Monolithic Integrated Patents (Class 372/50.1)
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Patent number: 12166331Abstract: An optical device may include a substrate including a conductive core, a first layer stack on a first surface of the conductive core, a conductor-filled trench extending through the first layer stack to the conductive core such that the conductor-filled trench is on the first surface of the conductive core, and a second layer stack on a second surface of the conductive core. The optical device may include a vertical-cavity surface-emitting laser (VCSEL) chip above the conductor-filled trench. The VCSEL chip may include an array of VCSELs. A size of the conductor-filled trench may match a size of the VCSEL chip, match a size of an emission region of the array of VCSELs, or be greater than the size of the emission region of the array of VCSELs and less than the size of the VCSEL chip.Type: GrantFiled: March 30, 2021Date of Patent: December 10, 2024Assignee: Lumentum Operations LLCInventors: Wei Shi, Siu Kwan Cheung, Lijun Zhu, Raman Srinivasan, Huanlin Zhu
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Patent number: 12158624Abstract: An optical coupler includes: a plurality of waveguide core layers that are (i) stacked vertically one over another, (ii) spaced apart vertically one from another and (iii) extending from a light receiving end of the optical coupler longitudinally through the optical coupler to a light output end of the optical coupler, wherein each of the plurality of waveguide core layers includes a plurality of distinct waveguide paths extending from the light receiving end of the optical coupler along a length of the optical coupler; and a cladding formed from a cladding material cladding material surrounding each of the plurality of waveguide core layers. Light propagating within outer ones of the plurality of waveguide core layers is directed toward an interior one of the plurality of waveguide core layers via evanescent coupling between adjacent ones of the plurality of waveguide core layers.Type: GrantFiled: June 6, 2022Date of Patent: December 3, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tai-Chun Huang, Stefan Rusu
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Patent number: 12119417Abstract: An optical semiconductor element includes: a semiconductor substrate that is semi-insulating; a columnar body that is formed on a front surface-side of the semiconductor substrate and configured to emit or receive light from the front surface-side; a front surface-side electrode that is connected to the columnar body; a back surface-side electrode formed on a back surface-side of the semiconductor substrate; and an electrically conductive member that is formed to penetrate through the semiconductor substrate to connect the front surface-electrode and the back surface-side electrode, and has a protruding portion protruding on the front surface-side of the semiconductor substrate.Type: GrantFiled: June 1, 2021Date of Patent: October 15, 2024Assignee: FUJIFILM BUSINESS INNOVATION CORP.Inventors: Satoshi Inada, Kenichi Ono, Takeshi Minamiru, Akemi Murakami, Junichiro Hayakawa, Tsutomu Otsuka
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Patent number: 12094620Abstract: A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A radioisotope source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material. The devices can be connected in series or parallel.Type: GrantFiled: September 18, 2023Date of Patent: September 17, 2024Assignee: City Labs, Inc.Inventor: Peter Cabauy
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Patent number: 12095228Abstract: A laser comprising a laser cavity formed by a first optical reflector, a gain region, a second optical reflector having a plurality of reflection peaks, and at least one optically active region. The first mirror may be a DBR or comb mirror and the second mirror may be a comb mirror. The spectral reflectance of the second optical reflector is adjusted at least partially based on an electric signal received form the optically active region such that only one reflection peak is aligned with a cavity mode formed by the first and second reflector.Type: GrantFiled: June 19, 2023Date of Patent: September 17, 2024Assignee: Freedom Photonics LLCInventor: Gordon Barbour Morrison
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Patent number: 12074408Abstract: A light source structure includes a vertical cavity surface-emitting laser (VCSEL) device having a top surface and at least one side surface substantially perpendicular to and adjoining the top surface. The VCSEL device is configurable to output directed emission of light through the top surface. The light source structure also includes a light barrier surrounding at least a top portion of the VCSEL device and separated from the at least one side surface. The light barrier is configured to receive spontaneous emission out of the VCSEL device through the at least one side surface.Type: GrantFiled: October 16, 2019Date of Patent: August 27, 2024Assignee: META PLATFORMS TECHNOLOGIES, LLCInventors: Karol Constantine Hatzilias, Christopher Yuan Ting Liao, Robin Sharma
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Patent number: 12068585Abstract: The present invention discloses a VCSEL array that is divided into at least a first and a second area. The first area covers the center of the array and is surrounded by the second area. The first area would experience higher temperature than the second area after the VCSELs in both areas are turned on for a given time period. VCSELs in the first area are electrically connected to a first metal layer portion. VCSELs in the second area are electrically connected to a second metal layer portion. The first and second metal layer portions are electrically insulated from each other.Type: GrantFiled: November 7, 2018Date of Patent: August 20, 2024Inventors: Yang Wang, Yongxiang He, Siva Lanka, Dongseok Kang
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Patent number: 12034100Abstract: A semiconductor light-emitting device includes: a semiconductor light-emitting element; a submount configured to have mounted thereon the semiconductor light-emitting element; and the like. The semiconductor light-emitting element includes a light guide layer, and a taper waveguide configured to cause light generated in the light guide layer to propagate. An equivalent refractive index of the taper waveguide is, in a predetermined range from an end face of the taper waveguide, higher at a center in a width direction of the taper waveguide than on outer sides in the width direction of the taper waveguide.Type: GrantFiled: October 7, 2019Date of Patent: July 9, 2024Assignee: PANASONIC HOLDINGS CORPORATIONInventor: Masao Kawaguchi
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Patent number: 12027823Abstract: A semiconductor laser includes: a multi-quantum well layer in a mesa structure; a buried layer comprising a semi-insulating semiconductor, the buried layer being in contact with each of both sides of the mesa structure; a first cladding layer with a first conductivity type, the first cladding layer having a lower refractive index than the multi-quantum well layer; a high refractive index layer configured to not absorb light oscillating in the multi-quantum well layer, the high refractive index layer having a higher refractive index than the first cladding layer; a diffraction grating layer at least partially constituting a diffraction grating capable of diffracting the light oscillating in the multi-quantum well layer, the diffraction grating layer not contacting the high refractive index layer; a substrate with the first conductivity type; and a second cladding layer with a second conductivity type above the multi-quantum well layer.Type: GrantFiled: September 30, 2021Date of Patent: July 2, 2024Assignee: Lumentum Japan, Inc.Inventors: Shoko Yokokawa, Atsushi Nakamura
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Patent number: 12025861Abstract: An optoelectronic device. The device comprising: a multi-layered optically active stack, including one or more layers comprising a III-V semiconductor material; an input waveguide, arranged to guide light into the stack; and an output waveguide, arranged to guide light out of the stack. The multi-layered optically active stack is butt or edge coupled to the input waveguide and output waveguide.Type: GrantFiled: December 18, 2019Date of Patent: July 2, 2024Assignee: Rockley Photonics LimitedInventors: Guomin Yu, Aaron John Zilkie
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Patent number: 11990728Abstract: A light emitting device includes: a package having a light extraction face that has a light transmitting region; a first light emitting element disposed in the package and having an emission face configured to emit light that diverges; an optical member disposed in the package, wherein light emitting from the first light emitting element is incident on the optical member, and wherein the optical member is configured to reflect a portion of the incident light and to transmit a remainder of the incident light therethrough; and a photodetector disposed in the package and having a light receiving face configured to receive the light emitted from the first light emitting element and reflected by the optical member. The light emitted from the first light emitting element and transmitted through the optical member exits from the package through the light transmitting region.Type: GrantFiled: May 25, 2021Date of Patent: May 21, 2024Assignee: NICHIA CORPORATIONInventors: Soichiro Miura, Takuya Hashimoto
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Patent number: 11985849Abstract: A polarizer and a manufacturing method thereof, a display panel, and a display device are provided. The polarizer includes a polarizing layer, and the polarizing layer includes a first polarizing region and a second polarizing region. A light transmittance of the first polarizing region is greater than a light transmittance of the second polarizing region, and a ratio of the light transmittance of the first polarizing region to the light transmittance of the second polarizing region is 1.1:1 to 2.6:1.Type: GrantFiled: November 9, 2020Date of Patent: May 14, 2024Assignees: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Chi Yu, Yu Zhang, Weiyun Huang, Zhenli Zhou
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Patent number: 11982834Abstract: A microstructured optical fiber for generating supercontinuum light. The optical fiber includes a core and a cladding region surrounding the core. The optical fiber includes a first fiber length section, a second fiber length section as well as an intermediate fiber length section between said first and second fiber length sections. The first fiber length section has a core with a first characteristic core diameter larger than about 7 ?m. The second fiber length section has a core with a second characteristic core diameter, smaller than said first characteristic core diameter. The intermediate length section of the optical fiber includes a core which is tapered from said first characteristic core diameter to the second characteristic core diameter over a tapered length. Also, a supercontinuum light source including an optical fiber and a pump light source.Type: GrantFiled: December 8, 2021Date of Patent: May 14, 2024Assignee: NKT PHOTONICS A/SInventors: Carsten L. Thomsen, Thomas T. Alkeskjold, Erik B. Thomsen
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Patent number: 11971573Abstract: An optical coupler includes: a plurality of waveguide core layers formed from a waveguide core material having a first index of refraction, the waveguide core layers being (i) arranged in a stacked relationship one over another, (ii) spaced apart one from another and (iii) extending from a light receiving end of the optical coupler longitudinally through the optical coupler toward a light output end of the optical coupler; and a cladding formed from a cladding material having a second index of refraction, the second index of refraction being less than the first index of refraction, the cladding material surrounding each of the plurality of waveguide core layers. Suitably, light propagating within outer ones of the plurality of waveguide core layers is directed toward an interior one of the plurality of waveguide core layers via evanescent coupling between adjacent ones of the plurality of waveguide core layers.Type: GrantFiled: June 6, 2022Date of Patent: April 30, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tai-Chun Huang, Stefan Rusu
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Patent number: 11936421Abstract: An optically-monitored and/or optically-controlled electronic device is described. The device includes at least one of a semiconductor transistor or a semiconductor diode. An optical detector is configured to detect light emitted by the at least one of the semiconductor transistor or the semiconductor diode during operation. A signal processor is configured to communicate with the optical detector to receive information regarding the light detected. The signal processor is further configured to provide information concerning at least one of an electrical current flowing in, a temperature of, or a condition of the at least one of the semiconductor transistor or the semiconductor diode during operation.Type: GrantFiled: February 23, 2023Date of Patent: March 19, 2024Assignees: THE REGENTS OF THE UNIVERISTY OF CALIFORNIA, THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVYInventors: Keith Corzine, Todd Weatherford, Matthew Porter
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Patent number: 11923660Abstract: An optoelectronic semiconductor component is provided that includes a primary light source and a secondary light source. The primary light source and the secondary light source are monolithically integrated in the semiconductor component so that only condensed matter is located between them. The primary light source includes a first resonator containing a semiconductor layer sequence which is electrically pumped during operation. A first resonator axis of the first resonator is oriented parallel to a growth direction (G) of the semiconductor layer sequence. The primary light source is configured to generate pump laser radiation (P). The secondary light source includes a pump medium for generating secondary radiation (S) and the pump medium is optically pumped by the pump laser radiation (P). The first resonator axis points past the pump medium.Type: GrantFiled: June 6, 2019Date of Patent: March 5, 2024Assignee: OSRAM OLED GMBHInventors: Bernhard Stojetz, Christoph Eichler, Alfred Lell, Sven Gerhard
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Patent number: 11923656Abstract: A laser device is provided which comprises a common waveguide layer and a plurality of laser bodies, wherein each of the laser bodies has an active region configured for generating coherent electromagnetic radiation. The laser bodies are arranged side by side on the common waveguide layer, wherein the laser bodies are directly adjacent to the common waveguide layer. In particular, the laser bodies are configured to be phase-coupled to each other via the waveguide layer during operation of the laser device. Furthermore, a method for producing such a phase-coupled laser device is provided.Type: GrantFiled: August 9, 2019Date of Patent: March 5, 2024Assignee: OSRAM OLED GmbHInventors: Bruno Jentzsch, Alexander Behres, Hans-Jürgen Lugauer
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Patent number: 11916351Abstract: Methods, devices and systems for improving single-frequency operation of diode lasers are described. One such method includes ramping up an operational current of a diode laser for a first predetermined number of steps, and measuring an associated current value indicative of optical power within the laser diode for each of the first predetermined number of steps. Next, operational current of the diode laser is ramped down for a second predetermined number of steps, and an associated current value indicative of optical power within the laser diode is measured for each of the second predetermined number of steps. Using the measured data current values at which a mode hop or a multimode operation is likely to occur are identified, and a contiguous range of operating currents that is devoid of identified likely mode hops or multimode regions of operation is determined as the operating current range of the diode laser.Type: GrantFiled: July 26, 2019Date of Patent: February 27, 2024Assignee: Arizona Board of Regents on Behalf of the University of ArizonaInventor: Yushi Kaneda
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Patent number: 11901698Abstract: A method of operating an optoelectronic device comprising an optical waveguide section, the optical waveguide section comprising a semiconductor core, the method comprising the steps of determining (401) a range for a negative bias voltage for the waveguide section for which an optical loss of the core is lower than an optical loss at zero bias for an operating wavelength range of the device, selecting (402) a bias voltage within the range and applying (403) the selected bias voltage to the waveguide section.Type: GrantFiled: December 21, 2018Date of Patent: February 13, 2024Assignee: Lumentum Technology UK LimitedInventors: Selina Farwell, Robert Griffin, Samuel Davies
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Patent number: 11862935Abstract: A 1.3 ?m-band wavelength-tunable DBR laser in which a wavelength-tunable amount is extended is disclosed. The wavelength-tunable DBR laser according to an embodiment of the present invention is a wavelength-tunable DBR laser in which an active region having an optical gain and a DBR region including a diffraction grating are integrated monolithically and an oscillation wavelength is changed by injecting a current into the DBR region. At a boundary between a p-side clad layer and a core layer in the DBR region, an electron barrier layer being p-type doped and having a bandgap greater than in the p-side clad layer is further included. At a boundary between an n-side clad layer and the core layer in the DBR region, a hole barrier layer being n-type doped and having a bandgap greater than in the n-side clad layer is further included.Type: GrantFiled: May 30, 2019Date of Patent: January 2, 2024Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATIONInventors: Takahiko Shindo, Naoki Fujiwara
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Patent number: 11837851Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.Type: GrantFiled: September 14, 2022Date of Patent: December 5, 2023Assignee: GlobalFoundries U.S. Inc.Inventors: Yusheng Bian, Roderick A. Augur, Michal Rakowski, Kenneth J. Giewont, Karen A. Nummy
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Patent number: 11837769Abstract: An apparatus, including a waveguide, a first circuit, a second circuit. The waveguide is connected to the first circuit and the second circuit. The first circuit is located within a cryostat.Type: GrantFiled: June 21, 2021Date of Patent: December 5, 2023Assignee: Abu Dhabi UniversityInventors: Montasir Yousof Abdallah Qasymeh, Hichem El Euch
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Patent number: 11808995Abstract: Structures for an edge coupler and methods of fabricating such structures. The structure includes a back-end-of-line stack located over a substrate. The back-end-of-line stack includes a waveguide core having a longitudinal axis and a tapered section with a width that varies with position along the longitudinal axis based on a non-linear function.Type: GrantFiled: March 29, 2022Date of Patent: November 7, 2023Assignee: GlobalFoundries U.S. Inc.Inventor: Yusheng Bian
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Patent number: 11804694Abstract: Provided are a laser device and a method of transforming laser spectrum, which provide a laser frequency stabilization and significant narrowing a laser spectrum. A laser device includes at least one multiple longitudinal mode laser (L) for generating a laser light having a spectrum of multiple longitudinal modes; at least one high quality factor (high-Q) microresonator (M) optically feedback coupled to the at least one multiple longitudinal mode laser (L); and a tuner (TU) for tuning the spectrum of multiple longitudinal modes of the laser light. The laser device is configured to output an output laser light having an output spectrum with at least one dominant longitudinal laser mode each at a reduced linewidth of the dominant longitudinal laser mode. The laser device allows increasing an emission power of a narrow linewidth lasing without an additional amplification while keeping a compact size of a device with a limited number of optical elements.Type: GrantFiled: March 23, 2020Date of Patent: October 31, 2023Assignees: SAMSUNG ELECTRONICS CO., LTD., INTERNATIONAL CENTER FOR QUANTUM OPTICS & QUANTUM TECHNOLOGIES LIMITED LIABILITY COMPANYInventors: Igor Antonovich Bilenko, Vitali Valentinovich Vasiliev, Andrey Sergeevich Voloshin, Sergey Nikolaevich Koptyaev, Grigoriy Vasil'evich Lihachev, Valery Evgenievich Lobanov, Nikolay Genad'evich Pavlov, Stanislav Vladimirovich Polonsky, Maxim Vladimirovich Riabko, Alexey Andreevich Shchekin
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Patent number: 11791902Abstract: A photonics frequency comb generator includes two integrated dies: an indium phosphide die laser of a first wavelength is grown on from, and a silicon photonics die having a microring resonator connected to the laser and frequency modulators. The microring resonator converts the first wavelength into a number of second wavelengths. One type of the microring resonator is a hybrid non-linear optical wavelength generator, comprising non-silicon materials, such as SiC or SiGe built on silicon to yield a non-linear wavelength generation. The second wavelengths are generated by adjusting the ring's geometric size and a distance between the ring and the traverse waveguide. Another type of microring resonator splits the first wavelength into a plurality of second wavelengths and transmits the multiple second wavelengths to filters and modulators, and each selects and modulates one of the second wavelengths in a one-to-one relationship.Type: GrantFiled: January 12, 2021Date of Patent: October 17, 2023Assignee: MELLANOX TECHNOLOGIES, LTD.Inventors: Juan Jose Vegas Olmos, Elad Mentovich, Paraskevas Bakopoulos, Dimitrios Kalavrouziotis
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Patent number: 11768337Abstract: Structures for a coupler and methods of forming a structure for a coupler. A structure for a directional coupler may include a first waveguide core having one or more first airgaps and a second waveguide core including one or more second airgaps. The one or more second airgaps are positioned in the second waveguide core adjacent to the one or more first airgaps in the first waveguide core. A structure for an edge coupler is also provided in which the waveguide core of the edge coupler includes one or more airgaps.Type: GrantFiled: June 29, 2021Date of Patent: September 26, 2023Assignee: GlobalFoundries U.S. Inc.Inventors: Spencer Porter, Mark Levy, Siva P. Adusumilli, Yusheng Bian
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Patent number: 11761892Abstract: Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.Type: GrantFiled: August 20, 2021Date of Patent: September 19, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Jerry R. Meyer, Igor Vurgaftman, Chadwick Lawrence Canedy, William W. Bewley, Chul Soo Kim, Charles D. Merritt, Michael V. Warren, R. Joseph Weiblen, Mijin Kim
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Patent number: 11757251Abstract: A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.Type: GrantFiled: October 11, 2022Date of Patent: September 12, 2023Assignee: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.Inventor: Arkadiy Lyakh
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Patent number: 11757259Abstract: The invention relates to an edge-emitting semiconductor laser comprising —at least two laser diodes, each of which is designed to generate electromagnetic radiation, wherein —the laser diodes are arranged on top of one another in a vertical direction, —the laser diodes are monolithically connected to one another, and —at least one frequency-stabilizing element is arranged in an end region of the laser diodes. The invention also relates to a method for producing an edge-emitting semiconductor laser.Type: GrantFiled: August 18, 2020Date of Patent: September 12, 2023Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventor: Martin Mueller
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Patent number: 11757249Abstract: A substrate for mounting a light-emitting element includes a substrate with a plate shape and a base that protrudes from a front surface of the substrate, wherein the base has a mounting part for mounting a light-emitting element on a top surface thereof and composes a sloping surface that slopes with respect to the front surface and the substrate and the base are integrally formed of a ceramic.Type: GrantFiled: November 19, 2018Date of Patent: September 12, 2023Assignee: KYOCERA CorporationInventor: Youji Furukubo
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Patent number: 11747658Abstract: Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In1-xGaxN/GaN multiple quantum wells (MQWs). In-rich InxGa1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.Type: GrantFiled: August 26, 2022Date of Patent: September 5, 2023Assignee: Texas Tech University SystemInventors: Hongxing Jiang, Changzhi Li, Jing Li, Jingyu Lin
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Patent number: 11749965Abstract: A transistor for emitting laser with a fixed frequency includes a first region, a second region, at least one quantum well, and a third region. The at least one quantum well is installed in the second region, and the second region is coupled between the first region and the third region. When one of the first region, the second region, and the third region receives two signals, or two of the first region, the second region, and the third region receive the two signals respectively, the at least one quantum well emits the laser with the fixed frequency.Type: GrantFiled: July 14, 2020Date of Patent: September 5, 2023Assignee: National Taiwan UniversityInventors: Chao-Hsin Wu, Chien-Ting Tung, Shu-Wei Chang
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Patent number: 11728898Abstract: A method of power control of an optical signal transmitted by a first network element. The first network element comprising a laser and a bandpass filter operating on the optical signal produced by said laser, whereas the method comprises receiving (106) information indicative of a power level of the optical signal transmitted by the first network element; and tuning (110) the laser output wavelength in response to said received information.Type: GrantFiled: May 31, 2019Date of Patent: August 15, 2023Assignee: Telefonaktiebolaget LM Ericsson (Publ)Inventors: Roberto Magri, Alberto Deho, Riccardo Ceccatelli
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Patent number: 11728620Abstract: Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.Type: GrantFiled: December 26, 2018Date of Patent: August 15, 2023Assignee: Princeton Optronics, Inc.Inventors: Chuni Ghosh, Guoyang Xu, Qing Wang
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Patent number: 11721951Abstract: A laser comprising a laser cavity formed by a first optical reflector, a gain region, a second optical reflector having a plurality of reflection peaks, and at least one optically active region. The first mirror may be a DBR or comb mirror and the second mirror may be a comb mirror. The spectral reflectance of the second optical reflector is adjusted at least partially based on an electric signal received form the optically active region such that only one reflection peak is aligned with a cavity mode formed by the first and second reflector.Type: GrantFiled: September 15, 2020Date of Patent: August 8, 2023Assignee: Freedom Photonics LLCInventor: Gordon Barbour Morrison
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Patent number: 11709135Abstract: Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.Type: GrantFiled: August 20, 2021Date of Patent: July 25, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NawInventors: Jerry R. Meyer, Igor Vurgaftman, Chadwick Lawrence Canedy, William W. Bewley, Chui Soo Kim, Charles D. Merritt, Michael V. Warren, R. Joseph Weiblen, Mijin Kim
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Patent number: 11705691Abstract: A light source device includes: a laser diode including an emission end surface for emitting laser light and a rear end surface opposite to the emission end surface; a reflecting member that reflects a portion of the laser light emitted from the emission end surface of the laser diode; a photodetector configured to detect light that is reflected at the reflecting member; and a light-shielding member disposed between the rear end surface of the laser diode and the photodetector, the light-shielding member configured to shield at least a portion of light emitted from the rear end surface of the laser diode.Type: GrantFiled: May 31, 2022Date of Patent: July 18, 2023Assignee: NICHIA CORPORATIONInventor: Tadaaki Miyata
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Patent number: 11681166Abstract: A wideband electro-absorption modulating (EAM) device is configured to include a ground shield that functions to minimize the spread of an applied AC voltage beyond the limits of the modulator's electrode. The ground shield includes a grounding electrode disposed in a spaced-apart relationship with the modulator electrode along the ridge of the EAM structure, and a grounding termination used to couple the grounding electrode to a suitable ground location. The ground location may be either on-chip (such as the DC ground of the modulator itself) or off-chip (via an off-chip capacitor, with a wirebond connecting the grounding electrode to the capacitor). The use of a ground shield mitigates the effects that changes in the data rate have on effective length of the modulator as seen by the applied data signal.Type: GrantFiled: October 28, 2020Date of Patent: June 20, 2023Assignee: II-VI Delware, Inc.Inventors: David Adams, Andrei Kaikkonen, Nicolae Chitica
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Patent number: 11677212Abstract: The invention relates to a semiconductor laser diode (1) comprising: —a semiconductor layer sequence (2) having an active region (20) provided for generating radiation; —a radiation decoupling surface (10) which extends perpendicular to a main extension plane of the active region; —a main surface (11) which delimits the semiconductor layer sequence in the vertical direction; —a contact layer (3) which adjoins the main surface; and —a heat-dissipating layer (4), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.Type: GrantFiled: September 20, 2018Date of Patent: June 13, 2023Assignee: OSRAM OLED GMBHInventors: Alexander Bachmann, Roland Heinrich Enzmann, Michael Müller
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Patent number: 11675128Abstract: End-face coupling structures within an electrical backend are provided via photonic integrated circuit (PIC), comprising: a first plurality of spacer layers; a second plurality of etch-stop layers, wherein each etch-stop layer of the second plurality of etch-stop layers is located between two spacer layers of the first plurality of spacer layers; and an optical coupler comprising a plurality of waveguides arranged as a waveguide array configured to receive an optical signal in a direction of travel, wherein each waveguide of the plurality of waveguides is located at a layer interface defined between an etch-stop layer and a spacer layer. Portions of the PIC can be formed by depositing layers of spacer and etch-stop materials in which cavities are formed to define the waveguides when the waveguide material is deposited or interconnects when a metal is deposited therein.Type: GrantFiled: February 18, 2021Date of Patent: June 13, 2023Assignee: Cisco Technology, Inc.Inventors: Roman Bruck, Thierry J. Pinguet, Attila Mekis
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Patent number: 11658463Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.Type: GrantFiled: October 9, 2020Date of Patent: May 23, 2023Assignee: Sony Group CorporationInventors: Tomoyuki Oki, Yuji Masui, Yoshinori Yamauchi, Rintaro Koda, Takahiro Arakida
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Patent number: 11658459Abstract: Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.Type: GrantFiled: July 16, 2018Date of Patent: May 23, 2023Assignee: MACOM Technology Solutions Holdings, Inc.Inventors: Roe Hemenway, Cristian Stagarescu, Daniel Meerovich, Malcolm R. Green, Wolfgang Parz, Jichi Ma, Richard Robert Grzybowski, Nathan Bickel
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Patent number: 11652190Abstract: The present disclosure is a light-emitting diode (LED) with oxidized aluminum nitride (oxidized-AlN) film, which includes a substrate, an aluminum nitride buffer (AlN-buffer) layer, an oxidized-AlN film and a light-emitting diode epitaxial structure. The AlN-buffer layer is disposed on a patterned surface of the substrate, wherein the patterned surface is formed with a plurality of protrusions and a bottom portion. The oxidized-AlN film is disposed on the AlN-buffer layer on the protrusions, and with none disposed on the AlN-buffer layer on the bottom portion. The LED epitaxial structure includes gallium nitride compound crystal formed on the oxidized-AlN film and the AlN-buffer layer, to effectively reduce defect density of the gallium nitride compound crystal and to improve a luminous intensity of the LED.Type: GrantFiled: March 17, 2021Date of Patent: May 16, 2023Assignee: SKY TECH INC.Inventor: Jing-Cheng Lin
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Patent number: 11637409Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.Type: GrantFiled: June 5, 2019Date of Patent: April 25, 2023Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Takahiro Sugiyama, Yuu Takiguchi, Yoshitaka Kurosaka, Kazuyoshi Hirose, Yoshiro Nomoto, Soh Uenoyama
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Patent number: 11631962Abstract: A light source includes a substrate with a first surface and an opposite second surface. An epitaxial layer is positioned on the first surface of the substrate. The light source also includes at least one light generator in the epitaxial layer positioned such that an optical signal transmitted thereby is directed toward the substrate. A diffuser is positioned on the second surface of the substrate, and at least one monitor photodetector is positioned in the epitaxial layer in an arrangement configured to receive a portion of the optical signal which is reflected by the diffuser. In one form, the light generator may include a vertical cavity surface emitting laser (VCSEL).Type: GrantFiled: May 8, 2020Date of Patent: April 18, 2023Assignee: II-VI DELAWARE, INC.Inventor: Hao Chen
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Patent number: 11621542Abstract: A laser array (100) is described herein, wherein the laser array comprises semiconductor lasers (102, 104) that are precisely controlled such that an optical beam output by the laser array has desired shape and direction.Type: GrantFiled: November 16, 2018Date of Patent: April 4, 2023Inventor: Murat Okandan
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Patent number: 11605618Abstract: An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.Type: GrantFiled: March 17, 2021Date of Patent: March 14, 2023Assignee: AVICENATECH CORP.Inventors: Michael Krames, Bardia Pezeshki, Robert Kalman, Cameron Danesh
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Patent number: 11552454Abstract: Integrated laser sources emitting multi-wavelengths of light with reduced thermal transients and crosstalk and methods for operating thereof are disclosed. The integrated laser sources can include one or more heaters and a temperature control system to maintain a total thermal load of the gain segment, the heater(s), or both of a given laser to be within a range based on a predetermined target value. The system can include electrical circuitry configured to distribute current to the gain segment, the heater(s), or both. The heater(s) can be located proximate to the gain segment, and the distribution of current can be based on the relative locations. In some examples, the central laser can be heated prior to being activated. In some examples, one or more of the plurality of lasers can operate in a subthreshold operation mode when the laser is not lasing to minimize thermal perturbations to proximate lasers.Type: GrantFiled: September 26, 2018Date of Patent: January 10, 2023Assignee: Apple Inc.Inventors: Mark Alan Arbore, Gary Shambat, Miikka M. Kangas, Ross M. Audet, Jeffrey G. Koller
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Patent number: 11532924Abstract: A distributed feedback (DFB) laser array includes a substrate, a semiconductor stacked structure, a first electrode layer, and a second electrode layer. The semiconductor stacked structure is formed above a surface of the substrate and includes two light-emitting modules and a tunnel junction. Each light-emitting module of the two light-emitting modules includes an active layer, a first cladding layer, and a second cladding layer. The active layer is installed between the first cladding layer and the second cladding layer, and the active layer has multiple lasing spots along a first direction, wherein the multiple lasing spots are used for generating multiple lasers. The tunnel junction is installed between the two light-emitting modules. The first electrode layer is formed above the semiconductor stacked structure. The second electrode layer is formed above another surface of the substrate.Type: GrantFiled: July 27, 2020Date of Patent: December 20, 2022Assignee: National Taiwan UniversityInventors: Chao-Hsin Wu, Chieh Lo
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Patent number: 11525967Abstract: This disclosure relates to the layout of optical components included in a photonics integrated circuit (PIC) and the routing of optical traces between the optical components. The optical components can include light sources, a detector array, and a combiner. The optical components can be located in different regions of a substrate of the PIC, where the regions may include one or more types of active optical components, but also may exclude other types of active optical components. The optical traces can include a first plurality of optical traces for routing signals between light sources and a detector array, where the first plurality of optical traces can be located in an outer region of the substrate. The optical traces can also include a second plurality of optical traces for routing signals between the light sources and a combiner, where the second plurality of optical traces can be located in regions between banks of the light sources.Type: GrantFiled: September 25, 2019Date of Patent: December 13, 2022Inventors: Alfredo Bismuto, Mark Arbore, Jason Pelc, Hooman Abediasl, Andrea Trita