Abstract: In a ceramic electronic component, a first internal electrode includes a first opposed section and a first extraction section. The first opposed section is opposed to a second internal electrode with a ceramic layer interposed therebetween. The first extraction section is located closer to a first end surface than the first opposed section. The first extraction section is connected to a first external electrode. The number of cross-linked sections per unit area in the first extraction section is less than the number of cross-linked sections per unit area in the first opposed section.

Abstract: A device is provided for protecting an electronic printed circuit board, which includes at least two layers. The device includes on a layer, at least one conductive part uniformly spread on an insulator layer, the entirety comprising the conductive part and the insulator layer forming a capacitive support presenting a uniform electrical field. The capacitive support is placed roughly on the whole surface of one of the layers of the multi-layered electronic printed circuit board. The capacitive support is configured to deliver a reference capacitance. A capacitive measurement microprocessor detects a variation in capacitance. A transmitter is configured for transmitting a piece of information representing the variation in capacitance when an absolute value of a difference between the measured capacitance and the reference capacitance exceeds a predetermined threshold.

Abstract: Systems and methods are disclosed herein to a power factor adjustor comprising: a power factor measurement unit configured to measure the power factor on an input line to a load and generate a power factor correction signal based on the measured power factor; and a power factor adjustment unit connected to the power factor measurement unit comprising: a fixed capacitor connected in series to a first switching device; and an adjustable element having a variable capacitance connected in parallel to the fixed capacitor and in series to a second switching device, wherein the overall capacitance of the power factor adjustment unit is adjusted by adjusting the capacitance of the adjustable element or by toggling the first and second switching devices in response to the power factor correction signal.

Abstract: A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage avoiding distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a linear dependence of the capacitance value with respect to the voltage of its control terminal.

Abstract: An electronic device includes a capacitive component with variable capacitance coupled to a control stage that controls the capacitance, based on a reference signal, with a reference frequency, and an excitation signal, that is a multiple of the reference frequency. The capacitive component includes a variable capacitive network having a plurality of switched capacitors, each being switchable between a first configuration, where it is connected between connection terminals of the capacitive component, and a second configuration, where it is connected at most to one of the connection terminals. The control stage includes a logic module, coupled to the variable capacitive network for switching periodically each capacitor between the first configuration and the second configuration. A sign circuit, coupled to the capacitive component supplies a control signal having edges concordant with the excitation signal in one half-period of each cycle of the reference signal and discordant edges in the other half-period.

Abstract: A semiconductor device that prevents the leaning of storage node when forming a capacitor having high capacitance includes a plurality of cylinder-shaped storage nodes formed over a semiconductor substrate; and support patterns formed to fix the storage nodes in the form of an ‘L’ or a ‘+’ when viewed from the top. This semiconductor device having support patterns in the form of an ‘L’ or a ‘+’ reduces stress on the storage nodes when subsequently forming a dielectric layer and plate nodes that prevents the capacitors from leaking.

Abstract: A metalized film capacitor includes a first dielectric film, a first metal thin-film electrode provided on a surface of the first dielectric film, a second dielectric film provided on the first metal thin-film electrode, and a second metal thin-film electrode provided on the second dielectric film, such that the second metal thin-film electrode faces the first metal thin-film electrode across the second dielectric film. The surface of the first dielectric film has a surface energy ranging from 25 mN/m to 40 mN/m. The metalized film capacitor exhibits high heat resistance and a preferable self-healing effect.

Abstract: In a structure or device having a pair of electrical conductors separated by an insulator across which a voltage is placed, resistive layers are formed around the conductors to force the electric potential within the insulator to distribute more uniformly so as to decrease or eliminate electric field enhancement at the conductor edges. This is done by utilizing the properties of resistive layers to allow the voltage on the electrode to diffuse outwards, reducing the field stress at the conductor edge. Preferably, the resistive layer has a tapered resistivity, with a lower resistivity adjacent to the conductor and a higher resistivity away from the conductor. Generally, a resistive path across the insulator is provided, preferably by providing a resistive region in the bulk of the insulator, with the resistive layer extending over the resistive region.

Abstract: A capacitor (1) for application in high pressure environments has at least two electrodes (2.1, 2.2) and at least one electrically insulating film (5) forming a dielectric between the electrodes (2.1, 2.2), each electrode (2.1, 2.2) having at least one metallic foil (3.1, 3.2) or at least one metallic layer on the electrically insulating film (5), wherein the capacitor (1) is unencapsulated and designed to allow a surrounding liquid to fill cavities of the capacitor (1). Furthermore, an electric device has at least one such capacitor (1) in a device housing, whereby the device housing is filled with an electrically insulating liquid.

Abstract: An electronic component (2) for application in high pressure environments has a casing (4) entirely filled with an electrically insulating first fluid (F1), whereby the casing (4) exhibits or connects to a volume compensation unit for compensating a volume change of the first fluid (F1). An electric device (1) has at least one such electronic component (2) in a device housing (10), whereby the device housing (10) is filled with a second fluid (F2).

Abstract: A variable capacitive element includes a first fixed electrode and a second fixed electrode that are insulated from each other, a movable electrode arranged to face the first fixed electrode and the second fixed electrode, a dielectric layer provided between the movable electrode and the first fixed electrode as well as the second fixed electrode, a first wiring part for applying a first driving voltage to the first fixed electrode with reference to a potential of the movable electrode, and a second wiring part for applying a second driving voltage to the second fixed electrode with reference to the potential of the movable electrode, the second driving voltage having a polarity different from a polarity of the first driving voltage.

Abstract: A varactor element, includes: a dielectric layer; a pair of signal electrodes, each disposed on one face of the dielectric layer and facing each other; and a pair of control electrodes, each disposed on another face of the dielectric layer and facing each other parallel to a direction intersecting a direction of the pair of signal electrodes facing each other.

Abstract: Dielectric elastomer or electroactive polymer film transducers configured to minimize high electrical field gradients that can lead to partial discharge and corona.

Abstract: In a method for forming an in-molded capacitive sensing device a plastic film is provided, the plastic film comprising a first side and a second side. A capacitive sensor pattern is disposed on at least a portion of the second side, the capacitive sensor pattern including a region for facilitating electrical contact. A resin layer is printed over a portion of the capacitive sensor pattern such that access to the region for facilitating electrical contact is maintained. A plastic layer is injection molded onto a portion of the resin layer such that the capacitive sensor pattern becomes in-molded between the plastic film and the plastic layer while access to the region for facilitating electrical contact is maintained.

Abstract: In a case-molded capacitor, an electrode of a capacitor element is connected with a busbar having an electrode terminal for external connection. The capacitor element and the busbar are placed in a metal case having an upper surface opening and are resin molded. A thermally-conductive insulator layer is provided between the capacitor element and a bottom surface of the metal case, hence providing the case-molded capacitor with a heat resistance.

Abstract: A variable capacitance element provided with a substrate, a signal line provided on the substrate, a fixed electrode provided on the substrate, and a movable electrode. The movable electrode includes a movable portion that spans the signal line and extends to above the fixed electrode, and is movable with respect to the fixed electrode, and a fixed portion that is fixed to the fixed electrode across a dielectric layer.

Abstract: A tuneable capacitor arrangement for RF use has two series coupled MEMS variable capacitors (C1,C2;C4,C5,C6,C7), varied according to a control signal. The series coupling enables the capacitor to withstand a higher voltage since this is shared by the individual capacitors in a series coupled arrangement. An increase in size of electrodes for each capacitor is compensated by a reduction in size of the springs supporting movable electrodes. These springs can have a larger stiffness value since the capacitance is larger. This means shorter springs, which can also result in a reduction in problems of stiction, resistance, and slow switching. The capacitances have a fixed and a movable electrode, with the RF signal coupled to the fixed electrode to avoid the springs needing to carry an RF signal. This can reduce the problems of inductance and resistance in the springs.

Abstract: To permanently apply lead terminals to corresponding electrodes of electronic or electro-optic components, the following steps are carried out: a. providing a frame including at least one tensioned wire, b. providing a holding jig including at least one seat in which a respective one of the components can be removably and temporarily retained, c. applying the components to the seats with the respective electrodes aligned along a respective longitudinal direction; in this way a row of aligned components is obtained, each component having a corresponding electrode aligned to the subsequent one in the row, d. applying the holding jig to the frame and orienting the same so that the longitudinal direction corresponds to the direction of the tensioned wire, the tensioned wire being thereby brought substantially in contact with (all) the electrode(s) aligned to each other on a corresponding row of components, e.

Abstract: A multi-layered circuit board is provided having a buried capacitive layer and a device-specific embedded, localized, non-discrete, and distributive capacitive element. A printed circuit board is provided including (1) a first dielectric layer, (2) a first conductive layer coupled to a first surface of the first dielectric layer, (3) a second conductive layer coupled to a second surface of the first dielectric layer, and (4) a localized distributive non-discrete capacitive element adjacent the first conductive layer, wherein the capacitive element occupies a region that approximately coincides with a location over which a device to be coupled to the capacitive element is to be mounted. The embedded, localized, non-discrete, and distributive capacitive element may provide device-specific capacitance to suppress voltage/current noise for a particular device.

Abstract: A tunable capacitor using an electrowetting phenomenon includes a first electrode; a second electrode which is spaced apart from the first electrode and faces the first electrode; a fluidic channel which is disposed between the first electrode and the second electrode; a first insulating layer which is disposed between the first electrode and the fluidic channel; and a conductive fluid which is disposed in the fluidic channel and moves along the fluidic channel when a direct current (DC) potential difference occurs between the first and second electrodes. Accordingly, it is possible to fabricate the tunable capacitor with the simplified fabrication process, good reliability and durability, and no restriction on the tuning range.

Abstract: A capacitor includes a multi layer structure on a ceramic or crystalline substrate. The multilayer structure includes a lower electrode, an upper electrode, and a dielectric that is tunable by a voltage applied to the electrodes. The multilayer structure is configured such that resonant oscillation modes of bulk acoustic waves can be propagated in the multilayer structure and such that the resonant frequencies of the oscillation modes are outside a first band range of between 810 and 1000 MHz, second band range of between 1700 and 2205 MHz and third band range of between 2400 and 2483.5 MHz.

Abstract: A variable capacitor is provided which is appropriate for suppressing fluctuation in driving voltage characteristic and for achieving a larger variation ratio of static capacitance. The variable capacitor includes a fixed electrode and a movable electrode. The fixed electrode includes a first opposing face, while the movable electrode includes a second opposing face that faces the first opposing face. The movable electrode further includes a curved portion that protrudes toward the fixed electrode. The variable capacitor also includes a dielectric pattern provided on the first opposing face.

Abstract: A capacitor (1) for application in high pressure environments has at least two electrodes (2.1, 2.2) and at least one electrically insulating film (5) forming a dielectric between the electrodes (2.1, 2.2), each electrode (2.1, 2.2) having at least one metallic foil (3.1, 3.2) or at least one metallic layer on the electrically insulating film (5), wherein the capacitor (1) is unencapsulated and designed to allow a surrounding liquid to fill cavities of the capacitor (1). Furthermore, an electric device has at least one such capacitor (1) in a device housing, whereby the device housing is filled with an electrically insulating liquid.

Abstract: A multilayer ceramic capacitor includes: an effective layer formed by alternately laminating inner electrodes and dielectric layers; and a protection layer formed by stacking dielectric layers on upper and lower surfaces of the effective layer, wherein the thickness of the protection layer is 10.0 to 30.0 times the sum of an average thickness of the inner electrodes and an average thickness of the dielectric layers within the effective layer.

Abstract: According to an embodiment of the present invention, an electrostatic breakdown protection method protects a semiconductor device from a surge current impressed between a first terminal and a second terminal, the semiconductor device including: a diode impressing a forward-bias current from the first terminal to the second terminal; and a bipolar transistor impressing a current in a direction from the second terminal to the first terminal under an ON state, a continuity between a collector terminal and an emitter terminal of the bipolar transistor being attained before a potential difference between the first terminal and the second terminal reaches such a level that the diode is broken down.

Abstract: A multilayer chip capacitor includes a capacitor body, a plurality of internal electrodes, and a plurality of external electrodes. The capacitor body is formed of a ceramic sintered product and has first and second side surfaces facing each other. The plurality of internal electrodes each of which has two leads extending to the first and second side surfaces of the capacitor body, respectively, are arranged such that the internal electrodes with one polarity and the internal electrodes with the other polarity are alternately stacked inside the capacitor body. The plurality of external electrodes are formed on the first and second side surfaces of the capacitor body along a stacked direction of the internal electrodes such that the external electrodes with one polarity and the external electrodes with the other polarity are alternately arranged on each of the first and second side surfaces, and are connected to the leads.

Abstract: The present invention provides compliant/stretchable electroactive materials and devices made from those materials which exhibit fault-tolerant properties, i.e., self-healing/clearing properties. The present invention also provides systems, which incorporate the subject materials and/or devices, as well as methods of fabricating the subject materials and devices.

Abstract: A variable capacitor including a first electrode part, which is provided at a fixed part that includes a substrate, and a movable part, which has a second electrode part forming the capacity of said variable capacitor between itself and the first electrode part, and the movable part is displaced in response to a first drive signal to selectively go into an opposing status, in which the second electrode part opposes the first electrode part, and a non-opposing status, in which the second electrode part essentially does not oppose the first electrode part. This variable capacitor is able to obtain at least a two-value capacity in which the mutual ratio is large without specially requiring another capacitor or a switch, and it is able to obtain the desired capacity variation range by combining a plurality of capacitors.

Abstract: Disclosed is an integrated tunable inductor having mutual micromachined inductances fabricated in close proximity to a tunable inductor that is switched in and out by micromechanical ohmic switches to change the inductance of the integrated tunable inductor. To achieve a large tuning range and high quality factor, silver is preferably used as the structural material to co-fabricate the inductors and micromachined switches, and silicon is selectively removed from the backside of the substrate. Using this method, exemplary tuning of 47% at 6 GHz is achievable for a 1.1 nH silver inductor fabricated on a low-loss polymer membrane. The effect of the quality factor on the tuning characteristic of the integrated inductor is evaluated by comparing the measured result of substantially identical inductors fabricated on various substrates. To maintain the quality factor of the silver inductor, the device may be encapsulated using a low-cost wafer-level polymer packaging technique.

Abstract: This invention relates to a capacitor, especially an energy discharge capacitor, which can also be used to improve the quality factor of antenna circuit and solve eddy current problem induced on a conductor.

Abstract: At least one of the conductive members has a hollow storage portion that is formed at the conductive member and a communication hole through which the storage portion and the vacuum chamber communicate with each other, a getter is set inside the storage portion, and an adsorbed object such as metal particles and gas in a vacuum chamber is adsorbed by the getter. By prevent application of the electric field to the getter, even though the electric field appears in a vacuum casing, a temperature of the getter does not reach a re-release temperature, and also electron stimulus desorption phenomenon does not occur, then it is possible to prevent the metal particles and the gas etc. which have been adsorbed once by the getter from being released.

Abstract: A method is for fabricating an integrated circuit formed from a substrate and including several metallic interconnection levels in which, in a same plane parallel to the main plane of the substrate, is a plurality of thick horizontal metallic interconnection lines, as well as one or several MIM capacitors fitted with metallic electrodes that are orthogonal to the main plane of the substrate.

Abstract: A capacitor and method of manufacturing the same include an insulating interlayer, a lower electrode, a protection structure, a dielectric layer and an upper electrode. The insulating interlayer may include a conductive pattern formed on a substrate. The lower electrode may be electrically connected to the conductive pattern. The protection structure may be formed on an outer sidewall of the cylindrical lower electrode and on the insulating interlayer.

Abstract: A capacitor is disclosed. The capacitor in accordance with an embodiment of the present invention includes a first electrode, a dielectric substance, which is formed on the first electrode, a second electrode, which is formed on the dielectric substance, and a magnetic layer, which is interposed between the dielectric substance and at least one of the first electrode and the second electrode. In accordance with the present embodiment, dielectric loss can be reduced while minimizing the reduction of capacitance of the capacitor.

Abstract: An electrical multilayer component includes a basic body having at least one stack of dielectric layers and electrode layers arranged alternately one above another. The component also includes an electrically non-connected shielding structure.

Abstract: A power capacitor is described herein. The power capacitor includes a housing and at least one capacitor winding. The power capacitor also includes at least one mechanical spring clement between the housing and the at least one capacitor winding.

Abstract: Dielectric elastomer or electroactive polymer film transducers configured to minimize high electrical field gradients that can lead to partial discharge and corona.

Abstract: The devices presented herein are capacitive sensors with single crystal silicon on all key stress points. Isolating trenches are formed by trench and refill forming dielectrically isolated conductive silicon electrodes for drive, sense and guards. For pressure sensing devices according to the invention, the pressure port is opposed to the electrical wire bond pads for ease of packaging. Dual-axis accelerometers measuring in plane acceleration and out of plane acceleration are also described. A third axis in plane is easy to achieve by duplicating and rotating the accelerometer 90 degrees about its out of plane axis Creating resonant structures, angular rate sensors, bolometers, and many other structures are possible with this process technology. Key advantages are hermeticity, vertical vias, vertical and horizontal gap capability, single crystal materials, wafer level packaging, small size, high performance and low cost.

Abstract: When a package substrate with a built-in capacitor includes a first thin-film small electrode 41aa and a second thin-film small electrode 42aa that are electrically short-circuited to each other via a pinhole P in a high-dielectric layer 43, a power supply post 61a and a via hole 61b are not formed in the first thin-film small electrode 41aa, and a ground post 62a and a via hole 62b are not formed in the second thin-film small electrode 42aa, either. As a result, the short-circuited small electrodes 41aa and 42aa are electrically connected to neither a power supply line nor a ground line, and become a potential independent from a power supply potential and a ground potential. Therefore, in the thin-film capacitor 40, only the portion where the short-circuited small electrodes 41aa and 42aa sandwich the high dielectric layer 43 loses the capacitor function, and portions where other thin-film small electrodes 41a and 42a sandwich the high dielectric layer 43 maintain the capacitor function.

Abstract: A method for manufacturing a semiconductor physical quantity sensor including a support substrate, a movable electrode, a fixed electrode is provided. The method includes the steps of: preparing a multi-layered substrate; forming a compression stress layer on a part of a surface of the semiconductor layer; forming a trench in the semiconductor layer; and releasing the movable electrode from the substrate by removing the insulation film. In the step of releasing, the part of the semiconductor layer, on which the compression stress layer is disposed, is cambered by the compression stress toward a direction apart from the substrate.

Abstract: A capacitor having a large current carrying capacity includes a hollow core formed by a non-conducting tubular section, and a capacitor winding wrapped around the tubular section. A sensor is disposed within the hollow core. The sensor is configured to sense a predetermined temperature level within the hollow core and provide an alert external to the capacitor winding.

Abstract: A capacitor having a large current carrying capacity includes a hollow core formed by a non-conducting tubular section, and a capacitor winding wrapped around the tubular section. A thermal cutoff device is disposed within the hollow core. The thermal cutoff device is configured to sense a predetermined temperature level within the hollow core and disable the current carrying capacity of the capacitor. The thermal cutoff device is disposed at a geometric center of the capacitor winding, which is also the hot spot of the capacitor winding. The thermal cutoff device includes first and second conductors electrically connected to each other with a predetermined solder alloy. The first conductor includes a cross-sectional portion that is attached to the second conductor. The cross-sectional portion is subjected to a springing force in a lateral direction away from the second conductor.

Abstract: A lower movable electrode 35, having line sections 35a, 35a on both ends and a capacitor section 35b in the center, and an upper movable electrode 37, having line sections 37a, 37a on both ends and a capacitor section 37b in the center, are placed so that the capacitor sections 35b, 37b face each other, and drive electrodes of lower-movable-electrode actuators 27a, 27b, 27c, 27d driving the lower movable electrode 35 and upper-movable-electrode actuators 29a, 29b, 29c, 29d driving the upper movable electrode 37 are electrically separated from the lower movable electrode 35 and upper movable electrode 37. These actuators 27a to 27d and/or 29a to 29d move the lower movable electrode 35 and/or upper movable electrode 37 to adjust the distance between both capacitor sections 35b, 37b, and control the electrostatic capacity.

Abstract: A micro-electromechanical variable capacitor with first and second capacitor plates spaced apart to define a gap therebetween. The first plate has two control electrodes and an active electrode. The second plate is movable relative to first plate when a voltage is applied to produce a potential difference across the control electrode and the second capacitor plate. This has the effect of varying the capacitance of the capacitor. The facing surface of at least one of the plates is formed in such a way that it has a roughened surface. The degree of roughness is sufficient to prevent the facing surfaces adhering together through stiction.

Abstract: In one embodiment, a container with an overpressure safety device comprises a wall having a depression in at least a portion of the wall that expands when the pressure inside the container exceeds a predetermined level. The container further comprises a clamp bridging over the depression and restraining the angular expansion of the depression, while at the same time enabling the depression to expand radially. As a consequence, the outer dimensions of the container remain essentially constant when the pressure inside the container exceeds the predetermined level. The container may be tubular in shape and the depression may be shaped like a groove extending parallel to the longitudinal axis of the container, while the clamp may be shaped like a bar affixed to the outer wall of the container in two or more points spaced angularly on opposite sides of the depression.

Abstract: A process for producing an activated carbon for an electrode of an electric double-layer capacitor, includes a step of subjecting a carbonized material to an alkali activating treatment, wherein the carbonized material has an average true specific gravity of 1.450 to 1.650 and a variation of the true specific gravities of 0.025 or less.

Abstract: A charge storage device having a capacitance that is variable by alteration of the relative permittivity of the dielectric positioned between conductive electrodes within the device. The device consists of two conductive plates sandwiching a conductive grid, typically embedded within a dielectric material. Charging the grid with a negative or positive potential changes the value of the dielectric constant (the relative permittivity) and thereby changes the capacitance of the device.

Abstract: An electrical component with a substrate having a planar surface. A capacitor is provided having a plurality of first plates and second plates wherein the first plates and second plates are non-contacting and in common planes. A plurality of third plates are parallel to the first plates and the second plates and interleaved between the planes. A first external termination is in electrical contact with the plurality of first plates and a second external termination is in electrical contact with the plurality of second plates. The capacitor is mounted on the substrate with the first plates, the second plates and the third plates perpendicular to the planar surface.

Abstract: A device for varying the capacitance of an electronic circuit is disclosed. The device comprises a flexible membrane located above the electronic circuit, a metal layer connected to the flexible membrane, and bias circuitry located above the membrane. Variation of the capacitance of the electronic circuit is obtained by pulling the membrane upwards by means of the bias circuitry. The disclosed device provides a sizeable capacitance variation and high Q factor, resulting in overall low filter insertion loss. A nearly constant group delay over a wide operating bandwidth is also obtained.

Abstract: A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.