Abstract: A laser processing apparatus includes a light source configured to emit laser light; a power supply configured to supply a current to the light source; a deflection unit on an optical path of the laser light and including an optical element configured to change an amount of transmission of the laser light to deflect at least a part of the laser light; an optical separation unit on the optical path of the laser light and being configured to shield higher-order light included in the laser light and deflected by the optical element in the deflection unit, and transmit zero-order light that is included in the laser light and passes through the deflection unit; and a signal synchronization unit configured to control the power supply to selectively turn the current on or off in synchronization with a timing at which the higher-order light is deflected by the optical element.

Abstract: A high-efficiency laser pumping device is provided, wherein a dielectric with or without a tapered aperture is used to accept, guide, and concentrate a pump light toward a laser gain material. Preferably, the dielectric is also a heat insulator between the pump-light source and the laser gain material. The pump-light source includes an array of light-emitting diodes, or an array of laser diodes, or an array of mixed light-emitting-diodes and laser diodes. Preferably, the input and output faces of the dielectric are optically coated with dielectric layers to maximize the pump brightness toward the laser gain material. A high-efficiency laser-pumping system with active cooling apparatus is further provided, wherein a plural number of the optical-guiding and thermal-insulation dielectrics are arranged to receive the pump lights from a plural number of pump-light sources, configured to concentrate all the pump light toward a laser gain material.

Abstract: Gaseous laser systems and related techniques are disclosed. Techniques disclosed herein may be utilized, in accordance with some embodiments, in providing a gaseous laser system with a configuration that provides (A) pump illumination with distinct edge surfaces for an extended depth and (B) an output beam illumination from a resonator cavity with distinct edges in its reflectivity profile, thereby providing (C) pump beam and output beam illumination on a volume so that the distinct edge surfaces of its pump and beam illumination are shared-edge surfaces with (D) further edge surfaces of the amplifier volume at the surfaces illuminated directly by the pump or output beams, as defined by optical windows and (optionally) by one or more flowing gas curtains depleted of the alkali vapor flowing along those optical windows. Techniques disclosed herein may be implemented, for example, in a diode-pumped alkali laser (DPAL) system, in accordance with some embodiments.

Abstract: Provided are a laser combining apparatus and a display device. The laser combining apparatus includes a first group of light sources including first light source arrays, a second group of light sources including second light source arrays, a reflection apparatus including first and second reflection strips, a light converging apparatus and a light collection apparatus. Each first reflection strip reflects light emitted from at least one first light source array, each second reflection strip reflects light emitted from at least one second light source array, and light emitted from each first reflection strip and light emitted from each second reflection strip are also guided to the light converging apparatus. The light converging apparatus converges the light emitted from the first reflection strips and the second reflection strips to the light collection apparatus. The light collection apparatus collects the light converged by the light converging apparatus and then emitting same.

Abstract: A coherent fiber bundle may be used to optically connect an array of microLEDs to an array of photodetectors in an optical communication system.

Abstract: An emitter array may comprise a plurality of emitters that includes two adjacent emitters. The emitter array may comprise a plurality of emitters that includes two adjacent emitters. The ohmic metal layer may include a portion that is shared by, and located between, the two adjacent emitters. The emitter array may comprise a protective layer over the ohmic metal layer. The emitter array may comprise a via through the protective layer to the portion. The via is shared by, and located between, the two adjacent emitters.

Abstract: Systems, devices, and methods for providing optical engines and laser projectors that are well-suited for use in wearable heads-up displays (WHUDs) are described. The optical engines of the present disclosure may integrate a plurality of laser diodes (e.g., 3 laser diodes, 4 laser diodes) within a single, hermetically or partially hermetically sealed, encapsulated package. Wavelength stabilization for the laser diodes is achieved by controlling the temperature of the lasers to always be in a particular range of operating specifications which provides wavelength stabilization that meets particular performance criteria. The lasers themselves may be used for temperature control by selectively switching them on to maintain their temperature within a specified range. Alternatively, compact resistive heaters may be positioned proximate the laser diodes to control the temperature of the laser diodes during operation. WHUDs that employ such optical engines and laser projectors are also described.

Abstract: A light source device includes: a light emitting element; a heat slinger including a first surface in contact with the light emitting element and a second surface opposite to the first surface; a thermoelectric element including a heat absorbing surface in contact with the second surface and a heat radiating surface opposite to the heat absorbing surface, the thermoelectric element producing a temperature difference upon having current flowing in the thermoelectric element; a heat sink in contact with the heat radiating surface; a frame body that is open in a stacking direction of the light emitting element, the heat slinger, the thermoelectric element, and the heat sink, and supports the light emitting element, the heat slinger, the thermoelectric element, and the heat sink in a stacked state; and a sealing member that is filled in the frame body to cover the heat slinger and the thermoelectric element.

Abstract: A light emitting device for a display including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and having a side surface exposing the active layer, in which a portion of the second conductivity type semiconductor layer and the active layer along an edge of the light emitting structure is insulative in a thickness direction to define an insulation region, and the insulation region includes implanted ions.

Abstract: An optical apparatus includes: a condensing optical part having a focal point; and an optical element that is inserted between the condensing optical part and the focal point and capable of shifting, in a direction perpendicular to an optical axis, the apparent focal point as viewed from a side of the condensing optical part.

Abstract: An optical module includes: a thermoelectric cooler with an upper surface and a lower surface, the lower surface fixed to the first surface of the conductive block, the thermoelectric cooler having a Peltier device therein configured to transfer heat between the upper surface and the lower surface; a metal layer laminated on the upper surface of the thermoelectric cooler; a ground wire connecting the first surface of the conductive block and the metal layer; a photoelectric device adapted to convert an optical signal and an electrical signal at least from one to another; a mounting substrate on which the photoelectric device is mounted, the mounting substrate fixed to the upper surface of the thermoelectric cooler with at least the metal layer interposed therebetween, the mounting substrate having a first wiring pattern electrically connected to the photoelectric device.

Abstract: A laser diode array (102) comprising a plurality of laser diodes (201-210) and a channel (212) proximate to each of the laser diodes (201-210), the channel (212) configured to receive and provide a passage for a flow of a fluid coolant; wherein the laser diodes (201-210) are configured to emit electromagnetic radiation having the same centre wavelength at different respective junction temperatures. A coolant supply system (104) coupled to the laser diode array (102) may cause coolant to flow through the channel (212). A flow rate of the coolant through the channel (212) may be controlled based on temperature measurements of the coolant prior to entering, within, and/or after exiting the laser diode array (102).

Abstract: The relay board includes a first end face opposed to and fixed to the first surface of the conductive block, a second end face opposite to the first end face, and a top and a bottom defining thickness of the relay board. The top has a slope at a position closer to the first end face than the second end face. The slope inclines such that the thickness decreases in a direction from the first end face to the second end face. The conductor layers include a signal pattern on the top with part of the signal pattern disposed on the slope, and a first ground pattern extending from the bottom to each of the first end face and the second end face. The signal wire has one end bonded to the signal lead pin and another end bonded to the signal pattern on the slope.

Abstract: A system for laser enhanced voltage contrast using an optical fiber is provided. The system includes a vacuum chamber with a stage that secures a wafer. A laser light source outside the vacuum chamber directs light to an optical fiber. The optical fiber transmits all wavelengths of light from the laser light source into the vacuum chamber through a wall of the vacuum chamber.

Abstract: In one embodiment, a light detection and range (LIDAR) device includes a light source to emit a light beam to scan a range of orientations associated with a target scanning zone. The LIDAR device further includes a first microelectromechanical system (MEMS) mirror configured to receive and redirect the light beam towards to the target scanning zone. The first MEMs mirror is configured to tilt vertically and horizontally to redirect the light beam in a plurality of angles. The LIDAR device further includes a light detector to receive the light beam reflected from one or more objects located within the target scanning zone. The first MEMS mirror tilts multiple directions with respect to the light source to allow the light source to emit the light beam and the light detector to receive the reflected light beam to obtain multiple angular resolutions of the one or more objects.

Abstract: A circuit conductor is provided on a base. A semiconductor laser is connected to the circuit conductor. Cutout parts on which the circuit conductor is not formed are provided at, for example, the vicinity of the four corners of the base, and a hole is provided at each of the said portions. The holes penetrate the base. Fixing members are inserted through the holes. The fixing members are, for example, male threads. Since the head part of the fixing members is located in the cutout part, the fixing members and the circuit conductor are not in contact with each other. A platform has holes formed at portions corresponding to the holes in the optical unit and female threads formed on the inner surface. The fixing members and the platform are therefore joined. As a result, the optical unit is fixed to the platform.

Abstract: A laser resonator includes a pair of optical elements forming a first optical path having a focused beam waist, one or more mirrors forming a second optical path of approximately parallel light connected to the first optical path, and a laser medium arranged in the second optical path. Induced emission light generated from the laser medium reciprocates or circles in a path formed by the first optical path and the second optical path. A distance between the pair of optical elements is adjustable, and a beam diameter at the second optical path is adjusted by adjusting the distance between the pair of optical elements.

Abstract: A solid state ring laser gyroscope comprises a laser block including a resonant ring cavity having an optical closed loop pathway; a plurality of mirror structures mounted on the block and including respective multilayer mirrors that reflect light beams around the closed loop pathway; and a pump laser assembly in optical communication with the closed loop pathway through one of the mirror structures. One or more of the multilayer mirrors includes a rare-earth doped gain layer operative to produce bidirectional optical amplification of counter-propagating light beams in the closed loop pathway. In some embodiments, the gain layer comprises a rare-earth dopant other than neodymium that is doped into a glassy host material comprising titania, tantalum oxide, alumina, zirconia, silicate glass, phosphate glass, tellurite glass, fluorosilicate glass, or non-oxide glass. Alternatively, the gain layer can comprise a neodymium dopant that is doped into a glassy host material other than silica.

Abstract: A wavelength locker includes a splitter configured to split a portion of light that is output from a light source into a first monitoring light and a second monitoring light; a first periodic filter configured to receive the first monitoring light; a second periodic filter configured to receive the second monitoring light; a first optical receiver configured to monitor an intensity of light that has passed through the first periodic filter; and a second optical receiver configured to monitor an intensity of light that has passed through the second periodic filter, wherein the first periodic filter and the second periodic filter each has a wavelength characteristic in which an intensity of transmitted light changes periodically with respect to a wavelength, and the wavelength characteristic of the first periodic filter and the wavelength characteristic of the second periodic filter shift in opposite wavelength directions when temperature changes.

Abstract: A method of bonding an RE:XAB gain medium to a heat spreader includes using a bonding solution of sodium silicate with concentration of sodium silicate is Na2O at 21.2% and SiO2 at 53% with PH>=11 mixed with nano-pure water in a 1:1 ration. Applying the bonding solution onto either a surface of the RE:XAB or a surface of the heat spreader, aligning the RE:XAB and the heat spreader, applying pressure to draw the surfaces of the RE:XAB gain medium and the heat spreader together thereby uniformly spreading the bonding solution; and then curing the bonding solution.

Abstract: A gain mirror is created for use as an optical amplifier in a solid state ring laser rotation sensor. Such a ring laser includes at least three mirrors for reflecting counter propagating laser beams around a closed loop optical path, wherein at least one of the mirrors is a gain mirror. The gain mirror is formed by applying a thin film of silica, a few half wavelengths thick and doped with Nd isotopes, onto a very high reflectivity mirror and then using a laser diode to pump it with intense light to form a population inversion in Nd3+ ions. An assembly consisting of this gain mirror and a pump laser diode can be used as an optical amplifier in a solid state ring laser to generate the two counter propagating laser light beams needed to measure rotation.

Abstract: Systems, devices and methods are described including providing infrared (IR) laser radiation to a Digital Micromirror Device (DMD) array and using the DMD array to spatially modulate the IR laser radiation. The spatially modulated IR laser radiation may then be projected to form a voxel array where each voxel of the array represents to a volume of air wherein the IR laser radiation has been focused sufficiently to cause air to ionize. The voxel array may then be spatially rotated.

Abstract: Example embodiments relate to a green-light emitting device including a quaternary quantum well on a vicinal c-plane. The light-emitting device includes a substrate having a vicinal c-plane surface and a light-emitting layer on the vicinal c-plane surface of the substrate. The light-emitting layer includes a quantum well layer of AlxInyGa1-x-yN and quantum barrier layers of InzGa1-zN disposed on and under the quantum well layer respectively, and 0<x<1, 0<y<1, and 0<z<1.

Abstract: A laser diode subassembly is disclosed, in which dichroic reflectors are disposed sequentially one after another forming an array or stack, each reflector having a sequential array index. An array of laser diode emitters is provided, each emitter having a sequential array index. Individual reflectors of the array redirect laser sub-beams from individual laser diode emitters having same array indices, to propagate via dichroic reflectors having higher array indices, so as to form a combined optical beam. A common partial reflector may be used for the laser diode emitters instead of individual wavelength selective reflectors for each laser diode emitter.

Abstract: The present invention is intended to provide an electron-beam-pumped light source capable of irradiating one surface of a semiconductor light-emitting device uniformly with an electron beam, and capable of obtaining a high light output without increasing an accelerating voltage of the electron beam and, in addition, capable of efficiently cooling the semiconductor light-emitting device. An electron-beam-pumped light source of the present invention includes: an electron beam source and a semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, and characterized in that the electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, and light exits from a surface through which the electron beam from the electron beam source of the semiconductor light-emitting device enters.

Abstract: A first contact surface of a semiconductor laser chip can be formed to a first target surface roughness and a second contact surface of a carrier mounting can be formed to a second target surface roughness. A first bond preparation layer comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer comprising a second metal can optionally be applied to the formed second contact surface. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.

Abstract: A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, ?lase. Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR). The active zone including a plurality of the DBR optical pairs is configured to provide optical feedback for the SEL at ?lase.

Abstract: A system for vibrating optical components using an airflow device is provided. The system includes: one or more elongated fibers, each of the one or more elongated fibers comprising a respective diameter; one or more optical components for at least one of conveying coherent light and interacting with the coherent light; and, an airflow device arranged to flow air over, and about perpendicular to, the one or more elongated fibers at a velocity, a combination of the respective diameter of each of the one or more elongated fibers and the velocity of the air configured to cause the one or more elongated fibers to produce shedding vortices that cause the one or more elongated fibers and the one or more optical components to each vibrate.

Abstract: A compact, optically-pumped solid-state microchip laser device uses efficient nonlinear intracavity frequency conversion for obtaining low-cost green and blue laser sources. The laser includes a solid-state gain medium, such as Nd:YVO4, and a nonlinear crystal. The nonlinear crystal is formed of periodically poled lithium niobate or periodically poled lithium tantalate, and the crystal is either MgO-doped, ZnO-doped, or stoichiometric to ensure high reliability. The nonlinear crystal provides efficient frequency doubling to translate energy from an infrared pump laser beam into the visible wavelength range. The laser device is assembled in a package having an output aperture for the output beam and being integrated with an optical bench accommodating a laser assembly. The package encloses and provides heat sinking for the semiconductor diode pump laser, the microchip laser cavity assembly, the optical bench platform, and electrical leads.

Abstract: The present invention relates to an optically pumped solid state laser device, comprising a solid state laser medium (300-302) in a laser resonator. Several pump laser diodes (100) are arranged to optically pump said solid state laser medium (300-302) by reflection of pump radiation at a mirror element (200) arranged on the optical axis of the laser resonator. The mirror element (200) is designed to direct said pump radiation to the solid state laser medium (300-302) and to form at the same time one of the resonator mirrors of the laser resonator. With this design of the solid state laser device an easy alignment of the pump optics is achieved. The proposed solid state laser device can be realized in a compact form.

Abstract: A semiconductor laser excitation solid-state laser comprises: a planar waveguide-type solid-state laser element which is disposed on a solid-state laser substrate; an LD array; and a sub-mount substrate on which joining layers of two different thicknesses are formed on the same plane; wherein the planar waveguide-type solid-state laser element is joined to the sub-mount substrate on the surface on the opposite side of a surface on which the solid-state laser substrate is mounted, via a joining layer of one of the thicknesses out of the joining layers of the two different thicknesses, and the LD array is joined to the sub-mount substrate on the surface on a light-emitting layer side, via another joining layer of the other thickness out of the joining layers of the two different thicknesses.

Abstract: The present invention relates to an optically pumped vertical external-cavity surface-emitting laser device comprising at least one VECSEL (200) and several pump laser diodes (300). The pump laser diodes (300) are arranged to optically pump the active region (108) of the VECSEL (200) by reflection of pump radiation (310) at a mirror element (400). The mirror element (400) is arranged on the optical axis (210) of the VECSEL (200) and is designed to concentrate the pump radiation (310) in the active region (108) and to form at the same time the external mirror of the VECSEL (200). The proposed device avoids time consuming adjustment of the pump lasers relative to the active region of the VECSEL and allows a very compact design of the laser device.

Abstract: There is disclosed an apparatus for femtosecond laser optically pumped by a laser diode pumping module that is able to mechanically couple optical mounts for mounting optical mounts to each other by using a bar with a low thermal expansion coefficient and to form a light pumping module distant from a laser platform or a case, to provide a stable mode locking for an ultrashort laser and to enhance a power stability and a beam stability.

Abstract: The invention is an apparatus and method for free space pumping of active double-clad fiber based lasers and amplifiers. The apparatus comprises a laser emitting a signal laser beam; an active double-clad fiber having a core defining an optical axis of the apparatus and a pump cladding defining a cone of numerical aperture; an optical arrangement directing the signal laser beam along the optical axis through the core of the active double-clad fiber; at least one pump source emitting a pump beam; at least one delivery means coupling the pump beam to the pump cladding of the active double-clad fiber; and an optical arrangement coupling the amplified signal laser beam exiting the active double-clad fiber out of the apparatus.

Abstract: A microcrystal laser assembly including a gain-crystal includes a frame having a high thermal conductivity. The frame has a base with two spaced apart portions extending from the base. The gain-crystal has a resonator output minor on one surface thereof. The gain-crystal is supported on the spaced-apart portions of the frame in the space therebetween. Another resonator minor is supported in that space, spaced apart from the output mirror, on a pedestal attached to the base of the frame. The pedestal and the frame have different CTE. Varying the frame temperature varies the spacing between the resonator minors depending on the CTE difference between the pedestal and the frame.

Abstract: An end surface 3b of a solid-state laser element 3 is sloped in such a way that, assuming that laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, an end surface 4a of a wavelength conversion element 4 is sloped in such a way that, assuming that the laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, and the end surface 3b and the end surface 4b are arranged in such a way as to be opposite to each other.

Abstract: A semiconductor distributed Bragg reflector (DBR) including a first multilayer structure including a plurality of first semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers; a second multilayer structure including a plurality of third semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and a protection layer interposed between the first multilayer structure and the second multilayer structure. The second semiconductor layer has a lower decomposition temperature than the first semiconductor layer. The third semiconductor layer has a lower decomposition temperature than the second semiconductor layer.

Abstract: A laser system for an ignition device of an internal combustion engine, in particular of a motor vehicle, having a first laser device and a second laser device situated downstream from the first laser device and optically connected to it, the first laser device being designed for generating pump light for optically pumping the second laser device. The first laser device has a reflecting means in an area which is optically connected to the second laser device, the reflecting arrangement being designed for reflecting radiation generated by the second laser device.

Abstract: An improved high power special filter, system and method. In the system, an optical fiber is disposed inside a ferule channel structure, and the channel structure is aligned with a focusing lens system. The end of the fiber is at a distance D from the channel opening that faces the focusing lens system, and D is determined by the system's numeric aperture factor and the cladding thickness of the optical fiber.

Abstract: Efficient laser diode excited Thulium (Tm) doped solid state systems, directly matched to a combination band pump transition of Carbon Dioxide (CO2), have matured to the point that utilization of such in combination with CO2 admits effectively a laser diode pumped CO2 laser. The laser diode excited Tm solid state pump permits Continuous Wave (CW) or pulsed energy application. Appropriate optical pumping admits catalyzer free near indefinite gas lifetime courtesy of the absence of significant discharge driven dissociation and contamination. As a direct consequence of the preceding arbitrary multi isotopologue CO2, symmetric and asymmetric, gas mixes may be utilized without significant degradation or departure from initial mix specifications. This would admit, at raised pressure, a system continuously tunable from approximately 9 ?m to approximately 11.5 ?m, or sub picosecond amplification.

Abstract: There is disclosed a femtosecond laser apparatus including a first laser material comprising Ng, Np and Nm axes spatially perpendicular to each other; a second laser material comprising Np axis, Nm axis and Ng axis; and a first laser diode and second laser diodes, wherein the traveling direction of laser beams generated from the first and second laser materials is substantially parallel to Ng axis of the first laser material and the polarizing direction of laser beams generated from the first and second laser materials is substantially parallel to Np axis of the first laser material, and the traveling direction of laser beams generated from the first and second laser materials is substantially parallel to Np axis of the second material and the polarizing direction of laser beams generated from the first and second laser materials is substantially parallel to Nm axis of the second laser material.

Abstract: The present invention relates to a method of processing a metal thin film formed on a transparent substrate by radiating pulsed light onto the metal thin film, and having the steps of repeatedly outputting the pulsed light by directly modulating a semiconductor laser of the seed light source in accordance with electric signals, amplifying the pulsed light using an optical amplifier including an optical amplification medium, controlling the full width at half maximum of the pulsed light that is amplified and outputted by the optical amplifier to be 0.5 ns or less, and removing the metal thin film by radiating the pulsed light thus having the controlled full width at half maximum onto the metal thin film through the transparent substrate.

Abstract: A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region.

Abstract: A solid laser apparatus which includes: two reflection elements for forming an oscillator; a plate-shaped gain medium being disposed between the two reflection elements, thereby augmenting a stimulated emission light in a thickness-wise direction; a doughnut- or deformed-doughnut-type planar waveguide being disposed so as to make an inner peripheral face thereof come in contact with an outer peripheral face of the plate-shaped gain medium; and a plurality of excited-light sources being directed in five or more directions, the excited-light sources being coupled to an outer peripheral face of the doughnut- or deformed-doughnut-type planar waveguide so as to make excited lights propagate from the outer peripheral face of the doughnut- or deformed-doughnut-type planar waveguide to the plate-shaped gain medium.

Abstract: An exemplary laser system is disclosed which includes a pump laser diode array and laser gain material, in which the array generates optical radiation having a predetermined total linewidth approximately 20 nm wide constructed from a plurality of individual wavelengths with a linewidth of up to 8 nm, the center wavelength of radiation being for example within the absorption band of laser gain material used at the center point of the operating temperature of the array. The system can include a highly reflecting plane mirror with periodic transmitting patches placed between the laser diode array and the laser gain material, the size of the transmitting patches being such that minimal pump radiation is lost.

Abstract: A semiconductor laser excitation solid-state laser comprises: a planar waveguide-type solid-state laser element which is disposed on a solid-state laser substrate; an LD array; and a sub-mount substrate on which joining layers of two different thicknesses are formed on the same plane; wherein the planar waveguide-type solid-state laser element is joined to the sub-mount substrate on the surface on the opposite side of a surface on which the solid-state laser substrate is mounted, via a joining layer of one of the thicknesses out of the joining layers of the two different thicknesses, and the LD array is joined to the sub-mount substrate on the surface on a light-emitting layer side, via another joining layer of the other thickness out of the joining layers of the two different thicknesses.

Abstract: An extreme ultraviolet light source apparatus comprises a laser apparatus having a master oscillator outputting one or more longitudinal-mode-laser lights, an amplifier with a molecular gas as an amplifying agency amplifying a longitudinal-mode laser light of which wavelength is included in one of amplifiable lines, and a controller adjusting the master oscillator so that the wavelength of the longitudinal-mode laser light outputted from the master oscillator is included in one of the amplifiable lines, the laser apparatus being used as a driver laser, wherein the laser apparatus irradiates a target material with a laser light for generating plasma, and the extreme ultraviolet light is emitted from the plasma and outputted from the extreme ultraviolet light source apparatus.

Abstract: Optical fibers that provide stable output beam sizes have core refractive indices that decrease non-monotonically from a core center to a core/cladding interface. A maximum refractive index of the core is situated at a radius of between about ½ and ¾ of the core radius so that a core center has a depressed refractive index. Such fibers are included in diode pumped solid state lasers to deliver pump laser power to a laser medium.

Abstract: Gain switched laser diode pulses are used as seed pulses for optical pulse generation. ASE is reduced by applying a prebias to the laser diodes at an amplitude less than that associated with a laser diode threshold. An electrical seed pulse having an amplitude larger than that associated with laser threshold is applied within about 10-100 ns of the prebias pulse. The resulting laser diode pulse can be amplified in a pumped, rare earth doped optical fiber, with reduced ASE.

Abstract: Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.