Abstract: An example of a resin composition includes a free radical curable resin matrix including an acrylate and a siloxane, and a free radical photoinitiator. When cured, the resin composition has low or no autofluorescence when exposed to blue excitation wavelengths ranging from about 380 nm to about 480 nm or green excitation wavelengths ranging from about 510 nm to about 560 nm.

Abstract: A diffractive optical waveguide and a display apparatus are disclosed. A coupling-out grating includes a first grating having a first, second, and third grating vectors, directions of the second and third grating vectors, being respectively towards both sides of a direction of first grating vector, form acute angles with it, a cross-section profile of an optical unit structure of the first grating has a first, second, third, and fourth vertices, a straight line passing through the first and second vertices and a straight line passing through the third and fourth vertices are perpendicular to the direction, a straight line passing through the first and fourth vertices and a straight line passing through the second and third vertices respectively form angles ?1 and ?2 having a same sign with the direction, wherein 15°?|?1|?45° and 15°?|?2?45°.

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

Abstract: A semiconductor structure and a fabrication method are provided. The semiconductor structure includes: a base substrate, an optical waveguide layer over the base substrate; a first dielectric layer over the base substrate; a cavity between the first dielectric layer and the optical waveguide layer; and a second dielectric layer on the first dielectric layer and the optical waveguide layer. The cavity is located on sidewall surfaces of the optical waveguide layer and has a bottom coplanar with a bottom of the optical waveguide layer. The second dielectric layer is located on a top of the cavity and seals the cavity.

Abstract: Structures for a wavelength splitter used in a wavelength-division-multiplexing filter stage and methods of forming same. The structure comprises a first waveguide core including a first section, a second section, and a phase delay line between the first section and the second section. The phase delay line of the first waveguide core includes a delay section and a plurality of segments longitudinally arranged in the delay section. The structure further comprises a second waveguide core including a first section, a second section, and a phase delay line between the first section and the second section. The first section of the second waveguide core is positioned adjacent to the first section of the first waveguide core to define a first directional coupler, and the second section of the second waveguide core is positioned adjacent to the second section of the first waveguide core to define a second directional coupler.

Abstract: An optical interconnect structure including a base substrate, an optical waveguide, a first reflector, a second reflector, a dielectric layer, a first lens, and a second lens is provided. The optical waveguide is embedded in the base substrate. The optical waveguide includes a first end portion and a second end portion opposite to the first end portion. The first reflector is disposed between the base substrate and the first end portion of the optical waveguide. The second reflector is disposed between the base substrate and the second end portion of the optical waveguide. The dielectric layer covers the base substrate and the optical waveguide. The first lens is disposed on the dielectric layer and located above the first end portion of the optical waveguide. The second lens is disposed on the dielectric layer and located above the second end portion of the optical waveguide.

Abstract: An optoelectronic structure includes a substrate, an electronic die and a photonic die. The electronic die is disposed on the substrate and includes a first surface, wherein the first surface is configured to support an optical component. The photonic die is disposed on the first surface of the electronic die and has an active surface toward the first surface of the electronic die and a side surface facing the optical component.

Abstract: An optical device including a waveguide and an electrode is described. The waveguide includes at least one optical material having an electro-optic effect. The electrode includes a channel region and extensions protruding from the channel region. The extensions are closer to a portion of the waveguide than the channel region is.

Abstract: The present invention provides an optical coupler comprising: a first optical prong; a second optical prong; an optical waveguide with which the first optical prong and the second optical prong merge; wherein: a distance from an axially outer tip edge of the first optical prong to an axially outer tip edge of the first optical prong is greater than a planar width of the optical waveguide; and the first optical prong and the second optical prong are each tapered from the optical waveguide.

Abstract: A protected synthetic tensile member assembly including one or more fixed terminations used to transmit a tensile load from the tensile member to an external component. The tensile member includes access for inspection of its constituent fibers in at least one selected inspection region. The region is selected on the basis of the area of interest to the tensile member's use—such as the area of greatest stress concentration, the area of greatest abrasion, or an area of likely strand-to strand or overall cable translation. A removable cover is provided for the inspection region. A user may selectively remove this cover in order to gain access to the inspection region.

Abstract: A grating coupled laser (GCL) includes an active section and a passive section. The passive section is butt coupled to the active section to form a butt joint with the active section. The active section includes an active waveguide. The passive section includes a passive waveguide, a transmit grating coupler, and a top cladding. The passive waveguide is optically coupled end to end with the active waveguide and includes a first portion and a second portion. The first portion of the passive waveguide is positioned between the second portion of the passive waveguide and the active waveguide. The transmit grating coupler is optically coupled to the passive waveguide and includes grating teeth that extend upward from the second portion of the passive waveguide. The top cladding is positioned directly above the first portion of the passive waveguide and is absent directly above at least some of the transmit grating coupler.

Abstract: An optical splitter includes a silicon-on-insulator substrate having a cladding layer. The optical splitter also includes a first waveguide of a first width and a first length buried in the cladding layer and a second waveguide of a second width and a second length buried in the cladding layer disposed in close proximity of the first waveguide by a gap distance. A ratio of the second width over the first width is configured to be smaller than 1 while the first length, the second length, and the gap distance are configured to allow evanescent coupling of a first confined mode of an optical signal in the first waveguide into the second waveguide with a certain splitting ratio being achieved in a range of 1% to <50% substantially unchanged over a broadband of wavelengths.

Abstract: An optical device comprises a substrate, a waveguide disposed on the substrate, and a spot size converter (SSC) disposed on the substrate. The waveguide comprises a shoulder and a ridge. The SSC comprises a shoulder and a ridge. The ridge of the waveguide is aligned to a first stage of the ridge of the SSC. The waveguide is made of a first material. The shoulder and the ridge of the SSC are made of a second material. The second material is different from the first material.

Abstract: Provided is a phase shift mask blank including a substrate, and a phase shift film thereon, the phase shift film composed of a material containing silicon and nitrogen and free of a transition metal, the phase shift film including at least one compositionally graded layer having a composition continuously varying in a thickness direction, and a refractive index n and an extinction coefficient k, with respect to exposure light, varying in the thickness direction, the exposure light being KrF excimer laser, the compositionally graded layer having a difference between a maximum refractive index n(H) and a minimum refractive index n(L) of up to 0.40, and a difference between a maximum extinction coefficient k(H) and a minimum extinction coefficient k(L) of up to 1.5.

Abstract: A plurality of fibers may be included in an electronic device display to allow the display to have a curved output surface. Each fiber may guide light from one or more display pixels on the display panel to a display output surface. The fibers may be bent, allowing light from the display pixels to be displayed on a three-dimensional display output surface of any desired shape. The fibers may be formed from a high refractive index core surrounded by a cladding. The fibers may be formed from an activated photoactive material. The fibers may cover the entire display panel, the periphery of the display panel, or the corners of the display panel. The display panel may have one or more bends. Polarizing fibers may be used to both guide light from the display panel and serve as a linear polarizer for the display.

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

Abstract: Systems and methods for an integrated photonics vertical coupler are provided herein. In certain embodiments, a device includes a first waveguide having a first photon and a second photon propagating therein, wherein the first photon and the second photon are propagating in orthogonal modes. Further, the device includes a second waveguide having a second coupling portion in close proximity with a first coupling portion of the first waveguide, wherein a physical relationship between the first waveguide and the second waveguide along the length of the second coupling portion causes an adiabatic transfer of the first photon and the second photon into distinct orthogonal modes of the second waveguide at different locations in the second coupling portion.

Abstract: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.

Abstract: An optical device includes an optical modulator on an optical IC chip. The optical modulator includes an optical waveguide, first and second wiring patterns that are formed along the optical waveguide and a polymer pattern. A portion of the polymer pattern is formed on the optical waveguide and located in a region between the first and second wiring patterns. Each of the first and second wiring patterns includes a modulation portion that is formed parallel to the optical waveguide, a pad portion, and a transition portion that connects the modulation portion and the pad portion. A shape of a region between the transition portion of the first wiring pattern and the transition portion of the second wiring pattern is a curve. The polymer pattern has a curved portion in the region between the transition portion of the first wiring pattern and the transition portion of the second wiring pattern.

Abstract: A display device is provided, including a first flexible substrate, a second flexible substrate, a TFT circuit, and a liquid-crystal layer. The TFT circuit is formed on the first flexible substrate. The liquid-crystal layer is sealed between the first flexible substrate and the second flexible substrate. The first flexible substrate has a first light transmission chromaticity coordinates (x1, y1), and the second flexible substrate has a second light transmission chromaticity coordinates (x2, y2), wherein x1-x2?0.002 or y1-y2?0.002.

Abstract: An optical modulator includes a substrate having a first face and a second face; an input port provided on the first face; a first waveguide provided on the substrate, the waveguide being connected to the input port; a first coupler provided on the substrate, the first coupler being optically connected to the first waveguide; an output port provided on the first face of the substrate, the output port being optically connected to the first coupler; and a first anti-reflection coating provided on the second face. The first face and the second face are arranged along a first direction. The first face and the second face extend in a direction intersecting the first direction. The first coupler extends in the first direction.

Abstract: A waveguide optoelectronic device comprising a rib waveguide region, and method of manufacturing a rib waveguide region, the rib waveguide region having: a base of a first material, and a ridge extending from the base, at least a portion of the ridge being formed from a chosen semiconductor material which is different from the material of the base wherein the silicon base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; and wherein: a first doped region extends along: the first slab region and along a first sidewall of the ridge, the first sidewall contacting the first slab region; and a second doped region extends along: the second slab region and along a second sidewall of the ridge, the second sidewall contacting the second slab region.

Abstract: An optical coupler device comprises an optical waveguide having a first edge and an opposing second edge that extend in a direction substantially parallel to a propagation direction of an input light beam injected into the optical waveguide. A grating structure is on a portion of the optical waveguide, with the grating structure having a first side and an opposing second side. The first and second sides of the grating structure extend in the same direction as the first and second edges of the optical waveguide. An optical slab adjoins with the first side of the grating structure and is in optical communication with an output of the grating structure. The grating structure includes an array of grating lines configured to diffract the input light beam into the slab at an angle with respect to the propagation direction, such that a diffracted light beam is output from the slab.

Abstract: Structures for a waveguide and methods of fabricating a structure for a waveguide. A first layer and a second layer are positioned in a layer stack on a surface of a waveguide core. The first layer is positioned in the layer stack between the second layer and the surface of the waveguide core. The waveguide core is composed of a first material having a first refractive index, the first layer is composed of a second material having a second refractive index that is less than the first refractive index of the first material, and the second layer is composed of a third material having a third refractive index that is less than the second refractive index of the second material.

Abstract: A bio-chip package comprises a substrate a first layer over the substrate comprising an image sensor. The bio-chip package also comprises a second layer over the first layer. The second layer comprises a waveguide system a grating coupler. The bio-chip package also comprises a third layer arranged to accommodate a fluid between a first-third layer portion and a second-third layer portion, and to allow the fluid to pass from a first side of the third layer to a second side of the third layer. The third layer comprises a material having a predetermined transparency with respect to a wavelength of a received source light, the waveguide system is configured to direct the received source light to the grating coupler, and the image sensor is configured to determine a change in the wavelength of the source light caused by a coupling between the source light and the fluid.

Abstract: A cross optical waveguide structure includes a first optical waveguide, a second optical waveguide, and an intersection portion positioned in the same plane. The first optical waveguide includes a first fixed-width portion, a second fixed-width portion, a first tapering portion, and a second tapering portion. The second optical waveguide includes a third fixed-width portion, a fourth fixed-width portion, a third tapering portion, and a fourth tapering portion. The intersection portion is linked to the first to the fourth tapering portions having such a tapering shape that a mode field radius of the light input to the first fixed-width portion, the second fixed-width portion, or the third fixed-width portion, and the fourth fixed-width portion is reduced by the first tapering portion, the second tapering portion, the third tapering portion, the fourth tapering portion, respectively, and the light is collected in the intersection portion.

Abstract: Provided are an optical film for improving a contrast ratio, a polarizing plate comprising same, and a liquid crystal display comprising same, the optical film comprising a base layer and a contrast ratio-improving layer formed on the base layer, wherein the contrast ratio-improving layer comprises a first resin layer and a second resin layer directly formed on the first resin layer, wherein the refractive index of the first resin layer is different from that of the second resin layer, wherein the first resin layer comprises: a plurality of embossed first optical patterns formed to be separated in a first direction; a plurality of embossed second optical patterns formed to intersect with the first optical patterns and be separated in a second direction; and dented parts formed by the intersection of the first optical patterns and the second optical patterns, wherein the dented parts have a height lower than that of the first resin layer.

Abstract: A silicon photonics modulator includes a rib that is a PN junction; a slab including a P doped region adjacent to the waveguide core on a first side and an N doped region adjacent to the waveguide core on a second side, opposite the first side; and a first electrode connected to the P-doped region and a second electrode connected to the N-doped region, wherein the rib is dimensioned to support guiding of a Transverse Magnetic (TM) mode with a main lobe that propagates orthogonal to the slab. The rib guides wavelengths in an infrared range in the TM mode.

Abstract: A novel methodology for characterizing and calibrating an entangled photon distribution system is disclosed. The entangled photon distribution system includes at least a source of entangled photon pairs, two photon detectors which detect photons among two channels and a controller. The methodology includes: for at least two different operational setting levels of the source of entangled photon pairs, measuring count rates for photons detected by the two photon detectors, individually and coincidently; fitting the measured individual and coincidence count rate data for the at least two different operational setting levels with theoretical models of detection probability; and determining operational parameters of the system from the fitting.

Abstract: A method for detecting the presence of or quantification of carbon black and/or black carbon in a sample or carrier medium. The method includes providing the sample or carrier medium without labelling or pre-treatment of the carbon black and/or black carbon particles; illuminating the sample or carrier medium at a temperature below 90° C. by a pulsed light with a pulse duration below 500 femtoseconds, a repetition rate above 1 MHz with an average power below 20 mW, and a wavelength of a femtosecond laser pulse ranging from 700 to 1200 nm, to generate non-incandescence related light emission from the carbon black and/or black carbon particles; and analysis of the light emission.

Abstract: Provided is a SIS-type electro-optic modulator capable of realizing highly efficient optical coupling with a rib-type Si waveguide, improving modulation efficiency, realizing reduction of electric capacity and lead-out resistance in stacked semiconductor layers. The modulator includes a SIS junction constituted by first and second semiconductor layers having different type of conductivity and a dielectric layer interposed therebetween, wherein an electrical signal from electrodes coupled to the first and second semiconductor layers causes free carriers accumulate, deplete or invert on both sides of the dielectric layer, thereby modulating a free carrier concentration felt by an optical signal electric filed, light having a polarization component orthogonal to the width direction of the SIS junction is incident on the dielectric layer, and the width of the SIS junction is ?/neff or less (? is the wavelength of the incident light and neff is an effective refractive index of the modulator to the incident light).

Abstract: An optical waveguide interferometer that includes a first optical section, a second optical section, and a set of optical waveguides configured to connect the first and second optical sections, such that light propagating between the first optical section and the second optical section passes through each optical waveguide in the set, wherein the set of optical waveguides includes a first optical waveguide having a first length and a first width and a second optical waveguide having a second length and a second width, wherein the second length is greater than the first length, and the second width is greater than the first width.

Abstract: The independent Y-shaped bead 10 is provided on the panel P with a planar shape. The bead 10 includes the plurality of branching portions 10a, 10b, and 10c radially extending from the intersection R3 at an equal interval.

Abstract: Aspects of the present disclosure disclose apparatuses, systems, and methods for providing an electromagnetic wave from one layer of a photonic circuit structure to another layer of the photonic circuit structure in at least one of the x-direction, the y-direction, and the z-direction. In so doing, aspects of the present disclosure enable the fabrication and use of multi-dimensional photonic circuit structures, and thus improve the capacity, power, weight, size, and/or cost of the circuits implemented by such multi-dimensional photonic circuit structures.

Abstract: A system for integrated power combiners is disclosed and may include receiving optical signals in input optical waveguides and phase-modulating the signals to configure a phase offset between signals received at a first optical coupler, where the first optical coupler may generate output signals having substantially equal optical powers. Output signals of the first optical coupler may be phase-modulated to configure a phase offset between signals received at a second optical coupler, which may generate an output signal having an optical power of essentially zero and a second output signal having a maximized optical power. Optical signals received by the input optical waveguides may be generated utilizing a polarization-splitting grating coupler to enable polarization-insensitive combining of optical signals. Optical power may be monitored using optical detectors. The monitoring of optical power may be used to determine a desired phase offset between the signals received at the first optical coupler.

Abstract: An energy harvesting apparatus including light collecting particles is provided. The energy harvesting apparatus includes a light collecting layer for collecting light incident thereon from the outside, a first charging member on a first surface of the light collecting layer, a second charging member on a surface of the light collecting layer opposite the first surface, and solar cells on opposite light exit surfaces between the first and second surfaces of the light collecting layer.

Abstract: An adjustable wide-spectrum wavelength-insensitive directional coupler, comprising a substrate (100). A first-stage directional coupling structure (1), a phase-shifting structure (2), and a second-stage directional coupling structure (3) are sequentially connected and disposed on the substrate (100). The phase-shifting structure (2) comprises a phase-shifting curved waveguide, a phase-shifting straight waveguide (22), and a third modulation component (26), wherein the third modulation component (26) is disposed on the phase-shifting curved waveguide. One end of the phase-shifting curved waveguide is connected to an output end of a directional coupled waveguide I (16) of the first-stage directional coupling structure (1), and the other end of the phase-shifting curved waveguide is connected to an input end of a directional coupled waveguide III (30) of the second-stage directional coupling structure (3).

Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include in an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have fingers of p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide. Contacts may be formed on the fingers of p-doped and n-doped regions. The fingers of p-doped and n-doped regions may be arranged symmetrically about the PN junction waveguide or staggered along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.

Abstract: A novel polymer optical waveguide and method of manufacturing is presented herein. A digitally manufactured process is described which utilizes a micro-dispensed UV optical adhesive as the contour guiding cladding, a fused deposition modeling technology for creating a core, additional optical adhesive to complete the cladding and a subtractive laser process to finish the two ends of the optical interconnect.

Abstract: A wafer production method for producing a wafer from a lithium tantalate ingot includes a step of irradiating, from an end face of a lithium tantalate ingot which is a 42-degree rotation Y cut ingot having an orientation flat formed in parallel to a Y axis, a laser beam of a wavelength having transparency to lithium tantalate with a focal point of the laser beam positioned in the inside of the ingot to form a modified layer in the inside of the ingot while the ingot is fed for processing, and a step of applying external force to the ingot to peel off a plate-shaped material from the ingot to produce a wafer. At the step of forming a modified layer, the ingot is relatively fed for processing in a direction parallel or perpendicular to the orientation flat.

Abstract: In accordance with the purpose(s) of the present disclosure, as embodied and broadly described herein, embodiments of the present disclosure, in one aspect, relate to porous polymer membranes, structures including porous polymer membranes, devices including porous polymer membranes, methods of using porous polymer membranes, methods of making porous polymer membranes, and the like.

Abstract: Ion implantation is carried out into a GaN layer of mLEDs to partially or fully convert one or more regions of the crystalline GaN layer to amorphous GaN. As a result, the GaN layer through which light rays propagate have non-uniform refractive indexes that modify propagation paths of some light rays. Ions can be implanted in a region around an active region that emits light to function as an optical waveguide. The ion implanted regions direct light rays that propagate along predetermined directions into predetermined propagation paths thereby to modify the angle of incidence of these light rays. As such, the light extraction efficiency of the mLEDs is increased.

Abstract: Optical switches include a phase shifter on a first branch, a first heater on the first branch, and a second heater on a second branch. A hybrid coupler combines the first branch and the second branch. A first photodetector and a second photodetector are at outputs of the second hybrid coupler to measure crosstalk between the outputs of the second hybrid coupler. A controller is configured to activate the first heater or the second heater to reduce the measured crosstalk.

Abstract: An organic EL (electroluminescent) device includes a translucent substrate, a transparent electrode, a luminescent layer, and a cathode placed over one surface of the translucent substrate, and a light extraction film having unevenness placed on the other surface. The surface of the cathode facing the luminescent layer has a plurality of recesses or protrusions. The Fourier transform image of the surface of the cathode facing the luminescent layer has a surface plasmon absorption suppression area including a spatial frequency v obtained from Eq. (I) and a light scattering area not including spatial frequencies equal to or greater than the spatial frequency v.

Abstract: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.

Abstract: A photonic platform includes a substrate, a buried oxide layer on the substrate, a first optical layer on the buried oxide layer, the first optical layer including one or more waveguides shaped as rib waveguides protruding upwardly from a common underlying slab and a second optical layer spaced above the first optical layer, the second optical layer defining an upper waveguide that crosses over the one or more partially etched waveguides. A low-loss photonic switch may be made using a silicon photonic platform implementing this waveguide crossing.

Abstract: A direct-drive polymer modulator including a platform, a multilayer waveguide formed in/on the platform, the waveguide including a bottom cladding layer, an electro-optic polymer core and a top cladding layer, and at least a portion of the waveguide forming a direct-drive polymer modulator.

Abstract: The embodiments of the present disclosure provide an optical assembly and a liquid crystal display device using the optical assembly. The optical assembly has a simple structure and low cost, and can realize a high color gamut display. The optical assembly comprises a first substrate layer, a second substrate layer, and an optical fiber layer arranged between the first substrate layer and the second substrate layer. The optical fiber layer is composed of a plurality of optical fibers arranged closely in a single layer. A plurality of adhesive blocks in contact with the plurality of optical fibers are arranged on a surface of at least one of the first substrate layer and the second substrate layer. At the contact regions between the adhesive blocks and the plurality of optical fibers, total internal reflection in the optical fibers is inhibited by the adhesive blocks.

Abstract: Multiplex polymeric dye devices are provided. Aspects of the devices include a solid support, and first and second dried polymeric dye compositions distinctly positioned relative to a surface of the solid support. Aspects of the invention further include methods of making and using the devices, e.g., in analyte detection applications, as well as kits containing the devices.

Abstract: A polymer waveguide/modulator including a lower cladding layer, a polymer core, an upper cladding layer, a first protection/barrier layer sandwiched between the lower cladding layer and the core, and a second protection/barrier layer sandwiched between the core and the upper cladding layer. The protection/barrier layers designed to protect the cladding layers and the core from solvents and gases and to prevent current leakage between the cladding layers and the core. The first protection/barrier layer is optically transparent and designed with a refractive index less than, greater than, or the same as the refractive index of the core and approximately equal to the refractive index of the lower cladding layer. The second protection/barrier layer is optically transparent and designed with a refractive index less than, greater than, or the same as the refractive index of the core and approximately equal to the refractive index of the upper cladding layer.