Abstract: Gain switched laser diode pulses are used as seed pulses for optical pulse generation. ASE is reduced by applying a prebias to the laser diodes at an amplitude less than that associated with a laser diode threshold. An electrical seed pulse having an amplitude larger than that associated with laser threshold is applied within about 10-100 ns of the prebias pulse. The resulting laser diode pulse can be amplified in a pumped, rare earth doped optical fiber, with reduced ASE.

Abstract: Optical fibers that provide stable output beam sizes have core refractive indices that decrease non-monotonically from a core center to a core/cladding interface. A maximum refractive index of the core is situated at a radius of between about ½ and ¾ of the core radius so that a core center has a depressed refractive index. Such fibers are included in diode pumped solid state lasers to deliver pump laser power to a laser medium.

Abstract: Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.

Abstract: A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets. Multiple applications of the laser material are contemplated in the invention.

Abstract: A solid laser apparatus which includes: two reflection elements for forming an oscillator; a plate-shaped gain medium being disposed between the two reflection elements, thereby augmenting a stimulated emission light in a thickness-wise direction; a doughnut- or deformed-doughnut-type planar waveguide being disposed so as to make an inner peripheral face thereof come in contact with an outer peripheral face of the plate-shaped gain medium; and a plurality of excited-light sources being directed in five or more directions, the excited-light sources being coupled to an outer peripheral face of the doughnut- or deformed-doughnut-type planar waveguide so as to make excited lights propagate from the outer peripheral face of the doughnut- or deformed-doughnut-type planar waveguide to the plate-shaped gain medium.

Abstract: A laser including a semiconductor laser stack group, a beam compositor, a pump beam collimator, a thin-disk laser crystal, a first and a second parabolic reflectors with the same facial contour function, a corrective reflector, an output mirror, and a jet-flow impact cooling system. The thin-disk laser crystal and the output mirror form a laser resonant cavity. The first parabolic reflector, second parabolic reflector, thin-disk laser crystal, and corrective reflector form a multi-pumping focus cavity. The jet-flow impact cooling system is used for cooling the thin-disk laser crystal. The pump light produced by the semiconductor laser stack group is composited by the beam compositor, collimated by the pump light collimator, and enters the multi-pumping focus cavity. Within the multi-pumping focus cavity, the pump light is focused, collimated, and deflected to converge on the thin-disk laser crystal. The laser resonant cavity produces and outputs a laser beam.

Abstract: A wavelength conversion laser light source, including a solid-state laser medium configured to generate fundamental light; a wavelength conversion element configured to convert the fundamental light into second harmonic light which has a higher frequency than the fundamental light; and a conductive material in contact with the wavelength conversion element, wherein the wavelength conversion element includes a polarization inverted structure formed with a polarization inversion region, and a first lateral surface which perpendicularly intersects with the polarization inversion region, and the conductive material is in contact with the first lateral surface.

Abstract: The system and method for modifying the output beam parameters of a plurality of laser diode array sources comprises scalable pump sources for use with diode pumped alkali lasers. The present invention optimizes a diode laser pump source by spectrally-narrowing stacks of diode laser array bars using a single external cavity outfitted with a proprietary step-mirror and cylindrical optical elements. The system and method of the present invention multiplies by one-hundred fold the number of stacks that can be narrowed, vastly increasing the attainable power output by utilizing beam-splitters.

Abstract: A system (100) for generating a millimeter wave signals from heterodyning wavelengths from a multi-wavelength signal generated by a Brillouin-Erbium fiber laser (101). The Brillouin-Erbium fiber laser (101) includes a source laser (105) that transmits a seed signal. An optical directional coupler (110) has a first input that receives the seed signal from the source laser and a first output. An Erbium doped fiber amplifier (115) has an input connected to the first output of the optical directional coupler and an output. The Erbium doped fiber amplifier amplifies the seed signal. A four port circulator (120) has a first port that receives the seed signal from the Erbium doped fiber amplifier. A Brillouin gain medium (135) is connected to a second port and a third port of the circulator.

Abstract: The closed cycle solid state optically pumped gas hybrid (chemical recovery) system utilizes a laser diode excited solid state, fiber or bulk, laser as a pump for a molecular gas, or gas mix, medium. The existence of efficient high power laser diode excited solid state fiber or bulk lasers, output spectrally matched to suitable principle and excited level 1st and 2nd overtones of relevant gases, is the enabling system technology. The utilization of such in combination with suitable gases introduces a range of viable, in principle sourcing on laser diodes and thus effectively laser diode pumped, gas laser systems with access to the approximately 4.5 ?m to approximately 5.4 ?m spectral region. Continuous wave or pulsed operation, with significant energy capability courtesy of solid state storage, is admitted.

Abstract: Methods, structures, devices and systems are disclosed for implementing compact (e.g., nanoscale) coaxial lasers with coaxial cavity geometries which can be used to construct various coaxial cavity lasers that can operate in single mode, at room-temperature, and produce continuous-wave lasing. The described laser systems can also operate at low-temperatures, and provide thresholdless lasing using a spectrally broadband semiconductor gain medium. The cavity of the compact lasers includes a central metal core and a hollow ring surrounding the central metal core, formed within a housing with an open terminal and a closed terminal. The open terminal is positioned to both receive pump light and output laser light, and the closed terminal includes a metal cap that encloses the central metal rod and one side of the hollow ring. The described nano cavities also include a ring-shaped gain medium section, and ring-shaped lower and upper plug sections.

Abstract: When an output instruction is input to a control unit, the control unit controls a seed laser light source and a pumping light source to be either in a pre-pumped state or in an output state. In the pre-pumped state, the pumping light source outputs, for a predetermined period, pumping light with an intensity determined based on the duration of the period of time from when the output state prior to the input of the output instruction to the control unit comes to an end till when the output instruction is input to the control unit. In the output state, to cause the output unit to output laser light, the seed laser light source outputs laser light, and the pumping light source outputs pumping light.

Abstract: In a conventional solid-state laser device, uniformity of an excitation distribution around the axis of a solid-state laser medium is only considered, and symmetry of the excitation distribution in the optical axis direction of the solid-state laser device as a whole is not considered. Therefore, there has been a problem that it is difficult to generate a high-power and high-quality laser beam with high efficiency. In order to solve the problem, in the present invention, excitation modules 51, 52 of an even number is provided, along the optical axis of a solid-state laser beam 18, near the center of a resonator, and semiconductor lasers 21-28 serving as excitation light sources and solid-state laser media 11, 12 provided in the excitation module 51 or in the excitation module 52 are arranged to be symmetrical with respect to a virtual symmetry plane 61 located at a center gap between the excitation modules of the even number.

Abstract: The present invention provides a femtosecond laser apparatus using laser diode optical pumping. To provide a stable mode locking and improve power stability and beam stability in an ultrafast laser such as a femtosecond laser, optical mounts which have mounted thereon optical parts of a diode pumping unit are mechanically engaged using bars of low thermal expansion coefficients and form a pumping module, and the pumping module is maximally separated from a laser platform or case.

Abstract: A diode pumped solid-state laser for high shock, high vibration environments such as those found in laser ignition systems for artillery systems which internally integrate into the breech of an artillery system such as a 155 mm howitzer. The diode pumped solid-state laser employs a unique gain medium mounting which permits its use in such high shock/high vibration environments. Contributing further to robustness is a monolithic design based on diode arrays mounted in a linear configuration along with an advanced polycrystalline gain medium laser rod. Advantageously, and in sharp contrast to laser ignition systems incorporating flash lamps, the diode pumped solid-state laser of the present invention permits a seamless integration into a howitzer artillery weapons system without other complex mounting provisions or shock isolation system(s).

Abstract: A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.

Abstract: A wavelength-tunable light source includes a quantum cascade laser that emits light from a first end and a second end, an optical system that collimates the light emitted from the first end, a first reflecting section on which the light collimated by the optical system is made incident, and a second reflecting section that partially reflects the light emitted from the second end of the quantum cascade laser and transmits the remaining light. The first reflecting section includes a plurality of diffractive gratings whose diffractive properties are different from each other and whose lattice plane directions are variable, and the first reflecting section diffracts a light at a particular wavelength corresponding to the diffractive property and the lattice plane direction of the selected diffractive grating in the direction opposite to the incident direction.

Abstract: An array of optical fibers includes a plurality of optical fibers. Each optical fiber includes a core having a substantially rectangular cross section, and cladding surrounding the core. The cladding includes a pair of substantially parallel flats. The array of optical fibers can be used in combination with a plurality of laser diodes to provide a laser pump whereby an input end of each optical fiber is optically coupled to the output of a respective one of the plurality of laser diodes, and where the output ends of the optical fibers are arranged in an array.

Abstract: Disclosed is a laser apparatus of amplifying a laser pulse output using an anisotropic laser crystal through chirped pulse amplification. The laser apparatus includes a laser resonator. The laser resonator includes a plurality of anisotropic laser crystals, generates a shorter femtosecond pulse by widening a spectrum bandwidth through a combination of different gain spectrum distributions using the anisotropic laser crystals, and allows a laser beam to travel in axial directions with different thermal characteristics of the anisotropic layer crystals in order to reduce a thermal effect.

Abstract: A system and method for reducing the M2 value of a single asymmetric laser emitter while maintaining the power output of the emitter. In some embodiments the brightness of the output of such a system is equivalent to a portioned section of the single laser emitter. A WBC step is performed along a portioned or non-portioned single laser emitter to reduce the M2 value.

Abstract: Strongly confined semiconductor quantum dots theoretically offer for broadband and continuous tunability of their emitting wavelength based upon simply varying the particle size. However, prior art consistently has demonstrated a lower particle size limit below which optical gain cannot be achieved, for example 2.3 nm for CdSe in toluene. As such the prior art points to combinations of alternative materials and host media as the route to achieving the goal of broadband emission sources using quantum dots. However, according to the invention optical gain can be achieved in quantum dots below these previous experimental limits by resonantly pumping the quantum dots to a specific excitonic state, i.e. electron position relative to the quantum dot, such that the multiexcitonic interferences are minimized. Using this approach optical gain in CdSe of R=2.1 nm and 1.5 nm has been demonstrated in the yellow/amber region of the visible spectrum.

Abstract: An exemplary laser system is disclosed which includes a pump laser diode array and laser gain material, in which the array generates optical radiation having a predetermined total linewidth approximately 20 nm wide constructed from a plurality of individual wavelengths with a linewidth of up to 8 nm, the centre wavelength of radiation being for example within the absorption band of laser gain material used at the centre point of the operating temperature of the array. The system can include a highly reflecting plane mirror with periodic transmitting patches placed between the laser diode array and the laser gain material, the size of the transmitting patches being such that minimal pump radiation is lost.

Abstract: A passively Q-switched laser comprises a pump laser diode, a micro laser resonant cavity including a lasing medium and a saturable absorber, a filter and a photodiode. The lasing medium and saturable absorber are bonded together, and dielectric film is coated on the surfaces of the bonded body to form the laser resonant cavity. The filter reflects a portion of the Q-switched laser pulse beam. The photodiode can detect and convert the laser pulse to electric signal for triggering purpose.

Abstract: A semiconductor laser device comprising an optically pumped surface emitting vertical emitter which emits in a vertical main radiation direction, and at least one monolithically integrated pump radiation source for optically pumping the vertical emitter, wherein the pump radiation source emits pump radiation in a pump main radiation direction extending transversely with respect to the vertical main radiation direction. In accordance with the invention, suitably dimensioned vertical sections are provided such that modes of the pump radiation are forced completely or at least partly in a vertical direction from this section to reduce absorption losses of the pump radiation at conductive layers.

Abstract: There is disclosed an apparatus for femtosecond laser optically pumped by a laser diode pumping module that is able to mechanically couple optical mounts for mounting optical mounts to each other by using a bar with a low thermal expansion coefficient and to form a light pumping module distant from a laser platform or a case, to provide a stable mode locking for an ultrashort laser and to enhance a power stability and a beam stability.

Abstract: An array of Surface Emitting Laser (SEL) elements can be used to efficiently pump a disk or rod of solid-state laser glass or crystal, or harmonic-generating crystal. Placing the laser array chip against or near the surface of this solid-state material provides very high and uniform optical power density without the need for lenses or fiber-optics to conduct the light from typical edge-emitting lasers, usually formed in a stack of bars. The lasers can operate in multi-mode output for highest output powers. Photolithography allows for an infinite variety of connection patterns of sub-groups of lasers within the array, allowing for spatial contouring of the optical pumping power across the face of the solid-state material. The solid-state material may be pumped either within (intra-cavity) or externally (extra-cavity) to the SEL laser array.

Abstract: The present invention relates w a wavelength-convertible semiconductor laser which is driven by a pulse, and more specifically, to a wavelength-convertible semiconductor laser, wherein: an expanded resonator is formed by including a laser diode chip on the outside of a pump semiconductor laser diode chip; and an oscillating wavelength of a pump laser is driven by a pulse determined from the outside of the semiconductor laser diode chip by inserting a filter, which is capable of selecting a wavelength, on the inside of said expanded resonator.

Abstract: A laser comprises an end pump light source and a gain medium having a first end, a second end, and four sides comprising a first, a second, a third, and a fourth side. The end pump light source is optically coupled to the first end and pumps the gain medium. The first side and the third side are tapered inwardly from the first end to the first end to the second end at a taper angle ? relative to a longitudinal lasing axis and have a polished finish capable of reflecting light inside the gain medium. The second side and the fourth side are substantially parallel to the longitudinal lasing axis have a ground blasted finish. The first side is also tilted inwardly at a slant angle ? from the fourth side to the second side. A laser beam R0 exits the second end of the gain medium.

Abstract: A surface-emitting semiconductor laser is described, with a semiconductor chip (1), which has a substrate (2), a DBR-mirror (3) applied to the substrate (2) and an epitaxial layer sequence (4) applied to the DBR mirror (3), said layer sequence comprising a radiation-emitting active layer (5), and with an external resonator mirror (9) arranged outside the semiconductor chip (1). The DBR mirror (3) and the substrate (2) are partially transmissive for the radiation (6) emitted by the active layer (5) and the back (14) of the substrate (2) remote from the active layer (5) is reflective to the emitted radiation (6).

Abstract: A VECSEL-type surface-emitting semiconductor laser device is manufactured by providing a first component part (10) comprising a layered first mirror (12), providing a second component part (20) comprising a layered active region (22), permanently joining the second component part to the first component part to form an integral unit, and arranging a second mirror (32) so as to form an optical cavity containing the active region. This method of manufacture enables production at lower cost and enables greater flexibility in the choice of materials for the mirrors and the active region well as for the substrates on which the first mirror and the active region are deposited, as compared to traditional monolithic epitaxy methods. Preferably, the laser device is a IV-VI-type VECSEL emitting in the mid-IR range of the electromagnetic spectrum.

Abstract: An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during operation of the optoelectronic component (1). The emission radiation emerges from the semiconductor body (2) with the semiconductor layer sequence in a lateral direction during operation of the optoelectronic component (1).

Abstract: An optically pumped semiconductor apparatus having a surface-emitting semiconductor body (1) which has a radiation passage area (1a) which faces away from a mounting plane of the semiconductor body (1), and an optical element (7) which is suitable for directing pump radiation (17) onto the radiation passage area (1a) of the semiconductor body (1).

Abstract: A laser including a semiconductor laser stack group, a beam compositor, a pump beam collimator, a thin-disk laser crystal, a first and a second parabolic reflectors with the same facial contour function, a corrective reflector, an output mirror, and a jet-flow impact cooling system. The thin-disk laser crystal and the output mirror form a laser resonant cavity. The first parabolic reflector, second parabolic reflector, thin-disk laser crystal, and corrective reflector form a multi-pumping focus cavity. The jet-flow impact cooling system is used for cooling the thin-disk laser crystal. The pump light produced by the semiconductor laser stack group is composited by the beam compositor, collimated by the pump light collimator, and enters the multi-pumping focus cavity. Within the multi-pumping focus cavity, the pump light is focused, collimated, and deflected to converge on the thin-disk laser crystal. The laser resonant cavity produces and outputs a laser beam.

Abstract: A laser light source device includes a pump light source which emits transverse-multimode light; a plurality of resonator mirrors which define a resonator, at least part of the resonator mirrors outputting light to the outside, where the output light having plural wavelengths; a laser medium arranged in the resonator, the laser medium being pumped with the transverse-multimode light emitted from the pump light source; and a wavelength conversion element arranged in the resonator, the wavelength conversion element being irradiated with a transverse-multimode line beam of fundamental wave obtained by oscillation at the laser medium and outputting a line beam of converted wave.

Abstract: Systems, apparatus, devices and methods for pumping rod shaped solid state lasers with interchangeable arrays of diode laser pump sources that allows for rapid change of the diode laser array pump source without affecting or altering the solid state laser resonator. An embodiment includes a roof top structure having a light scattering reflection roof-top portion, sides with an interior specular reflecting surface and base opposite the top portion. The cavity includes a laser rod within the top portion of the structure positioned between opposing side walls, laser rod optics, and a pump source connected with the base plate to pump the laser rod. The pump cavity can include a mechanism for automating the rapid interchangeability of the pump source.

Abstract: Laser systems and related methods are provided. In this regard, a representative laser system includes: a laser diode array that generates light; a first crystal having a cavity; an optical element operative to focus the generated light onto the first crystal such that the light generates a high-power circulating beam within the cavity; a second crystal positioned with respect to the first crystal such that the frequency of the high-power circulating beam is doubled; and a first coating applied to the first crystal and second coating applied to the second crystal, the first coating and the second coating being operative to cause at least a portion of the beam to be emitted within a particular wavelength range of the generated light.

Abstract: To reduce the laser threshold by efficiently exciting a light-emitting body in a solid-state dye laser with light having high density, thereby facilitating emission of laser beams, and to miniaturize a solid-state dye laser including an excitation light source. A solid-state dye laser capable of emitting laser beams by efficiently introducing light from an excitation light source to a light-emitting body incorporated in an optical resonator structure and exciting the light-emitting body with light with high density, is realized.

Abstract: A side-pumped, diode-pumped solid-state laser cavity includes a conductively cooled housing having an opening for pump radiation from a diode array in close proximity to a laser rod. The pump light is absorbed by the rod and excites the laser ions. The cavity includes a thin, diffuse reflector encircling the rod, having a shaped opening for the collection and redirection of the pump light into the rod, and a good heat conductor as the heat sink and heat conductor. A split heat sink inhibits the flow of heat from the pump diodes into the laser rod, and pre-formed air spacings are designed to provide uniform temperature distribution around the laser rod.

Abstract: In a branched resonator OPS-laser arrangement, a combination of intra-cavity optical parametric generation and intra-cavity frequency conversion provides output radiation in a range between about 550 nanometers about 800 nanometers from an OPS fundamental wavelength in a range between about 900 nm and about 1100 nm.

Abstract: A laser amplifier includes a laser active slab with a source of pump power to amplify an input laser beam, the laser active slab including a block of laser active material having opposed lateral faces defining a wedge lateral dihedral angle, opposed longitudinal faces, and opposed parallel transverse faces, the wedge lateral dihedral angle specified to minimize parasitic amplified spontaneous emission. The source of pump power may be one or more laser diode bars and microlenses producing a gain sheet in the laser active slab. The lateral faces may include optical coatings highly transmitting at a wavelength of the pump power and highly reflecting at a lasing wavelength to provide a folded path for the input laser beam though the gain sheet.

Abstract: A diode-pumped solid state pulsed laser includes an intracavity nonlinear crystal for wavelength conversion by difference frequency mixing and a secondary resonant cavity containing an additional nonlinear crystal for parametric amplification. Primary and secondary cavities are capable of injection seeding and wavelength stabilization resulting in a very narrow, stable, and well defined spectral output. The combination of pump diode pulsing, the implementation of the intracavity parametric oscillator and parametric amplifier results in very efficient operation. Optical fiber coupled parametric oscillator byproduct light allows simple and non-invasive wavelength diagnostics and monitoring upon connection to an optical spectrum analyzer.

Abstract: There is provided a mode locked laser device including: a cavity, the cavity having a semiconductor saturable absorbing mirror and a negative dispersion mirror that controls group velocity dispersion within the cavity, disposed in a straight line; a solid-state laser medium, disposed in the cavity and outputting oscillating light due to excitation light being incident thereon; an excitation unit that causes the excitation light to be incident on the solid-state laser medium; and a cavity holder, the light incident face of the semiconductor saturable absorbing mirror attached to one end of the cavity holder, the negative dispersion mirror attached to the other end of the cavity holder, and the cavity holder integrally supporting the semiconductor saturable absorbing mirror and the negative dispersion mirror.

Abstract: A laser system includes a first laser diode configured to generate first light in a first direction along an optical path; a laser resonator having a gain medium, anisotropic saturable absorber, and a wavelength selective outcoupler positioned in the optical path upon which the first light impinges a first side thereof so as to pump the gain medium (first light from the first laser diode is absorbed in the gain medium), a second laser diode configured to generate second light in a second direction along the optical path toward a second side of the resonator, passes through the wavelength selective outcoupler unimpeded and is absorbed by the saturable absorber element, wherein the second light has a polarization corresponding to the orientation of the saturable absorber; the wavelength selective outcoupler is configured to only allow third light of a predetermined wavelength to have feedback in the laser resonator, achieve gain in the resonator, and be emitted from the laser resonator.

Abstract: An array of Surface Emitting Laser (SEL) elements can be used to efficiently pump a disk or rod of solid-state laser glass or crystal, or harmonic-generating crystal. Placing the laser array chip against or near the surface of this solid-state material provides very high and uniform optical power density without the need for lenses or fiber-optics to conduct the light from typical edge-emitting lasers, usually formed in a stack of bars. The lasers can operate in multi-mode output for highest output powers. Photolithography allows for an infinite variety of connection patterns of sub-groups of lasers within the array, allowing for spatial contouring of the optical pumping power across the face of the solid-state material. The solid-state material may be pumped either within (intra-cavity) or externally (extra-cavity) to the SEL laser array.

Abstract: An optical gain architecture includes a pump source and a pump aperture. The architecture also includes a gain region including a gain element operable to amplify light at a laser wavelength. The gain region is characterized by a first side intersecting an optical path, a second side opposing the first side, a third side adjacent the first and second sides, and a fourth side opposing the third side. The architecture further includes a dichroic section disposed between the pump aperture and the first side of the gain region. The dichroic section is characterized by low reflectance at a pump wavelength and high reflectance at the laser wavelength. The architecture additionally includes a first cladding section proximate to the third side of the gain region and a second cladding section proximate to the fourth side of the gain region.

Abstract: For a diode pumped solid-state laser, measures to improve the pump light absorption in anisotropic crystals are proposed. The proposed measures reduce the dependency of the pump light absorption on the diode current and the diode temperature as well as on the detuning of the pump diode from the absorption line. These measures include sending the pump radiation twice through the crystal, placement of the laser crystal in an orientation that does not exhibit the optimum absorption and the use of a retarder.

Abstract: A diode-laser bar stack includes a plurality of diode-laser bars having different temperature dependent peak-emission wavelengths. The stack is arranged such that the bars can be separately powered. This allows one or more of the bars to be “on” while others are “off”. A switching arrangement is described for selectively turning bars on or off, responsive to a signal representative of the temperature of the diode-laser bar stack, for providing a desired total emission spectrum.

Abstract: A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer.

Abstract: A method of direct diode pumping a fiber laser includes disposing a plurality of diode lasers in a wavelength beam combining cavity for generating a wavelength beam combining laser output, and optically coupling the wavelength beam combining laser output to the gain medium of a fiber laser. The wavelength beam combining cavity may comprise a fast axis wavelength beam combining cavity. Also, the plurality of diode lasers may comprise a multidimensional array of diode lasers arranged as diode laser bars disposed in a stack and spatially interleaved or optically aligned to form an optical stack. Each of the diode lasers may produce a distinct wavelength laser beam.

Abstract: The disclosure discloses a fabry-Perot (F-P) cavity, which is a folded confocal cavity integrally formed by a monolithic optical element, the folded confocal cavity having three reflection surfaces, wherein a first reflection surface is a plane and at the same time serves as an input/output coupling surface, a second reflection surface is a plane, and a third surface is a spherical surface, curvature radius of which is equal to half of a round trip geometric length of light in the folded confocal cavity. The invention further discloses a laser based on the F-P cavity. The solution of the disclosure solves the problems in existing folded F-P cavity, such as unsatisfactory stability, sensitive to outside inferences, bulky and complicated construction.