Semiconductor Patents (Class 372/75)
  • Patent number: 10218144
    Abstract: A method of bonding an RE:XAB gain medium to a heat spreader includes using a bonding solution of sodium silicate with concentration of sodium silicate is Na2O at 21.2% and SiO2 at 53% with PH>=11 mixed with nano-pure water in a 1:1 ration. Applying the bonding solution onto either a surface of the RE:XAB or a surface of the heat spreader, aligning the RE:XAB and the heat spreader, applying pressure to draw the surfaces of the RE:XAB gain medium and the heat spreader together thereby uniformly spreading the bonding solution; and then curing the bonding solution.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: February 26, 2019
    Assignee: LadarSystems
    Inventors: Michael Munroe, Edward Whitney Elliott, III, George Williams
  • Patent number: 10148059
    Abstract: A gain mirror is created for use as an optical amplifier in a solid state ring laser rotation sensor. Such a ring laser includes at least three mirrors for reflecting counter propagating laser beams around a closed loop optical path, wherein at least one of the mirrors is a gain mirror. The gain mirror is formed by applying a thin film of silica, a few half wavelengths thick and doped with Nd isotopes, onto a very high reflectivity mirror and then using a laser diode to pump it with intense light to form a population inversion in Nd3+ ions. An assembly consisting of this gain mirror and a pump laser diode can be used as an optical amplifier in a solid state ring laser to generate the two counter propagating laser light beams needed to measure rotation.
    Type: Grant
    Filed: June 17, 2017
    Date of Patent: December 4, 2018
    Inventor: Theodore John Podgorski
  • Patent number: 9846410
    Abstract: Systems, devices and methods are described including providing infrared (IR) laser radiation to a Digital Micromirror Device (DMD) array and using the DMD array to spatially modulate the IR laser radiation. The spatially modulated IR laser radiation may then be projected to form a voxel array where each voxel of the array represents to a volume of air wherein the IR laser radiation has been focused sufficiently to cause air to ionize. The voxel array may then be spatially rotated.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: December 19, 2017
    Assignee: Intel Corporation
    Inventor: Kapil Kanugo
  • Patent number: 9412900
    Abstract: Example embodiments relate to a green-light emitting device including a quaternary quantum well on a vicinal c-plane. The light-emitting device includes a substrate having a vicinal c-plane surface and a light-emitting layer on the vicinal c-plane surface of the substrate. The light-emitting layer includes a quantum well layer of AlxInyGa1-x-yN and quantum barrier layers of InzGa1-zN disposed on and under the quantum well layer respectively, and 0<x<1, 0<y<1, and 0<z<1.
    Type: Grant
    Filed: January 22, 2015
    Date of Patent: August 9, 2016
    Assignees: AICT (Advanced Institutes of Convergence Technology), Samsung Electronics Co., Ltd.
    Inventors: Yong-Hee Cho, Sungjin Kim, Munbo Shim, Yukeun Eugene Pak
  • Patent number: 9209605
    Abstract: A laser diode subassembly is disclosed, in which dichroic reflectors are disposed sequentially one after another forming an array or stack, each reflector having a sequential array index. An array of laser diode emitters is provided, each emitter having a sequential array index. Individual reflectors of the array redirect laser sub-beams from individual laser diode emitters having same array indices, to propagate via dichroic reflectors having higher array indices, so as to form a combined optical beam. A common partial reflector may be used for the laser diode emitters instead of individual wavelength selective reflectors for each laser diode emitter.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: December 8, 2015
    Assignee: Lumentum Operations LLC
    Inventors: James Yonghong Guo, Lei Xu
  • Patent number: 9184559
    Abstract: The present invention is intended to provide an electron-beam-pumped light source capable of irradiating one surface of a semiconductor light-emitting device uniformly with an electron beam, and capable of obtaining a high light output without increasing an accelerating voltage of the electron beam and, in addition, capable of efficiently cooling the semiconductor light-emitting device. An electron-beam-pumped light source of the present invention includes: an electron beam source and a semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, and characterized in that the electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, and light exits from a surface through which the electron beam from the electron beam source of the semiconductor light-emitting device enters.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: November 10, 2015
    Assignee: Ushio Denki Kabushiki Kaisha
    Inventors: Masanori Yamaguchi, Ken Kataoka, Tsuyoshi Maesoba, Hiroyuki Takada, Hiroshige Hata
  • Patent number: 9166130
    Abstract: A first contact surface of a semiconductor laser chip can be formed to a first target surface roughness and a second contact surface of a carrier mounting can be formed to a second target surface roughness. A first bond preparation layer comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer comprising a second metal can optionally be applied to the formed second contact surface. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.
    Type: Grant
    Filed: October 24, 2012
    Date of Patent: October 20, 2015
    Assignee: SpectraSensors, Inc.
    Inventors: Alfred Feitisch, Gabi Neubauer, Mathias Schrempel
  • Patent number: 9106053
    Abstract: A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, ?lase. Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR). The active zone including a plurality of the DBR optical pairs is configured to provide optical feedback for the SEL at ?lase.
    Type: Grant
    Filed: October 15, 2012
    Date of Patent: August 11, 2015
    Assignee: PALO ALTO RESEARCH CENTER INCORPORATED
    Inventor: Thomas Wunderer
  • Patent number: 9091863
    Abstract: A system for vibrating optical components using an airflow device is provided. The system includes: one or more elongated fibers, each of the one or more elongated fibers comprising a respective diameter; one or more optical components for at least one of conveying coherent light and interacting with the coherent light; and, an airflow device arranged to flow air over, and about perpendicular to, the one or more elongated fibers at a velocity, a combination of the respective diameter of each of the one or more elongated fibers and the velocity of the air configured to cause the one or more elongated fibers to produce shedding vortices that cause the one or more elongated fibers and the one or more optical components to each vibrate.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: July 28, 2015
    Assignee: CHRISTIE DIGITAL SYSTEMS USA, INC.
    Inventor: Michael Bishop
  • Patent number: 9019999
    Abstract: A compact, optically-pumped solid-state microchip laser device uses efficient nonlinear intracavity frequency conversion for obtaining low-cost green and blue laser sources. The laser includes a solid-state gain medium, such as Nd:YVO4, and a nonlinear crystal. The nonlinear crystal is formed of periodically poled lithium niobate or periodically poled lithium tantalate, and the crystal is either MgO-doped, ZnO-doped, or stoichiometric to ensure high reliability. The nonlinear crystal provides efficient frequency doubling to translate energy from an infrared pump laser beam into the visible wavelength range. The laser device is assembled in a package having an output aperture for the output beam and being integrated with an optical bench accommodating a laser assembly. The package encloses and provides heat sinking for the semiconductor diode pump laser, the microchip laser cavity assembly, the optical bench platform, and electrical leads.
    Type: Grant
    Filed: September 4, 2009
    Date of Patent: April 28, 2015
    Assignee: Spectralus Corporation
    Inventors: Stepan Essaian, Dzhakhangir Khaydarov, Andrei V. Shchegrov
  • Publication number: 20150110146
    Abstract: The present invention relates to an optically pumped solid state laser device, comprising a solid state laser medium (300-302) in a laser resonator. Several pump laser diodes (100) are arranged to optically pump said solid state laser medium (300-302) by reflection of pump radiation at a mirror element (200) arranged on the optical axis of the laser resonator. The mirror element (200) is designed to direct said pump radiation to the solid state laser medium (300-302) and to form at the same time one of the resonator mirrors of the laser resonator. With this design of the solid state laser device an easy alignment of the pump optics is achieved. The proposed solid state laser device can be realized in a compact form.
    Type: Application
    Filed: November 15, 2012
    Publication date: April 23, 2015
    Inventor: Stephan Gronenborn
  • Patent number: 9008146
    Abstract: A semiconductor laser excitation solid-state laser comprises: a planar waveguide-type solid-state laser element which is disposed on a solid-state laser substrate; an LD array; and a sub-mount substrate on which joining layers of two different thicknesses are formed on the same plane; wherein the planar waveguide-type solid-state laser element is joined to the sub-mount substrate on the surface on the opposite side of a surface on which the solid-state laser substrate is mounted, via a joining layer of one of the thicknesses out of the joining layers of the two different thicknesses, and the LD array is joined to the sub-mount substrate on the surface on a light-emitting layer side, via another joining layer of the other thickness out of the joining layers of the two different thicknesses.
    Type: Grant
    Filed: November 16, 2011
    Date of Patent: April 14, 2015
    Assignee: Mitsubishi Electric Corporation
    Inventors: Motoaki Tamaya, Akira Yokoyama
  • Publication number: 20150092802
    Abstract: The present invention relates to an optically pumped vertical external-cavity surface-emitting laser device comprising at least one VECSEL (200) and several pump laser diodes (300). The pump laser diodes (300) are arranged to optically pump the active region (108) of the VECSEL (200) by reflection of pump radiation (310) at a mirror element (400). The mirror element (400) is arranged on the optical axis (210) of the VECSEL (200) and is designed to concentrate the pump radiation (310) in the active region (108) and to form at the same time the external mirror of the VECSEL (200). The proposed device avoids time consuming adjustment of the pump lasers relative to the active region of the VECSEL and allows a very compact design of the laser device.
    Type: Application
    Filed: April 11, 2013
    Publication date: April 2, 2015
    Applicant: Koninklijke Philips N.V.
    Inventors: Stephan Gronenborn, Michael Miller
  • Patent number: 8989224
    Abstract: There is disclosed an apparatus for femtosecond laser optically pumped by a laser diode pumping module that is able to mechanically couple optical mounts for mounting optical mounts to each other by using a bar with a low thermal expansion coefficient and to form a light pumping module distant from a laser platform or a case, to provide a stable mode locking for an ultrashort laser and to enhance a power stability and a beam stability.
    Type: Grant
    Filed: March 29, 2013
    Date of Patent: March 24, 2015
    Assignee: Korea Electrotechnology Research Institute
    Inventors: Guang Hoon Kim, Uk Kang, Ju Hee Yang, Elena Sall, Sergey Chizhov, Andrey Kulik
  • Patent number: 8953648
    Abstract: The invention is an apparatus and method for free space pumping of active double-clad fiber based lasers and amplifiers. The apparatus comprises a laser emitting a signal laser beam; an active double-clad fiber having a core defining an optical axis of the apparatus and a pump cladding defining a cone of numerical aperture; an optical arrangement directing the signal laser beam along the optical axis through the core of the active double-clad fiber; at least one pump source emitting a pump beam; at least one delivery means coupling the pump beam to the pump cladding of the active double-clad fiber; and an optical arrangement coupling the amplified signal laser beam exiting the active double-clad fiber out of the apparatus.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: February 10, 2015
    Assignee: Ben-Gurion University of the Negev Research & Development Authority
    Inventors: Amiel Ishaaya, Boris Shulga
  • Patent number: 8948220
    Abstract: A microcrystal laser assembly including a gain-crystal includes a frame having a high thermal conductivity. The frame has a base with two spaced apart portions extending from the base. The gain-crystal has a resonator output minor on one surface thereof. The gain-crystal is supported on the spaced-apart portions of the frame in the space therebetween. Another resonator minor is supported in that space, spaced apart from the output mirror, on a pedestal attached to the base of the frame. The pedestal and the frame have different CTE. Varying the frame temperature varies the spacing between the resonator minors depending on the CTE difference between the pedestal and the frame.
    Type: Grant
    Filed: December 18, 2012
    Date of Patent: February 3, 2015
    Assignee: Coherent GmbH
    Inventor: Stefan Spiekermann
  • Publication number: 20150016484
    Abstract: An end surface 3b of a solid-state laser element 3 is sloped in such a way that, assuming that laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, an end surface 4a of a wavelength conversion element 4 is sloped in such a way that, assuming that the laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, and the end surface 3b and the end surface 4b are arranged in such a way as to be opposite to each other.
    Type: Application
    Filed: March 19, 2012
    Publication date: January 15, 2015
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Kyosuke Kuramoto, Takayuki Yanagisawa, Yoshihito Hirano
  • Publication number: 20140377459
    Abstract: A semiconductor distributed Bragg reflector (DBR) including a first multilayer structure including a plurality of first semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers; a second multilayer structure including a plurality of third semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and a protection layer interposed between the first multilayer structure and the second multilayer structure. The second semiconductor layer has a lower decomposition temperature than the first semiconductor layer. The third semiconductor layer has a lower decomposition temperature than the second semiconductor layer.
    Type: Application
    Filed: June 17, 2014
    Publication date: December 25, 2014
    Inventor: Takeshi Kawashima
  • Patent number: 8913643
    Abstract: A laser system for an ignition device of an internal combustion engine, in particular of a motor vehicle, having a first laser device and a second laser device situated downstream from the first laser device and optically connected to it, the first laser device being designed for generating pump light for optically pumping the second laser device. The first laser device has a reflecting means in an area which is optically connected to the second laser device, the reflecting arrangement being designed for reflecting radiation generated by the second laser device.
    Type: Grant
    Filed: February 19, 2010
    Date of Patent: December 16, 2014
    Assignee: Robert Bosch GmbH
    Inventors: Werner Herden, Hans-Jochen Schwarz, Heiko Ridderbusch
  • Publication number: 20140355638
    Abstract: An improved high power special filter, system and method. In the system, an optical fiber is disposed inside a ferule channel structure, and the channel structure is aligned with a focusing lens system. The end of the fiber is at a distance D from the channel opening that faces the focusing lens system, and D is determined by the system's numeric aperture factor and the cladding thickness of the optical fiber.
    Type: Application
    Filed: May 29, 2013
    Publication date: December 4, 2014
    Applicant: IPG Photonics Corporation
    Inventors: Igor Berishev, Vadim Chuyanov, Alexey Komissarov, Nikolai Strougov
  • Patent number: 8897333
    Abstract: Efficient laser diode excited Thulium (Tm) doped solid state systems, directly matched to a combination band pump transition of Carbon Dioxide (CO2), have matured to the point that utilization of such in combination with CO2 admits effectively a laser diode pumped CO2 laser. The laser diode excited Tm solid state pump permits Continuous Wave (CW) or pulsed energy application. Appropriate optical pumping admits catalyzer free near indefinite gas lifetime courtesy of the absence of significant discharge driven dissociation and contamination. As a direct consequence of the preceding arbitrary multi isotopologue CO2, symmetric and asymmetric, gas mixes may be utilized without significant degradation or departure from initial mix specifications. This would admit, at raised pressure, a system continuously tunable from approximately 9 ?m to approximately 11.5 ?m, or sub picosecond amplification.
    Type: Grant
    Filed: March 2, 2012
    Date of Patent: November 25, 2014
    Inventor: Robert Neil Campbell
  • Patent number: 8891564
    Abstract: There is disclosed a femtosecond laser apparatus including a first laser material comprising Ng, Np and Nm axes spatially perpendicular to each other; a second laser material comprising Np axis, Nm axis and Ng axis; and a first laser diode and second laser diodes, wherein the traveling direction of laser beams generated from the first and second laser materials is substantially parallel to Ng axis of the first laser material and the polarizing direction of laser beams generated from the first and second laser materials is substantially parallel to Np axis of the first laser material, and the traveling direction of laser beams generated from the first and second laser materials is substantially parallel to Np axis of the second material and the polarizing direction of laser beams generated from the first and second laser materials is substantially parallel to Nm axis of the second laser material.
    Type: Grant
    Filed: January 29, 2013
    Date of Patent: November 18, 2014
    Assignee: Korea Electrotechnology Research Institute
    Inventors: Guang Hoon Kim, Uk Kang, Ju Hee Yang, Dae Sik Lee, Elena Sall, Sergey Chizhov, Andrey Kulik, Vladimir Yashin
  • Patent number: 8873595
    Abstract: The present invention relates to a method of processing a metal thin film formed on a transparent substrate by radiating pulsed light onto the metal thin film, and having the steps of repeatedly outputting the pulsed light by directly modulating a semiconductor laser of the seed light source in accordance with electric signals, amplifying the pulsed light using an optical amplifier including an optical amplification medium, controlling the full width at half maximum of the pulsed light that is amplified and outputted by the optical amplifier to be 0.5 ns or less, and removing the metal thin film by radiating the pulsed light thus having the controlled full width at half maximum onto the metal thin film through the transparent substrate.
    Type: Grant
    Filed: September 13, 2011
    Date of Patent: October 28, 2014
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Motoki Kakui
  • Patent number: 8831062
    Abstract: A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region.
    Type: Grant
    Filed: April 6, 2011
    Date of Patent: September 9, 2014
    Assignee: II-VI Laser Enterprise GmbH
    Inventors: Hans-Ulrich Pfeiffer, Andrew Cannon Carter, Jörg Troger, Norbert Lichtenstein, Michael Schwarz, Abram Jakubowicz, Boris Sverdlov
  • Patent number: 8824521
    Abstract: A solid laser apparatus which includes: two reflection elements for forming an oscillator; a plate-shaped gain medium being disposed between the two reflection elements, thereby augmenting a stimulated emission light in a thickness-wise direction; a doughnut- or deformed-doughnut-type planar waveguide being disposed so as to make an inner peripheral face thereof come in contact with an outer peripheral face of the plate-shaped gain medium; and a plurality of excited-light sources being directed in five or more directions, the excited-light sources being coupled to an outer peripheral face of the doughnut- or deformed-doughnut-type planar waveguide so as to make excited lights propagate from the outer peripheral face of the doughnut- or deformed-doughnut-type planar waveguide to the plate-shaped gain medium.
    Type: Grant
    Filed: August 1, 2012
    Date of Patent: September 2, 2014
    Assignee: Inter-University Research Institute Corporation National Institutes of Natural Sciences
    Inventors: Takunori Taira, Weipeng Kong
  • Patent number: 8817837
    Abstract: An exemplary laser system is disclosed which includes a pump laser diode array and laser gain material, in which the array generates optical radiation having a predetermined total linewidth approximately 20 nm wide constructed from a plurality of individual wavelengths with a linewidth of up to 8 nm, the center wavelength of radiation being for example within the absorption band of laser gain material used at the center point of the operating temperature of the array. The system can include a highly reflecting plane mirror with periodic transmitting patches placed between the laser diode array and the laser gain material, the size of the transmitting patches being such that minimal pump radiation is lost.
    Type: Grant
    Filed: November 21, 2011
    Date of Patent: August 26, 2014
    Assignee: Selex ES Ltd
    Inventors: John Barr, Andrew White, Stephen Moore
  • Publication number: 20140233598
    Abstract: A semiconductor laser excitation solid-state laser comprises: a planar waveguide-type solid-state laser element which is disposed on a solid-state laser substrate; an LD array; and a sub-mount substrate on which joining layers of two different thicknesses are formed on the same plane; wherein the planar waveguide-type solid-state laser element is joined to the sub-mount substrate on the surface on the opposite side of a surface on which the solid-state laser substrate is mounted, via a joining layer of one of the thicknesses out of the joining layers of the two different thicknesses, and the LD array is joined to the sub-mount substrate on the surface on a light-emitting layer side, via another joining layer of the other thickness out of the joining layers of the two different thicknesses.
    Type: Application
    Filed: November 16, 2011
    Publication date: August 21, 2014
    Applicant: Mitsubishi Electric Corporation
    Inventors: Motoaki Tamaya, Akira Yokoyama
  • Patent number: 8804778
    Abstract: An extreme ultraviolet light source apparatus comprises a laser apparatus having a master oscillator outputting one or more longitudinal-mode-laser lights, an amplifier with a molecular gas as an amplifying agency amplifying a longitudinal-mode laser light of which wavelength is included in one of amplifiable lines, and a controller adjusting the master oscillator so that the wavelength of the longitudinal-mode laser light outputted from the master oscillator is included in one of the amplifiable lines, the laser apparatus being used as a driver laser, wherein the laser apparatus irradiates a target material with a laser light for generating plasma, and the extreme ultraviolet light is emitted from the plasma and outputted from the extreme ultraviolet light source apparatus.
    Type: Grant
    Filed: October 16, 2009
    Date of Patent: August 12, 2014
    Assignee: Gigaphoton Inc.
    Inventors: Osamu Wakabayashi, Akira Endo, Krzysztof Nowak, Takashi Suganuma, Masato Moriya
  • Publication number: 20140185643
    Abstract: Gain switched laser diode pulses are used as seed pulses for optical pulse generation. ASE is reduced by applying a prebias to the laser diodes at an amplitude less than that associated with a laser diode threshold. An electrical seed pulse having an amplitude larger than that associated with laser threshold is applied within about 10-100 ns of the prebias pulse. The resulting laser diode pulse can be amplified in a pumped, rare earth doped optical fiber, with reduced ASE.
    Type: Application
    Filed: December 30, 2013
    Publication date: July 3, 2014
    Applicant: nLight Photonics Corporation
    Inventors: Timothy S. McComb, Dennis McCal
  • Publication number: 20140185644
    Abstract: Optical fibers that provide stable output beam sizes have core refractive indices that decrease non-monotonically from a core center to a core/cladding interface. A maximum refractive index of the core is situated at a radius of between about ½ and ¾ of the core radius so that a core center has a depressed refractive index. Such fibers are included in diode pumped solid state lasers to deliver pump laser power to a laser medium.
    Type: Application
    Filed: December 30, 2013
    Publication date: July 3, 2014
    Applicant: nLight Photonics Corporation
    Inventors: Jay Small, Ken Gross, Shuang Li
  • Patent number: 8767792
    Abstract: Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: July 1, 2014
    Assignee: Intel Corporation
    Inventors: John E. Bowers, Oded Cohen, Alexander W. Fang, Richard Jones, Mario J. Paniccia, Hyundai Park
  • Patent number: 8767789
    Abstract: A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets. Multiple applications of the laser material are contemplated in the invention.
    Type: Grant
    Filed: December 1, 2011
    Date of Patent: July 1, 2014
    Assignee: The UAB Research Foundation
    Inventors: Sergey B. Mirov, Vladimir V. Fedorov
  • Publication number: 20140169395
    Abstract: A solid laser apparatus which includes: two reflection elements for forming an oscillator; a plate-shaped gain medium being disposed between the two reflection elements, thereby augmenting a stimulated emission light in a thickness-wise direction; a doughnut- or deformed-doughnut-type planar waveguide being disposed so as to make an inner peripheral face thereof come in contact with an outer peripheral face of the plate-shaped gain medium; and a plurality of excited-light sources being directed in five or more directions, the excited-light sources being coupled to an outer peripheral face of the doughnut- or deformed-doughnut-type planar waveguide so as to make excited lights propagate from the outer peripheral face of the doughnut- or deformed-doughnut-type planar waveguide to the plate-shaped gain medium.
    Type: Application
    Filed: August 1, 2012
    Publication date: June 19, 2014
    Applicant: INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION NATIONAL INSTITUTES OF NATURAL SCIENCES
    Inventors: Takunori Taira, Weipeng Kong
  • Patent number: 8755416
    Abstract: A laser including a semiconductor laser stack group, a beam compositor, a pump beam collimator, a thin-disk laser crystal, a first and a second parabolic reflectors with the same facial contour function, a corrective reflector, an output mirror, and a jet-flow impact cooling system. The thin-disk laser crystal and the output mirror form a laser resonant cavity. The first parabolic reflector, second parabolic reflector, thin-disk laser crystal, and corrective reflector form a multi-pumping focus cavity. The jet-flow impact cooling system is used for cooling the thin-disk laser crystal. The pump light produced by the semiconductor laser stack group is composited by the beam compositor, collimated by the pump light collimator, and enters the multi-pumping focus cavity. Within the multi-pumping focus cavity, the pump light is focused, collimated, and deflected to converge on the thin-disk laser crystal. The laser resonant cavity produces and outputs a laser beam.
    Type: Grant
    Filed: October 19, 2012
    Date of Patent: June 17, 2014
    Assignee: Huazhong University of Science and Technology
    Inventors: Xiao Zhu, Guangzhi Zhu, Changhong Zhu, Lijun Qi, Jianli Shang, Xingyun Duan, Peng Chen
  • Patent number: 8743917
    Abstract: A wavelength conversion laser light source, including a solid-state laser medium configured to generate fundamental light; a wavelength conversion element configured to convert the fundamental light into second harmonic light which has a higher frequency than the fundamental light; and a conductive material in contact with the wavelength conversion element, wherein the wavelength conversion element includes a polarization inverted structure formed with a polarization inversion region, and a first lateral surface which perpendicularly intersects with the polarization inversion region, and the conductive material is in contact with the first lateral surface.
    Type: Grant
    Filed: December 10, 2010
    Date of Patent: June 3, 2014
    Assignee: Panasonic Corporation
    Inventors: Hiroyuki Furuya, Tomoya Sugita
  • Publication number: 20140133515
    Abstract: The system and method for modifying the output beam parameters of a plurality of laser diode array sources comprises scalable pump sources for use with diode pumped alkali lasers. The present invention optimizes a diode laser pump source by spectrally-narrowing stacks of diode laser array bars using a single external cavity outfitted with a proprietary step-mirror and cylindrical optical elements. The system and method of the present invention multiplies by one-hundred fold the number of stacks that can be narrowed, vastly increasing the attainable power output by utilizing beam-splitters.
    Type: Application
    Filed: November 8, 2013
    Publication date: May 15, 2014
    Inventors: F. William Hersman, Jan Distelbrink
  • Patent number: 8687659
    Abstract: A system (100) for generating a millimeter wave signals from heterodyning wavelengths from a multi-wavelength signal generated by a Brillouin-Erbium fiber laser (101). The Brillouin-Erbium fiber laser (101) includes a source laser (105) that transmits a seed signal. An optical directional coupler (110) has a first input that receives the seed signal from the source laser and a first output. An Erbium doped fiber amplifier (115) has an input connected to the first output of the optical directional coupler and an output. The Erbium doped fiber amplifier amplifies the seed signal. A four port circulator (120) has a first port that receives the seed signal from the Erbium doped fiber amplifier. A Brillouin gain medium (135) is connected to a second port and a third port of the circulator.
    Type: Grant
    Filed: November 15, 2010
    Date of Patent: April 1, 2014
    Assignee: Telekom Malaysia Berhad
    Inventors: Asmahanim bte Ahmad, Mohamed Razman bin Yahya, Syamsuri bin Yaakob, Mohd Adzir Mahdi, Romli Mohamad, Abdullah bin Man, Muhammad Zamsuri bin Abdul Kadir, Yu Gang Shee
  • Publication number: 20140086271
    Abstract: The closed cycle solid state optically pumped gas hybrid (chemical recovery) system utilizes a laser diode excited solid state, fiber or bulk, laser as a pump for a molecular gas, or gas mix, medium. The existence of efficient high power laser diode excited solid state fiber or bulk lasers, output spectrally matched to suitable principle and excited level 1st and 2nd overtones of relevant gases, is the enabling system technology. The utilization of such in combination with suitable gases introduces a range of viable, in principle sourcing on laser diodes and thus effectively laser diode pumped, gas laser systems with access to the approximately 4.5 ?m to approximately 5.4 ?m spectral region. Continuous wave or pulsed operation, with significant energy capability courtesy of solid state storage, is admitted.
    Type: Application
    Filed: November 22, 2013
    Publication date: March 27, 2014
    Inventor: ROBERT NEIL CAMPBELL
  • Publication number: 20140054475
    Abstract: Methods, structures, devices and systems are disclosed for implementing compact (e.g., nanoscale) coaxial lasers with coaxial cavity geometries which can be used to construct various coaxial cavity lasers that can operate in single mode, at room-temperature, and produce continuous-wave lasing. The described laser systems can also operate at low-temperatures, and provide thresholdless lasing using a spectrally broadband semiconductor gain medium. The cavity of the compact lasers includes a central metal core and a hollow ring surrounding the central metal core, formed within a housing with an open terminal and a closed terminal. The open terminal is positioned to both receive pump light and output laser light, and the closed terminal includes a metal cap that encloses the central metal rod and one side of the hollow ring. The described nano cavities also include a ring-shaped gain medium section, and ring-shaped lower and upper plug sections.
    Type: Application
    Filed: August 23, 2013
    Publication date: February 27, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Mercedeh Khajavikhan, Yeshaiahu Fainman
  • Patent number: 8649403
    Abstract: When an output instruction is input to a control unit, the control unit controls a seed laser light source and a pumping light source to be either in a pre-pumped state or in an output state. In the pre-pumped state, the pumping light source outputs, for a predetermined period, pumping light with an intensity determined based on the duration of the period of time from when the output state prior to the input of the output instruction to the control unit comes to an end till when the output instruction is input to the control unit. In the output state, to cause the output unit to output laser light, the seed laser light source outputs laser light, and the pumping light source outputs pumping light.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: February 11, 2014
    Assignee: Fujikura Ltd.
    Inventors: Yasuhiro Oba, Michihiro Nakai
  • Publication number: 20140029640
    Abstract: In a conventional solid-state laser device, uniformity of an excitation distribution around the axis of a solid-state laser medium is only considered, and symmetry of the excitation distribution in the optical axis direction of the solid-state laser device as a whole is not considered. Therefore, there has been a problem that it is difficult to generate a high-power and high-quality laser beam with high efficiency. In order to solve the problem, in the present invention, excitation modules 51, 52 of an even number is provided, along the optical axis of a solid-state laser beam 18, near the center of a resonator, and semiconductor lasers 21-28 serving as excitation light sources and solid-state laser media 11, 12 provided in the excitation module 51 or in the excitation module 52 are arranged to be symmetrical with respect to a virtual symmetry plane 61 located at a center gap between the excitation modules of the even number.
    Type: Application
    Filed: April 8, 2011
    Publication date: January 30, 2014
    Applicant: Mitsubishi Electric Corporation
    Inventors: Tetsuo Kojima, Hiroyuki Suzuki, Tatsuhide Takayama, Yoshio Saitou
  • Patent number: 8592236
    Abstract: A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.
    Type: Grant
    Filed: November 27, 2007
    Date of Patent: November 26, 2013
    Assignee: OSRAM GmbH
    Inventors: Tony Albrecht, Norbert Linder, Johann Luft
  • Patent number: 8594147
    Abstract: A diode pumped solid-state laser for high shock, high vibration environments such as those found in laser ignition systems for artillery systems which internally integrate into the breech of an artillery system such as a 155 mm howitzer. The diode pumped solid-state laser employs a unique gain medium mounting which permits its use in such high shock/high vibration environments. Contributing further to robustness is a monolithic design based on diode arrays mounted in a linear configuration along with an advanced polycrystalline gain medium laser rod. Advantageously, and in sharp contrast to laser ignition systems incorporating flash lamps, the diode pumped solid-state laser of the present invention permits a seamless integration into a howitzer artillery weapons system without other complex mounting provisions or shock isolation system(s).
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: November 26, 2013
    Assignee: The United States of America as Represented by the Secretary of the Army
    Inventors: Gregory Burke, Luke Helsel, Thomas DeVoe, Jacqueline Quinn Baeder, David Bound
  • Patent number: 8594142
    Abstract: A wavelength-tunable light source includes a quantum cascade laser that emits light from a first end and a second end, an optical system that collimates the light emitted from the first end, a first reflecting section on which the light collimated by the optical system is made incident, and a second reflecting section that partially reflects the light emitted from the second end of the quantum cascade laser and transmits the remaining light. The first reflecting section includes a plurality of diffractive gratings whose diffractive properties are different from each other and whose lattice plane directions are variable, and the first reflecting section diffracts a light at a particular wavelength corresponding to the diffractive property and the lattice plane direction of the selected diffractive grating in the direction opposite to the incident direction.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: November 26, 2013
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Tatsuo Dougakiuchi, Kazuue Fujita, Tadataka Edamura, Naota Akikusa
  • Patent number: 8594141
    Abstract: The present invention provides a femtosecond laser apparatus using laser diode optical pumping. To provide a stable mode locking and improve power stability and beam stability in an ultrafast laser such as a femtosecond laser, optical mounts which have mounted thereon optical parts of a diode pumping unit are mechanically engaged using bars of low thermal expansion coefficients and form a pumping module, and the pumping module is maximally separated from a laser platform or case.
    Type: Grant
    Filed: July 30, 2012
    Date of Patent: November 26, 2013
    Assignee: Korea Electrotechnology Research Institute
    Inventors: Guang Hoon Kim, Uk Kang, Ju Hee Yang, Elena Sall, Sergey Chizhov, Andrey Kulik
  • Patent number: 8588267
    Abstract: An array of optical fibers includes a plurality of optical fibers. Each optical fiber includes a core having a substantially rectangular cross section, and cladding surrounding the core. The cladding includes a pair of substantially parallel flats. The array of optical fibers can be used in combination with a plurality of laser diodes to provide a laser pump whereby an input end of each optical fiber is optically coupled to the output of a respective one of the plurality of laser diodes, and where the output ends of the optical fibers are arranged in an array.
    Type: Grant
    Filed: July 24, 2012
    Date of Patent: November 19, 2013
    Assignee: Lockheed Martin Corporation
    Inventor: David L. Panak
  • Patent number: 8582613
    Abstract: Disclosed is a laser apparatus of amplifying a laser pulse output using an anisotropic laser crystal through chirped pulse amplification. The laser apparatus includes a laser resonator. The laser resonator includes a plurality of anisotropic laser crystals, generates a shorter femtosecond pulse by widening a spectrum bandwidth through a combination of different gain spectrum distributions using the anisotropic laser crystals, and allows a laser beam to travel in axial directions with different thermal characteristics of the anisotropic layer crystals in order to reduce a thermal effect.
    Type: Grant
    Filed: July 31, 2012
    Date of Patent: November 12, 2013
    Assignee: Korea Electrotechnology Research Institute
    Inventors: Guang Hoon Kim, Uk Kang, Ju Hee Yang, Dae Sik Lee, Elena Sall, Sergey Chizhov, Andrey Kulik, Vladimir Yashin
  • Publication number: 20130287058
    Abstract: A system and method for reducing the M2 value of a single asymmetric laser emitter while maintaining the power output of the emitter. In some embodiments the brightness of the output of such a system is equivalent to a portioned section of the single laser emitter. A WBC step is performed along a portioned or non-portioned single laser emitter to reduce the M2 value.
    Type: Application
    Filed: June 25, 2013
    Publication date: October 31, 2013
    Applicant: TERADIODE, INC.
    Inventors: Bien Chann, Robin Huang, Parviz Tayebati
  • Patent number: 8565281
    Abstract: Strongly confined semiconductor quantum dots theoretically offer for broadband and continuous tunability of their emitting wavelength based upon simply varying the particle size. However, prior art consistently has demonstrated a lower particle size limit below which optical gain cannot be achieved, for example 2.3 nm for CdSe in toluene. As such the prior art points to combinations of alternative materials and host media as the route to achieving the goal of broadband emission sources using quantum dots. However, according to the invention optical gain can be achieved in quantum dots below these previous experimental limits by resonantly pumping the quantum dots to a specific excitonic state, i.e. electron position relative to the quantum dot, such that the multiexcitonic interferences are minimized. Using this approach optical gain in CdSe of R=2.1 nm and 1.5 nm has been demonstrated in the yellow/amber region of the visible spectrum.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: October 22, 2013
    Assignee: The Royal Institute for the Advancement of Learning/McGill University
    Inventors: Patanjali Kambhampati, Ryan Cooney, Samuel Sewall
  • Publication number: 20130250995
    Abstract: An exemplary laser system is disclosed which includes a pump laser diode array and laser gain material, in which the array generates optical radiation having a predetermined total linewidth approximately 20 nm wide constructed from a plurality of individual wavelengths with a linewidth of up to 8 nm, the centre wavelength of radiation being for example within the absorption band of laser gain material used at the centre point of the operating temperature of the array. The system can include a highly reflecting plane mirror with periodic transmitting patches placed between the laser diode array and the laser gain material, the size of the transmitting patches being such that minimal pump radiation is lost.
    Type: Application
    Filed: November 21, 2011
    Publication date: September 26, 2013
    Applicant: Selex ES Ltd
    Inventors: John Barr, Andrew White, Stephen Moore