Abstract: A CPP type magnetoresistance effect device having a synthetic ferri-pinned spin valve structure including a buffer layer, pinned ferromagnetic layer, nonmagnetic metal intermediate layer, and free ferromagnetic layer and having a free ferromagnetic layer made a specific composition of CoFeAl or CoMnAl, the buffer layer comprising an amorphous metal bottom layer and a nonmagnetic metal top layer. This magnetoresistance effect device increases the output ?RA, reduces the coercivity Hc and the amount of shift Hin from a zero magnetic field to increase the sensitivity, and increases the magnetic field Hua of the resistance half point to increase the pin stability. A magnetic head, magnetic recording system, and magnetic random access memory using this magnetoresistance effect device are also disclosed.

Abstract: A magnetic recording/reproducing apparatus has a magnetoresistive head having a magnetoresistive film through which a current is flowed in a direction substantially perpendicular to a film plane and a pair of magnetic shields disposed to sandwich the magnetoresistive film, and a preamplifier which supplies a sense current to the magnetoresistive head in constant-current driving.

Abstract: A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. Furthermore, an upper conductive layer is provided on the upper layer and an insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

Abstract: A magnetic sensor includes a spacer having at least a nonmagnetic metal layer inserted between the upper shield layer and the longitudinal bias layers or between the upper shield layer and the longitudinal bias layers plus the magnetoresistive film, the shortest distance between the longitudinal bias layers and the free layer of the magnetoresistive film is set smaller than the shortest distance between the longitudinal bias layers and the upper shield layer, and this arrangement ensures that the amount of magnetic flux entering the magnetoresistive film from the longitudinal bias layers is larger than that absorbed by the upper shield layer, thus realizing a magnetic sensor whose Barkhausen noise is suppressed.

Abstract: A method is presented for fabricating a read head having a read head sensor and a hard bias/lead layer which includes depositing a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material is deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias/lead material is then deposited on the regions of sensor material and fast-milling dielectric material to form first and second leads and a cap on each of these regions. The cap of hard bias/lead material and the masking material is then removed from each of these regions.

Abstract: A laminated ferrimagnetic thin film consists of two ferromagnetic layers and a non-magnetic intermediate layer sandwiched therebetween. The respective ferromagnetic layers are magnetically coupled in an antiferromagnetic manner through the non-magnetic intermediate layer. Each ferromagnetic layer consists of a plurality of layers. In each ferromagnetic layer, a layer which is in contact with the non-magnetic intermediate layer is formed of Co or an alloy including Co while at least one layer is formed of Ni or an alloy including Ni, and its film thickness is determined to be at least 60% or more of a film thickness of each ferromagnetic layer.

Abstract: In one illustrative example, a spin valve sensor includes a free layer structure; an anti-parallel (AP) pinned layer structure which includes at least a first AP pinned layer; and a non-magnetic electrically conductive spacer layer formed between the free layer structure and the AP pinned layer structure. First and second antiferromagnetic (AFM) pinning layer structures for magnetically pinning the first AP pinned layer are formed in end regions but are absent from its central region. Edges of each AFM pinning layer structure may be separated by a distance DA from the sensor edges. The first AP pinned layer is formed in both the central region and the end regions so as to be in contact with the first and second AFM pinning layer structures. Advantageously, adequate pinning properties are exhibited in a sensor which provides the benefits of a self-pinned sensor (e.g. a reduced sensor profile in the central region).

Abstract: A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP magnetic detecting element, the upper and lower surfaces of a pinned magnetic layer is disposed between nonmagnetic metal magnetostriction-enhancing layers. CPP magnetic detecting elements allow this structure without degrading the GMR effect. Thus, the magnetostriction coefficient of the pinned magnetic layer can be increased from above and below to produce an appropriate magnetoelasticity. Consequently, the magnetization of the pinned magnetic layer can be more firmly fixed.

Abstract: A capping layer employed with a spin valve sensor includes a first capping layer, formed from a refractory metal, and a second capping layer formed from silicon. The interface between the refactory metal layer and the silicon layer form a silicide that provides a large compressive stress on the underlying spin valve sensor. The compressive stress, advantageously, increases the pinning field in the self-pinned pinned layer structure, while providing a high resistivity so that less sense current is shunted by the capping layer structure compared to an all metal capping layer structure that provides a comparable compressive stress.

Abstract: A metal manganese oxide buffer layer is used to seed a barrier layer in a magnetic tunnel junction memory element having pinned and free magnetic layers. An alumina tunnel barrier layer is formed on the oxidized metal manganese layer with the barrier layer and oxidized metal manganese layer being between the pinned or free ferromagnetic layers.

Abstract: A pair of domain control layers are disposed on both sides of the track width direction of the MR film so as to be separated from each other such that the MR film is held therebetween, and apply a longitudinal magnetic field to the MR film (free layer). The MR film is flanked by the domain control layers, each including a layer structure constituted by a base layer, a ferromagnetic layer, and a hard magnetic layer. The base layer causes the hard magnetic layer to have a magnetization direction aligning with an in-plane direction, so as to enhance the coercive force of the hard magnetic layer.

Abstract: A magnetic head has a base, and a magneto-resistive device supported by the base. The magneto-resistive device includes a magneto-resistive layer formed on one surface side of the base, and a first film. The first film is formed to be in contact with an effective region effectively involved in detection of magnetism in the magneto-resistive layer on both sides or one side of the effective region in a track width direction without overlapping with the effective region. The track width direction is substantially parallel to a film surface of the magneto-resistive layer. The first film is a single-layer film or a multiple-layer film. The first film includes a soft magnetic layer which does not form part of a layer for applying a biasing magnetic field to the free layer. The soft magnetic layer contributes to a reduction in side reading.

Abstract: A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated) and having a Ta cap layer with nitrogen added in situ during deposition. The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than on monolayer. The amount of nitrogen deposited on top of the alumina substrate is riot enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface. The nitrogen in the cap layer can be formed by depositing a Ta cap layer in a sputter deposition chamber having a small amount of nitrogen in an Ar atmosphere.

Abstract: A magnetic sensing element includes a composite film, a lower shield layer, and a lower electrode layer and an upper electrode layer for supplying a current perpendicular to the composite film. The composite film has an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer. The composite film has a top face and two side faces in a track width direction. Each of the two side faces has a bent position. The angle defined by the side face below the bent position and the top face is larger than the angle defined by the side face above the bent position and the top face. The bent portion preferably lies on the lower electrode layer or the lower shield layer.

Abstract: A magnetoresistive element has two magnetic layers and a nonmagnetic middle layer having organic molecules disposed between the two magnetic layers. The middle layer is thinner than 5 nm (50 ?). The magnetoresistive element exhibits a magnetoresistive effect as a function of the relative alignment of magnetizations of the first and the second magnetic layers and can be used in a magnetoresistive sensor in the based on GMR or TMR.

Abstract: A magnetic detecting device is provided. The magnetic detecting device includes a magnetoresistive effect part having a fixed magnetic layer, and a free magnetic layer which faces the fixed magnetic layer with a nonmagnetic material layer therebetween and which varies in magnetization by an external magnetic field. A seed layer is provided below the magnetoresistive effect part. The seed layer includes an Al layer laminated on an NiFeCr layer.

Abstract: A magnetoresistive effect element includes a magnetoresistive effect film including a magnetization pinned layer, a magnetization free layer, and an intermediate layer interposed therebetween and having a magnetic region and a nonmagnetic region whose electrical resistance is higher than the magnetic region. A sense current is passed to the magnetoresistive effect film in a direction substantially perpendicular to the film plane thereof. The magnetic region of the intermediate layer penetrates the nonmagnetic region locally and extends in the direction substantially perpendicular to the film plane. The nonmagnetic region contains a nonmagnetic metallic element having a larger surface energy than a magnetic metallic element contained in the magnetic region.

Abstract: A magnetoresistive head including a magnetoresistive element, and two shield layers sandwiching the magnetoresistive element. The magnetoresistive element includes an antiferromagnetic layer a pinned layer in exchange coupling with the antiferromagnetic layer, a free layer whose magnetization rotates or switches according to a media magnetic field, and an intermediate layer between the free layer and the pinned layer. The intermediate layer includes magnetic grains surrounded by an insulator. The magnetic grains connect the free layer and the pinned layer by means of a nano contact. The free layer is oversized with respect to the pinned layer and the intermediate layer which are distanced from a media side end of the shield layers.

Abstract: A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.

Abstract: A Current-Perpendicular-to-Plane (CPP) Giant Magneto-Resistance (GMR) sensor (700/800) has either a composite film (708) embedded into a ferromagnetic reference layer (710) or a composite film (806) embedded into a ferromagnetic keeper layer (804). The embedded composite film is deposited by sputtering from a ferromagnetic metallic target and a non-magnetic oxide target simultaneously or sequentially. Varying sputtering powers of the ferromagnetic metallic and non-magnetic oxide targets leads to various volume fractions of ferromagnetic metallic and non-magnetic oxide phases. By carefully adjusting these volume fractions, the product of junction resistance and area of the CPP GMR sensor (700/800) can be finely tuned to a designed value and thus provide optimum read performance of the CPP GMR sensor (700/800) for magnetic recording at ultrahigh densities.

Abstract: A longitudinal bias magnetic field control layer applies a counter bias magnetic field to a soft magnetic layer that is antiparallel (in opposite direction) to a longitudinal bias magnetic field. A magnitude of the counter bias magnetic field applied to the soft magnetic layer by the longitudinal bias magnetic field control layer is set smaller than that of the longitudinal bias magnetic field at a track center portion of the soft magnetic layer applied by a pair of bias magnetic field applying layers. A substantial longitudinal bias magnetic field is substantially applied to the soft magnetic layer in the same direction as that of the longitudinal bias magnetic field, and a magnitude of the substantial longitudinal bias magnetic field is maximum at both end portions of the soft magnetic layer and is weakened at the center portion of the soft magnetic layer.

Abstract: A free magnetic layer contains free magnetic material layers and an intermediate layer interposed therebetween. A fixed magnetic layer contains fixed magnetic material layers and a non-magnetic intermediate layer interposed therebetween. The free magnetic material layer and the fixed magnetic material layers are formed at equivalent film positions. The magnetizations of the fixed magnetic material layers provided in a vertical direction are antiparallel to each other, and the magnetizations of the free magnetic material layers provided in the vertical direction are antiparallel to each other. By an external magnetic field, the magnetizations of the free magnetic material layer are rotated in phase to magnetization directions of the fixed magnetic material layers.

Abstract: A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements.

Abstract: A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.

Abstract: Disclosed are a magnetic sensing element in which side reading can be prevented, read sensitivity can be improved, and gap narrowing is enabled, and a method for fabricating the same. A magnetic sensing element includes a pair of first antiferromagnetic layers separated by a first spacer section. A first spacer layer is disposed in the first spacer section. The first spacer layer has the same composition as that of the first antiferromagnetic layers, and has a disordered crystal structure with a thickness that is smaller than that of the first antiferromagnetic layers. A first free magnetic layer is disposed on the continuous surface including the upper surfaces of the first antiferromagnetic layers and the first spacer layers. The magnetic sensing element also includes a nonmagnetic interlayer, a second free magnetic layer, and a pair of second antiferromagnetic layers separated by a second spacer section on the second free magnetic layer.

Abstract: A magnetoresistance effect element is manufactured in the steps in which a first ferromagnetic layer is formed on a substrate, the first ferromagnetic layer is patterned to form a pinned layer, in the shape of a strip, having both end portions to which electrode pads are formed, the pinned layer is etched, for example, through ion milling, so as to form at least one nano-contact portion, an insulating layer is formed by embedding an insulating material into the etched pinned layer around the nano-contact portion, a second ferromagnetic layer is formed so as to contact at least the nano-contact portion, and this second ferromagnetic layer is patterned to form a free layer, in shape of strip, having both end portions to which electrode pads are formed.

Abstract: A method for forming a bottom spin-valve GMR sensor having ultra-thin layers of high density and smoothness and possessing oxygen surfactant layers as a result of the layers being sputtered in a mixture of Ar and O2. A particularly novel feature of the method is the use of a sputtering chamber with an ultra-low base pressure and correspondingly ultra-low pressure mixtures of Ar and O2 sputtering gas (<0.5 millitorr) in which the admixed oxygen has a partial pressure of less than 5×10?9 torr.

Abstract: A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer, a magnetization free layer, and a nonmagnetic intermediate layer. A magnetization direction of the magnetization pinned layer is substantially fixed in an external magnetic field, a magnetization direction of the magnetization free layer is configured to change in the external magnetic field, and the nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer and has a stacked structure of a first non-metallic intermediate layer/a metal intermediate layer/a second non-metallic intermediate layer. The magnetoresistive element also includes a pair of electrodes coupled to the magnetoresistive film and is configured to provide a current in a direction substantially perpendicular to a surface of the magnetoresistive film.

Abstract: A method for forming an abutted junction GMR bottom spin valve sensor in which the free layer has a maximum effective length due to the elimination or minimization of bias layer and conducting lead layer overspreading onto the sensor element and the consequent reduction of current shunting. The overspreading is eliminated by forming a thin dielectric layer on the upper surface of the sensor element. When the biasing and conducting leads are formed on the abutted junction, they overspread onto this layer and the overspread can be removed by an ion-milling process during which the dielectric layer protects the sensor.

Abstract: At both end portions of at least a soft magnetic layer of a magneto-resistive effect film, a pair of bias magnetic field applying layers are disposed for applying a longitudinal bias magnetic field to the soft magnetic layer via magnetic underlayers. Further, mutual lattice point-to-point distances in the plane where each magnetic underlayer and the corresponding bias magnetic field applying layer are mated, are substantially equalized to each other. Therefore, a coercive force Hc in an in-plane direction (direction parallel to a film surface) of each bias magnetic field applying layer can be maintained at a high level so that even when further gap narrowing or track narrowing is aimed, the bias magnetic field applying layers can act to apply an effective bias magnetic field, i.e. can act to suppress occurrence of the Barkhausen noise.

Abstract: The present invention provides a thin film magnetic head and a method of manufacturing the same in which a magnetic sensitive layer can be formed as a single magnetic domain while adapting the head to higher recording density and, further, which can display a higher resistance change rate. While narrowing the magnetic sensitive layer, a vertical bias magnetic field having both sufficient intensity and uniformity can be applied to the magnetic sensitive layer. As a result, it can be promoted to form the magnetic sensitive layer as a single magnetic domain while adapting the head to higher recording density, so that reading operation can be performed more stably. Particularly, in the case of passing sense current in the thickness direction to an MR film, a higher magnetoresistive change rate can be obtained.

Abstract: A bottom-pinned current-in-the-plane spin-valve magnetoresistive sensor has a dual metal-oxide capping layer on the top ferromagnetic free layer. The first capping layer is formed on the free layer and is one or more oxides of zinc (Zn). The second capping layer is formed on the first capping layer and is an oxide of a metal having an affinity for oxygen greater than Zn, such as one or more oxides of Ta, Al, Hf, Zr, Y, Ti, W, Si, V, Mg, Cr, Nb, Mo and Mn.

Abstract: A magnetoresistanee effect element comprises a free layer composed of a ferromagnetic layer, a pinned layer composed of a ferromagnetic layer, and a layer disposed between the free layer and the pinned layer and including at least one nano-contact portion disposed between the free layer and the pinned layer. The nano-contact portion has a dimension, including at least one of a length in the layer lamination direction and a length in a direction normal to the layer lamination direction, being not more than Fermi length. The nano-contact portion is provided, in an inside portion thereof, with a magnetic wall composed of either one of Bloch magnetic wall, Neel magnetic wall or a combination wall thereof.

Abstract: A method and apparatus for providing a ballistic magnetoresistive sensor in a current perpendicular-to-plane mode is disclosed. A nickel nano-contact is provided in a current perpendicular-to-plane sensor. The nano-contact switches its magnetization with the switching of the free layer to provide an increase in resistance that is used to detect magnetically recorded data.

Abstract: A magnetoresistive element that detects a change of magnetoresistance by giving a sense current in the thickness direction of a magnetoresistive effect film including at least a base layer, a free layer, a non-magnetic layer, a pinned layer, a pinning layer, and a protection layer, includes a granular structure layer that includes conductive particles and an insulating matrix material in the form of a thin film containing the conductive particles in a dispersed state and having a smaller thickness than the particle diameter of the conductive particles, the granular structure layer being interposed between at least two adjacent layers among the base layer, the free layer, the non-magnetic layer, the pinned layer, the pinning layer, and the protection layer.

Abstract: In one illustrative example of the invention, a spin valve sensor of a magnetic head has a sensor stack structure which includes a free layer structure and an antiparallel (AP) pinned layer structure separated by a spacer layer. A capping layer structure formed over the sensor stack structure includes a layer of cobalt (e.g. pure cobalt, oxidized cobalt, or cobalt-iron) as well as a layer of tantalum formed over it. Advantageously, the cobalt layer in the capping layer structure enhances the GMR and soft magnetic properties for thinner freelayer structures while maintaining a desirable slightly negative magnetostriction.

Abstract: The thin-film magnetic head of the present invention is a CPP type head and comprises an anti-ferromagnetic layer, a pinned layer, a free layer, and a nonmagnetic layer disposed between the pinned layer and the free layer. The pinned layer is provided with a multilayer part comprising a first layer formed from Cu; a second layer formed from Cu and disposed closer to the free layer than is the first layer; and an intermediate layer. The intermediate layer is disposed between the first and second layers while in contact therewith, and is formed with a partly oxidized ferromagnetic layer.

Abstract: A magnetic disk apparatus has a magnetic recording medium including a recording layer formed on a nonmagnetic substrate, and a magnetic head including a magnetoresistive film arranged above the magnetic recording medium and a pair of electrodes formed on both surfaces of the magnetoresistive film along a track direction so as to make a sense current flow in a direction perpendicular to a plane of the magnetoresistive film. The recording layer has an easy axis of magnetization in a direction perpendicular to a track width direction, which is a direction of a magnetic field generated by the flow of the sense current, a ratio MA/Me of which recording layer is smaller than 0.6, where MA is a remanent magnetization in the track width direction and Me is a remanent magnetization in the direction of the easy axis of magnetization.

Abstract: A magnetoresistance effect has a lamination structure comprising a free layer including at least two ferromagnetic layers, a pinned layer including two ferromagnetic layers; and at least one nano-contact portion composed of a single ferromagnetic layer and disposed between the free layer and the pinned layer. A distance between the free layer and the pinned layer, i.e., thickness of the nano-contact portion in the lamination direction, is not more than Fermi length, preferably less than 100 nm.

Abstract: Currently, in a process of manufacturing a top spin valve structure, the shield-to-shield separation of a spin valve head cannot be below about 800 ?, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer.

Abstract: Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer and a nonmagnetic protective layer on a lower insulated gap layer. The amount of etching of the lower insulated gap layer produced in the process of patterning the spin-valve giant magnetoresistive layers into the multiple thin films of spin-valve GMR sensor is 10 nm or less. Further, the angle ? which the tangent line of each side face of the multiple thin films to the middle line of the free magnetic layer in its thickness direction forms with respect to the middle line of the free magnetic layer becomes 45 degrees or more. This structure makes it possible to provide such a spin-valve giant magnetoresistive head that it meets the requirements for securing constant breakdown voltage and preventing instability of MR output voltage waveform.

Abstract: Several embodiments of a sense current perpendicular to the planes of the sensor (CPP) and flux guide type of read head has a gap between first and second shield layers at an air bearing surface (ABS) where the flux guide is located which is less than a gap between the first and second shield layers at a recessed location where the sensor is located. This reduced gap increases the linear bit density capability of the read head. A longitudinal bias stack (LBS) is located in the sensor stack. Several unique methods of construction are described for forming the magnetic head assemblies.

Abstract: A transducing head includes a multilayered magnetoresistive sensor having an air bearing sidewall opposite aback sidewall and a first sidewall opposite a second sidewall. A specular layer is positioned on at least one of the air bearing sidewall, the back sidewall, the first sidewall, and the second sidewall. Each sidewall is transverse to the layers of the magnetoresistive sensor.

Abstract: A GMR read head for a magnetic head, in which the hard bias layers are fabricated immediately next to the side edges of the free magnetic layer, and such that the midplane of the hard bias layer and the midplane of the free magnetic layer are approximately coplanar. The positioning of the hard bias layer is achieved by depositing a thick hard bias seed layer, followed by an ion milling step is to remove seed layer sidewall deposits. Thereafter, the hard bias layer is deposited on top of the thick seed layer. Alternatively, a first portion of the hard bias seed layer is deposited, followed by an ion milling step to remove sidewall deposits. A thin second portion of the seed layer is next deposited, and the hard bias layer is then deposited.

Abstract: Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

Abstract: A method of initializing a magnetic sensor and storage system implementing such a magnetic sensor. The method includes heating and cooling dual antiferromagnetic layers in the presence of a magnetic field.

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer, and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer.

Abstract: A method of manufacturing a magnetoresistance effect device, including: forming a first ferromagnetic body, a nonmagnetic dielectric layer on the first ferromagnetic body, and a second ferromagnetic body on the nonmagnetic dielectric layer; etching part of an external region of a predetermined ferromagnetic tunnel junction region using a first linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region; and etching another part of the external region of the predetermined ferromagnetic tunnel junction region using a second linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region and intersecting with the first linear mask pattern.

Abstract: Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

Abstract: A method and system for forming a microscopic transducer are described. The method and system include forming a plurality of adjoining sensor layers. The sensor layers include a first magnetically soft layer, a nonmagnetic layer on the first magnetically soft layer, and a second magnetically soft layer on the nonmagnetic layer. The method and system also include forming a sidewall over the second magnetically soft layer. The sidewall formation includes forming a base having a surface oriented substantially perpendicular to the sensor layers and depositing an electrically conductive material on the surface. The method and system also include removing a portion of the sensor layers not covered by the sidewall.