Abstract: Apparatuses and methods can be related to performing operations in memory. Operations can be performed in the background while the memory is performing different operations. For example, comparison operations can be performed by the memory device while the memory device is reading data. The results of the comparison operations can be stored in registers of the memory device. The registers can be made accessible externally to the memory device.

Abstract: Apparatus and methods of reducing dock path power consumption are described herein. According to one embodiment, an example apparatus includes a clock control circuit. The clock control circuit includes a command/address domain configured to selectively provide a command/address clock signal based, at least in part, on a chip select signal. The clock control circuit further includes a command domain circuit configured to selectively provide a command clock signal based, at least in part, on the chip select signal. The clock control circuit further includes a column latency domain circuit configured to selectively provide a column latency clock signal based, at least in part, on a memory command. The clock control circuit further includes a four phase domain circuit configured to selectively provide a four phase clock signal based, at least in part, on the memory command.

Abstract: Apparatuses and methods for writing data to a memory array are disclosed. When data is duplicative across multiple data lines, data may be transferred across a single line of a bus rather than driving the duplicative data across all of the data lines. The data from the single data line may be provided to the write amplifiers of the additional data lines to provide the data from all of the data lines to be written to the memory. In some examples, error correction may be performed on data from the single data line rather than all of the data lines.

Abstract: A method for controlling a multi-cycle write leveling process in a memory system is provided. After a write leveling process is completed and before a write training process is performed, the multi-cycle write leveling process is performed. Consequently, when a DDR memory of the memory system receives a clock signal and a first data strobe signal, the DDR memory can confirm that the signal edges of the clock signal and the first data strobe signal are aligned with each other and the signal edges are accurate.

Abstract: A dynamic random access memory (DRAM) device includes an on-die termination (ODT) controller including an input to receive an ODT signal from a memory controller, and ODT circuitry to terminate an interface circuit, the interface circuit to provide a data signal between the memory controller and the DRAM device. The ODT controller is configured in a first impedance switching mode to terminate the interface circuit at a first impedance level in response to a first state of the ODT signal, to terminate the interface circuit at a second impedance level in response to a second state of the ODT signal, and to terminate the interface circuit at a third impedance level in response to a change in the ODT signal from the first state to the second state, the third impedance level being between the first impedance level and the second impedance level.

Abstract: Methods, systems, and devices for modifying subsets of memory bank operating parameters are described. First global trimming information may be configured to adjust a first subset of operating parameters for a set of memory banks within a memory system. Second global trimming information may be configured to adjust a second subset of operating parameters for the set of memory banks. Local trimming information may be used to adjust one of the subsets of the operating parameters for a subset of the memory banks. To adjust one of the subsets of the operating parameters, the local trimming information may be combined with one of the first or second global trimming information to yield additional local trimming information that is used to adjust a corresponding subset of the operating parameters at the subset of the memory banks.

Abstract: The present disclosure generally relates to calibrating the communication with a memory device. To ensure proper calibration, interface training (IFT) needs to occur. IFT involves aligning the sampling point, which is an inflection point, of a clock signal with a data signal. The sampling point of the clock (i.e., the clock edge) needs to be located within the valid window of the data signal. The valid window of the data signal is the time in which the signal is guaranteed to be stable, i.e., after the signal has finished the signal transition time. If the sampling point is aligned with the inflection point of the data signal, then the data signal is not properly aligned. If the sampling point is aligned with the rising or falling edge of the data signal, the data may be obtained, but the data signal is misaligned and is dangerously close to being unreadable.

Abstract: Disclosed is a computer implemented method to mark data as persistent using spare bits. The method includes receiving, by a memory system, a set of data, wherein the set of data includes a subset of meta-bits, and the set of data is received as a plurality of transfers, and wherein the memory system includes a first rank and a second rank. The method also includes decoding, by a decoder, the subset of meta-bits, wherein the subset of meta-bits are configured to indicate the set of data is important. The method further includes storing, based on the decoding, the set of data in a persistent storage medium.

Abstract: A semiconductor device includes a latch circuit including a first inverter configured to output a first signal based on an input signal, a second inverter configured to output a first clock signal based on a first strobe signal, a third inverter configured to output a second clock signal based on a second strobe signal, a first clock generation circuit configured to generate a third clock signal having transitions that are delayed with respect to the first clock signal, a second clock generation circuit configured to generate a fourth clock signal having transitions that are delayed with respect to the second clock signal, a fourth inverter configured to output an inversion signal of the first signal in accordance with the third and fourth clock signals, and a data latch circuit configured to latch an output signal of the fourth inverter.

Abstract: A memory device includes a clock generating circuit suitable for generating a plurality of internal clock signals based on an external clock signal during an output period of read data, in response to a read command, and a data strobe output circuit suitable for outputting a first data strobe signal to a data strobe pad in response to the internal clock signals, wherein the internal clock signals toggle regardless of the output period of the read data, in response to a test mode signal.

Abstract: Data bus includes a device controller coupled to a first interface for digital communications using a first communications protocol, the device controller including a master bus controller controlling a multi-drop bus using a second communications protocol, and a slave device coupled to the multi-drop bus and configured to transmit and receive digital communications with the device controller using the second communications protocol. Each transmission line end is terminated using a device attached at one end of the transmission line and by another device attached at the other end. The second communications protocol supports multiple data rates using a fixed frame format. Safe synchronization may be established by systematically eliminating all false positions instead of searching for a valid candidate. Noise in the audio band may be lowered by scrambling of the data using a pseudo-random generator.

Abstract: Systems and methods are described including a page buffer to reduce a threshold voltage distribution skew of memory cells and improve programming performance. The page buffer includes a first circuit element connected to a first terminal for supplying a first bitline voltage, a second circuit element connected to a second terminal for supplying a second bitline voltage, and a latch configured to control the first and second circuit elements.

Abstract: The present disclosure includes apparatuses and methods for shift decisions. An example apparatus includes a memory device. The memory device includes an array of memory cells and sensing circuitry coupled to the array via a plurality of sense lines. The sensing circuitry includes a sense amplifier and a compute component coupled to a sense line and configured to implement logical operations and a decision component configured to implement a shift of data based on a determined functionality of a memory cell in the array.

Abstract: Implementations of the disclosure provide for unmarshalling objects from a back-end server graph database as they would be available in local memory at a client device. An apparatus is provided that comprises a memory and a processing device to inspect a graph model associated with an object comprising a plurality of node data structures. The graph model defines one or more services provided by each node of the object. Using a graph database, graph data elements are identified for at least one node data structure of the object in view of the inspected graph model. Metadata that describes the object associated with the inspected graph mode is generated. Thereupon, the metadata is provided to reconstruct using the graph data elements the one or more services associated with the object at a client device.

Abstract: A memory, a memory chip and a memory data access method are provided. The memory of the disclosure includes a plurality of memory chips. Each of the plurality of memory chips includes a first bank group, a second bank group and a read amplifier and a write amplifier. The first bank group includes a plurality of first memory banks. The second bank group includes a plurality of second memory banks. The read amplifier and the write amplifier are separately coupled to the first bank group and the second bank group. The read amplifier and the write amplifier are configured to independently access different bank groups.

Abstract: A read method executed by a computing system includes a processor, at least one nonvolatile memory, and at least one cache memory performing a cache function of the at least one nonvolatile memory. The method includes receiving a read request regarding a critical word from the processor. A determination is made whether a cache miss is generated, through a tag determination operation corresponding to the read request. Page data corresponding to the read request is received from the at least one nonvolatile memory in a wraparound scheme when a result of the tag determination operation indicates that the cache miss is generated. The critical word is output to the processor when the critical word of the page data is received.

Abstract: A computing apparatus, including: a processor; a pointer to a counter memory location; and a lazy increment counter engine to: receive a stimulus to update the counter; and lazy increment the counter including issuing a weakly-ordered increment directive to the pointer.

Abstract: Various implementations described herein are related to a device having a sense amplifier with multiple output ports. The device may include tri-state buffer circuitry having multiple tri-state buffers coupled to the multiple output ports of the sense amplifier. The device may include latch circuitry having multiple latches coupled to the multiple tri-state buffers of the tri-state buffer circuitry.

Abstract: Apparatuses for executing interrupt refresh are described. An example apparatus includes: memory banks, a sampling timing generator circuit, bank sampling circuits and a command state signal generator circuit that provides a command state signal responsive to a command. Each memory bank includes a latch that stores an address for interrupt refresh. The sampling timing generator circuit receives an oscillation signal and provides a trigger signal of sampling the address. Each bank sampling circuit is associated with a corresponding memory bank. Each bank sampling circuit provides a sampling signal to the latch in the corresponding memory bank responsive to the trigger signal of sampling the address. The sampling timing generator circuit provides the trigger signal of sampling the address, responsive, at least in part, to the command state signal, and the latch stores the address, responsive, at least in part, to the at least one trigger signal of sampling the address.

Abstract: A method of reconfiguration and a reconfigurable circuit architecture comprising a configurable volatile storage circuit and Non-Volatile Memory circuit elements; wherein the Non-Volatile memory circuit elements store multiple bit states for re-configuration, the multiple bit states being read from the Non-Volatile memory circuit elements and written into the configurable volatile storage circuit for reconfiguration. The Non-Volatile Memory circuit elements and the configurable volatile storage circuit are provided on a common die.

Abstract: An example apparatus includes a first circuit configured to generate a first enable signal based on a first clock signal and a first command signal, a second circuit configured to generate a second enable signal based on the first clock signal and a second command signal, a third circuit configured to generate a second clock signal based on the first clock signal when the first enable signal is activated, a fourth circuit configured to generate a third clock signal based on the first clock signal when the second enable signal is activated, a first latch circuit configured to latch the second command signal in response to the second clock signal to generate a third command signal, and a second latch circuit configured to latch the third command signal in response to the third clock signal to generate a fourth command signal.

Abstract: A node (200) of a communication network determines a precision to be applied for reporting of consumption of streamed content. The node (200) sends configuration information (304) indicating the precision towards a plurality of client devices (10). After receiving reports of consumption (308) of the streamed content from at least some of the client devices (10), the node (200) adapts the precision to be applied for said reporting of consumption of the streamed content and sends further configuration information indicating the adapted precision towards the client devices (10).

Abstract: Provided herein is a memory device and a method of operating the same. The memory device may include a memory cell array including a plurality of memory cells, page buffers coupled to the memory cell array through respective bit lines and a control logic configured to control so that, during a read operation, data stored in the memory cell array is sensed and stored in the page buffers, and the data stored in the page buffers is output to an external device, wherein the control logic controls a time point at which a discharge operation is to be performed after the sensing of the data, and a time point at which a data transfer operation between latches included in each of the page buffers is to be performed, in response to a read command received from the external device.

Abstract: A column control circuit may include a column control signal generation circuit and a column access block signal generation circuit. The column control signal generation circuit is configured to activate an input/output strobe signal when a column access block signal is deactivated. The column control signal generation circuit is configured to deactivate the input/output strobe signal when the column access block signal is activated. The column access block signal generation circuit is configured to activate the column access block signal when gap-less read commands may be inputted. The column access block signal generation circuit may deactivate the column access block signal during a period corresponding to an N-th read command among the gap-less read commands. N is an integer that is no less than 2.

Abstract: A memory device is provided. The device comprises a substrate, a controller, at least a tap, a plurality of memory modules, and at least two resistors. The controller connects to the substrate. The tap, the memory modules, and the resistors are set on the substrate. The tap comprises an input terminal connecting to the controller; a first output terminal; and a second output terminal. After connecting to each other in series, the memory modules connect to the first output terminal and the second output terminal. Each of the resistors connects to one of the memory modules which connect to the first output terminal and the second output terminal. Thus, command signals, address signals, and timing signals are separately sent to the memory modules through the first output terminal and the second output terminal of the tap simultaneously to process instruction or read information by the controller.

Abstract: A memory module includes a random access memory (RAM) device that includes a first storage region and a second storage region, a nonvolatile memory device, and a controller that controls the RAM device or the nonvolatile memory device under control of a host. The controller includes a data buffer that temporarily stores first data received from the host, and a buffer returning unit that transmits first release information to the host when the first data are moved from the data buffer to the first storage region or the second storage region of the RAM device and transmits second release information to the host when the first data are moved from the second storage region to the nonvolatile memory device.

Abstract: A nonvolatile memory device may include a plurality of memory planes and a plurality of plane-dedicated pad sets. The plurality of memory planes may include a plurality of memory cell arrays including nonvolatile memory cells and a plurality of page buffer circuits. Each of the plurality of page buffer circuits may be connected to ones of the nonvolatile memory cells included in each of the plurality of memory cell arrays through bitlines. A plurality of plane-dedicated pad sets may be connected to the plurality of page buffer circuits through a plurality of data paths respectively such that each of the plurality plane-dedicated pad sets is dedicatedly connected to each of the plurality of page buffer circuits. A bandwidth of a data transfer may be increased by reducing a data transfer delay and supporting a parallel data transfer, and power consumption may be decreased by removing data multiplexing and/or signal routing.

Abstract: A memory system includes: a memory device; and a controller suitable for performing: a free block management operation of detecting victim blocks onto which a garbage collection operation is to be performed to generate required free blocks; a garbage collection operation time management operation of calculating an estimated garbage collection operation time for the detected victim blocks; and a garbage collection operation period management operation of dynamically changing a garbage collection operation period based on the estimated garbage collection operation time and periodically performing a garbage collection operation based on the garbage collection operation period during a specific time, wherein the controller repeatedly performs, whenever an update period arrives, the free block management operation, the garbage collection operation time management operation, and the garbage collection operation period management operation.

Abstract: The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.

Abstract: Memory devices and systems with on-die data transfer capability, and associated methods, are disclosed herein. In one embodiment, a memory device includes an array of memory cells and a plurality of input/output lines operably connecting the array to data pads of the device. In some embodiments, the memory device can further include a global cache and/or a local cache. The memory device can be configured to internally transfer data stored at a first location in the array to a second location in the array without outputting the data from the memory device. To transfer the data, the memory device can copy data on one row of memory cells to another row of memory cells, directly write data to the second location from the first location using data read/write lines of the input/output lines, and/or read the data into and out of the global cache and/or the local cache.

Abstract: Apparatuses and methods for signal line buffer timing control are disclosed. An example apparatus includes a plurality of signal lines including first and second control lines and further including data lines, and further includes first and second signal line buffers. The first signal line buffer includes first driver circuits configured to drive respective data signals on the data lines and to drive first and second control signals on the first and second control lines, respectively. The second signal line buffer includes second driver circuits configured to be activated to receive the data signals. The first and second control signals arrive at the second signal line buffer at different times. The second driver circuits are activated responsive a later one of active first and second control signals and are deactivated responsive to an earlier one of inactive first and second control signals.

Abstract: A data operating method, device, and system are provided and relate to the computer field, so as to resolve a prior-art problem of low efficiency of performing a data operation on a block device by a CPU. The method includes: receiving an operation instruction sent by a CPU; when the operation instruction is a read instruction, reading a first data block in the block device and returning to-be-read data in the first data block to the CPU; or when the operation instruction is a write instruction, writing, into a cache, to-be-written data indicated by the write instruction, and writing, into the block device, a second data block that includes the to-be-written data. The method is used to operate data in a block device.

Abstract: A system and method include receiving, by a database engine of a database system associated with a virtual computing system, a user request via a dashboard for provisioning a source database with the database system, receiving, by the database engine via the dashboard, selection of a database engine type, and receiving, by the database engine via the dashboard, selection of a Service Level Agreement (“SLA”) and a protection schedule. The system and method also include provisioning, by the database engine, the source database based upon the database engine type, creating, by the database engine, an instance of a database protection system based upon the SLA and the protection schedule, including associating the instance of the database protection system with the source database, and displaying, by the database engine, the source database within the dashboard.

Abstract: The present disclosure includes apparatuses and methods for compute in data path. An example apparatus includes an array of memory cells. Sensing circuitry is coupled to the array of memory cells. A shared input/output (I/O) line provides a data path associated with the array. The shared I/O line couples the sensing circuitry to a compute component in the data path of the shared I/O line.

Abstract: Methods, systems, and devices for delay calibration oscillators for a memory device are described. In some examples, a memory device may include a delay chain operable (e.g., for a calibration operation) in a ring oscillator configuration that includes a pulse generator. The pulse generator may be configured to output a pulse signal responsive to a transition of an input signal. By generating a pulse signal in a feedback loop of a ring oscillator, the ring oscillator may support a cycle that does not rely on both a first transition propagation pass (e.g., a rising edge propagation) and a responsive, opposite transition propagation pass (e.g., a falling edge propagation) through the delay chain, which may support a ring oscillator cycle time (e.g., period) that more closely represents aspects of the delay chain that are meant to be calibrated.

Abstract: An emission driver includes a latch circuit and a buffer circuit. The latch circuit receives a first signal, a second signal, and a first clock signal. The latch circuit includes a first output terminal and a second output terminal. The first output terminal of the latch circuit outputs a third signal according to the first clock signal. The second output terminal of the latch circuit outputs a fourth signal in reverse to the third signal according to the first clock signal. The buffer circuit includes a first input terminal, a second input terminal and a third output terminal. The first input terminal of the buffer circuit receives the third signal. The second input terminal of the buffer circuit receives the fourth signal. The third output terminal of the buffer circuit outputs an emission signal according to the third signal and the fourth signal.

Abstract: To provide a semiconductor device which can execute the product-sum operation. The semiconductor device includes a first memory cell, a second memory cell, and an offset circuit. First analog data is stored in the first memory cell, and reference analog data is stored in the second memory cell. The first memory cell and the second memory cell supply a first current and a second current, respectively, when a reference potential is applied as a selection signal. The offset circuit has a function of supplying a third current corresponding to a differential current between the first current and the second current. In the semiconductor device, the first memory and the second memory supply a fourth current and a fifth current, respectively, when a potential corresponding to second analog data is applied as a selection signal.

Abstract: Systems are methods are provided for implementing an analog content addressable memory (analog CAM), which is particularly structured to allow for an amount of variance (fuzziness) in its search operations. The analog CAM may search for approximate matches with the data stored therein, or matches within a defined variance. Circuitry of the analog CAM may include transistor-source lines that receive search-variance parameters, and/or data lines that receive search-variance parameters explicitly within the search input data. The search-variance parameters may include an upper bound and a lower bound that define a range of values within the allotted amount of fuzziness (e.g., deviation from the stored value). The search-variance parameters may program (using analog approaches) the analog CAM to perform searches having a modifiable restrictiveness that is tuned dynamically, as defined by the input search-variance. Thus, highly efficient hardware for complex applications involving fuzziness are enabled.

Abstract: A programmable semiconductor integrated circuit fabricated on a single microchip device capable of being selectively programmed to perform one or more logic functions provides a sleep mode using an intermittent power saving logic. The circuit includes configurable logic blocks (“LB”), memory, switch, and sleep controller. While LB can enter a power saving sleep mode (“PSSM”) in accordance with its power supply, the memory stores the configuration information for the LB. The switch is configured to manage the LB power supply based on a configurable sleep signal for facilitating the PSSM. The sleep controller facilitates generation of the configurable sleep signal in response to the signal from a power saving output port associated with the LB.

Abstract: A programmable arbitrary sequence direct memory access (DMA) controller accesses sequentially addressed memory locations (source or destination) using address pointer registers. Each sequentially addressed memory location containing an indirect memory address is stored in an address latch and used to access the actual non-sequential memory location to be accessed by the DMA transfer.

Abstract: A method of correcting a memory error of a dynamic random-access memory module (DRAM) using a double data rate (DDR) interface, the method includes conducting a memory transaction including multiple bursts with a memory controller to send data from data chips of the DRAM to the memory controller, detecting one or more errors using an ECC chip of the DRAM, determining a number of the bursts having the errors using the ECC chip of the DRAM, determining whether the number of the bursts having the errors is greater than a threshold number, determining a type of the errors, and directing the memory controller based on the determined type of the errors, wherein the DRAM includes a single ECC chip per memory channel.

Abstract: A semiconductor circuit and an operating method for the same are provided. The method includes the following steps. A memory circuit is operated during a first timing to obtain a first memory state signal S1. The memory circuit is operated during a second timing after the first timing to obtain a second memory state signal S2. A difference between the first memory state signal S1 and the second memory state signal S2 is calculated to obtain a state difference signal SD. A calculating is performed to obtain an un-compensated output data signal OD relative with an input data signal ID and the second memory state signal S2. The state difference signal SD and the un-compensated output data signal OD are calculated to obtain a compensated output data signal OD?.

Abstract: Apparatuses including a first-in first-out circuit are described. An example apparatus includes: a first-in first-out circuit including a first latch, a second latch and a logic circuit coupled in series. The first latch receives first data and latches the first data responsive to a first input pointer signal. The second latch receives the latched first data from the first latch and latches the received first data responsive to a second input pointer signal that has a different phase from the first input pointer signal and thus provides a second data. The logic circuit receives the second data and an output pointer signal and further provides an output data responsive to the output pointer signal.

Abstract: A memory component includes a memory bank comprising a plurality of storage cells and a data interface block configured to transfer data between the memory component and a component external to the memory component. The memory component further includes a plurality of column interface buses coupled between the memory bank and the data interface block, wherein a first column interface bus of the plurality of column interface buses is configured to transfer data between a first storage cell of the plurality of storage cells and the data interface block during a first access operation and wherein a second column interface bus of the plurality of column interface buses is configured to transfer the data between the first storage cell and the data interface block during a second access operation.

Abstract: Life of a non-volatile memory is extended without increasing processing time due to turning power ON/OFF. An EEPROM stores counter information and setting information, a first RAM and a second RAM store counter information and setting information, a memory management unit manages a storage area in the first RAM for the counter information and setting information so as to be updatable and manages a storage area in the second RAM for the counter information and setting information so as not to be updatable, and a system control unit, when a change in contents of the counter information and the setting information occurs, rewrites the counter information and the setting information in the first RAM in accordance to the changed contents, and when the power is turned OFF, reads and compares the counter information and the setting information in the first RAM with the counter information and the setting information in the second RAM, and writes only different data to the EEPROM.

Abstract: An array organization and architecture for a content addressable memory (CAM) system. More specifically, a circuit is provided for that includes a first portion of the CAM configured to perform a first inequality operation implemented between 1 to n CAM entries. The circuit further includes a second portion of the CAM configured to perform a second inequality operation implemented between the 1 to n CAM entries. The first portion and the second portion are triangularly arranged side by side such that the first inequality operation and the second inequality operation are implemented between the 1 to n CAM entries using the same n wordlines.

Abstract: Embodiments of the invention are generally directed to systems, methods, and apparatuses for hybrid memory. In one embodiment, a hybrid memory may include a package substrate. The hybrid memory may also include a hybrid memory buffer chip attached to the first side of the package substrate. High speed input/output (HSIO) logic supporting a HSIO interface with a processor. The hybrid memory also includes packet processing logic to support a packet processing protocol on the HSIO interface. Additionally, the hybrid memory also has one or more memory tiles that are vertically stacked on the hybrid memory buffer.

Abstract: A semiconductor device includes a memory circuit, a first FIFO, a second FIFO and an input/output circuit. The memory circuit outputs data. The first FIFO receives data from the memory circuit and outputs data synchronously with a first clock signal. The second FIFO receives data output from the first FIFO and outputs data synchronously with the first clock signal. The input/output circuit outputs data output from the second FIFO. The second FIFO is disposed in the vicinity of the input/output circuit than the first FIFO.

Abstract: A semiconductor device includes an information signal generation circuit configured to store the register information depending on an input control signal generated based on the mode register read command, and output the stored register information depending on an output control signal generated based on the mode register read command.

Abstract: A semiconductor apparatus includes a command decoding circuit and an enable signal generation circuit. The command decoding circuit generates a plurality of operation codes and a strobe pulse based on a command signal and a clock signal. The enable signal generation circuit generates a seed signal based on at least a part of an operation code, among the plurality of operation codes, and the strobe pulse, and generates an enable signal by shifting the seed signal. The enable signal generation circuit generates a plurality of guard keys, after the seed signal is generated, based on the plurality of operation codes and the strobe pulse, and prevents the generation of the enable signal when any one of the plurality of guard keys is disabled.