Abstract: A memory cell includes a silicon-on-insulator (SOI) substrate, an electrically floating body transistor fabricated on the silicon-on-insulator (SOI) substrate, and a charge injector region. The floating body transistor is configured to have more than one stable state through an application of a bias on the charge injector region.

Abstract: Static random access memory (SRAM) bit cells with wordline landing pads split across boundary edges of the SRAM bit cells are disclosed. In one aspect, an SRAM bit cell is disclosed employing write wordline in second metal layer, first read wordline in third metal layer, and second read wordline in fourth metal layer. Employing wordlines in separate metal layers allows wordlines to have wider widths, which decrease wordline resistance, decrease access time, and increase performance of SRAM bit cell. To employ wordlines in separate metal layers, multiple tracks in first metal layer are employed. To couple read wordlines to the tracks to communicate with SRAM bit cell transistors, landing pads are disposed on corresponding tracks inside and outside of a boundary edge of the SRAM bit cell. Landing pads corresponding to the write wordline are placed on corresponding tracks within the boundary edge of the SRAM bit cell.

Abstract: Systems and techniques are disclosed for the mirroring of cache data from a storage controller to a storage class memory (“SCM”) device. The storage controller receives a write request, caches the write data, and mirrors the write data to the SCM device instead of to a cache of another storage controller. The SCM device stores the mirrored data in the SCM device. The storage controller acknowledges the write to the host. If the storage controller later fails, an alternate controller assumes ownership of storage volumes associated with the failed controller. Upon receipt of a new read request to the failed controller, the alternate controller checks the SCM device for a cache hit. If there is, the data is read from the SCM device; otherwise, it is read from the storage volume(s). The read data is cached at the alternate controller and then sent on to the requesting host.

Abstract: An integrated circuit may have configurable storage blocks. A configurable storage block may include a memory array, an arithmetic circuit, and a control circuit. The control circuit may be used to determine whether to operate the configurable storage block in a first mode which may provide random access to the memory array or in a second mode which may provide access to the memory array in a predefined order. Thus, the configurable storage block may implement first-in first-out modules, shift registers, or delay-line modules in addition to implementing memory modules with random access.

Abstract: An apparatus is provided which comprises: a memory array; first logic to detect whether first and second word-lines (WL) for a row of the memory array are active; and second logic to deactivate one of the first and second WLs such that one of the first and second WLs is active for the row.

Abstract: Static random access memory (SRAM) bit cells with wordlines on separate metal layers for increased performance are disclosed. In one aspect, an SRAM bit cell is disclosed employing a write wordline in a second metal layer, a first read wordline in a third metal layer, and a second read wordline in a fourth metal layer. Employing wordlines in separate metal layers allows wordlines to have increased widths, which decrease wordline resistance, decrease access time, and increase performance of the SRAM bit cell. To employ wordlines in separate metal layers, multiple tracks in a first metal layer are employed. To couple read wordlines to the tracks to communicate with SRAM bit cell transistors, landing pads are disposed on corresponding tracks disposed in the first metal layer. Landing pads corresponding to the write wordline are placed on corresponding tracks disposed in the first metal layer.

Abstract: A dual-port static random access memory (SRAM) cell includes first through third power lines, a storage unit connected to the first through third power lines, a first port having first and second pass-gate transistors controlled by a first wordline, a second port having third and fourth pass-gate transistors controlled by a second wordline, and first through fourth bitlines coupled to the storage unit through the first through fourth pass-gate transistors, respectively. The first through fourth bitlines and the first through third power lines each extend in a first direction and are formed of a first metal layer. The first wordline extends in a second direction substantially perpendicular to the first direction and is formed of a second metal layer above the first metal layer. The second wordline extends in the second direction and is formed of a upper-level metal layer above the second metal layer.

Abstract: There is provided a memory unit that comprises a plurality of memory cell groups, each memory cell group comprising a plurality of memory cells that are each operatively connected to a first local bit line and a second local bit line by respective first and second access transistors, and each memory cell being associated with a word line configured to control the first and second access transistors of the memory cell. The first and second local bit lines of each memory cell group being operatively connected to respective first and second column bit lines by respective first and second group access switches, the first group access switch being configured to be controlled by the second column bit line, and the second group access switch being configured to be controlled by the first column bit line.

Abstract: An external storage device includes a memory, a controller, a first interface, a second interface, a first switching module, and a second switching module. The controller is coupled to the memory. The first interface is used to connect to a first electronic device. The second interface used to connect to a second electronic device. The first switching module is coupled to the controller, the first interface, and the second interface. The second switching module is coupled to the controller, the first interface, the second interface, and the first switching module. When the first interface is electrically connected to a first electronic device and the second interface is electrically connected to the second electronic device, the first electronic device charges the controller and the second electronic device through the first switching module, and the first electronic device accesses the memory through the second switching module and the controller.

Abstract: In a semiconductor device in accordance with one embodiment, a memory access control unit counts the number of addresses accessed by burst access to each address included in an address set of an external memory that is going to be accessed. When the number of addresses is larger than a reference value, the memory access control unit performs burst access to the address, and when the number of addresses is smaller than the reference value, the memory access control unit performs random access to the address.

Abstract: A three dimensional dual-port bit cell generally comprises a first portion disposed on a first tier, wherein the first portion includes a plurality of port elements. The dual-port bit cell also includes a second portion disposed on a second tier that is vertically stacked with respect to the first tier using at least one via, wherein the second portion includes a latch.

Abstract: A dual-port SRAM timing control circuit, with three NMOS transistors connected in series respectively between ground and nodes of the two bit lines to which the cell structure corresponds. The gates of the NMOS transistors are connected to a corresponding wordline, a pulse signal and a timing control signal, respectively. The each pulse signals are formed by a corresponding clock signal inputted into a first pulse generator, respectively. An address signal, after passing through an address latch, is inputted into an address comparator for comparison, with the address comparison result outputted to a timing control signal generator; and the pulse signal, after undergoing an AND operation, is inputted into the timing control signal generator, with a timing control signal outputted.

Abstract: A pipeline system includes input buffers, a relay for controlling withdrawal of data stored in the input buffers, and functional blocks for performing one or more processing operations. A method of operating a pipeline system includes withdrawing data from one of input buffers and performing different one or more processing operations.

Abstract: In some embodiments, a time division multiplexing (TDM) circuit is configured to receive an external clock signal and generate an internal clock signal that has at least one pulse during a clock cycle of the external clock signal. An address selector is configured to select a current address before a first time within one of the at least one pulse, and select a next address starting from the first time to generate a selected address. An address storage element is configured to receive the selected address from the address selector and provide a passed through or stored address. The provided address is the current address substantially throughout the one of the at least one pulse. A single-port (SP) memory is configured to access at least one SP memory cell at the address provided by the address storage element in response to the internal clock signal.

Abstract: In general, a test instrument includes a processing system programmed to control operation of the test instrument, including communication with a control system, and programmed to run one or more test programs to test a device interfaced to the test instrument, the processing system including multiple processing devices, and a configurable interface, through which communications are exchanged with the device interfaced to the test instrument, the configurable interface including physical ports, to which different configurations are assignable.

Abstract: A circuit for mitigating write disturbance including a first and a second discharge control paths is provided and applied to the dual-port SRAM. The first discharge control path is connected to bit lines of the second port and the first port, and a first control line. The second discharge control path is connected to inverse bit lines of the second port and the first port, and the first control line. A first discharge current is generated when the bit line of the second and the first ports are respectively at a high level voltage, and a low level voltage, and the first control line operates. A second discharge current is generated when the inverse bit line of the second and the first ports are respectively at the high level voltage and the low level voltage, and the first control line operates.

Abstract: An apparatus includes an array of bit cells that include a first row of bit cells and a second row of bit cells. The apparatus also includes a first global read word line configured to be selectively coupled to the first row of bit cells and to the second row of bit cells. The apparatus further includes a second global read word line configured to be selectively coupled to the first row of bit cells and to the second row of bit cells. The apparatus also includes a global write word line configured to be selectively coupled to the first row of bit cells and to the second row of bit cells. The first global read word line, the second global read word line, and the global write word line are located in a common metal layer.

Abstract: A method of operation of a non-volatile memory packaging system includes: addressing an integrated circuit package having a system interface; accessing a module controller, in the integrated circuit package, through system interface; accessing a random access memory, in the integrated circuit package, by the module controller for storing data from the system interface; writing to a non-volatile memory, in the integrated circuit package by the module controller, with the data from the random access memory; and monitoring an address look-up register, by the module controller, for reading the data from the non-volatile memory or the random access memory through the system interface.

Abstract: A circuit comprises a control circuit having an output node. The circuit also comprises a half latch keeper circuit coupled to the control circuit. The half latch keeper circuit is configured to control the output node during a standby mode. The circuit also comprises a transistor coupled to the output node. The control circuit is configured to turn off the transistor during the standby mode.

Abstract: A memory includes a plurality of memory cells. A first line is over the plurality of memory cells. The first line in a first layout section includes a first metal layer and a second metal layer. The second metal layer is over the first metal layer. A second line is over the plurality of memory cells. The second line in the first layout section includes the first metal layer and a third metal layer. The third metal layer is over the second metal layer The first line is electrically isolated from the second line. The first line and the second line extend in a same direction.

Abstract: A multi-port SRAM module includes a cell array comprising a plurality of cells, each having a first port and a second port; a first word line which is coupled to a plurality of cells of a target row to open and close the first port; a second word line which is coupled to the cells of the target row to open and close the second port; and a switch, which is coupled to the first word line and the second word line and couples the second word line to a reference voltage level according to a voltage level of the first word line.

Abstract: Systems and methods for writing data to a data storage structure are provided. A data storage structure includes an array of storage locations. A plurality of write ports are configured to write a number of elements to the array simultaneously. The array of storage locations is arranged logically into N groups. Each group of the N groups is associated with a single multiplexer of a plurality of multiplexers. The single multiplexer is configured to receive inputs from the plurality of write ports and to select a single input to be written to a storage location of the associated group.

Abstract: A write block read apparatus for a memory device includes a dynamic read address decoder that receives static read address bits as inputs thereto and having an output used to implement a read operation of a memory location corresponding to the read address bits; a dynamic write address decoder that receives static write address bits as inputs thereto and having an output used to implement a write operation of a memory location corresponding to the write address bits; and a static write address decoder, configured in parallel with the dynamic write address decoder, the static write address decoder configured to receive a portion of the static write address bits as inputs thereto, and wherein the static write address decoder is coupled to the dynamic read address decoder so as to block the read operation upon an address conflict with the write operation.

Abstract: A method of implementing a write block read function for a memory device includes configuring a dynamic read address decoder to receive static read address bits as inputs thereto and to generate an output used to implement a read operation of a memory location corresponding to the read address bits; configuring a dynamic write address decoder to receive static write address bits as inputs thereto and to generate an output used to implement a write operation of a memory location corresponding to the write address bits; and configuring a static write address decoder, in parallel with the dynamic write address decoder, to receive a portion of the static write address bits as inputs thereto, and coupling the static write address decoder to the dynamic read address decoder so as to block the read operation upon an address conflict with the write operation.

Abstract: A memory system having increased throughput is disclosed. Specifically, the memory system includes a first level write combining queue that reduces the number of data transfers between a level one cache and a level two cache. In addition, a second level write merging buffer can further reduce the number of data transfers within the memory system. The first level write combining queue receives data from the level one cache. The second level write merging buffer receives data from the first level write combining queue. The level two cache receives data from both the first level write combining queue and the second level write merging buffer. Specifically, the first level write combining queue combines multiple store transactions from the load store units to associated addresses. In addition, the second level write merging buffer merges data from the first level write combining queue.

Abstract: The disclosure provides an asynchronous FIFO circuit that includes a data memory which is coupled to a write data path and a read data path. The data memory receives a write clock and a read clock. A FIFO write pointer counter receives a write enable signal and the write clock. The FIFO write pointer counter provides a FIFO write pointer signal to the data memory. A FIFO read pointer counter receives a read enable signal and the read clock. The FIFO read pointer counter provides a FIFO read pointer signal to the data memory. A control circuit receives the write enable signal, the read enable signal, the FIFO write pointer signal, the FIFO read pointer signal, the write clock and the read clock. The control circuit generates a memory full signal when the data memory is full and a memory empty signal when the data memory is empty.

Abstract: An exemplary signal collection system includes a signal transmitting module and a computer. The signal transmitting module outputs a high-speed signal with a high frequency. The signal collection system further includes a data collection module interconnecting the signal transmitting module and the computer. The data collection module includes a frequency reduction unit. The frequency reduction unit reduces the frequency of the high-speed signal output from the signal transmitting module and outputs the high-speed signal with a reduced frequency to the computer. A signal collection method based upon the signal collection system is also disclosed.

Abstract: A memory content access interface may include, but is not limited to: a read-path memory partition; a write-path memory partition; and a memory access controller configured to regulate access to at least one of the read-path memory partition and the write-path memory partition by an external controller.

Abstract: A processor instruction scheduler comprising an optimization engine which uses an optimization model for a processor architecture with: means to generate an optimization model for the optimization engine from a design of a processor and data representing optimization goals and constraints and a code stream, wherein the processor has at least two execution pipes and at least two registers, and wherein the code stream comprises processor instructions with corresponding register selections; and reordering means to generate an optimized code stream from the code stream with the optimal solution provided by the optimization engine for the optimization model by reordering the code stream, such that optimum values for the optimization goals under the given constraints are achieved without affecting the operation results of the code stream.

Abstract: A method includes generating a first and a second internal clock signal from a clock signal, wherein a first internal clock signal edge of the first internal clock signal and a second internal clock signal edge of the second internal clock signal are generated from a same edge of the clock signal. A first one of the first and the second internal clock edges is used to trigger a first operation on a six-transistor (6T) Static Random Access Memory (SRAM) cell of a SRAM array. A second one of the first and the second internal clock edges is used to trigger a second operation on the 6T SRAM cell. The first and the second operations are performed on different ports of the 6T SRAM. The first and the second operations are performed within a same clock cycle of the clock signal.

Abstract: Embodiments of a register file test circuit are disclosed that may allow for determining write performance at low power supply voltages. The register file test circuit may include a decoder, a multiplexer, a frequency divider, and a control circuit. The decoder may be operable to select a register cell within a register file, and the control circuit may be operable to controllably activate the read and write paths through the selected register cell, allowing data read to be inverted and re-written back into the selected register cell.

Abstract: A memory circuit includes first and second word lines, a plurality of memory cells and a timing controller. Each memory cell includes a first access port and a second access port. The first access port is coupled to the first word line and configured to be enabled by a first word line signal on the first word line. The second access port is coupled to the second word line and configured to be enabled by a second word line signal on the second word line. The timing controller is configured to receive a timing select signal and to control a time delay between the first word line signal and the second word line signal to be different in response to different first and second states of the timing select signal.

Abstract: To include first and second data input/output terminals allocated to first and second memory circuit units, respectively, and an address terminal allocated in common to these memory circuit units. When a first chip selection signal is activated, the first memory circuit unit performs a read operation or a write operation via the first data input/output terminal based on an address signal regardless of an operation of the second memory circuit unit. When a second chip selection signal is activated, the second memory circuit unit performs a read operation or a write operation via the second data input/output terminal based on the address signal regardless of an operation of the first memory circuit unit. With this configuration, a wasteful data transfer can be prevented, and the effective data transfer rate can be increased.

Abstract: A semiconductor device avoids the disturb problem and the collision between write and read operations in a DP-SRAM cell or a 2P-SRAM cell. The semiconductor device 1 includes a write word line WLA and a read word line WLB each coupled to memory cells 3. A read operation activates the read word line WLB corresponding to the selected memory cell 3. A write operation activates the write word line WLA corresponding to the selected memory cell 3. The selected write word line WLA is activated after activation of the selected read word line WLB in an operation cycle that performs both read and write operations.

Abstract: A three dimensional dual-port bit cell generally comprises a first portion disposed on a first tier, wherein the first portion includes a plurality of port elements. The dual-port bit cell also includes a second portion disposed on a second tier that is vertically stacked with respect to the first tier using at least one via, wherein the second portion includes a latch.

Abstract: Distribution apparatuses include databases for storing data received from ECUs, and further include receiving buffers and sending buffers. The distribution apparatus continuously performs, in parallel, an operation for storing received data on the receiving buffer, operation for synchronizing contents of the database with the databases, and an operation for sending data from the sending buffer. Further, the distribution apparatus periodically copies data of the receiving buffer onto the database and data of the database onto the sending buffer.

Abstract: A multiport memory having an array of storage cells for storing data; a plurality of data access ports; and access control circuitry to assign each data access port to one of the sets of access control lines and corresponding data lines. The control circuitry has collision detection circuitry to detect a colliding data access request received at a second data access port that requests access to a row of storage cells currently being accessed by a data access request received at a first data access port. The control circuitry is responsive to the detected collision to assign the set of access control lines and corresponding data lines currently assigned to the first data access port to the second data access port and to subsequently assign the first data access port to the set of access control lines and corresponding data lines previously assigned to the second access port.

Abstract: A memory cell includes a latch having a true data node and a complement data node, a true bitline, a complement bitline, a first access transistor coupled between the true bitline and the true data node, and a second access transistor coupled between the complement bitline and the complement data node. A wordline driver circuit includes a true wordline coupled to control the first access transistor and a complement wordline coupled to control the second access transistor. The wordline driver generates control signals on the true and complement wordlines to access the memory cell by: actuating the first access transistor while the second access transistor is not actuated and then actuating the second access transistor while the first access transistor is not actuated. The bitlines and wordlines are supplied from different sets of power supply voltages, with the bitline high supply voltage being less than the wordline high supply voltage.

Abstract: A memory may include first to Nth cell arrays configured to include a plurality of memory cells and one or more first to Nth data input/output pads respectively corresponding to the first to Nth cell arrays, wherein the one or more first to Nth data input/output pads are configured to input/output data to/from the first to Nth cell arrays.

Abstract: A system includes a memory block. The memory block includes a local control circuit that is operable to control a memory operation of the memory block. The local control circuit includes a local sense amplifier. The system also includes a global memory control circuit separate from the memory block, and the global memory control circuit is operable to communicate with the local control circuit. The global memory control circuit includes a global sense amplifier operable to receive a sensed data state from the local sense amplifier.

Abstract: Described herein are memory apparatuses, and methods of operating the same, that have a memory array module configured, in a given clock cycle, to either receive a first command to write to a first memory location having a first address, or receive a second command to read from a second memory location having a second address. A comparison circuit of the memory apparatus is configured to compare the first address to the second address. The memory apparatus also includes an output circuit configured to output data stored in the memory array module at the second memory location based at least on the first address and second address being different. The output circuit is also configured to output data received from a write data input, bypassing the memory array module, when the first address and the second address are the same.

Abstract: An adaptive equalizer capable of suppressing an increase in circuit scale and an increase in operation clock frequency. An adaptive equalizer (100) performs an adaptive equalization process on a time-region signal in a frequency region. A signal converter (200) has: a first wide-bit memory (201) capable of reading/writing a plurality of sample signals; a first register group (202) comprising a plurality of registers capable of accessing the first wide-bit memory (201); a butterfly computation unit group (204) comprising a plurality of butterfly computation units; and a first connection switching unit (203) for switching the state of connection between the plurality of registers and the plurality of butterfly computation units.

Abstract: Systems and methods for detecting and suppressing crowbar currents in memory arrays. A dummy read is implemented to prevent crowbar currents in the case of simultaneous read-write collisions in a static random access memory (SRAM) array having cross-coupled bitline keepers. When a simultaneous read and write operation to a first entry of the memory array is detected, the read operation to the first entry is suppressed and a dummy read operation to a second entry of the memory array is performed. The write operation to the first entry is allowed to proceed undisturbed.

Abstract: A memory die for use in a multi-die stack having at least one other die. The memory die includes a plurality of contacts arranged in a field and configured to interface to the other dies of the multi-die stack. A first subset of the buffer lines of a number of buffer lines are connected to respective contacts in the field. The memory die also includes a number of buffers and cross-bar lines. The buffers are coupled between respective signal lines and respective buffer lines. The cross-bar lines interconnect respective pairs of buffer lines in a second subset of the buffer lines that is distinct from the first subset of the buffer lines.

Abstract: The present disclosure describes techniques and apparatuses for multiport memory architecture. In some aspects serial data is received from a data port and converted to n-bit-wide words of data. The n-bit-wide words of data are then buffered as a k-word-long block of parallel data into a line of a multiline buffer as a block of k*n bits of data. The block of k*n bits of data is then transmitted to a multiport memory via a write bus effective to write the block of k*n bits of data to the multiport memory.

Abstract: A memory device operable to provide multi-port functionality, which may comprise a single-port memory having a first operating frequency that is at least twice of a second operation frequency of a multi-port memory, a read synchronization module that synchronizes a set of read signals from the second operation frequency to the first operating frequency, a write synchronization module that synchronizes a set of write signals from the second operation frequency to the first operating frequency, a read/write signal selector that integrates a set of synchronized read signals and a set of synchronized write signals into a set of input control signals of the single-port memory, and a read out data synchronization module configured to synchronize a set of read out data from the single-port memory with the second operation frequency of the multi-port memory.

Abstract: A novel and useful SRAM restore tracking circuit adapted to improve the tracking of SRAM cell behavior for different PVT corners. The SRAM array access path is mainly influenced by two stages: (1) the wordline (WL) delay and (2) the SRAM cell delay. These two stages are usually the most sensitive for process variation in the memory access path. The restore tracking circuit incorporates two novel topologies for enhanced tracking to SRAM cell behavior. The first topology is a circuit that functions to mimic the wordline load and delay characteristics. The WL stage is very sensitive to process variation due to the large load it must drive and the usually relatively poor slope (i.e. depending on the number of cells the WL). The second topology is a circuit that mimics the SRAM cell load and delay characteristics. The SRAM cell is very sensitive to process variation due to its very small device features and the high number of cells in the memory array.

Abstract: A system, method, and computer program product are provided for implementing a storage array. In use, a storage array is implemented utilizing static random-access memory (SRAM). Additionally, the storage array is utilized in a multithreaded architecture.

Abstract: A computer-implemented method of accessing data comprises resetting the value of a register of a first processing core of a multi-core processor, copying the bits of a compressed pointer into the lowest order bits of the register, left shifting the register a predetermined number of bits, and executing on the first processing core a first instruction referencing memory at a virtual address specified by the register.

Abstract: A semiconductor memory having a memory cell structure capable of reducing soft error without complicating a circuit configuration. Specifically, an inverter (I1) consists of a NMOS transistor (N1) and a PMOS transistor (P1), and an inverter (I2) consists of a NMOS transistor (N2) and a PMOS transistor (P2). The inverters (I1, I2) are subjected to cross section. The NMOS transistor (N1) is formed within a P well region (PW0), and the NMOS transistor (N2) is formed within a P well region (PW1). The P well regions (PW0, PW1) are oppositely disposed with an N well region (NW) interposed therebetween.