Abstract: A wideband electro-absorption modulating (EAM) device is configured to include a ground shield that functions to minimize the spread of an applied AC voltage beyond the limits of the modulator's electrode. The ground shield includes a grounding electrode disposed in a spaced-apart relationship with the modulator electrode along the ridge of the EAM structure, and a grounding termination used to couple the grounding electrode to a suitable ground location. The ground location may be either on-chip (such as the DC ground of the modulator itself) or off-chip (via an off-chip capacitor, with a wirebond connecting the grounding electrode to the capacitor). The use of a ground shield mitigates the effects that changes in the data rate have on effective length of the modulator as seen by the applied data signal.

Abstract: The invention relates to a semiconductor laser diode (1) comprising: —a semiconductor layer sequence (2) having an active region (20) provided for generating radiation; —a radiation decoupling surface (10) which extends perpendicular to a main extension plane of the active region; —a main surface (11) which delimits the semiconductor layer sequence in the vertical direction; —a contact layer (3) which adjoins the main surface; and —a heat-dissipating layer (4), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.

Abstract: End-face coupling structures within an electrical backend are provided via photonic integrated circuit (PIC), comprising: a first plurality of spacer layers; a second plurality of etch-stop layers, wherein each etch-stop layer of the second plurality of etch-stop layers is located between two spacer layers of the first plurality of spacer layers; and an optical coupler comprising a plurality of waveguides arranged as a waveguide array configured to receive an optical signal in a direction of travel, wherein each waveguide of the plurality of waveguides is located at a layer interface defined between an etch-stop layer and a spacer layer. Portions of the PIC can be formed by depositing layers of spacer and etch-stop materials in which cavities are formed to define the waveguides when the waveguide material is deposited or interconnects when a metal is deposited therein.

Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Abstract: Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.

Abstract: The present disclosure is a light-emitting diode (LED) with oxidized aluminum nitride (oxidized-AlN) film, which includes a substrate, an aluminum nitride buffer (AlN-buffer) layer, an oxidized-AlN film and a light-emitting diode epitaxial structure. The AlN-buffer layer is disposed on a patterned surface of the substrate, wherein the patterned surface is formed with a plurality of protrusions and a bottom portion. The oxidized-AlN film is disposed on the AlN-buffer layer on the protrusions, and with none disposed on the AlN-buffer layer on the bottom portion. The LED epitaxial structure includes gallium nitride compound crystal formed on the oxidized-AlN film and the AlN-buffer layer, to effectively reduce defect density of the gallium nitride compound crystal and to improve a luminous intensity of the LED.

Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

Abstract: A light source includes a substrate with a first surface and an opposite second surface. An epitaxial layer is positioned on the first surface of the substrate. The light source also includes at least one light generator in the epitaxial layer positioned such that an optical signal transmitted thereby is directed toward the substrate. A diffuser is positioned on the second surface of the substrate, and at least one monitor photodetector is positioned in the epitaxial layer in an arrangement configured to receive a portion of the optical signal which is reflected by the diffuser. In one form, the light generator may include a vertical cavity surface emitting laser (VCSEL).

Abstract: A laser array (100) is described herein, wherein the laser array comprises semiconductor lasers (102, 104) that are precisely controlled such that an optical beam output by the laser array has desired shape and direction.

Abstract: An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.

Abstract: Integrated laser sources emitting multi-wavelengths of light with reduced thermal transients and crosstalk and methods for operating thereof are disclosed. The integrated laser sources can include one or more heaters and a temperature control system to maintain a total thermal load of the gain segment, the heater(s), or both of a given laser to be within a range based on a predetermined target value. The system can include electrical circuitry configured to distribute current to the gain segment, the heater(s), or both. The heater(s) can be located proximate to the gain segment, and the distribution of current can be based on the relative locations. In some examples, the central laser can be heated prior to being activated. In some examples, one or more of the plurality of lasers can operate in a subthreshold operation mode when the laser is not lasing to minimize thermal perturbations to proximate lasers.

Abstract: A distributed feedback (DFB) laser array includes a substrate, a semiconductor stacked structure, a first electrode layer, and a second electrode layer. The semiconductor stacked structure is formed above a surface of the substrate and includes two light-emitting modules and a tunnel junction. Each light-emitting module of the two light-emitting modules includes an active layer, a first cladding layer, and a second cladding layer. The active layer is installed between the first cladding layer and the second cladding layer, and the active layer has multiple lasing spots along a first direction, wherein the multiple lasing spots are used for generating multiple lasers. The tunnel junction is installed between the two light-emitting modules. The first electrode layer is formed above the semiconductor stacked structure. The second electrode layer is formed above another surface of the substrate.

Abstract: This disclosure relates to the layout of optical components included in a photonics integrated circuit (PIC) and the routing of optical traces between the optical components. The optical components can include light sources, a detector array, and a combiner. The optical components can be located in different regions of a substrate of the PIC, where the regions may include one or more types of active optical components, but also may exclude other types of active optical components. The optical traces can include a first plurality of optical traces for routing signals between light sources and a detector array, where the first plurality of optical traces can be located in an outer region of the substrate. The optical traces can also include a second plurality of optical traces for routing signals between the light sources and a combiner, where the second plurality of optical traces can be located in regions between banks of the light sources.

Abstract: In integrated optical structures (e.g., silicon-to-silicon-nitride mode converters) implemented in semiconductor-on-insulator substrates, wire waveguides whose sidewalls substantially consist of portions coinciding with crystallographic planes and do not extend laterally beyond the top surface of the wire waveguide may provide benefits in performance and/or manufacturing needs. Such wire waveguides may be manufactured, e.g., using a dry-etch of the semiconductor device layer down to the insulator layer to form a wire waveguide with exposed sidewalls, followed by a smoothing crystallographic wet etch.

Abstract: The disclosure relates to an LED chip, an LED array and an LED packaging method. By adding a reflecting layer on the periphery of the LED, the reflecting layer adjusts the emission direction of light emitted by a light-emitting layer of the LED, so that the adjusted emission direction is more concentrated to a certain required illumination direction, and the light emitted by the light-emitting layer is prevented from irradiating adjacent LEDs and thereby causing interference to the adjacent LEDs. Therefore, according to the method provided by the disclosure, the light field directivity of the emitted light beam is improved, the embodiment is easy to operate with convenient implementation and improved LED performance, providing convenience for a user to use an LED lamp.

Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

Abstract: A laser system includes a resonant laser cavity configured to output a laser signal. The system also includes a utility waveguide configured to receive the laser signal from the laser cavity. The utility waveguide includes a perturbation region that is external to the laser cavity and receives the laser signal from the laser cavity and outputs a laser beam. The perturbation region includes one or more perturbation structures that each causes one or more perturbation(s) in the index of refraction of the utility waveguide. The perturbation structures are selected to provide optical feedback to the resonant laser cavity such that a power versus wavelength distribution in the laser beam is different from the power versus wavelength distribution that would be in the laser signal in the absence of the perturbation structures.

Abstract: A light emitting device includes a wiring board having a first wiring layer and a second wiring layer adjacent to the first wiring layer via an insulating layer, and a laser having a cathode electrode and an anode electrode, mounted on the wiring board, and driven through low-side driving. The first wiring layer includes a cathode wire connected to the cathode electrode, an anode wire connected to the anode electrode, and a first reference potential wire connected to a reference potential. The second wiring layer includes a second reference potential wire connected to the reference potential. An area of an overlap between the second reference potential wire and the anode wire is larger than an area of an overlap between the second reference potential wire and the first reference potential wire.

Abstract: An optical semiconductor device includes a semiconductor multilayer structure, an active region interposed between a first facet on a light emitting side and a second facet opposing to the first facet, and a first electrode layer provided on a top of the semiconductor multilayer structure and a second electrode layer provided on a bottom of the semiconductor multilayer structure; and an electrical connection region connected to at least one of the first electrode layer and the second electrode layer of the optical semiconductor device and used for injecting a current to the active region, and ?>? and ?>0 are satisfied where ? is the contact area included in a half region on the first facet side in a top area of the optical semiconductor device and ? is the contact area included in a half region on the second facet side.

Abstract: This application describes a wavelength-tunable laser apparatus, which reduces complexity of wavelength tuning of a laser. The laser includes a reflective gain unit, an optical phase shifter, a coupler, and a passive filter unit array. Furthermore, an output port of the reflective gain unit is connected to an input port of the optical phase shifter, an output port of the optical phase shifter is connected to an input port of the coupler, a first output port of the coupler is connected to an input port of the passive filter unit array, and a second output port of the coupler is an output port of the laser. The passive filter unit array includes a plurality of passive filter units, where any two of the plurality of passive filter units have different wavelength tuning ranges, and each filter unit has a linearly tunable wavelength.

Abstract: An optoelectronic device includes a semiconductor substrate and an optically-active structure, including epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack, a quantum well structure with P- and N-doped layers disposed respectively on opposing sides of the quantum well structure, and an upper DBR stack. Electrodes are coupled to apply a bias voltage between the P- and N-doped layers. Control circuitry, disposed on the substrate, is configured to apply a forward bias voltage between the electrodes so as to cause the optically-active structure to emit an optical pulse through the upper DBR stack, and then to reverse the bias voltage between the electrodes so as to cause the optically-active structure to output an electrical pulse to the control circuitry in response to incidence of one or more of the photons, due to reflection of the optical pulse, on the quantum well structure through the upper DBR stack.

Abstract: A light modulator for amplifying an intensity of incident light and modulating a phase of the incident light is provided. The light modulator includes: a first distributed Bragg reflector (DBR) layer having a first reflectivity and comprising at least two first refractive index layers that have different refractive indices from each other and are repeatedly alternately stacked; a second DBR layer having a second reflectivity and comprising at least two second refractive index layers that have different refractive indices from each other and are repeatedly alternately stacked; and an active layer disposed between the first DBR layer and the second DBR layer, and comprising a quantum well structure.

Abstract: An optical semiconductor device includes an insulative base having first and second surfaces, and a metallic pattern formed on the first surface and including a grounding pattern, a transmission pattern having a line connected between input and output ends thereof, and first and second patterns, where the first pattern is located between the second surface crossing a direction parallel to the first surface, and the second pattern. The device includes a laser chip, mounted on the first surface between the transmission pattern and the first and second patterns, and having an electrode and a light emitting end located between the electrode and the second surface, a first wire connecting the output end to the electrode, a second wire connecting the electrode to the first pattern, an inductor provided on the first surface connected between the first and second patterns and formed by a meander wiring or a bonding wire.

Abstract: An optical component includes: an upper surface; a lower surface; a first light reflecting surface extending at least partially between the upper surface and the lower surface, the first light reflecting surface comprising a flat surface; and a rounded region formed between the first light reflecting surface and the lower surface. An angular edge is located at a first light reflecting surface side of the upper surface.

Abstract: A laser emitter is provided, including a substrate and a dielectric mask layer located proximate to and above the substrate in a thickness direction. The dielectric mask layer may have a plurality of trenches formed therein. The plurality of trenches may have a plurality of different respective widths. The laser emitter may further include a respective nanowire located within each trench of the plurality of trenches. Each nanowire may include a first semiconductor layer located above the substrate in the thickness direction. Each nanowire may further include a quantum well layer located proximate to and above the first semiconductor layer in the thickness direction. Each nanowire may further include a second semiconductor layer located proximate to and above the quantum well layer in the thickness direction.

Abstract: A semiconductor optical integrated device comprises a semiconductor amplifier and a plurality of semiconductor lasers, wherein the semiconductor amplifier and the semiconductor lasers are monolithically integrated on a semiconductor substrate, an n-side cladding layer of the semiconductor amplifier and an n-side cladding layer of each of the semiconductor lasers are electrically insulated by an insulating layer formed between the semiconductor substrate and the n-side cladding layer of the semiconductor lasers and an insulating layer formed between the n-side cladding layer of the semiconductor amplifier and the n-side cladding layer of the semiconductor lasers, the n-side cladding layer of the semiconductor lasers and the p-side cladding layer of the semiconductor amplifier is configured to be electrically connected, and the semiconductor amplifier and each semiconductor laser of the plurality of semiconductor lasers are electrically connected in series.

Abstract: The present disclosure is directed to optoelectronic modules with substantially temperature-independent performance characteristics and host devices into which such optoelectronic modules can be integrated. In some instances, an optoelectronic module can collect proximity data using light-generating components and light-sensitive components that exhibit temperature-dependent performance characteristics. The light-generating components and light-sensitive components can be configured such that they exhibit complementing temperature-dependent performance characteristics such that the operating performance of the optoelectronic module is substantially temperature independent.

Abstract: A light source device includes: a base comprising a bottom portion and a peripheral wall portion; a semiconductor laser located on the bottom portion; a cap connected to an upper surface of the peripheral wall portion, wherein the cap and the base define a sealed space; a translucent portion located in the peripheral wall portion or the cap, the translucent portion being configured to transmit a beam emitted from the semiconductor laser; and first and second lead terminals located in the sealed space and crossing from a first inner surface of the peripheral wall portion to a second inner surface of the peripheral wall portion. The semiconductor laser is located between the two lead terminals. The translucent portion is located on an optical axis of the beam emitted from the semiconductor laser.

Abstract: A mount member includes first and second conduction parts. In the first conduction part, as seen in a top view, a length in a first direction parallel to an emission end surface of a first semiconductor laser element is smaller than a length in a second direction perpendicular to the emission end surface, and, in relation to the second direction, a first wiring region extends from a first mounting region in a direction from the light emission end surface to an opposite end surface. In relation to the second direction, a second conduction part extends further than the first conduction part in a direction from an emission end surface to an opposite end surface of a second semiconductor laser element, and from a region where the second conduction part extends further than the first conduction part, the second conduction part extends toward the first conduction part in the first direction.

Abstract: An optoelectronic device includes a semiconductor substrate and a monolithic array of light-emitting elements formed on the substrate. The light-emitting elements include a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array, and a second plurality of second emitters, configured to emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array.

Abstract: The present invention describes a system for changing the properties of the lenses to create changes in focus, magnification, and optical stabilization without changing the shape of the lens or moving the lenses. It uses an acoustic wave that when propagated through the lenses, creates a standing wave that changes the diffractive capabilities of the lens. It involves the properties of many materials to change the diffractive properties when subjected to acoustic waves. The acoustic waves are generally accomplished with a piezo electric transducer or modulator. The frequencies used are in the RF range, depending on the substrate. Substrates used include glass and silicon, as well as more esoteric transparent materials. The system described in the present invention involves the development of a lensing mechanism that comprises one or more acoustio-optic modulator(s), a transparent or semi-transparent substrate where the modulation is applied, and a non-parallel standing wave being propagated in the substrate.

Abstract: Provided is an optical spectrum line width calculation method, apparatus, and program capable of calculating a spectrum line width of a laser to be measured from an optical interference signal generated by an optical interferometer having a delay line, based on a phase of the optical interference signal having a delay time longer than a delay time due to the delay line. The optical spectrum line width measurement apparatus includes a Mach-Zehnder interferometer, an optical receiver that receives an optical interference signal emitted from the Mach-Zehnder interferometer, an A/D converter that converts an analog electric signal output from the optical receiver into a digital electric signal, and a processing apparatus that processes the digital electric signal. Two light beams having a delay difference ? are generated from light emitted from the laser to be measured, and an optical interference signal is generated by multiplexing the two light beams.

Abstract: The present disclosure relates to pretreating a magnetic recording head for magnetic media drive. For a heat assisted magnetic recording (HAMR) head, a light source provides the necessary heat for the drive to operation. A vertical cavity surface emitting laser (VCSEL) is mounted to a top surface of a slider. A plurality of laser beams are emitted from the bottom surface of the VCSEL and directed to a corresponding number of waveguide structures within the HAMR head. The waveguide structures feed into a multimode interference (MMI) device that then directs the laser into a single waveguide for focusing on a near field transducer (NFT). The VCSEL lasers are phase coherent and have no mode hopping.

Abstract: A tunable laser has a solid state laser medium with optical gain region and generates coherent radiation through a facet. A lens collects the coherent radiation and generates a collimated light beam. An external cavity includes a reflective surface and an optical filter, the reflective surface reflecting the collimated beam back to the lens and laser medium, the optical filter positioned between the reflective surface and the lens and having two surfaces and a thermally tunable optical transmission band within the optical gain region of the laser medium. The optical filter (1) transmits a predominant portion of the collimated beam at a desired wavelength of operation, and (2) specularly reflects a remaining portion of the collimated beam from each surface, the collimated beam being incident on the optical filter such that the reflected collimated beams propagate at a non-zero angle with respect to the incident collimated beam.

Abstract: Some embodiments relate to a generation device that includes: a pulsed laser source generating primary photons having at least one wavelength within pulses having time dissymmetry, a forming device(s) controlling the primary photons so as to generate a selective-polarization, focused input beam, and an optical fiber wherein the primary photons induce secondary photons having different wavelengths resulting from a raman conversion cascade and forming a wide-spectrum output beam having substantially constant energy.

Abstract: An acoustic sensor for sensing environmental attributes within an enclosure is disclosed. The acoustic sensor may include a bulk acoustic wave (BAW) transducer configured to be installed outside the enclosure. The BAW transducer may generate an acoustic wave pulse and receive a reflected acoustic wave pulse. The acoustic sensor may further a waveguide assembly configured to be installed inside the enclosure. The waveguide assembly configured to receive the acoustic wave pulse from the BAW transducer. The acoustic sensor may further include a sensing device, wherein the sensing device may determine a change in one or more acoustic wave propagation parameters, based on the generated acoustic wave pulse and the reflected acoustic wave pulse. The sensing device may further determine one or more environmental attributes within the enclosure, based on the change in the one or more acoustic wave propagation parameters.

Abstract: A method of forming a laser including device is provided that in one embodiment includes providing a laser chip including at least one ridge structure that provides an alignment features. The method further includes bonding a type IV photonics chip to the laser chip, wherein a vertical alignment feature from the type IV photonics chip is inserted in a recess relative to the at least one ridge structure that provides the alignment features of the laser structure.

Abstract: The present invention provides one or more injection-lockable whistle-geometry semiconductor ring lasers, which may be cascaded, that are integrated on a common silicon-on-insulator (SOI) substrate with a single-frequency semiconductor master laser, wherein the light output from the semiconductor master laser is used to injection-lock the first of the semiconductor ring lasers. The ring lasers can be operated in strongly injection-locked mode, while at least one of them is subjected to direct injection current modulation.

Abstract: The present invention provides a method for estimating a condition parameter of a laser diode having an associated photodiode, to an apparatus for monitoring the operation of such a laser diode, and to a particle sensor apparatus. The photodiode (PD) is operable together with the laser diode (LD), wherein it detects the light (LS) of the laser diode (LD) and converts it into an electrical current, and is thermally coupled to the laser diode (LD). The at least one condition parameter is estimated during the operation of the laser diode (LD) and the estimation is based on current measurements and/or voltage measurements at the laser diode (LD) and/or at the photodiode (PD).

Abstract: Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.

Abstract: Integrated-optics systems are presented in which an optically active device is optically coupled with a silicon waveguide via a passive compound-semiconductor waveguide. In a first region, the passive waveguide and the optically active device collectively define a composite waveguide structure, where the optically active device functions as the central ridge portion of a rib-waveguide structure. The optically active device is configured to control the vertical position of an optical mode in the composite waveguide along its length such that the optical mode is optically coupled into the passive waveguide with low loss. The passive waveguide and the silicon waveguide collectively define a vertical coupler in a second region, where the passive and silicon waveguides are configured to control the distribution of the optical mode along the length of the coupler, thereby enabling the entire mode to transition between the passive and silicon waveguides with low loss.

Abstract: An LED, a manufacturing method thereof, and a display device including an LED are provided. Specifically, the disclosure relates to a flip-chip LED with high efficiency including a current confinement structure and a manufacturing method thereof, and a display device including such an LED. In particular, a flip-chip LED according to the disclosure includes a resistive area that surrounds a light-emitting layer and restricts current flow from the light emitting layer to the sidewalls.

Abstract: A semiconductor optical device is provided with a semiconductor substrate that has a length and width, a laser section that is provided on the semiconductor substrate and includes an active layer and an optical waveguide section that is provided adjacent to the laser section on the semiconductor substrate and is joined to the laser section. The optical waveguide section includes a core layer that is connected to an end portion of the active layer, and a pair of cladding layers between which the core layer is sandwiched and emits, from an emission end surface, light incident from the joining interface between the optical waveguide section and the laser section. The semiconductor optical device may be also provided with a reflection suppression layer that is provided on the upper surface of the optical waveguide section.

Abstract: An integrated semiconductor optical amplifier-laser diode (SOA-LD) device includes a laser diode (LD) section fabricated on a substrate, a semiconductor optical amplifier (SOA) section fabricated on the substrate adjacent to the LD section; and a trench formed at least partially between the LD section and SOA section to electrically isolate the LD section and the SOA section while maintaining optical coupling between the LD section and the SOA section.

Abstract: Methods and structures for forming vertical-cavity light-emitting devices are described. An n-side or bottom-side layer may be laterally etched to form a porous semiconductor region and converted to a porous oxide. The porous oxide can provide a current-blocking and guiding layer that aids in directing bias current through an active area of the light-emitting device. Distributed Bragg reflectors may be fabricated on both sides of the active region to form a vertical-cavity surface-emitting laser. The light-emitting devices may be formed from III-nitride materials.

Abstract: A semiconductor vertical light source includes upper and lower mirrors with an active region in between, an inner mode confinement region, and an outer current blocking region that includes a common epitaxial layer including an epitaxially regrown interface between the active region and upper mirror. A conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer. The first and second impurity doped region force current flow into the conducting channel during normal operation of the light source.

Abstract: Embodiments of the present disclosure may relate to a digitized grating that may include a first unit cell that has a first period and a first length, where the first period includes a first grating element width and a first space between adjacent grating elements, and where the first length includes a number of first periods. The digitized grating may further include a second unit cell that has a second period and a second length, where the second period is different than the first period and includes a second grating element width and a second space between adjacent grating elements, and where the second length includes a number of second periods.

Abstract: Conventional integrated optical amplifiers, which combine different types of platforms, e.g. silicon photonic integrated circuit for the device layer, and a Group III-V material for the gain medium, typically include a curved waveguide extending through the gain medium coupled to waveguides in the main device layer. Unfortunately, the radius of curvature of the curved waveguide becomes a limiting factor for both size and amplification. Accordingly, an optical amplifier which eliminates the need for the curved waveguide by including a coupler for splitting an input optical signal into two sub-beams, for passage through the gain medium, and a reflector, such as a U-turn, for reflecting or redirecting the two sub-beams back through the gain medium to the coupler for recombination, would be a welcome improvement. A phase tuner may also be provided to ensure coherence cancellation between the two sub-beams to maximize output and minimize back reflection without requiring an isolator.

Abstract: A vertical cavity surface emitting laser includes a first laminate including first semiconductor layers having a first Al composition, and second semiconductor layers having a second Al composition greater than the first Al composition; a current confinement structure including a current aperture and a current blocker; a first compound semiconductor layer adjacent to the current confinement structure; and a second compound semiconductor layer adjacent to the first laminate and the first compound semiconductor layer. The first compound semiconductor layer has a first aluminum profile changing monotonously in a direction from the first laminate to the current confinement structure from a first minimum Al composition within a range greater than the first Al composition and smaller than the second Al composition to a first maximum Al composition. The second compound semiconductor layer has an Al composition greater than the first Al composition and smaller than the first maximum Al composition.