Abstract: Among other things, one or more techniques or systems for facilitating access operations to a single port memory device are provided. Multiple access operations to a single port memory device, such as a 6 transistor bitcell array of an SPSRAM, are performed during a single clock period of a system clock. In an embodiment, a wrapper controller initiates a first access operation during a first clock period of the system clock based upon a rising edge of the system clock. Responsive to receiving an operation complete signal during the first clock operation, the wrapper controller initiates a second access operation to the single port memory device during the first clock period. In this way, multi-port access functionality is implemented, such as in a serial manner to mitigate operation disturbs, for a single port memory device that occupies a relatively smaller area than a multi-port memory device for improved storage density.

Abstract: An apparatus and method for transmitting and receiving control data and user data between multiple communication stations using multiple backhaul links in a communication system, in which a Multi-Link Relay Station (MLRS) generates multiple backhaul links for data transmission/reception between multiple communication stations, and provides a multi-homing service for mobile stations using the generated multiple backhaul links. The MLRS may also support a handover for mobile stations using the multiple backhaul links. The use of multiple backhaul links facilitates efficient transmission/reception of control data and/or user data between multiple base stations or multiple relay stations.

Abstract: A circuit arrangement for organic light-emitting diodes can be arranged in a two-dimensional matrix. It can in particular be used with microdisplays. It can allow a wide influencing of the brightness of the electromagnetic radiation emitted by the organic light-emitting diodes. Every organic light-emitting diode can be controlled by means of a storage circuit, a sense amplifier and a driver circuit using the circuit arrangement. The driver circuit can be formed by at least three transistors connected in series and a further output transistor whose drain is connected to the anode of the respective organic light-emitting diode. In this respect, the transistor acting as the driver can have a constant electric operating voltage LVDD applied at its source and a further likewise constant electric operating voltage Vdrive is applied to its gate.

Abstract: An SRAM cell structure. In one embodiment, a bit cell first level contacts formed at a first and a second CVdd node, a first and a second CVss node, at a bit line node, at a bit line bar node, at a data node and at a data bar node; and second level contacts formed on each of the first level contacts at the first and second CVdd nodes, the first and second CVss nodes, the bit line node and the bit line bar node; wherein the first level contacts formed at the data node and the data bar node do not have a second level contact formed thereon. In another embodiment, a word line is formed and bit lines and a CVdd and a CVss line are formed overlying the SRAM cell and coupled to the corresponding ones of the nodes. Methods are disclosed for forming the cell structure.

Abstract: Among other things, one or more techniques or systems for facilitating access operations to a single port memory device are provided. Multiple access operations to a single port memory device, such as a 6 transistor bitcell array of an SPSRAM, are performed during a single clock period of a system clock. In an embodiment, a wrapper controller initiates a first access operation during a first clock period of the system clock based upon a rising edge of the system clock. Responsive to receiving an operation complete signal during the first clock operation, the wrapper controller initiates a second access operation to the single port memory device during the first clock period. In this way, multi-port access functionality is implemented, such as in a serial manner to mitigate operation disturbs, for a single port memory device that occupies a relatively smaller area than a multi-port memory device for improved storage density.

Abstract: A signal control device includes: a dual port RAM from or to which data signals are read and written at predetermined operation timings by first and second CPUs connected to two ports, respectively; an address collision detection unit detecting collision between addresses in which the first and second CPUs respectively read and write the data signal from and to the dual port RAM; a first storage unit storing the data signal read by the first CPU; a second storage unit storing the data signal read from the address in which the second CPU writes the data signal to the dual port RAM when the collision between the addresses is detected; and a switching unit switching a reading source outputting the data signal to the port to which the first CPU is connected and outputting the read data signal to the first CPU entering a readable state.

Abstract: Embodiments disclosed herein include methods and apparatuses for pre-charging bitlines in a static random access memory (SRAM) prior to data access for reducing leakage power. The memory access logic circuit receives a memory access request comprising a data entry address to be accessed in a first data access path of a SRAM data array of the SRAM. The SRAM also includes a pre-charge circuit provided in a second data access path outside the first data access path. The pre-charge circuit is configured to enable pre-charging of the SRAM data array as part of the memory access request to avoid pre-charging bitlines in the SRAM data array during idle periods to reduce leakage power. The pre-charge circuit can enable pre-charging of the SRAM data array prior to data access such that the pre-charge circuit does not add latency to the first data access path.

Abstract: A volatile memory includes volatile memory cells in which data write and read operations are performed. The memory cells are arranged in rows and in columns and are distributed in first separate groups of memory cells for each column. The memory includes, for each column, a write bit line dedicated to write operations and connected to all the memory cells of the column and read bit lines dedicated to read operations. Each read bit line is connected to all the memory cells of one of the first groups of memory cells. Each memory cell in the column is connected to a single one of the read bit lines.

Abstract: An integrated circuit that includes an array of memory cells. The integrated circuit also includes a write address row decoder having a plurality of write row outputs and a write address column decoder having a plurality of write column outputs. A write logic array is electrically connected to the write row outputs and the write column outputs and has a separate write word line (WWL) output electrically connected to each cell in the array of memory cells.

Abstract: A memory system includes a multi-port memory having a first port and a second port. First registers and second registers provide first and second addresses, respectively, to the first and second ports. An access controller controls the multi-port memory to launch an access for the valid address provided by the first input registers in response to the first edge of the master clock unless an immediately preceding first edge of the master clock has occurred more recently than the most recent occurrence of the first edge of the first clock and to launch an access for the valid address provided by the second input registers in response to the first edge of the master clock unless an immediately preceding first edge of the master clock has occurred more recently than the most recent occurrence of the first edge of the second clock.

Abstract: A multiport bitcell including a pair of cross-coupled inverters is provided with increased write speed and enhanced operating voltage range by the selective isolation of a first one of the cross-coupled inverters from a power supply and ground during a write operation. The write operation occurs through a write port that includes a transmission gate configured to couple a first node driven by the first cross-coupled inverter to a write bit line. A remaining second cross-coupled inverter in the bitcell is configured to drive a second node that couples to a plurality of read ports.

Abstract: A write circuit in a memory array includes a global data line, a switching circuit, and a first local data line coupled with the switching circuit and with a first plurality of memory cells. The global data line is configured to receive data to be written to the memory cell from outside of the memory array. The switching circuit is configured to electrically couple the global data line with the first local data line to transfer the data to be written to a memory cell of the first plurality of memory cells to the first local data line. The memory cell of the first plurality of memory cells is configured to receive data on the first local data line.

Abstract: In one embodiment, a memory includes a plurality of bit lines and a write driver for driving a driven bit line selected from the plurality of bit lines during a write operation. The write driver is coupled to an internal node. A first stage clamping circuit is operable to clamp the internal node to a clamping voltage if the write operation is not enabled and is further operable to unclamp the internal node during the write operation. The memory further includes a multiplexer for selectively coupling the driven bit line to the internal node. A second stage clamping circuit is operable to clamp the plurality of bit lines to a clamping voltage if the write operation is not enabled and is further operable to unclamp the driven bit line during the write operation.

Abstract: An 8T memory bit cell receives a clock signal and read and write address signals. A read address latch/clock circuit receives the clock signal and the read address signals and initiates a read operation during a first clock cycle state. A write address flip-flop/clock circuit receives the clock signal and the write address signals and initiates a write operation during a second clock cycle state. An inverter receives and inverts the clock signal and applies the inverted clock signal to the write address flip-flop/clock circuit. The read address latch/clock circuit initiates a read word line precharge operation during the second clock cycle state and a write word line precharge operation during the first clock cycle state. The write address flip-flop/clock circuit may also include a loose self-timer to end a write cycle is a clock signal continues beyond a predetermined time.

Abstract: To provide a signal processing circuit including a nonvolatile memory circuit with a novel structure, the signal processing circuit includes an arithmetic portion, a memory, and a control portion for controlling the arithmetic portion and the memory. The control portion includes a set of a volatile memory circuit and a first nonvolatile memory circuit for storing data held in the volatile memory circuit, the memory includes a plurality of second nonvolatile memory circuits, and the first nonvolatile memory circuit and the second nonvolatile memory circuit each include a transistor having a channel in an oxide semiconductor layer and a capacitor in which one of a pair of electrodes is electrically connected to a node which is set in a floating state when the transistor is turned off.

Abstract: A data reading method of a magnetic memory device includes generating read commands, supplying a read current to a selected magnetic memory element in a first direction and in turn in a second direction under different ones of the read commands, respectively, and sensing the magnitude of the read current flowing through the selected magnetic memory element to read data stored at the selected magnetic memory element.

Abstract: A secondary memory unit includes a first substrate that has a non-volatile memory unit mounted thereon that is configured to receive power from an external power supply. A second substrate has an energy storage and supply medium mounted thereon. An energy transfer medium is provided that electrically connects the first substrate and the second substrate. The energy storage and supply medium is configured to supply an operating power to the non-volatile memory unit when power from the external power supply to the non-volatile memory unit is cut off.

Abstract: The present disclosure provides a static random access memory (SRAM) cell. The SRAM cell includes a first and a second pull-up devices; a first and a second pull-down devices configured with the first and second pull-up devices to form two cross-coupled inverters for data storage; and a first and second pass-gate devices configured with the two cross-coupled inverters to form a port for data access, wherein the first and second pull-down devices each includes a first channel doping feature of a first doping concentration, and the first and second pass-gate devices each includes a second channel doping feature of a second doping concentration greater than the first doping concentration.

Abstract: A method for providing a SRAM cell having a dedicated read port separated from a write port includes providing a first and a second bit-line placed in parallel forming a complementary bit-line pair for the dedicated read port, and providing a third and a fourth bit-line placed in parallel forming a complementary bit-line pair for the write port. The method further includes providing a positive voltage supply line disposed between a first and a second ground line placed in parallel, providing a first and a second metal line adjacently flanking and in parallel to the first bit-line, and providing a third and a fourth metal line adjacently flanking and in parallel to the second bit-line to provide a new SRAM cell structure having a balanced read and write operation speed and an improved noise margin.

Abstract: A memory cell is provided. The memory cell comprises a write port and a read port. The write port comprises a pair of cross-coupled inverters and a plurality of metal lines. The first inverter comprises a first pull-up device and a first pull-down device. The second inverter comprises a second pull-up device and a second pull-down device. The metal lines comprise a Vcc conductor line, a first Vss conductor line, and a second Vss conductor line. The first pull-down device has a source terminal coupled to the first Vss line. The second pull-down device has a source terminal coupled to the second Vss line. The read port comprises a cascaded device, a read word line, read bit line and a third Vss conductor line. The cascaded device comprises a read pull-down device and a read pass device. The read pull-down device has a source terminal coupled to the third Vss conductor line. The read pass device has a drain terminal coupled to the read bit line.

Abstract: A memory device can include a memory array configured to store a first plurality of bits and a second plurality of bits. The memory device may include an address port configured to receive at least a portion of a first address associated with a first command during a first clock cycle, and at least a portion of a second address associated with a second command during the first clock cycle. The memory device may include a plurality of data ports that includes a first data port configured to access the first plurality of bits in response to the receiving of the at least a portion of the first address during the first clock cycle, and a second data port configured to access the second plurality of bits in response to the receiving of the at least a portion of the second address during the first clock cycle.

Abstract: A storage device provides single-port read multiple-port write functionality and includes first and second memory arrays and a controller. The first memory array includes first and second single-port memory cells. The second single-port memory cell stores data in response to a memory access conflict associated with the first single-port memory cell. The second memory array stores location information associated with data stored in the first and second single-port memory cells. The controller is operatively coupled to the first and second memory arrays, and resolves the memory access conflict by determining locations to store data in the first and second single-port memory cells to thereby avoid a collision between concurrent memory accesses to the first single-port memory cell in response to the memory access conflict. The controller determines locations to store data in the first and second single-port memory cells based on the location information.

Abstract: A multi-port memory cell is disclosed that includes first and second cross-coupled inverter circuits. The input node of each inverter circuit is coupled to the output node of the other inverter circuit to receive the inverted output of the other inverter circuit. The multi-port memory cell includes a first pair of access transistors of a first type, each coupled to the input node of a respective one of the first and second inverter circuits. The multi-port memory cell also includes a second pair of access transistors of the second type, each coupled to the input of a respective one of the first and second inverter circuits. The multi-port cell exhibits advantages in layout compactness and SEU tolerance.

Abstract: A semiconductor memory apparatus includes a shared pad which is configured to output a read operation control signal in a read operation and receive a write operation control signal in a write operation.

Abstract: Static random access memory (SRAM) circuits are used in most digital integrated circuits to store data. To handle multiple memory users, an efficient dual port six transistor (6T) SRAM memory cell is proposed. The dual port 6T SRAM cell uses independent word lines and bit lines such that the true side and the false side of the SRAM cell may be accessed independently. Single-ended reads allow the two independent word lines and bit lines to handle two reads in a single cycle using spatial domain multiplexing. Writes can be handled faster that read operations such that two writes can be handled in a single cycle using time division multiplexing. To further improve the operation of the dual port 6T SRAM cell a number of algorithmic techniques are used to improve the operation of the memory system.

Abstract: Described are memory modules that support dynamic point-to-point extensibility using fixed-width memory die. The memory modules include data-width translators that allow the modules to vary the effective width of their external memory interfaces without varying the width of the internal memory interfaces extending between the translators and associated fixed-width dies. The data-width translators use a data-mask signal to selectively prevent memory accesses to subsets of physical addresses. This data masking divides the physical address locations into two or more temporal subsets of the physical address locations, effectively increasing the number of uniquely addressable locations in a given module. Reading temporal addresses in write order can introduce undesirable read latency. Some embodiments reorder read data to reduce this latency.

Abstract: A 10-transistor dual-port SRAM with shared bit-line architecture includes a first memory cell and a second memory cell. The first memory cell has a first storage unit, a first switch set, and a second switch set. The second memory cell has a second storage unit, a third switch set, and a fourth switch set. The second switch set is coupled to a complement first A-port bit line and a complement first B-port bit line, and connected to the first storage unit. The third switch set is connected to a complement second A-port bit line, a complement second B-port bit line, and the second storage unit. Thus, the second memory cell can make use of the third switch set to share the complement first A-port bit line and the complement first B-port bit line with the first memory cell.

Abstract: A memory macro comprises a plurality of memory array segments, each having a predetermined number of data inputs and outputs. A segment decoder circuit is configured to: receive a first value indicating a number of memory partitions among which the memory array segments are to be divided, and output a plurality of signals for selectively activating one or more of the plurality of memory array segments to be accessed based on the first value. A plurality of output drivers are coupled to the segment decoder circuit and to respective ones of the outputs. The plurality of output drivers are configured to selectively output data from the respective outputs of each of the respective activated memory array segments.

Abstract: A memory cell and array and a method of forming a memory cell and array are described. A memory cell includes first and second pull-up transistors, first and second pull-down transistors, first and second pass-gate transistors, and first and second isolation transistors. Drains of the first pull-up and first pull-down transistors are electrically coupled together at a first node. Drains of the second pull-up and second pull-down transistors are electrically coupled together at a second node. Gates of the second pull-up and second pull-down transistors are electrically coupled to the first node, and gates of the first pull-up and first pull-down transistors are electrically coupled to the second node. The first and second pass-gate transistors are electrically coupled to the first and second nodes, respectively. The first and second isolation transistors are electrically coupled to the first and second nodes, respectively.

Abstract: A plurality of address conversion circuits are provided for memory cores respectively, and convert logical address data supplied from outside to physical address data. In an interleave operation, the address conversion circuits output the logical address data as the physical address data without converting the logical address data when a first memory core is to be accessed earlier than a second memory core, whereas output address data obtained by adding a certain value to the logical address data as the physical address data when the second memory core is to be accessed earlier than the first memory core.

Abstract: An integrated circuit with SRAM cells containing dual passgate transistors and a read buffer, all connected to one word line is disclosed. The read buffer and one passgate transistor may be variously configured to a separate read data line and write data line, or a combined data line, in different embodiments. The read buffer in addressed SRAM cells may be biased during read operations. The read buffer in half-addressed SRAM cells may be biased or floated, depending on the configuration of the read data line and the write data line. The read buffer in addressed and half-addressed SRAM cells may be biased or floated, depending on the configuration of the read data line and the write data line.

Abstract: A semiconductor device enabling expansion of a noise margin. For example, in a memory area in which each memory cell MC is coupled to a word line WLA for a first port and a word line WLB for a second port, and a plurality of memory cells MC are disposed in a matrix shape, each word line is disposed in the order of WLA0, WLB0, WLB1, WLA1, WLA2. Further, a pitch d2 between WLA-WLA and between WLB-WLB is made smaller than a pitch d1 between WLA-WLB. As such, the word lines of an identical port are disposed at the pitch d2 on one of both sides of a certain word line and the word lines of different ports are disposed at the pitch d1 on the other.

Abstract: A repairable multi-layer memory chip stack wherein each of the memory chips of the chip stack includes a control unit, a decoding unit, a memory array module and a redundant repair unit comprising at least one redundant repair element. The decoding unit receives a memory address from an address bus, and correspondingly outputs a decoded address. The memory array module determines whether to allow a data bus to access the data of the memory array module corresponding to a decoded address in accordance with an activation signal of the control unit. The redundant repair element includes a valid field, a chip ID field, a faulty address field and a redundant memory. When the valid field is valid, the value of the chip ID field matches the ID code, and the value of the faulty address field matches the decoded address, the redundant memory is coupled to the data bus.

Abstract: A device and a method for controlling an SRAM-type device, including: a bistable circuit and two switching circuits respectively connecting two access terminals of the bistable circuit to two complementary bit lines in a first direction, each switching circuit including a first switch and a second switch in series between one of the bit lines and one of the access terminals, the control terminal of the second switch being connected to a word control line in the first direction; and a third switch between the midpoint of the series connection and a terminal of application of a reference potential, a control terminal of the third switch being connected to the other one of the access terminals.

Abstract: A multi-port memory may be formed from a plurality of “simpler” memories. In one implementation, the memory includes a write port and a number of memories provided in groups, such that the write port supplies each of a plurality of copies of the data unit to a subset of the memories, each of the subset of memories being provided in a corresponding one of the groups, a number of the copies of the data unit being greater than two. Multiplexers may be implemented, each of which being associated with a corresponding one of the groups of the memories. One of the plurality of multiplexers may be configured to selectively supply one of the copies of the data unit from one of the memories. A read port may receive the one of the copies of the data unit from the one of the multiplexers and output the one of the copies of the data unit.

Abstract: A memory cluster includes a first block, a second block, a third block, and a fourth block arranged to have a center hole, wherein the first, second, third, and fourth blocks are each have a first port, a second port, a third port, and a fourth port. A first core is in the center hole coupled to the first port of each of the first, second, third, and fourth blocks. A second core is in the center hole coupled to the second port of each of the first, second, third, and fourth blocks. A third core is in the center hole coupled to the third port of each of the first, second, third, and fourth blocks. A fourth core in the center hole coupled to the fourth port of each of the first, second, third, and fourth blocks.

Abstract: A memory includes a determination circuit, a plurality of refresh counters, and a plurality of banks. The determination circuit receives a refresh command. The plurality of refresh counters are coupled to the determination circuit. Each refresh counter of the plurality of refresh counters corresponds to one bank of the plurality of banks. The determination circuit detects whether a first bank of the plurality of banks is enabled or a number counted by a first refresh counter of the plurality of refresh counters corresponding to the first bank is equal to a predetermined value. Then, the determination circuit optionally refreshes one bank of the plurality of banks according to a detection result. Thus, the memory still refreshes an idle bank according to a refresh command even if the plurality of banks are not all idle.

Abstract: A memory device can include a random access memory array configured to store data values; a plurality of bi-directional ports, configured to transfer data values into and out of the memory device on rising and falling transitions of at least one access clock signal; and at least one address bus configured to receive at least a portion of address values to random access locations on rising and falling transitions a timing clock signal having the same frequency as the access clock signal.

Abstract: A method of operating a multiport memory, which has first and second sets of word lines and bit lines for accessing a memory array, uses a first port and a second port for accesses during a first phase of a master clock and a third port and a fourth port during a second phase of the master clock. Each port has its own port clock, which clocks their own row and column addresses, that is no faster than the master clock. Assuming there is demand for it, four accesses occur for each cycle of the master clock. This has the effect of being able to be sure that a given access is complete within two cycles of the port clocks and can be operated at the rate of one access per cycle of the port clock.

Abstract: A memory system may provide for a successful write of a multi-port memory cell (e.g., dual-port 2WR SRAM cell) when it is simultaneously accessed by more than one port. This multi-port memory cell may include at least two independent accesses to the memory cell, where each access may be controlled by an independent wordline signal. Each port may have an independent pair of bitlines. Multiple write circuitry (e.g., double write circuitry) may enable the write driver to drive the input data to more than one pair of bitlines simultaneously.

Abstract: Integrated circuit memory devices include an array of static random access memory (SRAM) cells arranged as a plurality of columns of SRAM cells electrically coupled to corresponding plurality of pairs of bit lines and a plurality of rows of SRAM cells electrically coupled to a corresponding plurality of word lines. A word line driver and a column decoder are provided. The word line driver, which is electrically coupled to the plurality of word lines, is configured to drive a selected word line with a positive voltage and a plurality of unselected word lines with a negative voltage during an operation to write data into a selected one of the SRAM cells. The column decoder includes a plurality of pairs of selection switches therein, which are electrically coupled to corresponding ones of the plurality of pairs of bit lines.

Abstract: A memory macro comprises a plurality of memory array segments, each having a predetermined number of data inputs and outputs. A segment decoder circuit is configured to: receive a first value indicating a number of memory partitions among which the memory array segments are to be divided, and output a plurality of signals for selectively activating one or more of the plurality of memory array segments to be accessed based on the first value. A plurality of output drivers are coupled to the segment decoder circuit and to respective ones of the outputs. The plurality of output drivers are configured to selectively output data from the respective outputs of each of the respective activated memory array segments.

Abstract: A circuit including a memory circuit, the memory circuit includes a first plurality of memory arrays and a first plurality of keepers, each keeper of the first plurality of keepers is electrically coupled with a corresponding one of the first plurality of memory arrays. The memory circuit further includes a first current limiter electrically coupled with and shared by the first plurality of keepers.

Abstract: A memory system includes a multi-port memory having a first port and a second port. First registers and second registers provide first and second addresses, respectively, to the first and second ports. An access controller controls the multi-port memory to launch an access for the valid address provided by the first input registers in response to the first edge of the master clock unless an immediately preceding first edge of the master clock has occurred more recently than the most recent occurrence of the first edge of the first clock and to launch an access for the valid address provided by the second input registers in response to the first edge of the master clock unless an immediately preceding first edge of the master clock has occurred more recently than the most recent occurrence of the first edge of the second clock.

Abstract: A static RAM includes a plurality of word lines, a plurality of global bit line pairs, a plurality of static-type memory cells, a plurality of sense amplifiers, a plurality of local bit line pairs provided in correspondence with each global bit line pair, and a plurality of global switches, wherein the plurality of static-type memory cells is connected to the corresponding local bit line pair in response to a row selection signal, and at the time of read, the row selection signal is applied to the word line and after the corresponding local bit line pair is brought into a state corresponding to contents stored in the memory cell, application of the row selection signal is stopped and then the corresponding global switch is brought into a connection state and after changing the state of the global bit line pair, the corresponding sense amplifier is operated.

Abstract: An improved multi-port register file system and method of operating. The multi-port register file memory system comprises: n single memory bit cells each storing a data value and having a single bit cell write port and a single read port connecting a respective local bit line, wherein corresponding parallel activated single bit cells output a stored data value in parallel at n read port outputs to a respective local bit line of n local bit lines, each single bit cell accessed in parallel according to a decoded read address signal. A receiver device is provided implementing n selection logic devices corresponding to n read ports, each selection logic device receiving each the n local bit line output values from the n single bit cells, and implementing logic based directly on the decoded read address signal to select a respective local bit line output as a global output bit.

Abstract: In a multiple port SRAM, a first bit cell is coupled to first and second word lines and a first and second bit line pair. A second bit cell is coupled to the first and second word lines and a third and fourth bit line pair. A first data line pair is coupled to the first bit line pair via first switching logic and to the third bit line pair via second switching logic, and a second data line pair is coupled to the second bit line pair via third switching logic and to the fourth bit line pair via fourth switching logic. If a match exists between at least portions of a first and second access address, a state of the third and forth switching logic is set such that the second bit line pair and the fourth bit line pair remains decoupled from the second data line pair.

Abstract: In a memory device, a bitline write voltage is applied to a first bitline. A wordline voltage is applied to a first wordline for writing data to a first memory cell connected to the first wordline and the first bitline. The first bitline and the second bitline are electrically connected for charge sharing between the first bitline and the second bitline. A predetermined time after electrically connecting the first bitline and the second bitline, the first and the second bitline are electrically disconnected and the bitline write voltage is applied to the second bitline. The wordline voltage is applied to a second wordline for writing data to a second memory cell connected to the second wordline and the second bitline.

Abstract: A memory cell including a cross-coupled latch with corresponding storage nodes, and further including first and second write pass gate transistors and first and second read pass gate transistors. The write pass gate transistors are controlled by a write word line and the read pass transistors are controlled by a read word line. Each read and write pass gate transistor is coupled between a storage node and either a bit line or a complementary bit line. The write pass gate transistors are implemented at a first strength level and the read pass gate transistors are implemented at a second strength level which is less than the first strength level. In this manner, the read and write margins are independently configurable without negatively impacting each other.

Abstract: In this invention a hit ahead multi-level hierarchical scalable priority encoding logic and circuits are disclosed. The advantage of hierarchical priority encoding is to improve the speed and simplify the circuit implementation and make circuit design flexible and scalable. To reduce the time of waiting for previous level priority encoding result, hit signal is generated first in each level to participate next level priority encoding, and it is called Hit Ahead Priority Encoding (HAPE) encoding. The hierarchical priority encoding can be applied to the scalable architecture among the different sub-blocks and can also be applied with in one sub-block. The priority encoding and hit are processed completely parallel without correlation, and the priority encoding, hit generation, address encoding and MUX selection of the address to next level all share same structure of circuits.