Abstract: An optical modulator includes: first and second optical waveguides formed of an electro-optic material film on a substrate so as to have a ridge shape and to be disposed adjacent to each other; a buffer layer covering at least the upper surfaces of the first and second optical waveguides; and first and second signal electrodes provided above the buffer layer. The first and second signal electrodes have, respectively, first and second lower layer parts opposite, respectively, to the first and second optical waveguides through the buffer layer; and first and second upper layer parts provided, respectively, above the first and second lower layer parts. Widths of the lower surfaces of the first and second lower layer parts are smaller than widths of the first and second upper layer parts.

Abstract: An apparatus for determining unknown radio frequencies is described. The apparatus modulates a first optical signal from tunable optical source with RF signal that includes unknown center frequency value to generate modulated optical signal. The apparatus combines modulated optical signal with second optical signal to generate combined modulated optical signal. The apparatus receives output electrical signal from photodetector in response to receiving combined modulated optical signal at photodetector, splits output electrical signal into first output electrical signal and second output electrical signal, and filter first output electrical signal by applying first optical bandpass filter centered to generate first filtered RF signal. The apparatus tunes tunable optical source to first beat frequency value to determine unknown frequency value of RF signal.

Abstract: A photonic system includes a passive optical cavity and an optical waveguide. The passive optical cavity has a preferred radial mode for light propagation within the passive optical cavity. The preferred radial mode has a unique light propagation constant within the passive optical cavity. The optical waveguide is configured to extend past the passive optical cavity such that at least some light propagating through the optical waveguide will evanescently couple into the passive optical cavity. The passive optical cavity and the optical waveguide are collectively configured such that a light propagation constant of the optical waveguide substantially matches the unique light propagation constant of the preferred radial mode within the passive optical cavity.

Abstract: To provide a highly-reliable low-cost small optical modulator in which temperature drift is suppressed and an optical transmission device using the same. An optical modulator including an optical waveguide substrate 1 on which an optical waveguide is formed, a signal electrode which is provided on the optical waveguide substrate and applies an electric field to the optical waveguide, a termination substrate 3 provided with a termination resistor that terminates the signal electrode, and a housing 6 in which the optical waveguide substrate and the termination substrate are mounted, in which, in order to suppress conduction of heat generated from the termination resistor to the optical waveguide substrate through the housing, a groove 8 is formed in the housing 6 between the termination substrate 3 and the optical waveguide substrate 1.

Abstract: An optical semiconductor device includes a semiconductor substrate, a first semiconductor layer provided on the semiconductor substrate, and a mesa waveguide provided on the principal surface of the first semiconductor layer. The semiconductor device also includes a buried layer covering the upper surface of the first semiconductor layer. Part of the upper surface of the first semiconductor layer is exposed. A mesa structure provided at the boundary between a part of the first semiconductor layer is covered with the buried layer and a part of the first semiconductor layer is exposed. One side of the mesa structure is covered with the buried layer, and the other side is exposed. The optical semiconductor device can reduce the generation of stress in the buried layer, for example, to suppress the occurrence of cracks in the buried layer and enhance the reliability.

Abstract: The present disclosure relates to an electro-optical modulator system having a source laser which generates an input optical signal. The input optical signal is received by an electro-optical module. The electro-optical module is implantable into an anatomy and includes a plurality of pixels. Each pixel has associated therewith an electrode and an optical modulator subsystem. The electrode receives electrical signals from the anatomy. The optical modulator subsystem receives the input optical signal and modulates the input optical signal to generate modulated optical output signals in relation to the received electrical signals. A detector subsystem may be used to receive and collect the modulated optical output signals.

Abstract: An athermal optical waveguide structure such as an optical add drop multiplexer (OADM) or the like is fabricated by a method that includes forming a lower cladding layer on a substrate. A waveguiding core layer is formed on the lower cladding layer. An upper cladding layer is formed on the waveguiding core layer and the lower cladding layer a sol-gel material. The sol-gel material includes an organically modified siloxane and a metal oxide. A thermo-optic coefficient of the sol-gel material is adjusted by curing the sol-gel material for a selected duration of time at a selected temperature such that the thermo-optic coefficient of the sol-gel material compensates for a thermo-optic coefficient of at least the waveguiding core layer such that an effective thermo-optic coefficient of the optical waveguide structure at a specified optical wavelength and over a specified temperature range is reduced.

Abstract: A method of operating an optical modulator. The optical modulator having: a rib waveguide which includes a junction which is either a PIN or PN junction, the junction having a breakdown voltage. The method comprising: applying a reverse bias to the junction, so as to operate the optical modulator around the breakdown voltage of the junction; operating the modulator in an avalanche multiplication and/or band-to-band tunnelling mode by increasing the reverse bias past the breakdown voltage.

Abstract: A guide transition device including a light source designed to generate a light beam, a light input port on a first plane and coupled to receive the light beam from the light source, a light output port on a second plane different than the first plane, the light output port designed to couple a received light beam to output equipment and plane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane. The plane shifting apparatus is coupled to transfer the light beam to the light output port on the second plane.

Abstract: Disclosed is a quantum-confined Stark effect (QCSE) modulator. In the modulator, a first doped semiconductor region has a first type conductivity, is at the bottom of a trench in a dielectric layer and is immediately adjacent to a semiconductor layer. An MQW region is in the trench on the first doped semiconductor region and at least upper segments of sidewalls of the MQW region are angled away from adjacent sidewalls of the trench such that there are spaces between the MQW region and the dielectric layer. Dielectric spacers fill the spaces. A second doped semiconductor region has a second type conductivity, is on top of the MQW region and optionally extends laterally onto the tops of the dielectric spacers. The spacers prevent shorting of the doped semiconductor regions. Also disclosed are embodiments of a photonics structure including the modulator and of methods for forming the modulator and the photonics structure.

Abstract: In a general aspect, vapor cells are disclosed that include a dielectric body having a first surface and a second surface. The dielectric body includes a plurality of cavities extending from the first surface to the second surface and ordered periodically to define a photonic crystal structure in the dielectric body. Each cavity has a first opening defined by the first surface and a second opening defined by the second surface. The photonic crystal structure has a photonic band gap. The vapor cells additionally include a first optical window covering the first openings and having a surface bonded to the first surface of the dielectric body to form a seal around each of the first openings. A second optical window covers the second openings and has a surface bonded to the second surface of the dielectric body to form a seal around each of the second openings.

Abstract: A direct-drive region-less polymer modulator includes a waveguide having a first cladding layer, a passive core with a surface abutting the first cladding layer, the passive core extending to an optical input and an optical output. A shaped electro-optic polymer active component with a surface abutting the passive core region, the shaped component being polled to align dipoles and promote modulation of light and having a length that extends only within a modulation area defined by modulation electrodes. A second cladding layer enclosing the shaped component and designed to produce adiabatic transition of light waves traveling in the passive core region into the shaped component to travel the length of the shaped component and return to the passive core region. A portion of the multilayer waveguide defining the polymer modulator as a direct-drive polymer modulator.

Abstract: Embodiments herein describe reverse biasing one or more PIN junctions formed in at least one layer of a PSR. The resulting electric fields in the PIN junctions overlap with the optical path of the optical signal and sweep away photo-generated hole-electron free carriers away. That is, the electric fields in the PIN junctions remove the free carriers from the path of the optical signal and reduces the population of the free carriers, thereby mitigating the negative impact of free-carrier absorption (FCA).

Abstract: According to one embodiment, an electro-optical device comprises a flexible first substrate and a flexible second substrate which include an electro-optical area, a drive area in the first substrate with terminals formed in the drive area, an external drive circuit connected to the terminals, conductive lines extending from the terminals to the electro-optical area side, and a first resin film overlapping the conductive lines. Further, a gap is formed between the first resin film and the second substrate in planar view.

Abstract: The performance of an electro-optic modulator depends in part on the capacitance, the inductance, the electric field distribution, and the signal insertion loss of a microwave transmission line that modulates the refractive index of a waveguide via the electro-optic effect. Conventional electro-optic modulators are typically unable to improve one of these properties without negatively affecting other properties, resulting in lower performance. These shortcomings may be overcome, in part, by the inclusion of capacitive structures to decouple these properties. The capacitive structure may include a fang and/or a hook to tune the capacitance and the electric field distribution without appreciably changing the inductance or the signal insertion losses.

Abstract: Various embodiments of a monolithic electro-optical (E-O) modulator are described. The monolithic E-O modulator includes an active region comprising a plurality of p-n junction diodes, as well as a modulation electrode and a bias electrode that extend through the active region. The monolithic E-O modulator further includes a resistor-capacitor-bias-capacitor (RCBC) electrode structure configured to receive an electrical modulation signal, a direct-current (DC) bias voltage and a power supply voltage. Specifically, the RCBC electrode structure includes a resistor coupled to the modulation electrode and two capacitors each coupled to a respective end of the bias electrode. Beneficially, the RCBC electrode structure enables the p-n junction diodes to be biased independently from a DC level of the electrical modulation signal.

Abstract: The invention relates to optical modulation devices and, in particular, monolithically integrated optical modulation devices. Disclosed herein is a monolithically integrated optical modulation device (200) that comprises: an input optical port (210); an output optical port (215); and an optical waveguide for guiding light from the input optical port to the output optical port. A portion of the optical waveguide is split into at least two branches. The waveguide is configured to cause a net 180° change in direction of the light while guiding said light from the input optical port to the output optical port such that the input optical port and the output optical port are positioned on a first edge of the device. At least some of the net 180° change in direction is achieved within the branches of the waveguide.

Abstract: An optical transmitter comprises a directly coupled MZ interferometer and driver circuit. The MZ interferometer comprises a pair of differentially driven MZ electrodes configured to impart RF signals to light travelling through respective arms of the interferometer, and to receive DC bias as a positive voltage via lower n-type cladding of the MZ interferometer. The lower n-type cladding is at a different positive DC potential to an upper plane RF ground of the MZ interferometer, but the lower n-type cladding and the upper plane RF ground have similar AC potential. The MZ interferometer also comprises a pair of resistors in series configured to provide differential RF termination of the MZ electrodes; and a capacitive coupling between a virtual ground formed at a centre point between the pair of resistors and an RF ground configured to provide common-mode RF termination. The DC supply for the driver circuit is applied to the centre point of the RF termination.

Abstract: A plasmonic quantum well laser may be provided. The plasmonic quantum well laser includes a plasmonic waveguide and a p-n junction structure extends orthogonally to a direction of plasmon propagation along the plasmonic waveguide. Thereby, the p-n junction is positioned atop a dielectric material having a lower refractive index than material building the p-n junction, and the quantum well laser is electrically actuated. A method for building the plasmonic quantum well laser is also provided.

Abstract: Embodiments provide for an optical modulator that includes a first silicon region, a polycrystalline silicon region; a gate oxide region joining the first silicon region to a first side of the polycrystalline region; and a second silicon region formed on a second side of the polycrystalline silicon region opposite to the first side, thereby defining an active region of an optical modulator between the first silicon region, the polycrystalline region, the gate oxide region, and the second silicon region. The polycrystalline silicon region may be between 0 and 60 nanometers thick, and may be formed or patterned to the desired thickness. The second silicon region may be epitaxially grown from the polycrystalline silicon region and patterned into a desired cross sectional shape separately from or in combination with the polycrystalline silicon region.

Abstract: An electro-optic waveguide device may include a slot waveguide including a lower high-refractive-index layer with a first refractive index and an upper high-refractive-index layer with a second refractive index, wherein the lower high-refractive-index layer and the upper high-refractive-index layer have conductivity and are disposed to face each other with a gap; and a slot part formed as a low-refractive-index layer, wherein the low-refractive-index layer is formed of a material producing an electro-optic effect and has a third refractive index lower than the first refractive index and the second refractive index, wherein the low-refractive-index layer is formed in the gap to come into contact with the lower high-refractive-index layer and the upper high-refractive-index layer, and wherein one of the lower high-refractive-index layer or the upper high-refractive-index layer includes a stretch stretching on both sides of a contact portion with the slot part in a width direction intersecting a transmission dir

Abstract: A quantum light emitting device includes a carrier substrate, an insulator, a first semiconductor device, a second semiconductor device, a first contact, and a second contact. The quantum light device includes a carrier substrate comprising silicon and configured with an electrically insulating top surface. The quantum light device also includes an insulator configured on the carrier substrate. The quantum light device includes a first semiconductor structure comprising a first semiconductor material configured on the insulator. Further, the quantum light device includes a second semiconductor structure comprising a second semiconductor material configured on the insulator, with an overlap region of the second semiconductor structure electrically coupling with the first semiconductor structure, a dimensional characteristic of the overlap region being configured to limit a photon emission from the overlap region to a single photon.

Abstract: An EO phase shifter for modulating an electrical signal onto an optical wave is manufactured using CMOS process tools whereby a waveguide core made of EO material has intimate contacts with its electrodes. Specifically, the waveguide core is made of a Silicon-Rich Silicon Nitride (SRN) material which has a high linear refractive index n and a high third order nonlinear susceptibility. The electrodes are made of P or N doped silicon. Also, polarization of the optical wave is oriented normal to interfaces between the waveguide core and the electrodes. With this combination, the EO phase shifter exhibits high optical confinement, low propagation loss, and a high electro-optic overlap integral for modulation.

Abstract: In a waveguide-type optical modulation element that modulates light by applying radio frequency signals to an electrode, the realization of the additional broadening of the bandwidth by improving the degree of freedom in the design of the electrode is enabled. An optical modulation element, which includes optical waveguides provided in a substrate and electrodes that control light waves propagating through the optical waveguides and modulates light by propagating radio frequency signals to the electrodes, in which the electrodes include conductive layers made of copper or a copper alloy and protective layers made of a material other than copper and a copper alloy.

Abstract: One illustrative TE pass polarizer disclosed herein includes an input/output layer, a first buffer layer positioned above at least a portion of the input/output layer, a layer of epsilon-near-zero (ENZ) material positioned above at least a portion of the first buffer layer, and a metal-containing capping layer positioned above at least a portion of the layer of ENZ material.

Abstract: Systems and methods for providing a phase modulator. The methods comprise creating a Field Effect Transistor (FET) by: placing a crystal structure displaying ambipolarity on a substrate comprising an oxide layer and a conductive silicon layer, the conductive silicon layer providing a gating electrical contact for the phase modulator, and forming source and drain electrical contacts on the crystal structure using e-beam lithography and an e-beam evaporator. The methods also comprising: annealing the FET to improve an interface between the crystal structure and the source and drain electrical contacts; and coating the FET with a dielectric layer to reduce or eliminate hysteresis so that a functionality of the phase modulator is improved.

Abstract: In an embodiment, a method and apparatus for increasing bandwidth of an optical modulator by applying a first voltage applied to a beginning of a resistive line and applying a second voltage applied to an end of the resistive line; wherein the first voltage is less than the second voltage.

Abstract: An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

Abstract: A method of making a two-phase light-transmissive electrode layer comprising a first phase made of a highly electronically-conductive matrix and a second phase made of a polymeric material composition having a controlled volume resistivity.

Abstract: Evaluating a design of a configurable inspection station for inspecting a workpiece, wherein the design of the configurable inspection station has a plurality of changeable parameters and providing a computer vision system that can receive multiple, different inputs each defining a respective region of interest in a simulated image to search for a feature corresponding to an attribute of the workpiece and determine whether the feature corresponding to the attribute is identifiable in each of the respective regions of interest.

Abstract: An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.

Abstract: Embodiments may relate to an optical modulator system. The optical modulator system may include a first photodiode to measure a first optical level at an output of a Mach-Zehnder modulator (MZM). The system may further include a second photodiode to measure a second optical level at a termination of the MZM. The system may further include a logic coupled with the first photodiode and the second photodiode, the logic to identify a modulator bias that minimizes the first optical level. Other embodiments may be described or claimed.

Abstract: An electroabsorption modulator. The modulator comprising an SOI waveguide; an active region, the active region comprising a multiple quantum well (MQW) region; and a coupler for coupling the SOI waveguide to the active region. The coupler comprising: a transit waveguide coupling region; a buffer waveguide coupling region; and a taper region; wherein, the transit waveguide coupling region couples light between the SOI waveguide and the buffer waveguide coupling region; and the buffer waveguide coupling region couples light between the transit waveguide region and the active region via the taper region.

Abstract: A semiconductor structure includes a first dielectric waveguide, a second dielectric waveguide, a first inter-level dielectric (ILD) material, a first transmitter coupling structure and a second transmitter coupling structure. The first and second dielectric waveguides are disposed one over the other. The first dielectric waveguide is configured to guide a first electromagnetic signal. The second dielectric waveguide is configured to guide a second electromagnetic signal. The first and second electromagnetic signals have different frequencies. The first ILD material is disposed between the first and second dielectric waveguides. The first transmitter coupling structure is configured to couple a first driver signal generated by a transmitter die to the first dielectric waveguide, and accordingly produce the first electromagnetic signal.

Abstract: An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and a second redistribution structure. The first redistribution structure has a dielectric layer and a feed line disposed on the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The insulation encapsulation has a protrusion laterally wraps around the feed line. The insulation encapsulation has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer. The second redistribution structure is disposed on the die and the insulation encapsulation.

Abstract: An optical modulator includes: a bottom substrate layer, having a first surface; a traveling-wave electrode, being disposed on the first surface of the bottom substrate layer and including a plurality of ground electrodes and a plurality of signal electrodes between the ground electrode; an optical waveguide disposed inside the bottom substrate layer; and a shield layer, including a substrate and a metal layer, the substrate covering at least a portion of the traveling-wave electrode and the metal layer being disposed on the surface of the substrate facing away from the traveling-wave electrode. Each of the ground electrodes is electrically connected to the metal layer to provide electromagnetic shielding for the signal electrodes between the ground electrodes.

Abstract: A light beam can be steered using a non-mechanical beam steerer structure. For example, a combination of sub-aperture and full-aperture beam steering structures can be used (e.g., corresponding to regions of controlled variation in an index of refraction). The sub-aperture elements can include tapered structures defining a saw-tooth or triangular footprint in the plane in which the in-plane steering is performed. Respective rows of sub-aperture tapered structures can be configured to controllably steer the light beam in the first in-plane direction, wherein at least one row of sub-aperture tapered structures defines a first base region edge that is tipped at a first specified in-plane angle relative to a second base region edge defined by another row. Use of the tipped configuration can simplify a configuration of the beam steerer structure, such as allowing a configuration lacking a compensation plate at the input.

Abstract: To provide a method whereby a bias voltage capable of easily realizing a required extinction ratio can be controlled by utilizing a high-extinction ratio modulator even when a generic AD converter/control board is used, and a device for realizing the method. In the present invention, the step quantity (variation quantity) ?V of a control voltage is no more than 0.1 times the half-wave voltage V? [V]. For example, in the case of searching for the minimum point, the light intensity is measured when a bias that is larger by the step voltage ?V and a bias that is smaller by the step voltage ?V are applied, the current bias voltage being used as a reference, and the bias voltage is moved toward the smaller of the measured light intensities. The process of setting the moved bias voltage as a reference, comparing the light intensities for the bias points in both neighboring positions, and changing the reference bias voltage is then repeated.

Abstract: In an optical waveguide element, an optical waveguide is formed on a substrate, the optical waveguide has a main waveguide that propagates signal light, a waveguide for unnecessary light that guides unnecessary light released from the main waveguide, and a waveguide for collecting unnecessary light to which the unnecessary light emitted from the waveguide for unnecessary light is introduced, the waveguide for unnecessary light is connected to the waveguide for collecting unnecessary light via a waveguide for connection, and a width of the waveguide for connection, which is a width in a direction that perpendicularly intersects a propagation direction of the unnecessary light, at a portion connected to the waveguide for collecting unnecessary light is set to be wider than a width at a portion connected to the waveguide for unnecessary light with the waveguide for connection.

Abstract: Described are various embodiments of a dual optical modulator, system and method. In one embodiment, an optical modulator modulates an input optical signal having a designated optical frequency. The modulator comprises first and second tunable modulators operable around the optical frequency and operatively disposed between a bus waveguide path and an opposed waveguide path. The modulator further comprises a relative optical phase-shifter optically coupled between the tunable modulators so to impart a relative optical phase shift between the bus waveguide path and the opposed waveguide path. The tunable modulators are respectively driveable to modulate a respective resonance thereof in complimentary directions relative to the optical frequency and thereby resonantly redirect a selectable portion of the input optical signal along the opposed waveguide path such that the relative optical phase shift is imparted thereto for output.

Abstract: A sensing and analysis system on a chip for sensing and analyzing chemical or biological analytes includes a chromatography column having an inlet and an outlet formed on the chip for temporal separation of components of analytes and at least one whispering gallery mode (WGM) optical resonator for sensing of the components. The chromatography column is formed on a first wafer layer. Each WGM optical resonator includes a hollow sealed enclosure formed at or over the inlet or the outlet of or elsewhere along the chromatography column such that a gas flowing through the chromatography column fills the hollow sealed enclosure. Each WGM optical resonator further includes an optical waveguide aligned with the sealed hollow enclosure for evanescent wave light coupling.

Abstract: A plasmonic quantum well laser may be provided. The plasmonic quantum well laser includes a plasmonic waveguide and a p-n junction structure extends orthogonally to a direction of plasmon propagation along the plasmonic waveguide. Thereby, the p-n junction is positioned atop a dielectric material having a lower refractive index than material building the p-n junction, and the quantum well laser is electrically actuated. A method for building the plasmonic quantum well laser is also provided.

Abstract: To provide an optical comb generation device and an optical comb signal generation method capable of stably generating an optical comb signal having an optical frequency interval exceeding the drive electric signal band of a modulator.

Abstract: Van der Waals heterojunctions are extended to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type film that can be solution-processed with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions can exhibit anti-ambipolar transfer characteristics with high on/off ratios. The charge transport can be efficiently utilized in analog circuits such as frequency doublers and keying circuits that are widely used, for example, in telecommunication and wireless data transmission technologies.

Abstract: In an optical modulator including an FPC for performing electrical connection with an external circuit substrate, to maintain high light transmission quality by appropriately driving the optical modulator even when the reflection of a radio frequency signal occurs in a connection portion between the FPC and the main body of the optical modulator. Provided is an optical modulator including a flexible printed circuit for performing electrical connection with a circuit substrate, in which the flexible printed circuit includes at least one wire pattern for propagating a radio frequency signal, and the wire pattern includes at least one radio frequency attenuation portion for attenuating power of the radio frequency signal by a predetermined amount.

Abstract: The invention provides an apparatus for optical integrated on-chip generation of photon pairs as a building block to create entangled photon states required for quantum information processing. The invention provided a frequency selective optical coupling device which controls the transmission of light by varying the relative dimensions of otherwise symmetrical linear optical waveguides tangential to an annular optical waveguide, thereby controlling the coupling of light between the linear optical waveguides and the annular optical waveguide. Dimensional change of the optical waveguides is achieved by a heated medium in proximity of the optical waveguides and under electronic control.

Abstract: In example implementations, an optical gate is provided. The optical gate receives at least one optical signal via a waveguide of an optical memory gate. The optical gate compares a wavelength of the at least one optical signal to a resonant wavelength associated with a resonator. When the wavelength of the at least one optical signal matches the resonant wavelength, a value that is stored in the resonator is read out via the at least one optical signal. Then, the at least one optical signal with the value that is read out is transmitted out of the optical gate.

Abstract: An object of the invention is to provide an optical waveguide device which is able to efficiently absorb or remove leaked light propagating in a substrate. An optical waveguide device in which an optical waveguide is formed on a substrate, in which the optical waveguide includes a main waveguide through which signal light propagates, and a metal layer (a bonding layer or an electrode) is formed, through a high refractive index layer having a refractive index higher than the refractive index of the substrate, in at least a part of a region on which the main waveguide is not formed.

Abstract: A modulator may include a substrate. The modulator may include one or more waveguides formed upon or formed in the substrate. A signal electrode may be provided adjacent to at least one of the one or more waveguides and may include a curved outer surface. The modulator may include one or more ground electrodes provided adjacent to the signal electrode. Each ground electrode, of the one or more ground electrodes, may include a respective curved inner surface that is radially spaced from the curved outer surface of the signal electrode. The one or more ground electrodes and the substrate may at least substantially enclose the curved outer surface of the signal electrode.

Abstract: A core-shell nanowire laser structure comprises a substrate (12), an elongated support element (14) extending from the substrate, the support element having a first diameter, and an elongated body element (16) extending on and/or around the support element, the body element having a second diameter at least two times larger than the first diameter, wherein the body element is spaced apart from the substrate.