Abstract: A mobile device includes an image sensor separated from a processing component by an open space. The image sensor includes one or more light source modules and the processing component includes one or more light sensors aligned with the one or more light source modules. Image data from the image sensor may be transmitted to the processing component via light signals exchanged between the one or more light source modules and the one or more light sensors. In some embodiments, light signals transmitted between one or more light source modules of an image sensor and one or more light sensors of the processing component are used to determine positional and angular data about the image sensor.

Abstract: An optical apparatus is provided for an optical transceiver. The optical apparatus includes an interposer, a glass lens chip bonded to the interposer, and a plurality of bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) flip chipped to the interposer. Each of the bottom-emitting VCSELs is fabricated on a respective substrate, at least one bottom-emitting VCSEL is capable of emitting an optical signal having a wavelength of about 850 nm, and at least a portion of the respective substrate on which the at least one bottom-emitting VCSEL is fabricated is removed to permit the at least one bottom-emitting VCSEL to emit the optical signal having the wavelength of about 850 nm to the glass lens chip.

Abstract: A method of manufacturing a light emitting device includes: providing a light emitting device in which a first and second semiconductor laser elements are connected in series; performing a first measurement that includes supplying current to the first semiconductor laser element to measure at least one property of the first semiconductor laser element, and supplying current to the second semiconductor laser element to measure at least one property of the second semiconductor laser element; supplying current to the first and second semiconductor laser elements for a length of time; performing a second measurement that includes supplying current to the first semiconductor laser element to measure the at least one property of the first semiconductor laser element, and supplying current to the second semiconductor laser element to measure the at least one property of the second semiconductor laser element, and evaluating the first and second semiconductor laser elements.

Abstract: Techniques of minimizing or eliminating stresses in silicon photonic integrated circuits (Si-PICs) and in semiconductor packages having one or more Si-PICs (Si-PIC packages) are described. An Si-PIC or an Si-PIC package includes a stress minimization solution that assists with filtering out stresses by selectively isolating photonic and/or electronic devices, by isolating components or devices in an Si-PIC or an Si-PIC package that are sources of stress, or by isolating an Si-PIC in an Si-PIC package. The stress minimization solution may include strategically placed cavities and a stage that assist with minimizing or preventing transfer of stress to one or more photonic and/or electronic devices in an Si-PIC or an Si-PIC package.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: A spectral imager, including: a photodetector including a plurality of photosensitive sites exposed on a photosensitive surface; a collimating lens including an intermediate focal plane; an array of interferometers including two main waves, each including a cavity defined by two faces; an array of microlenses arranged in a plane parallel to the photosensitive surface, each microlens paired with an interferometer to form an optical pair, including an image focal plane coinciding with the photosensitive surface and facing a section of the photosensitive surface.

Abstract: This disclosure describes an optoelectronic to provide ultra-precise and stable packaging for an optoelectronic device such as a light emitter or light detector. The module includes spacers to establish precise separation distances between various parts of the module. One of the spacers serves as a support or mount for an optical element that comprises a mask.

Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a doped substrate layer. The VCSEL array may comprise a plurality of VCSELs on the doped substrate layer. The VCSEL array may comprise a buffer structure between the doped substrate layer and the plurality of VCSELs. The buffer structure, or a combination of the buffer structure and a layer of the plurality of VCSELs, may provide electrical isolation from the plurality of VCSELs to the doped substrate layer. The VCSEL array may comprise an isolation structure between adjacent VCSELs of the plurality of VCSELs. The isolation structure may provide electrical isolation between a first VCSEL, of the adjacent VCSELs, and a second VCSEL of the adjacent VCSELs. The first VCSEL and the second VCSEL may be different VCSELs.

Abstract: A proximity sensing module with dual transmitters includes a circuit board, a package housing, a transmitter unit and a sensing assembly. The transmitter unit includes a first transmitter and a second transmitter. The first transmitter and the second transmitter are disposed on the circuit board. The sensing assembly includes a sensor disposed on the circuit board. The transmitter unit is shielded from the sensing assembly through the package housing. One of the first transmitter and the second transmitter is nearer to the sensing assembly than the other one is.

Abstract: A highly efficient laser ignition device is provided. The highly efficient laser ignition device fundamentally includes: a pumping light source adopting a multi-chip single emitter-packaged optical fiber output laser diode; a laser medium to which ytterbium is added; and a saturated absorber as a passive Q-switch medium, wherein a pulse of 100-999 ps as the passive Q-switch laser output can be obtained. According to the disclosed, the problems of high cost/low efficiency/low reliance/non-uniformity, which are disadvantages for replacing an ignition device using an electric spark with a laser ignition device, can be solved.

Abstract: A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

Abstract: Disclosed herein are light emitting diodes (LEDs) having a high efficiency. A light emitting diode including an active light emitting layer within a semiconductor layer is provided. The semiconductor layer has a mesa shape. The light emitting diode also includes a substrate having a first surface on which the semiconductor layer is positioned and an outcoupling surface opposite to the first surface. Light generated by the active light emitting layer is incident on the outcoupling surface and propagates toward an optical element downstream of the outcoupling surface. The light emitting diode also includes a first anti-reflection coating adjacent to the outcoupling surface; an index-matched material between the outcoupling surface and the optical element, wherein an index of refraction of the index-matched material is greater than or equal to an index of refraction of the optical element; and/or secondary optics adjacent to the outcoupling surface.

Abstract: A semiconductor laser device of an embodiment comprises: a first electrode having an opening for passage of laser light and arranged on a main surface of a substrate; and a second electrode arranged on a back surface of the substrate. A stacked structural body including an active layer and a photonic crystal layer is arranged between the substrate and the first electrode, and a current confinement layer having an opening for passage of a current is arranged between the stacked structural body and the first electrode. A maximum width of the opening of the current confinement layer is smaller than a maximum width of the opening of the first electrode, and a whole region defined by the opening of the current confinement layer fits within a region defined by the opening of the first electrode as viewed from the first electrode side toward the second electrode side.

Abstract: Photonic devices such as semiconductor lasers and photodetectors of various operating wavelengths are grown monolithically on a Silicon substrate, and formed of nanowire structures with quantum structures as active regions. A reduction of strain during fabrication results from the use of these nanowire structures, thereby allowing devices to operate for extended periods of time at elevated temperatures. Monolithic photonic devices and monolithic photonic integrated circuits formed on Silicon substrates are thus provided.

Abstract: An example device in accordance with an aspect of the present disclosure includes a slab to transmit light, and a plurality of lenses and filters disposed on first and second surfaces of the slab. The lenses include an anti-reflective coating on at least one of the plurality of lenses at an end of the slab to couple light through the anti-reflective coating, and a reflective coating disposed on remaining ones of the plurality of lenses to cause the lenses to reflect light. The filters are offset from the lenses to form an optical zig-zag.

Abstract: Optical systems and methods for collecting distance information are disclosed. An example optical system includes a bulk receiving optic, a plurality of illumination sources, a pixel array comprising at least a first column of pixels and a second column of pixels, each pixel in the first column of pixels being offset from an adjacent pixel in the first column of pixels by a first pixel pitch, the second column of pixels being horizontally offset from the first column of pixels by the first pixel pitch, the second column of pixels being vertically offset from the first column of pixels by a first vertical pitch; and a set of input channels interposed between the bulk receiving optic and the pixel array.

Abstract: An organic light emitting diode (OLED) having an organic electroluminescent layer formed between a first electrode and a second electrode. One of the first and second electrodes is a transparent electrode having a surface through which light is emitted from the OLED to the outside. The transparent electrode has a plasmonic photonic crystal structure fabricated having an artificial lattice with a pitch in density variation intermediate in size between a metallic crystal and a photonic crystal formed in the same material as the transparent electrode, thereby operable to suppress propagation of the surface plasmon polaritons at the surface.

Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a doped substrate layer. The VCSEL array may comprise a plurality of VCSELs on the doped substrate layer. The VCSEL array may comprise a buffer structure between the doped substrate layer and the plurality of VCSELs. The buffer structure, or a combination of the buffer structure and a layer of the plurality of VCSELs, may provide electrical isolation from the plurality of VCSELs to the doped substrate layer. The VCSEL array may comprise an isolation structure between adjacent VCSELs of the plurality of VCSELs. The isolation structure may provide electrical isolation between a first VCSEL, of the adjacent VCSELs, and a second VCSEL of the adjacent VCSELs. The first VCSEL and the second VCSEL may be different VCSELs.

Abstract: A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiyGe(1?y), where 0.8<y<1, and SizGe(1?z), where 0.2<z<0.4) that are substantially transparent to a wavelength of interest. The structure further includes a strained layer of a Group III-V material over the first DBR and a second DBR over the strained layer. The second DBR contains alternating layers of electrically conductive oxides (e.g., ITO/AZO) that are substantially transparent to the wavelength of interest. Embodiments of VCSELs and photodetectors can be derived from the structure. The strained layer of Group III-V material can be, for example, a thin layer of In0.53Ga0.47As having a thickness in a range of about 2 nm to about 5 nm.

Abstract: The present application relates to vertically integrated assemblies including a MEMS-based optomechanical architecture. In some embodiments, the assembly includes a MEMS/optoelectronic module, an emitter module, and a detector module, where these modules are vertically integrated. Methods of fabricating such assemblies are also described herein.

Abstract: A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, axially separated from one another substantially non-equidistantly. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking.

Abstract: A quantum cascade laser is configured with a semiconductor substrate, and an active layer provided on a first surface of the substrate and having a multistage lamination of unit laminate structures each of which includes an emission layer and an injection layer. The active layer is configured to be capable of generating first pump light of a frequency ?1 and second pump light of a frequency ?2, and to generate output light of a difference frequency ? by difference frequency generation. An external diffraction grating is provided constituting an external cavity for generating the first pump light and configured to be capable of changing the frequency ?1, outside an element structure portion including the active layer. Grooves respectively formed in a direction intersecting with a resonating direction are provided on a second surface of the substrate.

Abstract: Certain examples described herein relate to a surface-emitting semiconductor-laser which includes an oxide window, a light emitting cavity, and at least one phase matching window. The oxide window, the light emitting cavity, and the at least one phase matching layer are arranged so that a predetermined phase relationship is satisfied. The phase relationship facilitates high performance and stable multimode operations of the surface-emitting semiconductor laser designed to emit between 850-1060 nm wavelength for applications such as long distance optical communications in high performance computing and data servers.

Abstract: A photoelectric conversion connector comprising a support, a photoelectric conversion element that is provided on said support and that can be connected to an optical fiber through an optical signal, a first resin member that is formed at the upper part of the photoelectric conversion element, and a second resin member that is formed at the upper part of the first resin member. An optical signal transmitted between the photoelectric conversion element and the optical fiber goes through both the first resin member and the second resin member.

Abstract: The disclosure is directed at a method and apparatus for producing a detector element. The detector element includes first and second electrodes located on opposites sides of a semiconductor layer. The first and second electrodes are staggered with respect to each other in a plane perpendicular to the semiconductor layer.

Abstract: An optoelectronic device comprises microwires or nanowires, each of which comprises an alternation of passivated portions and of active portions, the active portions being surrounded with an active layer, where the active layers do not extend on the passivated portions.

Abstract: An imaging system color image acquisition including: an image sensor; a tunable spectral filter arranged in an optical path of light propagation towards the image sensor; and a controller connected to the image sensor and to the tunable spectral filter. The controller is configured and operable for generating a colored image by sequentially operating the tunable spectral filter for sequentially filtering light passing towards the image sensor with three or more different spectral filtering curves during three or more corresponding integration time durations. The tunable spectral filter is configured, as an etalon and includes a pair of reflective surfaces. At least one of the reflective surfaces includes a layer of high refractive index of at least n=2.3 or even higher than 3, or a layer of low refractive index, smaller than n=1.

Abstract: The present invention relates to a laser device being formed of at least one VCSEL (15) with intracavity contacts. The VCSEL comprises a layer structure (18) with an active region (6) between a first DBR (4) and a second DBR (10), a first current-injection layer (5) of a first conductivity type between the first DBR (4) and the active region (6), and a second current-injection layer (8) of a second conductivity type between the second DBR (10) and the active region (6). The first and second current-injection layers (5, 8) are in contact with a first and a second metallic contact (11, 12), respectively. The first and/or second DBR (4, 10) are formed of alternating Aluminum oxide and Al(x)Ga(1?x)As containing layers. The proposed design of this VCSEL allows an increased efficiency and lower production costs of such a laser since the top and bottom DBRs may be formed of a considerable reduced thickness.

Abstract: Embodiments of the present invention generally relate to a method for forming a HAMR device having a photonic integrated circuit that includes an optical detector, an optical emitter, and an optical element distinct from the optical detector and the optical emitter, where the elements of the photonic integrated circuit are aligned with a near field transducer. The method includes forming one or more layers on a substrate, bonding the layers to a partially fabricated recording head, removing the substrate using epitaxial lift-off, and forming the optical elements on the partially fabricated recording head.

Abstract: An optical communication module includes a plurality of semiconductor lasers that emit optical signals with different wavelengths, a multiplexing optical system including a plurality of optical filters used for multiplexing the optical signals, each of which has been emitted from a corresponding one of the plurality of semiconductor lasers, and a substrate on which the optical filters are provided, and a plurality of lenses, each of the lenses being joined to a corresponding one of the plurality of optical filters to condense or collimate an optical signal emitted from a corresponding one of the semiconductor lasers and thereby enable the light signal to enter the optical filter. The plurality of lenses are independent from one another and have a different linear expansion ratio from that of the substrate. Furthermore, the plurality of lenses are not in contact with a second mount on which the substrate is mounted.

Abstract: An exemplary embodiment of the present disclosure illustrates a gesture sensing module disposed on a substrate. The gesture sensing module includes at least one light emitting unit, at least one light sensor, and a control circuit. The light emitting unit provides a light to illuminate a sensing area, wherein a central optical axis of the light forms an angle with a normal vector of the substrate, and the angle is not equal to 0. The light sensor senses a reflection light which a target in the sensing area reflects the light, and generate a sensing signal according to the reflection light. The control circuit coupled to the light sensor and the light emitting unit determines a traveling direction of the target according to the sensing signal.

Abstract: An image sensor including: a plurality of pixels, wherein a first pixel of the pixels includes: a first photoelectric conversion element; and a first microlens overlapping the first photoelectric conversion element, wherein the first microlens reflects wavelengths of a first region of visible light and allows wavelengths of second and third regions of visible light to pass through to the first photoelectric conversion element.

Abstract: A transistor device is provided that includes a gate electrode disposed between source and drain electrodes and overlying a quantum dot structure realized by a modulation doped quantum well structure. A potential barrier surrounds the quantum dot structure. The transistor device can be configured for operation as a single electron transistor by means for biasing the gate and source electrodes to allow for tunneling of a single electron from the source electrode through the potential barrier surrounding the quantum dot structure and into the quantum dot structure, and means for biasing the gate and drain electrodes to allow for selective tunneling of a single electron from the quantum dot structure through the potential barrier surrounding the quantum dot structure to the drain electrode, wherein the selective tunneling of the single electron is based upon spin state of the single electron.

Abstract: Heat management systems for vertical cavity surface emitting laser (VCSEL) chips are provided. Embodiments of the invention provide substrates having a vertical cavity surface emitting laser chip disposed on the substrate surface and electrically interconnected with the substrate, a thermal frame disposed on the substrate surface and proximate to at least three sides of the vertical cavity surface emitting laser chip, and a thermal interface material disposed between the at least three sides of the vertical cavity surface emitting laser chip and the thermal frame. The substrate can also include a transceiver chip that is operably coupled to a further integrated circuit chip and that is capable of driving the VCSEL chip.

Abstract: The present invention provides a surface emitting laser that provides a sufficient optical output and is suitable as a light source intended for electrophotographic apparatuses, and a surface-emitting-laser array and an image forming apparatus each including the surface emitting laser. The surface emitting laser includes a first stepped structure on a front surface of a front mirror. In the first stepped structure, a difference L between an optical path length in a first area and an optical path length in a second area satisfies the following expression: (¼+N)?<|L|<(¾+N)? where N is an integer.

Abstract: A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture.

Abstract: Lighting apparatus and method for detecting reflected light from local objects are disclosed. A controller within a lighting apparatus is used to activate and deactivate one or more LEDs within a duty cycle. The controller uses a light detection apparatus that is optically isolated from the LEDs to sample light levels during a time in which the LEDs are deactivated and during a time in which the LEDs are activated. The light level when the LEDs are deactivated is an indication of the ambient light levels within the surrounding area of the lighting apparatus. The light level when the LEDs are activated is an indication of the ambient light levels combined with any light generated by the LEDs that is reflected onto the light detection apparatus. By comparing these light levels, the controller can determine the level of light attributable to reflected light from the LEDs.

Abstract: A surface-emitting laser device includes a transparent dielectric layer provided in an emitting region and configured to cause a reflectance at a peripheral part to be different from a reflectance at a central part in the emitting region. In the surface-emitting laser device, the thickness of a contact layer is different between a region having a relatively high reflectance and a region having a relatively low reflectance in the emitting region. The contact layer is provided on the high refractive index layer of an upper multilayer film reflecting mirror, and the total optical thickness of the high refractive index layer and the contact layer in the region having the relatively low reflectance is deviated from an odd number multiple of a one quarter oscillation wavelength of laser light emitted from the emitting region.

Abstract: A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of Al?Ga1-?As (0<?<1) or (Al?Ga1-?)?In1-?P (0<=?<1, 0<?<1) with modified refractive index areas (air holes) 151 periodically arranged therein and an epitaxial growth layer 16 created on the two-dimensional photonic crystal layer 15 by an epitaxial method. Since Al?Ga1-?As and (Al?Ga1-?)?In1-?P are solid even at high temperatures, the air holes 151 will not be deformed in the process of creating the epitaxial growth layer 16, so that the performance of the two-dimensional photonic crystal layer 15 as a resonator can be maintained at high levels.

Abstract: A superluminescent diode which amplifies light through stimulated amplification and outputs emitted beams from one of edges at two ends includes a cladding layer of a first conductivity type formed on a semiconductor substrate, an active layer formed on the cladding layer of the first conductivity type, a cladding layer of a second conductivity type formed on the active layer, and a multilayer film formed at the other edge opposite to the one edge that emits the beams, reflectance of which has wavelength dependence, and a spectral shape of the emitted beams output from the one edge is controllable by the multilayer film.

Abstract: The invention relates to a method and an arrangement for reducing power consumption of a receiver in a mobile communication network comprising a sender transmitting packet data on a downlink channel to one or more receivers over a radio interface. Inactive time instants and listening time instants are defined according to provided rules. The receiver is arranged to listen for information from the sender during the listening time instants and to sleep during the inactive time instants. Thus, less power will be consumed during the inactive time instants.

Abstract: A method for manufacturing a waveguide-type semiconductor device includes the steps of forming an epitaxial structure including a waveguide mesa and a device mesa; forming a mask for selective growth on the epitaxial structure; growing a semiconductor region on an end surface of the device mesa by using the mask for selective growth, the semiconductor region including a side portion having a layer shape and a protruding wall portion; forming an ohmic electrode on a top surface of the device mesa; forming a resin layer on the device mesa and the semiconductor region; forming a resin mask having an opening on the ohmic electrode; forming an electric conductor connecting the ohmic electrode to an electrode pad, the electric conductor passing over the protruding wall portion while making contact with a surface of the resin mask; and removing the resin mask after forming the electric conductor.

Abstract: An integrated optical receiver architecture may be used to couple light between a multi-mode fiber (MMF) and silicon chip which includes integration of a silicon de-multiplexer and a high-speed Ge photo-detector. The proposed architecture may be used for both parallel and wavelength division multiplexing (WDM) based optical links with a data rate of 25 Gb/s and beyond.

Abstract: A hybrid vertical cavity laser includes an optical circuit substrate including a grating having refractive index units having a lower refractive index and a higher refractive index with respect to each other that are alternately arranged in a first direction, and a waveguide guiding light in the first direction, a mesa structure on the optical circuit substrate, the mesa structure including a first-type semiconductor layer including an exposed portion, an active layer, a second-type semiconductor layer, and an upper reflective layer sequentially stacked in a second direction perpendicular to the first direction, a first electrode on the exposed portion, and a second electrode on the upper reflective layer. An overlapped length between the waveguide and a mesa aperture forming an opening through which light produced from the active layer enters the grating is D, a pitch of the grating is p, and 0<D<p.

Abstract: A surface emitting laser includes a stepped structure including portions having different thicknesses. The optical path length from a plane defined above the stepped structure and extending parallel to a base substrate to an interface between a front mirror and the stepped structure is set to a specific value in each of the portions of the stepped structure.

Abstract: There is provided a surface emitting laser allowing a direction of a far-field pattern (FFP) centroid to be inclined from a normal direction of a substrate providing the surface emitting laser, comprising: a substrate; a lower reflecting mirror, an active layer, an upper reflecting mirror stacked on the substrate; and a surface relief structure located in an upper portion of a light emitting surface of the upper reflecting mirror, the surface relief structure being made of a material allowing at least some beams emitted from the surface emitting laser to be transmitted therethrough, a plurality of regions having a predetermined optical thickness in a normal direction of the substrate being formed in contact with other region in an in-plane direction of the substrate, and a distribution of the optical thickness in the in-plane direction of the substrate is asymmetric to a central axis of the light emitting regions.

Abstract: Implementing a layered hyperbolic metamaterial in a vertical cavity surface emitting laser (VCSEL) to improve thermal conductivity and thermal dissipation thereby stabilizing optical performance. Improvement in the thermal management and power is expected by replacing the distributed Bragg reflector (DBR) mirrors in the VCSEL. The layered metamaterial structure performs the dual function of the DBR and the heat spreader at the same time.

Abstract: A multicolor photonic crystal laser array comprises pixels of monolithically grown gain sections each with a different emission center wavelength. As an example, two-dimensional surface-emitting photonic crystal lasers comprising broad gain-bandwidth III-nitride multiple quantum well axial heterostructures were fabricated using a novel top-down nanowire fabrication method. Single-mode lasing was obtained in the blue-violet spectral region with 60 nm of tuning (or 16% of the nominal center wavelength) that was determined purely by the photonic crystal geometry. This approach can be extended to cover the entire visible spectrum.

Abstract: The present invention is directed to display technologies. More specifically, various embodiments of the present invention provide projection display systems where one or more laser diodes are used as light source for illustrating images. In one set of embodiments, the present invention provides projector systems that utilize blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides projection systems having digital lighting processing engines illuminated by blue and/or green laser devices. In one embodiment, the present invention provides a 3D display system. There are other embodiments as well.

Abstract: Apparatuses and methods for high density laser optics are provided. An example, of a laser optics apparatus includes a plurality of vertical cavity surface emitting lasers (VCSELs) in a monolithically integrated array, a high contrast grating (HCG) integrated with an aperture of a vertical cavity of each of the plurality of the VCSELs to enable emission of a single lasing wavelength of a plurality of lasing wavelengths, and a plurality of single mode waveguides, each integrated with a grating coupler, that are connected to each of the plurality of the integrated VCSELs and the HCGs, where each of the grating couplers is aligned to an integrated VCSEL and HCG.