Abstract: A light-emitting diode 100 includes a first region 1, for example of the P type, formed in a first layer 10 and forming, in a direction normal to a basal plane, a stack with a second region 2 having at least one quantum well formed in a second layer 20, and including a third region 3, for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions 1, 2, through the first and second layers 10, 20. A process for producing a light-emitting diode 100 in which the third region 3 is formed by implantation into and through the first and second layers 10, 20.

Abstract: A vertical current mode solid state device comprising a connection pad and side walls comprising a metal-insulator-semiconductor (MIS) structure, wherein leakage current effect of the vertical device is limited through the side walls by biasing the MIS structure.

Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

Abstract: This document describes techniques and systems to alternate power-level scanning for ToF lidar systems. The described lidar system transmits an initial signal having a first power level of an alternating pattern of power levels. The initial signal is associated with an initial pixel of consecutive pixels. The lidar system then transmits a subsequent signal, which is associated with a subsequent pixel of the consecutive pixels, having a second power level. The transmission of the initial signal and the subsequent signal with the alternating pattern of power levels limits a total power level emitted by the lidar system during a time interval to comply with safety regulations. The alternating pattern of power levels also permits the lidar system to switch between a long-detection range and a short-detection range for consecutive pixels.

Abstract: The present invention relates to a test sample receiving block and a microbial detection apparatus using the same. The test sample receiving block may include a sample receiving block having a sample groove portion formed therein, the sample groove portion containing the sample so that a light emission module emits light to the sample and a sensor module can detect a speckle generated when the emitted light is scattered by motion of bacteria or microbes contained in the sample, wherein the sample receiving block is surface-treated to increase an optical path of light reaching the sensor module when the emitted light is reflected or scattered by the sample accommodated in the sample groove portion, so that a pattern is formed on a surface of the sample groove portion.

Abstract: A laser chip including a plurality of stripes is disclosed, where a laser stripe can be grown with an initial optical gain profile, and its optical gain profile can be shifted by using an intermixing process. In this manner, multiple laser stripes can be formed on the same laser chip from the same epitaxial wafer, where at least one laser stripe can have an optical gain profile shifted relative to another laser stripe. For example, each laser stripe can have a shifted optical gain profile relative to its neighboring laser stripe, thereby each laser stripe can emit light with a different range of wavelengths. The laser chip can emit light across a wide range of wavelengths. Examples of the disclosure further includes different regions of a given laser stripe having different intermixing amounts.

Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

Abstract: A light emitting device includes a substrate, a laminated body formed by stacking a first cladding layer, a first active layer, a second cladding layer, a third cladding layer, a second active layer, and a fourth cladding layer on the substrate in this order, a first electrode connected to the first cladding layer, a second electrode connected to the second cladding layer and the third cladding layer, and a third electrode connected to the fourth cladding layer, the first active layer generates first light using the first electrode and the second electrode, the second active layer generates second light using the second electrode and the third electrode, and a side surface of the first active layer is provided with an emitting section for emitting the first light, and a side surface of the second active layer is provided with an emitting section for emitting the second light.

Abstract: The present technology relates to a fast and efficient heating element based on a thick heterostructure which is monolithically integrated in close proximity to one or more components of a photonic or an electronic circuit. Inventive embodiments also relate to methods of use illustrative heating elements to control or tune the characteristics of the electronic or photonic component(s). Inventive embodiments may be particularly useful in the fast spectral tuning of the emission wavelength of single mode QCLs.

Abstract: A method of manufacturing a surface-emitting laser element having a light-emitting mesa structure with an emitting area including a high-reflectance portion and a low-reflectance portion includes forming a layered body that includes a lower reflecting mirror, a cavity structure, and an upper reflecting mirror on a substrate; forming a first area on an upper surface of the layered body; forming a second area having the same size as the first area on the upper surface of the layered body; forming a light-emitting mesa structure and a monitoring-mesa structure by etching the first area and the second area, respectively; forming a confinement structure including a current passage area surrounded by an oxide in the light-emitting mesa structure and the monitoring-mesa structure; and measuring the size of the current passage area of the monitoring-mesa structure.

Abstract: A wavelength-tunable light source includes light sources having differing variable wavelength regions, where light sources having adjacent wavelength regions are distributed to different systems. The light sources are each set such that an end portion of the variable wavelength region of the light source overlaps an end portion of the variable wavelength region of another light source. A control unit selects and drives a first light source of a first system, varies a wavelength of the first light source, selects a second light source that is of a second system among the different systems and that has a wavelength region overlapping the variable wavelength region of the first light source, drives the second light source concurrently with the first light source and subsequently switches to the output light of the second light source, causing wavelength variation and executing continuous wavelength variation over a wide range.

Abstract: A transmitter is disclosed including a laser array comprising a plurality of lasers spatially offset from one another and each having a laser output having a unique wavelength. A first prism is positioned to impart a first angular shift to the laser outputs to produce and a second prism is positioned to impart a second angular shift opposite the first angular shift on the outputs. An index modulating element is coupled to one of the first and second prisms and a controller is electrically coupled to the index modulating element to control an angle of light output form the second prism. An optical spectrum reshaper may be positioned between the second prism and the lens and have at least one transmission edge aligned with the wavelength at least one of the lasers.

Abstract: A laser source assembly for providing an assembly output beam includes a first emitter, a second emitter, and a third emitter. The first emitter emits a first beam along a first beam axis that is substantially parallel to and spaced apart from an assembly axis. The second emitter emits a second beam along a second beam axis that is substantially parallel to and spaced apart from the assembly axis. The third emitter emits a third beam along a third beam axis that is substantially parallel to and spaced apart from the assembly axis. The first beam axis, the second beam axis and the third beam axis are positioned spaced apart about and substantially equidistant from the assembly axis.

Abstract: In this semiconductor laser apparatus, a first wire-bonding portion is arranged at a position in a fourth direction from a first semiconductor laser device and in a first direction from a photodetector, and a second wire-bonding portion is arranged at a position in the fourth direction from the first semiconductor laser device and in a third direction from the first wire-bonding portion. A third wire-bonding portion is arranged at a position in a second direction from a third semiconductor laser device and in the first direction from the photodetector, and a fourth wire-bonding portion is arranged at a position in the second direction from the third semiconductor laser device and in the third direction from the third wire-bonding portion.

Abstract: Vertical Cavity Surface Emitting Laser (VCSEL) arrays with vias for electrical connection are disclosed. A Vertical Cavity Surface Emitting Laser (VCSEL) array in accordance with one or more embodiments of the present invention comprises a plurality of first mirrors, a plurality of second mirrors, a plurality of active regions, coupled between the plurality of first mirrors and the plurality of second mirrors, and a heatsink, thermally and mechanically coupled to the second mirror opposite the plurality of active regions, wherein an electrical path to at least one of the plurality of second mirrors is made through a via formed through a depth of the plurality of second mirrors, and a plurality of VCSELs in the VCSEL array are connected in series.

Abstract: A diode-laser bar stack includes a plurality of diode-laser bars having different temperature dependent peak-emission wavelengths. The stack is arranged such that the bars can be separately powered. This allows one or more of the bars to be “on” while others are “off”. A switching arrangement is described for selectively turning bars on or off, responsive to a signal representative of the temperature of the diode-laser bar stack, for providing a desired total emission spectrum.

Abstract: A laser diode includes: a plurality of strip-shaped laser structures arranged in parallel with each other, and including a lower cladding layer, an active layer, and an upper cladding layer in this order; a plurality of strip-shaped upper electrodes singly formed on a top face of the respective laser structures, and being electrically connected to the upper cladding layer; a plurality of wiring layers being at least singly and electrically connected to one of the respective upper electrodes; and a plurality of pad electrodes formed in a region different from that of the plurality of laser structures, and being electrically connected to one of the respective upper electrodes with the wiring layer in between. The respective wiring layers have an end in a region different from a region where the respective wiring layers are contacted with the upper electrode.

Abstract: The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other.

Abstract: The present invention is directed to a semiconductor laser device comprising a first resonator section for resonating an optical resonator signal for providing an optical output signal at an output of said laser device, wherein said first resonator section is arranged for selectively resonating at a plurality of discrete output wavelengths, and wherein said laser device further comprises a second resonator section operatively connected to said first resonator section, said second resonator section being arranged for providing an optical feedback signal at a feedback wavelength to said first resonator section for locking said first resonator section into resonating at a selected output wavelength of said discrete output wavelengths, which selected output wavelength corresponds to said feedback wavelength for providing said optical output signal.

Abstract: A parallel optical transceiver module is provided that has a balanced laser driver arrangement. The balanced laser driver arrangement of the invention includes at least two laser diode driver ICs, which preferably are located on opposite sides of a laser diode IC. Each laser diode driver IC drives a subset (e.g., half) of the total number of laser diodes of the laser diode IC. Because each laser diode driver IC drives a subset of the total number of laser diodes of the laser diode IC, the pitch (i.e., distance) between the high-speed signal pathways within the laser diode driver ICs can be increased. Increasing the pitch between the high-speed signal pathways provides several advantages, including, for example, reducing the potential for electrical cross-talk and inductive coupling between adjacent wire bonds that connect the output driver pads on the driver IC to the respective input pads on the laser diode IC.

Abstract: A device for providing laser-based dermatological treatments may include a device body having an application end, a VCSEL laser supported in the device body and including multiple emitter zones, each emitter zone comprising one or more micro-emitters, each micro-emitter configured to emit a micro-beam, wherein at least two of the multiple emitter zones are configured such that the micro-beam emitted by the micro-emitters of the at least two emitter zones form a combined beam through the application end of the device to provide a treatment spot on the skin, and electronics coupled to the at least two emitter zones and configured to control the at least two emitter zones independently.

Abstract: An array of Surface Emitting Laser (SEL) elements can be used to efficiently pump a disk or rod of solid-state laser glass or crystal, or harmonic-generating crystal. Placing the laser array chip against or near the surface of this solid-state material provides very high and uniform optical power density without the need for lenses or fiber-optics to conduct the light from typical edge-emitting lasers, usually formed in a stack of bars. The lasers can operate in multi-mode output for highest output powers. Photolithography allows for an infinite variety of connection patterns of sub-groups of lasers within the array, allowing for spatial contouring of the optical pumping power across the face of the solid-state material. The solid-state material may be pumped either within (intra-cavity) or externally (extra-cavity) to the SEL laser array.

Abstract: A diode-laser bar stack includes a plurality of diode-laser bars having different temperature dependent peak-emission wavelengths. The stack is arranged such that the bars can be separately powered. This allows one or more of the bars to be “on” while others are “off”. A switching arrangement is described for selectively turning bars on or off, responsive to a signal representative of the temperature of the diode-laser bar stack, for providing a desired total emission spectrum.

Abstract: A laser diode package includes a laser diode, a cooler, and control circuitry, such as an integrated circuit. The laser diode is used for converting electrical energy to optical energy. The cooler receives and routes a coolant from a cooling source via internal channels. The cooler includes a plurality of ceramic sheets. The ceramic sheets are fused together. The ceramic sheets include traces or vias that provide electrically conductive paths to the integrated circuit. The control circuitry controls the output of the laser diode, e.g. the output at each of the laser diode's emitters. Multiple laser diode packages are placed together to form an array.

Abstract: A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a submount 63 having, mounted on a front part thereof, the two-beam semiconductor laser element LDC with the light-emitting face thereof directed forward and having a first and a second electrode pads 64 and 65 connected to electrodes 61 and 62 of the first and second semiconductor laser element LD1 and LD2 by being kept in contact therewith. The first and second electrode pads 64 and 65 are formed to extend farther behind the two-beam semiconductor laser element LDC, and wires 14 and 16 are wire-bonded behind the two-beam semiconductor laser element LDC.

Abstract: Electrophotographic print system, comprising a photosensitive medium, and a laser array being provided with a plurality of laser diodes arranged to emit light onto the photosensitive medium for varying an electrical potential on a surface of the photosensitive medium, and a plurality of heat dissipation diodes, each heat dissipation diode being arranged in proximity to a corresponding laser diode, wherein each laser diode and the corresponding heat dissipation diode are coupled to a common drive circuit and are arranged in opposite current flow directions with respect to each other, so that in use the current flows either through the laser diode or through the heat dissipation diode depending on the current flow direction in the drive circuit.

Abstract: A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes.

Abstract: A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.

Abstract: A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a submount 63 having, mounted on a front part thereof, the two-beam semiconductor laser element LDC with the light-emitting face thereof directed forward and having a first and a second electrode pads 64 and 65 connected to electrodes 61 and 62 of the first and second semiconductor laser element LD1 and LD2 by being kept in contact therewith. The first and second electrode pads 64 and 65 are formed to extend farther behind the two-beam semiconductor laser element LDC, and wires 14 and 16 are wire-bonded behind the two-beam semiconductor laser element LDC.

Abstract: A dual wavelength laser device including a cap, a header, a first laser chip and a second laser chip. The cap includes a cap body and a lens embedded on the cap body. The header forms an accommodating space with the cap. The first laser chip is arranged in the accommodating space and emitting a first laser beam toward the lens. The second laser chip is arranged in the accommodating space and emitting a second laser beam toward the lens.

Abstract: A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a ?/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

Abstract: A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad electrode and an n-side electrode. The p-side pad electrode and n-side electrode of the first semiconductor laser device are electrically isolated from the package body. The p-side pad electrode of the first semiconductor laser device is connected with a drive circuit that generates a positive potential, while the n-side electrode thereof is connected with a dc power supply that generates a negative potential.

Abstract: An imaging device comprising a linear array of laser diodes that are adapted to provide an optical output comprising a plurality of spaced-apart optical beams. Focusing optics are configured to form a plurality of image points from said spaced-apart optical beams, the image points being spaced apart along a first axis. The image points have a non-uniform spacing along the first axis. By scanning the linear array along a photosensitive plate, and timing the firing of lasers accordingly, every pixel point on the photosensitive plate can be imaged by one of the image points from the laser array. Non-uniform spacing of the image points can provide advantages in heat dissipation from the laser elements, and reduction of some printing artifacts on the photosensitive plate.

Abstract: A tunable distributed feedback semiconductor laser includes a substrate; an optical waveguide structure disposed on a main surface of the substrate and including an active layer and a diffraction grating, the optical waveguide structure being divided into a first DFB portion, a wavelength-tuning region, and a second DFB portion in that order; a first electrode for injecting carriers into the active layer in the first DFB portion; a second electrode for injecting carriers into the active layer in the second DFB portion; and a third electrode for supplying a wavelength tuning signal to the wavelength-tuning region. The diffraction grating extends over the first DFB portion, the wavelength-tuning region, and the second DFB portion. An optical confinement factor of the wavelength-tuning region is smaller than that of the first and second DFB portions.

Abstract: Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other.

Abstract: A semiconductor laser (a first semiconductor optical device) and an optical modulator (a second semiconductor optical device) are integrated on the same n-type InP substrate. The semiconductor laser butt-joined to the optical modulator. Each of the semiconductor laser and the optical modulator has a Be-doped p-type InGaAs contact layer. The p-type InGaAs contact layers have a Be-doping concentration of 7×1018 cm?3 or more, and a thickness of 300 nm or less.

Abstract: On a first region that is a part of one main face of a semiconductor substrate 1, a first semiconductor laser structure 10 is formed so as to have a first lower cladding layer 3, a first active layer 4 with a first quantum well structure and first upper cladding layers 5, 7, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structure 20 is formed so as to have a second lower cladding layer 13, a second active layer 14 with a second quantum well structure and a second upper cladding layer 15, 17, which are layered in this order, thereby forming a second resonator. End face coating films 31, 32 are formed on facets of the first and the second resonators, and a nitrogen-containing layer 30 is formed between the facets of the first and the second resonators and the facet coating film.

Abstract: The laser device (22) is formed by a stack of laser diodes (4) arranged on plates (6) formed of a material that is electrically conductive and a good heat conductor. In order to obtain a high level of heat evacuation efficiency towards the cooling body (10) and to prevent electric short-circuiting problems, each plate has at the bottom end (24) thereof, an electrically insulating layer deposited on the surface thereof prior to being fixed to the cooling body by a securing material (26) that is preferably a good heat conductor, formed in particular by a braze layer. According to the invention, the insulating layer covers the end face of each plate and also goes up along the lateral faces of the latter over a certain height. The securing material is arranged under the end of the plate and also partially covers the insulating layer along the lateral faces of the plate.

Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

Abstract: A broadly tunable single-mode infrared laser source based on semiconductor lasers. The laser source has two parts: an array of closely-spaced DFB QCLs (or other semiconductor lasers) and a controller that can switch each of the individual lasers in the array on and off, set current for each of the lasers and, and control the temperature of the lasers in the array. The device can be used in portable broadband sensors to simultaneously detect a large number of compounds including chemical and biological agents. A microelectronic controller is combined with an array of individually-addressed DFB QCLs with slightly different DFB grating periods fabricated on the same broadband (or multiple wavelengths) QCL material. This allows building a compact source providing narrow-line broadly-tunable coherent radiation in the Infrared or Terahertz spectral range (as well as in the Ultraviolet and Visible spectral ranges, using semiconductor lasers with different active region design).

Abstract: A photonic integrated circuit (PIC) having multiple Mach-Zehnder (MZ) modulators with different lengths is provided. The modulator lengths are selected to provide optimal performance for each optical path provided on the PIC.

Abstract: A two-wavelength semiconductor laser device includes a first semiconductor laser device including a first-conductivity type first cladding layer, a first guide layer made of AlGaAs mixed crystal, a first quantum well active layer having a barrier layer made of AlGaAs mixed crystal, a second guide layer made of AlGaAs mixed crystal, and a second-conductivity type second cladding layer, and a second semiconductor laser device including a first-conductivity type third cladding layer, a third guide layer made of AlGaInP mixed crystal, a second quantum well active layer having a barrier layer made of AlGaInP mixed crystal, a fourth guide layer made of AlGaInP mixed crystal, and a second-conductivity type fourth cladding layer. At least the barrier layer included in the first quantum well active layer, the first guide layer, and the second guide layer each have an Al molar ratio of more than 0.47 and 0.60 or less.

Abstract: A multibeam laser apparatus and an image forming device using the same. The multibeam laser beam apparatus includes a common electrode unit, a plurality of light source units to emit light using the common electrode unit, and an isolating unit to interconnect the common electrode unit and the plurality of light source units. With such configuration for example, the laser apparatus can reduce distances between the respective light source units and the number of the electrodes, and thus reduce the number of wires and legs to produce a compact chip.

Abstract: A light source device includes a plurality of first laser emission units and a plurality of second laser emission units for emitting light. The plurality of first laser emission units and the plurality of second laser emission units are disposed on a flat surface. The first laser emission units and the second laser emission units are composed so that a drive for light emission is sequentially switched. Each of the second laser emission units is disposed between the adjoining first laser emission units.

Abstract: VCSEL array with a structure in which vertical cavity surface emitting devices are arranged on a substrate. The VCSEL array includes first and second optical devices. The second optical device receives light that is directed parallel to the substrate and emitted from the first optical device and converts the light into an electric signal when a voltage applied to the second optical device is switched to a reverse bias. The second optical device emits light that is directed parallel to the substrate when a voltage applied to the second optical device is switched to a forward bias.

Abstract: Provided is a two-dimensional surface-emitting laser array that enables to dispose more elements in a smaller area and enables compact size, high resolution, and high speed thereof. The two-dimensional surface-emitting laser array includes surface-emitting laser elements arranged in a two-dimensional manner of m rows and n columns (m is an integer of two or larger, and n is an integer of three or larger). The interval between mesas for arranging electrical wirings for individually driving the surface-emitting laser elements is assigned so that the interval in the m row direction increases according to the number of the electrical wirings passing through between the mesas.

Abstract: A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.

Abstract: A colored light source apparatus is provided. The apparatus includes light sources corresponding to active regions defined by defects in a photonic crystal structure, wherein the photonic crystal structure is based on periodic structures. The apparatus also includes a waveguide, a first electrode, and a second electrode. Varying electrical properties between the first and second electrodes stimulates radiation production in the active regions, wherein the radiation is at least partially coupled to and guided by the waveguide.

Abstract: A device including a semiconductor laser device having a semiconductor laser chip, and a molded resin having a light diffusion capability. The semiconductor laser chip is covered with the molded resin.

Abstract: A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a submount 63 having, mounted on a front part thereof, the two-beam semiconductor laser element LDC with the light-emitting face thereof directed forward and having a first and a second electrode pads 64 and 65 connected to electrodes 61 and 62 of the first and second semiconductor laser element LD1 and LD2 by being kept in contact therewith. The first and second electrode pads 64 and 65 are formed to extend farther behind the two-beam semiconductor laser element LDC, and wires 14 and 16 are wire-bonded behind the two-beam semiconductor laser element LDC.