Abstract: A sense amplifier can be formed outside of/horizontally adjacent to an array of vertically stacked tiers of memory cells. Memory cells can be sensed via multiplexors formed under the array that can operate to couple vertical sense lines (to which the memory cells are coupled) to horizontal sense lines (to which the sense amplifier is coupled).

Abstract: In certain aspects, a method for operating a memory device is disclosed. The memory device includes a plurality of memory planes. Whether an instruction is an asynchronous multi-plane independent (AMPI) read instruction or a non-AMPI read instruction is determined. In response to the instruction being an AMPI read instruction, an AMPI read control signal is generated based on the AMPI read instruction, and the AMPI read control signal is directed to a corresponding memory plane of the memory planes. In response to the instruction being a non-AMPI read instruction, a non-AMPI read control signal is generated based on the non-AMPI read instruction, and the non-AMPI read control signal is directed to each memory plane of the memory planes.

Abstract: In certain aspects, a method for operating a memory device is disclosed. The memory device includes memory planes and multiplexers (MUXs). Each MUX includes an output coupled to a respective one of the memory planes, a first input receiving a non-asynchronous multi-plane independent (AMPI) read control signal, and a second input receiving an AMPI read control signal. Whether an instruction is an AMPI read instruction or a non-AMPI read instruction is determined. In response to the instruction being an AMPI read instruction, an AMPI read control signal is generated based on the AMPI read instruction, and a corresponding MUX is controlled to enable outputting the AMPI read control signal from the second input to the corresponding memory plane.

Abstract: An apparatus comprising a sorting unit to sort primitives of a graphics image, the primitives to be grouped, each group to form a first level node of a hierarchical acceleration structure; a parallel reconfigurable clustering array to construct the hierarchical acceleration structure, the parallel reconfigurable clustering array comprising a plurality of processing clusters, each cluster comprising: parallel efficiency analysis circuitry to evaluate different groupings of the first level nodes for a next level of the hierarchical acceleration structure to determine efficiency values for the different groupings; and node merge circuitry to merge the first level nodes based on the efficiency values to form second level nodes.

Abstract: Conventional SRAM sense-amplifiers are replaced by small-footprint keeper circuits that enable single-ended SRAM readout without bitline precharge, simplifying and relaxing the timing of SRAM cell access and bitline sampling operations and thus enabling potentially faster readout operation and/or lower bit error rate.

Abstract: A memory circuit includes a stack of first dies including multiple sets of memory cells of a first type, a second die including multiple sets of memory cells of a second type, a third die, and an interposer carrying the first, second, and third dies. The second die includes a first set of input/output (I/O) terminals on a top surface of the second die and a second set of I/O terminals on a bottom surface of the second die. The stack of first dies is coupled to the second die through the first set of I/O terminals. The interposer is coupled to the second die through the second set of I/O terminals. The third die is positioned aside the second die and in communication with the second die through the interposer.

Abstract: Techniques are disclosed relating to managing storage array invalidations. A computer system may comprise a processor core configured to operate in an idle state and operate in a run state in which the processor core executes instructions. The computer system may further comprise a power management circuit that is configured to receive, while the processor core is in the idle state, a set of invalidation requests directed to the processor core to invalidate a set of entries of a storage array of the processor core. The power management circuit may store invalidation information indicative of the set of invalidation requests. The power management circuit may determine that the processor core has received a request to transition to the run state. Prior to the processor core operating in the run state, the power management circuit may invalidate the set of entries of the storage array based on the invalidation information.

Abstract: A semiconductor device includes: a sense amplifier; a branched line selectively connectable to the amplifier; an array of bit lines connected to corresponding memory cells; and an intra-sense-amplifier recycling arrangement configured to do as follows including: recovering a first charge from a first bit line associated with a first one of the memory cells, the first charge being associated with a preceding first evaluation performed by the sense amplifier; and boosting the branched line to a reference voltage including reusing the first charge to at least partially charge the branched line; and wherein the sense amplifier is configured to make a second evaluation of a stored value in a second memory cell relative to the reference voltage.

Abstract: A memory is provided that includes a write multiplexer, which multiplexes among a plurality of bit line columns. The multiplexer includes a positive boost circuit that applies a positive boost to a voltage at the gates of transistors to strengthen an on state of those transistors. The positive boosting may be in addition to, or instead of, negative boosting at a write driver circuit.

Abstract: Methods, systems, and devices for valid data aware media reliability scanning are described. An apparatus may include a memory array comprising a plurality of blocks and a controller coupled with the memory array. The controller may be configured to select a block of the plurality of blocks for a scan operation to determine a margin of reliability for a first set of data stored in the block. The controller may identify information associated with a status of a validity of sub-blocks of the first set of data in the block. The controller may determine a first subset of the sub-blocks storing valid data of the first set of data and a second subset of sub-blocks that are invalid based on identifying the information. The controller may perform the scan operation on the first subset of sub-blocks and not on the second subset of sub-blocks in the block.

Abstract: Various implementations provide systems and methods for writing data to memory bit cells. An example implementation includes a write circuit that couples both a bitline and a complementary bitline to power (VDD) by positive-channel metal oxide semiconductor (PMOS) transistors. By using PMOS transistors instead of NMOS transistors at the applicable nodes, such implementations may avoid a voltage drop between VDD and the bitlines, thereby allowing the bitlines to reach a substantially full VDD voltage level when appropriate. Additionally, various implementations avoid dynamic nodes that share charge across NMOS transistors, thereby allowing a given bitline to reach a substantially full VDD voltage level when appropriate. Accordingly, some implementations may experience higher levels of writability and static noise margin than other implementations.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to provide row clear features. In some embodiments, the memory device may receive a command from a host device directed to a row of a memory array included in the memory device. The memory device may determine that the command is directed to two or more columns associated with the row, where each column is coupled with a group of memory cells. The memory device may activate the row to write the two or more columns using a set of predetermined data stored in a register of the memory device. Subsequently, the memory device may deactivate the word line based on writing the set of predetermined data to the two or more columns.

Abstract: Methods, systems, and devices for storing and reading data at a memory device are described. A memory device may utilize one or more storage states to store data within a data word. The memory device may exhibit higher data leakage or more power consumption when storing or reading a first storage state compared to storing or reading one or more other storage states. In some cases, the memory device may generate a second data word corresponding to a first data word by modifying each symbol type of the first data word to generate a different symbol type for the second data word. A memory device may reduce the occurrence of a storage state associated with large data leakage, or high-power consumption, or both. Further, the memory device may generate and store an indicator indicating the transformation of a corresponding data word.

Abstract: A memory device can comprise an arrays of memory cells comprising a plurality of vertically stacked tiers of memory cells, a respective plurality of horizontal access lines coupled to each of the plurality of tiers of memory cells, and a plurality of vertical sense lines coupled to each of the plurality of tiers of memory cells. The array of memory cells can further comprise a plurality of multiplexors each coupled to a respective vertical sense line, wherein each of the plurality of multiplexors includes a first portion and a second portion, the first portion is coupled to the array of memory cells and the second portion is formed on a substrate material. The array of memory cells can further comprise a semiconductor under the array (SuA) circuitry comprising a plurality of sense amplifiers, each sense amplifier coupled to a respective subset of the plurality of multiplexors.

Abstract: Disclosed herein are related to a memory system including unit storage circuits. In one aspect, each of the unit storage circuits abuts an adjacent one of the unit storage circuits. In one aspect, each of the unit storage circuits includes a first group of memory cells, a second group of memory cells, a first sub-word line driver to apply a first control signal to the first group of memory cells through a first sub-word line extending along a direction, and a second sub-word line driver to apply a second control signal to the second group of memory cells through a second sub-word line extending along the direction. In one aspect, the memory system includes a common word line driver abutting one of the unit storage circuits and configured to apply a common control signal to the unit storage circuits through a word line extending along the direction.

Abstract: A fuse array structure includes first and second active areas, first and second line contacts, first and second gate contacts and a common gate layer formed across the first and second active areas. The first line contact and the first gate contact are formed on the first active area. The second line contact and the second gate contact are formed on the second active area. The common gate layer is between the first active area and the first gate contact and is between the second active area and the second gate contact. The first active area, the first line contact, the first gate contact and the common gate layer form a first fuse. The second active area, the second line contact, the second gate contact and the common gate layer form a second fuse.

Abstract: Provided herein is a storage node of a distributed storage system and a method of operating the same. A memory controller may include a data controller configured to receive a write request and write data corresponding to the write request from a host, and configured to determine a physical address of a memory block in which the write data is to be stored based on chunk type information included in the write request, a memory control component configured to provide a program command for instructing the memory block to store the write data, the physical address, and the write data to the memory device, wherein the chunk type information is information about whether the write data indicates a type of data chunks or a type of coding chunks, the data chunks and the coding chunks being generated by the host performing an erasure coding operation on original data.

Abstract: A display device, an electronic equipment, and a method for driving a display device are disclosed. The display device includes a first light source group, a second light source group, a first image sensor group, and a second image sensor group. The first light source group is configured to emit light of a first determined frequency to illuminate a first partial region of a detection object, the second light source group is configured to emit light of a second determined frequency to illuminate a second partial region of the detection object, the first image sensor group is configured to receive the light of the first determined frequency emitted by the first light source group and reflected by the detection object, and the second image sensor group is configured to receive the light of the second determined frequency emitted by the second light source group and reflected by the detection object.

Abstract: Techniques for providing temperature trim codes to multiple reference circuits of an integrated circuit are provided. In an example, a string of primary latch circuits can provide a set of pre-defined temperature trim codes to a multiplexer in response to a token of a series of tokens. The multiplexer can provide two trim of the trim codes to an interpolator based on a temperature reading of the integrated circuit. The interpolator can provide an interpolated trim code and the trim code can be distributed to a reference circuit based on the token.

Abstract: Disclosed herein are related to a circuit and a method of reading or sensing multiple bits of data stored by a multi-level cell. In one aspect, a first reference circuit is selected from a first set of reference circuits, and a second reference circuit is selected from a second set of reference circuits. Based at least in part on the first reference circuit and the second reference circuit, one or more bits of multiple bits of data stored by a multi-level cell can be determined. According to the determined one or more bits, a third reference circuit from the first set of reference circuits and a fourth reference circuit from the second set of reference circuits can be selected. Based at least in part on the third reference circuit and the fourth reference circuit, additional one or more bits of the multiple bits of data stored by the multi-level cell can be determined.

Abstract: A method includes receiving an indicator at a basic input/output system of an information handling system, the indicator identifying that validation of a boot loader at a non-volatile memory at a data storage device failed authentication. The boot loader is configured to identify application layer firmware at the data storage device. The method further includes retrieving a replacement boot loader from a predetermined storage location and providing the replacement boot loader to a baseboard management controller (BMC). The method further includes transmitting the replacement boot loader to the data storage device via a serial interface other than a primary interface configured to support access of user data at the data storage device.

Abstract: A random access memory array including a plurality of local memory group ways, each local memory group way including, a plurality of local memory groups, each local memory group including, a memory column including a plurality of memory cells, a pair of local bitlines operatively connected to the plurality of memory cells, and a local group periphery including a local bitline multiplexer operatively connected with the pairs of local bitlines of the corresponding local memory group; and a pair of global read bitlines operatively connected to outputs of the plurality of local group peripheries, a global read bitline multiplexer operatively connected to outputs of the plurality of pairs of the global read bitlines from the local memory group ways, and a bitline operational block operatively connected an output of the global read bitline multiplexer.

Abstract: An expandable memory system that enables a fixed signaling bandwidth to be configurably re-allocated among dedicated memory channels. Memory channels having progressively reduced widths are dedicated to respective memory sockets, thus enabling point-to-point signaling with respect to each memory socket without signal-compromising traversal of unloaded sockets or costly replication of a full-width memory channel for each socket.

Abstract: A method, processor and/or system for processing data is disclosed that in an aspect includes providing a physical register file with one or more register file entries for storing data; identifying each physical register file entry with a row identifier to identify the entry row in the physical register file; enabling one or more columns within a target entry row of the physical register file; and revising data in the columns enabled within the target entry row of the physical register file. In an aspect, each physical register file entry is partitioned into a plurality of columns having a bit width and a column mask preferably is used to enable the one or more columns within the target row of the physical register file, and data is revised in only the columns enabled by the column mask.

Abstract: Apparatuses and methods for controlling the discharge of subword lines are described. The rate of discharge and/or the voltage level discharged to may be controlled. In some embodiments, a main word line may be driven to multiple low potentials to control a discharge of a subword line. In some embodiments, a first word driver line signal and/or a second word driver line signal may be reset to control a discharge of a subword line. In some embodiments, a combination of driving the main word line and the first word driver line signal and/or the second word driver line signal resetting may be used to control a discharge of the subword line.

Abstract: A system-on-chip is connected to a first memory device and a second memory device. The system-on-chip comprises a memory controller configured to control an interleaving access operation on the first and second memory devices. A modem processor is configured to provide an address for accessing the first or second memory devices. A linear address remapping logic is configured to remap an address received from the modem processor and to provide the remapped address to the memory controller. The memory controller performs a linear access operation on the first or second memory device in response to receiving the remapped address.

Abstract: Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.

Abstract: A memory device with built-in flexible redundancy is provided according to various aspects of the present disclosure. In certain aspects, a memory device includes a first sense amplifier, a second sense amplifier, a first comparator, a second comparator, a reference circuit, and a logic gate. During a redundant read operation, the first sense amplifier, the first comparator, and the reference circuit are used to read one copy of a redundant bit stored in the memory device, and the second sense amplifier, the second comparator, and the reference circuit are used to read another copy of the redundant bit stored in the memory device. The logic gate may then determine a bit value based on the bit values of the read copies of the redundant bit (e.g., determine a bit value of one if the bit value of at least one of the read copies of the redundant bit is one).

Abstract: Some embodiments include apparatuses having non-volatile memory cells, each of the non-volatile memory cells to store more than one bit of information; data lines, at most one of the data lines electrically coupled to each of the non-volatile memory cells; a circuit including transistors coupled to the data lines, the transistors including gates coupled to each other; and an encoder including input nodes and output nodes, the input nodes to receive input information from the data lines through the transistors, and the output nodes to provide output information having a value based on a value of the input information.

Abstract: Apparatuses and methods can be related to configuring interface protocols for memory. An interface protocol can define the commands received by a memory device utilizing transceivers, receivers, and/or transmitters of an interface of a memory device. An interface protocol used by a memory device can be implemented utilizing a decoder of signals provided via a plurality of transceivers of the memory device. The decoder utilized by a memory device can be selected by setting a mode register of the memory device.

Abstract: A pseudo static random access memory including a plurality of memory chips and an information storing device is provided. The memory chips transmit a plurality of read/write data strobe signals to a memory controller by using a same bus. Regardless of whether a self refresh collision occurs in the memory chips, when the memory chips perform a read operation, read latency of the memory chips is set to be a fixed period that self refresh is allowed to be completed. The fixed period is greater than initial latency. The information storing device is configured to store information which defines the fixed period. The read/write data strobe signal indicates whether the self refresh collision occurs in the memory chips, and a level of the read/write data strobe signals is constant during the read latency. A method for operating a pseudo static random access memory is also provided.

Abstract: A memory device includes a first plurality of memory cells, a second plurality of memory cells, and a local sense amplifier between the first plurality of memory cells and the second plurality of memory cells, all on a first level, and a local bit line on a second level. The second level is vertically separated by one or more first inter-level dielectric layers from the first level in a first direction and the local bit line is electrically coupled to each memory cell of the first plurality of memory cells and the second plurality of memory cells, as well as the local sense amplifier. The memory device also includes a global bit line on a third level vertically separated by one or more inter-level dielectric layers from the first level in a second direction opposite the first direction, with the global bit line electrically coupled to the local sense amplifier.

Abstract: A memory system comprises a first memory device and a processing device operatively coupled to the first memory device. The processing device is configured to determine whether to execute a write cycle, at the first memory device, to write data from a second memory device to the first memory device based on persisted data stored by the first memory device.

Abstract: Single error correction (“SEC”) code and triple error detection (“TED”) code are used to optimize bandwidth and resilience under multiple bit failures. One or more errors in data stored in duplicated registers are detected and corrected using the SEC code and TED code where simultaneous read operations are produced with two copies of data for each of the duplicated registers for a multi-port banked memory array. The SEC code and TED code may be included in each of the two data copies of the simultaneous read operations.

Abstract: A method for duty cycle error detection and correction includes receiving, during a read operation performed on a memory cell, a first data strobe signal. The method also includes generating a second data strobe signal by phase delaying the first data strobe signal. The method also includes determining, based on the first data strobe signal and the second data strobe signal, whether a duty cycle corresponding to the first data strobe signal is distorted. The method also includes adjusting a clock signal based on a determination that the duty cycle is distorted.

Abstract: A circuit includes a multipath memory having multiple cells and a plurality of sequence generators. Each sequence generator of the plurality of sequence generators drives one separate cell of the multiple cells via an automatic test pattern generator (ATPG) mode signal for each cell. The ATPG mode signal for each cell is configured via a sequence configuration input that controls a timing sequence to test each cell. The state of the ATPG mode signal of each cell selects whether test data or functional data is output from the respective cell.

Abstract: Systems and methods for selective communication through a DIMM socket via a multiplexer. A system comprises a computer interface board that includes at least two DIMM sockets, a communication bus circuitry and a control circuitry coupled to the at least two DIMM sockets. The communication bus circuitry includes a first portion of a first bus configured to receive a first set of data, and a second portion of the first bus configured to receive a second set of the data. The control circuitry includes a multiplexer coupled to a first DIMM socket and the first portion of the first bus, the first multiplexer configured to enable the control circuitry to selectively communicate through the first DIMM socket, via the first portion of the first bus, using one of the number of communication protocols.

Abstract: A high bandwidth register file circuit that significantly reduces the shared local read bitline RC delay to enable ultra-high performance PRFs with high port counts. In one example, the register file circuit includes read stack nfets in a multiplexer circuit instead of the memory cell causing the local read bitline RC to be independent of the number of read and write ports of the memory cell.

Abstract: A nonvolatile semiconductor memory device comprises a cell unit including a first and a second selection gate transistor and a memory string provided between the first and second selection gate transistors and composed of a plurality of serially connected electrically erasable programmable memory cells operative to store effective data; and a data write circuit operative to write data into the memory cell, wherein the number of program stages for at least one of memory cells on both ends of the memory string is lower than the number of program stages for other memory cells, and the data write circuit executes the first stage program to the memory cell having the number of program stages lower than the number of program stages for the other memory cells after the first stage program to the other memory cells.

Abstract: A system generating, using a first addressable unit address decoder, a first addressable unit address based on an input address, an interleaving factor, and a number of first addressable units. The system then generating, using an internal address decoder, an internal address based on the input address, the interleaving factor, and the number of first addressable units. Generating the internal address includes: determining a lower address value by extracting lower bits of the internal address, determining an upper address value by extracting upper bits of the internal address, and adding the lower address value to the upper address value to generate the internal address. Using an internal power-of-two address boundary decoder and the internal address, the system then generating a second addressable unit address, a third addressable unit address, a fourth addressable unit address, and a fifth addressable unit address.

Abstract: Apparatus and method for transferring data between a processing circuit and a memory. In some embodiments, a data storage device has a main non-volatile memory (NVM) configured to store user data from a host device. A controller circuit is configured to direct transfers of the user data between the NVM and the host device. The controller circuit has a programmable processor and a secure data transfer circuit. The secure data transfer circuit executes memory access operations to transfer user data and control values between the processor and a local memory. A memory access operation includes receiving bits of a multi-bit control value on a multi-line bus from the processor, and activating a programmable switching circuit to randomly interconnect different ones of the multi-line bus to transpose the bits in the control value.

Abstract: A storage unit and a static random access memory (SRAM), where storage unit includes a latch, and the latch provides a first storage bit. The storage unit further includes a first metal-oxide-semiconductor (MOS) transistor. A gate of the first MOS transistor is coupled to the first storage bit, a source of the first MOS transistor is coupled to a first read line, and a drain of the first MOS transistor is coupled to a second read line. In a first state, the first read line is a read word line, and the second read line is a read bit line, or in a second state, the second read line is a read word line, and the first read line is a read bit line. The storage unit according to embodiments of the present invention can implement an exchange between a read word line and a read bit line.

Abstract: A semiconductor storage device includes a memory array at which writing and reading of plural data are carried out, one pair of write registers that temporarily store write data that is to be written into the memory array, and one pair of read registers that temporarily store read data that is read-out from the memory array.

Abstract: A semiconductor device includes a plurality of stacked dies electrically connected with each other. Each of the stacked dies includes a data path, a strobe path, a stack information generation circuit, and a delay control circuit. The data path transmits a data signal. The strobe path transmits a data strobe signal. The stack information generation circuit generates stack information representing a number of the dies. The delay control circuit controls a delay time of at least one of the data path and the strobe path based on the stack information.

Abstract: Apparatuses, systems, and methods are presented for column replacement. An input register, which includes a set of input divisions, may receive write data for a memory array. An output register, which includes a set of normal output divisions and a set of replacement output divisions, may output write data to an array. A column replacement circuit may selectively couple input divisions to output divisions. A column replacement circuit may couple normal output divisions for functional columns of an array to corresponding input divisions. A column replacement circuit may couple replacement output divisions for functional columns of an array to input divisions selected by the column replacement circuit, which may be corresponding input divisions or other input divisions.

Abstract: Apparatuses and methods for providing multiphase clocks are disclosed. An example apparatus includes a plurality of clock circuits, each configured to provide one of the multiphase clocks responsive to a respective input clock. The apparatus further includes first and second control circuits. The first control circuit receives a first one of the multiphase clocks and a reset signal provided to the plurality of clock circuits, and provides a first control signal to reset a clock circuit of the plurality of clock circuits that is based on the first one of the multiphase clocks and the reset signal. The second control circuit receives the control clock and a second one of the multiphase clocks and provides a second control signal to clock the clock circuit of the plurality of clock circuits that is based on the control clock and the second one of the multiphase clocks.

Abstract: Methods and systems for pre-fetching operations include executing event callbacks in an event loop using a processor until execution stops on a polling request. A path walk is performed on future events in the event loop until the polling request returns to pre-fetch information for the future events into a processor cache associated with the processor. Execution of the event callbacks in the event loop is resumed after the polling request returns.

Abstract: A processing array that performs one cycle full adder operations. The processing array may have different bit line read/write logic that permits different operations to be performed.

Abstract: An SRAM bit-cell with independent write and read ports and an architecture utilizing a feedback loop from the read port to the write port of half-selected bit-cells. This guarantees absolute data retention of all SRAM bit-cells not fully selected for write operation across a wide range of supply voltage spanning from the nominal voltage of a process to a sub-threshold range.

Abstract: In the described examples, a memory controller includes a read-modify-write logic module that receives a partial write data request for partial write data in error-correcting code (ECC) memory and combines the partial write data in the partial write data request with read data provided from the ECC memory to form combined data prior to correcting the read data. The memory controller also includes a write control module that controls the writing of the combined data to the ECC memory.