Abstract: A beam shaping optical arrangement combines three incoming laser beams that are mutually laterally offset in two orthogonal directions (X and Y), including an incoming first central laser beam and second and third incoming beams laterally offset in the X direction on either side of the central beam, into one outgoing combined laser beam. The arrangement includes two lateral displacement optical units though which the laterally offset incoming beams are transmitted and that laterally displace the two laterally offset incoming beams along the X direction towards the incoming central beam but which do not laterally offset the incoming central beam.

Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.

Abstract: A device for emission of light is made including an emitting structure including an active part and a micro-cavity, delimited by mirrors and containing the active part, and a laser diode designed for pumping the emitting structure. The emitting structure is fixed to the laser diode. The device is particularly applicable to the detection of gas.

Abstract: Optically-pumped mid-infrared vibrational-rotational transition gas lasers and amplifiers with improved efficiency and practicality. Inventive laser and amplifier devices include: laser active media comprising a mixture of alkali vapor, selected hetero-nuclear molecular gas, and one or more buffer gases; conventional semiconductor laser diode pump sources with nanometer scale spectral bandwidths; and preferential laser emission in ro-vibrational transitions among relatively low-lying vibrational levels.

Abstract: The present invention provides a semiconductor laser device including a heat sink having one main surface, an n-AlGaAs cladding layer disposed on the main surface of the heat sink, an AlGaAs active layer disposed on the n-AlGaAs cladding layer and a p-AlGaAs cladding layer disposed on the AlGaAs active layer. An effective refractive index and a thermal resistance between a main surface on the heat sink side, of the AlGaAs active layer and a main surface on the heat sink side, of the n-AlGaAs cladding layer are respectively set smaller than those between a main surface on the side opposite to the heat sink, of the AlGaAs active layer and a main surface on the side opposite to the heat sink, of the p-AlGaAs cladding layer.

Abstract: Systems, configurations and methods of using laser diodes in ring-shaped arrays placed a distance away from thin disk solid-state laser gain media, which provide uniformly absorbed pump power distribution with high absorption efficiency. This results in major improvements in the scalability and ruggedness of such lasers and disk laser amplifiers. Use of the diode laser pump configurations of the invention results in compact, robust and scalable lasers that produce high quality, high power outputs.

Abstract: A system for generating a powerful laser beam includes a first laser element and at least one additional laser element having a rear laser mirror, an output mirror that is 100% reflective at normal incidence and <5% reflective at an input beam angle, and laser material between the rear laser mirror and the output mirror. The system includes an injector, a reference laser beam source, an amplifier and phase conjugater, and a combiner.

Abstract: A first semiconductor laser element and a second semiconductor laser element are arranged on an identical block, a first electrode of the first semiconductor laser element is in direct contact with the block, and heat radiating effect is high. A second electrode of the second semiconductor laser element is arranged on an insulating dielectric layer, and the block and second semiconductor laser element are electrically insulated. Therefore, irrespective of the material to compose the block, the first semiconductor laser element and the second semiconductor laser element can be independently driven. In addition, the light emitting point distance between the first semiconductor laser element and second semiconductor laser element is limited only by the distance between the electrodes of the respective semiconductor lasers and the positions of light emitting points on the semiconductor laser chip end face and can, therefore, be made as short as possible.

Abstract: A modelocked linear fiber laser cavity with enhanced pulse-width control includes concatenated sections of both polarization-maintaining and non-polarization-maintaining fibers. Apodized fiber Bragg gratings and integrated fiber polarizers are included in the cavity to assist in linearly polarizing the output of the cavity. Very short pulses with a large optical bandwidth are obtained by matching the dispersion value of the fiber Bragg grating to the inverse of the dispersion of the intra-cavity fiber.

Abstract: A laser system is constructed so that a solid-state laser beam emitted from an Nd:YAG laser unit and a laser diode beam emitted from a combining LD which oscillates in a wavelength range shorter than that of the solid-state laser beam are combined by a dichroic beam splitter, the resultant beam is guided to an optical fiber, and a workpiece is irradiated with the combining LD beam and the solid-state laser beam with absolute irradiation positions and irradiation shapes of the beams almost matched each other. Thus, problems of high cost and high power consumption of the laser system due to low energy conversion efficiency, which become problems in a high-output high-luminance solid-state laser unit can be solved.

Abstract: When a piezoelectric element 3 applies an external force to a plastic photonic crystal, the photonic crystal deforms, and accordingly, the photonic band gap easily changes. When the photonic band gap changes, transmission of light with a specific wavelength is limited. Therefore, light with a desired wavelength is outputted from the photonic crystal 2 upon sufficient tuning, and extracted to the outside through an output window 6. In the present invention, a plastic photonic crystal 2 which can achieve sufficient wavelength tuning although it is small is used, and elements are unitized, so that the entire wavelength tunable light source unit is downsized.

Abstract: A semiconductor laser device, comprising a semiconductor laser array for excitation having a plurality of semiconductor laser elements, and an optical resonator having a solid-state laser medium with a reflection mirror formed on one end surface and an output mirror provided in parallel to the reflection mirror, wherein laser beams emitted from the plurality of the semiconductor laser elements enter the optical resonator independently from each other, and the laser beams are respectively amplified and are projected by the optical resonator.

Abstract: A high pulse energy, side pumped laser is provided. The laser has an optical cavity formed between a first and a second reflective surface. A lasing medium is located within the cavity along its optical axis. A plurality of diode bars are provided in optical communication with the lasing medium preferably a lasing rod. The diode bars supply electromagnetic radiation to the lasing rod. The diode bars are configured about the lasing rod so that electromagnetic radiation from the diodes bars propagates through the lasing rod on a plurality of substantially nonintersecting paths. Since the lasing rod is side pumped, the substantially nonintersecting paths traverse the lasing rod substantially perpendicular to the direction of propagation of energy in the laser cavity.

Abstract: A transmitter optical subassembly includes an optical emitter and a fiber receptacle within which an optical fiber is received. An optical limiting element is positioned between the optical emitter and the fiber receptacle. When an optical signal is emitted from the optical emitter, the optical signal passes through the optical limiting element before the optical signal reaches the fiber receptacle and is received by the optical fiber. The optical limiting element has a property such that if the power of the optical signal entering the optical limiting element exceeds a predetermined limit, the power of the optical signal is optically attenuated so that the power of the optical signal exiting the optical limiting element remains below a predetermined limit.

Abstract: A semiconductor laser with a semiconductor body (1), which has a periodic arrangement of cutouts (2) or in which a period arrangement of semiconductor regions is formed, so that the radiation generated by the semiconductor laser is not capable of propagating within this periodic arrangement, the resonator (3) of the semiconductor laser being omitted from the periodic arrangement in the lateral direction. Furthermore, an optically pumped semiconductor device is disclosed with a vertical emitter (13) comprising a quantum well structure (7), which is pumped by means of a semiconductor laser of this type or into which the pump radiation of a pump radiation source is coupled by means of a corresponding waveguide (22).

Abstract: Co-doping the gain medium of a diode-pumped infrared laser to make the laser resistant to long-term degradation from high-intensity internal infrared radiation is disclosed. Co-doping the gain medium with ions such as Cr3+ and Ce3+ that make the gain medium resistant to external ionizing radiation solves problems of long-term degradation of the gain medium.

Abstract: A diode pumped solid state laser for producing a high aspect ratio beam comprises a diode pumping array (1) on a diode array mount (3) and optical means for imaging a pump light beam onto a substantially asymmetrical spot with a smooth intensity profile. The pump light beam is pumping a laser medium (4). Both the pump and the lasing mode have strong asymmetries. In combination with the right choice of laser medium (4), this results in high power laser performance. The axis of the pump light beam is adjustable by a simple adjusting means (110) to a defined plane or direction relative to a mounting frame (111) of a diode array pumping device (103). The adjusting means (110) compensates small tolerances on mounting of the diode array (1) and/or at least one optical element (2). The adjusting means include at least one wedged window (127). Because of this adjustment the axis of the light beam lies in a defined plane relative to the mounting frame (111) of the pumping device (103).

Abstract: A semiconductor laser, such as a vertical cavity, surface emitting laser (VCSEL) is coupled to an optical fiber. The other end of the optical fiber has a reflector, so as to provide a fiber-extended cavity for the VCSEL. Such a construction is useful for providing modal stability to the VCSEL or for forming a mode-locked VCSEL. The optical fiber may be a graded index fiber. In such a case, the fiber length may be selected to have an integral number of quarter pitch lengths. The fiber may be doped with an excitable species and lies within a fiber laser cavity. A semiconductor laser may pump the fiber laser, yielding an emission wavelength beyond the scope of the conventional semiconductor laser.

Abstract: A semiconductor laser device includes a tailored index single mode power amplifier. A high-power laser system can be produced by connecting several of the tailored index single mode power amplifiers in parallel. In an exemplary case, a phase shifting device can be optically coupled to each of the tailored index single mode power amplifiers; the phase shifting devices can be controlled to ensure that the laser beams output by the tailored index single mode power amplifiers are both phase aligned and wavefront matched.

Abstract: An arrangement for optical beam transformation, having at least one light source which can emit at least one light beam, with the at least one light beam having a greater divergence in a first direction (Y) than in a second direction (X) at right angles to it, a collimation means, which can at least reduce the divergence of the at least one light beam in the first direction (Y), an apparatus for optical beam transformation, which is arranged downstream from the collimation means in the propagation direction (Z) of the at least one light beam, with the apparatus being such that the divergence of the at least one light beam passing through the apparatus in the first direction (Y) is interchanged with the divergence in the second direction (X) at right angles to it, and such that the cross-sectional area of the at least one light beam is reduced in the apparatus for optical beam transformation.

Abstract: An optically pumped semiconductor laser device having a substrate (12) having a first main area (14) and a second main area (16), a pump laser (30) and a vertically emitting laser (40) optically pumped by the pump laser (30) being arranged on the first main area (14). The first main area (14) of the substrate (12) is patterned and has first regions (20) situated at a higher level and also second regions (18) situated at a lower level. The pump laser (30) is arranged on a region (20) situated at a higher level of the substrate (12), and the vertically emitting laser (40) is arranged above intermediate layers (50, 30?) on a region (18) situated at a lower level of the substrate (12). The height difference (?) between the first (20) and second (18) regions of the substrate (12) and the layer thickness of the intermediate layers (50, 30?) is chosen in such a way that the pump laser (30) and the vertically emitting laser (40) are situated at the same level.

Abstract: A laser diode module for optical communication is disclosed and includes a plurality of leads, a housing having a vertical wall, a heat sink disposed on the housing, a superlattice microcooler disposed on the heat sink, a laser diode disposed on one side of the superlattice microcooler, a photo diode to convert the received light emitted from the laser diode into current, and a light condensing unit disposed on one side of the heat sink to condense the laser beams emitted from the laser diode.

Abstract: A diode end-pumped solid state laser is provided which produces improved power output, long term stability and improved conversion efficiency from the pumping power, high as well as low power operation while maintaining certain desirable common characteristics such as TEM00 operation, circular outputs, readily aligned systems and compatibility with long lifetime for all components. The invention intracavity conversion to second, third and higher harmonics in several different spectral regimes. The invention also addresses the aspects of design flexibility, seeking in certain embodiments to provide a single platform for providing several harmonic beams.

Abstract: An optical system has a high power diode pump source and a thin disk gain media. An optical coupler is positioned between the diode pump source and the thin disk gain media. The optical coupler produces a beam with a large numerical aperture incident on the thin disk gain media.

Abstract: Systems and methods are provided for achieving high power and high intensity laser amplification. In a four-pass optical amplifying system, a linear polarized optical beam is directed by various optical elements four times through an optical amplifier. The optical amplifier is transversely pumped by a pumping energy source that includes laser diode arrays. The pumping module and the other optical components are provided to counteract thermal lensing effects, induced thermal birefringence effects and to achieve enhanced amplification and efficiencies.

Abstract: A pump fiber is stripped of its cladding over the last section. This can occur by etching a coating off. The sheath is preferably etched off wedge-shaped. As a result thereof, the remaining pump power is eliminated into the environment. How much stray pump light still proceeds via the fiber core to the fiber exit can be monitored over a length of the fiber completely stripped of the protective sheath.

Abstract: Apparatus and method for stabilizing the wavelength of a tunable laser to a target wavelength, by correspondingly adjusting the electrooptical performance of the laser's gain medium, whereby to eliminate the frequency shift due to vibrational factors. The electrooptical performance of the laser's gain medium is adjusted, in the case of an electrically pumped laser, by changing the injection current used to pump the laser; and the electrical performance of the laser's gain medium is adjusted, in the case of an optically pumped laser, by changing the intensity of the pump laser used to energize the laser. The system is implemented with a feedback mechanism.

Abstract: Apparatus for reducing spacing between a plurality of parallel, spaced apart plane-polarized laser-radiation beams delivered by a stack of laser-diode bars includes a ninety degree polarization rotator, and a compound prism including a total reflecting surface an internal polarization-selective surface parallel to each other. The polarization-selective surface is highly transmissive for radiation plane-polarized in one polarization orientation and highly reflective for radiation plane-polarized at ninety degrees to that orientation. The polarization rotator rotates the polarization of a portion of the beams. The beams are transmitted through the compound prism with the portion of polarization-rotated beams following a different path through the prism from that of the beams that are not polarization rotated. The beams exit the prism with spacing therebetween one-half of the spacing between beams entering the prism.

Abstract: Silver paste is applied to a stem, and a semiconductor laser chip is mounted onto the stem on which the silver paste has been applied. Next, the semiconductor laser chip mounted on the stem, while kept pressurized toward the stem with a collet, is heated to make the silver paste temporarily cured, by which the semiconductor laser chip is fixed onto the stem. Then, after a temporary curing step, the silver paste is finally cured within a thermostat. The semiconductor laser device thus manufactured is low in thermal resistance and reduced in variations of operating current and prevented from short-circuiting of the semiconductor laser chip.

Abstract: A plurality of multi-cavity laser diode chips, each having a plurality of light emitting points, are fixed side by side and form a laser diode array.

Abstract: An optically pumped semiconductor laser device having a substrate (1) having a first main area (2) and a second main area (3), with at least one pump laser (11) being arranged on the first main area (2). The semiconductor laser device comprises a vertically emitting laser (4) having a resonator having a first mirror (9) being arranged on the side of the first main area (2) and a second mirror (20) being arranged on the side of the second main area (3) of the substrate (1).

Abstract: A longitudinally pumped laser including one or more active lasing media arranged in an optical laser cavity and at least one pumping device emitting at least one pumping beam toward the at least one active lasing medium. The pumped beam or beams is coupled with the active medium. At least one of the active lasing media includes one or more non-homogeneously doped zones, and the dimension of the doped zones and/or the distribution of the dopants is chosen on the basis of the desired transverse mode of the laser cavity. Such a laser can be used as an amplifier.

Abstract: An aperture 12 for producing an evanescent wave is provided at an n-Au electrode 106. The aperture 12 is directed roughly perpendicularly to a direction in which end faces 104a of an active layer 104 of an optical device oppose to each other, and therefore, laser light generated in the active layer 104 is made incident in the form of the p-polarized light. By the incidence of the p-polarized laser light, an evanescent wave of a comparatively great intensity is obtained from the aperture 12. With this arrangement, an optical device capable of obtaining an evanescent wave of a comparatively great intensity is provided.

Abstract: The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.

Abstract: An organic vertical cavity laser light producing device (10) comprises a substrate (20). A plurality of laser emitters (200) emits laser light in a direction orthogonal to the substrate. Each laser emitter within the plurality of laser emitters has a first lateral mode structure in a first axis orthogonal to the laser light direction and has a second lateral mode structure in a second axis orthogonal to both the laser light direction and the first axis. Each laser emitter comprises a first mirror provided on a top surface of the substrate (20) and is reflective to light over a predetermined range of wavelengths. An organic active region (40) produces laser light (350). A second mirror is provided above the organic active region and is reflective to light over a predetermined range of wavelengths. A pumping means excites the plurality of laser emitters.

Abstract: A multilayer semiconductor laser includes a substrate on which is formed a semiconductor multilayer heterostructure divided into a plurality of electrically pumped regions and an elongated optically pumped region. The electrically pumped regions generate and delivering optical pump radiation laterally into the elongated optically pumped region. Output radiation is generated and delivered by the optically pumped region.

Abstract: Monolithic integrated vertical-cavity surface-emitting laser devices are disclosed including an edge-emitting semiconductor pump laser (PL), an optically-pumped vertical-cavity surface-emitting laser (VCSEL), and a means for deflecting and shaping the output beam of the pump laser to optically excite the VCSEL. The optically-pumped VCSEL structure may be adapted to include a resonant cavity with multiple fixed wavelengths, or a resonance cavity whose wavelength is continuously tunable. Wafer level manufacturing techniques are also disclosed.

Abstract: According to the present invention, there is provided a solid-state laser diode comprising: a laser diode for exciting a solid laser medium; a constant current source for supplying a constant current to the laser diode; voltage measurement unit for measuring a voltage at both ends of the laser diode; and abnormality detection unit for detecting an abnormality at the laser diode based on an output of the voltage measurement unit. Whereby a photodiode need not be arranged on the periphery of the solid laser medium and the laser diode, and an abnormality at the laser diode can be detected without increasing the size of the device and complicating the device and without deteriorating the laser emission efficiency.

Abstract: Optical transmitter equipment and a semiconductor laser device are provided. In one example, optical transmitter equipment includes a semiconductor laser driven by a direct-modulated method. The optical transmitter equipment comprises at least a semiconductor laser, the semiconductor laser having an active layer for laser oscillation and a clad region for optical confinement; an emission device capable of supplying optical energy to the active layer in the semiconductor laser; and a drive circuit for the semiconductor laser. The emission device is configured to supply optical energy corresponding to a bias current in the semiconductor laser to the active layer in the semiconductor laser.

Abstract: A diode-pumped solid-state laser oscillator optically pumps a laser medium. The oscillator has at least one pumping light source that emits light in a predetermined wavelength band, and a laser medium that absorbs light in the wavelength band. In the wavelength band, the optical absorption index of the laser medium increases with an increase in wavelength, and the optical radiation energy of the light source decreases with an increase in wavelength. Thus, with respect to wavelength changes, an increase in the optical absorption index is cancelled out by a decrease in the radiation energy, making the stability of the laser output less dependent on the temperature of the optical pumping medium or laser medium.

Abstract: A high average power, low optical distortion laser gain media is based on a flowing liquid media. A diode laser pumping device with tailored irradiance excites the laser active atom, ion or molecule within the liquid media. A laser active component of the liquid media exhibits energy storage times longer than or comparable to the thermal optical response time of the liquid. A circulation system that provides a closed loop for mixing and circulating the lasing liquid into and out of the optical cavity includes a pump, a diffuser, and a heat exchanger. A liquid flow gain cell includes flow straighteners and flow channel compression.

Abstract: A diode pumped solid state laser using a laser diode bar or a stack of bars with cylindrical lenses is used to end pump a rectangular cross section solid state laser slab. The combination of lenses and polished slab surfaces provides overlap of the pump light with the laser mode combined with sufficient length of material to absorb all of the pump light to produce a compact, efficient laser source.

Abstract: A diode-pumped microlaser in accordance with the present invention includes a diode pump, a first lens, a second lens and a laser glass. The diode pump generates an input pump beam. The first lens and second lens manipulate the pump beam by collimating the pump beam in focal planes that are perpendicular to each other. The laser glass receives the manipulated pump beam from the second lens and converts the pump beam into a laser beam. The laser glass is further doped with predetermined amounts by weight of Erbium and Ytterbium to ensure that an output laser beam with an eyesafe wavelength is generated. The microlaser further includes a passive Q-switch made of a Cobalt-spinel material, which receives the output laser beam and generates laser pulses using passive switching techniques, independent of any external temperature control. This configuration allows the microlaser to function as a laser rangefinder over extended temperature ranges in a manner that is eyesafe to the user.

Abstract: In a method of producing a semiconductor laser apparatus, a conductive die-bonding paste is applied to a bonding surface in a predetermined position thereof and then preheated at a temperature equal to or higher than a temperature at which a diluent of the conductive die-bonding paste starts to transpire, but lower than a temperature at which the conductive die-bonding paste starts a thermosetting reaction. Then, with a semiconductor laser chip placed on the preheated conductive die-bonding paste, the latter is heated to be hardened. In the thus produced semiconductor laser apparatus, a highest position at which the conductive die-bonding paste adheres to end surfaces of the semiconductor laser chip is at a height of more than 0.01 mm from the bonding surface, but is below light-emitting points of the semiconductor laser chip.

Abstract: A vertical cavity surface emitting laser (VCSEL) device with improved power and beam characteristics. The VCSEL device contains one VCSEL or an array of VCSELs. Each VCSEL has a corresponding integrated microlens, and a heat sink is attached to the device side of the VCSEL device. The heat sink allows improved heat dissipation, and therefore provides improved power characteristics of the VCSEL device output laser beam. The microlens or microlens array allows easier and more compact focussing of the VCSEL device output laser beam. The VCSEL device can be used in a variety of optical systems, and its improved power and focusing characteristics provide a compact, low power, low cost laser system.

Abstract: A laser emitting apparatus includes a substrate having on one side an incoherent light-emitting device having a light-emitting layer wherein an electric field is applied across the light-emitting layer to produce light which is transmitted out of the incoherent light-emitting device through an optically transparent layer into a vertical laser cavity structure disposed to receive light transmitted from the incoherent light-emitting device and produce laser light.

Abstract: A solid-state laser device consists of a gain medium in the shape of a polyhedron. A beam enters the gain medium at one surface of the polyhedron and is reflected internally at one or more surfaces with each reflection occurring in approximate the same plane as the plane of incidence of the incident beam. The beam enters and exits the gain medium at different locations. Pump radiation enters the polyhedron through one or more faces. The laser device may be used as the gain medium for a laser oscillator or a laser amplifier. In one variation, the polyhedron contains an internal core section in which there is no gain material. In another variation, the gain medium further includes one or more surfaces oriented to achieve a 90 degree internal reflection of the beam.

Abstract: A device for producing laser radiation having a wavelength of about 2 ?m, the device comprising: a solid-state sample capable of producing lasing transitions corresponding to a wavelength of about 2 ?m; and a source of pumping radiation having a wavelength of about 1 ?m, the source being arranged so that at least some of the radiation produced thereby is absorbed by the solid-state sample, causing the solid-state sample to emit radiation having a wavelength of about 2 ?m.

Abstract: An optically-pumped (OP) multiple quantum well (MQW) active region is disposed in an optical cavity of an OP VCSEL, which generates laser light at a lasing wavelength. The OP VCSEL receives pump light at a first end of the optical cavity. A plurality of quantum well (QW) groups are equally spaced within the active region to correspond in position with antinodes of a standing wave of the lasing wavelength in the optical cavity. The QW groups include a first QW group that is closest to the first end of the optical cavity, and a last QW group that is farthest from the first end of the optical cavity. A plurality of equally thick intermediate absorbing layers are disposed between adjacent QW groups. A last absorbing layer is disposed adjacent to the side of the last QW group farthest away from the first end of the optical cavity. A first absorbing layer is disposed adjacent to the side of the first QW group closest to the first end of the optical cavity.

Abstract: Visible light-emitting-diodes (LEDs) are inexpensive, provide emissions in many wavelengths and are powerful enough to pump solid state laser rods. The LED light is directed to the laser rod (laser gain element). The LED wavelength chosen matches the absorption spectrum of a transition element contained in the laser rod. It is know that the absorption bandwidths of these elements are typically very large. Besides a single LED, an array of LEDs may be used. Either of these arrangements may be imaged on the laser rod or fiber-coupled to the rod. A laser system that is pumped by one or more LEDs provides a low cost, relatively low power laser system. A low cost, higher powered, pulsed laser system is possible by pulsed LED operation. Thus it is possible to exceed the pump power threshold for a given laser by using a relatively small number of LEDs.