Abstract: A radio-frequency heating apparatus includes a radio-frequency power generation unit (120), variable phase shift units (142a to 142d) that change a phase of a radio-frequency power generated by the radio-frequency power generation unit (120), radio-frequency power units (140a to 140d), and a control unit (110) that sets a frequency for the radio-frequency power generation unit (120) and a phase shift amount for the variable phase shift units (142a to 142d). Backward power detection units in the radio-frequency power units (140a to 140d) individually detect a reflected power and a through power at the frequency set for the radio-frequency power generation unit (120) by the control unit (110), and the control unit (110) determines a frequency for the radio-frequency power generation unit (120) and a phase shift amount for the variable phase shift units (142a to 142d) for heating the object, on the basis of the detected amplitude and phase of the reflected wave and the through wave.

Abstract: The invention relates to a vacuum processing system for processing a substrate (2), with an enclosure (1) for carrying the substrate (2) to be treated in a substrate plane (4), whereby the enclosure (1) comprises a first reflecting means (6) and a heating means (5) having a first plane surface (10) and an opposed second plane surface (11), the heating means (5) is configured for irradiating heating energy only via the first surface (10) and/or via the second surface (11), the first reflecting means (6) is configured for reflecting the heating energy irradiated by the heating means (5) onto the substrate plane (4), and the heating means (5) is arranged such that the first surface (10) faces towards the first reflecting means (6) and the second surface (11) faces towards the substrate plane (4).

Abstract: A flash heating part in a heat treatment apparatus includes 30 built-in flash lamps, and irradiates a semiconductor wafer held by a holder in a chamber with a flash of light. Thirty switching elements are provided in a one-to-one correspondence with the 30 flash lamps. Each of the switching elements defines the waveform of current flowing through a corresponding one of the flash lamps by intermittently supplying electrical charge thereto. Radiation thermometers measure an in-plane temperature distribution of the semiconductor wafer during flash irradiation. Based on the results of measurement with the radiation thermometers, a controller individually controls the operations of the 30 switching elements to individually define the light emission patterns of the 30 flash lamps.

Abstract: A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. The surface temperature of the silicon substrate implanted with impurities is therefore increased to be higher than that in a case where no thin film is formed, and the sheet resistance value can be thereby decreased. When the semiconductor wafer with the carbon thin film formed thereon is irradiated with flash light in high concentration oxygen atmosphere, since the carbon of the thin film is oxidized to be vaporized, removal of the thin film is performed concurrently with flash heating.

Abstract: Embodiments of the invention relate to a dome assembly. The dome assembly includes an upper dome comprising a central window, and an upper peripheral flange engaging the central window at a circumference of the central window, wherein a tangent line on an inside surface of the central window that passes through an intersection of the central window and the upper peripheral flange is at an angle of about 8° to about 16° with respect to a planar upper surface of the peripheral flange, a lower dome comprising a lower peripheral flange and a bottom connecting the lower peripheral flange with a central opening, wherein a tangent line on an outside surface of the bottom that passes through an intersection of the bottom and the lower peripheral flange is at an angle of about 8° to about 16° with respect to a planar bottom surface of the lower peripheral flange.

Abstract: A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer.

Abstract: The back surface of a substrate having a front surface coated with a resist film is irradiated with flashes of light emitted from flash lamps. Heat conduction from the back surface of the substrate abruptly raised in temperature by the irradiation with flashes of light toward the front surface thereof occurs to heat the resist film formed on the front surface of the substrate, so that a post-applied bake process is performed. After the completion of the post-applied bake process, a cooling plate cools down the substrate. Regardless of the type of resist film formed on the front surface of the substrate, the substrate has a constant absorptance of flashes of light to allow the resist film to be heated to a constant treatment temperature, because the back surface of the substrate is irradiated with flashes of light.

Abstract: A plasma poling device includes a holding electrode (4) which is disposed in a poling chamber (1) and holds a substrate to be poled (2), an opposite electrode (7) which is disposed in the poling chamber and disposed facing the substrate to be poled held on the holding electrode, a power source (6) electrically connected to one electrode of the holding electrode and the opposite electrode, a gas supply mechanism supplying a plasma forming gas into a space between the opposite electrode and the holding electrode, and a control unit controlling the power source and the gas supply mechanism. The control unit controls the power source and the gas supply mechanism so as to form a plasma at a position facing the substrate to be poled and to apply a poling treatment to the substrate to be poled.

Abstract: Methods and apparatus for controlling the temperature of multi-zone heater in a process chamber are provided herein. In some embodiments, a method is provided to control a multi-zone heater disposed in a substrate support, wherein the multi-zone heater has a first zone and a second zone. In some embodiments, the method may include measuring a current drawn by the first zone at a first time; measuring a voltage drawn by the first zone at the first time; calculating the resistance of the first zone based upon the measured current and voltage drawn by the first zone at the first time; determining a temperature of the first zone based upon a predetermined relationship between the resistance and the temperature of the first zone; and adjusting the temperature of the first zone in response to the temperature determination.

Abstract: The present invention discloses an apparatus for baking a substrate. The apparatus includes a supporting platform, a plurality of supporting pins, a heating unit, and a thermal insulation layer. The supporting platform has a supporting surface and a bottom surface. The supporting pins are disposed in the supporting platform, and the supporting pins are capable of movably protruding from the supporting surface to lift the substrate up. The heating unit is utilized to heat the substrate. The thermal insulation layer is disposed opposite to the bottom surface of the supporting platform and utilized to prevent the heating unit from heating the supporting platform. The present invention further discloses a method for baking a substrate, and the method can effectively prevent a Mura defect appearing on the substrate.

Abstract: Embodiments of the present invention provide apparatus and method for reducing heating source radiation influence in temperature measurement during thermal processing. In one embodiment of the present invention, background radiant energy, such as an energy source of a thermal processing chamber, is marked within a selected spectrum, a characteristic of the background is then determined by measuring radiant energy at a reference wavelength within the selected spectrum and a comparing wavelength just outside the selected spectrum.

Abstract: A susceptor that holds a semiconductor wafer placed thereon is capable of moving up and down inside a chamber. For preheating with a halogen lamp, the susceptor moves to a preheating position. The preheating position is a height of the susceptor that achieves the most uniform in-plane illumination distribution of light emitted from the halogen lamp and applied to the semiconductor wafer. After the preheating is finished, the susceptor moves to a flash heating position for irradiation with a flash from a flash lamp. The flash heating position is a height of the susceptor that achieves the most uniform in-plane illumination distribution of a flash emitted from the flash lamp and applied to the semiconductor wafer.

Abstract: An oven is configured with a cooking cavity for receiving a cooking load, a circuit for current supplied by one or more stored energy devices such as rechargeable batteries, and a heater comprising one or more radiant lamps to be driven by the current, the one or more radiant lamps being sized and positioned for heating the cooking load. The lamps are driven by current discharged from the batteries to radiantly heat a cooking load. An application of this stove configuration is in a toaster which is capable of toasting slices of bread in a matter of seconds.

Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

Abstract: Embodiments of the invention generally contemplate an apparatus and method for monitoring and controlling the temperature of a substrate during processing. One embodiment of the apparatus and method takes advantage of an infrared camera to obtain the temperature profile of multiple regions or the entire surface of the substrate and a system controller to calculate and coordinate in real time an optimized strategy for reducing any possible temperature non-uniformity found on the substrate during processing.

Abstract: A surface heating device for a substrate treatment device with increased power density and improved homogeneity of heat radiation includes a jacket tube heater with straight tube sections and bent tube sections in which straight tube sections are arranged parallel to each other in a main plane and straight tube sections are connected to each other by bent tube sections, so that at least part of the bent tube sections are aligned sloped relative to the main plane.

Abstract: Embodiments of edge rings for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, an edge ring for a semiconductor process chamber may include an annular body having a central opening, an inner edge, an outer edge, an upper surface, and a lower surface, an inner lip disposed proximate the inner edge and extending downward from the upper surface, and a plurality of protrusions extending upward from the inner lip and disposed along the inner edge of the annular body, wherein the plurality of protrusions are arranged to support a substrate above the inner lip and over the central opening, wherein the inner lip is configured to substantially prevent light radiation from travelling between a first volume disposed above the edge ring and a second volume disposed below the edge ring when a substrate is disposed on the plurality of protrusions.

Abstract: Apparatus for providing heat energy to a process chamber are provided herein. The apparatus may include a process chamber body of the process chamber, a solid state source array having a plurality of solid state sources, disposed on a first substrate, to provide heat energy to the process chamber to heat a target component disposed in the process chamber body, and at least one reflector disposed on the first substrate proximate to one or more of the plurality of solid state sources to direct heat energy provided by the one or more of the plurality of solid state sources towards the target component.

Abstract: Embodiments of a lamphead and apparatus utilizing same are provided. In some embodiments, a lamphead for thermal processing may include a monolithic member having a plurality of coolant passages and a plurality of lamp passages and reflector cavities, wherein each lamp passage is configured to accommodate a lamp and each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for the lamp, and wherein the plurality of coolant passages are disposed proximate to the plurality of lamp passages; and at least one heat transfer member extending from the monolithic member into each coolant passage, wherein the at least one heat transfer member extends into each coolant passage up to the full height of each coolant passage. The lamphead may be disposed in an apparatus comprising a process chamber having a substrate support, wherein the lamphead is positioned to provide energy to the substrate support.

Abstract: The invention provides a compact multistage furnace of which the installation area in a factory is decreased. A multistage furnace is configured by piling up a plurality of furnace units in the vertical direction. Each of the furnace units includes an upper heater and a lower heater layered in the vertical direction and holding a heat insulator therebetween, a support pipe disposed on one end of the upper heater and extending in the horizontal direction, a support pipe disposed on other end of the upper heater and extending in the horizontal direction, and a plurality of work support bars mounted over the support pipes. The back surface of a work supported by the work support bars is opposed to the upper heater and the front surface of the work is opposed to the lower heater of the adjacent furnace unit disposed above.

Abstract: Infrared heating panels are provided with an electrically insulative substrate that carries one or more infrared heating elements. Each heating element includes an elongated first segment attached to a first surface of the substrate and an elongated second segment electrically connected in series with the first segment. At least the first segment is a strip of an electrically resistive material adapted to emit infrared radiation in response to a current. The second segment is attached to the second surface of the substrate opposite from and in a parallel arrangement with the first segment such that a first current flowing through the heating element flows through the first segment in a first direction relative to the substrate and flows through the second segment in a second direction opposite the first direction. Saunas, heating systems, and methods for reducing electromagnetic emissions in an infrared sauna are also provided.

Abstract: An infra-red heater assembly takes on the conditions that afflict buildings: bed bugs, termites, other insects, molds, bacteria, and the like, and their resulting odors, and other contaminants. The assembly includes a portable electric infra-red emitting panel system with vertically stacked panels that distribute heat energy to the entire height of a wall. Removable panel covers over the infra-red heating elements protect them from damage during transport and when opened, act as deflectors, to direct, the radiant energy, widthwise, to restrict the line of site energy transferred to a wall. The heating panels are regulated by room air and wall temperature sensors to prevent structural damage and fire during usage of the invention. The infra-red heater may be pivotally mounted within its supporting structure so as to direct heat in various angular directions within the building being treated.

Abstract: To provide a temperature control method capable of equivalently maintaining qualities of substrates even when treated substrates are continuously carried in a treatment container in the case in which activation annealing treatment is performed by an electron impact heating method.

Abstract: One embodiment relates to an apparatus for vacuum-compatible substrate thermal management. The apparatus includes a load-lock chamber coupled to a vacuum chamber, a light-emitting diode array, and a substrate stage. The load-lock chamber is configured to hold a substrate prior to the substrate being transferred into the vacuum chamber, and a substrate stage is configured to hold the substrate in the vacuum chamber. The light-emitting diode array is configured to warm the substrate while the substrate is in the load-lock chamber. Other features, aspects and embodiments are also disclosed.

Abstract: An infrared firing furnace includes a case-integrated cooling system to provide high performance cooling as the first step in the cooling process. The cooling system includes a cooling manifold integrated into, and made from, the same case material as the adjacent firing zone. As the cooling system is made from the same material as the rest of the case, it can handle being exposed to higher temperatures. The cooling system is positioned such that the plane of its outlet is at a specific clearance level relative to the product passing underneath. High pressure cooling jets of air are directed downward toward the products as they pass under the cooling manifold in order to quickly bring the temperature of the products down from the much higher firing temperature, and minimize the dwell time of the product at the higher temperature.

Abstract: A method of heat-treating a workpiece includes generating an initial heating portion and a subsequent sustaining portion of an irradiance pulse incident on a target surface area of the workpiece. A combined duration of the initial heating portion and the subsequent sustaining portion is less than a thermal conduction time of the workpiece. The initial heating portion heats the target surface area to a desired temperature and the subsequent sustaining portion maintains the target surface area within a desired range from the desired temperature. Another method includes generating such an initial heating portion and subsequent sustaining portion of an irradiance pulse, monitoring at least one parameter indicative of a presently completed amount of a desired thermal process during the irradiance pulse, and modifying the irradiance pulse in response to deviation of the at least one parameter from an expected value.

Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.

Abstract: Systems and methods are provided for controlling infrared radiation (IR) sources of a sauna including tuning IR wavelength-ranges and radiated power-levels of IR sources, and directing IR to locations on a user's body. In one illustrative embodiment, a sauna may be provided having adjustable heat sources to emit IR at any wavelength resulting in a desirable radiation treatment for the sauna user. In another illustrative embodiment, a method is provided for tuning IR sources in a sauna.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: A cooker and a controlling method for the same are provided. A carbon heater has a wavelength bandwidth of 1.5˜2.5 ?m where a radiant energy is maximum, and the carbon heater provides the radiant energy into a cavity in order to heat food disposed therein.

Abstract: A method and apparatus for thermally processing a substrate is provided. In one embodiment, a method for thermally treating a substrate is provided. The method includes transferring a substrate at a first temperature to a substrate support in a chamber, the chamber having a heating source and a cooling source disposed in opposing portions of the chamber, heating the substrate to a second temperature during a first time period while the substrate is disposed on the substrate support, heating the substrate to a third temperature during a second time period while the substrate is disposed on the substrate support, and cooling the substrate in the chamber to a fourth temperature that is substantially equal to the second temperature during the second time period.

Abstract: A conveyor oven has several heating zones. Each heating zone is comprised of one or more infrared emitters that are configured to emit a spectrum of infrared wavelengths that varies in intensity and spectrum over time. The spectra of emitted infrared wavelengths in each zone can have the same or different profile. Zones are regions wherein infrared emitters are configured and operated to emit the same or substantially the same infrared energy wavelengths and intensity levels across an IR spectrum. Access to the infrared emitters and the conveyor is provided by one or more access or maintenance ports formed into a side of the conveyor oven. Temperature control inside the oven is effectuated by venting hot air through air vents formed into the oven sides and/or top.

Abstract: Multi-zone IR solar cell processing furnaces using a single, full-width conveyor belt; selected zones are divided into multiple lanes by upper or/and lower longitudinal divider walls, and heated by high intensity radiation IR lamps backed by a flat plate of ultra-high reflectance ceramic material. Lamp numbers and spacing in each zone/lane can be varied. Power to each lamp, or zone/lane lamp array, both upper and lower, is individually and independently controlled to provide infinite number of temperature profiles in each heating zone/lane. In multi-lane zones the IR lamps are folded, the inner ends being supported by the lane dividers. Lamp external power leads are both accessible from one side of the furnace. The lamp internal filaments include non-radiant and radiant sections arranged so that a pair of radiant sections are aligned in the lamp-folded configuration and disposed over the full width of the solar cell wafers.

Abstract: When a semiconductor wafer is preheated by halogen lamps, the temperature of a peripheral portion of the semiconductor wafer is lower than that of a central portion thereof. A laser light emitting part disposed immediately under the center of the semiconductor wafer is rotated about the center line of the semiconductor wafer, while laser light is directed from the laser light emitting part toward the peripheral portion of the semiconductor wafer. Thus, the irradiation spot of the laser light exiting the laser light emitting part swirls around along the peripheral portion of the back surface of the semiconductor wafer so as to draw a circular trajectory. As a result, the entire peripheral portion of the semiconductor wafer at a relatively low temperature is uniformly heated. This achieves a uniform in-plane temperature distribution of the semiconductor wafer.

Abstract: A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.

Abstract: Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.

Abstract: A nozzle housing assembly, which is used in a convection heating furnace for a heat treatable glass sheet. The nozzle housing assembly comprises an elongated enclosure, at least one elongated heating resistance in the enclosure for heating convection air, and orifices in a bottom surface of the enclosure for blasting heated convection air against the glass sheet. The enclosure is divided with a flow-throttling partition into a top supply duct and a bottom nozzle box, the heating resistances being housed in the latter. Flow-throttling openings present in the partition are positioned to comply with the location and shape of the heating resistances.

Abstract: Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a substrate support surface and a shaft; an RF electrode disposed in the substrate support proximate the substrate support surface to receive RF current from an RF source; a heater disposed proximate the substrate support surface to provide heat to a substrate when disposed on the substrate support surface, the heater having one or more conductive lines to provide power to the heater; a thermocouple to measure the temperature of a substrate when disposed on the substrate support surface; and a conductive element having an interior volume with the one or more conductive lines and the thermocouple disposed through the interior volume, the conductive element coupled to the RF electrode and having an electric field of about zero in the interior volume when RF current is flowed through the conductive element.

Abstract: A surface of a semiconductor wafer with a gate of a high dielectric constant film formed thereon is heated to a target temperature for a short time by irradiating the surface with a flash of light. This promotes the crystallization of the high dielectric constant film while suppressing the growth of an underlying silicon dioxide film. Subsequently, the temperature of the semiconductor wafer subjected to the flash heating is maintained at an annealing temperature by irradiating the semiconductor wafer with light from halogen lamps. An annealing process after the flash heating is performed in an atmosphere of a gas mixture of hydrogen gas and nitrogen gas. The annealing process is performed on the semiconductor wafer in the atmosphere of the hydrogen-nitrogen gas mixture, so that defects present near the interfaces of the high dielectric constant film are eliminated by hydrogen termination.

Abstract: A rapid thermal process reactor includes a vessel having a dome assembly. The vessel bounds a reactor chamber for rapid thermal processing of one or more substrates. The dome assembly includes a low profile dome and a flange surrounding and abutting the low profile dome. The flange includes a top surface; a bottom surface, removed from and opposite the top surface; an outer circumferential edge surface connecting the top surface and the bottom surface; and an inner edge surface, opposite and removed from said outer circumferential edge, including a portion abutting said low profile dome. The rapid thermal process reactor also includes a radiant heat source; a gas ring mounted about a sidewall of the vessel; a gas ring shield mounted as part of the sidewall of the vessel; a clamp ring to clamp the dome assembly in place; and a clamp ring shield mounted on the clamp ring.

Abstract: A heat treatment apparatus includes a chamber for receiving a substrate therein, and a measurement part for measuring an air particle concentration in a processing space provided in the chamber. An air particle concentration in the processing space provided in the chamber is measured by the measurement part. The air particle concentration is correlated with the number of particles attached to a substrate received in the chamber. Accordingly, by conducting a particle test after the air particle concentration in the processing space is lowered to an air particle concentration corresponding to the number of particles existing on the substrate which can pass the particle test, the number of times the particle test should be conducted after maintenance of the heat treatment apparatus can be reduced.

Abstract: A substrate surface treatment equipment includes a chamber, a ultraviolet ray lamp, an infrared heating element, a blackbody radiation plate and a vacuum extractor. The equipment can do the substrate surface treatment. The substrate surface treatment equipment can wash or modify the substrate surface. Therefore, after the washing and modifying of the substrate surface, the substrate surface can include a better adhesion when processing a thin film deposition or a colloid suspension coating.

Abstract: A UV lamp assembly having rotary shutters. Each rotary shutter has a concave wall with a reflective concave surface. The rotary shutters can be collectively rotated between an open position and an closed position. At the open position, the rotary shutters do not block UV light of UV lamps from leaving the UV lamp assembly while at the closed position the rotary shutters block UV light from leaving the UV lamp assembly.

Abstract: Apparatuses, methods, and computer-storage media provide for a sauna that is operable to provide a programmable sauna experience to a user. A sauna may include mechanisms for monitoring biological data associated with a user, mechanisms for generating and updating training programs associated with a user, and mechanisms for communicating with remote devices to send and receive information and updates. A sauna may be provided having adjustable zoned heating and self-diagnostic capabilities.

Abstract: A thermal processing chamber with a dielectric barrier discharge (DBD) lamp assembly and a method for using the same are provided. In one embodiment, a thermal processing chamber includes a chamber body and a dielectric barrier discharge lamp assembly. The dielectric barrier discharge lamp assembly further comprises a first electrode, a second electrode and a dielectric barrier. The dielectric barrier discharge lamp assembly is positioned between the first electrode and the second electrode. The dielectric barrier defines a discharge space between the dielectric barrier and the second electrode. A circuit arrangement is coupled to the first and second electrodes, and is adapted to operate the dielectric barrier discharge lamp assembly.

Abstract: The present invention relates to an apparatus for heat-treating a substrate, and more particularly to an apparatus for substrate treatment to perform a heat treatment of a substrate for a flat panel display panel. An apparatus for substrate treatment according to an embodiment of the present invention comprises a processing chamber having a substrate treatment space; a heating housing having a heating lamp that emits radiant energy and a reflecting block that reflects radiant energy emitted from the heating lamp; and a window that maintains a sealing between the processing chamber and the heating housing and transmits the radiant energy to a substrate.

Abstract: Methods and apparatus for heating a substrate in a process chamber are provided herein. In some embodiments, an apparatus for heating a substrate in a process chamber includes a lamp group comprising one or more sets of lamps to provide radiant energy to heat a substrate when disposed in the process chamber, wherein each set of lamps comprises a plurality of lamps wired in series, and wherein each set of lamps is wired in parallel with respect to other sets of the one or more sets of lamps; an alternating current (AC) power source to produce an AC input waveform; and a lamp driver to power the lamp group, the lamp driver including a rectifier coupled to the AC power source to convert the AC input waveform to DC voltage; and a direct current to direct current (DC/DC) converter to reduce voltage of the DC power.

Abstract: A heater block according to the present invention comprises a light-emitting lamp; a concave reflecting member that is placed opposite the lamp and has a concave reflecting surface at one surface faced with the lamp; a lens module that is inserted into the concave reflecting member and has at least one lens; and a flat reflecting member that is placed opposite the lens module. According to embodiments of the present invention, light emitted from the lamp is reflected by the concave reflecting member. Then, light and heat are collected from the reflected light by the flat reflecting member and the lens module and are irradiated on a substrate. That is, light having energy greater than a conventional manner is irradiated on the substrate to enhance the instant heating temperature and temperature increasing rate of substrate and to increase a heat-focusing area. Therefore, it has an advantage that the productivity of semiconductor or display device manufacture that requires a rapid thermal process is improved.

Abstract: Provided is a method and system for controlling a spike anneal process on a substrate, comprising selecting one or more objectives, one or more absorbance layers, a technique of modifying absorption of the selected one or more absorbance layers, one or more wavelengths used in a heating device. A substrate modified with the selected technique of modifying absorption is provided. The spike anneal process is performed on the substrate using the selected heating device and selected spike anneal process variables. One or more of the spike anneal process variables, the selected technique of the modifying absorption, the selected one or more wavelengths, and/or the selected heating device are adjusted in order to meet the one or more objectives of the spike anneal process.

Abstract: High reflectance element IR lamp module and method of firing multi-zone IR furnaces for solar cell processing comprising lamps disposed backed by a flat or configured plate of ultra-high reflectance ceramic material. Optionally, the high reflectance plate can be configured with ripples or grooves to isolate each lamp from adjacent lamps in the process zone. Furnace cooling air is exhausted and recycled upstream for energy conservation. Lamp spacing can be varied and power to each lamp individually controlled to provide infinite control of temperature profile in each heating zone. The high reflectance element may be constructed of dense ceramic fiber board, and then coated with high reflectance ceramic composition, and baked or fired to form the finished element.