Abstract: A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of AlxGa1-xAs (0<x?1) and a layer of large refractive index of AlyGa1-yAs (0?y<x?1), the lower reflector is formed of a first lower reflector having a low-refractive index layer of AlAs an

Abstract: A vertical surface emitting laser having a mesa structure formed with sloping side walls. A passivation layer including at least two sublayers at least partially covers the mesa structure. The at least two sublayers have differing stress components arranged to at least partially counter each other. By making the mesa structure with sloping side walls, the deposition of the passivation layer in such a way as to minimize the net stress of the passivation layer is facilitated. In addition, the mesa structure has a first stack of mirror layers comprising a semiconductor material doped with a first dopant and having first peripheral oxidized portions extending a first distance into said first stack, and a second stack of mirror layers comprising a semiconductor material doped with a second dopant and having second peripheral oxidized portions extending a second distance into said second stack, wherein the first distance is different from the second distance.

Abstract: A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating comprises segments of high and low refractive index materials with an index differential between the high and low index materials. By way of example, a SWG reflective structure is disposed over a low index cavity region and above another reflective layer (either SWG or DBR). In one embodiment, the SWG structure is movable, such as according to MEMS techniques, in relation to the opposing reflector to provide wavelength selective tuning. The SWG-VCSEL design is scalable to form the optical cavities for a range of SWG-VCSELs at different wavelengths, and wavelength ranges.

Abstract: A VCSEL structure is provided. The VCSEL structure comprises a substrate. The structure may also include one or more conducting layers positioned on the substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.

Abstract: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. One or more first OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the first OE elements positioned in optical alignment with the optical via for receiving the light. A second OE element embedded within the wiring layer. A carrier may be interposed between electrical interconnect elements and positioned between the wiring layer and a circuit board.

Abstract: A semiconductor laser is embodied as a surface emitting thin-film semiconductor laser (2) with a semiconductor body (4). The semiconductor body (4) comprises a first and a second planar surface (12, 14). The semiconductor body (4) comprises between the planar surfaces at least one active layer (10) for generating radiation. The semiconductor body (4) has, for coupling out the radiation from the active layer (10) toward the first planar surface (12), at least one first mirror area (26) inclined with respect to the active layer (10).

Abstract: An array of vertical-cavity surface emitting lasers (VCSELs) may be fabricated with very high fill-factors, thereby enabling very high output power densities during pulse, quasi-continuous wave (QCW), and continuous wave (CW) operation. This high fill-factor is achieved using asymmetrical pillars in a rectangular packing scheme as opposed prior art pillar shapes and packing schemes. The use of asymmetrical pillars maintains high efficiency operation of VCSELs by maintaining minimal current injection distance from the metal contacts to the laser active region and by maintaining efficient waste heat extraction from the VCSEL. This packing scheme for very high fill-factor VCSEL arrays is directly applicable for next generation high-power, substrate removed, VCSEL arrays.

Abstract: A polymer film laser is provided that comprises a plurality of extruded polymer layers. The plurality of extruded polymer layers comprises a plurality of alternating dielectric layers of a first polymer material having a first refractive index and a second polymer material having second refractive index different than the first refractive index.

Abstract: A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction.

Abstract: A flexible microcavity structure made of organic materials using spin-coating technique for allowing large area structures using a roll-to-roll process. The structure includes at least one first polymer layer, at least one second polymer layer, and a cavity layer. The cavity layer has quantum dots embedded therein for realizing an electrically pumped microcavity emitter. The at least one first polymer layer alternates with the at least one second polymer layer, respectively, to form a pair of distributed Bragg reflecting mirrors. The cavity layer is sandwiched between the pair of distributed Bragg reflecting mirrors.

Abstract: Provided is a two-dimensional photonic crystal surface emitting laser which can suppress light leaking outside in an in-plane direction of the two-dimensional photonic crystal and an absorption loss in an active layer caused by the latter layer serving as an absorbing layer without contributing to light emission, and can improve light use efficiency. The surface emitting laser has a laminated structure in which an active layer and a photonic crystal layer are laminated in a vertical direction, has a resonance mode in an in-plane direction of the photonic crystal, and light is extracted in a vertical direction to a surface of the photonic crystal, wherein the laminated structure has a multi-refractive index layer including a central region made of a high refractive index medium and a peripheral portion made of a low refractive index medium with a lower refractive index than that of the high refractive index medium.

Abstract: An optoelectronic device is provided. A light source emitter and a light source receiver are integrated in the device. The light source emitter is a Zn-diffused vertical cavity surface-emitting laser (VCSEL). The light source receiver is a uni-traveling-carrier photodiode (UTC-PD). With the VCSEL, a 10 Gb/s eye is opened under a small voltage and a small signal amplitude. With the UTC-PD, the 10 Gb/s eye is passed even under zero-bias. Thus, the optoelectronic device has a high speed and power consumption is saved.

Abstract: A known flip-chip assembly manufacturing process is augmented by process steps of the invention to create a VCSEL flip-chip assembly comprising a plurality of semiconductor devices having respective arrays of a small number of VCSELs thereon, which are mounted on a substrate to form a large array of VCSELs that are precisely optically aligned with their respective optical coupling elements.

Abstract: Vertical Cavity Surface Emitting Laser (VCSEL) arrays with vias for electrical connection are disclosed. A Vertical Cavity Surface Emitting Laser (VCSEL) array in accordance with one or more embodiments of the present invention comprises a plurality of first mirrors, a plurality of second mirrors, a plurality of active regions, coupled between the plurality of first mirrors and the plurality of second mirrors, and a heatsink, thermally and mechanically coupled to the second mirror opposite the plurality of active regions, wherein an electrical path to at least one of the plurality of second mirrors is made through a via formed through a depth of the plurality of second mirrors, and a plurality of VCSELs in the VCSEL array are connected in series.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element emitting light in a region ranging from ultraviolet to visible, and a visible-light luminescent element absorbing light emitted from the semiconductor light-emitting element and outputting visible light. The visible-light luminescent element includes a substrate, a light-reflecting layer formed on the substrate and containing light scattering particles, and a luminescent layer containing phosphor particles. The luminescent layer absorbs light emitted from the semiconductor light-emitting element and output visible light. The luminescent layer further absorbs light that is emitted from the semiconductor light-emitting element, arrives at and is reflected from the light scattering particles, and output the visible light.

Abstract: A dual wavelength laser device including a cap, a header, a first laser chip and a second laser chip. The cap includes a cap body and a lens embedded on the cap body. The header forms an accommodating space with the cap. The first laser chip is arranged in the accommodating space and emitting a first laser beam toward the lens. The second laser chip is arranged in the accommodating space and emitting a second laser beam toward the lens.

Abstract: Surface emitting laser arrays with intra-cavity harmonic generation are coupled to an optical system that extracts harmonic light in both directions from an intra-cavity nonlinear optical material in such a way that the focusing properties of the light beams are matched.

Abstract: A surface emitting laser includes first mirror, a second mirror, and an active layer formed between the first mirror and the second mirror. A third mirror is formed between the first mirror and the active layer. A first cavity is constituted by the first mirror and the second mirror, and a second cavity is constituted by the first mirror and the third mirror.

Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.

Abstract: An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an dielectric material formed intermediate the electrode and a light emitting semiconductor material. Electrical continuity between the semiconductor material and the metal electrode is provided by an optically transmissive ohmic contact layer, such as a layer of Indium Tin Oxide. The metal electrode thus can be physically separated from the semiconductor material by one or more of the dielectric material and the ohmic contact layer. The dielectric layer can increase total internal reflection of light at the interface between the semiconductor and the dielectric layer, which can reduce absorption of light by the electrode. Such LED can have enhanced utility and can be suitable for uses such as general illumination.

Abstract: Aspects concerning a method of making electrical contact to a region of semiconductor in which one or more LEDs are formed include that a dielectric region can be formed on a p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.

Abstract: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. One or more first OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the first OE elements positioned in optical alignment with the optical via for receiving the light. A second OE element embedded within the wiring layer. A carrier may be interposed between electrical interconnect elements and positioned between the wiring layer and a circuit board.

Abstract: An extended cavity surface emitting laser has a first laser die with a first cavity and a first gain element and a second laser die with a second cavity and a second gain element. The first and second gain elements are in series to provide optical gain and optical feedback in an extended optical cavity configuration. The first and second gain elements provide optical gain and optical feedback in a common extended cavity with the first and second gain elements operating serially as a common extended cavity optical mode.

Abstract: A laser diode allowed to stabilize the polarization direction of laser light in one direction is provided. The laser diode includes a laminate configuration including a lower multilayer reflecting mirror, an active layer and an upper multilayer reflecting mirror in order from a substrate side, in which the laminate configuration includes a columnar mesa section including an upper part of the lower multilayer reflecting mirror, the active layer and the upper multilayer reflecting mirror, and the lower multilayer reflecting mirror includes a plurality of pairs of a low refractive index layer and a high refractive index layer, and a plurality of oxidation layers nonuniformly distributed in a direction rotating around a central axis of the mesa section in a region except for a central region of one or more of the low refractive index layers.

Abstract: A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction.

Abstract: A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.

Abstract: The invention provides an optoelectronic device combining a vertical cavity surface emitting laser (VCSEL) and a photodetector for monitoring the output power of the vertical cavity surface emitting laser. To improve the signal-to-noise ratio of the photodetector, a light deflector is interposed between the photodetector and the VCSEL.

Abstract: A surface emitting laser device includes a substrate and plural semiconductor layers laminated on the substrate, the plural semiconductor layers including a first semiconductor multi-layer film including aluminum (Al), an active layer, and a second semiconductor multi-layer film, a light emitting section having a mesa structure being formed on the first semiconductor multi-layer film. When viewed in a direction orthogonal to a surface of the substrate, an outer shape of the first semiconductor multi-layer film is a macroscopically smooth shape without an angular corner, and a side surface of the first semiconductor multi-layer film is coated with a passivation film and a protection film.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

Abstract: A surface emitting laser includes a plurality of semiconductor layers including an active layer over a substrate, and emits laser light in a direction perpendicular to the surface of the substrate. The semiconductor layers including the active layer define a resonator that emits laser light having a first wavelength. A wavelength-converting layer is disposed between the substrate and the resonator. The wavelength-converting layer converts the light having the first wavelength into light having a second wavelength that can pass through the substrate.

Abstract: A surface emitting laser configured by laminating on a substrate a lower reflection mirror, an active layer and an upper reflection mirror includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a convex high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of ?, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, and an absorption layer causing band-to-band absorption is provided in the laminated structure.

Abstract: The present invention provides an improved mesa vertical-cavity surface-emitting laser (VCSEL), in which a first distributed Bragg reflector (DBR) mesa of semiconductor material is disposed on a top surface of an active layer. A contact annulus is disposed on a contact region of a top surface of the first DBR mesa, such that an inner circumference of the contact annulus defines a window region of the top surface of the first DBR mesa. A second DBR mesa of dielectric material is disposed on the window region. Whereas the first DBR mesa has a first reflectance at a lasing wavelength that is insufficient to sustain lasing in the active layer, the first DBR mesa and the second DBR mesa together have a total reflectance at the lasing wavelength that is sufficient to sustain lasing in the active layer under the window region.

Abstract: A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating comprises segments of high and low refractive index materials with an index differential between the high and low index materials. By way of example, a SWG reflective structure is disposed over a low index cavity region and above another reflective layer (either SWG or DBR). In one embodiment, the SWG structure is movable, such as according to MEMS techniques, in relation to the opposing reflector to provide wavelength selective tuning. The SWG-VCSEL design is scalable to form the optical cavities for a range of SWG-VCSELs at different wavelengths, and wavelength ranges.

Abstract: A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector that is a first conductive type and formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector that is a second conductive type and formed on the active region; a current narrowing layer that is located between the first and second semiconductor multilayer reflectors, and in that a conductive region which has anisotropy in a long side direction and a short side direction within the surface which is parallel to a principal surface of the substrate is formed; and a convex lens member that is formed in a beam window which emits a light on the second multilayer reflector, and that has anisotropy in a long side direction and a short side direction within a surface which is parallel to the principal surface of the substrate.

Abstract: Included are a plurality of surface-emitting laser elements each of which includes a substrate; a lower multilayer reflective mirror and an upper multilayer reflective mirror that are formed on the substrate and are formed from a periodic structure of a high-refractive index layer and a low-refractive index layer; an active layer provided between the lower multilayer reflective mirror and the upper multilayer reflective mirror; a lower contact layer positioned between the active layer and the lower multilayer reflective mirror, and is extended to an outer peripheral side of the upper multilayer reflective mirror; a lower electrode formed on a surface of a portion where the lower contact layer is extended; and an upper electrode for injecting a current to the active layer, wherein the surface-emitting laser elements are electrically connected in series to each other to form a series-connected element array.

Abstract: A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector.

Abstract: A laser system having separately electrically operable cavities for emitting modulated narrow linewidth light with first, second and third mirror structures separated by a first active region between the first and the second and by a second active region between the second and the third. The second mirror structure has twenty of more periods of mirror pairs.

Abstract: An optical device includes: a surface-emitting type semiconductor laser section; at least one isolation section formed above the surface-emitting type semiconductor laser section; and a photodetector section formed above the isolation section, wherein the surface-emitting type semiconductor laser section includes a first mirror, an active layer formed above the first mirror and a second mirror formed above the active layer, the photodetector section includes a first contact layer, a photoabsorption layer formed above the first contact layer and a second contact layer formed above the photoabsorption layer, and the isolation section includes a first isolation layer of a conductivity type different from a conductivity type of the second mirror, and a second isolation layer formed above the first isolation layer and having a conductivity type different from the conductivity type of the first contact layer and the first isolation layer.

Abstract: A method of producing a slider wafer populated with electromagnetic components optically aligned with photonic elements for HAMR applications. Laser chips are transferred from a laser substrate wafer to the slider wafer by a massively parallel printing transfer process. After wafer bonding the laser chips to the slider wafer, the shape and optical alignment of the photonic elements are precisely aligned en masse by lithographic processing.

Abstract: A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflection mirror of a first conduction type; an active region; a second semiconductor multilayer reflection mirror of a second conduction type; a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region; and a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region.

Abstract: A surface emitting laser element that includes a cylindrical mesa post in which a plurality of semiconductor layers including an active layer is grown and that emits a laser light in a direction perpendicular to a substrate surface, the surface emitting laser element including a dielectric multilayer film on a top surface of the mesa post in at least a portion over a current injection area of the active layer; and a dielectric portion that includes layers fewer than layers of the dielectric multilayer film and that is arranged on a portion excluding the portion over the current injection area on the top surface of the mesa post and on at least part of a side surface of the mesa post.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) is optimized for longer life of the VCSEL by controlling the distance of doped and undoped layers near an active region. In addition, the VCSEL optimized for reduced parasitic lateral current under an oxide of the VCSEL by forming a high Al confinement region and placing the oxide at a null in a standing optical wave. Further, the VCSEL is optimized to reduce resistance.

Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.

Abstract: The present invention provides a semiconductor device realizing improved adhesion between a low-dielectric-constant material and a semiconductor material. The semiconductor device includes, on a semiconductor layer, an adhesion layer and a low-dielectric-constant material layer in order from the semiconductor layer side. The adhesion layer has a projection/recess structure, and the low-dielectric-constant material layer is formed so as to bury gaps in the projection/recess structure.

Abstract: Disclosed is a surface emitting laser module including a surface emitting laser element formed in a semiconductor substrate and having a surface emitting laser array that emits light in a direction perpendicular to a surface of the semiconductor substrate; a package having a region in which the semiconductor substrate is provided; and a metal cap having a cylindrical part formed of metal, the cylindrical part having a transparent substrate on one side thereof and a bottom part on the other side thereof bonded to the package. The transparent substrate is provided in the metal cap in such a manner as to be inclined with respect to the semiconductor substrate, the package has a metal part at a bonding part thereof bonded to the metal cap, and the metal part and the metal cap are bonded together by welding.

Abstract: A surface emitting semiconductor laser includes: a semiconductor substrate; a lower reflector that is formed on the semiconductor substrate and includes a semiconductor multilayer of a first conduction type; an upper reflector that is formed above the semiconductor substrate and includes a semiconductor multilayer of a second conduction type; an active region interposed between the lower reflector and the upper reflector; a current confining layer that is interposed between the lower reflector and the upper reflector and has a conductive region having an anisotropic shape in a plane perpendicular to an optical axis; and an electrode that is formed on the upper reflector and has an opening via which a laser beam is emitted, the opening having different edge shapes in directions of the anisotropic shape.

Abstract: A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

Abstract: A vertical cavity surface light emitting device (VCSLED) with multiple active layers includes at least one optical resonance unit comprising a highly-doped conduction region (1), an insulating layer (2), a negative electrode (3), confinement layers (4, 6), an active layer (5), and a positive electrode (7). The optical resonance units are stacked repetitively in a vertical thickness of half wavelength to constitute an optical resonant cavity. In the laser produced from the VCSLED with multiple active layers, the VCSLED is sandwiched by reflectors (104, 105) for emitting and receiving laser light. The laser utilizes the ability of photonic crystal to emit coherent light to improve its electro-optical conversion efficiency and eliminate the fabrication of Bragg reflectors.

Abstract: A surface emitting laser array comprising a plurality of surface emitting laser devices each having a semiconductor layer containing a first reflection mirror, an active layer, a current confined portion and a second reflection mirror. The laser array further comprises a first metal material layer for dissipating heat formed through a first insulating layer on the semiconductor layer and a second metal material layer for injecting current into the active layer formed through a second insulating layer on the first metal material layer. The first metal material layer is commonly shared by the plurality of the surface emitting laser devices.

Abstract: A semiconductor laser apparatus has a Zener diode containing a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type joined with the first semiconductor region, and a vertical-cavity surface-emitting semiconductor laser diode stacked above the Zener diode and containing at least a first mirror layer of a first conduction type, a second mirror layer of a second conduction type and an active region sandwiched between the first and second mirror layers. The first semiconductor region and the second mirror layer are electrically connected and the second semiconductor region and the first mirror layer are electrically connected.