstract: A displacement sensor includes a light emitter for emitting light towards a target object, a detector for receiving reflected light from the target object and generating a detection signal which depends on the distance to the target object, a signal processor for calculating the distance to the target object from the detection signal. The signal processor receives from another sensor a data item representing a distance value calculated by the latter and carries out a specified calculation using also the result of calculation with the calculated distance obtained by itself and said calculated distance data item and to output the result of said calculation.

Abstract: A method of inspecting wall thickness of blow-molded plastic containers includes providing a blow-molder having a plurality of molds and a plurality of associated spindles. The containers are inspected by impinging infrared light thereon and detecting the portion of the infrared light that passes through the container and converting the same into corresponding electrical signals which are delivered to a microprocessor. The microprocessor compares the electrical signals with stored information regarding desired wall thickness of the container and emits output thickness information. The microprocessor receives signals from sensors associated with the blow-molder relating to the position of the molds, the identity of the molds and the identity of the spindles in order that the wall thickness information that is determined by inspection can be associated with specific molds and spindles. The wall thickness information may be averaged over a period of time or a number of containers.

Abstract: An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. In one preferred embodiment, the detector includes eight radially arranged segments, each segment generating an output which represents an integration of multiple angle of incidence. A processor manipulates the output from the various segments to derive ellipsometric information.

Abstract: An apparatus and a method are disclosed for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing, wherein the structure represents a grid having at least one cycle formed of at least two metal-containing regions spaced by substantially transparent regions with respect to incident light defining a waveguide. The method utilizes an optical model on at least some of the features of the structure defined by a certain process of its manufacturing, and is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure.

Abstract: To determine the uniformity of an optical component, a light beam is directed to impinge on a surface of an optical component at each of multiple points. A characteristic of the light beam impinging on the optical component surface at each of the multiple points is modified so as to have multiple different values. Light from the impinging light beam that passes through the optical component at each of the multiple points, with the light beam characteristic at each of the multiple different values, is detected. The non-uniformity of the optical component is determined based on the detected passing light.

Abstract: The invention provides a system and method for reliably and accurately measuring the gap between two materials when the depth of gap is less than the smallest distance that an optical thickness gauge (OTG) is able to measure. The invention is practiced by forming a suitable slot (or a groove, channel, hole or other suitable deformation) having a precisely known depth in at least one material. The sum of the distance of the gap and the depth of the slot is at least equal to the smallest distance that the OTG can measure. The slot is positioned over the materials and under the OTG probe head such that a cavity is formed. The depth of the cavity is measured. Since the distance of the slot is known, the depth of the gap is determined by subtracting the known depth of the slot from the measured depth of the cavity.

Abstract: This invention aims to measure film thickness and film thickness distribution to high precision in a wide range of transparent films. As one example, in a CMP process, the film thickness of an outermost surface layer formed on a step pattern of an actual product can be measured so that high precision film thickness control can be performed. To achieve an increase of processing throughput, the film thickness of an optically transparent film formed on an actual device pattern is controlled to high precision by incorporating a film thickness measuring unit, which performs frequency analysis of a spectral distribution, in a polishing apparatus. As a result, an increase of processing throughput is realized.

Abstract: A method and system are provided for monitoring material buildup on system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate material buildup on system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

Abstract: The invention relates to a method for the geometrical measurement of a material strip (2), whereby the material strip (2) defines a longitudinal direction, whereby, by means of a first measuring device with at least one radiation source (6) and with at least one detector (8), the strip thickness of the material strip (2) is determined, whereby for this purpose the radiation (10) from the radiation source (6) penetrates the material strip (2) at at least one measurement point (12) arranged in the material strip (2), and the resultant weakening of the intensity of the radiation (10) is determined by the corresponding detector (8). It is proposed that, by means of a second measuring device, the transverse contour of the material strip (2) is determined. In this situation, the measurement of the strip thickness and the transverse contour is effected at the same place on the material strip. The measured values of the thickness measurement are corrected with the measured values of the transverse contour.

Abstract: A device is provided for spatially resolved measurement of the thickness of a layer located on a sample carrier (7), said device comprising a light source (1-3) emitting polychromatic radiation with a predetermined spectral composition, illumination optics (4-6) illuminating the sample carrier (7) with radiation from the light source (1-3), detector optics (6, 5, 8) picking up radiation reflected by a line-shaped portion of the sample carrier (7) and guiding said radiation to a polychromator (9, 11) as a line-shaped beam, said polychromator (9, 11) separating the line-shaped beam into a field-shaped spectrum, and a camera (12), which receives the field-shaped spectrum, the polychromator (9, 11) being tuned to the spectral composition of the radiation from the light source.

Abstract: This invention aims to measure film thickness and film thickness distribution to high precision in a wide range of transparent films. As one example, in a CMP process, the film thickness of an outermost surface layer formed on a step pattern of an actual product can be measured so that high precision film thickness control can be performed. To achieve an increase of processing throughput, the film thickness of an optically transparent film formed on an actual device pattern is controlled to high precision by incorporating a film thickness measuring unit, which performs frequency analysis of a spectral distribution, in a polishing apparatus. As a result, an increase of processing throughput is realized.

Abstract: There is provided a clustered device for manufacturing a semiconductor device in which a cleaning chamber, a rapid thermal processing chamber, an optical measurement chamber, and the like are arranged around a load-lock room. In an optical measurement system, there are disposed an exciting light source, a measuring light source, a light detector, a control/analyze system, and the like. During the formation of an oxide film, for example, a wafer is cleaned in the cleaning chamber and then the amount of a natural oxide film remaining on the wafer or the like is measured by optical modulation reflectance spectroscopy in the optical measurement chamber. Thereafter, the wafer is oxidized in the rapid thermal processing chamber. As a result, the surface of the wafer is prevented from being oxidized on exposure to an atmosphere and the surface state of the wafer can be monitored in the course of sequential process steps.

Abstract: A dry processing apparatus includes a processing chamber provided with a measurement window having a reflection portion which totally reflects light on the side of an inner surface thereof and a transmission portion. When a layer is not deposited, measurement light is irradiated so that the light is totally reflected by the reflection portion. A deviation between the measurement light reflected by a surface of the deposited layer and the measurement light reflected by the reflection portion is measured to determine a thickness of the deposited layer. A quantity of light reflected by the surface of the deposited layer is compared with the light quantity in case where irregularities are not formed in the surface of the deposited layer to evaluate a state of irregularities of the surface. The thickness of the deposited layer and a state of the surface of the layer are monitored separately.

Abstract: In a process of forming a film on a surface of a wafer by thermal processing, laser light generated by a light source is depolarized by a depolarizer and the deporlarized light is irradiated upon the surface of wafer. As for the light reflected from the surface of wafer, polarization components in predetermined two directions perpendicular to each other are extracted by a beam splitter, and optical sensors receive the extracted light components to detect each intensity. An analytical processing unit determines a thickness of a formed film based on a change in a difference in intensity.

Abstract: A method of inspecting a process for manufacturing a semiconductor device, used to determine the status of a processing operation during the manufacturing process, according to the embodiment of the present invention, comprises: detecting an image of a desired area of a surface of a semiconductor workpiece after it has been subjected to the processing operation, using an image signal detector; detecting image signal intensity at each pixel of a plurality of pixels of the image signal detector; and determining the status of the processing operation based on the relationship between the image signal intensity and the number of pixels at each of certain levels of the image signal intensity. A method of manufacturing a semiconductor device is made by utilizing the above-described inspection method.

Abstract: The present invention provides an apparatus for measuring the thickness of a material using the focal length of a lensed fiber and an associated method. The lensed fiber generates a Gaussian Beam and moves vertically with respect to the material. The strength of the beam reflected from the material is detected when the beam emitted from the lensed fiber is focused on the material. The thickness of the material is calculated based upon the detected strength of the reflected beam.

Abstract: A spectral ellipsometer includes a light incident optical system for focusing a incidence spot of polarized light of multi-wavelengths onto a sample surface. A detecting optical system receives the reflected light influenced by the sample surface so that the amount of change in an elliptical polarization will be characteristic of the sample surface. A spherical prism polarizer is employed in the light incident optical system having complimentary curved light incident and light exit surfaces to enable the focusing of the incident light so that each of the ray traces of the range of wavelengths are focused at the same position on the sample surface.

Abstract: An ellipsometric metrology apparatus for a sample contained in a chamber. A light source outside the chamber produces the illuminating beam. A polarizing device outside the chamber polarizes the illuminating beam. A window of selected dimensions and features is disposed in a plane substantially parallel to the sample surface and at least partly closes the chamber. A first directing device directs the polarized illuminating beam on to an area of the sample along a first optical path extending from the polarizing device to the area of the sample through the window. The first optical path forms a predetermined oblique angle of incidence relative to the sample surface. A polarization analyzing device is outside the chamber, a second directing device directs the reflected beam resulting from the illumination of the sample by the illuminating beam on to the analyzing device along a second optical path extending from the sample towards the analyzing device through the window.

Abstract: A method and apparatus for detecting properties of reflective transparent surface coatings on a sheet of transparent material, such as a sheet of glass or a sheet of plastic material. One or more light beams are directed at an angle to the surfaces of the material under test and the energy in surface reflections is sensed. The presence and surface location of a surface coating is determined from the relative magnitudes of surface reflections of the light beam. The type of coating is determined from the magnitudes of reflections from the surface coating of one or more different wavelength light beams. The surface coating may be, for example, a Low-E coating, or a metal or metal oxide coating left on a sheet of float glass.

Abstract: An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. In one preferred embodiment, the detector includes eight radially arranged segments, each segment generating an output which represents an integration of multiple angle of incidence. A processor manipulates the output from the various segments to derive ellipsometric information.

Abstract: A film thickness measuring method and apparatus sets forth a spectral reflectance ratio S(&lgr;) at a spot where the film to be measured is present and a spectral reflectance ratio R(&lgr;) at a spot where the film to be measured is not present are measured to determine a spectral reflectance ratio Rmeas(&lgr;)=S(&lgr;)/R(&lgr;). A theoretical value Rcalc(&lgr;) of the spectral reflectance ratio at an assumed film thickness d is determined, and an evaluation value Ed is determined from the total sum of differences between the value of Rmeas(&lgr;) and the value of Rcalc(&lgr;). Assuming that the spectral reflectance ratio Rmeas(&lgr;e) of the film is 1 (Rmeas(&lgr;e)=1), an evaluation value Enewd is determined. The film thickness d is changed to determine an evaluation function Enew(d). An evaluation function ratio PE(d) is determined from E(d)/Enew(d), and a film thickness d that gives a minimum value of the ratio PE(d) is determined to be a measured film thickness D.

Abstract: An apparatus for depositing thin films on a plurality of substrates has a vacuum chamber, a source of the material or materials to be deposited as the thin film, a source of energy for causing the material to be vaporized, and mechanical apparatus for imparting super-planetary and planetary motion to each substrate while the substrate is exposed to the vapors of the material. When a predetermined thickness of the film on any given substrate is reached the super-planetary motion is halted and only planetary motion and spinning are continued for the given substrate. During this process the thickness of the film being deposited is monitored accurately by an optical instrument having a linear axis of measurement which coincides with the center of the orbiting planetary motion of the substrate and is on the substrate itself.

Abstract: A method of determining thickness and refractive index of an optical thin film is described. The method includes generating a diagnostic light beam having a first and a second wavelength. The method also includes measuring unattenuated light intensities at the first and the second wavelength of the diagnostic light beam. The method also includes measuring attenuated light intensities at the first and the second wavelength of the diagnostic light beam after transmission through the optical thin film. A null light intensity for the diagnostic light beam at the first and second wavelength is also determined. A first and second normalized intensity function is determined using the measured unattenuated light intensities, the measured attenuated light intensities, and the measured null light intensities. The thickness and refractive index of the optical thin film is then determined by solving the first and second normalized intensity function for thickness and refractive index.

Abstract: Process and apparatus for automated production of optical devices comprising two plane parallel optical surfaces of a desired optical performance for transmitted light, by measuring and quantifying the spectral response of intensity versus wavelength across the working surface area of a starter optical device as compared to an acceptable computer model, as a three dimensional contour map of optical thickness based on the assumption of a constant index of refraction, then reducing the high spots by automated means such as polishing, and measuring the spectral response again.

Abstract: A method and system to monitor characteristics of films by sensing the spectral emissions of a plasma to which the films are exposed. As a result, the method includes sensing optical energy produced by the plasma. The optical energy has a plurality of spectral bands associated therewith, a subset of which is identified as including information corresponding to the film characteristics. The film characteristics are then measured as a function of this information. To increase the accuracy of the measurements, in one embodiment of the present invention a subgroup of the plurality of spectral bands is observed that has data associated that is substantially independent of the characteristics of interest. The characteristics are then measured as a function of both the information and the data.

Abstract: A metrology system has one or more central ‘metrology servers’ and one or more ‘metrology slaves’ The server delivers metrology ‘pump/probe’ signals to multiple slave systems allowing a reduction in the number of high-cost metrology components in the master system. In certain cases, multiple metrology components in the ‘master’ system may provide redundancy while still maintaining a beneficial cost benefit. Reliability can also be improved by using multiple lasers and multiple delay paths with a cross-point switch between them. If one sub-system goes down, the system may ‘serialize’ metrology operations and thereby maintain all systems running, although at somewhat of a reduced throughput. An important element of this invention is grouping all or most of the costly components in a centralized laser server, and issuing pump-probe pulse pairs to remote metrology heads through a light pipe or other conveyance, such as optical fiber.