Abstract: Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.

Abstract: Methods and systems for an all-optical wafer acceptance test may include an optical transceiver on a chip, the optical transceiver comprising first, second, and third grating couplers, an interferometer comprising first and second phase modulators, a splitter, and a plurality of photodiodes. A first input optical signal may be received in the chip via the first grating coupler, where the first input optical signal may be coupled to the interferometer. An output optical signal may be coupled out of the chip via the second grating coupler for a first measurement of the interferometer. A second input optical signal may be coupled to a third grating coupler and a portion of the second input optical signal may be communicated to each of the plurality of photodiodes via the splitter. A voltage may be generated using the photodiodes based on the second input signal that may bias the first phase modulator.

Abstract: An optical chip includes multiple laser cavities that each reflects a different portion of a light signal back and forth between reflective components. Each laser cavity guides one of the light signal portions through one or more waveguides. The one or more waveguides from different laser cavities being optically coupled to one another. A combiner receives the light signal portion from each of the laser cavities and combines the light signal portions into a light signal.

Abstract: A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

Abstract: High-power, phased-locked, laser arrays as disclosed herein utilize a system of optical elements that may be external to the laser oscillator array. Such an external optical system may achieve mutually coherent operation of all the emitters in a laser array, and coherent combination of the output of all the lasers in the array into a single beam. Such an “external gain harness” system may include: an optical lens/mirror system that mixes the output of all the emitters in the array; a holographic optical element that combines the output of all the lasers in the array, and an output coupler that selects a single path for the combined output and also selects a common operating frequency for all the coupled gain regions.

Abstract: A multi-channel optical transmitter generally includes a first light source configured to emit light of a first wavelength, a second light source configured to emit light of a second wavelength, a first modulator configured to modulate the light of the first wavelength, and a second modulator configured to modulate the light of the second wavelength. The first modulator has a first anode and a first cathode, and the second modulator has a second anode and a second cathode electrically isolated from the first anode and the first cathode. The modulators (and optionally the light sources) are on a common substrate. A method of transmitting optical signals generally includes modulating light emitted from a first light source using a first modulator, and modulating light emitted from a second light source using a second modulator, where the first modulator receives a first modulation signal, and the second modulator receives a second modulation signal electrically isolated from the first modulation signal.

Abstract: Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.

Abstract: High-power, phased-locked, laser arrays as disclosed herein utilize a system of optical elements that may be external to the laser oscillator array. Such an external optical system may achieve mutually coherent operation of all the emitters in a laser array, and coherent combination of the output of all the lasers in the array into a single beam. Such an “external gain harness” system may include: an optical lens/mirror system that mixes the output of all the emitters in the array; a holographic optical element that combines the output of all the lasers in the array, and an output coupler that selects a single path for the combined output and also selects a common operating frequency for all the coupled gain regions.

Abstract: A semiconductor vertical resonant cavity light source includes an upper mirror and a lower minor that define a vertical resonant cavity. A first active region is within the vertical resonant cavity for light generation between the upper minor and lower mirror. The vertical resonant cavity includes an inner mode confinement region and an outer current blocking region. A depleted heterojunction current blocking region (DHCBR) is within the outer current blocking region of at least one of the upper minor, lower minor, and first active region. A conducting channel within the inner mode confinement region is framed by the DHCBR. The DHCBR forces current flow into the conducting channel during operation of the light source.

Abstract: High-power, phased-locked, laser arrays as disclosed herein utilize a system of optical elements that may be external to the laser oscillator array. Such an external optical system may achieve mutually coherent operation of all the emitters in a laser array, and coherent combination of the output of all the lasers in the array into a single beam. Such an “external gain harness” system may include: an optical lens/mirror system that mixes the output of all the emitters in the array; a holographic optical element that combines the output of all the lasers in the array, and an output coupler that selects a single path for the combined output and also selects a common operating frequency for all the coupled gain regions.

Abstract: A vertically integrated optical phased array has an array of a plurality of vertical cavity surface emitting lasers disposed in an aperiodic arrangement thereof, the plurality of vertical cavity surface emitting lasers having light emitting ports disposed parallel to one another. An array of a plurality of vertical cavity phase modulators disposed in the same aperiodic arrangement as the array of the plurality of vertical cavity surface emitting lasers, with individual modulators of said array of a plurality of vertical cavity phase modulators each being disposed in optical alignment with an injection port of a corresponding one of said plurality of vertical cavity surface emitting lasers.

Abstract: A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes.

Abstract: A semiconductor laser that includes an active region, claddings and electrical contacts to stimulate emissions from the active region, where a coupled waveguide guides emission. The waveguide includes a broad area straight coupling region that fans out into an array of narrower Individual curved coupled waveguides at an output facet of the laser. The individual curved coupled waveguides are curved according to Lorentzian functions that define the waveguide curvature as a function of position along the device. The integral length of each individual curved coupled waveguide differs from adjacent individual curved coupled waveguides by an odd number of half-wavelengths. The coupled waveguide array shapes the optical field output of the semiconductor laser such that a large fraction of the power is emitted into a small angular distribution using interference phenomena. A laser of the invention produces high power output with a very high quality, narrow beam shape.

Abstract: High-power, phased-locked, laser arrays as disclosed herein utilize a system of optical elements that may be external to the laser oscillator array. Such an external optical system may achieve mutually coherent operation of all the emitters in a laser array, and coherent combination of the output of all the lasers in the array into a single beam. Such an “external gain harness” system may include: an optical lens/mirror system that mixes the output of all the emitters in the array; a holographic optical element that combines the output of all the lasers in the array, and an output coupler that selects a single path for the combined output and also selects a common operating frequency for all the coupled gain regions.

Abstract: Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 ?m) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure; and a plurality of laterally-spaced trench regions extending transversely through the optical confinement and cladding structures, and partially into the QCL structure. The trench regions, each of which comprises a lower trench layer comprising a semi-insulating material and an upper trench layer comprising a material having a refractive index that is higher than that of the semi-insulating material, define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device.

Abstract: A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes.

Abstract: In one of the embodiments, a dark channel array is provided which includes gain channels, each configured to emit an output beam from an output surface and to have a light wave propagating therethrough. It further includes a dark channel configured to emit an output beam from the output surface of the dark channel array and to have a light wave propagating in the dark channel, such that output beams from the plurality of gain channels are coherently coupled in phase with each other. The dark channel array is configured such that the dark channel captures a portion of the output beam from at least two of the plurality of gain channels by radiant coupling.

Abstract: A laser cavity is provided by a reflecting spherical substrate with an array of emitters having a mode size. Each emitter has an axis aligned with a radius of the spherical substrate. A single mode waveguide is aligned with the array at an optical coupling distance less than the radius of the spherical substrate. A reflector substantially coincident with an end of the waveguide combines with the reflecting spherical substrate as a cavity.

Abstract: High-power, phased-locked, laser arrays as disclosed herein utilize a system of optical elements that may be external to the laser oscillator array. Such an external optical system may achieve mutually coherent operation of all the emitters in a laser array, and coherent combination of the output of all the lasers in the array into a single beam. Such an “external gain harness” system may include: an optical lens/mirror system that mixes the output of all the emitters in the array; a holographic optical element that combines the output of all the lasers in the array, and an output coupler that selects a single path for the combined output and also selects a common operating frequency for all the coupled gain regions.

Abstract: A multibeam laser apparatus and an image forming device using the same. The multibeam laser beam apparatus includes a common electrode unit, a plurality of light source units to emit light using the common electrode unit, and an isolating unit to interconnect the common electrode unit and the plurality of light source units. With such configuration for example, the laser apparatus can reduce distances between the respective light source units and the number of the electrodes, and thus reduce the number of wires and legs to produce a compact chip.

Abstract: Provided is a two-dimensional surface-emitting laser array that enables to dispose more elements in a smaller area and enables compact size, high resolution, and high speed thereof. The two-dimensional surface-emitting laser array includes surface-emitting laser elements arranged in a two-dimensional manner of m rows and n columns (m is an integer of two or larger, and n is an integer of three or larger). The interval between mesas for arranging electrical wirings for individually driving the surface-emitting laser elements is assigned so that the interval in the m row direction increases according to the number of the electrical wirings passing through between the mesas.

Abstract: A monolithic laser array (30) has a plurality of parallel laser elements (31-1, 31-2 . . . 31-16) configured such that there is significantly reduced bond pad metallization area and drive contact metallization area between adjacent pairs of laser elements. Each laser element has a waveguide (33) extending along its optical axis, a drive contact (34) extending along at least a portion of the waveguide (33), and a bond pad area (35) extending laterally from the drive contact. The laser elements are arranged in pairs of adjacent laser elements with each laser element of a pair having its bond pad area (35) extending laterally towards the other laser element of the pair and occupying a respective portion of the substrate surface between the laser elements of the pair. The substrate surface between pairs of laser elements is thereby substantially free of bond pad metallization to form an enhanced cleave area extending over the length of the array.

Abstract: A semiconductor laser device and an image display device that efficiently release a heat from stripe active regions, and operated at a low-consumption current and a low-consumption electric power. A semiconductor laser element includes stripe active regions for emitting laser beams. On a base block, there are formed wirings electrically connected to stripe laser electrodes of the semiconductor laser element, respectively. The stripe laser electrodes corresponding to the stripe active regions are formed in proximity to a first surface of the semiconductor laser element, close to the active regions. An electric current is supplied to the active regions from connecting portions between each of the laser electrodes and the wirings.

Abstract: A multi-section semiconductor laser diode is disclosed. The laser diode includes a complex-coupled DFB laser section that includes a complex-coupled grating and an active structure for controlling the intensity of oscillating laser light, to oscillate laser light in a single mode, and an external cavity including a phase control section and an amplifier section, the phase control section having a passive waveguide that controls a phase variation of feedback laser light, the amplification section having an active structure that controls the strength of the feedback laser light. Currents are separately provided to the three sections to generate optical pulses with tuning range of tens of GHz. Applications include the clock recovery in the 3R regeneration of the optical communication.

Abstract: For producing semiconductor chips by thin-film technology, an active layer (2) that has been grown on a substrate, with contact layers on the back side that have a base layer (3), is reinforced by a reinforcement layer (4). Next, an auxiliary carrier layer (5) is applied, which makes the further processing of the active layer (2) possible. The reinforcement layer (4) and the auxiliary carrier layer (5) replace the mechanical carriers used in conventional methods.

Abstract: To provide surface-emitting type semiconductor lasers and methods of manufacturing the same in which the polarization direction of laser light can be readily controlled, a surface-emitting type semiconductor laser includes a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate. The vertical resonator has a plurality of unit resonators. An emission region of each of the unit resonators has a diameter that oscillates in a single-mode.

Abstract: In one embodiment, a dark channel array is provided which includes gain channels, each gain channel being configured to emit an output beam, and which includes a dark channel configured to cause output beams from the gain channels to be coherently couple in phase with each other.

Abstract: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with one another.

Abstract: An apparatus and method for making a grayscale photo mask and a three-dimensional grayscale diffractive optical element operate as follows. A grayscale photo mask is obtained by exposing a laser direct write (LDW) glass material to laser beam radiation from a first laser beam of modulated power moved over a grid of discrete locations on the LDW material, the modulated power being in accordance with grayscale pattern data, and, while the first laser beam is moved over the discrete locations of the grid, exposing the grid to a second laser beam, the power of the second laser beam being less than the bleach threshold of the glass material, to provide each of the discrete locations with a gray scale level to provide a predetermined gray scale pattern of varying optical transmissivity on the LDW material to produce a grayscale mask.

Abstract: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with one another.

Abstract: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with one another.

Abstract: A mode-locked laser serves as a light source for stabilizing the frequency of each optical carrier and generates high-quality optical multi-carrier. The mode-locked laser is equipped with a master laser for generating master laser light; a mode-locked laser section including in an optical resonator at least a modulating section, am amplifying section, and a bandwidth limiting section for reducing mode partition noise; and a signal generating section for generating a periodic signal that serves for mode locking of the mode-locked laser section and is to be applied to the modulating section. The master laser light is input to the optical resonator of the mode-locked laser section to cause injection locking. An optical multi-carrier source is constructed by combining this mode-locked laser with a waveguided optical nonlinear medium.

Abstract: A semiconductor laser diode comprises: an n-type GaAs substrate; and a first laser diode structure having a first n-type cladding layer, a first active layer including a quantum well layer, a first p-type cladding layer on the first active layer, a p-type signal layer on the first p-type cladding layer and which has the same constituent elements as those of the first p-type cladding layer, and a p-type ridge waveguide in a stripe mesa-like shape on the signal layer, which has the same constituent elements as those of the signal layer, and in which composition ratios of two constituent elements in a complementary relation of constituent elements are different from those composition ratios of the signal layer.

Abstract: Devices and techniques for achieving continuous tuning of coupled opto-electronic oscillators with signal filtering in RF or microwave frequencies by optical filtering via two optical resonators in two separate optical paths.

Abstract: Two thin-clad laser diodes are disposed to form a stack-type diode laser device. The diodes emit two beams that are substantially parallel and in proximity such that they share many fiberoptic systems designed for a single beam. The diodes are coupled by leaky waves through top surfaces. The leaky waves are generated by a thin metal contact layer or diffractive gratings. The stack-type device is employed for single-mode power enhancement and tunable lasers.

Abstract: An apparatus and method for high speed phase modulation of optical beam with reduced optical loss. In one embodiment, an apparatus includes a first region of an optical waveguide disposed in semiconductor material. The first region has a first conductivity type. The apparatus also includes a second region of the optical waveguide disposed in the semiconductor material. The second region has a second conductivity type opposite to the first conductivity type. A first contact is included in the apparatus and is coupled to the optical waveguide at a first location in the first region outside an optical path of an optical beam to be directed through the optical waveguide. The apparatus also includes a first higher doped region included in the first region and coupled to the first contact at the first location to improve an electrical coupling between the first contact and the optical waveguide. The first higher doped region has a higher doping concentration than a doping concentration within the optical path.

Abstract: A semiconductor laser is formed on a semiconductor substrate with an array of laterally spaced laser device elements each including a second order distributed feedback grating bounded by distributed Bragg reflector gratings. The device elements in which the distributed feedback grating and the distributed Bragg reflector gratings are formed have a lower effective index than the index of the interelement regions and are spaced so as to form an antiguided array.