Abstract: A data reader can be configured with at least a magnetoresistive stack contacting one or more magnetic shields. The magnetoresistive stack can be separated from a magnetic shield by a seed lamination on an air bearing surface with the seed lamination consisting of at least three sub-layers that are constructed with different material compositions.

Abstract: A lateral spin valve reader that includes a detector structure located proximate to a bearing surface and a spin injection structure located away from the bearing surface. The lateral spin valve reader also includes a channel layer extending from the detector structure to the spin injection structure. An exterior cladding, disposed around the channel layer, suppresses spin-scattering at surfaces of the channel layer.

Abstract: A magnetic read apparatus includes a read sensor, a shield structure and a side magnetic bias structure. The read sensor includes a free layer having a side and a nonmagnetic spacer layer. The shield structure includes a shield pinning structure and a shield reference structure. The nonmagnetic spacer layer is between the shield reference structure and the free layer. The shield reference structure is between the shield pinning structure and the nonmagnetic spacer layer. The shield pinning structure includes a pinned magnetic moment in a first direction. The shield reference structure includes a shield reference structure magnetic moment weakly coupled with the pinned magnetic moment. The side magnetic bias structure is adjacent to the side of the free layer.

Abstract: The present invention makes it possible to inhibit an MR ratio from decreasing by high-temperature heat treatment in a magnetoresistive effect element using a perpendicular magnetization film. The magnetoresistive effect element includes a data storage layer, a data reference layer, and an MgO film interposed between the data storage layer and the data reference layer. The data storage layer includes a CoFeB film coming into contact with the MgO film, a perpendicular magnetization film, and a Ta film interposed between the CoFeB film and the perpendicular magnetization film. The CoFeB film is magnetically coupled to the perpendicular magnetization film through the Ta film.

Abstract: A method operates a digital measurement unit and an ambient temperature control unit as to a plurality of TMR sensors, each having a geometry including area Amr and tunnel barrier thickness tB. The method includes dividing the plurality of TMR sensors into test groups. For each test group, the method includes setting the ambient air temperature Tair, applying a voltage pulse at Vdeg and time ?p Npulse times until dielectric breakdown, and appending Npulse and ?p to a dataset. The method includes fitting a survival fraction of form: S ? ( t deg , ? db ) = ? - ( t deg ? db ) ? versus Npulse, wherein tdeg=Npulse·?p, to determine ? and ?db. The method includes determining a temperature rise based on ?p, determining, based on the temperature rise, ?mr(?db,Amr), and determining T mr = T air + P mr ? mr ? ( ? db , A mr ) based on ?mr(?db,Amr).

Abstract: An apparatus includes a capping layer disposed on top of a free layer. The apparatus also includes a magnetic etch stop layer disposed on top of the capping layer. The capping layer and the magnetic etch stop layer are included in a spin-transfer torque magnetoresistive random access memory (STT-MRAM) magnetic tunnel junction (MTJ) device.

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract: A magnetoresistive random access memory (MRAM) structure includes a bottom electrode structure. A magnetic tunnel junction (MTJ) element is over the bottom electrode structure. The MTJ element includes an anti-ferromagnetic material layer. A ferromagnetic pinned layer is over the anti-ferromagnetic material layer. A tunneling layer is over the ferromagnetic pinned layer. A ferromagnetic free layer is over the tunneling layer. The ferromagnetic free layer has a first portion and a demagnetized second portion. The MRAM also includes a top electrode structure over the first portion.

Abstract: A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer of the structure is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

Abstract: The present invention is directed to a spin transfer torque (STT) MRAM device having a perpendicular magnetic tunnel junction (MTJ) memory element. The memory element includes a perpendicular MTJ structure in between a non-magnetic seed layer and a non-magnetic cap layer. The MTJ structure comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween, an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure, and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. At least one of the magnetic free and reference layer structures includes a non-magnetic perpendicular enhancement layer, which improves the perpendicular anisotropy of magnetic layers adjacent thereto.

Abstract: A GMR element includes a fixed magnetic layer in which magnetization is fixed; a free magnetic layer in which magnetization is changed by an external magnetic field; and a spacer layer which is positioned between the fixed magnetic layer and the free magnetic layer, in which the free magnetic layer is formed by laminating a CoFe alloy and a CoFeB alloy. A current sensor uses the GMR element.

Abstract: A magnetic read head including a first read element magnetically coupled to a bottom shield; a second read element magnetically coupled to a top shield; a magnetic shielding structure that magnetically shields the first read element from the second read element; and a first electrical contact electrically coupled to the bottom shield, a second electrical contact electrically coupled to the top shield and a third electrical contact electrically coupled to the magnetic shielding structure.

Abstract: A magnetic memory includes: a base layer; a magnetization free layer; a barrier layer; and a magnetization reference layer. The magnetization free layer, with which the base layer is covered, has invertible magnetization and is magnetized approximately uniformly. The barrier layer, with which the magnetization free layer is covered, is composed of material different from material of the base layer. The magnetization reference layer is arranged on the barrier layer and has a fixed magnetization. When the magnetization of the magnetization free layer is inverted, a first writing current is made to flow from one end to the other end of the magnetization free layer in an in-plane direction without through the magnetization reference layer.

Abstract: A TMR element includes a stack having a sidewall, and an insulating layer in contact with the sidewall. The stack includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer located between the first and second ferromagnetic layers. The insulating layer includes an island-like structure section in contact with only a part of the sidewall, and a coating section covering the island-like structure section and the sidewall. The tunnel barrier layer contains a first oxide. The island-like structure section contains a second oxide. Each of the first and second oxides is a metal oxide or semiconductor oxide. G2?G1 is 435 kJ/mol or smaller, where G1 and G2 are standard Gibbs energies of formation at 280° C. of the first oxide and the second oxide, respectively.

Abstract: A method of manufacturing a storage element by forming a magnetic layer; and forming a tunnel barrier layer on the magnetic layer, wherein, n the forming a tunnel barrier layer, the tunnel barrier layer is formed to a predetermined thickness in at least two steps in a divided manner.

Abstract: Techniques are disclosed for enhancing performance of a perpendicular magnetic tunnel junction (MTJ) by implementing an additional ferromagnetic layer therein. The additional ferromagnetic layer can be implemented, for example, in or otherwise proximate either the fixed ferromagnetic layer or the free ferromagnetic layer of the perpendicular MTJ. In some embodiments, the additional ferromagnetic layer is implemented with a non-magnetic spacer, wherein the thickness of the additional ferromagnetic layer and/or spacer can be adjusted to sufficiently balance the energy barrier between parallel and anti-parallel states of the perpendicular MTJ. In some embodiments, the additional ferromagnetic layer is configured such that its magnetization is opposite that of the fixed ferromagnetic layer.

Abstract: Enhanced Hc and Hk in addition to higher thermal stability up to at least 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. Dusting layers are deposited at room temperature to 400° C. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell for STT-MRAM designs.

Abstract: A method for fabricating magnetoresistive random access memory (MRAM) devices on a tight pitch is provided. The method generally includes etching a pattern of columns into a hardmask layer disposed on a magnetic tunnel junction (MTJ) disposed on a substrate having electrically conductive contacts, the MTJ comprising a tunnel barrier layer between first and second ferromagnetic layers, the pattern of columns aligned to the electrically conductive contacts; etching the first ferromagnetic layer to expose the tunnel barrier layer and to form columns comprising the hardmask layer and the first ferromagnetic layer; forming a passivation layer on the exposed tunnel barrier layer and on top side surfaces of the columns; and etching the passivation layer on the exposed tunnel barrier layer, the exposed tunnel barrier layer, and the second ferromagnetic layer to form columns comprising the hardmask layer, the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer.

Abstract: According to an embodiment, a magnetic recording head includes a main magnetic pole and a spin torque oscillator. The spin torque oscillator includes a first perpendicular free layer, a second perpendicular free layer, and a first spacer layer, each of the first perpendicular free layer and the second perpendicular free layer including a magnetic anisotropy axis in a direction perpendicular to a film plane of the spin torque oscillator. An effective perpendicular magnetic anisotropy magnetic field of the first perpendicular free layer is smaller than an effective perpendicular magnetic anisotropy magnetic field of the second perpendicular free layer, and a current is applied from the first perpendicular free layer side to the second perpendicular free layer side.

Abstract: Embodiments disclosed herein generally relate to a magnetic head having an amorphous ferromagnetic reference layer. The ferromagnetic reference layer may have amorphous structure as a result of an amorphous ferromagnetic underlayer that the ferromagnetic reference layer is deposited thereon. The amorphous ferromagnetic reference layer enhances magnetoresistance, leading to an improved magnetic head.

Abstract: Circuitry and a method provide a plurality of timed control and bias voltages to sense amplifiers and write drivers of a spin-torque magnetoresistive random access memory array for improved power supply noise rejection, increased sensing speed with immunity for bank-to-bank noise coupling, and reduced leakage from off word line select devices in an active column.

Abstract: A magnetoresistive sensing system includes a current-perpendicular-to-the-plane magnetoresistive (CPP-MR) read head and adjustable biasing circuitry connected to the read head for adjusting the relative magnetizations of one or more of the ferromagnetic layers in the read head. The biasing circuitry generates a bias current in the read head that generates a bias-adjusting magnetic field that acts on one or more of the ferromagnetic layers. For a conventional read head, the bias-adjusting field acts orthogonal to the field from the reference layer to change the angle between the magnetization of the free layer and the magnetization of the reference layer. For a scissoring-type read head, the bias-adjusting field acts parallel to the transverse bias field to change the angle between the magnetizations of the two free layers. This results in an improvement in the sensitivity of the read head to bring the soft error rate (SER) below an acceptable level.

Abstract: Determining quality metrics of recorded data on a magnetic recording medium. Each of two or more read element arrays include one or more read elements, each including a sensor. Each array differs from the other arrays in one or more construction characteristics such that each array has a different sensitivity to one or more characteristics of magnetic transitions recorded on a magnetic recording medium. Each array produces respective electrical signals that are characteristic of magnetic transitions recorded on a magnetic recording medium. A computer receives information from the electrical signals and analyzes the signal information to determine one or more values associated with one or more quality metrics of the magnetic transitions.

Abstract: A magnetic sensor includes a channel layer, a magnetization free layer placed on a first section of the channel layer, and a magnetization-fixed layer placed on a second section of the channel layer. A thickness of the channel layer of the first section is different from a thickness of the channel layer of the second section and a resistance of an interface between the channel layer and the magnetization free layer is lower than a resistance of an interface between the channel layer and the magnetization-fixed layer.

Abstract: A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

Abstract: A method of manufacturing a magnetic memory cell, includes forming a tunnel barrier layer over a first magnetic layer, forming a second magnetic layer over the tunnel barrier layer, forming a mask over the second magnetic layer, etching an unmasked part of the second magnetic layer to an intermediate position of the second magnetic layer in a thickness direction of the second magnetic layer, and forming a metallic oxide layer by oxidizing an unetched part of the unmasked part of the second magnetic layer.

Abstract: Embodiments disclosed herein generally relate to a TMR sensor for reading a recording from a magnetic recording medium using TMR, and in particular, to a magnetic capping structure of the TMR sensor. The sensor comprises a free layer and a magnetic capping structure. The magnetic capping structure comprises a ferromagnetic capping layer and an absorption layer formed on the ferromagnetic capping layer. The absorption layer is adapted to absorb molecules from the ferromagnetic capping layer and prevent the ferromagnetic capping layer from diffusing into the free layer.

Abstract: A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.

Abstract: A method of forming and a magnetoresistive random access memory (MRAM) device. In an embodiment, the MRAM device includes a magnetic tunnel junction (MTJ) disposed over a bottom electrode, the magnetic tunnel junction having a first sidewall, a top electrode disposed over the magnetic tunnel junction, and a dielectric spacer supported by the magnetic tunnel junction and extending along sidewalls of the top electrode, the dielectric spacer having a second sidewall substantially co-planar with the first sidewall of the magnetic tunnel junction.

Abstract: Provided is a magnetic memory device with a magnetic tunnel junction on a substrate. The magnetic tunnel junction may include a first magnetic structure and a second magnetic structure spaced apart from each other with a tunnel barrier interposed therebetween. When viewed in a cross-sectional view, a width of the tunnel barrier may be larger at an upper level thereof than at a lower level thereof.

Abstract: Various embodiments relate to an apparatus having an array of sensors sharing a common media-facing surface, each sensor having an active sensing region, magnetic shields flanking the active sensing region, and gaps between the active sensing region and the magnetic shields. At least one of the gaps includes an electrically conductive layer having a refractory material. Other embodiments relate to an apparatus having a sensor with an active sensing region, magnetic shields flanking the active sensing region, and gaps between the active sensing region and the magnetic shields. At least one of the gaps includes an electrically conductive layer having a modified region at a media facing side thereof, the modified region being at least one of nonconductive and mechanically hardened.

Abstract: According to a first embodiment of the present invention, a magnetic tunnel junction device comprises: a free layer having a magnetization in a variable direction; a pinned layer having a magnetization in a pinned direction; and a tunnel insulation film formed between the free layer and the pinned layer, wherein the pinned layer includes a ferromagnetic film and an amorphous metal film. In addition, a magnetic device according to a second embodiment of the present invention comprises: an amorphous or nanocrystal material layer; and a perpendicular magnetic anisotropic material layer formed on the amorphous or nanocrystal material layer. The amorphous or nanocrystal material layer is a predefined amorphous material or nanocrystal material layer serving as a lower layer, and the perpendicular magnetic anisotropic material layer is formed on the amorphous or nanocrystal material layer.

Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic recording material of the first electrode comprises a first crystalline magnetic region, in one embodiment comprising Co and Fe. In one embodiment, the first electrode comprises a second amorphous region comprising amorphous XN, where X is one or more of W, Mo, Cr, V, Nb, Ta, Al, and Ti. In one embodiment, the first electrode comprises a second region comprising Co, Fe, and N.

Abstract: Spin transfer torque memory elements and memory devices are provided. In one embodiment, the spin transfer torque memory element includes a first portion including CoFeB, a second portion including CoFeB, an intermediate portion interposed between the first and second portions, a third portion adjoining the second portion opposite the intermediate portion, and a fourth portion adjoining the third portion opposite the second portion. The intermediate portion includes MgO. The third portion includes at least one of Ag, Au, Cr, Cu, Hf, Mo, Nb, Os, Re, Ru, Ta, W, and Zr. The fourth portion includes at least alloy of CoPt, FePt, and Ru.

Abstract: According to one embodiment, a spin-valve element includes a nonmagnetic unit, a first magnetic unit, a second magnetic unit, a third magnetic unit, a current source, and a voltage sensor. The current source is connected to the second magnetic unit and the third magnetic unit. The current source causes a current to flow between the second magnetic unit and the third magnetic unit via the nonmagnetic unit. The voltage sensor is connected to the second magnetic unit and the third magnetic unit. A maximum length of a contact surface between the first magnetic unit and the nonmagnetic unit is not more than a spin diffusion length of the nonmagnetic unit. A length of the first magnetic unit in a direction orthogonal to the contact surface is not more than 3 times a spin diffusion length of the first magnetic unit. The first magnetic unit does not contact an external electrode.

Abstract: Techniques are disclosed for enhancing performance of a perpendicular magnetic tunnel junction (MTJ) by implementing an additional ferromagnetic layer therein. The additional ferromagnetic layer can be implemented, for example, in or otherwise proximate either the fixed ferromagnetic layer or the free ferromagnetic layer of the perpendicular MTJ. In some embodiments, the additional ferromagnetic layer is implemented with a non-magnetic spacer, wherein the thickness of the additional ferromagnetic layer and/or spacer can be adjusted to sufficiently balance the energy barrier between parallel and anti-parallel states of the perpendicular MTJ. In some embodiments, the additional ferromagnetic layer is configured such that its magnetization is opposite that of the fixed ferromagnetic layer.

Abstract: A design for a microwave assisted magnetic recording device is disclosed wherein a spin torque oscillator (STO) between a main pole and write shield has a spin polarization (SP) layer less than 30 Angstroms thick and perpendicular magnetic anisotropy (PMA) induced by an interface with one or two metal oxide layers. Back scattered spin polarized current from an oscillation layer is used to stabilize SP layer magnetization. One or both of the metal oxide layers may be replaced by a confining current pathway (CCP) structure. In one embodiment, the SP layer is omitted and spin polarized current is generated by a main pole/metal oxide interface. A direct current or pulsed current bias is applied across the STO. Rf current may also be injected into the STO to reduce critical current density. A write gap of 25 nm or less is achieved while maintaining good STO performance.

Abstract: In one embodiment, a magnetic head includes a main pole configured to write data to a magnetic medium, a trailing shield positioned on a trailing side of the main pole, and a STO between the main pole and the trailing shield, wherein the STO includes a laminated structure having a FGL, a spun polarization layer (SPL), and a non-magnetic spacer positioned between the FGL and the SPL, wherein the FGL includes a laminated structure having one or more layers of a CoFe alloy and a Heusler alloy alternately laminated in this order from an end of the FGL closest to the non-magnetic spacer. In another embodiment, a method is presented for forming such a magnetic head utilizing a FGL that includes a laminated structure baying layers of a CoFe alloy and a Heusler alloy alternately laminated in this order from an end of the FGL closest to the non-magnetic spacer.

Abstract: A data storage device may be constructed as a data reader in various embodiments with a magnetic stack that has a barrier layer disposed between first and second magnetically free layers. The magnetic stack may have a horizontally symmetrical configuration that provides negative exchange coupling between the magnetically free layers.

Abstract: A magnetic head includes a first electrode layer, a metal magnetic layer, an organic molecular having a pi conjugated structure, an inorganic layer, and a second electrode layer.

Abstract: An example magnetoresistive element includes a nonmagnetic conductive layer; a first magnetic layer connected to the nonmagnetic conductive layer; a second magnetic layer connected to the nonmagnetic conductive layer so as to be distant from the first magnetic layer; a third magnetic layer connected to the nonmagnetic conductive layer so as be distant from the first magnetic layer; and first to third magnetic electrodes connected to the first to third magnetic layers respectively. A voltage is applied between the third magnetic electrode and the first magnetic electrode through the third magnetic layer, the nonmagnetic conductive layer, and the first magnetic layer, and a current is caused to flow between the third electrode and the second magnetic electrode through the third magnetic layer, the nonmagnetic conductive layer, and the second magnetic layer. The nonmagnetic conductive layer decreases in volume toward the one end face.

Abstract: A tunneling magnetoresistive (TMR) read head has a read gap with a reduced thickness. A multilayer seed layer includes a first ferromagnetic seed layer on the lower shield, a ferromagnetic NiFe alloy on the first seed layer, and a third seed layer of Ru or Pt on the NiFe seed layer. The first and NiFe seed layers are magnetically part of the lower shield, thereby effectively reducing the read gap thickness. A free layer/capping layer structure includes a multilayer ferromagnetic free layer and a Hf capping layer on the free layer. The free layer includes a B-containing upper layer in contact with the Hf capping layer prior to annealing. When the sensor is annealed Hf diffuses into the B-containing upper layer, forming an interface layer. The Hf-containing interface layer possesses negative magnetostriction, so the free layer is not required to contain NiFe.

Abstract: A magnetic tunnel junction device with perpendicular magnetization including a reference layer, a tunneling dielectric layer, a free layer and a capping layer is provided. The tunneling dielectric layer covers on the reference layer. The free layer covers on the tunneling dielectric layer. The capping layer is consisted of magnesium, aluminum and oxygen, and disposed on the free layer.

Abstract: A method of forming and a magnetoresistive random access memory (MRAM) device. In an embodiment, the MRAM device includes a magnetic tunnel junction (MTJ) disposed over a bottom electrode, the magnetic tunnel junction having a first sidewall, a top electrode disposed over the magnetic tunnel junction, and a dielectric spacer supported by the magnetic tunnel junction and extending along sidewalls of the top electrode, the dielectric spacer having a second sidewall substantially co-planar with the first sidewall of the magnetic tunnel junction.

Abstract: A method provides a magnetic transducer having an air-bearing surface (ABS). The method includes providing a read sensor stack for a read sensor of the read device and defining a read sensor from the read sensor stack in a stripe height direction. The stripe height direction is perpendicular to the ABS. At least one magnetic bias structure is also provided. An insulating layer is deposited on the read sensor. The insulating layer has a full film removal rate of not more than fifty Angstroms per minute. The insulating layer also has a top surface. The insulating layer is planarized. At least a portion of the top surface of the insulating layer being exposed at the start of the planarizing step. At least the read sensor is defined in a track width direction.

Abstract: An apparatus for two dimensional reading may be constructed, in accordance with some embodiments, with a number of magnetic stacks respectively configured to engage adjacent data tracks of a data storage media. Each magnetic stack can be disposed between top and bottom shields while each shield is segmented into a number of contacts different than the number of magnetic stacks.

Abstract: Memory circuit comprising an addressable magnetic tunnel junction (MTJ) stack, forming a magnetic storage element in the circuit. The MTJ stack comprises a tunnel oxide layer between a free layer and a fixed layer. A stress inducing layer is disposed adjacent to the free layer to provide tensile or compressive stress to the free layer, in order to manipulate a magnetic field that is required to write a bit into the MTJ stack. Method of using the memory circuit is also proposed.

Abstract: An MRAM device, and a process for manufacturing the device, provides improved breakdown distributions, a reduced number of bits with a low breakdown voltage, and an increased MR, thereby improving reliability, manufacturability, and error-free operation. A tunnel barrier is formed between a free layer and a fixed layer in three repeating steps of forming a metal material, interceded by oxidizing each of the metal materials. The oxidization of the third metal material is greater than the dose of the first metal, but less than the dose of the second metal. The fixed layer may include a discontinuous layer of a metal, for example, Ta, in the fixed layer between two layers of a ferromagnetic material.

Abstract: In one embodiment, a device includes a reference layer, a free layer positioned above the reference layer, and a spacer layer positioned between the reference layer and the free layer, the spacer layer providing a gap between the reference layer and the free layer, wherein the reference layer extends beyond a rear extent of the free layer in an element height direction perpendicular to a media-facing surface of the device, and wherein a rear portion of the spacer layer that extends beyond the rear extent of the free layer has an increased resistivity in comparison with a resistivity of a rest of the spacer layer. In other embodiments, a method for forming the device is presented, along with other device structures having an extended pinned layer (EPL).

Abstract: A later spin valve multi-reader includes at least two spin detectors, a spin injector and a spin diffusion medium. The spin diffusion medium bridges the spin detectors and the spin injector. Each of the spin detectors detects a unique spin accumulation signal.