Abstract: A laser assembly (10) that generates a beam (20) includes a gain medium (12) having a first facet region (24) that includes a first facet (16), a second facet region (26) that includes a second facet (18), and an intermediate region (28) that separates and connects the facet regions (24) (26). Additionally, the gain medium (12) includes a substrate layer (30) and a core layer (34) that extend between the facets (16) (18). The gain medium (12) is designed so that when current is directed to the gain medium, (i) current flows through the core layer (34) in the intermediate region (28) to generate the beam (20), and (ii) current does not flow through or flows at a reduced rate through the core layer (34) in one or both facet regions (24) (26).

Abstract: The present invention relates to the packaging of high power laser(s) in a surface mount technology (SMT) configuration at low-cost using wafer-scale processing. A reflective sidewall is used to redirect the output emission from edge-emitting lasers through an optical element (e.g., a diffuser, lens, etc.). A common electrical pad centered inside the package provides p-side connection to multiple laser diodes (i.e. for power scalability). Thick plating (e.g. 75 um to 125 um) with a heat and electrically conductive material, e.g. copper, on a raised bonding area of a substrate provides good heat dissipation and spreading to the substrate layer during operation. The composite CTE of the substrate layer, e.g. AlN, and the heat/electrical conductive plating, e.g. Cu, substantially matches well with the laser substrates, e.g. GaAs-based, without the requirement for an additional submount.

Abstract: A method for fabricating an optical device including: a first step of preparing a carrier having a first area and a second area, both edges of the second area having a wall of a step, one edge of the second area being adjacent to the first area, the first area having a first thickness, the second area having a second thickness larger than the first thickness, a second step of mounting the carrier on a temperature control device after the first step, and a third step of mounting a first optical component on the first area of the carrier after the second step.

Abstract: A solid-state lasing device includes a micro-chip oscillator (MCO) affixed to a first tube, and a volume Bragg grating (VBG) plate affixed to a second tube. The second tube is configured to be telescopically coupled to the first tube with a slip fit such that the VBG plate is concentrically aligned with and is positioned at a specified distance from the MCO.

Abstract: A laser diode arrangement having a multiplicity of laser diodes (11) arranged along side one another, comprises a heat sink (9) on which the laser diodes (11) are mounted and a cooling body (1) which is in intimate contact with the heat sink (9), wherein the cooling body (1) has two coolant channels (2; 3), which run parallel to the longitudinal axis of the heat sink (9) and are embodied as a feed channel (2) and as a discharge channel (3) for a coolant. According to the invention a multiplicity of cooling channels (5, 7; 6, 8) lying along side one another are provided, which branch off from the feed channel (2), lead past the heat sink (9), and open into the discharge channel (3), wherein cooling channels (5, 7; 6, 8) lying directly alongside one another branch off at different locations of the periphery of the feed channel (2) and of the discharge channel (3).

Abstract: A laser light source module includes a housing and a heat sink that is thermally connected to the housing. The housing includes a laser element that emits laser light, a laser holder that is made of metal to hold the laser element, a laser light receiving element that receives laser beam from the laser element, a mirror element that reflects the laser light to scan a screen, an optical element that is disposed on the optical axis of the laser light. The laser holder is thermally connected to the housing with a thermally conductive member. A protrusion is formed on the thermally conductive member. The protrusion and the springiness of the thermally conductive member are used to press the laser holder against the housing in the same direction as the direction of laser light emission.

Abstract: Embodiments of silicon-based thermal energy transfer apparatus for gain medium crystal of a laser system are provided. For a disk-shaped crystal, the apparatus includes a silicon-based manifold and a silicon-based cover element. For a rectangular cuboid-shaped gain medium crystal, the apparatus includes a first silicon-based manifold, a second silicon-based manifold, and first and second conduit elements coupled between the first and second manifolds. For a right circular cylinder-shaped gain medium crystal, the apparatus includes a first silicon-based manifold, a second silicon-based manifold, and first and second conduit elements coupled between the first and second manifolds.

Abstract: A temperature control module and a support block are mounted on a metal stem. A dielectric substrate is mounted on a side surface of the support block. A support block is mounted on a cooling surface of the temperature control module. A dielectric substrate is mounted on a side surface of the support block. A semiconductor optical modulation element is mounted on the dielectric substrate. A lead pin and a signal line are connected through a bonding wire. The signal line and a signal conductor are connected through a bonding wire. The signal conductor and the semiconductor optical modulation element are connected through a bonding wire.

Abstract: A thermal management apparatus and method for a solid-state laser system enabling the laser system to have near isothermal temperatures across and throughout a solid-state gain material, by mechanically controlling an oscillating heat pipe having effective thermal conductivity of 10-20,000 W/m*K; bonding a solid-state lasing crystal or ceramic to the mechanically controlled oscillating heat pipe; and providing a supporting structure including a surface bonded to the solid-state lasing crystal or ceramic that matches the coefficient of thermal expansion of both the solid-state lasing crystal or ceramic and the mechanically controlled oscillating heat pipe.

Abstract: Various embodiments are disclosed for a thermal management system and related method for selectively thermally isolating and thermally connecting a target component. One embodiment of a system includes a first component having a first surface proximate to a target component, and an electromagnet between the first surface and the target component. A second component is spaced apart from the first component to form a gap that serves as a thermal boundary between the first component and the second component. A carrier fluid disposed within the gap includes multiple thermally conductive, ferrous particles. The carrier fluid is configured to align at least a portion of the thermally conductive, ferrous particles when the electromagnet generates a magnetic field that attracts the particles, and to displace at least a portion of the particles when the electromagnet generates a magnetic field that repels the particles.

Abstract: Within a semiconductor laser device, mounting a semiconductor laser element array of multi-beam structure on a sub-mount, the semiconductor laser element array of multi-beam structure comprises one piece of a semiconductor substrate 11; a common electrode 1, which is formed on a first surface of the semiconductor substrate; a semiconductor layer 2, which is formed on the other surface of the semiconductor substrate, and has a plural number of light emitting portions 7 within an inside thereof; a plural number of anode electrodes 3 of a second conductivity type, which are formed above the plural number of light emitting portions, respectively; and a supporting portion 25, which is provided outside a region of forming the light emitting portions, wherein on one surface of the sub-mount is connected an electrode 3 of the semiconductor laser element array through a solder 4, and that solder 4 is formed to cover a supporting portion and an electrode neighboring thereto, and further on the electrode 3 is formed a g

Abstract: An external-cavity tuneable laser includes a gain medium and a tuneable mirror wherein at least the tuneable mirror is in thermal contact with a thermally conductive platform. The tuneable mirror lays substantially horizontally on the thermally conductive platform significantly improving the thermal contact of the tuneable mirror with the platform. A laser beam from the gain medium is directed onto the tuneable mirror, which is mounted substantially horizontally with respect to the thermally conductive platform, by means of a deflector that deflects the beam or a large part of it toward one of the principal surfaces of the tuneable mirror. The resulting laser cavity is a folded cavity. The thermally conductive platform is preferably thermally coupled to a TEC that provides thermal control for the platform. The deflector may be a beam splitter that deflects part of the incoming light and transmits the remaining part.

Abstract: A diode-laser bar package includes a diamond composite heat-sink on which is soft-solder bonded a copper-pad having an area much greater than that of the diode-laser bar. A constraining-block of a metal having a CTE matching that of the diode-laser bar is hard-solder bonded to the conductive pad. The constraining-block is configured such that the conductive pad in the region of the diode-laser bar has a CTE about equal to that of the constraining-block, and, accordingly, the diode-laser bar.

Abstract: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. One or more first OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the first OE elements positioned in optical alignment with the optical via for receiving the light. A second OE element embedded within the wiring layer. A carrier may be interposed between electrical interconnect elements and positioned between the wiring layer and a circuit board.

Abstract: Illuminator module comprising VCSEL arrays with planar electrical contacts, readily adaptable for surface mounting, is provided. Monolithic VCSEL arrays are configured in array patterns on two and three-dimensional surfaces. Illuminator modules are easily expandable by increasing the array size or by modularly arranging more arrays with or without a transparent substrate. Different shapes of illuminator modules may be configured by tiling array modules monolithically on a common substrate, or by tiling small modules. The surface mountable illuminator modules are easily assembled on a thermally conductive surface that may be air or liquid cooled for efficient heat dissipation. Array modules may be integrated with other electronic circuits such as current drivers, sensors, controllers, processors, etc.

Abstract: An optical illuminator using Vertical Cavity Surface Emitting Laser (VCSEL) is disclosed. Optical modules configured using single VCSEL and VCSEL arrays bonded to a thermal submount to conduct heat away from the VCSEL array, are suited for high power and high speed operation. High speed optical modules are configured using single VCSEL or VCSEL arrays connected to a high speed electronic module on a common thermal submount or on a common Printed Circuit Board (PCB) platform including transmission lines. The electronic module provides low inductance current drive and control functions to operate the VCSEL and VCSEL array. VCSEL apertures are designed for a desired beam shape. Additional beam shaping elements are provided for VCSELs or VCSEL arrays, for desired output beam shapes and/or emission patterns. VCSEL arrays may be operated in continuous wave (CW) or pulse operation modes in a programmable fashion using a built-in or an external controller.

Abstract: A laser comprises an end pump light source and a gain medium having a first end, a second end, and four sides comprising a first, a second, a third, and a fourth side. The end pump light source is optically coupled to the first end and pumps the gain medium. The first side and the third side are tapered inwardly from the first end to the first end to the second end at a taper angle ? relative to a longitudinal lasing axis and have a polished finish capable of reflecting light inside the gain medium. The second side and the fourth side are substantially parallel to the longitudinal lasing axis have a ground blasted finish. The first side is also tilted inwardly at a slant angle ? from the fourth side to the second side. A laser beam R0 exits the second end of the gain medium.

Abstract: A wavelength conversion structure includes a light guide formed of a light-transmissive member having a laser light incident port that allows the laser light to be introduced and a phosphor-containing layer that covers at least part of the surface of the light guide. The light guide has a light diffusing structure having asperities and a light reflecting film. The asperities are formed over the surface of the light guide except a laser light incident surface having the laser light incident port. The light reflecting film is formed over the surface of the light guide along the asperities except the laser light incident port and the portion covered with the phosphor-containing layer.

Abstract: A system and method for cooling an optical fiber includes a flexible heat sink member, a heat pipe evaporator, and a thermal storage medium. The flexible heat sink member is in thermal contact with the optical fiber. The heat pipe evaporator is configured to dissipate heat from the optical fiber. The thermal storage medium is in thermal contact with the flexible heat sink member and the heat pipe evaporator. The flexible heat sink member is configured to compensate for any mismatch in coefficient of thermal expansion between material of the optical fiber and material of the flexible heat sink member so as to provide radial compliance and to maintain direct thermal contact between the optical fiber and the flexible heat sink member.

Abstract: A temperature control module and a support block are mounted on a metal stem. A dielectric substrate is mounted on a side surface of the support block. A support block is mounted on a cooling surface of the temperature control module. A dielectric substrate is mounted on a side surface of the support block. A semiconductor optical modulation element is mounted on the dielectric substrate. A lead pin and a signal line are connected through a bonding wire. The signal line and a signal conductor are connected through a bonding wire. The signal conductor and the semiconductor optical modulation element are connected through a bonding wire.

Abstract: An apparatus that includes a silicon-based support member and a silicon-based alignment structure is provided. The silicon-based alignment structure is received on a receiving surface of the support member. The alignment structure includes a first surface and a second surface parallel to and facing the first surface with a gap defined therebetween and configured to receive a light-emitting device inside the gap with the first surface and the second surface in contact with the light-emitting device such that, when a collimating rod lens is disposed on the alignment structure and over the gap, a longitudinal center line of the collimating rod lens is not aligned with a mid-point of the gap.

Abstract: The present invention relates to a method and system for repairing and refurbishing a microplate reader of the Flipr type which has a water cooled argon laser light source. The old laser is removed and replaced with a high power (300 to 500 mW) air cooled solid state laser as a replacement place on its own support and focused and wired to replace the old laser. The new product operates at lower power consumption yet provides accurate measurements.

Abstract: A diode-laser having an elongated diode-laser emitter is mounted on a relatively massive heat-sink. Two parallel grooves are machined into the heat-sink to leave a relatively narrow elongated ridge of the heat-sink between the grooves. The ridge has a width about equal to or narrower that the width of the emitter. The diode-laser is mounted on the heat-sink such that thermal communication between the emitter and heat-sink is essentially limited to thermal communication with the ridge.

Abstract: In a laser device, a control range of focal distance of a generated thermal lens is broadened and reliability is improved. A mode control waveguide-type laser device includes: a planar laser medium having a waveguide structure in a thickness direction of a cross section perpendicular to an optical axis, for generating gain with respect to laser light; a cladding bonded onto the laser medium; and a heat sink bonded onto the laser medium. The laser medium generates a lens effect, and the laser light oscillates in a waveguide mode in the thickness direction, and oscillates in a spatial mode due to the lens effect in a direction perpendicular to the optical axis and the thickness direction. The refractive index distribution within the laser medium is created by generating a temperature distribution in the laser medium depending on a junction area of the cladding and the heat sink.

Abstract: By forming upper-bank patterns made of Au with a thickness of 1.5 ?m or larger on bank portions, a solder material on a submount and a surface of a conductive layer in an upper part of a ridge portion of a laser chip are separated so as not to be in contact with each other, thereby preventing the stress generated in a bonding portion when bonding the laser chip and the submount from being applied to the ridge portion.

Abstract: A branched optical isolator includes, located over a substrate, at least two branches connected to a trunk at a junction location. At least one branch comprises an optical absorber material and at least one branch comprises an optical transmitter material. The optical isolator may be incorporated into an optical chip carrier such that: (1) an optical emitting portion of an optical chip integral to or attached to the optical chip carrier; and (2) a connection to the optical isolator, are butt connected with a gap less than 10 nanometers, and otherwise materials matched. The optical isolator provides for attenuated backscattered optical radiation into the optical chip.

Abstract: A light emitting device includes a semiconductor laser, which oscillates in a single longitudinal mode, formed above a semiconductor substrate, a first heater, which controls a temperature of the semiconductor laser, provided near the semiconductor laser, a gain unit, which amplifies a beam outputted from the semiconductor laser and outputs an amplified beam, formed above the semiconductor substrate, a second heater, which controls a temperature of the gain unit, provided near the gain unit, and a second harmonic generation element, which converts the amplified beam outputted from the gain unit to a second harmonic light and outputs the second harmonic light.

Abstract: In a laser module (310), single-emitter laser diode chips (110) are positioned at different heights on opposite sides of the module's combined output beam (114). Each laser diode chip (110), and its corresponding fast and slow axis collimators (130, 134), and turning mirror (140) are positioned on a corresponding heat-dissipating surface region (340). High thermal stability and output power are obtained in some embodiments even if the modules are combined to obtain higher-level modules (310-2). Other features and embodiments are also provided.

Abstract: In a semiconductor laser device, a first lead has a mounting portion for mounting a semiconductor laser element on its top surface via a submount member, and a lead portion extending from the mounting portion. Given that a direction in which a primary beam is emitted from the laser element is defined as a forward direction, and that a direction vertical to the forward direction and parallel to the top surface of the mounting portion is defined as a lateral direction, the first lead has, in one region of a side face of the mounting portion, a lateral reference surface which is parallel to a side face of the semiconductor laser element and flat. In the one region of the side face of the mounting portion, a recess portion is formed adjacent to the lateral reference surface.

Abstract: A laser light-source apparatus according to the present invention is equipped with: a laser-driving circuit board, thermal insulators that are placed on the laser-driving circuit board; a heat receiving plate that is placed on the thermal insulators and thermally insulated from the laser-driving circuit board, a laser light-source module that is installed on the heat receiving plate so as to be thermally connected to the heat receiving plate and is also electrically connected to the laser-driving circuit board so as to be driven thereby, and a heat sink that is thermally connected to the heat receiving plate via a heat pipe.

Abstract: A laser may comprise a ceramic body including a first wall and a second wall opposite the first wall, a first mirror positioned at first ends of the first and second walls, a second mirror positioned at second ends of the first and second walls opposite the first ends, the first and second walls and the first and second mirrors defining a slab laser cavity within the ceramic body. The laser may further comprise a first electrode positioned outside the laser cavity and adjacent to the first wall of the ceramic body and a second electrode positioned outside the laser cavity and adjacent to the second wall of the ceramic body, wherein a laser gas disposed in the laser cavity is excited when an excitation signal is applied to the first and second electrodes. In some embodiments, the first and second mirrors may form a free-space multi-folded resonator in the slab laser cavity. In other embodiments, the first and second mirrors may form a free-space unstable resonator in the slab laser cavity.

Abstract: The invention relates to a semiconductor laser device comprising a laser bar (2), a flexible conductor support (10), a supporting body (3) of a metal or a metal alloy and a heat sink (4), which is arranged between the supporting body (3) and the laser bar (2), the laser bar (2) being electrically contacted by the flexible conductor support (10) and the supporting body (3) having a thickness of at least 2 mm. The invention further relates to a method for producing the above-described semiconductor laser device, wherein a synchronous soldering process is used to solder the laser bar (2) to the heat sink (4) by means of a hard solder layer (30) and the heat sink (4) to the supporting body (3) by means of a further hard solder layer (31).

Abstract: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. One or more first OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the first OE elements positioned in optical alignment with the optical via for receiving the light. A second OE element embedded within the wiring layer. A carrier may be interposed between electrical interconnect elements and positioned between the wiring layer and a circuit board.

Abstract: A wavelength conversion laser light source includes an element temperature switching section that switches a temperature of the wavelength conversion element according to a harmonic wave output value as set in an output setting device, and the element temperature switching section for switching a temperature of a wavelength conversion element according to a harmonic wave output level as set in the output setting device. The element temperature switch section includes an element temperature holding section that holds the wavelength conversion element at the temperature as switched by the element temperature switching section.

Abstract: An electro-optical device includes: an element substrate and an opposing substrate disposed so as to oppose each other; liquid crystals encapsulated and sealed between the two substrates; a display region that displays an image by modulating incident light based on image information; a heat dissipation member disposed opposing a second surface of the element substrate, the second surface being on the opposite side as the opposing substrate; and a thermal conductive member disposed between the element substrate and the heat dissipation member. The dimension from the end portion of where the thermal conductive member and the element substrate make contact with each other to the end portion of the display region on the second surface of the element substrate is greater than the thickness of the element substrate.

Abstract: A heat dissipating member is formed so as to be opposed to a reflection type liquid crystal panel. The heat dissipating member includes a heat receiving portion that is opposed to a reflection type light modulation element and has a heat receiving surface for receiving heat from the element, a heat dissipating fin that dissipates heat received on the heat receiving portion to the outside. The heat receiving portion has heat receiving convexes which project to the side at which the element is arranged from the heat receiving surface, and the convexes are formed such that ratios of areas of tip surfaces of the heat receiving convexes with respect to a unit area are larger on a center portion of a heat reception acceleration region rather than on an end of the heat reception acceleration region.

Abstract: A polarizing apparatus has a thermally conductive partitioning system in a polarizing cell. In the polarizing region, this thermally conductive partitioning system serves to prevent the elevation of the temperature of the polarizing cell where laser light is maximally absorbed to perform the polarizing process. By employing this partitioning system, increases in laser power of factors of ten or more can be beneficially utilized to polarize xenon. Accordingly, the polarizing apparatus and the method of polarizing 129Xe achieves higher rates of production.

Abstract: The semiconductor laser device of the present invention has a structure that allows a cooling medium to be directly fed into heatsink disposed inside package. Besides, the structure ensures that the inside of package is kept at hermetically sealed condition. The structure suppresses temperature rise in semiconductor laser element and package, enhancing the reliability and quality of the semiconductor laser device. At the same time, a high-power semiconductor laser element can be employed.

Abstract: Mount for semiconductor laser devices comprises thermally conductive anode and cathode blocks on either side of semiconductor laser device such as laser diode. Interposed between at least the anode block and the anode of the semiconductor laser device is a sheet of conformable electrically conductive material with high thermal conductivity such as pyrolytic highly-oriented graphite. In some embodiments, a second sheet of such electrically and thermally conductive conformable material is interposed between the cathode of the semiconductor laser device and the cathode block. The semiconductor laser device can be either a single laser diode or a diode bar having a plurality of emitters. A thermally conductive, but electrically insulating, spacer of essentially the same thickness as the laser diode or bar surrounds the diode or bar to prevent mechanical damage while still permitting the conformable material to be maintained in a compressed state and directing current through the laser device.

Abstract: An optical device including: a carrier having a first area and a second area, both edges of the second area having a wall of a step, one edge of the second area being adjacent to the first area, the first area having a first thickness, the second area having a second thickness larger than the first thickness; and a first optical component mounted on the first area of the carrier, the second area of the carrier being an absence area of a component.

Abstract: Included are a first modulator, a second modulator, a first optical amplifier that amplifies an output of the first modulator at an amplification factor based on a first bias signal, a second optical amplifier that amplifies an output of the second modulator at an amplification factor based on a second bias signal, an optical phase adjuster that phase-rotates an output of the second optical amplifier, an optical multiplexer that multiplexes an output of the first optical amplifier with an output of the optical phase adjuster, and a second bias corrector that generates a first pulse signal and a second pulse signal, which are complementary to each other, and obtains a first bias value and a second bias value based on a change of strength of an output signal of the optical multiplexer. The first and second pulse signals are superimposed on the first and second bias signals, respectively.

Abstract: A diode-laser bar stack includes a plurality of diode-laser bars having different temperature dependent peak-emission wavelengths. The stack is arranged such that the bars can be separately powered. This allows one or more of the bars to be “on” while others are “off”. A switching arrangement is described for selectively turning bars on or off, responsive to a signal representative of the temperature of the diode-laser bar stack, for providing a desired total emission spectrum.

Abstract: To obtain a laser light source module, a copper-based material is press-fitted into a through hole formed in a stem made of an iron-based material, thereby forming a first heat sink. A mount made of a copper-based material is fixed to the first heat sink and at least one semiconductor laser device is mounted on the mount. A second heat sink is bonded to lower surfaces of the stem and the first heat sink by a thermal conductive adhesive. An upper surface of the first heat sink is located on a same plane as that of the stem, and a lower surface of the first heat sink is located higher than that of the stem.

Abstract: An internal laser module may be capable of providing a similar high performance as that provided by traditional internally cooled laser modules, but with improved cost efficiency and manufacturability. In the internally cooled laser module, a laser subassembly, such as a coaxial semiconductor laser, may be mounted on a thermoelectric cooler cooler-base with several other components enclosed in a properly designed case.

Abstract: A mount for semiconductor laser devices comprises thermally conductive anode and cathode blocks on either side of a semiconductor laser device such as a laser diode. Interposed between at least the anode block and the anode of the semiconductor laser device is a sheet of conformable material with high thermal conductivity such as pyrolytic highly-oriented graphite. In some embodiments, a second sheet of such thermally conductive conformable material is interposed between the cathode of the semiconductor laser device and the cathode block. The semiconductor laser device can be either a single laser diode or a diode bar having a plurality of emitters. A thermally conductive, but electrically insulating, spacer of essentially the same thickness as the laser diode or bar surrounds the diode or bar to prevent mechanical damage while still permitting the conformable material to be maintained in a compressed state.

Abstract: A surface-emitting laser device is disclosed that includes a substrate connected to a heat sink; a first reflective layer formed of a semiconductor distributed Bragg reflector on the substrate; a first cavity spacer layer formed in contact with the first reflective layer; an active layer formed in contact with the first cavity spacer layer; a second cavity spacer layer formed in contact with the active layer; and a second reflective layer formed of a semiconductor distributed Bragg reflector in contact with the second cavity spacer layer. The first cavity spacer layer includes a semiconductor material having a thermal conductivity greater than the thermal conductivity of a semiconductor material forming the second cavity spacer layer.

Abstract: The present embodiment provides a thin disk laser disk element having improved direct cooling through the use of a barrier material directly attached to the high reflectivity layer of the thin disk element. This barrier is needed due to noticeable degradation of the reflectivity of the thin disk element without the barrier material. A barrier material of sapphire (crystalline Al2O3) is preferable, given a desire to have adequate thermal conductivity through the barrier material, proper matching of the coefficient of thermal expansion with the other components of the thin disk, and to save monetary costs. In another preferred embodiment, an intermediate layer is interposed between the thin disk element and the barrier material to provide improved adhesion between the barrier material and the thin disk element. Preferred crystallographic orientations for sapphire barrier material are provided as well.

Abstract: Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package.

Abstract: The present invention concerns new designs of VCLs with high contrast gratings (HCG) combined with diamond layer as a bottom mirror. They can be realized either with a classical V-shaped pumping scenario, or through the introduction of the pumping beam from the bottom direction, through the HCG that can be designed to be transparent at the wavelength of the pumping light. They can also be completed by a HCG combined with diamond layer as top mirror, reflecting the pump diode laser and transparent to the VCL emission in the case the pumped and emitted beams are collinear.

Abstract: A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.