Abstract: Wafer supports are provided that have a diameter smaller than the diameter of the wafer that they are to support in a wafer boat. The perimeter of the wafer support is preferably continuous, extending completely around in a 360° span, and is sized to fit between the protrusions supporting a particular wafer in a wafer cassette. To load the wafer boat, an end effector removes the wafer support from a wafer boat and moves the wafer support into a wafer cassette, where the end effector moves upward to seat a wafer upon the wafer support. The wafer and wafer support are then transported to the wafer boat and the wafer support and the wafer are lowered onto a wafer slot surface in a wafer slot in the wafer boat, to transfer the wafer support and wafer from the end effector to the wafer boat.

Abstract: The invention relates to a method for ceramizing starting glass of glass-ceramics into glass-ceramics, comprising at least the following steps: 1.1 the starting glass is heated from an initial temperature T1 to a temperature T2 which is disposed above the glass transformation temperature TG at which crystallization nuclei are precipitated; 1.2 the glass is held at the temperature T2 for a period t2 for the precipitation of crystallization nuclei; 1.3 the glass is further heated to a temperature T3 at which a crystal phase grows on the nuclei formed following step 1.1 and 1.2; 1.4 the glass is held for period t3 at a temperature T3 or heated during this period to a higher temperature T4 until the predetermined properties of the glass-ceramics have been reached; 1.5 the control of the temperature curve is performed with the help of a control loop comprising at least one temperature sensor for sensing the temperature and a heating unit as an actuator. The invention is characterized in that 1.

Abstract: The present invention is directed to a semiconductor thermal processing system and an apparatus for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a semiconductor thermal processing system and associated apparatus and method are disclosed which provides a segmented cold plate situated within a process chamber, wherein a plurality of segments of the cold plate are operable to radially translate between an engaged position and a disengaged position, wherein a substrate holder may pass between the plurality of segments when the segments are in the disengaged position. According to another aspect, an elevator is operable to linearly translate a substrate residing on a substrate holder between a heating position proximate to a heater assembly and a cooling position proximate to the segmented cold plate.

Abstract: An improved apparatus is provided for curing powdered coatings on the face of porous wood products, such as medium density fiberboard (MDF), wherein a pair of inclined infrared catalytic heaters are used to apply heat directly onto the side edges of the board. In addition, catalytic heaters that are normally used to heat and cure the face surface of the board are moved father back to reduce their effectiveness and to limit out-gassing of entrapped air from the inner low density core of the board. This arrangement also allows the coating to cure at the side edges of the board at approximately the same rate as the face of the board, promoting a more uniform curing of the powder coating.

Abstract: A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.

Abstract: A portable compact sauna wherein a user's body is warmed to sweating primarily by direct absorption of infrared radiation. Broad infrared radiation emitters or sources are placed around the inside of a narrow cabinet so as to be in close proximity to various parts of a seated user. Fins spaced apart less than finger-width on the emitters protect the user from contact with elevated temperatures in the emitters. The emitters, which lend themselves to easy cleaning, are heated by electric infrared heaters having a unique design which eliminates extremely-low-frequency (ELF) electromagnetic field (EMF) normally generated by AC energized electrical heater elements, to provide low extremely-low frequency EMF saunas able to utilize conventional-commercial electrical-energy sources. The emitters protect the heaters. Power wires for the heaters are arranged for low ELF EMF emission, too.

Abstract: An apparatus and a method for controlling the temperature of a substrate during substrate processing. The apparatus comprises a substrate table having a thermal surface supporting the substrate. The apparatus also comprises a first thermal assembly arranged in the substrate table and comprising a plurality of thermoelectric modules, each of the plurality of thermoelectric modules having a thermoelectric surfaces such that the plurality of thermoelectric modules defines a plurality of thermoelectric surfaces. In this apparatus, the plurality of thermoelectric surfaces is in thermal communication with the thermal surface and includes various shapes of thermoelectric surfaces, and the plurality of thermoelectric surfaces is configured to substantially completely underlie the thermal surface.

Abstract: A sealed line structure equipped with a heater block for a process chamber for use in manufacturing a semiconductor device is provided. The structure includes a housing member, a movement prevention member is constructed of a lock nut, a clamp ring and an elastic unit, and a power line or a thermocouple line is sealed by the configuration of the housing member, the movement prevention member, a cover member, and a connector member.

Abstract: A wafer processing method for use with a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The method enables performance of wafer processing while letting a wafer be mounted on the ceramic plate by a wafer transport. The method includes causing the wafer transport to transport the wafer onto the ceramic plate, pre-heating the wafer while the wafer is held on the ceramic plate for a predetermined length of time, and mounting the preheated wafer on the ceramic plate.

Abstract: The invention is a method of determining a set temperature profile of a method of controlling respective substrate temperatures of plurality of groups in accordance with respective corresponding set temperature profiles. The invention includes a first heat processing step of controlling respective substrate temperatures of a plurality of groups in accordance with respective predetermined provisional set temperature profiles for first-batch substrates that are classified into the plurality of groups, and of introducing a process gas to conduct a heat process to form films on the substrates; a first film-thickness measuring step of measuring a thickness of the films formed on the substrates; and a first set-temperature-profile amending step of respectively amending the provisional set temperature profiles based on the measured thickness, in such a manner that a thickness of films formed during a heat process is substantially the same between the plurality of groups.

Abstract: A method and apparatus for heating semiconductor wafers in thermal processing chambers. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral filter is included in the apparatus for filtering light being emitted by lamps used to heat the wafer at the wavelength at which the radiation sensing devices operate. The spectral filter includes a light absorbing agent such as a rare earth element, an oxide of a rare earth element, a light absorbing dye, a metal, or a semiconductor material.

Abstract: Upon performing a heat treatment by heating a semiconductor wafer positioned inside a reaction vessel with a heater provided outside the reaction vessel and supplying a processing gas into the reaction vessel, to increase the temperature inside the reaction vessel promptly to reach a processing temperature to be stabilized after the wafer is carried into the reaction vessel, and to reduce the burden to the operator caused in the heating control adjustment.

Abstract: A radiant oven comprises a radiant energy source configured to provide radiant electromagnetic energy, an insert configured to receive the radiant electromagnetic energy and convert the radiant electromagnetic energy into heat, and an additional element configured to receive the heat.

Abstract: A method of effecting high temperature vacuum heating and cooling suitable for conducting heat treatment to be performed on components used in a display apparatus. The heating/cooling method includes the steps of: heating a plate-like member placed in a reduced pressure atmosphere in a chamber by heating means opposed to the plate-like member; and cooling the plate-like member by a cooling plate which is opposed to the plate-like member, with the heating means therebetween, the cooling plate having a heat reflecting function. The cooling plate has an emissivity of not less than 0.50 but not more than 0.80 so as to minimize a sum of a requisite time for the heating step and a requisite time for the cooling step.

Abstract: A portable compact sauna wherein a user's body is warmed to sweating primarily by direct absorption of infrared radiation. Broad infrared radiation emitters or sources are placed around the inside of a narrow cabinet so as to be in close proximity to various parts of a seated user. Fins spaced apart less than finger-width on the emitters protect the user from contact with elevated temperatures in the emitters. The emitters, which lend themselves to easy cleaning, are heated by electric infrared heaters having a unique design which eliminates extremely-low-frequency (ELF) electromagnetic field (ELF) normally generated by AC energized electrical heater elements, to provide low extremely-low frequency EMF saunas able to utilize conventional-commercial electrical-energy sources. The emitters protect the heaters. Power wires for the heaters are arranged for low ELF EMF emission, too.

Abstract: A disc-type unit 10 adjusts temperature of a control face 14 by means of a heater 12 and coolant, with a hollow plate 11 to which the heater 12 is secured, a cavity 13 formed in the hollow plate 11 and a piping 20 for supplying the coolant to the cavity 13, the piping 20 opening in the cavity 13, and the coolant being jetted to a portion to which the heater 12 is secured or a portion in proximity thereto and which shows high temperature rise when energizing the heater 12.

Abstract: A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.

Abstract: A rapid thermal processing (RTP) system including a transmission pyrometer monitoring the temperature dependent absorption of the silicon wafer for radiation from the RTP lamps at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized. The transmission pyrometer may be used for closed loop control for thermal treatments below 500° C. or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure with a beam splitter dividing radiation from the wafer.

Abstract: A method, apparatus, and system including a reflecting device having a plurality of reflecting zones with associated reflectivities for reflecting light from a flash lamp, are described herein.

Abstract: A light irradiation heat treatment apparatus and method may use a plane-shaped light irradiation heating component, facing one surface of a workpiece supported in a furnace, to raise the temperature of the workpiece. The temperature of the workpiece is raised by setting an intensity distribution for light irradiated from the light irradiation heating component in accordance with the resistivity of the workpiece. Thereafter, the workpiece is irradiated with light having the set light intensity distribution to raise its temperature.

Abstract: The present invention is a thermal processing unit that includes: a tubular processing container; an object-to-be-processed holding unit that holds a plurality of objects to be processed in a tier-like manner and that can be inserted into and taken out from the processing container; a process-gas introducing unit that introduces a predetermined process gas into the processing container; a heating unit provided in the processing container, the heating unit heating the plurality of objects to be processed held by the object-to-be-processed holding unit when the object-to-be-processed holding unit is inserted into the processing container; and a container cooling unit that cools an outside wall surface of the processing container.

Abstract: A chamber has a wall surface fitted with a liner. The liner is removably provided to the chamber with no fixed relation therebetween. By simply opening a light source to remove a heat diffusion plate, a hot plate and a tubular member from the chamber, the liner can be easily detached accordingly from the chamber. When a semiconductor wafer cracks to litter the chamber with its fragments, the chamber can be easily cleaned by simply detaching the liner. The liner has an outer surface subjected to surface roughening by honing. When a flash lamp emits flashlight of considerably high intensity, the roughened outer surface of the liner serves to block this flashlight. As a result, the metal surface inside the chamber is prevented from being exposed to the flashlight emitted from the flash lamp.

Abstract: A heating stage according to the present invention comprises a flat stage portion on which a work piece is placed, a glass section having cylindrical portion in which two or more lamps are disposed as a heating unit, and a metal section having a cylindrical portion and a bottom portion forming an inner space by fixing the metal section and the glass section integrally wherein the inner space is under reduced pressure, and inert gas is filled.

Abstract: A processing system for thermally treating a substrate including a temperature controlled thermal treatment chamber and a temperature controlled substrate holder for supporting a substrate for thermal treatment. The substrate holder is thermally insulated from the thermal treatment chamber. A method for thermally treating a substrate is also provided.

Abstract: A heat treatment apparatus enables a rapid temperature rise of an object to be processed while giving an excellent economical efficiency. A heating unit heats an object to be heated by irradiating a light onto the object. A plurality of lamps are provided in a lamp house. The lamps include at least one first lamp and a plurality of second lamps each having an irradiation area smaller than that of the first lamp. The lamp house has a first lamp accommodation part at a center thereof and a second lamp accommodation part surrounding the first lamp accommodation part so that the first lamp accommodation part accommodates the first lamp and the second lamp accommodation part accommodates the second lamps.

Abstract: A magnetic ring of ferromagnetic is attached to a wire for supplying electric power to a flash lamp. The magnetic ring is removable and is easily attachable to and detachable from the wire. When turning on the flash lamp, a high electrical current momentarily flows through the wire and intense magnetic fields occur around the wire, so that the magnetic ring attached around the wire is momentarily magnetized. As the result, induced electromotive force is generated and the current momentarily flowing through the wire is weakened, so that the irradiation intensity of the flash lamp is slightly lowered. In contrast, if desired to slightly increase the irradiation intensity of the flash lamp, the magnetic ring may be detached from the wire.

Abstract: A radiant heating arrangement with a high infrared heating capacity for treatment chambers provides a vacuum-compatible radiant heating system with which it is possible to achieve considerable radiation levels reliably. The radiant heating arrangement includes a tube that is permeable to infrared radiation. The tube extends into the treatment chamber and penetrates the wall of the chamber with at least one end. A source of infrared radiation is situated inside the tube with the inside of the tube being isolated from the atmosphere inside the treatment chamber.

Abstract: The present invention comprises a fully automated, fabrication compliant furnace with the advantages of the horizontal and most of the advantages of the vertical furnace. One embodiment of the present invention is that it implements a multi-degree motion robot arm to move wafers from a loading area to a WIP station where the wafers are then loaded into wafer boats on a rotating cantilever system or directly onto a specialized and reconfigurable paddle designed to hold wafers. The wafers may be loaded in the horizontal processing position as well as the vertical processing position. Multiple levels of the semi-toroidal horizontal processors allow for multiple batches of wafers to be loaded, processed, cooled and unloaded by the robot arm. The present invention reduces the footprint of the traditional horizontal or vertical furnaces, increases capacity and throughput, and allows for direct tube transfer.

Abstract: After the maintenance of a heat treatment apparatus, a susceptor and a heating plate are moved upwardly and a nitrogen gas flow from an inlet toward an outlet passage is produced prior to heat treating a semiconductor wafer. In this state, flash lamps are turned on to cause momentary expansion and contraction of the gas in a chamber, thereby scattering particles deposited on a bottom plate, etc. The scattered particles are removed by the nitrogen gas passing through a bottom portion of the chamber and discharged through the outlet passage. The particles are easily removed due to the flash lamps being turned on a predetermined number of times at fixed time intervals while folowing the nitrogen gas. The heat treatment apparatus has a light-emission characteristic and easily removes the particles in the chamber.

Abstract: A substrate on which a resist solution is applied is mounted on a heating plate in a processing vessel. Then, a purge gas is supplied into the processing vessel, and heating is started. Above the mounting position of the substrate, a thickness detecting sensor for monitoring the thickness of the resist film formed on the surface of the substrate is provided. When the thickness becomes a predetermined value or less, a control part causes a lift pin to upwardly move so as to increase the distance between the substrate and the heating plate. Thus, the heating value applied to the substrate decreases, and thereafter, only the solvent is volatilized without having a bad influence on a polymer in the resist film.

Abstract: A substrate heater is provided including a plate-shaped ceramic base having a first side defining a convex heating surface on at least a portion of which a substrate is placed, a resistance-heating element embedded in the ceramic base, and a tubular member joined to a central portion on an opposed second side of the ceramic base. The convex heating surface has a central portion and a peripheral portion, wherein the height of the heating surface decreases from the central portion toward the peripheral portion thereof.

Abstract: A susceptor is formed with a cavity having a tapered surface and a receiving surface. The gradient ? of the tapered surface with respect to the receiving surface is set to at least 5° and less than 30°, so that a semiconductor wafer received by the susceptor can be located on the receiving surface through the tapered surface while the semiconductor wafer can be protected against excess stress also when the surface of the wafer abruptly thermally expands due to flashlight irradiation and can be prevented from cracking in thermal processing. Thus provided are a thermal processing susceptor and a thermal processing apparatus capable of preventing a substrate from cracking in thermal processing.

Abstract: A heat treatment apparatus configured to perform heat treatment on a wafer having a surface on which a coating film is formed, and includes: a holding member for holding the wafer almost horizontally; a chamber for housing the wafer held by the holding member; a hot plate having gas permeability and disposed above the wafer held by the holding member in the chamber so that the coating film formed on the wafer can be directly heated; and an exhaust port provided on the top face of the chamber and exhausting gas in the chamber. Gas generated from the coating film passes through the hot plate and is exhausted from the chamber. Accordingly, uniformity of a coating film is improved. As a result, CD uniformity may be improved, LER characteristics may be improved, and a smooth pattern side face may be obtained.

Abstract: The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber. Said process chamber is formed by the cavity of an especially multi-part graphite tube arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber, is enclosed by a high-frequency coil and the space between the reactor housing wall and the graphite tube is filled with a graphite foam sleeve. In order to improve heat insulation, the graphite foam sleeve is fully slit. The slot is wider than the maximum thermal elongation of the graphite foam sleeve in the peripheral direction to be expected when the device is heated up to process temperature.

Abstract: A deposition shield partially covering a substrate and having two zones of different thermal properties can provide minimal deposition on the shield together with minimal heat loss due to substrate contact. A zone of low thermal transmittivity is contact shielding the substrate, and due to the low thermal transmittivity property, there is minimal heat loss of the heated substrate, resulting in a more uniform temperature profile and a more uniform film deposition. A zone of high thermal transmittivity is in the rest of the shield, allowing thermal energy from the heated substrate to transmit through, resulting in a cooler shield and minimal deposition on the shield.

Abstract: As part of a system for processing a workpiece by applying a controlled heat to the workpiece, a heating arrangement includes an array of spaced apart heating elements for use in a confronting relationship with the workpiece to subject the workpiece to a direct radiation that is produced. A radiation shield includes a plurality of members supported for movement between (i) retracted positions, which allow the direct radiation to reach the workpiece, and (ii) extended positions, in which the plurality of members cooperate in way which serves to at least partially block the direct radiation from reaching the workpiece and to absorb radiation emitted and reflected by the workpiece and thereby achieve greater control of the time-temperature profile than previously obtainable. At least certain ones of the members move between adjacent ones of the heating elements in moving those certain members between the retracted and extended positions. Tubular, curved and plate-like member configurations can be used.

Abstract: In a system for thermal processing of a semiconductor substrate, a reflector plate has a stepped surface facing the substrate during heating and cooling of the substrate. The raised surface of the reflector plate has reduced reflectivity, providing advantages during, among other things, cooling of the substrate. The reflector plate also includes a number of recesses to which one or more pyrometers are coupled. These recesses have a highly reflective surface, providing advantages in the performance of the pyrometers.

Abstract: In a thermal processing apparatus (1), an upper opening (60) is closed by a transparent plate (61) and a light emitting part (5) emits light through the upper opening (60). Also provided are a susceptor (72) for supporting a substrate (9), a hot plate (71) for heating the susceptor (72) and a cover member (21) between the transparent plate (61) and the susceptor (72). The susceptor (72) has a recessed portion whose depth is larger than the thickness of the substrate (9), a lower surface of the substrate (9) is supported by a bottom surface of the recessed portion, and a periphery of the substrate (9) is surrounded by the side wall portion of the recessed portion. During processing of the substrate (9), the cover member (21) is moved down and brought into contact with an upper end of the side wall portion to close the recessed portion.

Abstract: A wafer, and a tungsten filament radiation heating source comprising at least one lamp arranged in a ring substantially surrounding the wafer edge. The radiation heating source irradiates the semiconductor wafer with radiation directed at the edge of the wafer, so that the radiation is adapted to penetrate the wafer edge and travel between the upper and lower surfaces into a central portion of the wafer sufficient to heat the wafer. The radiation-heating source may also have a reflector for reflecting radiation into the wafer edge, and at least one radiation and/or convection heating source mounted above or below the stage for directly heating one or both of the wafer upper and lower surfaces simultaneously with the radiation heating source surrounding the wafer.

Abstract: On the occasion of producing an image display apparatus, in order to suppress the bend and breakage of a substrate by uniformly heating the substrate which constructs a chamber which contains the image display apparatus, a plurality of heaters are located in opposition to both sides of the substrate in a vacuum chamber, which are further surrounded by a heat reflecting member, a partitioning member is located between end faces of the substrate and the heat reflecting member, and the substrate is heated.

Abstract: A thermal processing apparatus, performing processing accompanied with heating on a substrate, having an upper lamp group directed toward a prescribed direction and a lower lamp group perpendicularly intersecting with the upper lamp group is provided with a lower reflector between the upper and lower lamp groups. The lower reflector is so provided as to reflect light from lamps, included in the lower lamp group, present on both end regions in relation to the direction of arrangement. Thus, the thermal processing apparatus can efficiently irradiate an auxiliary ring with reflected light from the lower lamp group and improve temperature uniformity when heating the substrate.

Abstract: A novel apparatus for heat treating semiconductor wafers includes a heating device which comprises an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. The tuning devices adjust the overall irradiance distribution of the light energy sources. The tuning devices can either be active sources of light energy or passive sources which reflect, refract, or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: A lamp house stores twenty-seven flash lamps in such a state that a longitudinal direction of each of the twenty-seven flash lamps extends in a horizontal direction (Y-direction), and that the twenty-seven flash lamps are arranged in parallel to one another at equally spaced intervals in a horizontal direction (X-direction) perpendicular to the longitudinal direction. There is employed such a layout that a direction of substrate loading and unloading by a transport robot is perpendicular to the longitudinal direction of the flash lamps (the longitudinal direction of the lamp house). In this layout, the distance required for the transport robot to transfer a semiconductor wafer by slidingly moving a transport arm can be minimized to permit a compact transport robot, so that a thermal processing apparatus itself is compact and excellent in maintainability.

Abstract: Susceptor designs are provided for controlling damage to wafers, particularly during cold wafer drops-off on a hot susceptor. The designs include axisymmetric grid designs, such that thermal gradients are symmetrical in the circumferential (?) direction and the same traversing any particular radial line. The grids are preferably arcuate and each have the same surface area. In one embodiment an outer zone is asymmetrically designed to induce predictable wafer curling in a saddle shape.

Abstract: An electric heater has multiple zones, wherein the multiple zones include at least one zone which is subject to high loading (e.g. bottom zone) and, at least one zone is a non-metal heating element, and the rest of the zones (e.g. middle zone and top zone) are metal resistance heating elements of light gauge overbent.

Abstract: A method and apparatus for adjusting exhaust flow, and the apparatus has a programmable exhaust control regulator generating a first input signal to a motor control circuit, an exhaust flow meter generating a second input signal to the motor control circuit and a motor driven control valve moved to different positions according to the first and second input signals, the control valve being installed in an exhaust portion of the hot plate apparatus.

Abstract: A wafer support position control mechanism selectively positions a semiconductor wafer along an axis of excursion within a process chamber. An elevator tube protrudes through an orifice in the chamber surface and is connected at a first distal end to the wafer support. A compliant, dynamic seal within the orifice engages the elevator tube to form a gas curtain within a gap between the seal and the elevator tube to seal the process chamber. A moveable carriage is connected to the elevator tube at a second distal end for moving the wafer support along the axis of excursion. Rigid mechanical structure couples the second distal end of the elevator tube to the moveable carriage.

Abstract: A support structure for supporting a ceramic susceptor in a chamber is provided. The support structure includes a supporting portion joined with a back face of the ceramic susceptor. The supporting portion includes an inner space that is separated from the atmosphere of the chamber. A cooling system is provided below the supporting portion 6. At least one thermal control portion is provided between the cooling system and the supporting portion for reducing thermal conduction from the susceptor to the cooling system.

Abstract: Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette containing one or more heated substrate supports is moveably disposed within a heating chamber having an about uniform thermal profile therein to more uniformly heat the substrates.

Abstract: A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.