Abstract: Embodiments of silicon-based thermal energy transfer apparatus for gain medium crystal of a laser system are provided. For a disk-shaped crystal, the apparatus includes a silicon-based manifold and a silicon-based cover element. For a rectangular cuboid-shaped gain medium crystal, the apparatus includes a first silicon-based manifold, a second silicon-based manifold, and first and second conduit elements coupled between the first and second manifolds. For a right circular cylinder-shaped gain medium crystal, the apparatus includes a first silicon-based manifold, a second silicon-based manifold, and first and second conduit elements coupled between the first and second manifolds.

Abstract: Embodiments of the invention include a fiber laser cavity package having improved fiber management and thermal management capability and methods of making such fiber laser cavity package. Each element of the fiber laser cavity is grouped into plurality of sections and each section is placed onto a heat conducting surface within the fiber laser cavity package to dissipate unwanted heat from the elements. When the fiber laser cavity is stored in the package, the fiber laser cavity is arranged such that fiber crossings are substantially reduced or eliminated within the package.

Abstract: This invention relates to semiconductor lasers, and more particularly, to a cooling module for fabricating a liquid-cooled semiconductor laser, a fabricating method, and a semiconductor laser fabricated from the module, wherein the cooling module for a laser makes use of a liquid cooling plate provided with radiating fins to cool the semiconductor chip. After replacement of the traditional micro-channel structure with the radiating fin structure, the present invention effectively reduces the resistance to flow of the cooling liquid, remarkably lowers the pressure decrease of the cooling liquid, makes it easier to seal the cooling liquid, provides stronger heat dissipating capability, effectively elongates the lifetime of the semiconductor laser, and enhances the output power and reliability of the semiconductor laser, alongside the advantages of simple fabrication and low production cost.

Abstract: A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 ?m is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied.

Abstract: There is provided a rotary disk laser module including disk comprised of at least one lasing material. The lasing material may be excited by a laser excitation source, such as an optical pump beam directed onto the disk. The laser gain region contains excited lasing material and extends between the first and second surfaces of the disk. A laser generator is formed when the gain region is brought into optical communication with a laser generator. A laser generator may be a laser oscillator or a laser amplifier. To create pulsed laser output, an optical modulator is positioned in the laser beam propagation path of the laser generator.

Abstract: Included are, a module fixing body having a plurality of mounting holes into which laser modules are fitted and accommodated, respectively; an electricity-supplying member having an end provided with electricity-supplying terminals, which are connected to electricity-receiving terminals of the laser module accommodated in the mounting hole; and a cooling member that cools each of the laser modules. A groove in which the electricity-supplying member is accommodated is formed in a surface of the module fixing body, and the cooling member is closely arranged on the surface of the module fixing body.

Abstract: Air-cooled laser devices and formation methods are provided. An exemplary air-cooled laser device can include at least a laser active slab, a first silicon carbide clad, a second silicon carbide clad, a first laser diode array, and a first cylindrical lens. The first and second silicon carbide clads can be symmetrically bonded to the laser active slab and can have a surface area greater than the laser active slab to form an air duct surrounding side surfaces of the laser active slab and between the silicon carbide clads. The first laser diode array can emit first input pump laser beams to be collimated by the first cylindrical lens to provide parallel and quasi-parallel pump laser beams that are guided by the air duct to enter into the laser active slab from at least a first side surface of the laser active slab.

Abstract: A diode-laser bar is mounted on water-cooled heat-sink between two ceramic sub-mounts for electrically isolating cooling-water in the heat-sink from the diode-laser bar. Mounting between the two ceramic sub-mounts also provides for balancing stresses due to differences in coefficient of thermal expansion (CTE) between the sub-mounts and the diode-laser bar. Both sub-mounts are in thermal communication with the heat-sink for providing two-sided cooling of the diode-laser bar.

Abstract: A water-cooled heat-sink for a diode-laser bar includes a copper-cooling-unit having an integral mount thereon for the diode-laser bar. The copper-cooling-unit is attached to a steel base-unit. The base-unit and the cooling-unit are cooperatively configured such that at least one cooling-channel is formed in the cooling-unit by the attachment of the base-unit to the cooling-unit. The cooling-channel is positioned to cool the mount when cooling-water flows through the cooling-channel.

Abstract: To efficiently apply jitter to an optical signal using a simple configuration, provided is an optical signal output apparatus that outputs an optical pulse pattern signal including jitter, the optical signal generating apparatus comprising a light source section that outputs an optical signal having an optical frequency corresponding to a frequency control signal; an optical modulation section that modulates the optical signal output by the light source section, according to a designated pulse pattern; and an optical jitter generating section that delays an optical signal passed by the optical modulation section according to the optical frequency, to apply jitter to the optical signal.

Abstract: A surface-emitting laser device is disclosed that includes a substrate connected to a heat sink; a first reflective layer formed of a semiconductor distributed Bragg reflector on the substrate; a first cavity spacer layer formed in contact with the first reflective layer; an active layer formed in contact with the first cavity spacer layer; a second cavity spacer layer formed in contact with the active layer; and a second reflective layer formed of a semiconductor distributed Bragg reflector in contact with the second cavity spacer layer. The first cavity spacer layer includes a semiconductor material having a thermal conductivity greater than the thermal conductivity of a semiconductor material forming the second cavity spacer layer.

Abstract: A semiconductor laser includes a ridge section on top of a semiconductor laminated section. The ridge section is a stripe-shaped projection or ridge and serves as a constriction structure for constricting current and light. A pair of terrace sections is located on top of the semiconductor laminated structure. The terrace sections are raised island portions sandwiching and spaced from the ridge section. An active region is located below the ridge section as viewed in plan. High refractive index regions are located on both sides of the active region and below the terrace sections, respectively. Cladding regions are located between the active region and the high refractive index regions. The high refractive index regions have a higher refractive index than the cladding regions.

Abstract: A multi-wavelength semiconductor laser device includes a block having a rectangular groove with a bottom face and two side faces extending in a predetermined direction; and laser diodes with different light emission wavelengths mounted on the bottom face and the side faces of the groove in the block so that their laser beams are emitted in the predetermined direction.

Abstract: The laser device includes a semiconductor laser element having an emission surface from which laser light is emitted, an optical fiber having an end part facing the emission surface, and an optical fiber supporting member which (i) supports the optical fiber and (ii) has a bonding pad to which the optical fiber is fixed by solder. The optical fiber supporting member includes a beam part having (i) a first main surface on which the bonding pad is provided and (ii) a second main surface opposite to the first main surface, and a pillar part which is fixed to a base and is joined to the beam part on an end portion of the beam part such that the second main surface and the base face each other while being spatially away from each other.

Abstract: A mount for semiconductor laser devices comprises thermally conductive anode and cathode blocks on either side of a semiconductor laser device such as a laser diode. Interposed between at least the anode block and the anode of the semiconductor laser device is a sheet of conformable material with high thermal conductivity such as pyrolytic highly-oriented graphite. In some embodiments, a second sheet of such thermally conductive conformable material is interposed between the cathode of the semiconductor laser device and the cathode block. The semiconductor laser device can be either a single laser diode or a diode bar having a plurality of emitters. A thermally conductive, but electrically insulating, spacer of essentially the same thickness as the laser diode or bar surrounds the diode or bar to prevent mechanical damage while still permitting the conformable material to be maintained in a compressed state.

Abstract: Disclosed are cooling apparatus and methods of cooling a template. The cooling apparatus includes a reticle and an optical cooling material. The reticle includes patterning for at least partially reflecting patterning radiation incident on a first side of the reticle. The optical cooling material is in thermally-conductive coupling with the reticle mount and is configured to produce cooling when exposed to a laser radiation. More particularly, the optical cooling material includes a glass material that exhibits anti-Stokes fluorescence that produces cooling of the glass material when exposed to an infrared laser beam. In some embodiments, the cooling apparatus may be incorporated with a reticle mount. The reticle mount is in thermally-conductive coupling with a second side of the reticle.

Abstract: A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

Abstract: A laser diode system is disclosed in which a substrate made of a semiconductor material containing laser diodes is bonded to a substrate made from a metallic material without the use of any intermediate joining or soldering layers between the two substrates. The metal substrate acts as an electrode and/or heat sink for the laser diode semiconductor substrate. Microchannels may be included in the metal substrate to allow coolant fluid to pass through, thereby facilitating the removal of heat from the laser diode substrate. A second metal substrate including cooling fluid microchannels may also be bonded to the laser diode substrate to provide greater heat transfer from the laser diode substrate. The bonding of the substrates at low temperatures, combined with modifications to the substrate surfaces, enables the realization of a low electrical resistance interface and a low thermal resistance interface between the bonded substrates.

Abstract: A laser system having a cooling apparatus is disclosed. The laser system includes a resonator, a gain medium and multiple heat-absorbing discs. The resonator is formed by a first mirror and a second mirror. The gain medium, which is contained within the resonator, is collectively formed by a group of gain medium segments. Each of the gain medium segments is preferably in the shape of a cylindrical disc. The heat-absorbing discs are interleavely disposed among the gain medium segments to provide face cooling for the gain medium segments during the operation of the laser system.

Abstract: An optical transmitter is disclosed, where the optical transmitter shows an emission wavelength kept stable in one of grid wavelengths of the WDM system during the boot of the transmitter. The optical transmitter includes an LD, a TEC to control a temperature of the LD, and a controller. Detecting the flag to enable the optical output, the controller increases the driving current of the LD concurrently with the decrease of the temperature of the TEC to compensate the self-heating of the LD due to the driving current.

Abstract: A light emitting device includes a semiconductor laser, which oscillates in a single longitudinal mode, formed above a semiconductor substrate, a first heater, which controls a temperature of the semiconductor laser, provided near the semiconductor laser, a gain unit, which amplifies a beam outputted from the semiconductor laser and outputs an amplified beam, formed above the semiconductor substrate, a second heater, which controls a temperature of the gain unit, provided near the gain unit, and a second harmonic generation element, which converts the amplified beam outputted from the gain unit to a second harmonic light and outputs the second harmonic light.

Abstract: A semiconductor component on mutually opposing sides is joined in a first and a second bonded connection with a heat conducting body each. The heat-conducting bodies are joined in a third bonded connection in the region of the sections thereof extending away from the semiconductor element. A spacer, which with regard to the third connection, is disposed on the opposite side of the semiconductor component between the heat-conducting bodies, in conjunction with the joining zone thickness of the third connection being greater than that of the first or the second joining zone to ensure that defined joining zone thicknesses in the bonded connection is maintained during the joining process. The third connection can be used for at least partial heat transfer of the waste heat of the semiconductor component, particularly to a heat sink that is connected to the heat transfer device.

Abstract: Embodiments are directed to laser emitter modules, or subassemblies thereof, and methods and devices for making or using the modules. Some module embodiments are configured to provide hermetically sealed enclosures that are thermally stable during use, highly reliable in adverse environments, convenient and cost effective to manufacture or any combination of the foregoing.

Abstract: The laser device includes a semiconductor laser element having an emission surface from which laser light is emitted, an optical fiber having an end part facing the emission surface, and an optical fiber supporting member which (i) supports the optical fiber and (ii) has a bonding pad to which the optical fiber is fixed by solder. The optical fiber supporting member includes a beam part having (i) a first main surface on which the bonding pad is provided and (ii) a second main surface opposite to the first main surface, and a pillar part which is fixed to a base and is joined to the beam part on an end portion of the beam part such that the second main surface and the base face each other while being spatially away from each other.

Abstract: A high-power semiconductor laser includes a support block, an anode metal plate, a cathode metal plate and a chip. The support block has a step, and the two ends of the support block have bosses, in which there are screw holes. The chip is welded to an insulation plate, which is attached to the support block. The anode metal plate and the cathode metal plate are, respectively, welded with an anode insulation plate and a cathode insulation plate, which are welded on the step of the support block. The cathode of the chip is connected with a metal connecting plate. The metal connecting plate is connected to the anode metal plate and the cathode metal plate. The insulation plate and the anode metal plate are bonded using a gold wire in press-welding.

Abstract: A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.

Abstract: An interposer (support substrate) for an opto-electronic assembly is formed to include a thermally-isolated region where temperature-sensitive devices (such as, for example, laser diodes) may be positioned and operate independent of temperature fluctuations in other areas of the assembly. The thermal isolation is achieved by forming a boundary of dielectric material through the thickness of the interposer, the periphery of the dielectric defining the boundary between the thermally isolated region and the remainder of the assembly. A thermo-electric cooler can be used in conjunction with the temperature-sensitive device(s) to stabilize the operation of these devices.

Abstract: A light-emitting device reliably supplying electric power to a light-emitting element on a supporting base and securing heat dissipation, and a method of manufacturing the light-emitting device are provided. A light-emitting device includes: a light-emitting element arranged on a first supporting base; a package covering the first supporting base and the light-emitting element therewith, and supporting the first supporting base; and a thermal conductive member having ends which are bonded to the light-emitting element and the package, respectively, so as to also have a wiring function.

Abstract: There is provided a laser cooling apparatus including: a laser for providing an emission; a silicon-on-insulator substrate; and a thin film microstructure thermally anchored to the silicon-on-insulator substrate, the thin film microstructure being made from a material selected from either a II-VI binary compound semiconductor or a II-VI tenary compound semiconductor.

Abstract: A light emitting device includes a light emitting element mounting component, including a cubic package component formed of a silicon member covered with a insulating layer, and the package component including a bottom portion, a sidewall portion provided to stand upright on both ends of the bottom portion respectively, and a backwall portion provided to stand upright on an innermost part of the bottom portion, and the package component in which a cavity is provided in an inner side, and a light emitting element mounted on an inner side surface of the backwall portion of the package component, and including a light emitting surface on an upper end part, wherein a plurality of said light emitting element mounting components are stacked in a depth direction of the cavity to direct toward an identical direction.

Abstract: A gain-module for use in an OPS-laser includes a multilayer semiconductor gain-structure surmounting a multilayer compound mirror-structure. Within the multilayer compound mirror-structure is a relatively thick layer of diamond which serves as a heat-spreader.

Abstract: The invention relates to a laser diode structure, specifically for use in gas detection, with a hermetically sealed housing with electrical connections having a bottom and a window. A laser diode chip and a temperature control system for the laser diode chip are provided in the housing. A thermo element in the form of a Peltier element forms the temperature control system, and is connected via a lower flat surface to the bottom of the housing and via an upper flat surface to the laser diode chip, with a temperature-controlled beam shaping element as collimator provided between the laser diode chip and the window of the housing that acts on a laser beam emerging from a laser aperture of the laser diode chip before it passes through the window. The beam shaping element is in contact with the laser diode chip and is preferably connected via a boundary surface to the laser aperture with surface-to-surface contact or adhesively, or is made in one piece together with the laser aperture.

Abstract: A diode pumped solid-state laser for high shock, high vibration environments such as those found in laser ignition systems for artillery systems which internally integrate into the breech of an artillery system such as a 155 mm howitzer. The diode pumped solid-state laser employs a unique gain medium mounting which permits its use in such high shock/high vibration environments. Contributing further to robustness is a monolithic design based on diode arrays mounted in a linear configuration along with an advanced polycrystalline gain medium laser rod. Advantageously, and in sharp contrast to laser ignition systems incorporating flash lamps, the diode pumped solid-state laser of the present invention permits a seamless integration into a howitzer artillery weapons system without other complex mounting provisions or shock isolation system(s).

Abstract: A semiconductor light emitting device includes a nitride semiconductor layer, an insulating film, a first electrode, and a second electrode which are provided on a substrate. The nitride semiconductor layer includes a second cladding layer having a stripe-shaped ridge. The insulating film is provided on a portion of the second cladding layer including the at least one ridge. The first electrode is provided to contact the upper surface of the ridge. The second electrode is provided to contact the upper surface of the first electrode, the upper surface of the insulating film, and a portion of the second cladding layer exposed from the insulating film.

Abstract: A high power source of electro-magnetic radiation having a multi-purpose housing is disclosed. The multi-purpose housing includes an interior filled with a material forming at least a light source and further comprising a reflector which can envelope a laser rod surrounded by light sources for providing light excitation to the laser rod. A material defining outer surfaces of the light sources extends out to and defines outer surfaces of the reflector. A high-reflectivity coating is disposed over an outer surface of the reflector, as is a protective coating. Also disposed over an outer surface of the reflector can be an optional heat sink, with cooling being performed by an optional arrangement of forced-air traveling over the heat sink. The light sources may be light source pumps, and the high-reflectivity coating may be formed to envelop the reflector.

Abstract: Optical pump modules using VCSEL arrays are provided to pump optical gain media for achieving high power laser output in CW, QCW and pulse operation modes for operation. Low divergence and symmetric far-field emission from VCSELs are particularly suitable for compact arrays. VCSEL arrays configured as laser pump modules are operable at high temperatures with practically no degradation over a long period of time. VCSEL pump modules are adaptable for side- or end-pumping configurations to pump high power lasers in CW, QCW and pulse mode. Power output from VCSEL pump modules is scalable. Incorporating microlens arrays with the VCSEL arrays improve brightness of the pump modules. High power and high temperature operation of VCSEL modules make it suitable for making compact high power solid state lasers that are operable in small spaces such as, ignition of internal combustion engines, stationary power generation engines and pulsed detonation engines.

Abstract: A device for emitting a laser beam comprises, in a housing, a laser-emitting component emitting a laser beam and mounted on a base, a heat-dissipating component, at least one collimating lens, and a lens mounting. The heat-dissipating component dissipates the heat produced by the laser of the laser-emitting component and secures the base of the laser-emitting component. The heat-dissipating component has a positioning mark and at least three holes for centering pins machined together with the positioning mark. The lens mounting secures the lens opposite the laser-emitting component and is positioned relative to the heat-dissipating component by at least three centering pins positioned in the holes of the heat-dissipating component.

Abstract: An apparatus for driving a wavelength-independent light source is provided. The apparatus includes a seed light signal generation unit configured to generate seed light signals with one or more wavelengths based on a wavelength identification signal, a wavelength light detection unit configured to detect the wavelength identification signal from the seed light signals, an extraction unit configured to extract wavelength information corresponding to the detected wavelength identification signal and extract a driving condition of a wavelength-independent light source corresponding to the extracted wavelength information, and a driving unit configured to drive the wavelength-independent light source according to the extracted driving condition.

Abstract: A high power laser source comprises a bar of laser diodes having a first coefficient of thermal expansion CTEbar on a submount having a second coefficient CTEsub and a cooler having a third coefficient CTEcool. The submount/cooler assembly shows an effective fourth coefficient CTEeff differing from CTEbar. This difference leads to a deformation of the crystal lattice of the lasers' active regions by mechanical stress. CTEeff is selected to be either lower than both CTEbar and CTEcool or is selected to be between CTEbar and CTEcool. The submount may either comprise layers of materials having different CTEs, e.g., a Cu layer of 10-40 ?m thickness and a Mo layer of 100-400 ?m thickness, or a single material with a varying CTEsub. Both result in a CTEsub varying across the submount's thickness.

Abstract: An optical semiconductor device has a semiconductor substrate, an optical semiconductor region and a heater. The optical semiconductor region is provided on the semiconductor substrate and has a width smaller than that of the semiconductor substrate. The heater is provided on the optical semiconductor region. The optical semiconductor region has a cladding region, an optical waveguide layer and a low thermal conductivity layer. The optical waveguide layer is provided in the cladding region and has a refractive index higher than that of the cladding region. The low thermal conductivity layer is provided between the optical waveguide layer and the semiconductor substrate and has a thermal conductivity lower than that of the cladding region.

Abstract: A method of making a semiconductor optical integrated device includes the steps of forming, on a substrate, a plurality of semiconductor integrated devices including a first optical semiconductor element having a first bonding pad and a second optical semiconductor element; forming a plurality of bar-shaped semiconductor optical integrated device arrays by cutting the substrate, each of the semiconductor optical integrated device arrays including two or more semiconductor optical integrated devices; alternately arranging the plurality of semiconductor optical integrated device arrays and a plurality of spacers in a thickness direction of the substrate so as to be fixed in place; and forming a coating film on a facet of the semiconductor optical integrated device array. Furthermore, the spacer has a movable portion facing the first bonding pad, the movable portion protruding toward the first bonding pad and being displaceable in a protruding direction.

Abstract: A top emitting VCSEL array may be coupled to a separate heat spreading superstrate that may be positioned above the apertures of the array and that may be able to transmit the emitted beams through the heat spreading superstrate. The VCSEL devices in the array may be controlled by an electrical connection to a pattern of conductive elements positioned in close contact with, but electrically isolated from, the heat spreading superstrate. The conductive elements may electrically control one or more of the VCSEL devices to enable sectional control of the light output. The elements may also be arraigned in a ground-signal-ground or coplanar waveguide configuration to improve the frequency response of the array.

Abstract: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with wiring. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. A plurality of OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the OE elements positioned in optical alignment with the optical via for receiving the light. A carrier is interposed between electrical interconnect elements. The carrier is positioned between the wiring of the silicon layer and a circuit board and the carrier is electrically connecting first interconnect elements connected to the wiring of the silicon layer and second interconnect elements connected to the circuit board.

Abstract: A heat sink for cooling parts, subassemblies, modules, or similar components, for cooling electrical or electronic components. The heat sink includes at least one cooling element which forms at least one cooling area for connecting the component that is to be cooled and which is made of a metallic material in the cooling area.

Abstract: In a laser light source device having an optical element and a plurality of heat sinks on which the optical element is joined directly or through a sub mount, and obtained by joining the heat sinks to each other by means of a joining material such that optical elements are optically directly joined to each other, the laser light source device includes a groove portion extending in a direction substantially orthogonal to an optical axis of light in the laser light source device on any one of a joining surface of the optical element or the sub mount to join with the heat sink and a joining surface of the heat sink to join with the optical element or the sub mount.

Abstract: Embodiments are directed to laser emitter modules and methods and devices for making the modules. Some module embodiments are configured to provide hermetically sealed enclosures that are convenient and cost effective to assemble and provide for active alignment of optical elements of the module.

Abstract: A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.

Abstract: Optically pumped laser structures incorporate reflectors that have high reflectivity and are bandwidth limited to a relatively narrow band around the central laser radiation wavelength. In some cases, the reflectors may be ¾-wavelength distributed Bragg reflectors (DBRs).

Abstract: A laser diode array includes: a heat dissipator; a plurality of submounts disposed independently of one another on the heat dissipator; and a plurality of laser diode devices including two or more kinds of laser diode devices with different oscillation wavelengths, the laser diode devices being disposed on the respective submounts, and being electrically connected to one another.

Abstract: A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated with a heat-spreading material layer and are configured so that the maximum height of the posts is about the same as the maximum height of the laser structure. When the laser apparatus is mounted to a heat sink in an epi-down configuration using solder applied to the top of the laser structure and the at least one post, the channels between the at least one post and the laser structure provide a relief flow path for the solder and ensure that the laser structure does not come directly into contact with the solder.