Abstract: The correlation of optical images with SEM images includes acquiring a full optical image of a sample by scanning the sample with an optical inspection sub-system, storing the full optical image, identifying a location of a feature-of-interest present in the full optical image with an additional sources, acquiring an SEM image of a portion of the sample that includes the feature at the identified location with a SEM tool, acquiring an optical image portion at the location identified by the additional source, the image portions including a reference structure, correlating the image portion and the SEM image based on the presence of the feature-of-interest and the reference structure in both the image portions and the SEM image, and transferring a location of the feature-of-interest in the SEM image into the coordinate system of the image portion of the full optical image to form a corrected optical image.

Abstract: Methods and systems for decision tree construction for automatic classification of defects on semiconductor wafers are provided. One method includes creating a decision tree for classification of defects detected on a wafer by altering one or more floating trees in the decision tree. The one or more floating trees are sub-trees that are manipulated as individual units. In addition, the method includes classifying the defects detected on the wafer by applying the decision tree to the defects.

Abstract: A potential trouble can be in advance suppressed by analyzing a defect of a wafer. A defect analyzing apparatus of analyzing a defect of a substrate includes an imaging unit configured to image target substrates; a defect feature value extracting unit configured to extract a defect feature value in a surface of the substrate based on the substrate image; a defect feature value accumulating unit configured to calculate an accumulated defect feature value with respect to the substrates to create an accumulation data AH; a defect determination unit configured to determine whether the accumulated defect feature value exceeds a preset critical value; and an output display unit configured to output a determination result from the defect determination unit.

Abstract: A calculation method of optical proximity correction includes providing at least a feature pattern to a computer system. At least a first template and a second template are defined so that portions of the feature pattern are located in the first template and the rest of the feature pattern is located in the second template. The first template and the second template have a common boundary. Afterwards, a first calculation zone is defined to overlap an entire first template and portions of the feature pattern out of the first template. Edges of the feature pattern within the first calculation zone are then fragmented from the common boundary towards two ends of the feature pattern so as to generate at least two first beginning segments respectively at two sides of the common boundary. Finally, positions of the first beginning segments are adjusted so as to generate first adjusted segments.

Abstract: A measuring apparatus includes an input unit to input optical image data of a figure pattern obtained by a pattern inspection apparatus which inspects a defect of a pattern on a target object to be inspected by scanning an inspection region of the target object, from the pattern inspection apparatus, and to input reference image data generated from design data of the pattern by the pattern inspection apparatus to be compared with the optical image data, from the pattern inspection apparatus, a positional deviation distribution generation unit to generate positional deviation distribution by measuring positional deviation of the pattern on the target object, by using the optical image data and the reference image data input from the pattern inspection apparatus, and an output unit to output generated positional deviation distribution of the pattern on the target object, wherein the measuring apparatus is arranged independently from the pattern inspection apparatus.

Abstract: A measuring apparatus includes an optical image input unit to input optical image data of a figure pattern obtained by a pattern inspection apparatus, which inspects defects of a pattern on a target object to be inspected by scanning an inspection region of the target object, from the pattern inspection apparatus, a design data input unit to input design data of the pattern on the target object, a reference image generation unit to generate reference image data to be compared with the optical image data, by performing image development of the design data, a positional deviation distribution generation unit to generate positional deviation distribution by measuring a positional deviation amount of the pattern on the target object, by using the optical image data obtained from the pattern inspection apparatus and the reference image data having been generated, and an output unit to output generated positional deviation distribution of the pattern.

Abstract: It is an object to obtain an image of a wafer that is suitable for a defect inspection in an efficient manner. It is judged whether or not an average gray level of an image of a wafer W that is an inspection target and that has been imaged by the light receiving part 2 is in the defect detectable range. A control processing part 6a is configured to modify an exposure time in imaging the wafer W and to obtain an image of the wafer W again by the light receiving part 2 in the case in which it is decided that an average gray level of an image of the wafer W is not in a defect detectable range, and an image processing part 6b is configured to carry out a defect inspection based on an image of the wafer W in the case in which it is decided that an average gray level of the image of the wafer W is in the defect detectable range.

Abstract: A first object is to use both ADC (automatic defect classification) and MDC (manual defect classification) and reduce the amount of MDC operation. A second object is to prevent a DOI (defect of interest) from being missed. The first object is achieved by displaying judgment information on a screen. The judgment information is necessary when part of the classification is performed by ADC and part of the classification is performed by MDC and used to judge which classification is used, ADC or MDC. In the display operation, ADC classification results and MDC classification results are also displayed in the form of matrix. Further, a missed DOI rate is calculated for each classification threshold used in the defect classification and displayed on the screen.

Abstract: Certain embodiments enable image-based stimulus for circuit simulations by extracting a waveform from an image and using that waveform to simulate a circuit. Image-processing aspects may include edge-detection processes to identify a boundary of the waveform in the image.

Abstract: An image inspection method of die to database is provided, and the positions in the to-be-inspected chips within one wafer may be selected. In the method, a plurality of inspection areas in a plurality of positions in the to-be-inspected chips within a wafer are selected, a plurality of raw images of the inspection areas are obtained, and a plurality of locations of the raw images are then decoded. After that, an image extraction is performed on the raw images to obtain a plurality of image contours. Thereafter, the image contours are compared with a design database of the chip in order to obtain a result of a defect inspection, and execute the same thing in whole wafer.

Abstract: The present invention provides a contour extraction technique capable of resolving not only spuriousness, duplication, or branches in the contours of a sample pattern, but also discontinuities in the contours. A thinning process is performed with respect to design data for generating a sample pattern, and pattern in/out definition information defining the inside and outside of a pattern formed on a target sample is generated. Then, based on the Marker Controlled Watershed Segmentation method, region segmentation is performed by expanding regions indicated by the pattern in/out definition information while referencing pixel values of an edge-enhanced image of a target sample image, and pattern contours are generated.

Abstract: A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (1), extreme ultraviolet light transmission parts (2, 3), an extreme ultraviolet lithography mask (4), a photon sieve (6) and a collection (7) and analysis (8) system. Point light source beams emitted by the extreme ultraviolet light source (1) are focused on the extreme ultraviolet lithography mask (4) through the extreme ultraviolet light transmission parts (2, 3); the extreme ultraviolet lithography mask (4) emits scattered light and illuminates the photon sieve (6); and the photon sieve (6) forms a dark field image and transmits the same to the collection (7) and analysis (8) system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with a dark field inspection system. The method also includes generating first image data for the wafer using the output and a first cell size and second image data for the wafer using the output and a second cell size. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Abstract: A device and method for measuring a critical dimension of a pattern on a display substrate is disclosed. In one aspect, the device includes a region of interest (ROI) setting unit setting a region of interest in image data, determining whether the region of interest is larger than a reference region, and generating a pattern image based on the region of interest. The device also includes a design file memory storing a plurality of design patterns, a matching unit matching the pattern image to one of design patterns, and a measurement unit measuring the critical dimension of the pattern in the pattern image. The ROI setting unit selects the image data as the pattern image and outputs the pattern image to the matching unit when the region of interest is larger than the reference region.

Abstract: This invention relates to methods and systems for enhance the signal-to-noise ratio of an image scanned by a charged particle beam. In an embodiment, a sequence of grayscales of a pixel is recorded first, extreme values of the sequence of grayscales are then identified and removed, and the remained grayscales are used to determine a nominated grayscale of the pixel.

Abstract: Method for detecting an anomaly on the surface of a tire comprising the following steps in the course of which: A—the image of a given anomaly present on the surface of at least one tire is produced, B—with the aid of a collection of filters, a multivariate image of the said surface is constructed in a space of the filters, in which each pixel is represented in the form of a pixel vector, the components of each pixel vector having a value corresponding to the value of this pixel in the image transformed with the aid of each of the filters of the said collection, C—with the aid of a linear function, this multivariate image is transformed from the space of the filters into a spectral space of given dimension whose variables are the filters or combinations of filters of the said collection, so as to form a spectral image, D—a classifier is constructed by determining, for this anomaly, those zones representative of the spectral space which contain, in a statistically representative manner, the points of the spect

Abstract: A system for location based wafer analysis, the system comprising: (i) a first input interface; (ii) a second input interface; (iii) a correlator; and (iv) a processor, configured to generate inspection results for the inspected wafer, with the help of at least one frame run-time displacement.

Abstract: The present invention is intended to provide a contour extraction method and a contour extraction device with an objective of either suppression of unnecessary contouring processings or selective contouring of necessary portions. To attain the objective, provided are a contour extraction method, and a device, with which contours of pattern edges on an image formed based on charged particles emitted from a sample are extracted and, when contouring of a pattern located in an overlapping region provided in connecting images of plural image-capturing regions to form a synthesized image is performed, either areas of the pattern in the plurality of image-capturing regions, or a pre-set measurement portion is found, and selective contour extraction of the pattern with respect to an image of an image-capturing region is carried out either on a side where the area is large, or on a side where a measurement portion regarding the pattern is located.

Abstract: Aspects of the present invention are related to systems, methods and apparatus for image-based automatic detection of a defective area in a flat panel display and classification of the defect type and the cause of the detected defect.

Abstract: A defect image processing apparatus uses a normalized cross correlation to image-match a layout image (52) acquired from a design data with an image acquired by removing, from a defect image (53), the defect area portions thereof, and displays, as a result of that matching, a layout image and defect image (54) on the display device. In the displayed layout image & defect image (54), not only the layout image, the layer of which is the same as that of the defect image (53), but also a layout image of another layer is displayed superimposed on the defect image (53). This makes it easier to analyze the factor of a systematic defect having occurred due to a positional relationship with another layer.

Abstract: Provide is a process monitoring device in a semiconductor manufacturing apparatus that can readily and reliably monitor the process in the semiconductor manufacturing apparatus. The process monitoring device includes a storage unit that stores a normal state moving image data indicating a normal state of the process; an image capturing unit that captures an image of a state of the process to be monitored to acquire a moving image data; an abnormality level calculation unit configured to extract a feature amount for each frame of the moving image data and the normal state moving image data, and calculate an abnormality level based on the extracted feature amount; and a display unit that displays the abnormality level calculated by the abnormality level calculation unit in association with a frame position of the moving image data.

Abstract: The present invention includes searching imagery data in order to identify one or more patterned regions on a semiconductor wafer, generating one or more virtual Fourier filter (VFF) working areas, acquiring an initial set of imagery data from the VFF working areas, defining VFF training blocks within the identified patterned regions of the VFF working areas utilizing the initial set of imagery data, wherein each VFF training block is defined to encompass a portion of the identified patterned region displaying a selected repeating pattern, calculating an initial spectrum for each VFF training block utilizing the initial set of imagery data from the VFF training blocks, and generating a VFF for each training block by identifying frequencies of the initial spectrum having maxima in the frequency domain, wherein the VFF is configured to null the magnitude of the initial spectrum at the frequencies identified to display spectral maxima.

Abstract: Acquired mask data of a defect portion is sent to a simulated repair circuit 300 to be simulated. The simulation of the acquired mask data 204 is returned to the mask inspection results 205 and thereafter sent to a wafer transfer simulator 400 along with a reference image at the corresponding portion. A wafer transfer image estimated by the wafer transfer simulator 400 is sent to a comparing circuit 301. When it is determined that there is a defect in the comparing circuit 301, the coordinates and the wafer transfer image which is a basis for the defect determination are stored as transfer image inspection results 206. The mask inspection results 205 and the transfer image inspection result 206 are then sent to the review device 500.

Abstract: An analysis system for detection of defects within an inspection image of an inspected object, the inspection image comprising a plurality of pixels, the system including: a computerized segmentation module configured to segmentize the inspection image based on multiple anchor locations and on a mask which defines multiple mask-segments, by assigning each part out of multiple parts of the inspection image to a respective image-segment selected out of a multiple image segments, wherein the multiple image segments correspond to at least one mask-segment of said multiple mask-segments; and a defect detection processor configured to determine a presence of a defect in the inspection image based on the segmentation at least by assessing each pixel out of a plurality of pixels of the inspection image.

Abstract: A recognition method includes: retrieving a component image from an image source; utilizing SVD (singular value decomposition) to decompose the component image; and utilizing the decomposed component image for image recognition. In an embodiment, the recognition method further includes: utilizing a light compensation method to calculate at least one light compensation coefficient; utilizing the light compensation coefficient to process the component image to obtain a light-compensated component image; and utilizing the light-compensated component image for image recognition.

Abstract: Methods and systems for filtering scratches from wafer inspection results are provided. One method includes generating a defect candidate map that includes image data for potential defect candidates as a function of position on the wafer and removing noise from the defect candidate map to generate a filtered defect candidate map. The method also includes determining one or more characteristics of the potential defect candidates based on portions of the filtered defect candidate map corresponding to the potential defect candidates. In addition, the method includes determining if each of the potential defect candidates are scratches based on the one or more characteristics determined for each of the potential defect candidates and separating the potential defect candidates determined to be the scratches from other defects in inspection results for the wafer.

Abstract: Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire at least two images at different imaging configurations from each pattern area of the reticle. A reticle pattern is reconstructed based on each at least two images from each pattern area of the reticle. For each reconstructed reticle pattern, a lithographic process with two or more different process conditions is modeled on such reconstructed reticle pattern to generate two or more corresponding modeled test wafer patterns. Each two or more modelled test wafer patterns is analyzed to identify hot spot patterns of the reticle patterns that are susceptible to the different process conditions altering wafer patterns formed with such hot spot patterns.

Abstract: The present disclosure provides a method including providing a first image and a second image. The first image is of a substrate having a defect and the second image is of a reference substrate. A difference between the first image and the second image is determined. A simulation model is used to generate a simulation curve corresponding to the difference and the substrate dispositioned based on the simulation curve. In another embodiment, the scan of a substrate is used to generate a statistical process control chart.

Abstract: A computerized rating tool is described that assists a user in efficiently and consistently assigning expert ratings (i.e., labels) to a large collection of training images representing samples of a given product. The rating tool provides mechanisms for visualizing the training images in an intuitive and configurable fashion, including clustering and ordering the training images. In some embodiments, the rating tool provides an easy-to-use interface for exploring multiple types of defects represented in the data and efficiently assigning expert ratings. In other embodiments, the computer automatically assigns ratings (i.e., labels) to the individual clusters containing the large collection of digital images representing the samples.

Abstract: A first simulated inspection is conducted to provide a first waveform data set associated with the at least one irregularity parameter. The first simulated inspection is conducted using a first evaluation setting. A first image is produced based on the first waveform set, and it is determined whether a quality of the first image satisfies a predetermined threshold.

Abstract: Methods and systems for detecting defects on a wafer using adaptive local thresholding and color filtering are provided. One method includes determining local statistics of pixels in output for a. wafer generated using an inspection system, determining which of the pixels are outliers based on the local statistics, and comparing the outliers to the pixels surrounding the outliers to identify the outliers that do not belong to a cluster of outliers as defect candidates. The method also includes determining a value for a difference in color between the pixels of the defect candidates and the pixels surrounding the defect candidates. The method further includes identifying the defect candidates that have a value for the difference in color greater than or equal to a predetermined value as nuisance defects and the defect candidates that have a value for the difference in color less than the predetermined value as real defects.

Abstract: Overlay measurement systems and methods are disclosed that control the relative phase between the scattered and specular components of light to amplify weak optical signals before detection. The systems and methods utilize model-based regressional image processing to determine overlay errors accurately even in the presence of inter-pattern interference.

Abstract: The invention relates to a method for the inspection of flat objects, in particular wafers (10, 12, 14, 16, 18, 20, 24, 26, 28, 30), comprising the following steps: recording one digital image of the object surface of several homogeneous objects of a series in each case, wherein each digital image consists of a multiplicity of pixels having an intensity value assigned to the said pixel; and detecting defects on the respective object surface by comparing the recorded image with a reference image; wherein the images of the objects of the whole series are recorded before the comparison with the reference image, and the reference image is generated from several or all images of the series, e.g. by averaging (median) the images of the series.

Abstract: In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S102), then, the CD-SEM image and data in the shrink database are compared with each other (S103), and the shape and dimensions of the pattern before the shrink are estimated and outputted (S104).

Abstract: Methods and systems for generating unbiased wafer defect samples are provided. One method includes selecting the defects detected by each of multiple scans performed on a wafer that have the most diversity in one or more defect attributes such that a diverse set of defects are selected across each scan. In addition, the method may include selecting the defects such that any defect that is selected and is common to two or more of the scans is not selected twice and any defects that are selected are diverse with respect to the common, selected defect. Furthermore, no sampling, binning, or classifying of the defects may be performed prior to selection of the defects such that the sampled defects are unbiased by any sampling, binning, or classifying method.

Abstract: Methods for inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer are provided. One method includes acquiring images for multiple die printed on a wafer, each of which is printed by performing a double patterning lithography process on the wafer and which include two or more die printed at nominal values of overlay for the double patterning lithography process and one or more die printed at modulated values of the overlay; comparing the images acquired for the multiple die printed at the nominal values to the images acquired for the multiple die printed at the modulated values; and detecting defects in the multiple die printed at the modulated values based on results of the comparing step.

Abstract: A method for inspecting a substrate having a plurality of holes formed on a plate-shaped material so as to extend over front and rear surfaces thereof. The method comprises picking-up an image of a plurality of holes formed on the substrate by imaging from one surface side of the substrate and obtaining a hole image of each hole (S103). Then, specifying a reference hole image of the plurality of holes from an imaging result obtained by the image acquisition step (S105). Thereafter, a similarity between each hole image, being the imaging result obtained by the image acquisition step is quantified and the reference hole image, is obtained by pattern matching processing using a specific correlative function (S105 to S107). Finally, a proper/improper hole shape of each of the plurality of holes is judged using a quantification result of each hole image obtained by the quantification step as an index (S108).

Abstract: With respect to an object that strokes a path existing in page description data, the position of a start point of a line element formed along the path is estimated based on a path construction operator and a dotted line pattern determining operator. If the distance between the start point and an end point of the path is equal to or less than a prescribed threshold value, the position of the end point of the path is changed to another position along the path in order to increase the distance.

Abstract: Embodiments of the present invention provide systems and method for adaptively generating a pattern for fabricating semiconductor devices, the method comprising obtaining image data of a surface, and dynamically modifying a pattern to be applied to the surface based on the obtained image data.

Abstract: An inspection system that receives image data corresponding to an image and processes the image data to produce a report corresponding to characteristics of the image. Interface cards receive the image data in a flow, where each interface card receives image data corresponding to a different portion of the image. Process nodes connect to the interface cards, and receive the image data from the interface cards. A host computer is connected to the process nodes, and job managers implemented in the host computer manage the flow of image data to and from the process nodes. The job managers remain operable during a crash of one of the process nodes. Process node programs are implemented in the process nodes, and analyze a portion of the image data and produce the report corresponding to the characteristics of the analyzed portion of the image data. At least one process node program is implemented in each process node. The process node programs rapidly analyze the image.

Abstract: An object of the invention is to provide a pattern measuring device for generating appropriate reference pattern data while suppressing an increase in the manufacturing cost that would occur when manufacturing conditions are finely changed. A pattern measuring device has an arithmetic processing unit for measuring a pattern formed on a sample. The arithmetic processing unit, on the basis of signals obtained with a charged particle beam device, acquires or generates image data or contour line data on a plurality of circuit patterns created under different manufacturing conditions of a manufacturing apparatus, and generates reference data to be used for measurement of a circuit pattern from the image data or contour line data.

Abstract: A method of characterizing a pattern includes determining an image of the contour of the pattern to be characterized with an imagining instrumentation; processing the image, the processing including determining a plurality of points located along the contour and sampled according to a given sampling interval; for each point, identifying a point located on a reference contour and corresponding to the same sampling interval number and determining a dimensionless intermediate coefficient representative of the deviation between the point and the corresponding point on the reference contour; determining a final dimensionless coefficient on the basis of the set of intermediate coefficients corresponding to the plurality of points, the final coefficient being representative of the deviation between the contour of the pattern to be characterized and the reference contour.

Abstract: A system for determining cumulative tow gap width includes an in-process vision system having at least one camera adapted to record images of a composite material and a data analysis computer communicating with and adapted to receive image data from the in-process vision system. The data analysis computer may be adapted to calculate a cumulative gap width of tow gaps in the composite material. A user interface may communicate with and be adapted to receive data analysis results from the data analysis computer. A method for determining cumulative tow width gap of tow gaps in a composite structure is also disclosed.

Abstract: Methods are presented for improved detection of persistent or systematic defects induced during the manufacture of a product. In particular, the methods are directed to the detection of defects induced systematically in the manufacture of photovoltaic cells and modules. Images acquired from a number of samples are combined, enhancing the systematic defects and suppressing random features such as variations in material quality. Once a systematic defect is identified, steps can be taken to locate and rectify its cause.

Abstract: The present invention relates to the acquisition of tilted series images of a minute sample in a short time. The present invention relates to: measuring in advance the relation between an amount of focus shift and a degree of coincidence at the time of acquiring tilted series images; calculating backwards a focus shift from the degree of coincidence on the basis of this relation; correcting the focus shift by controlling a stage, an objective lens, and the like; and thus acquiring the tilted series images. In addition, the present invention relates to: acquiring a reference image in advance at the time of photographing the tilted series images; obtaining the correlation between an acquired image and the reference image; and performing, if the degree of coincidence is equal to or smaller than a set value, processing such as the transmission of a warning message and the stop of an image acquisition sequence.

Abstract: Aspects of the invention relate to yield analysis techniques for generating root cause distribution information. Suspect information for a plurality of failing dies is first generated using a layout-aware diagnosis method. Based on the suspect information, potential root causes for the plurality of failing dies, and suspect feature weights and total feature weights for each of the potential root causes may then be determined. Next, the probability information of observing a particular suspect that is related to a particular root cause may be extracted. Finally, an expectation-maximization analysis may be conducted for generating the root cause distribution information based on the probability information and the suspect information. Heuristic information may be used to prevent the analysis from over-fitting.

Abstract: Improvement of wafer surface inspection sensitivity includes acquiring a first inspection image from the surface of the wafer, generating a reference image by applying a thresholding function to the first image in order to isolate a speckle signal component of the first image induced by wafer surface roughness, acquiring one or more measurement inspection images from the surface of the wafer, and generating a difference image by subtracting the generated one or more reference images from the acquired one or more measurement inspection images.

Abstract: The present invention is detection of a defect signal which is small enough to be buried in a background noise, by a method that includes detecting a defect on a specimen which is detected by another inspection device by using a detection device equipped with an optical microscope, amending positional information of the defect, observing the defect by using an SEM, wherein the detecting the defect is carried out such that forming stationary waves on the specimen by irradiating the specimen with two illumination lights having the same wavelength from the opposite directions on the same incidence plane at the same incidence angle and cause the two illuminating light to interfere; removing scattered components generated by minute irregularities on the specimen surface by a spatial filter, detecting an image formed by the scattered light not removed by the spatial filter; and processing the detected image to detect the defect.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: Removing material from the surface of a first circuit comprises generating a first laser pulse using a pulse generator; targeting a spot on the first circuit using a focusing component; delivering the first laser pulse to the spot on the first circuit, the first circuit including a digital component; ablating material from the spot using the first laser pulse without changing a state of the digital component; testing performance of the first circuit, the testing being performed without reinitializing the circuit between the steps of ablating material and testing performance. Targeting the spot on the first circuit comprises generating a second laser pulse using a pulse generator; delivering a second laser pulse to a sacrificial piece of material; detecting the position of the ablation caused by the second laser pulse with a vision system that forms an image; and using this image to guide the first laser to the spot.