Abstract: An EPROM in which data can be easily erased comprises a P type semiconductor substrate; source.drain regions formed on a main surface of the P type semiconductor substrate, a floating gate for storing charges representing information formed on a region sandwiched by the source.drain regions with an insulating film interposed therebetween, a superconductive material which will be the switching device formed on the floating gate, and a control gate formed on the superconductive material. In the normal operation, the superconductive material is non-conductive, so that the charges representing information are held in the floating gate. When the charges representing information in the floating gate should be erased, the whole EPROM is cooled, and the charges are discharged through the superconductive material and the control gate.

Abstract: This fast-access data storage circuit is made of a semiconductor material with a two-dimensional carrier gas between two of its layers. The material is rendered superconducting by a suitable choice of the temperature and magnetic field conditions. The circuit is formed by a plurality of memory cells, each of which is formed by two selection transistors, a semiconductor loop, ohmic contacts and a grid which is arranged on the loop and one of the contacts. The superconductivity reduces the access time. One selection controls the reading of data or the writing of a state "1" in the loop, while the other selection transistor controls the cancellation of the data and hence the writing of a state "0" by means of the grid arranged on the loop.

Abstract: A superconductive Josephson junction high density memory array is provided. Each memory cell in the array comprises a two branch superconducting interferometer storage loop which has only a single Josephson junction device in one of the branches. The Josephson junction devices are mounted on a substrate having a patterned ground plane. The ground plane pattern is provided with holes or apertures which surround the Josephson junction devices so that the control current of the control lines couple with the tunnel junctions of the Josephson junction devices but not with the ground plane. This structural arrangement provides a threshold characteristic for the single Josephson junction device which is symmetrical to the gate current, thus, may be easily switched to two current states indicative of two logic states.

Abstract: This superconductive latch circuit uses superconductive switching devices and can be powered by the same phase of AC power used to power other circuits with which the latch is used. The latch is comprised of a storage loop including a superconductive switch and an inductor. It is also comprised of another superconductive switch through which an AC gate current can flow and whose state determines whether or not the AC current is delivered to the superconductive storage loop. Information is stored in the loop as the presence and absence of a circulating current of either polarity. In a variation of this latch, an output of the sense circuit which detects the state of the storage loop if fed back as a control signal to the superconductive switch in the storage loop and also as one input to an AND gate to which a SET signal is also applied. AC power is switched to the storage loop when both inputs to the AND circuit are simultaneously present.

Abstract: A Programmable Logic Array (PLA) system which utilizes Josephson devices and the noninverting capabilities of these devices is disclosed. The disclosed PLA system includes a personalized Read Only Memory (ROM) which is adapted to store the applied input signals as well as the output signals which are a logic function of the input signals. As soon as outputs from the ROM are available, an interface circuit which may be timed or untimed, inverting or noninverting provides output signals which can be utilized to drive other logic circuits or to act as inputs to another personalized Read Only Memory (ROM). The latter provides another logic function of the inputs at its outputs. Again, the outputs may be used directly or applied to another interface circuit which itself may provide inverted or noninverted outputs.Like the first mentioned ROM, the second mentioned ROM is capable of storing its inputs and the resulting outputs which are some logic function of the inputs as a result of the ROM personalization.

Abstract: A switching and storage device is described in which a superconductor is arranged in regard to a magnetic or magnetizable element so that the magnetic field of the element surrounds the superconductor. The inner inductivity of the superconductor is subject to strong variation if at least one lateral dimension of the superconductor is comparable with or smaller than the penetration depth of the field into the superconducting material. If the superconductor is bifurcated, an electric current of sufficient magnitude fed externally distributes to flow essentially in one branch while the other branch essentially remains currentless. External control by a magnetic field can switch the current into the other branch, i.e., the device is bistable. The switching process inherently is fast and of low power consumption.

Abstract: A superconducting energy storage system comprising storage elements arrayed in a transmission line for receiving, storing, and reproducing charges in the form of current. The system stores charges in potential wells inside elements and moves the charges (representing stored energy) by applying external transfer voltages for moving the potential wells. The energy stored is increased by resonating the storage elements and/or by imparting kinetic energy to the stored charges. The system may be modified to store vortices instead of charges.