Monolithic Integrated Patents (Class 372/50.1)
  • Patent number: 10998696
    Abstract: A vertical cavity surface emitting laser includes a first laminate including first semiconductor layers having a first Al composition, and second semiconductor layers having a second Al composition greater than the first Al composition; a current confinement structure including a current aperture and a current blocker; a first compound semiconductor layer adjacent to the current confinement structure; and a second compound semiconductor layer adjacent to the first laminate and the first compound semiconductor layer. The first compound semiconductor layer has a first aluminum profile changing monotonously in a direction from the first laminate to the current confinement structure from a first minimum Al composition within a range greater than the first Al composition and smaller than the second Al composition to a first maximum Al composition. The second compound semiconductor layer has an Al composition greater than the first Al composition and smaller than the first maximum Al composition.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: May 4, 2021
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Natsumi Kaneko, Yutaka Onishi, Takeshi Aoki
  • Patent number: 10989983
    Abstract: An amplification waveguide device and an amplification beam steering apparatus are provided. The amplification beam steering apparatus includes a beam steerer configured to control emission directions of light beams output therefrom, a plurality of waveguides configured to guide the light beams output from the beam steerer, and a light amplifier configured to amplify the light beams traveling through the plurality of waveguides.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: April 27, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eunkyung Lee, Byounglyong Choi, Jungwoo Kim
  • Patent number: 10928659
    Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.
    Type: Grant
    Filed: February 13, 2019
    Date of Patent: February 23, 2021
    Assignee: Rockley Photonics Limited
    Inventors: Andrew Rickman, Aaron Zilkie, Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Jones
  • Patent number: 10923879
    Abstract: It is provided a method for fabricating an electroabsorption modulated laser comprising generating a single mode laser section and an electroabsorption modulator section, comprising fabricating at least one n-doped layer of the laser section and at least one n-doped layer of the modulator section; generating an isolating section for electrically isolating at least the n-doped layer of the laser section and the n-doped layer of the modulator section from one another. Generating the isolating section comprises epitaxially growing at least one isolating layer and structuring the isolating layer before the generation of the n-doped layer of the laser section and the n-doped layer of the modulator section.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: February 16, 2021
    Assignee: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
    Inventors: Martin Moehrle, Victor Dolores Calzadilla, Marlene Zander, Francisco Soares
  • Patent number: 10916907
    Abstract: A uni-block optical pulse compressor which acts to manipulate an input beam with a train of pulses in such a way that the pulses returned after a round-trip though the uni-block compressor are temporally compressed as described. The device is comprised of two optically transparent dielectric blocks whose indices of refraction are larger than the ambient, and provides a compact, portable and robust means for temporally compressing long duration pulses.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: February 9, 2021
    Assignee: CARNEGIE MELLON UNIVERSITY
    Inventors: Chang Yang, Elias Towe
  • Patent number: 10886704
    Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).
    Type: Grant
    Filed: December 11, 2019
    Date of Patent: January 5, 2021
    Assignee: OSRAM OLED GMBH
    Inventors: Frank Singer, Norwin Von Malm, Tilman Ruegheimer, Thomas Kippes
  • Patent number: 10886701
    Abstract: A semiconductor vertical light source includes upper and lower mirrors with an active region in between, an inner mode confinement region, and an outer current blocking region that includes a common epitaxial layer including an epitaxially regrown interface between the active region and upper mirror. A conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer. The first and second impurity doped region force current flow into the conducting channel during normal operation of the light source.
    Type: Grant
    Filed: August 26, 2019
    Date of Patent: January 5, 2021
    Assignee: sdPhotonics LLC
    Inventor: Dennis G. Deppe
  • Patent number: 10840673
    Abstract: An electrically pumped surface-emitting photonic crystal laser has a second surface of a first metal electrode arranged on a photonic crystal structure, a first electrical currents confining structure and a filled layer, and a substrate having a top surface arranged on a first surface of the first metal electrode for the photonic crystal structure to be inversely disposed. The photonic crystal laser has its epitaxy structure etched from above to fabricate the photonic crystal to allow laser beams to be reflected by the first metal electrode due to the inverse disposition and to be emitted from a rear surface of the epitaxy structure.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: November 17, 2020
    Assignee: Conary Enterprise Co., Ltd.
    Inventors: Kuo-Jui Lin, Yu-Chen Chen
  • Patent number: 10825952
    Abstract: An optoelectronic device includes a semiconductor substrate and a monolithic array of light-emitting elements formed on the substrate. The light-emitting elements include a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array, and a second plurality of second emitters, configured to emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: November 3, 2020
    Assignee: APPLE INC.
    Inventors: Arnaud Laflaquiere, Marc Drader
  • Patent number: 10816830
    Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.
    Type: Grant
    Filed: February 13, 2019
    Date of Patent: October 27, 2020
    Assignee: ROCKLEY PHOTONICS LIMITED
    Inventors: Andrew Rickman, Aaron Zilkie, Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Jones
  • Patent number: 10739518
    Abstract: Wavelength division multiplexing devices, and methods of forming the same, include a coupling lens and a waveguide, the lens being positioned over a mirror formed in a transmission path of the waveguide. The mirror reflects incoming light signals out of the transmission path through the lens and further reflects light signals coming from the lens and into the transmission path. An optical chip is positioned near a focal length of the lens. The optical chip has an optical filter configured to transmit a light signal at a first wavelength and to reflect received light signals at wavelengths other than the first wavelength.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: August 11, 2020
    Assignee: International Business Machines Corporation
    Inventor: Jean Benoit Héroux
  • Patent number: 10727368
    Abstract: Optoelectronic device modules having a silicon photonics transmitter die connected to a silicon interposer are described. In an example, the optoelectronic device module includes a silicon photonics transmitter die connected to a silicon interposer, and the silicon interposer is disposed between the silicon photonics transmitter die and a substrate. The silicon interposer provides an electrical interconnect between the silicon photonics transmitter die and the substrate, and reduces a likelihood that a hybrid silicon laser on the silicon photonics transmitter die will be damaged during module operation.
    Type: Grant
    Filed: April 1, 2016
    Date of Patent: July 28, 2020
    Assignee: Intel Corporation
    Inventors: Myung Jin Yim, Seungjae Lee, Sandeep Razdan
  • Patent number: 10622513
    Abstract: A semiconductor light emitting device includes a first light emitting portion including a first semiconductor stack, as well as a first lower dispersion Bragg reflector (DBR) layer and a first upper dispersion Bragg reflector (DBR) layer, disposed above and below the first semiconductor stack, a second light emitting portion including a second semiconductor stack, as well as a second lower dispersion Bragg reflector (DBR) layer and a second upper dispersion Bragg reflector (DBR) layer, disposed above and below the second semiconductor stack, a third light emitting portion including a third semiconductor stack, as well as a third lower dispersion Bragg reflector (DBR) layer and a third upper dispersion Bragg reflector (DBR) layer, disposed above and below the third semiconductor stack, a first bonding layer disposed between the first light emitting portion and the second light emitting portion, and a second bonding layer disposed between the second light emitting portion and the third light emitting portion.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: April 14, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong Gun Lee, Yong Il Kim, Jin Sub Lee
  • Patent number: 10613409
    Abstract: An amplification waveguide device and an amplification beam steering apparatus are provided. The amplification beam steering apparatus includes a beam steerer configured to control emission directions of light beams output therefrom, a plurality of waveguides configured to guide the light beams output from the beam steerer, and a light amplifier configured to amplify the light beams traveling through the plurality of waveguides.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: April 7, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eunkyung Lee, Byounglyong Choi, Jungwoo Kim
  • Patent number: 10553571
    Abstract: Backplane-side bonding structures including a common metal are formed on a backplane. Multiple source coupons are provided such that each source coupon includes a transfer substrate and an array of devices to be transferred. Each array of devices are arranged such that each array includes a unit cell structure including multiple devices of the same type and different types of bonding structures including different metals that provide different eutectic temperatures with the common metal. Different types of devices can be sequentially transferred to the backplane by sequentially applying the supply coupons and selecting devices providing progressively higher eutectic temperatures between respective bonding pads and the backplane-side bonding structures. Previously transferred devices stay on the backplane during subsequent transfer processes, enabling formation of arrays of different devices on the backplane.
    Type: Grant
    Filed: January 4, 2018
    Date of Patent: February 4, 2020
    Assignee: GLO AB
    Inventors: Anusha Pokhriyal, Sharon N. Farrens
  • Patent number: 10554010
    Abstract: A method of producing a semiconductor laser device includes the steps of preparing first and second substrate products each of which includes a substrate and a stacked semiconductor layer formed on the substrate, the first and second substrate products being different from each other; etching the first substrate product with a chlorine-based gas in a vacuum chamber by using a dry etching method; evacuating the vacuum chamber while monitoring the pressure of hydrogen chloride in the vacuum chamber so as to obtain a partial pressure of the hydrogen chloride within a predetermined range; after evacuating the vacuum chamber, introducing the second substrate product into the vacuum chamber while maintaining a vacuum state inside the vacuum chamber; and etching the second substrate product with a chlorine-based gas in the vacuum chamber by using the dry etching method.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: February 4, 2020
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yukihiro Tsuji
  • Patent number: 10554019
    Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: February 4, 2020
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Frank Singer, Norwin Von Malm, Tilman Ruegheimer, Thomas Kippes
  • Patent number: 10555079
    Abstract: A system includes a laser microphone or laser-based microphone or optical microphone. The laser microphone includes a laser transmitter to transmit an outgoing laser beam towards a human speaker. The laser transmitter acts also as a self-mix interferometry unit that receives the optical feedback signal reflected from the human speaker, and generates an optical self-mix signal by self-mixing interferometry of the laser beam and the received optical feedback signal. Instead of utilizing a single laser beam, multiple laser beams are used, by operating an array of laser transmitters, or by utilizing a laser beam splitter or a crystal to split laser beams or to diffract or scatter laser beams. Optionally, one or more laser beams may temporally scan a target area.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: February 4, 2020
    Assignee: VOCALZOOM SYSTEMS LTD.
    Inventor: Tal Bakish
  • Patent number: 10530127
    Abstract: A semiconductor vertical light source includes upper and lower mirrors with an active region in between, an inner mode confinement region, and an outer current blocking region that includes a common epitaxial layer including an epitaxially regrown interface between the active region and upper mirror. A conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer. The first and second impurity doped region force current flow into the conducting channel during normal operation of the light source.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: January 7, 2020
    Assignee: University of Central Florida Research Foundation, Inc.
    Inventor: Dennis G. Deppe
  • Patent number: 10514497
    Abstract: A photonics packaging method is provided. The photonics packaging method includes providing a substrate (10) and attaching a first optical device (12) to the substrate (10). The first optical device (12) includes a first mode converter (14) optically coupled to a first integrated photonics chip (16). A second optical device (32) is also attached to the substrate (10). The second optical device (32) includes a second mode converter (34) optically coupled to a second integrated photonics chip (36). The second optical device (32) is of a greater height than the first optical device (12). An index-matching material (56) is disposed in a space between the first and second optical devices (12) and (32) and a force is applied on the second optical device (32) to cause the second optical mode converter (34) to align with the first optical mode converter (14). The index-matching material (56) is subsequently cured.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: December 24, 2019
    Assignee: Rain Tree Photonics PTE. LTD.
    Inventors: Ying Huang, Tsung-Yang Liow
  • Patent number: 10509319
    Abstract: The present invention relates to a photosensitive composition comprising at least one nanosized fluorescent material and polysiloxane, to a color conversion film, and to a use of the color conversion film in an optical device. The invention further relates to an optical device comprising the color conversion film and a method for preparing the color conversion film and the optical device.
    Type: Grant
    Filed: February 5, 2016
    Date of Patent: December 17, 2019
    Assignees: Merck Patent GmbH, AZ Electronic Materials (Luxembourg) S.a.r.l.
    Inventors: Masayoshi Suzuki, Tadashi Kishimoto, Yuki Hirayama, Stephan Dertinger, Toshiaki Nonaka, Daishi Yokoyama
  • Patent number: 10481328
    Abstract: An optical phased array comprises a substrate layer having a substantially planar surface, a plurality of emitters on the surface of the substrate, and at least one cladding layer over the emitters. A plurality of optics components coupled to the cladding layer is located a predetermined distance away from the emitters, with the optics components in optical communication with the emitters. The optics components comprise a first set of optics configured for angular correction of light beams emitted from the emitters, and a second set of optics separated from the first set of optics, the second set of optics configured for divergence enhancement of the light beams transmitted from the first set of optics. Alternatively, the optics components comprise a combined set of optics configured for angular correction of light beams emitted from the emitters, and for divergence enhancement of the light beams transmitted from the combined set of optics.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: November 19, 2019
    Assignee: Honeywell International Inc.
    Inventors: Neil A. Krueger, Matthew Wade Puckett
  • Patent number: 10475669
    Abstract: A method for fabricating a Mach-Zehnder modulator includes: forming a resin body embedding a semiconductor mesa for an arm waveguide, the resin body having an opening on an upper face of the semiconductor mesa; forming an electrode on the semiconductor mesa and the resin body, the electrode being in contact with the upper face of the semiconductor mesa through the opening of the resin body; forming an inorganic insulating protective layer on the electrode and the resin body, the inorganic insulating protective layer having an arrangement of multiple first openings therethrough to the electrode; and forming a metal body on the inorganic insulating protective layer and the electrode, the metal body being in contact with the electrode through the multiple first openings of the inorganic insulating protective layer.
    Type: Grant
    Filed: January 25, 2018
    Date of Patent: November 12, 2019
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Takamitsu Kitamura
  • Patent number: 10461505
    Abstract: Laser diodes formed on a common substrate with layers of suitable thickness and refractive indices produce output beams that are coherently coupled. A phase mask can be situated to produce phase differences in one or more of the output beams to produce a common wavefront phase. The phase-corrected beams propagate with reduced angular divergence than conventional lasers that are not coherently coupled, and the coherently coupled laser diodes can provide higher beam brightness, enhanced beam parameter product, and superior power coupled into doped fibers in fiber lasers.
    Type: Grant
    Filed: April 4, 2017
    Date of Patent: October 29, 2019
    Assignee: nLIGHT, Inc.
    Inventors: Zhigang Chen, Manoj Kanskar
  • Patent number: 10374121
    Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment, a component includes a semiconductor layer sequence including a first main side, a first layer, an active layer, a second layer and a second main side, a first contact element arranged on the second main side filling a recess in the semiconductor layer sequence, wherein the recess extends from the second main side through the second layer and the active layer and opens out into the first layer and a second contact element arranged on the second main side, the second contact element being arranged laterally next to the recess in a plan view of the second main side, wherein the first contact element comprises a first transparent intermediate layer, a metallic first mirror layer and a metallic injection element.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: August 6, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Dominik Scholz, Alexander F. Pfeuffer
  • Patent number: 10359567
    Abstract: A qualification apparatus for a photonic chip on a wafer that leaves undisturbed an edge coupler that provides an operating port for the photonic devices or circuits on the chip during normal operation in order to not introduce extra loss in the optical path of the final circuit. The qualification apparatus provides an optical path that is angled with regard to the surface of the chip, for example by using a grating coupler. The qualification apparatus can be removed after the chip is qualified. Optionally, the qualification apparatus can be left in communication with the chip and optionally employed as an input port for the chip after the chip has been separated from other chips on a common substrate.
    Type: Grant
    Filed: September 21, 2015
    Date of Patent: July 23, 2019
    Assignee: Elenion Technologies, LLC
    Inventors: Ari Novack, Matthew Akio Streshinsky, Michael J. Hochberg
  • Patent number: 10331007
    Abstract: A functional optical device is disclosed. The functional optical device integrates a coupling unit, a waveguide photodiode (PD) and an optical waveguide on a semiconductor substrate. The coupling unit extracts an optical signal by performing interference of signal light with local light. The optical waveguide carries the optical signal from the coupling unit to the waveguide PD. The semiconductor substrate provides a heavily doped conducting layer and a buffer layer that is un-doped or lightly doped with n-type impurities by density smaller than density of impurities in the heavily doped conducting layer. The conducting layer and the buffer layer continuously and evenly extend from the optical waveguide to the waveguide PD.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: June 25, 2019
    Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventors: Yoshihiro Yoneda, Takuya Okimoto
  • Patent number: 10297699
    Abstract: Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAs-GaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a “W”-structured quantum well situated between two barrier layers, the “W”-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.
    Type: Grant
    Filed: March 19, 2018
    Date of Patent: May 21, 2019
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Jerry R. Meyer, Igor Vurgaftman, Chadwick Lawrence Canedy, William W. Bewley, Chul Soo Kim, Charles D. Merritt, Michael V. Warren, Mijin Kim
  • Patent number: 10236661
    Abstract: A wavelength variable light source includes a housing, a heat sink disposed in the housing, an excitation light source disposed on the heat sink and configured to output excitation light, a gain medium disposed on the heat sink and including an active layer and a lower DBR, a MEMS mechanism including a movable film facing the gain medium via a gap, disposed on the gain medium, and configured to control the gap, an upper DBR provided in the movable film and configuring a resonator together with the lower DBR, a reflector configured to reflect the excitation light output from the excitation light source toward the gain medium in the housing, and a window formed in the housing and configured to transmit light output from the gain medium.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: March 19, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Atsushi Sugiyama, Tadataka Edamura, Naota Akikusa
  • Patent number: 10205300
    Abstract: Laser dazzler devices and methods of using laser dazzler devices are disclosed. More specifically, embodiments of the present invention provide laser dazzling devices power by one or more green laser diodes characterized by a wavelength of about 500 nm to 540 nm. In various embodiments, laser dazzling devices according to the present invention include non-polar and/or semi-polar green laser diodes. In a specific embodiment, a laser dazzling device includes a plurality of green laser diodes.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: February 12, 2019
    Inventors: James W. Raring, Paul Rudy, Vinod Khosla, Pierre Lamond, Steven P. Denbaars, Shuji Nakamura, Richard T. Ogawa
  • Patent number: 10177290
    Abstract: This disclosure discloses a light-emitting device includes a semiconductor stack, an electrode, an electrode post, a reflective insulating layer, an extending electrode, and a supporting structure. The electrode is disposed on a lower surface of the semiconductor stack, and electrically connected to the semiconductor stack. The electrode post is disposed on the electrode. The reflective insulating layer surrounds the electrode post, and has a bottom surface which is coplanar with the electrode post. The extending electrode is disposed on an upper surface of the semiconductor stack. The supporting structure is located on the extending electrode.
    Type: Grant
    Filed: April 7, 2017
    Date of Patent: January 8, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Min-Hsun Hsieh, Jen-Chieh Yu, Wei-Fan Ke
  • Patent number: 10139562
    Abstract: In an embodiment, an integrated optical chip comprises: a substrate; a plurality of planar lightwave circuit-based optical components that are formed on one surface of the substrate; and a plurality of optical waveguides that are formed on the one surface of the substrate and that connect the plurality of optical components to one another. In the embodiment, the plurality of optical components includes a saturable absorber having nonlinear loss characteristics. The saturable absorber may comprise: a core layer that is formed on the one surface of the substrate; an overcladding layer that wraps around at least a part of the core layer; and a saturable absorption layer that is formed on at least a part of the overcladding layer and that is arranged so as to interact with an evanescent field of light guided through at least a part of the core layer.
    Type: Grant
    Filed: October 6, 2015
    Date of Patent: November 27, 2018
    Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jung Won Kim, Chur Kim
  • Patent number: 10090642
    Abstract: A hybrid external cavity laser and a method for configuring the laser having a stabilized wavelength is disclosed. The laser comprises a semiconductor gain section and a volume Bragg grating, wherein a laser emission from the semiconductor gain section is based on a combination of a reflectivity of a front facet of the semiconductor gain section and a reflectivity of the volume Bragg grating and the reflectivity of the semiconductor gain section and the volume Bragg grating are insufficient by themselves to support the laser emission. The hybrid cavity laser further comprises an etalon that provides further wavelength stability.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: October 2, 2018
    Assignee: Innovative Photonic Solutions, Inc.
    Inventors: John C. Connolly, Donald E Ackley, Scott L. Rudder, Harald R. Guenther
  • Patent number: 10033156
    Abstract: A semiconductor vertical light source includes an upper mirror and a lower mirror. An active region is between the upper and lower mirror. The light source includes an inner mode confinement region and outer current blocking region. The outer current blocking region includes a common epitaxial layer that includes an epitaxially regrown interface which is between the active region and upper mirror, and a conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors is between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: July 24, 2018
    Assignees: University of Central Florida Research Foundation, Inc., sdPhotonics, LLC
    Inventor: Dennis G. Deppe
  • Patent number: 10020884
    Abstract: Methods and systems for a bi-directional receiver for standard single-mode fiber based on grating couplers may include, in an integrated circuit comprising an optoelectronic transceiver, a multi-wavelength grating coupler, and first and second optical sources coupled to the integrated circuit: coupling first and second source optical signals at first and second wavelengths into the photonically-enabled integrated circuit using the first and second optical sources, where the second wavelength is different from the first wavelength, receiving a first optical data signal at the first wavelength from an optical fiber coupled to the multi-wavelength grating coupler, and receiving a second optical data signal at the second wavelength from the optical fiber. Third and fourth optical data signals at the first and second wavelengths may be communicated out of the optoelectronic transceiver via the multi-wavelength grating coupler.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: July 10, 2018
    Assignee: Luxtera, Inc.
    Inventors: Peter DeDobbelaere, Christopher Bergey, Attila Mekis
  • Patent number: 10014653
    Abstract: Frequency standards based on mode-locked fiber lasers, fiber amplifiers and fiber-based ultra-broad bandwidth light sources, and applications of the same.
    Type: Grant
    Filed: October 14, 2015
    Date of Patent: July 3, 2018
    Assignee: IMRA AMERICA, INC.
    Inventors: Ingmar Hartl, Martin Fermann
  • Patent number: 10007057
    Abstract: An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: June 26, 2018
    Assignee: International Business Machines Corporation
    Inventors: Russell A. Budd, Effendi Leobandung, Ning Li, Jean-Olivier Plouchart, Devendra K. Sadana
  • Patent number: 9995880
    Abstract: An optical communications module is provided that has WDM capabilities for increased bandwidth and that is suitable for use with single mode optical fiber or multimode optical fiber. The module can be configured to have both WDM and BiDi functionality to further increase bandwidth and can have a single- or multi-channel configuration. The module has an integrally-formed body having an optical port and portions of an optical coupling system that are integrally formed in the body. The optical port is adapted to mate with an end of an optical fiber cable that holds one or more ends of one or more optical fibers, depending on whether the module is a single-channel or multi-channel module. The optical coupling system couples light between an end or ends of one or more optical fibers and one or more optoelectronic devices in a way that reduces back reflection and mode partition noise.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: June 12, 2018
    Assignee: Foxconn Interconnect Technology Limited
    Inventors: Li Ding, Ye Chen, Bing Shao, Andrew Schmit, Seng-kum Chan
  • Patent number: 9991420
    Abstract: A semiconductor light-emitting element according to the present invention is a semiconductor light-emitting element including: a first semiconductor layer of a first conductivity type; a light-emitting functional layer formed on the first semiconductor layer; and a second semiconductor layer that is formed on the light-emitting functional layer and is of a second conductivity type opposite to that of the first semiconductor layer. The light-emitting functional layer has: a base layer formed on the first semiconductor layer, the base layer having a plurality of base segments that have a composition subject to stress strain from the first semiconductor layer and are formed in a random net shape, the base layer being doped with a dopant of the second conductivity type; and a quantum well light-emitting layer formed on the base layer.
    Type: Grant
    Filed: March 22, 2016
    Date of Patent: June 5, 2018
    Assignees: STANLEY ELECTRIC CO., LTD., THE UNIVERSITY OF TOKYO
    Inventors: Takako Fujiwara, Masakazu Sugiyama
  • Patent number: 9978909
    Abstract: A method for fabricating a semiconductor device includes generating a wafer by generating an N-type semiconductor layer and an active region on the N-type semiconductor layer. The N-type semiconductor layer is located on a first side of the active layer. One or more oxidizing layers are generated along with a P-type semiconductor layer generated on a second, opposite side of the active layer. The wafer is etched to expose a surface of each oxidizing layer. Oxidation of a first region of each oxidizing layer is allowed, where a second region of each oxidizing layer remains non-oxidized.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: May 22, 2018
    Assignee: X Development LLC
    Inventors: Michael Grundmann, Martin F. Schubert
  • Patent number: 9964704
    Abstract: A spot-size converter includes a substrate, a first core provided over the substrate, and second and third cores provided over the substrate and over or under the first core with a cladding layer sandwiched therebetween and extending in parallel to the substrate and the first core.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: May 8, 2018
    Assignees: FUJITSU LIMITED, NEC CORPORATION
    Inventors: Nobuaki Hatori, Masashige Ishizaka, Takanori Shimizu
  • Patent number: 9915794
    Abstract: An optical device includes a semiconductor laser light source, a grating element and an optical transmission element. The grating element includes a ridge-type optical waveguide having an incident surface to which a semiconductor laser light is incident and an emitting surface from which an outgoing light having a desired wavelength is emitted, and a Bragg grating formed in the ridge-type optical waveguide. The light transmission element includes an optical transmission part having an incident surface to which the outgoing light from the ridge-type optical waveguide is incident. A near-field diameter in a horizontal direction at the incident surface of the optical transmission part is greater than a near-field diameter in the horizontal direction at the emitting surface of said ridge-type optical waveguide.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: March 13, 2018
    Assignee: NGK Insulators, Ltd.
    Inventors: Jungo Kondo, Shoichiro Yamaguchi, Yukihisa Takeuchi
  • Patent number: 9903759
    Abstract: A method for manufacturing an etalon is disclosed. The method comprises arranging a plurality of first spacers between a flat surface of a first optical plate and a concave surface of a second optical plate. For each of the spacers, the flat surface bears on a first abutment surface of the spacer and the concave surface bears on a second abutment surface of the spacer. The concave surface is deformed to be parallel to the second abutment surfaces. For each of the spacers, the flat surface is bonded to the first abutment surface and the concave surface is bonded to the second abutment surface.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: February 27, 2018
    Inventor: Dar-Tson Shen
  • Patent number: 9885936
    Abstract: A Mach-Zehnder modulator includes: a support having a principal surface, the principal surface having a first area, a second area, and a third area; a first structure including first and second semiconductor mesas disposed on the first and second areas, respectively; a second structure including a first strip-shaped semiconductor region on the second area, a second strip-shaped semiconductor region on the third area, and a first strip-shaped void and a second strip-shaped void defining the first and second strip-shaped semiconductor regions; a first electrode disposed on the first semiconductor mesa in the first area, the first strip-shaped semiconductor region of the second structure being disposed between the support and the second semiconductor mesa of the first structure in the second area, and the first and second semiconductor mesas, and the first and second strip-shaped semiconductor regions being arranged to constitute a first arm waveguide of the Mach-Zehnder modulator.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: February 6, 2018
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Masataka Watanabe, Naoya Kono
  • Patent number: 9841560
    Abstract: Methods and systems for partial integration of wavelength division multiplexing and bi-directional solutions are disclosed and may include, an optical transceiver on a silicon photonics integrated circuit coupled to a planar lightwave circuit (PLC). The silicon photonics integrated circuit may include a first modulator and first light source that operates at a first wavelength and a second modulator and second light source that operates at a second wavelength. The transceiver and PLC are operable to modulate a first continuous wave (CW) optical signal from the first light source utilizing the first modulator driven by a first electrical signal and modulate a second CW optical signal from the second light source utilizing the second modulator driven by a second electrical signal. The modulated signals may be communicated from the modulators to the PLC utilizing a first pair of grating couplers in the IC and combined in the PLC.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: December 12, 2017
    Assignee: Luxtera, Inc.
    Inventors: Brian Welch, Attila Mekis, Steffan Gloeckner
  • Patent number: 9812609
    Abstract: Embodiments regard a semiconductor device including an oxide current aperture. An embodiment of a semiconductor device includes an N-type semiconductor layer; an active region on the N-type semiconductor layer, the N-type semiconductor layer located on a first side of the active layer; a P-type semiconductor layer located on a second, opposite side of the active layer; and one or more oxide current apertures including a first oxide current apertures in close proximity to the active region, wherein each oxide current aperture includes a non-oxidized region surrounded by an oxidized region.
    Type: Grant
    Filed: April 11, 2016
    Date of Patent: November 7, 2017
    Assignee: X Development LLC
    Inventors: Michael Grundmann, Martin F. Schubert
  • Patent number: 9762029
    Abstract: A semiconductor laser according to the present invention includes an active layer, a guide layer laminated on the active layer, a diffraction grating formed along a light emission direction in the guide layer, an upper electrode provided above the guide layer, and a lower electrode provided below the active layer. The diffraction grating includes a current-injection diffraction grating and current-non-injection diffraction gratings provided both in front of and in back of the current-injection diffraction grating. Phase shifters are individually provided at a central portion of the current-injection diffraction grating and at boundaries between the current-injection diffraction grating and the current-non-injection diffraction gratings. The upper electrode is provided above the current-injection diffraction grating and is not provided above the current-non-injection diffraction gratings.
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: September 12, 2017
    Assignee: Mitsubishi Electric Corporation
    Inventors: Mitsunobu Gotoda, Masakazu Takabayashi
  • Patent number: 9753228
    Abstract: An optical transmission and reception connector system includes a cable that has a plug section formed at both ends thereof so as to relay and transmit light and an interfacing module that is mounted on an electronic apparatus and that includes an insertion space into which the plug section is detachably inserted. The cable is provided with a first relay optical path and a second relay optical path.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: September 5, 2017
    Assignee: KOREA PHOTONICS TECHNOLOGY INSTITUTE
    Inventors: Sung-Hwan Hwang, Woo-Jin Lee, Myoung-Jin Kim, Eun-Joo Jung, Byung-Sup Rho
  • Patent number: 9748730
    Abstract: High-power, phased-locked, laser arrays as disclosed herein utilize a system of optical elements that may be external to the laser oscillator array. Such an external optical system may achieve mutually coherent operation of all the emitters in a laser array, and coherent combination of the output of all the lasers in the array into a single beam. Such an “external gain harness” system may include: an optical lens/mirror system that mixes the output of all the emitters in the array; a holographic optical element that combines the output of all the lasers in the array, and an output coupler that selects a single path for the combined output and also selects a common operating frequency for all the coupled gain regions.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: August 29, 2017
    Assignee: NECSEL INTELLECTUAL PROPERTY, INC.
    Inventor: Boris Leonidovich Volodin
  • Patent number: 9735869
    Abstract: Methods and systems for a bi-directional receiver for standard single-mode fiber based on grating couplers may include, in a photonically-enabled integrated circuit comprising an optoelectronic transceiver, a multi-wavelength grating coupler, and first and second optical source assemblies coupled to the photonically-enabled integrated circuit: coupling first and second source optical signals at first and second wavelengths into the photonically-enabled integrated circuit using the first and second optical source assemblies, where the second wavelength is different from the first wavelength, receiving a first optical data signal at the first wavelength from an optical fiber coupled to the multi-wavelength grating coupler, and receiving a second optical data signal at the second wavelength from the optical fiber. Third and fourth optical data signals at the first and second wavelengths may be communicated out of the optoelectronic transceiver via the multi-wavelength grating coupler.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: August 15, 2017
    Assignee: Luxtera, Inc.
    Inventors: Peter DeDobbelaere, Christopher Bergey, Attila Mekis