Abstract: A packaging method for forming a conduction cooled package (CCP) laser is provided and includes soldering a semiconductor laser device on the first heat spreader; and then bonding the first heat spreader on the second spreader via an Al/Ni nano-laminated foil. Moreover, a CCP laser is also provided herein.

Abstract: A device to be positioned between a heat source and a heat sink may transform infrared electromagnetic (IR-EM) energy exchanged therebetween from a first form to a second form. The device may include a pair of layers facing each other and having dielectric material with molecular excitability characteristics to produce the second form of IR-EM energy. The pair of layers may define a gap therebetween. The device may include a conversion circuit configured to convert the second form of IR-EM energy into electrical energy.

Abstract: An optical transmitter includes a light source that outputs light superposed with a pilot signal having a predetermined frequency; an optical modulating unit that modulates the light from the light source according to an input electric signal; a detecting unit that detects a high-output-side maximum value of signal light output from the optical modulating unit, a fluctuation width of the high-output-side maximum value, and a fluctuation width of a low-output-side minimum value; a bias-potential adjusting unit that adjusts a bias potential of an electric signal to be input to the optical modulating unit based on the detected maximum value; and an amplitude adjusting unit that adjusts an amplitude of the electric signal to be input to the optical modulating unit based on the fluctuation width of the high-output-side maximum value and the fluctuation width of the low-output-side minimum value.

Abstract: A beam alignment chamber extending in a length direction comprising a base having a front edge, and two side edges, first and second opposed side walls connected to the base, and extending along the length of the base, a front wall located at the front edge of the base having an output opening. The beam alignment chamber further comprises a plurality of arrays of light sources disposed to direct light beams through the first or second side walls, and a plurality of reflectors mounted on the base, each having independent yaw and pitch adjustments, each reflector being paired with a corresponding array of light sources, the base-mounted reflectors being disposed to direct the light beams along the length of the beam alignment chamber through the output opening forming an aligned two-dimensional array of parallel light beams.

Abstract: A photonic system and method are provided. The system includes an optical source configured to generate a carrier signal; and a modulator configured to modulate the carrier signal with a radio frequency, (“RF”) input signal to generate a modulated signal. The system also includes an optical filter configured to filter the modulated signal to generate a vestigial sideband modulated signal; and an optical detector configured to demodulate the vestigial sideband signal to generate an RF output signal. The system further includes a wavelength controller module configured to set an operating parameter of the optical source.

Abstract: A wavelength conversion structure includes a light guide formed of a light-transmissive member having a laser light incident port that allows the laser light to be introduced and a phosphor-containing layer that covers at least part of the surface of the light guide. The light guide has a light diffusing structure having asperities formed over the surface of the light guide except a laser light incident surface having the laser light incident port and a light reflecting film formed over the surface of the light guide along the asperities except the laser light incident port and the portion covered with the phosphor-containing layer.

Abstract: A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a submount 63 having, mounted on a front part thereof, the two-beam semiconductor laser element LDC with the light-emitting face thereof directed forward and having a first and a second electrode pads 64 and 65 connected to electrodes 61 and 62 of the first and second semiconductor laser element LD1 and LD2 by being kept in contact therewith. The first and second electrode pads 64 and 65 are formed to extend farther behind the two-beam semiconductor laser element LDC, and wires 14 and 16 are wire-bonded behind the two-beam semiconductor laser element LDC.

Abstract: A laser light source apparatus includes a first laser array light source that emits first-wavelength light, and a second laser array light source that emits second-wavelength light, the second wavelength being different from the first wavelength. The first laser array light source includes a first fundamental wave laser array that produces first fundamental wave light having a first original wavelength, and a first wavelength conversion element that wavelength-converts the first fundamental wave light into the first-wavelength light. The second laser array light source includes a second fundamental wave laser array that produces second fundamental wave light having a second original wavelength different from the first original wavelength, and a second wavelength conversion element that wavelength-converts the second fundamental wave light into the second-wavelength light.

Abstract: A dual wavelength laser device including a cap, a header, a first laser chip and a second laser chip. The cap includes a cap body and a lens embedded on the cap body. The header forms an accommodating space with the cap. The first laser chip is arranged in the accommodating space and emitting a first laser beam toward the lens. The second laser chip is arranged in the accommodating space and emitting a second laser beam toward the lens.

Abstract: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. One or more first OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the first OE elements positioned in optical alignment with the optical via for receiving the light. A second OE element embedded within the wiring layer. A carrier may be interposed between electrical interconnect elements and positioned between the wiring layer and a circuit board.

Abstract: An optical device including: a carrier having a first area and a second area, both edges of the second area having a wall of a step, one edge of the second area being adjacent to the first area, the first area having a first thickness, the second area having a second thickness larger than the first thickness; and a first optical component mounted on the first area of the carrier, the second area of the carrier being an absence area of a component.

Abstract: An optical semiconductor device has a semiconductor substrate, an optical semiconductor region and a heater. The optical semiconductor region is provided on the semiconductor substrate and has a width smaller than that of the semiconductor substrate. The heater is provided on the optical semiconductor region. The optical semiconductor region has a cladding region, an optical waveguide layer and a low thermal conductivity layer. The optical waveguide layer is provided in the cladding region and has a refractive index higher than that of the cladding region. The low thermal conductivity layer is provided between the optical waveguide layer and the semiconductor substrate and has a thermal conductivity lower than that of the cladding region.

Abstract: A heat sink enabled to prevent structural deterioration of an inner wall of a flow channel caused by corrosion a semiconductor laser device are provided. The heat sink includes a main body, a flow channel which is provided in the main body, and inside which a cooling medium passes through, and a passivation film covering an inner-wall surface of the flow channel.

Abstract: Circuit arrangements for the operation of a pulse laser diode and methods for operating a pulse laser diode include a current source to supply a direct current to the pulse laser diode. The circuit arrangement can provide operation of the pulse laser diode that can be stable and without unintentional shifts in wavelength.

Abstract: One embodiment of the present invention provides a system that facilitates adjusting the wavelengths of lasers via temperature control. This system includes a chip with an active face upon which active circuitry and signal pads reside. A thermal-control mechanism provides localized thermal control of two lasers mounted upon the active face of the chip. By individually controlling the temperature of the lasers, the thermal-control mechanism controls the wavelengths emitted by each respective laser. By creating a temperature gradient that causes a temperature difference between two or more lasers, the system can cause the lasers to emit different wavelengths.

Abstract: A semiconductor laser module includes a semiconductor laser section, a light selecting section, and an optical converting section. The semiconductor laser section includes a semiconductor laser substrate, a plurality of semiconductor laser elements mounted on the semiconductor laser substrate, and a first temperature adjusting element for adjusting temperature of the semiconductor laser elements. The light selecting section includes a light selecting element substrate and a light selecting element mounted on the light selecting element substrate and optically connected to the semiconductor laser elements, which selects laser light output from at least one of the semiconductor laser elements.

Abstract: A heat spreader for an LED can include a thermally conductive and optically transparent member. The bottom side of the heat spreader can be configured to attach to a light emitting side of the LED. The top and/or bottom surface of the heat spreader can have a phosphor layer formed thereon. The heat spreader can be configured to conduct heat from the LED to a package. The heat spreader can be configured to conduct heat from the phosphors to the package. By facilitating the removal of heat from the LED and phosphors, more current can be used to drive the LED. The use of more current facilitates the construction of a brighter LED, which can be used in applications such as flashlights, displays, and general illumination. By facilitating the removal of heat from the phosphors, desired colors can be better provided.

Abstract: A light emitting apparatus includes a surface emitting laser and a ceramic package. The surface emitting laser has a common electrode on the back surface thereof and is mounted on the ceramic package via the common electrode. The common electrode of the surface emitting laser is electrically connected to a mount portion of the ceramic package. The mount portion is electrically connected to a back-surface electrode on the back surface of the ceramic package. The mount portion is also thermally connected to a back-surface heat-dissipating electrode on the back surface of the ceramic package via a penetrating electrode that penetrates the ceramic package. The surface emitting laser is spaced apart from the penetrating electrode in order to prevent inclination in light-emitted direction. The back-surface heat-dissipating electrode prevents destruction of a soldered portion when the light emitting apparatus is mounted on a substrate by soldering.

Abstract: To achieve a solid-state laser element capable of outputting a high-power laser, in a planar waveguide type solid-state laser element that causes a plurality of fundamental laser beams to oscillate in a direction of an optic axis within a flat plate-like laser medium, and forms a waveguide structure in a thickness direction of the laser medium, which is a direction perpendicular to a principal surface of the flat plate-like laser medium, the laser medium is separated in a principal-surface width direction of the laser medium, which is a direction perpendicular to the direction of the optic axis and the thickness direction of the laser medium, by a groove extending in the direction of the optic axis within the laser medium.

Abstract: A circuit controlling the gain of an amplifier in an optical transmitter used for optical communication, including a detection circuit for measuring the power of the RF input to a laser; a gain controller or controlling a gain of an amplifier, and a switch connected to the gain controller, wherein the gain controller is adapted, in response to an activation of a switch, to: (i) automatically vary gain of the amplifier, and (ii) set the gain of the amplifier at a level corresponding to a reduction in the noise and/or distortion associated with the transmitter.

Abstract: A submount for a semiconductor laser. The submount has a layer of silicon carbide (SiC) and a layer of aluminum nitride (AlN) deposited on the layer of SiC. The submount is bonded to the InP-based laser by a hard solder applied to the AlN layer. Preferably, the thickness of the AlN layer is ten to twenty microns, the thickness of the SiC layer is two hundred fifty microns, and the solder is a gold-tin (AuSn) eutectic. The semiconductor laser may be a quantum cascade laser (QCL). Similar combinations of submount materials can be found for other semiconductor laser material systems and types.

Abstract: A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Abstract: A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Abstract: A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.

Abstract: A wavelength conversion laser light source includes: an element temperature switching section that switches a temperature of the wavelength conversion element according to a harmonic wave output value as set in an output setting device, and the element temperature switching section for switching a temperature of a wavelength conversion element according to a harmonic wave output level as set in the output setting device, wherein the element temperature switch section includes an element temperature holding section that holds the wavelength conversion element at the temperature as switched by the element temperature switching section.

Abstract: A compact mid-IR laser device utilizes a quantum cascade laser to provide mid-IR frequencies suitable for use in molecular detection by signature absorption spectra. The compact nature of the device is obtained owing to an efficient heat transfer structure, the use of a small diameter aspheric lens and a monolithic assembly structure to hold the optical elements in a fixed position relative to one another. Efficient heat transfer is achieved using a thermoelectric cooler TEC combined with a high thermal conductivity heat spreader onto which the quantum cascade laser is thermally coupled. The heat spreader not only serves to dissipate heat and conduct same to the TEC, but also serves as an optical platform to secure the optical elements within the housing in a fixed relationship relative on one another.

Abstract: The present invention relates to a nitride semiconductor laser device having a structure in which two or more of nitride semiconductor laser elements, having at least a first electrode on a first main surface of a first conductive type conductive substrate, having at least a first conductive type nitride semiconductor layer, an active layer, a second conductive type nitride semiconductor layer, and a second electrode on a second main surface of the conductive substrate, and having a stripe-waveguide structure parallel to the first main surface, are arranged in a direction parallel to the first main surface and a direction perpendicular to the direction of light that is emitted from the stripe waveguide structure in the nitride semiconductor laser device, and the first sub-mount and the first electrode of the nitride semiconductor laser element are electrically and heat-conductively connected, and the second sub-mount and the second electrode of the nitride semiconductor laser element are electrically and heat

Abstract: A TO-can header assembly is provided that has improved heat dissipation and thermal resistance characteristics. The TO-can header assembly includes a relatively large ceramic heat dissipation block that functions as both a carrier for the laser diode and as a heat dissipation device. The ceramic heat dissipation block is in contact with the upper mounting surface of the header to allow a relatively large amount of heat to quickly pass from the laser diode through the heat dissipation block and into the upper mounting surface of the header. The cylindrical side wall of the header is smooth, rather than notched, and at least a substantial portion of the smooth cylindrical side wall is in continuous contact with an external heat sink device. Heat moves rapidly from the header into the external heat sink device where it is dissipated, thereby reducing the thermal resistance of the header.

Abstract: A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Abstract: The present invention relates to a surface-emitting semiconductor laser having a vertical resonator, comprising a substrate base section (1) and a mesa (M) arranged on and/or at the substrate base section, the mesa substantially comprising, viewed perpendicular to the substrate base section: at least one part of a first doting region (2) facing the substrate base section, at least one part of a second doping region (4) facing away from the substrate base section, and an active region (3) arranged between the first and the second doping regions, said active region having at least one active layer (A) with a laser-emitting zone, emitting substantially perpendicular to the active layer, characterized in that the mesa (M) comprises in at least one partial section of the side flank thereof at least one constriction (E).

Abstract: A projector includes a housing, a projection lens, a receiving member, an optical engine, a light source module, a heat sink, and a fan. The housing includes a bottom wall and four sidewalls, the bottom wall and the four sidewalls together define a receiving space. One of the sidewalls a number of first vents, the other three sidewalls define a number of second vents. The projection lens is located at an intersecting corner of the sidewalls. The receiving member includes a first receiving portion and a second receiving portion. The optical engine is received in the second receiving portion. The light source module is received in the first receiving portion. The heat sink is located at an intersecting corner of the sidewalls. The fan is located at an intersecting corner of the sidewalls.

Abstract: Laser diodes (120) emit laser beams along a vertical YZ plane at different distances from the YZ plane. The beams are collimated in their fast and slow axes, and are redirected by turning mirrors (162) to form a beam stack (130C) traveling along the XZ plane. The beam stack is turned by about 90°, then converged by a focusing lens (174) into an optical fiber (180). A compact assembly is thus provided. Each laser diode (120.i), its collimating optics (154.i, 158.i, i=1, 2, . . . ) and its turning mirror (162.i) are rigidly attached to a flat, heat-spreading surface (144.i) and thus remain aligned with each other in thermal cycling.

Abstract: A laser light-source apparatus according to the present invention is equipped with: a laser-driving circuit board, thermal insulators that are placed on the laser-driving circuit board; a heat receiving plate that is placed on the thermal insulators and thermally insulated from the laser-driving circuit board, a laser light-source module that is installed on the heat receiving plate so as to be thermally connected to the heat receiving plate and is also electrically connected to the laser-driving circuit board so as to be driven thereby, and a heat sink that is thermally connected to the heat receiving plate via a heat pipe.

Abstract: A high-powered diffraction limited diode pumped solid-state source optically end pumps a compact, widely tunable solid state material. Imaging of the collimated pump beam into the tunable medium produces ideal volumetric overlap producing high conversion efficiencies. Fully integrated pump source provides pump energy at or near the peak absorption wavelength. Birefringent elements placed intracavity are used for linewidth narrowing and tuning of the laser wavelength. Tunable active medium is placed in linear cavity arrangement utilizing a confocal or hemispherical arrangement. Mode waist is minimized in crystal such that there is optimal overlap with pump source while simultaneously maximizing extraction efficiency.

Abstract: A vertical cavity surface emitting laser (VCSEL) includes a semiconductor substrate, a lower reflecting mirror formed on the semiconductor substrate, and a mesa structure. The mesa structure includes an active layer, a selective oxidization layer that includes a current confined structure, and an upper reflecting mirror. A lower electrode is connected to the semiconductor substrate, and an upper electrode is connected to the upper reflecting mirror. The VCSEL emits laser light perpendicularly to the plane of the semiconductor substrate when an electric current flows between the upper electrode and the lower electrode. The semiconductor substrate is inclined with respect to (100) plane. The active layer includes a quantum well layer having a compressive strain with respect to the substrate, and a spacer layer. The spacer layer has either a compressive strain or a tensile strain with respect to the semiconductor substrate.

Abstract: A cut-out portion of a ground conductor is located in a region where a header faces a flexible board from the junction of a signal pin and a signal line and faces the signal line. The size of the cut-out portion is determined so that the impedance of the signal pin is matched to the impedance of the signal line.

Abstract: A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Abstract: A compact mid-IR laser device utilizes a quantum cascade laser to provide mid-IR frequencies suitable for use in molecular detection by signature absorption spectra. The compact nature of the device is obtained owing to an efficient heat transfer structure, the use of a small diameter aspheric lens and a monolithic assembly structure to hold the optical elements in a fixed position relative to one another. The compact housing size may be approximately 20 cm×20 cm×20 cm or less. Efficient heat transfer is achieved using a thermoelectric cooler TEC combined with a high thermal conductivity heat spreader onto which the quantum cascade laser is thermally coupled. The heat spreader not only serves to dissipate heat and conduct same to the TEC, but also serves as an optical platform to secure the optical elements within the housing in a fixed relationship relative on one another.

Abstract: A compact semiconductor laser pumped solid-state laser device is provided that can suppress unnecessary parasitic oscillation in a microchip and efficiently extract energy.

Abstract: A VCSEL array device formed of a monolithic array of raised VCSELs on an electrical contact and raised inactive regions connected to the electrical contact. The VCSELs can be spaced symmetrically or asymmetrically, in a manner to improve power or speed, or in phase and in parallel. The VCSELs include an active region positioned between two mirrors generating a pulsed light operating at a frequency of at least 1 GHz. The VCSELs having an output power of at least 120 mW. The raised VCSELs and raised inactive regions are positioned between the electrical contact and an electrical waveguide.

Abstract: Systems and methods for controlling a thermoelectric cooler (TEC) in an optical transceiver. A TEC system includes a processor that interacts with a power supply and a TEC controller to prevent inrush current. The power supply is switched by the processor and turned on only at a particular time. The power supply has a relatively large time constant such that it ramps slowly to its full value. In the meantime, the processor and TEC controller cause the temperature to ramp to a target value by repeatedly incrementing or decrementing a target value over time and by controlling when the maximum available voltage can be applied to the TEC.

Abstract: A laser light source includes: a laser array in which plural emitters are arranged; and a submount having first and second surfaces facing in opposite directions. The laser array is provided on the first surface. A distance between the first surface and the second surface of the submount varies along an array arrangement direction of the laser array.

Abstract: A laser light source apparatus includes a laser light source; a heat exchanger that includes a plurality of cooling fins and that cools the laser light source; a driving circuit that drives the laser light source; a housing including an intake port and an exhaust port; and an air-cooling fan that is attached to the housing and that discharges air taken in from the intake port to the exhaust port. The cooling fins are arranged at a position opposed to the intake port to be stacked up on each other at predetermined intervals and a pitch between the cooling fins is equal to or less than a minimum width of the intake port.

Abstract: A laser pump cavity includes a heat sink holder with a central through hole, a plurality of slot portions, and a plurality of single emitters. The single emitter includes a heat sink and a single core disposed on the heat sink. The slot portions are uniformly spaced and surround the through hole. The single emitters are connected end to end, thereby forming at least one single emitter array. The at least one single emitter array is disposed in corresponding slot portions with each single core facing the through hole.

Abstract: The invention relates, among other things, to a method for the assembly of a semiconductor component, wherein the semiconductor component on mutually opposing sides is joined in a first and a second bonded connection with a heat-conducting body each. For this purpose, the heat-conducting bodies are joined in a third bonded connection in the region of the sections thereof extending away from the semiconductor element, wherein a spacer, which with regard to the third connection is disposed on the opposite side of the semiconductor component between the heat-conducting bodies, in conjunction with the requirement that the joining zone thickness of the third connection is greater than that of the first or the second joining zone, ensures that defined joining zone thicknesses in the bonded connection are maintained during the joining process.

Abstract: An optical transmitter is disclosed having a temperature stabilization system for an optical filter for maintaining constant the frequency response of the filter. The filter is mounted within a housing having a substantially higher thermal conductivity. The housing may include a copper-tungsten alloy and extend along the optical axis of the filter. The housing is in thermal contact with a thermo-electric cooler (TEC) and a temperature sensor. The TEC and temperature sensor are electrically coupled to a controller which adjusts the temperature of the TEC according to the output of the temperature sensor.

Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

Abstract: A digital image projector includes a light assembly configured to project light along a light path from at least one laser array light source, the projected light having an overlapping far field illumination in a far field illumination portion of the light path; a temporally varying optical phase shifting device configured to be in the light path; an optical integrator configured to be in the light path; a spatial light modulator located downstream of the temporally varying optical phase shifting device and the optical integrator in the light path, the spatial light modulator configured to be located in the far field illumination portion of the light path; and projection optics located downstream of the spatial light modulator in the light path, the projection optics configured to direct substantially speckle free light from the spatial light modulator toward a display surface.

Abstract: A laser diode package includes a laser diode, a cooler, and a metallization layer. The laser diode is used for converting electrical energy to optical energy. The cooler receives and routes a coolant from a cooling source via internal channels. The cooler includes a plurality of ceramic sheets and a highly thermally-conductive sheet. The ceramic sheets are fused together and the thermally-conductive sheet is attached to a top ceramic sheet of the plurality of ceramic sheets. The metallization layer has at least a portion on the thermally-conductive sheet. The portion is electrically coupled to the laser diode for conducting the electrical energy to the laser diode.

Abstract: A system for self-aligning assembly and packaging of semiconductor lasers allows reduction of time, cost and testing expenses for high power density systems. A laser package mounting system, such as a modified TO-can (transistor outline can), has modifications that increase heat transfer from the active laser to a heat exchanger or other heat sink. A prefabricated heat exchanger assembly mounts both a laser package and one or more lenses. Direct mounting of a fan assembly to the package further minimizes assembly steps. Components may be physically and optically aligned during assembly by clocking and other indexing means, so that the entire system is self-aligned and focused by the assembly process without requiring post-assembly adjustment. This system can lower costs and thereby enable the use of high powered semiconductor lasers in low cost, high volume production, such as consumer items.