Abstract: According to an embodiment of the present invention, an electronic device may comprise: a first printed circuit board which includes a first surface facing a first direction and a second surface facing a second direction opposite to the first direction; a second printed circuit board which includes a third surface facing the first direction and a fourth surface facing the second direction and includes at least one first antenna; a first wireless communication circuit which is electrically connected to at least one connection terminal formed on the first printed circuit board and transmits and receives a signal of a first frequency band through the at least one first antenna; and a conductive bonding member which is disposed between the first surface and the fourth surface and electrically connects the at least one first antenna and the first wireless communication circuit. Various other embodiments may be included.

Abstract: A semiconductor package comprises an interposer and a photonics die. The photonics die has a front side with an on-chip fiber connector and solder bumps, the photonics die over the interposer with the on-chip fiber connector and the solder bumps facing away from the interposer. A patch substrate is mounted on the interposer adjacent to the photonics die. A logic die is mounted on the patch substrate with an overhang past an edge of the patch substrate and the overhang is attached to the solder bumps of the photonics die. An integrated heat spreader (IHS) is over the logic die such that the photonics die does not directly contact the IHS.

Abstract: A method for forming a silicon photonics interposer having through-silicon vias (TSVs). The method includes forming vias in a front side of a silicon substrate and defining primary structures for forming optical devices in the front side. Additionally, the method includes bonding a first handle wafer to the front side and thinning down the silicon substrate from the back side and forming bumps at the back side to couple with a conductive material in the vias. Furthermore, the method includes bonding a second handle wafer to the back side and debonding the first handle wafer from the front side to form secondary structures based on the primary structures. Moreover, the method includes forming pads at the front side to couple with the bumps at the back side before completing final structures based on the secondary structures and debonding the second handle wafer from the back side.

Abstract: A semiconductor structure and a method for same are provided. The semiconductor structure includes: a first base having a first face, a second base having a second face, and a welding structure. The first base has an electrical connection column protruding from the first face. A first groove is provided at top of the electrical connection column. A conductive column is provided in the second base, and the second base also has a second groove. A top face and at least portion of a side face of the conductive column are exposed by the second groove. The electrical connection column is partially located in the second groove, and the conductive column is partially located in the first groove. At least portion of the welding structure is filled in the second groove, and at least further portion of the welding structure is filled between the conductive column and first groove.

Abstract: An electronic device includes: an electronic element having an element obverse surface and an element reverse surface spaced apart from each other in a first direction, the element obverse surface being provided with an obverse-surface electrode; a resin member having a resin reverse surface facing in a same direction as the element reverse surface, the resin member covering the electronic element; and an electrically conductive member supporting the electronic element and electrically connected to the electronic element. The electrically conductive member has a first exposed region, a second exposed region and a third exposed region each of which is exposed from the resin reverse surface. The resin member has a first resin side surface and a second resin side surface connected to each other and standing up from the resin reverse surface. As viewed in the first direction, the first exposed region is located at a corner portion where the first resin side surface and the second resin side surface are connected.

Abstract: The disclosure provides an electromagnetic wave adjustment apparatus includes a control circuit, a transistor circuit die and an electronic assembly. The transistor circuit die receives a control signal from the control circuit and drives the electronic assembly.

Abstract: A semiconductor device package includes a multilayer substrate including atop layer, a bottom layer and an intermediate layer between the top layer and the bottom layer. The package also includes one or more semiconductor dies embedded in the intermediate layer and conductive connector means to provide a conductive connection from the one or more dies. The conductive connector means extend through the top layer to provide connection means for one or more devices mounted on or adjacent the top layer.

Abstract: Embodiments disclosed herein include forksheet transistor devices having a dielectric or a conductive spine. For example, an integrated circuit structure includes a dielectric spine. A first transistor device includes a first vertical stack of semiconductor channels spaced apart from a first edge of the dielectric spine. A second transistor device includes a second vertical stack of semiconductor channels spaced apart from a second edge of the dielectric spine. An N-type gate structure is on the first vertical stack of semiconductor channels, a portion of the N-type gate structure laterally between and in contact with the first edge of the dielectric spine and the first vertical stack of semiconductor channels. A P-type gate structure is on the second vertical stack of semiconductor channels, a portion of the P-type gate structure laterally between and in contact with the second edge of the dielectric spine and the second vertical stack of semiconductor channels.

Abstract: A package is disclosed. In one example, the package comprises a carrier comprising a thermally conductive and electrically insulating layer, a laminate comprising a plurality of connected laminate layers, an electronic component mounted between the carrier and the laminate. An encapsulant is at least partially arranged between the carrier and the laminate and encapsulating at least part of the electronic component.

Abstract: An apparatus includes an integrated circuit package and a heatsink. The integrated circuit package includes a substrate, an integrated circuit, a first plurality of signal conductors, and a second plurality of signal conductors. The substrate includes a first surface and a second surface opposite the first surface. The integrated circuit is coupled to the first surface of the substrate. The first plurality of signal conductors are arranged along a periphery of the first surface of the substrate. The second plurality of signal conductors are arranged along a periphery of the second surface of the substrate. The heatsink includes a first portion positioned along the first surface of the substrate and a second portion positioned along the second surface of the substrate.

Abstract: The present disclosure relates to a printed circuit board assembly, which includes: a first printed circuit board, printed with a first transmission trace; a second printed circuit board, printed with a second transmission trace; a substrate, in which, the provides a through aperture for a radio frequency connector; and a radio frequency connector, which includes an inner contact portion, an housing and an insulating part provided between the inner contact portion and housing, where the radio frequency connector is configured to be received in and pass through the through aperture, such that a first end of the inner contact portion of the radio frequency connector is electrically connected to the first transmission trace and a second end thereof is electrically connected to the second transmission trace, so that a first end of the housing of the radio frequency connector is electrically connected to a ground layer of the first printed circuit board and a second end thereof is electrically connected to the gro

Abstract: In described examples, a first metal layer is configured along a periphery of a cavity to be formed between a first substrate and a second substrate. A second metal layer is adjacent the first metal layer. The second metal layer includes a cantilever. The cantilever is configured to deform by bonding the first substrate to the second substrate. The deformed cantilevered is configured to impede contaminants against contacting an element within the cavity.

Abstract: Provided are a package structure and a method of forming the same. The method includes: laterally encapsulating a device die and an interconnect die by a first encapsulant; forming a redistribution layer (RDL) structure on the device die, the interconnect die, and the first encapsulant; bonding a package substrate onto the RDL structure, so that the RDL structure is sandwiched between the package substrate and the device die, the interconnect die, and the first encapsulant; laterally encapsulating the package substrate by a second encapsulant; and bonding a memory die onto the interconnect die, wherein the memory die is electrically connected to the device die through the interconnect die and the RDL structure.

Abstract: A semiconductor package includes: a first package including a first semiconductor chip; a second package under the first package, the second package including a second semiconductor chip; and a first interposer package between the first package and the second package, the first interposer package including: a power management integrated circuit (PMIC) configured to supply power to the first package and the second package; a core member having a through-hole in which the PMIC is disposed; a first redistribution layer on the core member, and electrically connected to the first package; a second redistribution layer under the core member, and electrically connected to the second package; core vias penetrating the core member, and electrically connecting the first redistribution layer with the second redistribution layer; and a first signal path electrically connecting the first package with the second package.

Abstract: Disclosed is a semiconductor package including a first semiconductor chip on a substrate, a second semiconductor chip on the substrate and laterally spaced apart from the first semiconductor chip, a dummy chip on the first semiconductor chip, and a dielectric layer between the first semiconductor chip and the dummy chip. A top surface of the first semiconductor chip may be lower than a top surface of the second semiconductor chip. The dielectric layer may include an inorganic dielectric material.

Abstract: Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.

Abstract: An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.

Abstract: A display device includes a folding area, a first unfolding area located on a side of the folding area, and a second unfolding area located on a second side of the folding area. The display device further includes a display module which includes a display panel, and a first circuit board which is attached to the display panel and disposed under the display module, wherein the first circuit board includes a base film, a first driving integrated circuit (“IC”) disposed in the first unfolding area, and a second driving IC disposed in the second unfolding area where the first driving IC and the second driving IC do not overlap each other in a thickness direction during folding.

Abstract: Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a semiconductor device includes NAND memory cells and a first bonding layer including first bonding contacts. The semiconductor device also includes a second semiconductor structure including DRAM cells and a second bonding layer including second bonding contacts. The semiconductor device also includes a third semiconductor structure including a processor, SRAM cells, and a third bonding layer including third bonding contacts. The semiconductor device further includes a first bonding interface between the first and third bonding layers, and a second bonding interface between the second and third bonding layers. The first bonding contacts are in contact with a first set of the third bonding contacts at the first bonding interface. The second bonding contacts are in contact with a second set of the third bonding contacts at the second bonding interface. The first and second bonding interfaces are in a same plane.

Abstract: The semiconductor module includes: a heat dissipation board including first to third wiring patterns; a first metal plate on the first wiring pattern, a second metal plate on the second wiring pattern, a first semiconductor chip and a first intermediate board which are on the first metal plate, a second semiconductor chip and a second intermediate board which are on the second metal plate. A first metal film on the first intermediate board is electrically connected to the first semiconductor chip and the second metal plate, and a second metal film on the second intermediate board is electrically connected to the second semiconductor chip and the third wiring pattern.

Abstract: A wiring substrate includes: an insulating substrate being shaped in a quadrangle in a plan view, including a mounting portion where an electronic component is mounted on a side of a principal surface of the insulating substrate, and having a recess on a side surface thereof; an inner surface electrode which is located on an inner surface of the recess; a via conductor which is located on a corner side of the insulating substrate in a perspective plan view and has both ends located in a thickness direction of the insulating substrate; and a wiring conductor, on the side of the principal surface of the insulating substrate, connecting the mounting portion, the inner surface electrode, and the via conductor, wherein, in a perspective plan view, the wiring conductor has a wiring conductor absent region which surrounds a region located between the mounting portion and the via conductor.

Abstract: An embodiment relates to a lighting device.

Abstract: A method to manufacture an article comprises applying an ink to a substrate. The ink includes a liquid vehicle, a plurality of solid metal particles, a plurality of gallium-containing particles, and a thermally activated flux. The method further comprises curing the ink by heating the substrate to within an activation temperature range of the flux. The article manufactured by this method comprises a substrate, an electronically conductive film arranged on the substrate, and an adherent barrier layer covering both the substrate and the film. The film includes a plurality of solid metal particles with a gallium-based liquid metal bridging the plurality of solid metal particles.

Abstract: An electronic device includes a supporting board, an electrical board and electronic units. The supporting board includes a circuit layer. The electrical board has a board body, through holes through the board body, an electrical layer on the board body, and primary conductive elements respectively in the through holes. The board body has opposite first and second surfaces. The through holes communicate with the first surface and the second surface. The primary conductive elements electrically connect the electrical layer to the circuit layer. The electronic units are arranged on the first surface. Each electronic unit partially overlaps with one corresponding through hole in a projection direction of the electrical board. Each electronic unit has an electronic component and a secondary conductive element electrically connecting the electronic component to the electrical layer. The secondary conductive elements and the primary conductive elements are arranged in dislocation in the projection direction.

Abstract: There is provided a semiconductor device including: a lead frame including a first opening portion; a resin filled in the first opening portion; and a semiconductor element electrically connected to the lead frame, wherein a side wall surface of the lead frame in the first opening portion has a larger average surface roughness than an upper surface of the lead frame.

Abstract: Through-hole mounted semiconductor assemblies are described. A printed circuit board (“PCB”) has first and second PCB sides and has a through hole therein. The through hole defines a hole area. A semiconductor package may be disposed in the hole area such that the semiconductor package is at least partially exposed on one or more of the first and the second PCB sides. Package contacts on the semiconductor package may be electrically coupled to PCB contacts disposed on one or more of the PCB sides. In some embodiments, one or more support structures may be coupled to the PCB and may touch the semiconductor package. In some embodiments, cooling devices may be placed in thermal communication with the semiconductor package on both sides of the PCB.

Abstract: A display device includes a display medium layer, an active component array layer, a support layer, and a first adhesive layer. The display medium layer has a light-emitting surface. The active component array layer is disposed on a side of the display medium layer away from the light-emitting surface. The support layer is disposed on a side of the active component array layer away from the display medium layer. The first adhesive layer is connected between the active component array layer and the support layer, in which the active component array layer is directly connected to the first adhesive layer. The first adhesive layer has a Young's modulus greater than 10 GPa.

Abstract: A flash memory die includes (i) a first subset of planes including blocks of flash memory cells connected to a first number of word line layers and a plurality of bit lines having a first length, (ii) a second subset of planes including blocks of flash memory cells connected to a second number of word line layers less than the first number of word line layers and a plurality of bit lines having a second length shorter than the first length, (iii) first peripheral circuitry implemented underneath the first subset of planes and including first sense amplifier circuitry and first peripheral control circuitry connected to the first subset of planes, and second peripheral control circuitry connected to the second subset of planes, and (iv) second peripheral circuitry implemented underneath the second subset of planes and including second sense amplifier circuitry connected to the second subset of planes.

Abstract: A scalable switching regulator architecture may include an integrated inductor. The integrated inductor may include vias or pillars in a multi-layer substrate, with selected vias coupled at one end by a redistribution layer of the multi-layer substrate and, variously, coupled at another end by a metal layer of a silicon integrated circuit chip or by a further redistribution layer of the multi-layer substrate. The vias may be coupled to the silicon integrated circuit chip by micro-balls, with the vias and micro-balls arranged in arrays.

Abstract: A method for manufacturing a circuit board includes providing an insulating substrate, defining a through hole in the insulating substrate, forming a first conductive layer on two surfaces of the insulating substrate and on an inner wall of the through hole, forming a phase change material layer on a surface of each first conductive layer, forming a seed layer on a surface of the first conductive layer, forming a second conductive layer on a surface of the seed layer, and etching the seed layer, the first conductive layer, and the second conductive layer, so that a first conductive circuit layer and a second conductive circuit layer are respectively formed on two opposite surfaces of the insulating substrate, so that the phase change material layer is embedded in the first conductive circuit layer and in the second conductive circuit layer. The application also provides a circuit board.

Abstract: A semiconductor device includes a substrate, a resin case, and a wiring member having an exposed portion adjacent to a first fixing portion fixed in a wall surface of the resin case and exposed to outside, and a second fixing portion fixed in the wall surface of the resin case at a position different from the first fixing portion with respect to a portion extending from the first fixing portion into the resin case, in which the wiring member is bonded to a surface of the semiconductor element by solder in the resin case, and has a plate shape having a length, a thickness, and a width, in which the wiring member has the thickness being uniform and is flat in the resin case, and the width of the second fixing portion is narrower than the width of the exposed portion.

Abstract: Electronic packages and related methods are disclosed. An example electronic package apparatus includes a substrate and an electronic component. A protective material is positioned on a first surface, a second surface and all side surfaces of the electronic component to encase the electronic component. An enclosure is coupled to the substrate to cover the protective material and the electronic component.

Abstract: A display device includes a display panel, a data driver which transmits a data voltage to the display panel, a first flexible printed circuit board attached to the display panel and including an input side wiring electrically connected to the data driver, a first printed circuit board (PCB) electrically connected to the input side wiring to transmit a high-speed driving signal to the data driver, and a metal tape overlapping the input side wiring in a plan view and attached on the first flexible printed circuit board, where a part of the metal tape overlapping the input side wiring in the plan view defines an opening.

Abstract: The present disclosure provides an assembly structure for providing power for a chip and an electronic device using the same. The assembly structure includes: a circuit board, configured to provide a first electrical energy; a chip; a power converting module, configured to electrically connect the circuit board and the chip, convert the first electrical energy to a second electrical energy, and supply the second electrical energy to the chip, wherein the chip, the circuit board and the power converting module are stacked; and a connection component, configured to electrically connect the circuit board and the power converting module. The present disclosure assembles a power converting module with a circuit board and a chip in a stacking manner, which may shorten a current path between the power converting module and the chip, reduce current transmission losses, improve efficiency of a system, reduce space occupancy and save system resource.

Abstract: A packaged half-bridge circuit includes a carrier having a dielectric core and a first layer of metallization formed on an upper surface of the carrier, first and second semiconductor chips, each including a first terminal, a second terminal, and a control terminal, and a conductive connector mounted on the upper surface of the carrier and electrically connected to the first layer of metallization. The first semiconductor chip is configured as a high-side switch of the half-bridge circuit. The second semiconductor chip is configured as a low-side switch of the half-bridge circuit. At least one of the first and second semiconductor chips is embedded within the dielectric core of the carrier. The conductive connector is electrically connected to one of the first and second terminals from one or both of the first and second semiconductor chips.

Abstract: A semiconductor structure and a method for forming the semiconductor structure are disclosed. The method includes receiving a first integrated circuit component having a seal ring and a fuse structure, wherein the fuse structure is electrically connected to a ground through the seal ring; receiving a second integrated circuit component having an inductor; bonding the second integrated circuit component to the first integrated circuit component; electrically connecting the inductor to the fuse structure, wherein the inductor is electrically connected to the ground through the fuse structure; and blowing the fuse structure after a treatment.

Abstract: A method for manufacturing electronic chips includes depositing, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, a protective resin. The method includes forming, in the protective resin, at least one cavity per integrated circuit, in contact with an upper face of the integrated circuit. Metal connection pillars are formed by filling the cavities with metal. The integrated circuits are separated into individual chips by cutting the protective resin along cut lines extending between the metal connection pillars.

Abstract: A driving circuit board includes: a circuit connection board having a first surface and a second surface that is opposite to the first surface in a thickness direction of the circuit connection board; at least one driver integrated circuit (IC) disposed on the first surface of the circuit connection board; and a printed circuit board assembly (PCBA) bonded to the second surface of the circuit connection board.

Abstract: Embodiments of the invention include a method of preventing ferrite migration in a hearing aid including an antenna stack and a battery stack wherein the antenna stack sits on the battery stack, the method comprising the steps of: conformally coating the top and sides of the antenna stack using a conformal coating material; and separately coating all the surfaces of the battery stack using a separate material.

Abstract: A semiconductor device including: an insulating circuit substrate including a principal surface and a back surface; semiconductor chips each including an electrode on a principal surface and having a back surface on an opposite side to the principal surface, the back surface being fixed to the principal surface of the insulating circuit substrate; a wiring substrate facing the principal surface side of the insulating circuit substrate, separated from the semiconductor chip; a conductive post fixed to the electrode of the semiconductor chips and the wiring substrate; and a resin sealing body sealing the insulating circuit substrate, the semiconductor chips, the wiring substrate, and the conductive posts in such a manner as to expose the back surface of the insulating circuit substrate, wherein the semiconductor chips are respectively arranged on sides on which two short sides are located, and the conductive post has a recessed portion on its peripheral surface.

Abstract: The invention relates to an electronic module (40) comprising at least one printed circuit board of a first type (referred to as “printed circuit board A”), which is equipped in an overlapping manner with at least one printed circuit board of a second type (referred to as “printed circuit hoard B”), printed circuit board B being equipped with at least one electronic component with specific requirements (19), and the interconnected printed circuit boards A and B forming a stepped composite printed circuit board (100, 200, 300, 400, 500). The composite printed circuit board (100, 200, 300, 400, 500) is delimited at least in some regions by end regions (16) which are formed by sections of the at least one printed circuit board A, and the composite printed circuit board (100, 200, 300, 400, 500) is placed on a heat sink (20).

Abstract: Techniques that can assist with fabricating a package layer that includes a plurality of dual-damascene zero-misalignment-vias (dual-damascene ZMVs) and a trace between the dual-damascene ZMVs are described. The disclosed techniques allow for the dual-damascene ZMVs and their corresponding trace to be plated simultaneously in a single step or operation. As such, there is little or no misalignment between the dual-damascene ZMVs, the trace, and the metal pads connected to the ZMVs. In this way, one or more of the embodiments described herein can assist with reducing manufacturing costs, reducing development time of fabricating a package layer, and with increasing the I/O density in a semiconductor package.

Abstract: Disclosed is a semiconductor package including a first semiconductor chip on a substrate, a second semiconductor chip on the substrate and laterally spaced apart from the first semiconductor chip, a dummy chip on the first semiconductor chip, and a dielectric layer between the first semiconductor chip and the dummy chip. A top surface of the first semiconductor chip may be lower than a top surface of the second semiconductor chip. The dielectric layer may include an inorganic dielectric material.

Abstract: The present invention relates to a prepreg including a fiber base material layer containing a fiber base material, a first resin layer formed on one surface of the fiber base material layer, and a second resin layer formed on the other surface of the fiber base material layer, wherein the first resin layer is a layer obtained through layer formation of a resin composition (I) containing, as a main component of resin components, an epoxy resin (A), and the second resin layer is a layer obtained through layer formation of a resin composition (II) containing, as a main component of resin components, an amine compound (B) having at least two primary amino groups in one molecule thereof and a maleimide compound (C) having at least two N-substituted maleimide groups in one molecule thereof; a laminated sheet obtained by using the prepreg; a printed wiring board; a coreless board; a semiconductor package; and a method of producing a coreless board.

Abstract: Described herein are methods of manufacturing dual-sided packaged electronic modules to control the distribution of an under-fill material between one or more components and a packaging substrate. The disclosed technologies include using a dam on a packaging substrate that is configured to prevent or limit the flow of a capillary under-fill material. This can prevent or limit the capillary under-fill material from flowing onto or contacting other components or elements on the packaging substrate, such as solder balls of a ball-grid array. Accordingly, the disclosed technologies control under-fill for dual-sided ball grid array packages using a dam on a packaging substrate.

Abstract: A method for packaging a chip and a chip package structure are provided. The method is used to package the chip including an acoustic filter. The packaging substrate and the device wafer are welded together, wherein the edge of the device wafer is chamfered, the packaging substrate is provided with a groove, the chamfered portion of device wafer is aligned with the groove on the substrate, and then a mask is disposed. The surface of the mask facing the device wafer is an inclined surface, forming a wedge-shaped opening. A package resin material is printed, wherein the package resin material falls into the groove through the inclined surface of the mask, and a package resin film is formed between the groove and the chamfer. The mask is removed along the first surface toward the second surface. The package resin is cured in a position where the resin film is located.

Abstract: Novel integrated circuits (SOI ICs), and methods for making and mounting the ICs are disclosed. In one embodiment, an IC comprises a first circuit layer of the IC formed from an active layer of an SOI wafer. The first circuit layer is coupled to a first surface of buffer layer, and a second surface of the buffer layer is coupled to a selected substrate comprising an insulating material. The selected substrate may be selected, without limitation, from the following types: sapphire, quartz, silicon dioxide glass, piezoelectric materials, and ceramics. A second circuit layer of the IC are formed, coupled to a second surface of the selected substrate. In one embodiment of a mounted IC, the first circuit layer is coupled to contact pads on a package substrate via solder bumps or copper pillars. The second circuit layer is coupled to contact pads on the package substrate via wire bonds.

Abstract: Certain aspects of the present disclosure generally relate to a capacitive element. One example capacitive element generally includes a substrate, a plurality of trench capacitors, an electrically conductive via, a first electrically conductive contact, and a second electrically conductive contact. The trench capacitors intersect the substrate. The electrically conductive via intersects the substrate and is disposed adjacent to at least one of the trench capacitors. The first electrically conductive contact is disposed above the substrate, and the second electrically conductive contact is disposed below the substrate and electrically coupled to the plurality of trench capacitors through the electrically conductive via.

Abstract: According to the present invention, a semiconductor device includes an insulating substrate having an organic insulating layer and a circuit pattern provided on the organic insulating layer; and a semiconductor chip provided on an upper surface of the circuit pattern, wherein a thickness of the circuit pattern is not less than 1 mm and not more than 3 mm. According to the present invention, a method for manufacturing a semiconductor device includes forming a metal layer with a thickness not less than 1 mm and not more than 3 mm on an organic insulating layer; patterning the metal layer by machining processing to form a circuit pattern; and providing a semiconductor chip on an upper surface of the circuit pattern.

Abstract: An IGBT module includes a heat dissipation base plate. A first ceramic heat dissipation element is embedded in the heat dissipation base plate. A first wiring layer is provided on the surface of the heat dissipation base plate. The first side of an IGBT chip is mounted onto the first wiring layer. The second side of the IGBT chip is provided with a heat conductive metal plate. A first heat dissipation plate having a first through hole is provided on a side of the first wiring layer. The IGBT chip and the heat conductive metal plate are located in the first through hole. A second wiring layer is provided on a side of the first heat dissipation plate away from the IGBT chip. The second wiring layer is provided on a side of the heat conductive metal plate.