Abstract: Embodiments relate to a decoder driver circuit and a memory chip. The decoder driver circuit includes: a plurality of sub drive units configured to generate a main word line drive signal according to a power supply voltage signal, a first decoding input signal and an intermediate decoding output signal; and a plurality of decoding control circuits connected to the plurality of sub drive units, where the plurality of decoding control circuits are configured to generate the intermediate decoding output signal according to an enable control signal and a second decoding input signal. When the intermediate decoding output signal is in a first state, the main word line drive signal is in a non-drive state.

Abstract: A memory device, such as a MRAM device, includes a plurality of memory macros, where each includes an array of memory cells and a first ECC circuit configured to detect data errors in the respective memory macro. A second ECC circuit that is remote from the plurality of memory macros is communicatively coupled to each of the plurality of memory macros. The second ECC circuit is configured to receive the detected data errors from the first ECC circuits of the plurality of memory macros and correct the data errors.

Abstract: A semiconductor device includes a first conductive line on a lower structure and extending in a first horizontal direction; a second conductive line on the first conductive line and extending in a second horizontal direction, the second horizontal direction being perpendicular to the first horizontal direction; and a memory cell structure between the first conductive line and the second conductive line. The memory cell may structure include a data storage material pattern and a selector material pattern overlapping the data storage material pattern in a vertical direction. The data storage material pattern may include a phase change material layer of In?Ge?Sb?Te?. In the phase change material layer of In?Ge?Sb?Te?, a sum of ? and ? may be lower than about 30 at. %, and a sum of ? and ? may be higher than about 70 at. %.

Abstract: A display device includes: a plurality of pixels connected to gate lines and data lines; a gate driver to supply a gate signal to the gate lines; and a data driver to supply a data signal to the data lines. The gate driver includes: a first transistor including a first active layer at a first layer; and a second transistor including a second active layer at a second layer on the first layer.

Abstract: Numerous embodiments of analog neural memory systems that enable concurrent write and verify operations are disclosed. In some embodiments, concurrent operations occur among different banks of memory. In other embodiments, concurrent operations occur among different blocks of memory, where each block comprises two or more banks of memory. The embodiments substantially reduce the timing overhead for weight writing and verifying operations in analog neural memory systems.

Abstract: A semiconductor storage according to an embodiment of the present disclosure includes two power source paths, and a connection path that connects the power source paths. Each of the power source paths includes a power gate transistor and a current source transistor which are coupled in series. The connection path connects ends of the respective power source paths on a side of the current source transistor. The semiconductor storage further includes a storage element, and a switch element inserted between the connection path and the storage element. A back gate is coupled to an internal node in the current source transistor provided in a low-side path of the two power source paths.

Abstract: A display panel includes sub-pixels and a scan driving circuit. The scan driving circuit includes a plurality of stages of shift registers including at least one first shift register and at least one second shift register, and a plurality of clock signal lines including at least one first sub-clock signal line and at least one second sub-clock signal line. Each shift register includes a first sub-circuit and a second sub-circuit. A first sub-clock signal line in the at least one first sub-clock signal line is electrically connected to a first sub-circuit in a first shift register in the at least one first shift register. A second sub-clock signal line in the at least one second sub-clock signal line is electrically connected to one sub-circuit of a first sub-circuit and a second sub-circuit in a second shift register in the at least one second shift register.

Abstract: In some examples, a subword driver block of a memory device includes a first active region and a second active region adjacent to each other. The first active region forms drains/sources of a first and second transistors in a first region; the second active region forms drains/sources of a third and fourth transistors in a second region, where the first and second regions are adjacent to each other. The first, second, third and fourth transistors are coupled to a common non-active potential via a shared contact overlaid over a merged region between the first and second regions. The first and second active regions may comprise N+ diffusion materials.

Abstract: A memory device is provided that comprises: a memory cell array having a plurality of memory cells connected between a plurality of word lines and a plurality of column lines; a three-phase word line controller configured to generate a selected operating voltage, a first unselected operating voltage, and a second unselected operating voltage having a lower level than the first unselected operating voltage; and a row decoder connected to the plurality of word lines, configured to apply the selected operating voltage to an activated word line on the basis of a row address, and to apply the first unselected operating voltage or the second unselected operating voltage to a deactivated word line.

Abstract: A memory device includes a first memory array, a first isolation cell abutting a first side of the first memory array, a first edge cell array abutting a second side, opposite to the first side, of the first memory array, a second memory array arranged at a first side, opposite to the first memory array, of the first isolation cell, a second edge cell array, and multiple first word lines passing through the first edge cell array, the first memory array and being terminated at the first isolation cell. A first width of the first isolation cell is different from a second width of the first edge cell array. The second memory array is sandwiched between the second edge cell array and the first isolation cell.

Abstract: In some embodiments, an operating method of a storage device includes obtaining a plurality of points by searching for a first valley point between threshold voltage distributions of selection memory cells coupled to a selection word line of a plurality of word lines; calculating, using a first function, a first voltage level that corresponds to a first reference count value; calculating, using a second function, a second voltage level that corresponds to the first reference count value; classifying the selection memory cells into a plurality of coupling patterns according to an aggressor cell group of each of adjacent memory cells coupled to at least one adjacent word line adjacent to the selection word line; and performing a read operation, based on the plurality of coupling patterns of the selection memory cells, the first voltage level, and the second voltage level.

Abstract: Methods, systems, and devices for circuit partitioning for a memory device are described. In one example, a memory device may include a set of memory tiles that each include a respective array of memory cells (e.g., in an array level or layer). Each of the memory tiles may include a respective circuit level or layer associated with circuitry configured to operate the respective array of memory cells. The memory device may also include circuitry for communicating data between the memory cells of the set of memory tiles and an input/output component. Aspects of the circuitry for communicating the data may be subdivided into repeatable blocks each configured to communicate one or more bits, and the repeatable blocks and other aspects of the circuitry for communicating the data is distributed across the circuit layer of two or more of the set of memory tiles.

Abstract: A semiconductor structure and a chip are provided. The semiconductor structure includes: a first active area and a second active area extending along a first direction and having a first width in a second direction; a first WordLine (WL) drive transistor group including two gate dielectric areas connected to the first active area; a second WL drive transistor group including two gate dielectric areas connected to the first active area; a third WL drive transistor group including two gate dielectric areas connected to the second active area; and a fourth WL drive transistor group including two gate dielectric areas connected to the second active area. Each of the gate dielectric area extends along the second direction and has a second width in the first direction.

Abstract: Disclosed herein are related to a memory device. In one aspect, the memory device includes a memory array including a set of memory cells. In one aspect, each of the set of memory cells includes a corresponding transistor and a corresponding capacitor connected in series between a bit line and a select line. In one aspect, the memory device includes a first transistor including a source/drain electrode coupled to a controller and another source/drain electrode coupled to the bit line. In one aspect, the memory device includes a second transistor including a gate electrode coupled to the bit line. In one aspect, the second transistor is configured to conduct current corresponding to data stored by a memory cell of the set of memory cells.

Abstract: A nonvolatile memory device includes a memory cell region and a peripheral circuit region disposed below the memory cell region. The peripheral circuits include a page buffer, a row decoder, and other peripheral circuits, wherein the page buffer is included in a page buffer block disposed on a lower surface of the first semiconductor substrate to be distinguished from other circuits included in the peripheral circuit region in a first direction perpendicular to an upper surface of the first semiconductor substrate, is connected to the memory cell region through a connection portion penetrating through the first semiconductor substrate, and includes a plurality of vertical transistors each defined by a source region, a channel region, and a drain region stacked in sequence in the first direction.

Abstract: A circuit includes a first transistor and a second transistor cross-coupled with each other such that a source of the first transistor and a source of the second transistor are connected to a power supply, a gate of the first transistor is connected to a drain of the second transistor at a first node, a gate of the second transistor is connected to a drain of the first transistor at a second node. The circuit can provide a first level of a word line voltage to the memory cell by directly coupling the power supply configured at a first level to the memory cell through the second transistor and a third transistor, and provide a second level of the word line voltage by directly coupling the power supply configured at a second level to the memory cell through the second transistor and the third transistor.

Abstract: Systems and method are provided for a memory circuit. In embodiments, the circuit includes a plurality of memory cells corresponding to a word of data and a global write word line. A plurality of local write lines are connected to a subset of the plurality of memory cells of the word of data. Selection logic is configured to activate a particular subset of memory cells for writing via a particular local write line based on a signal on the global write word line and a selection signal associated with the particular subset of memory cells.

Abstract: Methods, systems, and devices for power-efficient access line operation for memory are described. A memory device may drive a voltage pulse on a first word line included in a set of word lines that is coupled with a master word line. The memory device may then a voltage pulse on a second word line included in the set of word lines coupled with the master word line. In between driving the voltage pulse on the first word line and driving the voltage pulse on the second word line, the memory device may maintain a voltage on the master word line below a threshold level.

Abstract: Technology for read in a cross-point memory array. Drive transistors pass read and write currents to the cross-point memory array. The read current charges a selected word line to turn on a threshold switching selector of a selected memory cell. While the threshold switching selector is on, the current (read or write) passes through the selected memory cell. The memory system applies a smaller overdrive voltage to a drive transistor when the drive transistor is passing the read current than when the drive transistor is passing the write current. A smaller overdrive voltage increases the resistance of the drive transistor. Increasing the resistance of the drive transistor increases the resistance seen by the threshold switching selector in the selected memory cell, which reduces the Ihold of the threshold switching selector.

Abstract: A method for programming a memory array of a non-volatile memory structure, the memory comprising a population of MLC NAND-type memory cells, wherein the method comprises applying: (1) an inhibit condition to one or more bit lines of the memory array, and (2) a zero voltage condition to one or more bit lines of the memory array such that less than half of the adjacent bit lines of the memory array experience a voltage swing between the inhibit condition and the zero voltage condition.

Abstract: The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an array of memory cells and sensing circuitry comprising a primary latch coupled to a sense line of the array. The sensing circuitry can be configured to perform a first operation phase of a logical operation by sensing a memory cell coupled to the sense line, perform a number of intermediate operation phases of the logical operation by sensing a respective number of different memory cells coupled to the sense line, and accumulate a result of the first operation phase and the number of intermediate operation phases in a secondary latch coupled to the primary latch without performing a sense line address access.

Abstract: A scan signal driving unit capable of reducing the RC delay of scan control lines in an ultra-high resolution display, such as 8K UHD. The scan signal driving unit includes a plurality of stages configured to sequentially output scan signals, first clock lines to which first clock signals are applied, and second clock lines to which second clock signals are applied. Each of the first clock lines includes a (1-1)-th metal pattern and a (1-2)-th metal pattern disposed on the (1-1)-th metal pattern. Each of the second clock lines includes a (2-1)-th metal pattern disposed on the same layer as one of the (1-1)-th metal pattern and the (1-2)-th metal pattern.

Abstract: An electronic device includes: a memory storing instructions; and a processor connected to the memory and configured to execute the instructions to: based on a software error occurring in the electronic device, determine whether attribute data set in relation to a memory margin of the electronic device corresponds to a specified value, based on determining that the attribute data corresponds to the specified value, identify a software error occurrence history stored in the memory, identify a defect associated with a memory margin configuration set for the memory based on the occurring software error and the software error occurrence history, and change the memory margin configuration by performing memory training on the memory based on the identification of the defect, wherein the memory margin includes information about a driving voltage and information about latency associated with data transmission.

Abstract: Apparatuses, systems, and methods for access based refresh operations. A memory bank may be divided into multiple sub-banks, each of which has a refresh control circuit. A word line in a first sub-bank may be refreshed responsive to a word line in a second sub-bank being accessed. Once a threshold number of refreshes have been performed in the sub-bank, further accesses to the other sub-banks may be ignored. If the threshold has not been met at the end of a refresh period, then the refresh control circuit may issue a refresh signal.

Abstract: A method is provided for writing a data word to a resistive memory consisting of 2T2R differential cells each having first and second sets of a resistor (R) and a selection transistor (T). The method includes generating an initial codeword, programming it in 1T1R mode, checking its programming in 1T1R mode, inverting it, programming the inverted initial codeword in 1T1R mode, checking its programming in 1T1R mode, and reading, in 2T2R differential mode, that the read data correspond to said initial data. A device designed to implement this write method and to an electronic system including this device is also provided.

Abstract: A memory device and operating method of the memory device are provided. The memory device comprises a memory cell storing data based on a first voltage, a row decoder selecting a wordline of the memory cell based on the first voltage, and a wordline predecoder configured to generate a “predec” signal, which is for generating a wordline voltage to be provided to the row decoder. The wordline predecoder is driven by the first voltage and a second voltage, which is different from the first voltage, receives a row address signal, associated with selecting the wordline, and an internal clock signal associated with adjusting operating timings of elements included in the memory device. The wordline predecoder performs a NAND operation on the row address signal and the internal clock signal, and provides the “predec” signal generated based on a result of the NAND operation to the row decoder.

Abstract: A negative voltage level conversion control circuit comprises a negative voltage generation circuit, a bias circuit, and a level shift unit circuit, wherein an output end of the bias circuit is connected to the level shift unit circuit, and the other end of the bias circuit is connected to the negative voltage generation circuit; an output end of the negative voltage generation circuit is connected to the level shift unit circuit; the bias circuit is configured to receive an enable signal and output a bias voltage; the bias voltage is used for controlling a switching process of the level shift unit circuit; the enable signal is used for enabling the bias circuit and the negative voltage generation circuit.

Abstract: A memory device, includes a memory partition. The memory partition includes a memory region comprising a memory element coupled to a wordline of the memory region, a sense amplifier region comprising a sense amplifier coupled to the memory element to sense a data state of the memory element, a sub-wordline region coupled to the wordline of the memory region, and a minigap region disposed at the intersection of the sub-wordline region and the sense amplifier region. The minigap includes a first plurality of transistors having a continuous layout in at least one direction across the minigap region with a second plurality of transistors of the sense amplifier region.

Abstract: Embodiments relate to the field of semiconductors and provide a wordline driver circuit and a memory. The wordline driver circuit at least includes a first type of wordline drivers and a second type of wordline drivers, wherein each of the wordline drivers includes a PMOS transistor and an NMOS transistor. A first type of PMOS transistors in the first type of wordline drivers and a second type of PMOS transistors in the second type of wordline drivers are configured to receive different first control signals. The first type of PMOS transistors and the second type of PMOS transistors are arranged side by side, and the NMOS transistors included in the first type of wordline drivers and the NMOS transistors included in the second type of wordline drivers are positioned on the same side of the first type of PMOS transistors and the second type of PMOS transistors.

Abstract: The present disclosure relates to memory devices and, more particularly, to bias voltage generation circuit for memory devices and methods of operation. The voltage generation circuit includes: an internal voltage generator which providing a bias voltage to at least one internal node of a bias voltage generation circuitry; and at least one pre-charging circuitry providing a predefined bias voltage to at least one internal node including a distributed network of local drivers.

Abstract: A method and a device is provided for utilizing unused valid (V) bits residing on a previous command to transmit additional activate information to a memory device. Additional activate information may be transmitted to the memory device without increasing the tRCD time, or increasing the command/address (CA) bus pins, or adding additional circuit area, thereby reducing the impact on the performance of the memory device.

Abstract: A resistive random-access memory (ReRAM) array with parallel reset and set programming and a method for programming is presented. The ReRAM array includes a plurality of ReRAM cells arranged in an array, wherein the array includes a plurality of rows and a plurality of columns, wherein at least two ReRAM cells of an array includes a word, wherein each ReRAM cell includes a select device having a control port, a first port, and a second port, and a resistive element; and a plurality of controllers, wherein the output of each of the plurality of controllers cause a reset programming or a set programming of the ReRAM cell in the column of the plurality of ReRAM cells that has the respective word line activated; such that the reset programming and the set programming occur in parallel.

Abstract: A low power hybrid reverse (LPHR) bandgap reference (BGR) and digital temperature sensor (DTS) or a digital thermometer, which utilizes subthreshold metal oxide semiconductor (MOS) transistor and the PNP parasitic Bi-polar Junction Transistor (BJT) device to form a reverse BGR that serves as the base for configurable BGR or DTS operating modes. The LPHR architecture uses low-cost MOS transistors and the standard parasitic PNP device. Based on a reverse bandgap voltage, the LPHR can work as a configurable BGR. By comparing the configurable BGR with the scaled base-emitter voltage, the circuit can also perform as a DTS with a linear transfer function with single-temperature trim for high accuracy.

Abstract: Apparatus and methods for page-based soft post package repair are disclosed. Based on data stored in a storage element, an address may be decoded to a prime row, a row-based redundant row, or a page-based redundant row. A match logic circuit may determine whether the address corresponds to a defective prime row and generate a match signal. A decoder can select a redundant row to be accessed instead of a prime row in response to the match signal indicating that the address data corresponding to the address to be accessed matches defective address data stored in a volatile memory. A page-based redundant row allows for page-by-page substitution for defective memory, allowing functional portions of memory to continue to be used.

Abstract: Synchronization for audio systems and related systems and circuitry are disclosed. An audio system includes a word select line of a digital audio interface, a serial clock line of the digital audio interface, and hardware circuitry. The hardware circuitry is configured to provide a word select signal to the word select line and a serial clock signal to the serial clock line. The word select signal is configured to indicate channels of a serial data signal provided to a serial data line of the digital audio interface. The hardware circuitry is also configured to synchronize the serial clock signal to a clock reference stream of an audio stream communicated via a network interface.

Abstract: A vertical memory device includes a plurality of memory blocks having a plurality of horizontal gate electrodes spaced apart from each other in a first direction and extending in a second direction. A plurality of vertical channels extends through the horizontal gate electrodes in the first direction. A plurality of charge storage structures are disposed between the vertical channels and the horizontal gate electrodes. A conductive path extends in a third direction. The plurality of memory blocks are arranged in the third direction and are divided from each other by a first division pattern that extends in the second direction. The plurality of horizontal gate electrodes at each level are connected to the conductive path at a first lateral side in the second direction to form a shared memory block.

Abstract: A compilation method includes the following: receiving a signal to be compiled and a resistance matching signal; performing compilation processing on the signal to be compiled to obtain a compilation result signal; and in the case where the signal to be compiled is a reserved code, performing compatibility selection processing on the compilation result signal according to the resistance matching signal to determine a first compiled value.

Abstract: A method, non-transitory computer readable medium, device, and system that detects a replay attack includes monitoring Global Navigation Satellite System (GNSS) time obtained by a GNSS receiver from a GNSS signal from a GNSS satellite. An alert condition for the replay attack is identified based on at least a detected delay between a universal coordinated time (UTC) and the GNSS time. An alert notification is provided based on the identification of the alert condition for the replay attack.

Abstract: According to some embodiments, re-programmable and/or reconfigurable analog circuitry may be provided. A plurality of reference floating-gate transistors are each programmable to be connectable to a plurality of global reference control lines of the analog circuitry to facilitate temperature compensation. In some embodiments, the plurality of analog nonvolatile memory cells are associated with parameter floating-gate transistors. Moreover, the plurality of analog parameter nonvolatile memory cells may be programmed to several orders of parameter magnitude.

Abstract: Disclosed herein is an apparatus that includes a first wiring layer including first and second conductive patterns extending in a second direction and coupled to source and drain regions, respectively, and a second wiring layer including third and fourth conductive patterns extending in the second direction and coupled to the first and second conductive patterns, respectively. The first conductive pattern has first and second sections arranged in the second direction, and the second conductive pattern has third and fourth sections arranged in the second direction. The first and fourth sections are arranged in a first direction, and the second and third sections are arranged in the first direction. The third conductive pattern covers the first section without covering the second section. The fourth conductive pattern covers the third section without covering the fourth section.

Abstract: Embodiments of the present application relate to the field of semiconductors, and provide a word line driver array and a memory. The word line driver array at least includes: a first transistor, a third transistor, a fourth transistor and a second transistor arranged sequentially, as well as a fourth word line, a first word line, a second word line and a third word line parallel to each other, wherein the fourth word line is connected to a drain of the fourth transistor, the first word line is connected to a drain of the first transistor, the second word line is connected to a drain of the second transistor, and the third word line is connected to a drain of the third transistor.

Abstract: Methods, systems, and devices for quality-of-service information for a multi-memory system are described. An interface controller may receive a first command from a host device during a set of clock cycles. The first command may be received over a command bus that includes a pin, such as a command select pin configured for double data rate signaling. The interface controller may decode the first command based on a state of the command select pin during at least one clock cycle of the set of clock cycles. And the interface controller may determine quality-of-service information for a second command based on decoding the first command and on information, such as a plurality of bits, included in the first command.

Abstract: A three-dimensional data encoding method includes: assigning three-dimensional points to M layers, where M is an integer greater than 1; generating respective predicted values of attribute information for the three-dimensional points; encoding the attribute information based on the respective predicted values; and generating a bitstream including layer-number information indicating a number N of lower layers including a bottom-most layer among the M layers, where N is an integer between zero and M, inclusive. In the generating of the predicted values: (i) a predicted value for an upper-layer three-dimensional point in upper layers other than the lower layers among the M layers is generated by a same-layer reference in which another three-dimensional point belonging to a same layer as the upper-layer three-dimensional point is referenced; and (ii) a predicted value for a lower-layer three-dimensional point in lower layers is generated in a condition where the same-layer reference is disabled.

Abstract: The present disclosure describes a memory device comprising memory cells at cross points of access lines of a memory array, and a two-transistor driver comprising a P-type transistor and a N-type transistor connected to the P-type transistor, the two-transistor driver being configured to drive an access line of the memory array to a discharging voltage during an IDLE phase, to drive said access line to a floating voltage during an ACTIVE phase, and to drive said access line at least to a first or second read/program voltage during a PULSE phase.

Abstract: A serial presence detect (SPD) device includes nonvolatile memory to store SPD information. Parity information suitable for single error correct and double error detect (SEC-DED) is also stored in association with the SPD information in the nonvolatile memory. The combination of SPD information and parity information is organized into codewords addressable at each memory location. During an initialization period occurring after a power on reset and before the SPD device is accepting I2C commands, the SPD device checks each memory location (codeword) for errors. Each error detected is counted to provide an indicator of device health. Before the initialization period expires, the SPD device writes a corrected codeword back to the nonvolatile memory.

Abstract: A level-shifting pulse latch is provided for a self-timed memory clock signal for a memory. The level-shifting pulse latch includes a system-power-domain-to-memory-power-domain level-shifter that inverts and level-shifts a system clock signal into an inverted version of the system clock signal. A pass transistor controls whether the inverted version of the system clock signal drives a memory-power-domain latch to produce the self-timed memory clock signal.

Abstract: The present disclosure includes apparatuses, methods, and systems for pre-decoder circuitry. An embodiment includes a memory array including a plurality of memory cells, decoder circuitry coupled to the memory array, wherein the decoder circuitry comprises a p-type transistor having a first gate, a first n-type transistor having a second gate, and a second n-type transistor having a third gate, and pre-decoder circuitry configured to provide a bias condition for the first gate, the second gate, and the third gate to provide a selection signal to one of the plurality of memory cells, wherein the bias condition comprises zero volts for the first gate, the second gate, and the third gate for a positive configuration for the memory cells and a negative voltage for the third gate and zero volts for the first gate and the second gate for a negative configuration for the memory cells.

Abstract: When selectively erasing one sub-block, a control circuit applies, in a first sub-block, a first voltage to bit lines and a source line, and applies a second voltage smaller than the first voltage to the word lines. Then, the control circuit applies a third voltage lower than the first voltage by a certain value to a drain-side select gate line and a source-side select gate line, thereby performing the erase operation in the first sub-block. The control circuit applies, in a second sub-block existing in an identical memory block to the selected sub-block, a fourth voltage substantially identical to the first voltage to the drain side select gate line and the source side select gate line, thereby not performing the erase operation in the second sub-block.

Abstract: Sense amplifier layout designs and related apparatuses and methods. An apparatus includes a cross-coupled pair of pull-up transistors of a sense amplifier, a cross-coupled pair of pull-down transistors of the sense amplifier, and a pair of conductive lines electrically connecting the cross-coupled pair of pull-up transistors to the cross-coupled pair of pull-down transistors. The apparatus also includes a sense amplifier control transistors sharing a continuous active material with one of the cross-coupled pair of pull-up transistors or the cross-coupled pair of pull-down transistors. A method includes asserting a shared control gate terminal of sense amplifier control transistors sharing a continuous active material with the cross-coupled pair of pull-down transistors, applying a pre-charge voltage potential to the pair of conductive lines, electrically connecting memory cells to the pre-charged pair of bit lines, and amplifying electrical charges delivered to the pair of bit lines by the memory cells.

Abstract: An address decoding circuit includes a decoding unit corresponding to a bank group and including first NAND gates, an address selection signal outputted by each first NAND gate controls a corresponding bank in the bank group corresponding to the decoding unit. The first NAND gate includes a first input end connected to an address signal of a bank corresponding to the first NAND gate and a second input end connected to an output end of a second NAND gate or a third NAND gate, the second NAND gate includes a first input end connected to an enable signal and a second input end connected to a control signal, and the third NAND gate includes a first input end connected to the enable signal and a second input end connected to an inverted signal of the control signal.