Abstract: A heating device and a heating chamber are provided, comprising a base plate (21), at least three supporting columns (22) and a heating assembly, where the at least three supporting columns are arranged vertically on the base plate and are distributed at intervals along a circumferential direction of the base plate Top ends of the at least three supporting columns form a bearing surface for supporting a to-be-heated member (23). The heating assembly includes a heating light tube (24) and a thermal radiation shielding assembly, where the heating light tube is disposed above the base plate and below the bearing surface. A projection of an effective heating area formed by uniform distribution of the heating light tube on the base plate covers a projection of the bearing surface on the base plate. The thermal radiation shielding assembly shields heat radiated by the heating light tube towards surroundings and bottom.

Abstract: Heating treatment is performed on a semiconductor wafer in an ammonia atmosphere formed in a chamber by light irradiation from halogen lamps and flash lamps. For the formation of the ammonia atmosphere in the chamber, pressure in the chamber is once reduced. The pressure in the chamber is also reduced after the heating treatment of the semiconductor wafer. Light irradiation from the halogen lamps is performed to heat the atmosphere in the chamber before the pressure in the chamber is reduced by exhausting the atmosphere from the chamber. The heating of the atmosphere in the chamber before the pressure reduction activates the thermal motion of gas molecules in the atmosphere and decreases a gas density. As a result, the gas molecules in the chamber are discharged rapidly during the pressure reduction, so that the pressure in the chamber is reduced to a predetermined pressure in a short time.

Abstract: Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.

Abstract: An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.

Abstract: When a chamber of a heat treatment apparatus is opened for a purpose such as maintenance of the heat treatment apparatus, particles flow in large quantities into the chamber together with an outside atmosphere. After maintenance work is finished, an enclosed space is formed in the chamber and gas in the chamber is exhausted to place the interior of the chamber in a reduced-pressure atmosphere. While the interior of the chamber is in the reduced-pressure atmosphere, the interior of the chamber is irradiated with a flash of light emitted multiple times from a flash lamp to cause momentary gas expansion and subsequent gas shrinkage repeatedly, thereby causing particles adhering in the chamber to fly. The flying particles are discharged from the chamber to remove the particles.

Abstract: Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer, provided between the semiconductor wafer and the high dielectric constant film. After a chamber houses the semiconductor wafer, a chamber's pressure is reduced to be lower than atmospheric pressure. Subsequently, a gaseous mixture of ammonia and nitrogen gas is supplied into the chamber to return the pressure to ordinary pressure, and the front surface is irradiated with a flash light, thereby performing post deposition annealing (PDA) on the high dielectric constant film. Since the pressure is reduced once to be lower than atmospheric pressure and then returned to ordinary pressure, a chamber's oxygen concentration is lowered remarkably during the PDA. This restricts an increase in thickness of the silicon oxide film underlying the high dielectric constant film by oxygen taken in during the PDA.

Abstract: A heating, ventilation, and air conditioning system includes an air moving device configured to move air through the HVAC system, a first variable frequency drive (VFD) configured to drive the air moving device, and a second VFD configured to drive the air moving device, wherein the first VFD and the second VFD are configured receive control instructions and to selectively operate based on the control instructions.

Abstract: A rapid heat treatment apparatus comprises: a chamber for rapid heat treatment; a support stage radiating light to rapidly heat a substrate for rapid heat treatment; a substrate for temperature measurement which is made of a same material as the substrate for rapid heat treatment; a thermocouple for temperature measurement measuring a temperature of the substrate for temperature measurement; a support part formed of a light-transmitting material that supports the substrate for temperature measurement; and a light-transmitting plate disposed between the support part and the heat source device to isolate the opposite internals spaces of the chamber from each other, wherein the temperature of the substrate for temperature measurement, which is measured by the thermocouple, is considered to be the temperature of the substrate subjected to rapid heat treatment.

Abstract: A heater assembly with enhanced cooling pursuant to various embodiments described herein makes use of fluidic flow in the insulation or in the space used for insulation. By creating a natural convection or forced convection flow, the heater cools down faster, it can operate at lower temperatures and/or higher temperature precision, and it can improve temperature controllability by generating higher heat loss rates.

Abstract: A method is provided for stabilizing filaments in a chemical vapor deposition (CVD) reactor. The method includes providing the pair of filaments, and connecting the pair of filaments with at least one stabilizer. The stabilizer may include an electronically insulating material.

Abstract: A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the chamber is reduced to a pressure lower than atmospheric pressure. Thereafter, nitrogen gas is supplied into the chamber to return the pressure in the chamber to ordinary pressure, and the front surface of the semiconductor wafer is irradiated with a flash of light, so that a silicide that is a compound of the metal film and silicon is formed. The oxygen concentration in the chamber is significantly lowered during the formation of the silicide because the pressure in the chamber is reduced once to the pressure lower than atmospheric pressure and then returned to the ordinary pressure. This suppresses the increase in resistance of the silicide resulting from the entry of oxygen in the atmosphere in the chamber into defects near the interface between the metal film and a base material.

Abstract: A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the chamber is reduced to a pressure lower than atmospheric pressure. Thereafter, nitrogen gas is supplied into the chamber to return the pressure in the chamber to ordinary pressure, and the front surface of the semiconductor wafer is irradiated with a flash of light, so that a silicide that is a compound of the metal film and silicon is formed. The oxygen concentration in the chamber is significantly lowered during the formation of the silicide because the pressure in the chamber is reduced once to the pressure lower than atmospheric pressure and then returned to the ordinary pressure. This suppresses the increase in resistance of the silicide resulting from the entry of oxygen in the atmosphere in the chamber into defects near the interface between the metal film and a base material.

Abstract: Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer, provided between the semiconductor wafer and the high dielectric constant film. After a chamber houses the semiconductor wafer, a chamber's pressure is reduced to be lower than atmospheric pressure. Subsequently, a gaseous mixture of ammonia and nitrogen gas is supplied into the chamber to return the pressure to ordinary pressure, and the front surface is irradiated with a flash light, thereby performing post deposition annealing (PDA) on the high dielectric constant film. Since the pressure is reduced once to be lower than atmospheric pressure and then returned to ordinary pressure, a chamber's oxygen concentration is lowered remarkably during the PDA. This restricts an increase in thickness of the silicon oxide film underlying the high dielectric constant film by oxygen taken in during the PDA.

Abstract: An incubator is provided that prevents damage to the arm of an operator when an arm abuts against the upper end segment of a baby guard relatively hard while inserting the arm into an infant accommodation space. The walls of the baby guards around the infant accommodation space have bent segments that are sufficiently strong to serve as a guard structure on the periphery of the infant accommodation space. Each of the bent segments in the upper end segments of the walls includes an inclined segment and a substantially horizontal segment integrally connected to a distal end of the inclined segment. At least some of the walls can pivot between upward and downward positions, thereby closing or revealing cassette trays.

Abstract: Power feed connections and sauna heating panels include a power feed having a first insulated conductor electrically coupled to a first terminal and a second insulated conductor electrically coupled to a second terminal. The first and second terminals are electrically coupled with at least one heating element. In some cases the power feed includes a supply portion, a connection portion, and an extension portion. The extension portion has one or more conductors in a twisted configuration extending away from the first and second terminals. In some cases the power feed includes an extension conductor portion coupled to a return conductor portion in a twisted configuration. The extension portion extends away from a second terminal past a second connection point and the return portion returns back to and connects to the second connection point at the second terminal. Methods for providing power connections to heating panels are also provided.

Abstract: A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the chamber is reduced to a pressure lower than atmospheric pressure. Thereafter, nitrogen gas is supplied into the chamber to return the pressure in the chamber to ordinary pressure, and the front surface of the semiconductor wafer is irradiated with a flash of light, so that a silicide that is a compound of the metal film and silicon is formed. The oxygen concentration in the chamber is significantly lowered during the formation of the silicide because the pressure in the chamber is reduced once to the pressure lower than atmospheric pressure and then returned to the ordinary pressure. This suppresses the increase in resistance of the silicide resulting from the entry of oxygen in the atmosphere in the chamber into defects near the interface between the metal film and a base material.

Abstract: A semiconductor manufacturing apparatus is capable of reducing power consumption. The semiconductor manufacturing apparatus 1 includes a processing chamber 2 that has a top surface 2a and forms a processing space S therein; a mounting table 3 provided in the processing space S; an upper electrode 20 provided above the mounting table 3 to face the mounting table 3; heaters 35 and 36 provided around the upper electrode 20 and below the top surface 2a of the processing chamber 2 and configured to heat the upper electrode 20; and a heat insulating unit 50, mounted on the top surface 2a of the processing chamber 2, having a plate-shaped member 51 and a heat insulating member 52 that is provided on one main surface 51a of the plate-shaped member 51.

Abstract: A method for operating a mobile magnetic resonance tomography system having magnets and/or coils generating a magnetic field and a shield surrounding the magnets and/or coils is intended to enable an optimal image quality during the examination and at the same time have a small space requirement. For this purpose, a temperature is measured at a plurality of points on the shield by a temperature measuring system, where measured data of the temperature measuring system is sent to a compensation system, and where effects of temperature differences on the homogeneity of the magnetic field are compensated by the compensation system.

Abstract: A connected oven, including a set of in-cavity sensors and a processor configured to automatically identify foodstuff within the cooking cavity, based on the sensor measurements; and automatically operate the heating element based on the foodstuff identity.

Abstract: Provided is a method of manufacturing a semiconductor device using a heating device capable of suppressing shearing of a holder due to thermal deformation of the heating element included in the heating device. The method includes: loading a substrate into a process chamber surrounded by a heating device including a heating element; and increasing temperature of the heating element including a mountain part and a valley part alternately connected in plurality to form a meander shape with both ends thereof being fixed to an insulating body installed at an outer circumference of the heating element wherein the heating element is fixed to the insulating body by a holding body disposed in a holding body receiving part installed at end of the valley part having a cutout part having a width larger than that of the valley part to heat the substrate in the process chamber.

Abstract: A semiconductor wafer with (100) plane orientation has two orthogonal cleavage directions. A notch is provided so as to indicate one of these directions. During irradiation with a flash, the semiconductor wafer warps about one of two radii at an angle of 45 degrees with respect to the cleavage directions such that the upper surface thereof becomes convex, and the opposite ends of the other radii become the lowest position. Eight support pins in total are provided in upright position on the upper surface of a holding plate of a susceptor while being spaced at intervals of 45 degrees along the same circumference. The semiconductor wafer is placed on the susceptor such that any of the support pins supports a radius at an angle of 45 degrees with respect to a cleavage direction.

Abstract: Bifacial crystalline solar cells and associated solar panel systems are provided. The cells include a p-type crystalline silicon layer and a barrier layer. The panels include at least two rows of cells. The cells in each row are connected to one another in series. The rows are connected in parallel. A reflector is used to reflect light towards the underside of the panel. A long axis of the reflector is arranged to be parallel to the rows of cells.

Abstract: Bifacial crystalline solar cells and associated solar panel systems are provided. The cells include a p-type crystalline silicon layer and a barrier layer. The panels include at least two rows of cells. The cells in each row are connected to one another in series. The rows are connected in parallel. A reflector is used to reflect light towards the underside of the panel. A long axis of the reflector is arranged to be parallel to the rows of cells.

Abstract: Disclosed are a method and a system for processing wafers in fabricating a semiconductor device where disposing chemicals and wafer heating are needed for chemical reaction. A wafer is placed above a wafer heater such that a second surface faces the wafer heater, and heated from the second surface. A chemical layer is formed on an opposing first surface. The wafer heater is sized and configured to be capable of heating the entire second surface, and adapted to produce a locally differential temperature profile if needed. During heating, an actual temperature profile on the wafer may be monitored and transmitted to a computing system, which may generate a target temperature profile and control the wafer heater to adjust local temperatures on the wafer according to the target temperature profile. A supplemental heater for heating the chemicals may be used for finer control of the wafer temperature.

Abstract: Animation of a thermal image captured by a thermal imager that includes automatically changing particular aspects of the presentation of the image. The coloring of the thermal image may automatically change through two or more color presentations. The colors which may automatically change or be “animated” may be any colors in the usual rainbow of color or in the grayscale. The animation may include a series of small, stepwise incremental changes that gradually change the image. If timed correctly and if the increments are sufficiently small, the transitions of the image may appear smooth, in the manner of a movie or cartoon.

Abstract: A method and apparatus for rapid thermal heat treatment of semiconductor and other substrates is provided. A number of heat lamps arranged in an array or other configuration produce light and heat radiation. The light and heat radiation is directed through a heat slot that forms a radiation beam of high intensity light and heat. The radiation beam is directed to a platen that includes multiple substrates. The apparatus and method include a controller that controls rotational and translational motion of the platen relative to the heat slot and also controls the power individually and collectively supplied to the heat lamps. A program is executed which maneuvers the platen such that all portions of all substrates receive the desired thermal treatment, i.e. attain a desired temperature for a desired time period.

Abstract: Embodiments of the present disclosure provide thermal processing chambers including a drive mechanism and a heating assembly disposed on opposite sides of a substrate support assembly. Particularly, the heating assembly is disposed below the substrate support assembly to process a substrate with a device side facing up and the drive mechanism is disposed above the substrate assembly.

Abstract: The heat treatment apparatus that increases a temperature of a processing object and performs a heat treatment in a constant temperature, the heat treatment apparatus includes: a processing chamber which accommodates the processing object; a heating unit which heats the processing object accommodated in the processing chamber; a memory unit which stores two or more temperature control models that are previously created, a temperature controller which controls a temperature of the heating unit; and an apparatus controller which controls the temperature controller and the memory unit, wherein the apparatus controller selects a temperature control model among the two or more temperature control models according to desired heat treatment conditions, and wherein the temperature controller reads out the selected temperature control model from the memory unit to control the heating unit.

Abstract: A high speed cooking apparatus employing a low voltage high current system for heating foods employing a novel wire mesh heating element. The system herein described providing the benefits of high speed cooking like that further described by U.S. Provisional Application 60/822,028 filed on Aug. 10, 2006, but yet providing significant cost benefit and simplicity over said system.

Abstract: A wafer temperature measurement tool for measuring the surface temperature of a semiconductor wafer. The tool can be used to measure temperature on different parts of the wafer to provide a high resolution temperature distribution map. The tool includes an internal calibrated weight that is slidably disposed within a tool body. A temperature sensor is attached to the bottom of the weight. Ceramic stands are attached to the bottom of the tool body. Gravity pulls down on the weight such that the temperature sensor contacts the wafer when the ceramic stands of the tool body are placed on the wafer.

Abstract: A reaction chamber including a substrate supporting member positioned within the reaction chamber, the reaction chamber having a first region and a second region, a shield positioned within the second chamber and movable with the substrate supporting member, and wherein the shield is adjacent at least a bottom surface of the substrate supporting member.

Abstract: An apparatus for fabricating thin film photovoltaic devices includes a deposition chamber for loading a pair of substrates. Two heater platens in a side-by-side configuration with a middle gap form intimate contact with the pair of substrates. Each heater platen has a second width and a second length respectively made smaller than the first width and the first length to allow the substrate to fully cover the heater platen for preventing formation of edge lip due to coating buildup in a peripheral edge region. The apparatus further includes a shield structure which covers both the middle gap and all outer peripheral side regions of the side-by-side configuration of the two heater platens for preventing coating buildup and guiding a downstream flow.

Abstract: In a method for manufacturing an epitaxial wafer by which an epitaxial layer is formed on a surface of a silicon wafer arranged in a reactor by distributing a raw material gas in the reactor, a temperature of a susceptor at the time of carrying the silicon wafer into the reactor is adjusted in accordance with a resistivity of the silicon wafer. There is provided the method for manufacturing an epitaxial wafer, the method enabling reduction in generation of particles from friction of a back surface edge portion and the susceptor due to warpage of the wafer caused at the time of carriage into the reactor and occurrence of scratches on the silicon wafer back surface edge portion without requiring a complicated apparatus.

Abstract: Provided is a substrate processing apparatus including a reaction chamber configured to heat a substrate; a transfer chamber configured to transfer the heated substrate; a refrigerant flow path installed in the reaction chamber; a refrigerant flow path installed in the reaction chamber; a refrigerant supply unit installed in the refrigerant flow path; a refrigerant exhaust unit installed in the refrigerant flow path; a transfer chamber refrigerant supply unit installed in the transfer chamber; a transfer chamber refrigerant exhaust unit installed in the transfer chamber; a heat exchanger connected to the refrigerant exhaust pipe and the transfer chamber refrigerant exhaust unit; a turbine connected to the heat exchanger; a generator connected to the turbine; and a control unit configured to control the refrigerant supply unit and the transfer chamber refrigerant supply unit.

Abstract: A system and method for displaying the actual position of one or more food items on a conveyorized oven system on a display monitor. Digital images of each food item are captured, stored and processed into positional imaging data using data transmitted from sensors adjacent to the conveyorized oven system. Characteristic data for each food item may be associated with the positional imaging data. The characteristic and positional imaging data of the food items may be stored or communicated to a display monitor for the user to view.

Abstract: A surface of a semiconductor wafer with a gate of a high dielectric constant film formed thereon is heated to a target temperature for a short time by irradiating the surface with a flash of light. This promotes the crystallization of the high dielectric constant film while suppressing the growth of an underlying silicon dioxide film. Subsequently, the temperature of the semiconductor wafer subjected to the flash heating is maintained at an annealing temperature by irradiating the semiconductor wafer with light from halogen lamps. An annealing process after the flash heating is performed in an atmosphere of a gas mixture of hydrogen gas and nitrogen gas. The annealing process is performed on the semiconductor wafer in the atmosphere of the hydrogen-nitrogen gas mixture, so that defects present near the interfaces of the high dielectric constant film are eliminated by hydrogen termination.

Abstract: Radiant energy from a semiconductor wafer which is determined from the theoretical value of black body radiation and the actually measured result of an output from a photodiode are brought into correspondence with each other, and a table showing a correlation therebetween is acquired and stored on a magnetic disk. When a semiconductor wafer to be treated is irradiated with flashes of light from flash lamps, the photodiode receives radiant light emitted from the semiconductor wafer. A controller determines, from the output from the photodiode, the radiant energy emitted per unit time from the semiconductor wafer irradiated with flashes of light, based on the acquired table. The controller further determines the surface temperature of the semiconductor wafer from the determined radiant energy.

Abstract: A processing tool includes a chamber configured to receive a wafer, the chamber having a sidewall and a sidewall heating source configured to heat the sidewall of the chamber. The processing tool further includes a first heating source configured to provide energy to an interior of the chamber through a top surface of the chamber and a second heating source configured to provide energy to the interior of the chamber through a bottom surface of the chamber. The sidewall heating source is separate from the first heating source and the second heating source.

Abstract: The installation (10) is adapted for the heat treatment of objects, such as plastic preforms (17), and comprises a reflective device exhibiting a plurality of elongated and opened IR-reflective cavities stacked one onto the other according to a stacking axis and arranged to lodge elongated IR lamps (16) within, where the aperture of each cavity faces generally a main axis parallel to the stacking axis along which the object would be placed. The reflective device (20) further comprises protrusions separating the cavities one to the other and extending generally transversal/transverse to the stacking axis, the reflective device being made as at least one integral block of a heat-conductive material. The cavities may each comprise a curved bottom portion and two opposite side surfaces provided with respective longitudinal breaks of slope at a junction with the curved bottom.

Abstract: Embodiments of the present invention provide thermal processing chambers including a drive mechanism and a heating assembly disposed on opposite sides of a substrate support assembly. Particularly, the heating assembly is disposed below the substrate support assembly to process a substrate with a device side facing up and the drive mechanism is disposed above the substrate assembly.

Abstract: After the completion of the transport of a semiconductor wafer into a chamber, the flow rate of nitrogen gas supplied into the chamber is decreased. In this state, a preheating treatment and flash irradiation are performed. The flow rate of nitrogen gas supplied into the chamber is increased when the temperature of the front surface of the semiconductor wafer is decreased to become equal to the temperature of the back surface thereof after reaching its maximum temperature by the irradiation of the substrate with a flash of light. Thereafter, the supply flow rate of nitrogen gas is maintained at a constant value until the semiconductor wafer is transported out of the chamber. This achieves the reduction in particles deposited on the semiconductor wafer while suppressing adverse effects resulting from the nonuniform in-plane temperature distribution of the semiconductor wafer.

Abstract: The invention provides a compact multistage furnace of which the installation area in a factory is decreased. A multistage furnace is configured by piling up a plurality of furnace units in the vertical direction. Each of the furnace units includes an upper heater and a lower heater layered in the vertical direction and holding a heat insulator therebetween, a support pipe disposed on one end of the upper heater and extending in the horizontal direction, a support pipe disposed on other end of the upper heater and extending in the horizontal direction, and a plurality of work support bars mounted over the support pipes. The back surface of a work supported by the work support bars is opposed to the upper heater and the front surface of the work is opposed to the lower heater of the adjacent furnace unit disposed above.

Abstract: A coated film drying furnace for drying a coated film inside a furnace body by conveying the coated film therein, the coated film having an absorption spectrum for electromagnetic waves of 3.5 ?m or less and having hydrogen bonds, such as an electrode coated film for lithium ion battery. Infrared heaters provided inside a furnace body have outer circumferences of filaments concentrically covered by tubes that function as a low pass filter, and have a structure in which a fluid flow passage is formed between the plurality of tubes. Due to this, a temperature rise in the furnace is controlled so as to prevent explosion of an organic solvent vapor, and the coated film is efficiently heated and dried by intensively radiating near infrared rays of 3.5 ?m or less that have superior ability to cut off the intermolecular hydrogen bonds onto a work.

Abstract: A thermal processing apparatus is provided in accordance with some embodiments. The thermal processing apparatus includes a heating source for transmitting incident radiation to a work piece having a circuit pattern formed on a front surface; a radiation sensor configured to receive light radiated from the front surface of the work piece; and a controller coupled to the radiation sensor, the controller being designed to control the heating source to reduce temperature variation of the work piece.

Abstract: A substrate processing apparatus includes a heater having an infrared lamp and a housing for heating an upper surface of a substrate held by a substrate holding mechanism with the heater in opposed relation to the upper surface. A heater cleaning method includes locating the heater at a position above a lower nozzle in opposed relation to a first spout of the lower nozzle, the lower nozzle being in opposed relation to a lower surface of the substrate held by the substrate holding mechanism, and a lower cleaning liquid spouting step of supplying a cleaning liquid to the lower nozzle to spout the cleaning liquid upward from the first spout with no substrate being held by the substrate holding mechanism to thereby supply the cleaning liquid to an outer surface of the housing of the heater located at the heater cleaning position.

Abstract: This invention discloses a reaction apparatus for wafer treatment, an electrostatic chuck and a wafer temperature control method, in the field of semiconductor processing. The electrostatic chuck comprises an insulating layer for supporting a wafer and a lamp array disposed in the insulating layer. Each lamp of the lamp array can be independently controlled to turn on and off and/or to adjust the output power. By controlling the on/off switch and/or output power of each lamp of the lamp array the temperature of the wafer held on the ESC is adjusted and temperature non-uniformity can be more favorably adjusted, greatly improving wafer temperature uniformity, particularly alleviating non-radial temperature non-uniformity.

Abstract: Methods and apparatus are provided for reducing the thermal signal noise in process chambers using a non-contact temperature sensing device to measure the temperature of a component in the process chamber. In some embodiments, a susceptor for supporting a substrate in a process chamber includes a first surface comprising a substrate support surface; and a second surface opposite the first surface, wherein a portion of the second surface comprises a feature to absorb incident radiant energy.

Abstract: A taper assembly includes a taper housing comprising a coaxial conical shaped opening converging into a cylindrically shaped opening. A rotation housing is coupled to the taper housing by a coupling member. The rotation housing comprises a plurality of vent holes configured to vent gas through the taper assembly. A susceptor support assembly includes a central shaft having a base with a tapered bottom, a susceptor support, and a susceptor. The susceptor support includes a plurality of arms extending outwardly from the central shaft, wherein the central shaft extends through a central opening in the susceptor support. The plurality of arms are configured to house a plurality of balls in indentations in the arms. The susceptor includes a disk-shaped body having a plurality of grooves at an edge of the body. The plurality of grooves are configured to contact the plurality of balls at two or more contact points.

Abstract: The present invention generally relates to methods of cooling a substrate during rapid thermal processing. The methods generally include positioning a substrate in a chamber and applying heat to the substrate. After the temperature of the substrate is increased to a desired temperature, the substrate is rapidly cooled. Rapid cooling of the substrate is facilitated by increasing a flow rate of a gas through the chamber. Rapid cooling of the substrate is further facilitated by positioning the substrate in close proximity to a cooling plate. The cooling plate removes heat from substrate via conduction facilitated by gas located therebetween. The distance between the cooling plate and the substrate can be adjusted to create a turbulent gas flow therebetween, which further facilitates removal of heat from the substrate. After the substrate is sufficiently cooled, the substrate is removed from the chamber.

Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.