Abstract: A silicon photonic integrated chip and a wavelength division multiplexer that includes at least two polarization control structures and at least one polarization-independent Mach-Zehnder interferometer on a silicon substrate are provided. The polarization control structure includes two input ports and one output port. The Mach-Zehnder interferometer includes two input ports and one optical signal output port for outputting a multiplexed optical signal. The output ports of the polarization control structures are connected to the input ports of the Mach-Zehnder interferometer. The polarization control structures have large bandwidths for increasing an optical bandwidth of the wavelength division multiplexer and reducing an optical loss. A quantity of phase shift arms that require tuning feedback is reduced to lower overall power consumption of the wavelength division multiplexer.

Abstract: An optical-waveguide-clad composition includes a bisphenol type epoxy compound (A), and an epoxy compound (B) containing, in a molecule, at least one of a structure represented by the following formula (1) and a structure represented by the following formula (2), and having a molecular weight of 350 or higher. In the formula (1), R1 and R2 each independently represent a hydrogen atom or an alkyl group, and m represents 2 to 15. In the formula (2), R3 and R4 each independently represent a hydrogen atom or an alkyl group, and n represents 2 to 15.

Abstract: Spot size converter (SSC) in a HAMR magnetic recording head assembly have a plurality of split assist core structures. Each split assist core structure includes multiple assist cores and a main waveguide. Each split core may also include one or more side waveguides such that the main waveguide is sandwiched between the side waveguides and top and bottom assist cores. Adjacent split assist core structures, may share assist cores. The split assist core structures reduce light source power utilized to write data to magnetic media.

Abstract: An article includes an optical transforming layer and a guide region positioned inside and adjacent to at least a portion of a perimeter of the optical transforming layer. The guide region comprises an inlet end positioned adjacent to a first surface of the optical transforming layer and an outlet end positioned adjacent a second surface of the optical transforming layer. The guide region propagates light from the inlet end to the outlet end such that the light is directed from the first surface to the second surface. The guide region includes a phase-separated glass comprising a continuous network phase and a discontinuous phase. A relative difference in index of refraction between the continuous network phase and the discontinuous phase is greater than or equal to 0.3%. The discontinuous phase comprises elongated shaped regions aligned along a common axis and having an aspect ratio greater than or equal to 10:1.

Abstract: A surface emitting laser element formed of a group III nitride semiconductor, comprising: a first clad layer of a first conductivity type; a first guide layer of the first conductivity type having a photonic crystal layer formed on the first clad layer including voids disposed having two-dimensional periodicity in a surface parallel to the layer and a first embedding layer formed on the photonic crystal layer; a second embedding layer formed on the first embedding layer by crystal growth; an active layer formed on the second embedding layer; a second guide layer formed on the active layer; and a second clad layer of a second conductivity type formed on the second guide layer, the second conductivity type being a conductivity type opposite to the first conductivity type. The first embedding layer has a surface including pits disposed at surface positions corresponding to the voids.

Abstract: Provided is a foldable display that is excellent in mass production applicability, and that is resistant to image distortion that can appear in the folding portion after the display is repeatedly folded, and also a mobile device equipped with such a foldable display. The foldable display includes a hard coating film on at least part of the front surface thereof, the hard coating film including a polyester film having an intrinsic viscosity of 0.65 to 1.0 dl/g as a substrate film; a hardened layer formed from a polyimide-based resin, the hardened layer having a thickness of 0.5 to 3.0 ?m; and a hard coating layer, wherein the hardened layer and the hard coating layer are present in this order at least on the front surface side of the substrate film.

Abstract: The present invention realizes an optical signal processing device that enables using a thermal oxidation silica film as the under clad of a silica PLC while also increasing the thickness of the under clad and reducing the time required for film growth during manufacturing. The optical signal processing device is formed as a planar optical circuit that includes an optical waveguide formed on a silicon substrate, and has a phase modulation element that employs a thermo-optical effect. A plurality of silica films are provided between a core of the optical waveguide and the silicon substrate, and at least one of the silica films was formed by thermal oxidation.

Abstract: Embodiments of the present disclosure are directed to low numerical aperture (NA) optical couplers, or spot size converters, that include a lateral taper section and/or a vertical adiabatic taper section. In embodiments, the optical couplers may be positioned on a silicon substrate proximate to V-grooves within the substrate to contain optical fibers to self-align and to couple with the optical couplers. Other embodiments may be described and/or claimed.

Abstract: Embodiments described herein include systems and techniques for converting (i.e., transducing) a quantum-level (e.g., single photon) signal between the three wave forms (i.e., optical, acoustic, and microwave). A suspended crystalline structure is used at the nanometer scale to accomplish the desired behavior of the system as described in detail herein. Transducers that use a common acoustic intermediary transform optical signals to acoustic signals and vice versa as well as microwave signals to acoustic signals and vice versa. Other embodiments described herein include systems and techniques for storing a qubit in phonon memory having an extended coherence time. A suspended crystalline structure with specific geometric design is used at the nanometer scale to accomplish the desired behavior of the system.

Abstract: A photonic buried interposer for converting light between a first optical mode of a first optical component and a second optical mode of a second optical component, the second optical component being larger than the first optical component; the buried interposer comprising a bi-layer taper, the bi-layer taper comprising: a top device layer comprising an upper tapered waveguide; and a bottom device layer comprising a lower tapered waveguide; wherein the upper tapered waveguide extends from a first end for coupling to the first optical component to a second end for coupling to the second optical component; and the lower tapered waveguide starts from an intermediate location between the first and second ends and extends from the intermediate location to the second end.

Abstract: Photonic device, system and methods of making photonic devices and systems, the method including: providing a substrate, forming an insulator layer over the substrate, depositing a plurality of waveguide layers and a plurality of insulator spacers at different vertical levels over the insulator layer, wherein adjacent waveguide layers in the plurality of waveguide layers are isolated by one or more insulator spacers in the plurality of insulator spacers, and forming a plurality of waveguide patterns at the plurality of waveguide layers, wherein at least two waveguide patterns at different vertical levels in the plurality of waveguide patterns are coupled.

Abstract: Structures for an edge coupler and methods of fabricating a structure for an edge coupler. The structure comprises an edge coupler including a first waveguide core and a second waveguide core. The first waveguide core is positioned in a vertical direction between the second waveguide core and a substrate. The first waveguide core has a first longitudinal axis, the second waveguide core has a second longitudinal axis, and the second longitudinal axis of the second waveguide core is slanted at an angle relative to the first longitudinal axis of the first waveguide core.

Abstract: A method including: scanning a sample over a period of time using an electro-magnetic radiation source, the period of time including a first time period and a second time period, a sample portion of the electro-magnetic radiation source being directed to the sample in a sample arm of an optical interferometric system, and a reference portion of the electro-magnetic radiation source being directed to a reference arm of the optical interferometric system; applying, using a phase modulator, a phase shift comprising a first phase shift and a second phase shift to at least one of the reference portion or the sample portion of the electro-magnetic radiation source, the first phase shift being applied during the first time period and the second phase shift being applied during the second time period, the second phase shift having a difference of 90 degrees from the first phase shift; acquiring in-phase data based on a first interference between first backscattered electro-magnetic radiation during the first time per

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

Abstract: An optical waveguide device includes a substrate on which an intermediate layer, a thin-film LN layer of lithium niobate, and a buffer layer are stacked; an optical waveguide formed in the thin-film LN layer; and a plurality of electrodes near the optical waveguide. The intermediate layer and the buffer layer contain a same material of a metal element of any one of group 3 of group 18 of a periodic table of elements.

Abstract: An optical waveguide device has a substrate, an intermediate layer, a thin-film LN layer containing an X-cut lithium niobate, and a buffer layer stacked on the substrate, and an optical waveguide having a ridge shape formed in the thin-film LN layer. The optical waveguide device includes a plurality of electrodes provided, respectively, at a first side and a second side of the optical waveguide. The electrodes are disposed so that respective bottom surfaces thereof are at positions lower than a position of a surface of the buffer layer.

Abstract: The present invention provides a method for fabricating KTP nonlinear racetrack micro-ring resonator, composed of six steps: KTP wafer processing, ion implantation, electron beam exposure, subsequent processing, reactive ion etching and final processing. A thin-film waveguide structure similar to the on-insulator lithium niobate thin-film can be achieved through only one process of ion implantation, which enables significantly simplified procedure, shortened time, and reduced cost. Meanwhile, the KTP micro-ring resonator produced according to the present invention has an optical damage threshold several times higher than the existing lithium niobate micro-ring resonator. It can output nonlinear frequency converted light to the power of milliwatts, and suitable for the case where both the input and output optical signals are pulsed lasers.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.

Abstract: An optical modulator includes a rib; and a slab interconnected to both sides of the rib; wherein the rib is dimensioned relative to the slab to support guiding of a Transverse Magnetic (TM) mode with a main lobe that propagates orthogonal to the slab and with the main lobe substantially excluded from the slab. The rib guides wavelengths in an infrared range in the TM mode. A height of the rib, relative to the slab, is about half of a width of the rib, between the slab.

Abstract: Structures for an optical power splitter and methods of forming a structure for an optical power splitter. The structure includes a first waveguide core having a first arm, a second waveguide core including a second arm, and a third waveguide core having a third arm laterally positioned between the first arm and the second arm. The third arm has a longitudinal axis. The first arm is longitudinally offset from the third arm parallel to the longitudinal axis such that the third arm and the first arm are laterally adjacent over a first overlap distance. The second arm is longitudinally offset from the third arm parallel to the longitudinal axis such that the third arm and the second arm are laterally adjacent over a second overlap distance. The first overlap distance is greater than the second overlap distance to provide an overlap offset.

Abstract: A waveguide component includes a waveguide, which is at least partially transparent or translucent with respect to light and is set up in such a way that light can be conducted at least partially through the waveguide. The waveguide includes a waveguide core, a first casing region, and a second casing region. The waveguide core is formed from one or more spatially separated elements of at least one waveguide core material. The first casing region, which includes at least one electro-optical material, interacts with light guided in the waveguide. The first casing region is disposed around the one or more elements of the waveguide core. The second casing region includes at least one dielectric material. The second casing region is arranged around the first casing region and/or the waveguide core. The waveguide component further includes at least two line regions that are at least partially electrically conductive.

Abstract: Aspects of the present disclosure are directed to process flow to fabricate a waveguide structure with a silicon nitride core having atomic-level smooth sidewalls achieved by wet etching instead of the conventional dry etching process.

Abstract: An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

Abstract: Embodiments may relate to a semiconductor package that includes a die and a package substrate. The package substrate may include one or more cavities that go through the package substrate from a first side of the package substrate that faces the die to a second side of the package substrate opposite the first side. The semiconductor package may further include a waveguide communicatively coupled with the die. The waveguide may extend through one of the one or more cavities such that the waveguide protrudes from the second side of the package substrate. Other embodiments may be described or claimed.

Abstract: A thermal-optical phase shifter includes a substrate layer, a cladding layer, and a beam in the cladding layer. The thermal-optical phase shifter includes a waveguide and a heating element disposed in the beam. The thermal-optical phase shifter includes a thermally conductive structure disposed on the cladding layer to disperse heat from the beam. The thermally conductive structure may include a metal strip disposed longitudinally along the beam, may include thermally conductive pads, and/or may include thermally conductive vias coupled between the cladding layer and the substrate layer. The thermal-optical phase shifter may be incorporated into light detection and ranging (LIDAR) devices, telecommunications devices, and/or computing devices.

Abstract: The invention relates generally to use of a silicon oxynitride film which exhibits desirable physical and chemical properties; superiority in adhesion to metals including noble metals and other metals, transparent conductive oxides, and semiconductor materials compared to silicon dioxide and silicon nitride; is wet-etchable, dry-etchable, or both; and operates as a high-performance overcoat barrier dielectric. The silicon oxynitride film meets performance requirements via a process that does not require an adhesion layer for deposition, and does not contaminate, obscure, or damage the device through incorporation or processing of additional adhesion layers.

Abstract: A method of fabricating an optical connection to at least one planar optical waveguide integrated on a planar integrated circuit (PIC) uses a machine vision system or the like to detect one or more positions at which one or more optical connections are to be made to at least one planar optical waveguide located on the PIC. A spatial light modulator (SLM) is used as a programmable photolithographic mask through which the optical connections are written in a volume of photosensitive material using a photolithographic process. The SLM is programmed to expose the photosensitive material to an illumination pattern that defines the optical connections. The programming is based at least in part on the positions that have been detected by the vision system. The optical connections are printed by exposing the photosensitive material to illumination that is modulated by the pattern with which the SLM is programmed.

Abstract: The material stack of the present disclosure can be used for fabricating optical waveguides that are thin and flexible, and that can bend light around small turns. The stack of materials can include a polymer core and a cladding, which together can create a large difference in refractive index. As a result, light can remain within the core even when bent around radii where standard glass fibers could fail.

Abstract: An optical waveguide apparatus, a control method for the optical waveguide apparatus, and a storage medium are described in the disclosure. In one example implementation, an optical waveguide apparatus includes a control component and a waveguide structure. The waveguide structure includes m input interfaces and n output interfaces, where both m and n are integers greater than 1. The waveguide structure includes a first waveguide layer and a second waveguide layer, where an optical waveguide exists in the second waveguide layer. The control component is configured to control the first waveguide layer to form an optical waveguide, and the optical waveguide and an optical waveguide in the second waveguide layer form a cross-layer optical signal path.

Abstract: Aspects described herein include an optical apparatus comprising a plurality of light-carrying media, a wavelength division multiplexing (WDM) device optically coupled with the plurality of light-carrying media, and a lens arranged between the WDM device and a multicore optical fiber. An arrangement of the plurality of light carrying media and the WDM device are selected to align each of the plurality of light-carrying media with a respective optical core of the multicore optical fiber.

Abstract: A fiber optic assembly includes: a gain fiber configured to output signal light; a first taper configured to expand the signal light output by the gain fiber; and a reversing prism configured to receive counter-pumping light and output the counter-pumping light into the first taper. The first taper is further configured to direct the counter-pumping light towards the gain fiber.

Abstract: Structures for a waveguide bend and methods of fabricating a structure for a waveguide bend. A waveguide core has a first section, a second section, and a waveguide bend connecting the first section with the second section. The waveguide core includes a first side surface extending about an inner radius of the waveguide bend and a second side surface extending about an outer radius of the waveguide bend. A curved strip is arranged over the waveguide bend adjacent to the first side surface or the second side surface.

Abstract: Sub-diffraction endoscopic modal imaging systems and methods are disclosed herein. A single multi-mode fiber endoscope incorporated into a modal imaging system can facilitate the imaging of inner portions of a patient's body at a quantum-limited resolution. One method of sub-diffraction endoscopic modal imaging includes collecting incoming radiation with a multi-mode fiber, separating the output into multiple modes, and measuring an energy level of each mode to construct an image of the received incoming radiation.

Abstract: A semiconductor device is provided. The semiconductor device includes a silicon nitride waveguide in a first dielectric layer over a substrate. The semiconductor device includes a semiconductor waveguide in a second dielectric layer over the first dielectric layer. The first dielectric layer including the silicon nitride waveguide is between the second dielectric layer including the semiconductor waveguide and the substrate.

Abstract: The invention relates to a semiconductor laser comprising a layer structure comprising an active zone, wherein the active zone is configured to generate an electromagnetic radiation, wherein the layer structure comprises a sequence of layers, wherein two opposite end faces are provided in a Z-direction, wherein at least one end face is configured to at least partly couple out the electromagnetic radiation, and wherein the second end face is configured to at least partly reflect the electromagnetic radiation, wherein guide means are provided for forming an optical mode in a mode space between the end faces, wherein means are provided which hinder a formation of an optical mode outside the mode space, in particular modes comprising a propagation direction which do not extend perpendicularly to the end faces.

Abstract: A sensor for isolating, identifying, and quantifying one or more analytes in a sample is provided, the sensor having a metal substrate base and a polymer waveguide disposed on the metal substrate base, the polymer waveguide including an optical channel and a polymer disposed in the optical channel; wherein the polymer waveguide optically couples a first and a second fiber optic cable. Also provided herein are methods of using the sensor for isolating, identifying, and quantifying one or more analytes in a sample, the method including contacting the polymer waveguide with a sample, sequentially heating the sensor to a plurality of temperature thresholds, obtaining an optical output at each temperature threshold, and analyzing differences in sequentially-obtained optical outputs in order to identify and determine concentrations of individual analytes of interest in the sample.

Abstract: Architectures are provided for selectively outputting light for forming images, the light having different wavelengths and being outputted with low levels of crosstalk. In some embodiments, light is incoupled into a waveguide and deflected to propagate in different directions, depending on wavelength. The incoupled light then outcoupled by outcoupling optical elements that outcouple light based on the direction of propagation of the light. In some other embodiments, color filters are between a waveguide and outcoupling elements. The color filters limit the wavelengths of light that interact with and are outcoupled by the outcoupling elements. In yet other embodiments, a different waveguide is provided for each range of wavelengths to be outputted. Incoupling optical elements selectively incouple light of the appropriate range of wavelengths into a corresponding waveguide, from which the light is outcoupled.

Abstract: Architectures are provided for selectively outputting light for forming images, the light having different wavelengths and being outputted with low levels of crosstalk. In some embodiments, light is incoupled into a waveguide and deflected to propagate in different directions, depending on wavelength. The incoupled light then outcoupled by outcoupling optical elements that outcouple light based on the direction of propagation of the light. In some other embodiments, color filters are between a waveguide and outcoupling elements. The color filters limit the wavelengths of light that interact with and are outcoupled by the outcoupling elements. In yet other embodiments, a different waveguide is provided for each range of wavelengths to be outputted. Incoupling optical elements selectively incouple light of the appropriate range of wavelengths into a corresponding waveguide, from which the light is outcoupled.

Abstract: Structures for a waveguide bend and methods of fabricating a structure for a waveguide bend. A waveguide bend is connected to a waveguide core. A slab layer, which is thinner than the waveguide bend, is coupled to the waveguide core and the waveguide bend. The slab layer includes a first curved opening and a second curved opening that is positioned between the first curved opening and a side surface of the waveguide bend. A section of the slab layer is positioned between the first and second curved openings. The first curved opening has a first radius, and the second curved opening has a second radius that is greater than or less than the first radius of the first curved opening.

Abstract: The optical phased array may use a grating based emitter in order to emit light out of the plane of a PIC chip from an array of output waveguides. A longer grating allows for a larger aperture in the output waveguide dimension and allows for a small spot size. However, even for the relatively thick grating layers available in production foundries, the gratings still cause light to decay within less than 0.5 mm. To reduce the grating strength, some or all of the diffraction gratings may only be provided between the output waveguides, e.g. over trenches between the output waveguides, but not over top the output waveguides, whereby the periodicity only interacts with the weaker evanescent tails of the confined mode instead of the entire cross section of the output waveguides. By forming sufficiently narrow slots in the grating layer only down to the upper cladding layer, the diffraction gratings may be made extremely weak.

Abstract: An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

Abstract: An optical device is disclosed, including a phase delay, a first adiabatic coupler adapted to receive an input signal and adapted to be optically coupled to an input of the phase delay, and a second adiabatic coupler adapted to be optically coupled to an output of the phase delay. The second adiabatic coupler includes a first waveguide including a first portion optically coupled to the first output and including a first width, and a second waveguide including a second portion optically coupled to the second output and comprising a second width that is approximately equal to the first width.

Abstract: A package structure including a plurality of first dies and an insulating encapsulant is provided. The plurality of first dies each include a first waveguide layer having a first waveguide path of a bent pattern, wherein the first waveguide layers of the plurality of first dies are optically coupled to each other to form an optical route. The insulating encapsulant encapsulates the plurality of first dies.

Abstract: Architectures are provided for selectively outputting light for forming images, the light having different wavelengths and being outputted with low levels of crosstalk. In some embodiments, light is incoupled into a waveguide and deflected to propagate in different directions, depending on wavelength. The incoupled light then outcoupled by outcoupling optical elements that outcouple light based on the direction of propagation of the light. In some other embodiments, color filters are between a waveguide and outcoupling elements. The color filters limit the wavelengths of light that interact with and are outcoupled by the outcoupling elements. In yet other embodiments, a different waveguide is provided for each range of wavelengths to be outputted. Incoupling optical elements selectively incouple light of the appropriate range of wavelengths into a corresponding waveguide, from which the light is outcoupled.

Abstract: A Mach-Zehnder optical modulator includes: a Mach-Zehnder interferometer that includes first and second arms formed on a silicon substrate, and a controller that controls bias current of the first and second arms. The controller controls the bias current of the first and second arms respectively to be a first offset value. The controller repeatedly executes a current adjustment process to increase the bias current of the first arm until a gradient of a phase shift amount of the first arm with respect to the bias current of the first arm reaches a target value. The controller controls the bias current of the second arm to be a second offset value that is smaller than the first offset value. The controller repeatedly performs the current adjustment process to increase the bias current of the first arm until a phase difference of the Mach-Zehnder interferometer reaches a target phase difference.

Abstract: Architectures are provided for selectively outputting light for forming images, the light having different wavelengths and being outputted with low levels of crosstalk. In some embodiments, light is incoupled into a waveguide and deflected to propagate in different directions, depending on wavelength. The incoupled light then outcoupled by outcoupling optical elements that outcouple light based on the direction of propagation of the light. In some other embodiments, color filters are between a waveguide and outcoupling elements. The color filters limit the wavelengths of light that interact with and are outcoupled by the outcoupling elements. In yet other embodiments, a different waveguide is provided for each range of wavelengths to be outputted. Incoupling optical elements selectively incouple light of the appropriate range of wavelengths into a corresponding waveguide, from which the light is outcoupled.

Abstract: An optical modulator includes a dielectric layer and a waveguide. The waveguide is disposed on the dielectric layer. The waveguide has a first region, a second region, and an optical coupling region between the first region and the second region. The waveguide located in the first region includes a first electrical coupling portion and a first slab portion connected to each other. The waveguide located in the second region includes a second electrical coupling portion and a second slab portion connected to each other. The waveguide located in the optical coupling region includes a first optical coupling portion and a second optical coupling portion. The first slab portion has at least two sub-portions having different heights. The second slab portion has at least two sub-portions having different heights.

Abstract: A wavelength selective switching device comprises a plurality of input paths for receiving optical signals, a plurality of output paths for emitting the optical signals, and a switching unit for selectively directing the optical signals from the input paths to the output paths. The switching unit comprises a reflective area adapted to be concurrently illuminated by a first optical signal from a first input path among the plurality of input paths, and by a second optical signal from a second input path among the plurality of input paths, the second input path being different from the first input path, and to concurrently direct the first optical signal to a first output path among the plurality of output paths and the second optical signal to a second output path among the plurality of output paths, the second output path being different from the first output path. Said first output path and said second output path are spatially separated by said first input path and said second input path, or vice-versa.

Abstract: Among other aspects, various embodiments include encoding wavelength-based characteristics, in addition to three-dimensional positions, of a plurality of objects of a plurality of different wavelengths directly in an image of the objects.

Abstract: A mode-matched waveguide Y-junction with balanced or unbalanced splitting comprises an input waveguide, expanding from an input end to an output end, for expanding the input beam of light along a longitudinal axis; first and second output waveguides extending from the output end of the input waveguide separated by a gap. Ideally, each of the first and second output waveguides includes an initial section capable of supporting a fundamental super mode, and having an inner wall substantially parallel to the longitudinal axis, and a mode splitting section extending from the initial section at an acute angle to the longitudinal axis.