Abstract: A soaking machine of a single-crystal X-ray structure analysis sample, that makes it possible to surely perform soaking by supplying a sample into a porous complex crystal; and a soaking method therefor, are provided. There is provided is a soaking machine 300 for soaking a sample, comprising a supply section that supplies the sample into an applicator 311 in which a sample holder 310 that holds a porous complex crystal is inserted, a temperature adjustment section 320 that controls a temperature of the applicator 311, a discharge section that carries out the sample from the inside of the applicator 311 in which the sample holder 310 is inserted, and a control section 340 that controls the supply section, the temperature adjustment section 320 and the discharge section.

Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, Soft X-Ray (SXR) illumination over a small illumination spot size with a small physical footprint are presented herein. In one aspect, the focusing optics of an SXR based metrology system project an image of the illumination source onto a specimen under measurement with a demagnification of at least 1.25. In a further aspect, an illumination beam path from the x-ray illumination source to the specimen under measurement is less than 2 meters. In another aspect, SXR based measurements are performed with x-ray radiation in the soft x-ray region (i.e., 80-3000 eV). In some embodiments, SXR based measurements are performed at grazing angles of incidence in a range from near zero degrees to 90 degrees. In some embodiments, the illumination optics project an image of an illumination source onto a specimen under measurement with a demagnification of 50, or less.

Abstract: A system and method for measuring a sample by X-ray reflectance scatterometry. The method may include impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles; and collecting at least a portion of the scattered X-ray beam.

Abstract: Non-destructive inspection methods, systems, and apparatuses are disclosed for non-destructively inspecting a bond line, including a bond line present in a composite substrate and in a adhesive material layers in a composite substrate, with the methods, systems, and apparatuses incorporating a small angle X-ray scattering array.

Abstract: An X-ray apparatus includes a mount, an X-ray source, a detector and a beam limiter. The mount is configured to hold a planar sample. The X-ray source is configured to direct a beam of X-rays toward a first side of the sample. The detector is positioned on a second side of the sample, opposite the first side, so as to receive at least a part of the X-rays that have been transmitted through the sample. The beam limiter is positioned on the first side of the sample so as to intercept the beam of the X-rays. The beam limiter includes first and second blades and first and second actuators. The first and second blades have respective first and second edges positioned in mutual proximity so as to define a slit, through which the beam of the X-rays will pass, at a distance smaller than 25 mm from the first side of the sample. The first and second actuators are configured to shift the first and second blades along respective, first and second translation axes so as to adjust a width of the slit.

Abstract: For anomaly detection based on topogram predication from surface data, a sensor captures the outside surface of a patient. A generative adversarial network (GAN) generates a topogram representing an interior anatomy based on the outside surface of the patient. An X-ray image of the patient is acquired and compared to the generated topogram. By quantifying the difference between the real X-ray image and the predicted one, anatomical anomalies may be detected.

Abstract: A method for X-ray scatterometry includes receiving a first distribution of an X-ray beam scattered from a sample. The first distribution exhibits asymmetry with respect to a reference axis. A correction is applied to the first distribution, so as to produce a second distribution in which a level of the asymmetry is reduced relative to the first distribution. One or more parameters of the sample are estimated based on the second distribution.

Abstract: Disclosed is an X-ray topography apparatus including an X-ray source, a multilayer film mirror, a slit, a two-dimensional X-ray detector, and a sample moving device that sequentially moves the sample to a plurality of step positions. The X-ray source is a minute focal spot. The multilayer film mirror forms monochromatic, collimated, high-intensity X-rays. The direction in which the multilayer film mirror collimates the X-rays coincides with the width direction of the slit. The step size by which the sample is moved is smaller than the width of the slit. The combination of the size of the minute focal spot, the width of the slit, and the intensity of the X-rays that exit out of the multilayer film mirror allows the contrast of an X-ray image produced when the detector receives X-rays for a predetermined period of 1 minute or shorter to be high enough for observation of the X-ray image.

Abstract: When a plate-like sample 20 extracted from a polycrystalline rod is evaluated, peaks can appear in a ?-scanning chart. The smaller the number of such peaks, and the narrower the half-value width of the peak, the more suitable the polycrystalline silicon rod is as a raw material for producing single-crystal silicon. It is preferable that the number of peaks in the ?-scanning chart is, for both the Miller index planes <111> and <220>, equal to or smaller than 24/cm2 when converted into unit per area of the plate-like sample. It is also preferable that the value obtained by multiplying the peak half-value width by ?L=21/2?R0/360, where R0 is the radius of the sample, is defined as an inhomogeneous crystal grain size, and that a polycrystalline silicon rod of which all the inhomogeneous crystal grain sizes are smaller than 0.5 mm is selected as a raw material for producing single-crystal silicon.

Abstract: A method of imaging phases in an inhomogeneous polycrystalline sample having a plurality of crystallites of at least a first crystalline component includes illuminating an illuminated area extending across a surface of a sample with substantially monochromatic X-rays incident at a Bragg-Brentano parafocussing geometry at first angle ?1 to the surface of the sample. X-rays diffracted by the sample at a second angle ?2 pass through a pinhole. The diffraction angle ?1+?2 fulfils a Bragg condition for the first crystalline component which is imaged by a detector to provide a two-dimensional image of the first crystalline component at the surface of the sample.

Abstract: An apparatus for examining the surface of a crystalline sample uses in-plane grazing incidence diffraction with a position-sensitive detector. The x-ray source illuminates an extended region of the sample and, for crystal sections having the appropriate lattice orientation, an elongated diffraction signal is produced. The relative position of the sample and the x-ray beam may then be changed to illuminate different regions of the sample so that the diffraction signal corresponds to these other regions. By scanning across the entire sample, a spatial profile of the sample surface may be generated. The system may be used to locate crystal boundaries, defects, or the presence of attenuating materials on the sample surface.

Abstract: A radiation imaging system includes a radiation imaging cassette and a console device. A communication mode between the cassette and the console device is switchable between a wired mode and a wireless mode. Due to shortage of a battery of the cassette, the communication mode is switched to the wired mode to start charging the battery and send image data from the cassette to the console device through a cable. The console device has first and second judging sections. The first judging section judges whether or not a charge level of the battery exceeds a predetermined threshold value. The second judging section judges whether or not radiography is in progress. If it is judged that the charge level of the battery exceeds the predetermined threshold value and the radiography is not in progress, a window that indicates permission for switching to the wireless mode is displayed on a monitor.

Abstract: The methods of the invention determine the unit cell parameters of a crystalline solid form using diffraction data and applying an algorithm. Using the algorithm, the unit cell parameters may be determined, which may allow one to distinguish between different crystalline solid forms of a substance.

Abstract: Provided is an X-ray topography apparatus capable of separating a desired characteristic X-ray which enters a sample from an X-ray which is radiated from an X-ray source, and increasing an irradiation region of the desired characteristic X-ray. The X-ray topography apparatus includes: the X-ray source for radiating the X-ray from a fine focal point, the X-ray containing a predetermined characteristic X-ray; an optical system including a multilayer mirror with a graded multilayer spacing which corresponds to the predetermined characteristic X-ray, the optical system being configured to cause the X-ray reflected on the multilayer mirror to enter the sample; and an X-ray detector for detecting a diffracted X-ray. The multilayer mirror includes a curved reflective surface having a parabolic cross section, and the fine focal point of the X-ray source is provided onto a focal point of the curved reflective surface.

Abstract: An x-ray topography apparatus in which x-rays diffracted from a sample which is scanned with a linear x-ray are detected by an x-ray detector to obtain a planar diffraction image. In this x-ray topography apparatus, the x-ray detector is an imaging plate shaped as a cylinder and provided with a surface area that is larger than the sample, and the imaging plate is made to undergo ?-rotation about the center axis of the cylindrical shape in coordination with scanning movement of the linear x-rays. The center axis of the cylindrical shape extends in a direction at a right angle with respect to the direction of the scanning movement of the linear x-rays.

Abstract: There is provided an X-ray diffraction apparatus comprising an X-ray topography device for providing a spatial geometric correspondence to an X-ray exiting from a planar region of a sample to detect the X-ray as a planar X-ray topograph, and outputting the X-ray topograph as a signal; a two-dimensional imaging device for receiving a light-image of the planar region of the sample and outputting the light-image as a signal specified by planar positional information; and a video-synthesizing arithmetic control device for generating synthesized video data on the basis of an output signal from the X-ray topograph and an output signal from the imaging device.

Abstract: A calibration technique is provided that utilizes a standard sample that allows for calibration in the wavelengths of interest even when the standard sample may exhibit significant reflectance variations at those wavelengths for subtle variations in the properties of the standard sample. A second sample, a reference sample may have a relatively featureless reflectance spectrum over the same spectral region and is used in combination with the calibration sample to achieve the calibration. In one embodiment the spectral region may include the VUV spectral region.

Abstract: An X-ray diffraction method for the analysis of polycrystalline materials, the method comprising: (a) providing a polycrystalline material for analysis; (b) providing a polychromatic X-ray source, wherein the source produces X-rays by accelerating charged particles to energies of no more than 1 MeV; (c) collimating X-rays from the polychromatic X-ray source into a beam having a divergence in the range of from 10?4 to 10?2 radians; (d) exposing at least a portion of the polycrystalline material to the collimated X-ray beam, whereby the beam is diffracted; (e) collecting at least some of the diffracted X-rays in an energy dispersive X-ray detector or array; and (f) analysing the collected, diffracted X-rays.

Abstract: An x-ray diffraction measurement apparatus for measuring a sample, having an x-ray source and detector coupled together in a combination for coordinated rotation around the sample, such that x-ray diffraction data can be taken at multiple phi angles. The apparatus may provide a pole figure representation of crystal orientation of the sample, wherein the pole figure represents the crystal alignment, and a full width half maximum value is calculated from the pole figure for crystal alignment quantification. Data may be taken at discrete positions along a length of the sample, and the sample is in a fixed position during measuring; or data may be taken continuously along a length of the article, as the sample continuously moves along its length in a movement path between the source and detector. The sample may be in the form of a tape, linearly passing through a measurement zone.

Abstract: Provided is a method of determining a three-dimensional distribution of structural defects in a single crystal material, the method comprising: (a) disposing a single crystal sample on a holder, the sample being set to a symmetric reflection in the Bragg Geometry; (b) projecting a beam of incident x-rays on a predetermined crystal plane in the sample and reflecting the x-rays while the sample is azimuthally rotating with respect to an normal axis, the normal axis being perpendicular to the predetermined crystal plane; (c) obtaining geometrical measured values of a two-dimensional configuration of defects on the detector plane of a CCD detector; and (d) determining the three-dimensional distribution of the defects in the sample by formulating a geometrical relation between a three-dimensional configuration of defects on the sample and the geometrical measured values of the two-dimensional configuration of defects on the detector plane.

Abstract: Sample mounts (10) for mounting microcrystals of biological macromolecules for X-ray crystallography are prepared by using patterned thin polyimide films (12) that have curvature imparted thereto, for example, by being attached to a curved outer surface of a small metal rod (16). The patterned film (12) preferably includes a tip end (24) for holding a crystal. Preferably, a small sample aperture is disposed in the film for reception of the crystal. A second, larger aperture can also be provided that is connected to the sample aperture by a drainage channel, allowing removal of excess liquid and easier manipulation in viscous solutions. The curvature imparted to the film (12) increases the film's rigidity and allows a convenient scoop-like action for retrieving crystals. The polyimide contributes minimally to background and absorption, and can be treated to obtain desired hydrophobicity or hydrophilicity.

Abstract: Provided is a method of determining a three-dimensional distribution of structural defects in a single crystal material, the method comprising: (a) disposing a single crystal sample on a holder, the sample being set to a symmetric reflection in the Bragg Geometry; (b) projecting a beam of incident x-rays on a predetermined crystal plane in the sample and reflecting the x-rays while the sample is azimuthally rotating with respect to an normal axis, the normal axis being perpendicular to the predetermined crystal plane; (c) obtaining geometrical measured values of a two-dimensional configuration of defects on the detector plane of a CCD detector; and (d) determining the three-dimensional distribution of the defects in the sample by formulating a geometrical relation between a three-dimensional configuration of defects on the sample and the geometrical measured values of the two-dimensional configuration of defects on the detector plane.

Abstract: The present invention provides a digital topography imaging system for determining the crystalline structure of a biological macromolecule, wherein the system employs a charge coupled device (CCD) camera with antiblooming circuitry to directly convert x-ray signals to electrical signals without the use of phosphor and measures reflection profiles from the x-ray emitting source after x-rays are passed through a sample. Methods for using said system are also provided.

Abstract: CD-GISAXS achieves reduced measurement times by increasing throughput using longer wavelength radiation (˜12×, for example) such as x-rays in reflective geometry to increase both the collimation acceptance angle of the incident beams and the scattering signal strength, resulting in a substantial combined throughput gain. This wavelength selection and geometry can result in a dramatic reduction in measurement time. Furthermore, the capabilities of the CD-GISAXS can be extended to meet many of the metrology needs of future generations of semiconductor manufacturing and nanostructure characterization, for example.

Abstract: An optic device, system and method for making are described. The optic device includes a first solid phase layer having a first index of refraction with a first photon transmission property and a second solid phase layer having a second index of refraction with a second photon transmission property. The first and second layers are conformal to each other. The optic device may be fabricated by vapor depositing a first layer and then vapor depositing a second layer thereupon. The first layer may be deposited onto a blank or substrate. The blank or substrate may be rotated during deposition. Further, a computer-controlled shutter may be used to alter the deposition rate of material along an axis of the optic device. Alternatively, the optic device may be moved at varying speeds through a vapor stream to alter the deposition rate of material.

Abstract: According to an illustrative embodiment disclosed herein, a semiconductor structure comprising a first crystalline substrate and a second crystalline substrate is provided. The semiconductor structure is irradiated with a radiation. Both the first crystalline substrate and the second crystalline substrate are exposed to the radiation. At least one diffraction pattern of a crystal lattice of the first crystalline substrate and a crystal lattice of the second crystalline substrate is measured. A relative orientation of the crystal lattice of the first crystalline substrate and the crystal lattice of the second crystalline substrate is determined from the at least one diffraction pattern.

Abstract: Sample mounts (10) for mounting microcrystals of biological macromolecules for X-ray crystallography are prepared by using patterned thin polyimide films (12) that have curvature imparted thereto, for example, by being attached to a curved outer surface of a small metal rod (16). The patterned film (12) preferably includes a tapered tip end (24) for holding a crystal. Preferably, a small sample aperture is disposed in the film for reception of the crystal. A second, larger aperture can also be provided that is connected to the sample aperture by a drainage channel, allowing removal of excess liquid and easier manipulation in viscous solutions. The curvature imparted to the film (12) increases the film's rigidity and allows a convenient scoop-like action for retrieving crystals. The polyimide contributes minimally to background and absorption, and can be treated to obtain desired hydrophobicity or hydrophilicity.

Abstract: A method for evaluating an SOI layer on an insulating film disposed on a base substrate so as to construct an SOI substrate, includes: measuring a first diffraction intensity distribution of an X-ray beam corresponding to an incident angle formed with the X-ray beam and a front surface of the SOI substrate by irradiating the X-ray beam onto the base substrate; measuring a second diffraction intensity distribution of the X-ray beam for the incident angle formed with the X-ray beam and the front surface of the SOI substrate by irradiating the X-ray beam onto the SOI layer; determining an evaluation diffraction peak corresponding to the SOI layer from the first and the second diffraction intensity distribution; and observing an X-ray topograph by irradiating the X-ray beam on the SOI layer with a second incident beam angle of the evaluation diffraction peak.

Abstract: An X-ray topographic system comprises an X-ray generator producing a beam of X-rays impinging on a limited area of a sample such as a silicon wafer. A solid state detector is positioned to intercept the beam after transmission through or reflection from the sample. The detector has an array of pixels matching the beam area to produce a digital image of said limited area. Relative stepping motion between the X-ray generator and the sample produces a series of digital images which are combined together. In optional embodiments, an X-ray optic is interposed to produce a parallel beam to avoid image doubling, or the effect of image doubling is removed by software.

Abstract: A method of examining a wafer of crystalline semiconductor material by means of X-rays, in which method a surface of the wafer is scanned by means of an X-ray beam and secondary radiation generated by said X-ray beam is detected. Prior to the examination the surface of the wafer which is to be scanned by the X-ray beam during the examination is glued to a substrate, after which crystalline semiconductor material is removed at the side which is then exposed, removal taking place as far as the top layer which adjoins the surface. The top layer can thus be examined without the examination being affected by crystal defects or impurities present in layers of the wafer which are situated underneath the top layer.

Abstract: A method for quantitatively determining the phase composition of a sample mixture that comprises two or more textured polycrystalline materials, based on corrected and integrated x-ray diffraction intensities. The effect of texture has been analytically eliminated from such corrected and integrated x-ray diffraction intensities, based on the texture information obtained from the sample mixture.

Abstract: A method and apparatus for the transportation, remote and unattended mounting, and visual alignment and monitoring of protein crystals for synchrotron generated x-ray diffraction analysis. The protein samples are maintained at liquid nitrogen temperatures at all times: during shipment, before mounting, mounting, alignment, data acquisition and following removal. The samples must additionally be stably aligned to within a few microns at a point in space. The ability to accurately perform these tasks remotely and automatically leads to a significant increase in sample throughput and reliability for high-volume protein characterization efforts. Since the protein samples are placed in a shipping-compatible layered stack of sample cassettes each holding many samples, a large number of samples can be shipped in a single cryogenic shipping container.

Abstract: An X-ray topographic system comprises an X-ray generator producing a beam of X-rays impinging on a limited area of a sample such as a silicon wafer. A solid state detector is positioned to intercept the beam after transmission through or reflection from the sample. The detector has an array of pixels matching the beam area to produce a digital image of said limited area. Relative stepping motion between the X-ray generator and the sample produces a series of digital images which are combined together. In optional embodiments, an X-ray optic is interposed to produce a parallel beam to avoid image doubling, or the effect of image doubling is removed by software.

Abstract: The matrix protein, M1, of influenza virus strain A/PR/8/34 has been purified from virions and crystallized. The crystals consist of a stable fragment (18 Kd) of the M1 protein. X-ray diffraction studies indicated that the crystals have a space group of P3.sub.t 21 or P3.sub.2 21. Vm calculations showed that there are two monomers in an asymmetric unit. A crystallized N-terminal domain of M1, wherein the N-terminal domain of M1 is crystallized such that the three dimensional structure of the crystallized N-terminal domain of M1 can be determined to a resolution of about 2.1 .ANG. or better, and wherein the three dimensional structure of the uncrystallized N-terminal domain of M1 cannot be determined to a resolution of about 2.1 .ANG. or better. A method of purifying M1 and a method of crystallizing M1. A method of using the three-dimensional crystal structure of M1 to screen for antiviral, influenza virus treating or preventing compounds.

Abstract: A nondestructive method, and associated apparatus, are provided for determining the grain flow of the grains in a convex curved, textured polycrystalline surface. The convex, curved surface of a polycrystalline article is aligned in a horizontal x-ray diffractometer and a monochromatic, converging x-ray beam is directed onto the curved surface of the polycrystalline article so that the converging x-ray beam is diffracted by crystallographic planes of the grains in the polycrystalline article. The diffracted x-ray beam is caused to pass through a set of horizontal, parallel slits to limit the height of the beam and thereafter. The linear intensity of the diffracted x-ray is measured, using a linear position sensitive proportional counter, as a function of position in a direction orthogonal to the counter so as to generate two dimensional data. An image of the grains in the curved surface of the polycrystalline article is provided based on the two-dimensional data.

Abstract: In the manufacture and processing of monocrystalline material, it is important to be able to detect and measure deviations from the ideal crystal structure. Data are required on the density and average extent of impurity precipitations. The irradiation of discrete crystal areas with wave or particle beams, the determination of the intensity distribution of the beams scattered under Bragg conditions, and the determination of static Debye-Waller factors are to be performed automatically and universally, on different specimen thicknesses, with high resolution and flexibility regarding changes in wavelength. For this purpose, a variation of the angle of incidence of the beams on the diffracting lattice planes is performed, and the reflection factor is measured by means of a photon or particle detector, and the integral reflection factor Rint is determined. Pivoting the specimen around an axis which is perpendicular to the diffracting lattice planes leads to a variation of the specimen thickness.

Abstract: A method and apparatus for determining the existence of misorientation in a crystal, comprising irradiating the crystal with X-rays pre-orientating any crystallographic plane of the crystal with respect to the axis of the X-rays, imaging X-rays received from the crystal so as to cause a plurality of effectively angularly-separated images to be formed, the energy of the X-rays being such that while carrying out the method at least some of the X-rays forming the images have intersected the whole depth of the portion of the crystal being examined, and determining the existence of any misorientation from the images.

Abstract: A method of inspecting bonded wafers, which involves obtaining a Lang topograph of bonded wafers as a sample by using a Lang camera, or further treating an image thereon, thereby detecting unbonded regions at the interface of the bonded wafers. In bonding two silicon wafers to each other, an one-side surface of each silicon wafer is finished into a mirror surface and then is cleaned to a sufficient extent. Subsequently, both the mirror surfaces of the two silicon wafers are superposed one upon the other and then the superposed wafers are subjected to high-temperature heat treatment. The high-temperature heat treatment is conducted mainly for the purpose of removing distortions on the bonded surfaces, making the bonding interface monolithic, and, absorbing and diffusing a very small amount of atmospheric gas.

Abstract: An improved asymmetric crystal topography x-ray imaging system employing a ine focus horizontal line source of x-rays and a crystal monochromator used in a compression mode. Relatively large horizontal and vertical dimensions of the monochromating crystal allow imaging of larger areas of imperfect crystals than previously possible, without adversely affecting image resolution. The high resolution two-dimensional images are a direct consequence of our method of controlling the probe beam divergences. An appreciably enhanced and useful intensity of monochromatic x-rays is obtained over that available with prior asymmetric crystal topography systems.

Abstract: A fixture is provided for supporting and aligning small samples of material on a goniometer for X-ray diffraction analysis. A sample-containing capillary is accurately positioned for rotation in the X-ray beam by selectively adjusting the fixture to position the capillary relative to the x and y axes thereof to prevent wobble and position the sample along the z axis or the axis of rotation. By employing the subject fixture relatively small samples of materials can be analyzed in an X-ray diffraction apparatus previously limited to the analysis of much larger samples.