Abstract: An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.

Abstract: An example method of correcting a defect in a seat comprises the steps of: (a) imaging a seat to obtain an image of the seat, a portion of the seat having a defect; (b) applying a localized boundary around the portion of the seat having the defect within the image of the seat; (c) translating the localized boundary into a seat specific map of a baseline model of the seat such that a portion of the baseline model of the seat that corresponds to the portion of the seat having the defect within the image of the seat is disposed within a translated localized boundary; (d) selecting a predetermined path for an automated device to correct the portion of the seat having the defect based on the portion of the baseline model of the seat; and (e) correcting the portion of the seat having the defect.

Abstract: A testing device for inspecting an electronic device by causing contact terminals to electrically contact the electronic device, includes: a mounting table formed with a light transmission member opposite the side on which a inspection object is placed and having therein a coolant flow path through which a coolant capable of transmitting light flows; a light irradiation mechanism disposed so as to face the surface opposite the inspection object placement side of the mounting table, and having LEDs pointing toward the inspection object; and a controller controlling absorption of heat by the coolant and heating by the lights from the LEDs to control the temperature of the electronic device to be inspected. The controller controls the light output from the LEDs based on the measured temperature of the electronic device to be inspected and controls the absorption of heat by the coolant based on the LED light output.

Abstract: A heat processing system is disclosed. The heat processing system includes an enclosure, a heater, and a plurality of valves disposed on the enclosure. The heater is used to increase temperature within the enclosure. The plurality of valves have different sizes to uniformly and efficiently control the cooling within the enclosure.

Abstract: A system includes sensors, an interface and a controller. The interface receives feedback signals from the sensors. At least some of the sensors are disposed in an electrostatic chuck. The feedback signals are indicative respectively of fields of a heating plate of the electrostatic chuck. The controller, based on the fields and sets of calibration values, estimates values of a first field respectively for multiple points on a substrate. Each of the sets of calibration values corresponds respectively to one of multiple actuators. The calibration values, in each of the sets of calibration values, define amounts of contribution provided by a respective one of the actuators to the first field for the points. The controller changes physical states of the actuators based on the estimated values of the first field of the points to provide a predetermined temperature distribution profile across the electrostatic chuck.

Abstract: Methods for thermally calibrating reaction chambers are provided. In some embodiments, methods may include calculating a first correction factor of a first contact type temperature sensor within a first reaction chamber utilizing a first temperature sensor and applying the first correction factor to a first temperature controller to provide a first calibrated contact type temperature sensor. Embodiments may also include calculating a first calibration factor of a first non-contact type temperature sensor within the first reaction chamber utilizing the first calibrated contact type temperature sensor and applying the first calibration factor to the first non-contact type temperature sensor to provide a first calibrated non-contact type temperature sensor.

Abstract: A period from a time point when a wafer W is carried into a housing 10 to a time point when the wafer W after being exposed is completely ready to be carried out is set as a single cycle. A time period before a next cycle is begun and after the single cycle is completed is referred to as a standby time period. When an illuminance in dummy light emission is set to be Id; an illuminance in exposure, Is; a time length of the dummy light emission, Td; and a time length of the exposure, Ts, by setting the Id to satisfy an expression of Id=(Tp/Td)·Iw?(Ts/Td)·Is, an average illuminance within the single cycle is maintained constant between substrates.

Abstract: Methods for thermally calibrating reaction chambers are provided. In some embodiments, methods may include calculating a first correction factor of a first contact type temperature sensor within a first reaction chamber utilizing a first temperature sensor and applying the first correction factor to a first temperature controller to provide a first calibrated contact type temperature sensor. Embodiments may also include calculating a first calibration factor of a first non-contact type temperature sensor within the first reaction chamber utilizing the first calibrated contact type temperature sensor and applying the first calibration factor to the first non-contact type temperature sensor to provide a first calibrated non-contact type temperature sensor.

Abstract: Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.

Abstract: When an insulated gate bipolar transistor is incorporated in a drive circuit of a flash lamp, so that a light emission pattern of the flash lamp is freely defined, a temperature change pattern of a surface of a semiconductor wafer that receives the emission of flash light can be adjusted. The length of diffusion of impurities can be controlled by rising a surface temperature of the semiconductor wafer from a preheating temperature to a diffusion temperature through emission of flash light and maintaining the surface temperature at the diffusion temperature for a time period not shorter than 1 millisecond and not longer than 10 milliseconds. Subsequently, the impurities can be activated by rising the surface temperature of the semiconductor wafer from the diffusion temperature to an activation temperature.

Abstract: Embodiments of substrate support rings providing more uniform thickness of layers deposited or grown on a substrate are provided herein. In some embodiments, a substrate support ring includes: an inner ring with a centrally located support surface to support a substrate; and an outer ring extending radially outward from the support surface, wherein the outer ring comprises a reaction surface area disposed above and generally parallel to a support plane of the support surface, and wherein the reaction surface extends beyond the support surface by about 24 mm to about 45 mm.

Abstract: Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.

Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: Disclosed is a magnetic annealing apparatus including a processing container that performs a magnetic annealing processing on a plurality of substrates accommodated therein in a magnetic field; a substrate holder that holds the plurality of substrates substantially horizontally in the processing container; a division heater including a plurality of sub-division heaters and covering a substantially entire circumferential surface of an outer periphery of a predetermined region of the processing container along a longitudinal direction; a magnet installed to cover an outside of the division heater; and a controller configured to feedback-control a temperature of a predetermined control target heater among the plurality of sub-division heaters, and to control temperatures of the plurality of sub-division heaters other than the predetermined control target heater based on a control output obtained by multiplying a control output of the predetermined control target heater and a predetermined ratio.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: A method of dicing a wafer includes providing a wafer and etching the wafer to singulate die between kerf line segments defined within an interior region of the wafer and to singulate a plurality of wafer edge areas between the kerf line segments and a circumferential edge of the wafer. Each one of the plurality of wafer edge areas is singulated by kerf lines that each extend between one of two endpoints of one of the kerf line segments and the circumferential edge of the wafer.

Abstract: A system and method for heating a substrate while that substrate is being processed by an ion beam is disclosed. The system comprises two arrays of light emitting diodes (LEDs) disposed above and below the ion beam. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The LED arrays may be arranged so that the ion beam passes between the two LED arrays and strikes the substrate. As the substrate is translated relative to the ion beam, the LEDs from the LED arrays provide heating to the substrate.

Abstract: After a substrate implanted with impurities is heated to a preheating temperature, the front surface of the substrate is heated to a target temperature by irradiating the front surface of the substrate with a flash of light. Further, the flash irradiation is continued to maintain the temperature of the front surface near the target temperature for a predetermined time period. At this time, a flash irradiation time period in the flash heating step is made longer than a heat conduction time period required for heat conduction from the front surface of the substrate to the back surface thereof, and a difference in temperature between the front and back surfaces of the substrate is controlled to be always not more than one-half of an increased temperature from the preheating temperature to the target temperature during the flash irradiation.

Abstract: The present invention provides a substrate heat treatment apparatus capable of uniformly heat a substrate at high speed with less breakage of constituent members due to thermal expansion even at high temperature. An embodiment of the present invention is a substrate heat treatment apparatus to perform heat treatment for a substrate and includes: a peripheral ring capable of supporting the substrate; a connection ring; a lifting device to raise and lower the peripheral ring; balls having a lower heat conductivity than that of the peripheral ring; and a lamp to heat the substrate supported by the peripheral ring. The balls are different members from both of the peripheral ring and the connection ring. The lifting device raises and lowers the peripheral ring between a first position close to the lamp and a second position distant from the lamp.

Abstract: A test apparatus in which detectors and objects to be detected are rotated at the same speed, and a control method thereof are provided. The test apparatus includes a rotation driving unit that includes a rotary shaft; a microfluidic device that is loaded on the rotary shaft and includes at least one object to be detected; a rotating member that is mounted on the rotary shaft and includes at least one detector to detect the objects of the microfluidic device; and a controller configured to operate the rotation driving unit such that the microfluidic device and the rotating member are rotated at the same speed on the rotary shaft.

Abstract: A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor can include a reaction chamber having an interior and an entry port for insertion and removal of substrates, a gas inlet manifold communicating with the interior of the chamber for admitting process gasses to form a deposit on substrates held within the interior, a shutter mounted to the chamber, and one or more cleaning elements mounted within the chamber. The shutter can be movable between (i) a run position in which the cleaning elements are remote from the exhaust channel and (ii) a cleaning position in which the one or more cleaning elements engage with the shutter so that the cleaning elements remove deposited particles from the shutter upon movement of the shutter to the cleaning position.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: A temperature control pin, and the device and the method for supporting a substrate in the ultraviolet (UV) solidifying alignment process are disclosed. The temperature control pins includes a supporting pin for supporting a substrate, a heater being arranged within the supporting pin and is close to a top of the supporting pin, and a cooling system. The heater is controlled by the temperature control system to heat up the supporting pin. The cooling system is controlled by the temperature control system to cool down the supporting pin, and cooperatively operates with the heater to dynamically adjust the temperature of the supporting pins. When being heated, the temperature of the temperature control pins is adjusted by the temperature control system, and the substrate is heated uniformly such that the “Pin Mura” phenomenon is reduced or decreased.

Abstract: The rapid thermal cycling of a material is targeted. A microfluidic heat exchanger with an internal porous medium is coupled to tanks containing cold fluid and hot fluid. Fluid flows alternately from the cold tank and the hot tank into the porous medium, cooling and heating samples contained in the microfluidic heat exchanger's sample wells. A valve may be coupled to the tanks and a pump, and switching the position of the valve may switch the source and direction of fluid flowing through the porous medium. A controller may control the switching of valve positions based on the temperature of the samples and determined temperature thresholds. A sample tray for containing samples to be thermally cycled may be used in conjunction with the thermal cycling system. A surface or internal electrical heater may aid in heating the samples, or may replace the necessity for the hot tank.

Abstract: A substrate support device formed of a metal and having a high withstand voltage and a high thermal resistance is provided. A substrate support device according to the present invention includes a plate section formed of a metal; a shaft section connected to the plate section and formed of a metal; a heating element provided in the plate section; and an insulating film formed on a first surface of the plate section, the first surface opposite to the shaft section, by ceramic thermal spraying. The substrate support device may further include an insulating film formed on a second surface of the plate section which intersects the first surface of the plate section approximately perpendicularly.

Abstract: An aspect of the present invention relates to a susceptor comprising a counterbored groove receiving a semiconductor wafer in the course of manufacturing an epitaxial wafer by vapor phase growing an epitaxial layer on a surface of the semiconductor wafer, wherein a lateral wall of the counterbored groove is comprised of at least one flat portion and at least one protruding portion being higher than the flat portion, and a height of the flat portion is equal to or greater than a thickness of the semiconductor wafer.

Abstract: An apparatus for forming a solar cell includes a housing defining a vacuum chamber, a rotatable substrate support, at least one inner heater and at least one outer heater. The substrate support is inside the vacuum chamber configured to hold a substrate. The at least one inner heater is between a center of the vacuum chamber and the substrate support, and is configured to heat a back surface of a substrate on the substrate support. The at least one outer heater is between an outer surface of the vacuum chamber and the substrate support, and is configured to heat a front surface of a substrate on the substrate support.

Abstract: An apparatus for controlling the temperature of an object, comprises: a housing comprising: a cavity adapted to accept an object, an air inlet configured to allow air to flow into the cavity, and an air outlet configured to allow air to flow out of the cavity; and a nest configured to hold the object within the housing such that the smallest planar dimension of the object is substantially aligned with the smallest planar dimension of the cavity; wherein the nest and housing are adapted to direct air flow from the air inlet, substantially in parallel across at least one surface of the object and in the direction of the smaller dimension of the at least one surface, to the air outlet.

Abstract: Embodiments described herein provide a thermal processing apparatus with a heat source and a rotating substrate support opposite the heat source, the rotating substrate support comprising a support member with a light blocking member. The light blocking member may be an encapsulated component, or may be movably disposed inside the support member. The light blocking member may be opaque and/or reflective, and may be a refractory metal.

Abstract: The invention provides a compact multistage furnace of which the installation area in a factory is decreased. A multistage furnace is configured by piling up a plurality of furnace units in the vertical direction. Each of the furnace units includes an upper heater and a lower heater layered in the vertical direction and holding a heat insulator therebetween, a support pipe disposed on one end of the upper heater and extending in the horizontal direction, a support pipe disposed on other end of the upper heater and extending in the horizontal direction, and a plurality of work support bars mounted over the support pipes. The back surface of a work supported by the work support bars is opposed to the upper heater and the front surface of the work is opposed to the lower heater of the adjacent furnace unit disposed above.

Abstract: A method for cooling IR emitters in a heating device for warming preforms before processing them in a stretch blow or blow molding device. IR emitters are arranged on at least one sidewall of the heating device parallel to the transport direction of the preforms, with at least one back reflector arranged on the side of the IR emitters facing away from the performs. The preforms to be warmed include a mouth region and a longitudinal axis and the mouth region is cooled with a first coolant flow. An almost vertical second coolant flow passes between the IR emitters and the at least one back reflector, this second coolant flow being at least partially fed by the almost horizontal first coolant flow and/or is united with the almost horizontal first coolant flow. A heating device and cooling device are also provided.

Abstract: The present disclosure relates to a device and a method for baking a substrate. The device includes a hot plate, and a supporting member for supporting a substrate to be processed, wherein the supporting member is located between the hot plate and the substrate to be processed, and can move relative to the hot plate so as to adjust the contacting position of the supporting member with the substrate to be processed. With the device, the yield of the substrate can be increased.

Abstract: Embodiments of apparatus for providing radiant energy in the form of electromagnetic radiation are provided herein. In some embodiments a radiation source for electromagnetic radiation includes a tubular body formed from a material transparent to electromagnetic radiation; a filament disposed within the tubular body; and a reflective coating disposed on a portion of the tubular body to form a reflective portion, wherein the reflective portion is configured to minimize reflection of electromagnetic radiation emanating from the filament during use back to the filament.

Abstract: A temperature control pin, and the device and the method for supporting a substrate in the ultraviolet (UV) solidifying alignment process are disclosed. The temperature control pins includes a supporting pin for supporting a substrate, a heater being arranged within the supporting pin and is close to a top of the supporting pin, and a cooling system. The heater is controlled by the temperature control system to heat up the supporting pin. The cooling system is controlled by the temperature control system to cool down the supporting pin, and cooperatively operates with the heater to dynamically adjust the temperature of the supporting pins. When being heated, the temperature of the temperature control pins is adjusted by the temperature control system, and the substrate is heated uniformly such that the “Pin Mura” phenomenon is reduced or decreased.

Abstract: A taper assembly includes a taper housing comprising a coaxial conical shaped opening converging into a cylindrically shaped opening. A rotation housing is coupled to the taper housing by a coupling member. The rotation housing comprises a plurality of vent holes configured to vent gas through the taper assembly. A susceptor support assembly includes a central shaft having a base with a tapered bottom, a susceptor support, and a susceptor. The susceptor support includes a plurality of arms extending outwardly from the central shaft, wherein the central shaft extends through a central opening in the susceptor support. The plurality of arms are configured to house a plurality of balls in indentations in the arms. The susceptor includes a disk-shaped body having a plurality of grooves at an edge of the body. The plurality of grooves are configured to contact the plurality of balls at two or more contact points.

Abstract: Provided is an infrared radiation cooker in which heat from an infrared lamp is directly applied onto food being grilled, to thus cook the upper and inner parts of the food, as well as onto a rotatable pan, to thus simultaneously cook the lower part of the food. As a result, the food cooks evenly throughout without burning or creating residual odors from above to below as well as from outer to inner, and further the rotatable pan of respectively different structures can be selected depending on an intended cooking purpose, to thereby adjust height of the rotatable pan, which changes a heat intensity, to thus vary a cooking style, and which can be used to boil, grill or roast foods as one would like.

Abstract: Disclosed herein is a system for monitoring a heating apparatus that includes a motion detector configured to determine whether a person is proximate the heating apparatus. The motion detector is default deactivated. Further disclosed is a heat sensor configured to determine whether the heating apparatus has a temperature that is above a threshold. The heat sensor is default deactivated. A processor is in operable communication with each of the motion detector and the heat sensor configured to cyclically repeat a first countdown. The heat sensor is temporarily activated once during each of the repeated first countdowns. The processor is configured to perform a second countdown when the activated heat sensor determines that the heating apparatus has the temperature that is above the threshold. The second countdown is reset each time the motion detector determines that a person is proximate the heating apparatus.

Abstract: Provided is a thermal processing method including a first process comprising changing a set temperature of the heating plate from a first temperature to a second temperature; initiating a thermal processing for a first substrate before the temperature of the heating plate reaches the second temperature; obtaining temperature data of the heating plate after the thermal processing is initiated; changing the set temperature of the heating plate from the second temperature when the set temperature reaches the second temperature; and thermal processing of the first substrate using the heating plate for which the set temperature has been changed. The method further includes a second process comprising reinstating the temperature of the heating plate to the second temperature after the thermal processing of the first substrate; and thermal processing of a next substrate using the heating plate while the temperature of the heating plate is maintained at the second temperature.

Abstract: The present invention relates to a heater block for a rapid thermal processing apparatus, and more particularly, to a heater block in which heating lamps are densely arranged in a tessellation. The tessellation has a structure such that the plurality of heating lamps are arranged at right angles to form a zigzag line, and the thus-formed zigzagged line is repeated such that the zigzagged line is combined with the adjacent zigzagged line. According to the present invention, a temperature gradient caused by a void between heating lamps is prevented, and heating lamps are densely arranged to increase heat density for a heat radiation area as opposed to conventional heater blocks, thus achieving improved heat treatment efficiency using less energy.

Abstract: Embodiments of the present invention provide a heating assembly using a heat exchange device to cool a plurality of heating element. The heating assembly includes a plurality of heating elements, a cooling element having one or more cooling channels for receiving cooling fluid therein, and a heat exchange device disposed between the plurality of heating elements and the cooling element. The heat exchange device comprises a hot interface disposed adjacent to and in thermal contact with the plurality of heating elements and a cold interface disposed adjacent to and in thermal contact with the cooling element.

Abstract: A rheometer instrument with radiant heating of sample fluid with use of emissive/absorbing spaced surfaces of a sample container and an interior surface and of a chamber surrounding the sample container in part that is in a heating unit and controls for reliably reaching and maintaining target sample temperatures. The sample fluid can be pressurized.

Abstract: Embodiments of the invention generally relate to a support ring to support a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge to support the substrate, and a substrate support formed on a top surface of the edge lip. The substrate support may include multiple projections extending upwardly and perpendicularly from a top surface of the edge lip, or multiple U-shaped clips securable to an edge portion of the edge lip. The substrate support thermally disconnects the substrate from the edge lip to prevent heat loss through the edge lip, resulting in an improved temperature profile across the substrate with a minimum edge temperature gradient.

Abstract: An apparatus includes a C-shaped susceptor including a first substrate placement portion capable of placing the substrate, and an opening portion, a substrate stage including a second substrate placement portion capable of placing the substrate, and a susceptor support portion configured to support the susceptor, and a complementary portion formed separately from the susceptor support portion, engaged with the susceptor support portion, and configured to complement an opening portion of the susceptor to form the susceptor into an annular shape in a state in which the susceptor support portion supports the susceptor. When the substrate is placed on the second substrate placement portion and the second substrate placement portion is located at a predetermined distant position with respect to the heat radiation surface, the susceptor forms the annular shape together with the complementary portion to surround the substrate.

Abstract: In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.

Abstract: The first flash irradiation is performed on a semiconductor wafer preheated to 500° C. to heat a front surface of the semiconductor wafer. Thereafter, the second flash irradiation is performed to reheat the front surface of the semiconductor wafer before the temperature of the front surface of the semiconductor wafer becomes equal to the temperature of a back surface of the semiconductor wafer. Thus, the second flash irradiation is performed before the temperature of the front surface of the semiconductor wafer falls. Even if less energy is consumable by the second flash irradiation, the efficiency of heating of the front surface of the semiconductor wafer resulting from each iteration of the flash irradiation is improved.

Abstract: A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.

Abstract: A bowling ball maintenance device performs a de-oiling process on bowling balls having porous surfaces. The maintenance device may comprise a container sized to store at least one bowling ball within the container and structured to receive the bowling ball. A heating element is structured to warm an internal environment of the container at least to a level at which oil that may have accumulated in the pores of the ball begins to flow out of the pores. Embodiments also include a ball support cup within the container that is structured to contain the oil that has flowed out of the pores of the ball. Depending on the embodiment, the ball support cup may include three or more ball support extensions structured to support the ball in a stationary position over a height of the walls or edges of the ball support cup during operation of the maintenance device.

Abstract: A heat-generating apparatus includes a frame assembly and a securement assembly carried by the frame assembly. The securement assembly includes a panel member arranged in a first vertical plane for supporting a target material parallel to the first vertical plane. The heat-generating apparatus also includes a heating support assembly adjustably supported by the frame and including at least one heating element arranged in a second vertical plane that is parallel to and offset from the first vertical plane. The heating support assembly is adjustable along a horizontal first adjustment axis that is perpendicular to each of the first and second vertical planes and along a second adjustment axis that is disposed in or adjacent to the second vertical plane.

Abstract: Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more fins formed on an energy receiving surface of the edge ring. The fins may have at least one sloped side relative to a main body of the edge ring.