Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: A heat processing device that bakes a substrate having a resist coating film containing a volatile substance, includes a hot plate 2, a hot plate temperature control unit 3, a box member 1a, 5, 32 that defines a heat space 30 and a fluid space 31, air supply unit 18, 18A and suction unit 10, 10A that create an air current flowing in a horizontal direction in the fluid space 31, and a controller 22, 22A that controls the hot plate temperature control unit 3, the air supply unit 18, 18A, suction unit 10, 10A and the gas temperature control unit 19 so that a relationship of TF<TH?TS?TP is satisfied where TP represents a temperature of the hot plate, TS represents an upper surface temperature of the substrate W, TH represents a temperature of the heat space and TF represents a temperature of the fluid space.

Abstract: Annular reflecting rings are removably mounted on the upper and lower sides of a chamber side portion of a chamber. An annular recessed portion is formed sandwiched between the lower end face of the upper reflecting ring and the upper end face of the lower reflecting ring to surround a holding part for holding a semiconductor wafer. The outer peripheral surface of the recessed portion communicates with a transport opening. The formation of the recessed portion prevents the light emitted from halogen lamps and flash lamps from being non-uniformly reflected around the holding part to enter a semiconductor wafer, thus improving the uniformity of the in-plane temperature distribution in the semiconductor wafer during heat treatment.

Abstract: Temperature control in an RTP system can be improved by consideration of one or more witness structures different from the wafer (or other semiconductor object) being processed. For example, power coupling between the RTP heating system and witness structure can be used to adjust one or more control parameters, such as model definitions, that are used by the RTP system to control wafer heating. As another example, a stored trajectory of a desired witness structure temperature or other property can be used as a basis for control during a processing cycle. Thus, the witness structure may be controlled “closed-loop” while the wafer is heated “open-loop.” As a further example, a heat flux between the RTP heating system and witness structure can be used to determine radiant energy from the heating system that is incident on the witness structure. One or more control actions can be taken based on this incident energy.

Abstract: The present invention provides an oven that utilizes light emitting diode (LED) and or laser diode (LD) as heating devices. Such heating devices will enable a wide variety of heating modalities.

Abstract: A heating apparatus including a filament arranged in a vacuum heating vessel comprises a base plate arranged in the vacuum heating vessel to fix the filament at a predetermined position with respect to a conductive heater forming one surface of the vacuum heating vessel. The base plate comprises a plate body having a carbon fiber.

Abstract: An impurity-activating thermal process is performed after a target is subjected to an impurity introduction step. In this thermal process, while a spike RTA process including a holding period for holding a temperature at a predetermined temperature is performed, at least one iteration of millisecond annealing at a temperature higher than the predetermined temperature is performed during the holding period of the spike RTA process.

Abstract: An oven is described that can more evenly heat the semiconductor wafer, even though the wafer may warp during heating. The oven may provide relatively uniform heating even though the type and location of warping may be unpredictable for any given wafer. The oven may have a heating surface divided into a plurality of heating zones that may each independently provide a given amount of heat to the wafer. The amount of heat provided by each zone may be determined using signals from sensors that sense the warping of the wafer.

Abstract: Wafer supports are provided that have a diameter smaller than the diameter of the wafer that they are to support in a wafer boat. The perimeter of the wafer support is preferably continuous, extending completely around in a 360° span, and is sized to fit between the protrusions supporting a particular wafer in a wafer cassette. To load the wafer boat, an end effector removes the wafer support from a wafer boat and moves the wafer support into a wafer cassette, where the end effector moves upward to seat a wafer upon the wafer support. The wafer and wafer support are then transported to the wafer boat and the wafer support and the wafer are lowered onto a wafer slot surface in a wafer slot in the wafer boat, to transfer the wafer support and wafer from the end effector to the wafer boat.

Abstract: In an apparatus for heat-treating a substrate, a substrate holder unit including a substrate stage which is made of carbon or a carbon-covered material having high radiation ratio is arranged in a vacuum chamber to be vertically movable. A heating unit including a heat dissipation surface which opposes the substrate stage is provided above the substrate stage in the vacuum chamber. The substrate stage is moved close to the heat dissipation surface to heat the substrate in noncontact with it with radiation heat from the heat dissipation surface. The substrate holder unit includes a radiation plate and a reflection plate.

Abstract: A method of thermal treatment of components. The optimum thermal amplitude of the components at which the phase transformation kinetics of the components is maximum is determined by subjecting samples of the components to cyclic thermal processing at various thermal amplitudes by maintaining the upper temperature constant and varying the lower temperature. A thermal amplitude which is higher than the optimum thermal amplitude is selected. The components are subjected to cyclic thermal processing at the thermal amplitude selected above to achieve near uniform phase transformation kinetics of the components across their crosssection. The components are cooled down to room temperature to obtain components with near uniform microstructure and properties.

Abstract: A semiconductor wafer to be treated is placed in a horizontal position on a holding plate held by a susceptor. Six bumps are mounted upright on the upper surface of the holding plate. The semiconductor wafer is supported by the six bumps in point contacting relationship, and is held at a distance ranging from 0.5 mm to 3 mm from the upper surface of the holding plate. Light is directed from halogen lamps onto the semiconductor wafer held by the holding plate to preheat the substrate until the temperature of the semiconductor wafer is increased up to a predetermined temperature. Thereafter, flash light is directed from flash lamps onto the semiconductor wafer. A thin gas layer lying between the back surface of the semiconductor wafer and the upper surface of the holding plate acts as a resistance to suppress the motion of the semiconductor wafer, thereby preventing a crack in the semiconductor wafer.

Abstract: A device for heating a substrate with light from a flash lamp having a semiconductor switch connected in series to the flash lamp. After triggering of a trigger electrode of the flash lamp, a first drive signal and a second drive signal are output from a gate circuit. The time period when the semiconductor switch is on due to the second drive signal is longer than the time period that the semiconductor switch is on by the first drive signal. Then, the semiconductor switch is switched on and off by the first drive signal and the substrate temperature is increased to a temperature, which is lower than the desired temperature to be achieved, and is maintained a that temperature for a short time, after which the surface temperature of the substrate is increased to the desired target temperature.

Abstract: A ceramic heater attaining more uniform temperature distribution from the start to the end of cooling is provided. Further, in a cooling module used for cooling the heater, liquid leakage during use is prevented, degradation in cooling capability is prevented and the performance is maintained for a long period of use, and the manufacturing cost of the module is decreased. The ceramic heater includes a ceramic heater body and a cooling module cooling the heater body, and the cooling module has a structure formed by arranging a pipe in a trench formed in a plate-shaped structure.

Abstract: A device for assembling electronic circuits comprises a placing station (7) for placing circuit components on a circuit carrier (1) held at a placing location (17), a fixing station (19) for fixing the circuit components to the circuit carrier (1) under the effect of heat, and a belt conveyor means (9) for conveying a circuit carrier from the placing location (17) to a take-over location (29) of the fixing station (19). The fixing station (19) comprises a heatable zone (22) and a manipulator (21) for raising the circuit carrier (1) from the take-over location (29) and placing it in the heatable zone (22). A continuous belt conveyor (9) of the belt conveyor means extends from the placing location (17) up to the take-over location (29).

Abstract: A heat radiating plate storage tray has a plate main body, and a plurality of first projection portions provided on a first surface of the plate main body. A heat radiating plate having a rectangular recessed portion on a surface thereof is capable of being mounted on the first surface of the plate main body, a top face of the first projection portion supports a bottom face of the recessed portion of the heat radiating plate, and a height of the first projection portion is larger than a depth of the recessed portion of the heat radiating plate.

Abstract: An apparatus for thermally treating semiconductor substrates has a processing space which is defined by first walls substantially parallel to the semiconductor substrate and a second side wall connected to the first walls; a substrate holding device disposed in the processing space which defines a substrate retaining region for a semiconductor substrate in the processing space; and heating elements which are disposed in the processing space between at least one of the first walls and the substrate retaining region. The thermal gradient between the edge of the semiconductor substrate and the center of the semiconductor substrate can be effectively compensated by providing a shutter between the substrate retaining region and the heating elements which limits the radiation emitted in the processing space by the heating elements in the direction of the substrate retaining region.

Abstract: A heat treatment apparatus of the present invention includes a reaction tube, an exhaust unit for reducing the pressure in the reaction tube, a unit for introducing gas for heating or cooling a subject substrate disposed in the reaction tube, a light source for heating the subject substrate disposed in the reaction tube, and a unit for switching on/off the light source in a pulse form. Furthermore, the subject substrate is heated by a light source, using a first unit for heating the subject substrate by switching on/off the light source in a pulse form with a cycle of one second or shorter, and a second unit for heating the subject substrate by switching on/off the light source in a pulse form with a cycle of one second or longer.

Abstract: An apparatus for controlling the temperature of a warm bore of a superconducting magnet in a magnetic resonance imaging (MRI) includes a plurality of warm bore thermal sensors positioned on a surface of the warm bore and a plurality of heater elements positioned on the surface of the warm bore. A heater element thermal sensor is coupled to each of the plurality of heater elements and configured to monitor the temperature of the corresponding heater element. A controller is coupled to the plurality of warm bore thermal sensors and the plurality of heater element thermal sensors. The controller is configured to control each of the plurality of heater elements to maintain a predetermined temperature of the warm bore.

Abstract: A workpiece support is disclosed defining a workpiece-receiving surface. The workpiece support includes a plurality of fluid zones. A fluid, such as a gas, is fed to the fluid zones for contact with a workpiece on the workpiece support. The fluid can have selected thermoconductivity characteristics for controlling the temperature of the workpiece at particular locations. In accordance with the present disclosure, at least certain of the fluid zones are at different azimuthal positions. In this manner, the temperature of the workpiece can be adjusted not only in a radial direction but also in an angular direction.

Abstract: A temperature stabilization system, method, composition of matter and substrate processing system are disclosed. A heat absorbing material is disposed in thermal contact with a substrate. The heat absorbing material is characterized by a solid-liquid phase transition temperature that is in a desired temperature range for material processing the substrate. When the substrate is subjected to material processing that results in heat transfer into or out of the substrate the solid-liquid phase transition of the heat absorbing material stabilizes the temperature of the substrate.

Abstract: A heat treating device (50) has a cooling sleeve that covers a treating vessel (56) and a heater (100). The cooling sleeve has a cylindrical base member (110) and a cooling pipe (112) spirally wound on the outer peripheral surface hereof. The cooling pipe (112) is brazed to the base member (110).

Abstract: A heat treating apparatus includes a heating plate for heating a substrate coated with a coating liquid, a cooling plate for cooling the substrate and a heat pipe provided in the cooling plate, a cooling chamber being moved together with the cooling plate by the drive mechanism and accommodating a cooling liquid for cooling one end side of the heat pipe. The apparatus further includes a circulation passage provided in the heat treating apparatus to circulate the cooling liquid in the cooling chamber, a circulation pump for circulating the cooling liquid in the circulation passage; and a heat radiating member provided on the circulation passage to radiate the heat received by the cooling chamber to the outside of the heat treating apparatus.

Abstract: An apparatus for measuring an object temperature of an object, and including at least one heating apparatus having at least one heating element for heating an object via electromagnetic radiation. Also included is at least one first radiation detector that detects radiation coming from the object within a first field of vision, and, for determining correction parameters, a measuring device that detects the electromagnetic radiation that reaches the first field of vision from the at least one heating element up to a proportionality factor or a known intensity-dependent function.

Abstract: A heating system of a batch type reaction chamber for semiconductor device and a method thereof are disclosed. Each heat unit of heating groups has different height and caloric value at right angles according to the divided areas, thereby it can control an uniform temperature incline of the entire process space of the reaction chamber. Also, the reflecting plates are formed by each heating unit, so that the change of the heating unit can be simple. Furthermore, the divided reflecting blocks are adjacently connected to another reflecting block through the radiant wave shielding slit between them, so that the leakage of the radiant wave can be prevented and the reflecting blocks can be separately attached and deattached to each other. Also, the turning member is formed at the lower portion of the reflecting blocks, so that it can be easily attached and deattached.

Abstract: A halogen lamp assembly 20 for a substrate processing chamber 100 has a halogen lamp 22 and a ceramic heat sink monolith 24. The halogen lamp 22 includes a filament 28 and a pair of electrical connectors 30 encapsulated in an envelope 26 having a pinch seal end 34. The ceramic heat sink monolith 24 includes a block 38 and an array of spaced apart posts 40 projecting outwardly from the block 38. The block 38 includes a cavity 42 that has a recessed inner surface 44 shaped to mate with the pinch seal end 34 of the lamp 22 and an opening that allows the electrical connectors 30 of the halogen lamp 22 to pass through.

Abstract: A radiative heater for substrates in a physical vapor deposition process for fabricating films of materials in a wide dynamic range of process temperatures and gas pressures includes a heat radiating member made from a high-temperature and oxidation resistant material tolerant to vacuum conditions which separates a heater volume containing heating filaments from a process volume which contains a deposition substrate heated by radiation of the walls of the heat radiating member. The heating elements extend through the body of the heat radiating member as well as in proximity to its surface to provide delivery of the heat to the substrate. The heat radiating member is shaped to form a cavity containing the substrate. The walls of the cavity envelope the substrate and radiate heat towards the substrate. Alternatively, the substrate is adhered to the flat surface of the heat radiating member.

Abstract: A thermal processing chamber includes a substrate support rotating about a center axis and a lamphead of plural lamps in an array having a predetermined difference in radiance pattern between them. The radiance pattern includes a variation in diffuseness or collimation. In one embodiment, the center lines of all of the lamps are disposed away from the center axis. The array can be an hexagonal array, in which the center axis is located at a predetermined position between neighboring lamps.

Abstract: Apparatuses and methods for suppressing thermally induced motion of a workpiece. An apparatus includes a workpiece heating system configured to thermally induce motion of a workpiece, and further includes a damping member spaced apart from the workpiece and configured to apply a damping force to dampen the motion of the workpiece. The damping member may be spaced apart from a rest position of the workpiece by a distance sufficiently small that gas pressure between the damping member and the workpiece opposes the motion of the workpiece. The distance is preferably adjustable.

Abstract: A method of operating a bake plate disposed in a semiconductor processing chamber having a face plate opposing the bake plate includes providing a temperature control signal to the bake plate and measuring a face plate temperature associated with the face plate. The method also includes determining a difference between the face plate temperature and a predetermined temperature and modifying the temperature control signal provided to the bake plate in response to the determined difference.

Abstract: A method is provided for producing a processing atmosphere for coating substrates, with this method primarily being used in CVD-processes for precipitating an individual layer or a system of individual layers under defined processing atmospheres, in which processing gas is supplied to a coating chamber in a defined manner and exhausted. Via the method and related devices, a variable processing atmosphere is adjustable inside the coating chamber in a flexible, reliable and homogenous manner, and requiring a reduced maintenance and energy expense, even when the substrate is heated. The processing gas is created by at least one gas channel extending perpendicular in reference to the substrate by way of supplying gas flow or exhausting, with a lateral extension being equivalent to the width of the substrate.

Abstract: Bake apparatus for use in baking a substrate, such as a semiconductor wafer, includes a chamber, a hot plate installed within the chamber, and first and second buffer plates for uniformly dispersing hot gas. The hot plate is configured to support the semiconductor wafer. The gas is injected into the chamber through an air passageway and is exhausted through an air exhaust opening. The first buffer plate is disposed within an upper part of the chamber so as to uniformly disperse the gas within the chamber. The second buffer plate is disposed above the first buffer plate. The first and second buffer plates each have a number of discharge holes by which the gas is uniformly discharged from the chamber to the exhaust opening.

Abstract: A heater is disclosed. The comprises a housing; a reflector; and a pair of opposite connectors supported by the reflector and configured to support opposite ends of a heating element. The reflector is movable between a plurality of positions relative to the housing.

Abstract: A substrate treating device comprising a treatment chamber for storing and treating substrates and a heating device having a heating element and a heat insulator and heating the substrates in the treatment chamber by the heating element. The heating element is so formed that only its one end is held by a holding part, and a projection projected to the treatment chamber side at the intermediate part of the heating element and positioned in proximity to or in contact with the heating element is formed on the heat insulator. A pin with an enlarged part is passed through the heating element and the heat insulator at the intermediate part of the heating element and The enlarged part is positioned in proximity to or in contact with the heating element. The plurality of projections may be formed on the heat insulator and the pins may be disposed between these plurality of projections.

Abstract: A light emitting type heat treatment apparatus includes relatively low rated power density filament lamps and relatively high rated power density filament lamps, in which a heat treatment including a temperature raising heat process for raising a work piece quickly to a predetermined heat treatment temperature by light emitted from the filament lamps, and a constant temperature heating process succeeding the temperature raising heating process in which the work piece is heated while the predetermined heat treatment temperature is maintained, and a control unit which controls lighting state of the filament lamps so that while at least filament lamps with relatively high rated power density are lighted in the temperature raising heating process, in the constant temperature heating process, only filament lamps with relatively low rated power density are lighted.

Abstract: The present disclosure relates to an integrated wafer processing apparatus for fabricating semiconductor chips. This integrated wafer processing system combines the lithography patterning steps and irradiation curing steps of the patternable dielectric into one system. The patternable low-k material of the present disclosure also functions as a photoresist, i.e. is a photo-patternable low-k dielectric material.

Abstract: A radiant heating comprises a housing having an opening for positioning adjacent a media web in an imaging device. A pair of radiant heating panels is positionable in the housing to any one of a plurality of positions between and including a fully open position in which the pair of radiant heating panels are positioned side by side in the opening of the housing and facing the media web and a retracted position in which the pair of radiant heating panels are inside the housing and facing each other. The radiant panels are configured to emit thermal radiation in accordance with a variable thermal output signal. A panel driver is operably coupled to the pair of radiant heating panels for positioning the pair of radiant heating panels to at least one of the plurality of positions in response to a variable view factor signal.

Abstract: A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.

Abstract: A method of adjusting the heat transfer properties within a processing chamber is presented. Chamber properties may be determined and adjusted by adjusting the thermal mass of an edge ring disposed in the processing chamber.

Abstract: A device for use in a thermal annealing process for a wafer (T) of material chosen among the semiconductor materials for the purpose of detaching a layer from the wafer at an weakened zone. During annealing, the device applies (1) a basic thermal budget to the wafer, with the basic thermal budget being slightly inferior to the budget necessary to detach the layer, this budget being distributed in an even manner over the weakened zone; and (2) an additional thermal budget is also applied to the wafer locally in a set region of the weakened zone so as to initiate the detachment of the layer in this region.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: A method of heat-treating a workpiece includes generating an initial heating portion and a subsequent sustaining portion of an irradiance pulse incident on a target surface area of the workpiece. A combined duration of the initial heating portion and the subsequent sustaining portion is less than a thermal conduction time of the workpiece. The initial heating portion heats the target surface area to a desired temperature and the subsequent sustaining portion maintains the target surface area within a desired range from the desired temperature. Another method includes generating such an initial heating portion and subsequent sustaining portion of an irradiance pulse, monitoring at least one parameter indicative of a presently completed amount of a desired thermal process during the irradiance pulse, and modifying the irradiance pulse in response to deviation of the at least one parameter from an expected value.

Abstract: [Problems] To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing. [Means for Solving the Problems] The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 ?m to 1,000 ?m. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.

Abstract: A life estimating method for a heater wire, which can estimate the life of the heater wire more appropriately than conventional one, by utilizing data obtained during a period (e.g., a temperature rising period), in which a sign of disconnection of the heater wire is likely to be seen, upon estimating the life in advance before the heater wire used in a heating apparatus is disconnected. This method comprises the steps of: detecting a maximum value of magnitude of electric power supplied to the heater wire during the temperature rising period provided for elevating the temperature up to a heating temperature, by supplying the electric power to the heater wire prior to providing a heating process to a wafer or wafers.

Abstract: A lamp heating apparatus has: a chamber having a transparent window and housing a substrate; a heating lamp for heating the substrate by radiant heat of a heating lamp through the transparent window; a radiation thermometer that optically detects the temperature of the substrate and has a sensing portion provided in the chamber; a radical generating portion for generating a radical outside the chamber and supplying the radical into the chamber; and a light quantity sensor for determining the time for cleaning the inside of the chamber from a cloudy state of the transparent window and the surface of the sensing portion. This lamp heating apparatus enables a series of operations including heat annealing of the substrate and cleaning of the inside of the chamber. According to this invention, a lamp heating apparatus that has good temperature uniformity and reproductivity of heat processing conditions is obtained.

Abstract: A vertical heat processing apparatus includes a process chamber (5) defining a process field (A1) configured to accommodate a plurality of target substrates (W) supported at intervals in a vertical direction. The apparatus further includes a heating furnace (8) surrounding the process chamber (5) and including an electric heater (15), and an electric blower (16) configured to send a cooling gas into the heating furnace (8). A control section (22) executes, in order to converge the process field (A1) to a target temperature, performing power feeding to the heater (15) to heat up the process field (A1) to a predetermined temperature immediately below the target temperature, and at a time point when the process field (A1) reaches the predetermined temperature, decreasing the power feeding to the heater (15), and supplying the cooling gas from the blower (16) to forcibly cool the process field (A1).

Abstract: A substrate support assembly and method for controlling the temperature of a substrate within a process chamber are provided. A substrate support assembly includes an thermally conductive body comprising a stainless steel material, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, a cooling plate positioned below the thermally conductive body, a base support structure comprising a stainless steel material, positioned below the cooling plate and adapted to structurally support the thermally conductive body, and one or more cooling channels adapted to be supported by the base support structure and positioned between the cooling plate and the base support structure. A process chamber comprising the substrate support assembly of the invention is also provided.

Abstract: The present invention relates to an apparatus and method for heating a semiconductor processing chamber. One embodiment of the present invention provides a furnace for heating a semiconductor processing chamber. The furnace comprises a heater surrounding side walls of the semiconductor processing chamber, wherein the heater comprises a plurality of heating elements connected in at least two independently controlled zones, and a shell surrounding the heater.

Abstract: There is provided a heat processing furnace capable of quickly increasing and decreasing a temperature, while achieving improvement in durability. A heat processing furnace 2 comprises: a processing vessel 3 for accommodating an object to be processed w and performing thereto a heat process; and a cylindrical heater 5 disposed to surround an outer circumference of the processing vessel 3, for heating the object to be processed w. The heater 5 includes a cylindrical heat insulating member 16, and heating resistors 18 arranged along an inner circumferential surface of the heat insulating member 16. Each of the heating resistors 18 is formed of a strip-shaped member that is bent into a waveform having peak portions and trough portions. Pin members 20 are arranged in the heat insulating member 16 at suitable intervals therebetween, the pin members 20 holding the heating resistor 18 such that the heating resistor 18 is movable in a radial direction of the heater.