With Support For Workpiece Patents (Class 392/418)
  • Patent number: 10453716
    Abstract: Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: October 22, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Chun-Hsiung Tsai, Zi-Wei Fang, Chao-Hsiung Wang
  • Patent number: 10446397
    Abstract: When an insulated gate bipolar transistor is incorporated in a drive circuit of a flash lamp, so that a light emission pattern of the flash lamp is freely defined, a temperature change pattern of a surface of a semiconductor wafer that receives the emission of flash light can be adjusted. The length of diffusion of impurities can be controlled by rising a surface temperature of the semiconductor wafer from a preheating temperature to a diffusion temperature through emission of flash light and maintaining the surface temperature at the diffusion temperature for a time period not shorter than 1 millisecond and not longer than 10 milliseconds. Subsequently, the impurities can be activated by rising the surface temperature of the semiconductor wafer from the diffusion temperature to an activation temperature.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: October 15, 2019
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Takayuki Aoyama, Hikaru Kawarazaki
  • Patent number: 10211046
    Abstract: Embodiments of substrate support rings providing more uniform thickness of layers deposited or grown on a substrate are provided herein. In some embodiments, a substrate support ring includes: an inner ring with a centrally located support surface to support a substrate; and an outer ring extending radially outward from the support surface, wherein the outer ring comprises a reaction surface area disposed above and generally parallel to a support plane of the support surface, and wherein the reaction surface extends beyond the support surface by about 24 mm to about 45 mm.
    Type: Grant
    Filed: June 26, 2014
    Date of Patent: February 19, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Heng Pan, Lara Hawrylchak, Christopher S. Olsen
  • Patent number: 10167554
    Abstract: Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: January 1, 2019
    Assignee: Veeco Instruments Inc.
    Inventors: Bojan Mitrovic, Guanghua Wei, Eric A. Armour, Ajit Paranjpe
  • Patent number: 10077508
    Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: September 18, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Joseph M. Ranish, Paul Brillhart, Jose Antonio Marin, Satheesh Kuppurao, Balasubramanian Ramachandran, Swaminathan T. Srinivasan, Mehmet Tugrul Samir
  • Patent number: 10056286
    Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: August 21, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mehran Behdjat, Norman L. Tam, Aaron Muir Hunter, Joseph M. Ranish, Koji Nakanishi, Toshiyuki Nakagawa
  • Patent number: 9851149
    Abstract: Disclosed is a magnetic annealing apparatus including a processing container that performs a magnetic annealing processing on a plurality of substrates accommodated therein in a magnetic field; a substrate holder that holds the plurality of substrates substantially horizontally in the processing container; a division heater including a plurality of sub-division heaters and covering a substantially entire circumferential surface of an outer periphery of a predetermined region of the processing container along a longitudinal direction; a magnet installed to cover an outside of the division heater; and a controller configured to feedback-control a temperature of a predetermined control target heater among the plurality of sub-division heaters, and to control temperatures of the plurality of sub-division heaters other than the predetermined control target heater based on a control output obtained by multiplying a control output of the predetermined control target heater and a predetermined ratio.
    Type: Grant
    Filed: August 26, 2015
    Date of Patent: December 26, 2017
    Assignee: Tokyo Electron Limited
    Inventors: Mitsuru Yamazaki, Barry Clarke, Jattie Van Der Linde, Makoto Saito, Kazuyoshi Sugawara, Toshiji Abe, Tadashi Enomoto
  • Patent number: 9842759
    Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: December 12, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mehran Behdjat, Norman L. Tam, Aaron Muir Hunter, Joseph M. Ranish, Koji Nakanishi, Toshiyuki Nakagawa
  • Patent number: 9704748
    Abstract: A method of dicing a wafer includes providing a wafer and etching the wafer to singulate die between kerf line segments defined within an interior region of the wafer and to singulate a plurality of wafer edge areas between the kerf line segments and a circumferential edge of the wafer. Each one of the plurality of wafer edge areas is singulated by kerf lines that each extend between one of two endpoints of one of the kerf line segments and the circumferential edge of the wafer.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: July 11, 2017
    Assignee: Infineon Technologies AG
    Inventors: Joerg Ortner, Michael Roesner, Gudrun Stranzl, Rudolf Rothmaler
  • Patent number: 9685303
    Abstract: A system and method for heating a substrate while that substrate is being processed by an ion beam is disclosed. The system comprises two arrays of light emitting diodes (LEDs) disposed above and below the ion beam. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The LED arrays may be arranged so that the ion beam passes between the two LED arrays and strikes the substrate. As the substrate is translated relative to the ion beam, the LEDs from the LED arrays provide heating to the substrate.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: June 20, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan D. Evans, Jason M. Schaller, D. Jeffrey Lischer, Ala Moradian
  • Patent number: 9633868
    Abstract: After a substrate implanted with impurities is heated to a preheating temperature, the front surface of the substrate is heated to a target temperature by irradiating the front surface of the substrate with a flash of light. Further, the flash irradiation is continued to maintain the temperature of the front surface near the target temperature for a predetermined time period. At this time, a flash irradiation time period in the flash heating step is made longer than a heat conduction time period required for heat conduction from the front surface of the substrate to the back surface thereof, and a difference in temperature between the front and back surfaces of the substrate is controlled to be always not more than one-half of an increased temperature from the preheating temperature to the target temperature during the flash irradiation.
    Type: Grant
    Filed: October 18, 2012
    Date of Patent: April 25, 2017
    Assignee: SCREEN Holdings Co., Ltd.
    Inventor: Kenichi Yokouchi
  • Patent number: 9607868
    Abstract: The present invention provides a substrate heat treatment apparatus capable of uniformly heat a substrate at high speed with less breakage of constituent members due to thermal expansion even at high temperature. An embodiment of the present invention is a substrate heat treatment apparatus to perform heat treatment for a substrate and includes: a peripheral ring capable of supporting the substrate; a connection ring; a lifting device to raise and lower the peripheral ring; balls having a lower heat conductivity than that of the peripheral ring; and a lamp to heat the substrate supported by the peripheral ring. The balls are different members from both of the peripheral ring and the connection ring. The lifting device raises and lowers the peripheral ring between a first position close to the lamp and a second position distant from the lamp.
    Type: Grant
    Filed: June 12, 2013
    Date of Patent: March 28, 2017
    Assignee: CANON ANELVA CORPORATION
    Inventors: Takuji Okada, Toshikazu Nakazawa, Naoyuki Suzuki
  • Patent number: 9410942
    Abstract: A test apparatus in which detectors and objects to be detected are rotated at the same speed, and a control method thereof are provided. The test apparatus includes a rotation driving unit that includes a rotary shaft; a microfluidic device that is loaded on the rotary shaft and includes at least one object to be detected; a rotating member that is mounted on the rotary shaft and includes at least one detector to detect the objects of the microfluidic device; and a controller configured to operate the rotation driving unit such that the microfluidic device and the rotating member are rotated at the same speed on the rotary shaft.
    Type: Grant
    Filed: December 3, 2012
    Date of Patent: August 9, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong Young Kim, Jin Beom Hong
  • Patent number: 9388493
    Abstract: A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor can include a reaction chamber having an interior and an entry port for insertion and removal of substrates, a gas inlet manifold communicating with the interior of the chamber for admitting process gasses to form a deposit on substrates held within the interior, a shutter mounted to the chamber, and one or more cleaning elements mounted within the chamber. The shutter can be movable between (i) a run position in which the cleaning elements are remote from the exhaust channel and (ii) a cleaning position in which the one or more cleaning elements engage with the shutter so that the cleaning elements remove deposited particles from the shutter upon movement of the shutter to the cleaning position.
    Type: Grant
    Filed: January 8, 2013
    Date of Patent: July 12, 2016
    Assignee: Veeco Instruments Inc.
    Inventors: Chenghung Paul Chang, Keng Moy, Alexander I. Gurary
  • Patent number: 9330955
    Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: May 3, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mehran Behdjat, Norman L. Tam, Aaron Muir Hunter, Joseph M. Ranish, Koji Nakanishi, Toshiyuki Nakagawa
  • Patent number: 9277596
    Abstract: A temperature control pin, and the device and the method for supporting a substrate in the ultraviolet (UV) solidifying alignment process are disclosed. The temperature control pins includes a supporting pin for supporting a substrate, a heater being arranged within the supporting pin and is close to a top of the supporting pin, and a cooling system. The heater is controlled by the temperature control system to heat up the supporting pin. The cooling system is controlled by the temperature control system to cool down the supporting pin, and cooperatively operates with the heater to dynamically adjust the temperature of the supporting pins. When being heated, the temperature of the temperature control pins is adjusted by the temperature control system, and the substrate is heated uniformly such that the “Pin Mura” phenomenon is reduced or decreased.
    Type: Grant
    Filed: June 24, 2013
    Date of Patent: March 1, 2016
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
    Inventors: Tao Song, Guodong Zhao, Ming Liu, Tao Ma
  • Patent number: 9170028
    Abstract: The rapid thermal cycling of a material is targeted. A microfluidic heat exchanger with an internal porous medium is coupled to tanks containing cold fluid and hot fluid. Fluid flows alternately from the cold tank and the hot tank into the porous medium, cooling and heating samples contained in the microfluidic heat exchanger's sample wells. A valve may be coupled to the tanks and a pump, and switching the position of the valve may switch the source and direction of fluid flowing through the porous medium. A controller may control the switching of valve positions based on the temperature of the samples and determined temperature thresholds. A sample tray for containing samples to be thermally cycled may be used in conjunction with the thermal cycling system. A surface or internal electrical heater may aid in heating the samples, or may replace the necessity for the hot tank.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: October 27, 2015
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: Neil Reginald Beer, William J. Benett, James M. Frank, Joshua R. Deotte, Christopher Spadaccini
  • Patent number: 9153463
    Abstract: A substrate support device formed of a metal and having a high withstand voltage and a high thermal resistance is provided. A substrate support device according to the present invention includes a plate section formed of a metal; a shaft section connected to the plate section and formed of a metal; a heating element provided in the plate section; and an insulating film formed on a first surface of the plate section, the first surface opposite to the shaft section, by ceramic thermal spraying. The substrate support device may further include an insulating film formed on a second surface of the plate section which intersects the first surface of the plate section approximately perpendicularly.
    Type: Grant
    Filed: November 25, 2011
    Date of Patent: October 6, 2015
    Assignee: NHK Spring Co., Ltd.
    Inventors: Jun Futakuchiya, Junichi Miyahara, Daisuke Hashimoto
  • Patent number: 9123759
    Abstract: An aspect of the present invention relates to a susceptor comprising a counterbored groove receiving a semiconductor wafer in the course of manufacturing an epitaxial wafer by vapor phase growing an epitaxial layer on a surface of the semiconductor wafer, wherein a lateral wall of the counterbored groove is comprised of at least one flat portion and at least one protruding portion being higher than the flat portion, and a height of the flat portion is equal to or greater than a thickness of the semiconductor wafer.
    Type: Grant
    Filed: June 11, 2014
    Date of Patent: September 1, 2015
    Assignee: SUMCO CORPORATION
    Inventor: Junji Miyashita
  • Patent number: 9029737
    Abstract: An apparatus for forming a solar cell includes a housing defining a vacuum chamber, a rotatable substrate support, at least one inner heater and at least one outer heater. The substrate support is inside the vacuum chamber configured to hold a substrate. The at least one inner heater is between a center of the vacuum chamber and the substrate support, and is configured to heat a back surface of a substrate on the substrate support. The at least one outer heater is between an outer surface of the vacuum chamber and the substrate support, and is configured to heat a front surface of a substrate on the substrate support.
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: May 12, 2015
    Assignee: TSMC Solar Ltd.
    Inventors: Edward Teng, Ying-Chen Chao, Chih-Jen Yang
  • Patent number: 9002186
    Abstract: An apparatus for controlling the temperature of an object, comprises: a housing comprising: a cavity adapted to accept an object, an air inlet configured to allow air to flow into the cavity, and an air outlet configured to allow air to flow out of the cavity; and a nest configured to hold the object within the housing such that the smallest planar dimension of the object is substantially aligned with the smallest planar dimension of the cavity; wherein the nest and housing are adapted to direct air flow from the air inlet, substantially in parallel across at least one surface of the object and in the direction of the smaller dimension of the at least one surface, to the air outlet.
    Type: Grant
    Filed: October 2, 2012
    Date of Patent: April 7, 2015
    Assignee: Teradyne, Inc.
    Inventors: Larry W. Akers, Nathan Blosser, Brian S. Merrow
  • Publication number: 20150093100
    Abstract: Embodiments described herein provide a thermal processing apparatus with a heat source and a rotating substrate support opposite the heat source, the rotating substrate support comprising a support member with a light blocking member. The light blocking member may be an encapsulated component, or may be movably disposed inside the support member. The light blocking member may be opaque and/or reflective, and may be a refractory metal.
    Type: Application
    Filed: August 29, 2014
    Publication date: April 2, 2015
    Inventor: Joseph M. RANISH
  • Patent number: 8989565
    Abstract: The invention provides a compact multistage furnace of which the installation area in a factory is decreased. A multistage furnace is configured by piling up a plurality of furnace units in the vertical direction. Each of the furnace units includes an upper heater and a lower heater layered in the vertical direction and holding a heat insulator therebetween, a support pipe disposed on one end of the upper heater and extending in the horizontal direction, a support pipe disposed on other end of the upper heater and extending in the horizontal direction, and a plurality of work support bars mounted over the support pipes. The back surface of a work supported by the work support bars is opposed to the upper heater and the front surface of the work is opposed to the lower heater of the adjacent furnace unit disposed above.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: March 24, 2015
    Assignee: TOA Industries Co., Ltd.
    Inventors: Koji Hayashi, Taichi Shimizu
  • Patent number: 8983281
    Abstract: A method for cooling IR emitters in a heating device for warming preforms before processing them in a stretch blow or blow molding device. IR emitters are arranged on at least one sidewall of the heating device parallel to the transport direction of the preforms, with at least one back reflector arranged on the side of the IR emitters facing away from the performs. The preforms to be warmed include a mouth region and a longitudinal axis and the mouth region is cooled with a first coolant flow. An almost vertical second coolant flow passes between the IR emitters and the at least one back reflector, this second coolant flow being at least partially fed by the almost horizontal first coolant flow and/or is united with the almost horizontal first coolant flow. A heating device and cooling device are also provided.
    Type: Grant
    Filed: April 8, 2011
    Date of Patent: March 17, 2015
    Assignee: Krones AG
    Inventors: Wolfgang Schoenberger, Christian Holzer, Simon Fischer
  • Publication number: 20150071622
    Abstract: The present disclosure relates to a device and a method for baking a substrate. The device includes a hot plate, and a supporting member for supporting a substrate to be processed, wherein the supporting member is located between the hot plate and the substrate to be processed, and can move relative to the hot plate so as to adjust the contacting position of the supporting member with the substrate to be processed. With the device, the yield of the substrate can be increased.
    Type: Application
    Filed: January 21, 2014
    Publication date: March 12, 2015
    Inventor: Shih Ying Sun
  • Publication number: 20150063792
    Abstract: Embodiments of apparatus for providing radiant energy in the form of electromagnetic radiation are provided herein. In some embodiments a radiation source for electromagnetic radiation includes a tubular body formed from a material transparent to electromagnetic radiation; a filament disposed within the tubular body; and a reflective coating disposed on a portion of the tubular body to form a reflective portion, wherein the reflective portion is configured to minimize reflection of electromagnetic radiation emanating from the filament during use back to the filament.
    Type: Application
    Filed: September 4, 2014
    Publication date: March 5, 2015
    Inventor: Joseph M. Ranish
  • Publication number: 20150037019
    Abstract: A taper assembly includes a taper housing comprising a coaxial conical shaped opening converging into a cylindrically shaped opening. A rotation housing is coupled to the taper housing by a coupling member. The rotation housing comprises a plurality of vent holes configured to vent gas through the taper assembly. A susceptor support assembly includes a central shaft having a base with a tapered bottom, a susceptor support, and a susceptor. The susceptor support includes a plurality of arms extending outwardly from the central shaft, wherein the central shaft extends through a central opening in the susceptor support. The plurality of arms are configured to house a plurality of balls in indentations in the arms. The susceptor includes a disk-shaped body having a plurality of grooves at an edge of the body. The plurality of grooves are configured to contact the plurality of balls at two or more contact points.
    Type: Application
    Filed: June 4, 2014
    Publication date: February 5, 2015
    Inventor: Richard O. COLLINS
  • Publication number: 20150037018
    Abstract: A temperature control pin, and the device and the method for supporting a substrate in the ultraviolet (UV) solidifying alignment process are disclosed. The temperature control pins includes a supporting pin for supporting a substrate, a heater being arranged within the supporting pin and is close to a top of the supporting pin, and a cooling system. The heater is controlled by the temperature control system to heat up the supporting pin. The cooling system is controlled by the temperature control system to cool down the supporting pin, and cooperatively operates with the heater to dynamically adjust the temperature of the supporting pins. When being heated, the temperature of the temperature control pins is adjusted by the temperature control system, and the substrate is heated uniformly such that the “Pin Mura” phenomenon is reduced or decreased.
    Type: Application
    Filed: June 24, 2013
    Publication date: February 5, 2015
    Inventors: Tao Song, Guodong Zhao, Ming Liu, Tao Ma
  • Patent number: 8948579
    Abstract: Provided is an infrared radiation cooker in which heat from an infrared lamp is directly applied onto food being grilled, to thus cook the upper and inner parts of the food, as well as onto a rotatable pan, to thus simultaneously cook the lower part of the food. As a result, the food cooks evenly throughout without burning or creating residual odors from above to below as well as from outer to inner, and further the rotatable pan of respectively different structures can be selected depending on an intended cooking purpose, to thereby adjust height of the rotatable pan, which changes a heat intensity, to thus vary a cooking style, and which can be used to boil, grill or roast foods as one would like.
    Type: Grant
    Filed: January 16, 2009
    Date of Patent: February 3, 2015
    Inventor: Jin-Hee Lee
  • Patent number: 8921743
    Abstract: Disclosed herein is a system for monitoring a heating apparatus that includes a motion detector configured to determine whether a person is proximate the heating apparatus. The motion detector is default deactivated. Further disclosed is a heat sensor configured to determine whether the heating apparatus has a temperature that is above a threshold. The heat sensor is default deactivated. A processor is in operable communication with each of the motion detector and the heat sensor configured to cyclically repeat a first countdown. The heat sensor is temporarily activated once during each of the repeated first countdowns. The processor is configured to perform a second countdown when the activated heat sensor determines that the heating apparatus has the temperature that is above the threshold. The second countdown is reset each time the motion detector determines that a person is proximate the heating apparatus.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: December 30, 2014
    Assignee: Stovminder, LLC
    Inventors: Robert C. Ewell, Jr., Douglas L. Garmany, Charles T. Kelly, Charles Philip Wasilewski
  • Patent number: 8916804
    Abstract: Provided is a thermal processing method including a first process comprising changing a set temperature of the heating plate from a first temperature to a second temperature; initiating a thermal processing for a first substrate before the temperature of the heating plate reaches the second temperature; obtaining temperature data of the heating plate after the thermal processing is initiated; changing the set temperature of the heating plate from the second temperature when the set temperature reaches the second temperature; and thermal processing of the first substrate using the heating plate for which the set temperature has been changed. The method further includes a second process comprising reinstating the temperature of the heating plate to the second temperature after the thermal processing of the first substrate; and thermal processing of a next substrate using the heating plate while the temperature of the heating plate is maintained at the second temperature.
    Type: Grant
    Filed: July 27, 2011
    Date of Patent: December 23, 2014
    Assignee: Tokyo Electron Limited
    Inventor: Kenichi Shigetomi
  • Patent number: 8913884
    Abstract: The present invention relates to a heater block for a rapid thermal processing apparatus, and more particularly, to a heater block in which heating lamps are densely arranged in a tessellation. The tessellation has a structure such that the plurality of heating lamps are arranged at right angles to form a zigzag line, and the thus-formed zigzagged line is repeated such that the zigzagged line is combined with the adjacent zigzagged line. According to the present invention, a temperature gradient caused by a void between heating lamps is prevented, and heating lamps are densely arranged to increase heat density for a heat radiation area as opposed to conventional heater blocks, thus achieving improved heat treatment efficiency using less energy.
    Type: Grant
    Filed: August 4, 2010
    Date of Patent: December 16, 2014
    Assignee: AP Systems Inc.
    Inventors: Chang Kyo Kim, Tae Jong Ki, Choul Soo Kim, Ki Nam Kim
  • Patent number: 8901518
    Abstract: Embodiments of the present invention provide a heating assembly using a heat exchange device to cool a plurality of heating element. The heating assembly includes a plurality of heating elements, a cooling element having one or more cooling channels for receiving cooling fluid therein, and a heat exchange device disposed between the plurality of heating elements and the cooling element. The heat exchange device comprises a hot interface disposed adjacent to and in thermal contact with the plurality of heating elements and a cold interface disposed adjacent to and in thermal contact with the cooling element.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: December 2, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Joseph M. Ranish, Aaron Muir Hunter
  • Publication number: 20140311226
    Abstract: A rheometer instrument with radiant heating of sample fluid with use of emissive/absorbing spaced surfaces of a sample container and an interior surface and of a chamber surrounding the sample container in part that is in a heating unit and controls for reliably reaching and maintaining target sample temperatures. The sample fluid can be pressurized.
    Type: Application
    Filed: March 14, 2014
    Publication date: October 23, 2014
    Applicant: Brookfield Engineering Laboratories, Inc.
    Inventors: Christopher J Murray, James A Salomon
  • Patent number: 8865602
    Abstract: Embodiments of the invention generally relate to a support ring to support a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge to support the substrate, and a substrate support formed on a top surface of the edge lip. The substrate support may include multiple projections extending upwardly and perpendicularly from a top surface of the edge lip, or multiple U-shaped clips securable to an edge portion of the edge lip. The substrate support thermally disconnects the substrate from the edge lip to prevent heat loss through the edge lip, resulting in an improved temperature profile across the substrate with a minimum edge temperature gradient.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: October 21, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Joseph M. Ranish, Wolfgang R. Aderhold, Blake Koelmel, Ilya Lavitsky
  • Publication number: 20140308028
    Abstract: An apparatus includes a C-shaped susceptor including a first substrate placement portion capable of placing the substrate, and an opening portion, a substrate stage including a second substrate placement portion capable of placing the substrate, and a susceptor support portion configured to support the susceptor, and a complementary portion formed separately from the susceptor support portion, engaged with the susceptor support portion, and configured to complement an opening portion of the susceptor to form the susceptor into an annular shape in a state in which the susceptor support portion supports the susceptor. When the substrate is placed on the second substrate placement portion and the second substrate placement portion is located at a predetermined distant position with respect to the heat radiation surface, the susceptor forms the annular shape together with the complementary portion to surround the substrate.
    Type: Application
    Filed: June 25, 2014
    Publication date: October 16, 2014
    Applicant: CANON ANELVA CORPORATION
    Inventors: Kaori MASHIMO, Masami Shibagaki
  • Patent number: 8861944
    Abstract: In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.
    Type: Grant
    Filed: October 22, 2012
    Date of Patent: October 14, 2014
    Assignee: Dainippon Screen Mfg. Co., Ltd.
    Inventors: Hiroki Kiyama, Kenichi Yokouchi
  • Patent number: 8859443
    Abstract: The first flash irradiation is performed on a semiconductor wafer preheated to 500° C. to heat a front surface of the semiconductor wafer. Thereafter, the second flash irradiation is performed to reheat the front surface of the semiconductor wafer before the temperature of the front surface of the semiconductor wafer becomes equal to the temperature of a back surface of the semiconductor wafer. Thus, the second flash irradiation is performed before the temperature of the front surface of the semiconductor wafer falls. Even if less energy is consumable by the second flash irradiation, the efficiency of heating of the front surface of the semiconductor wafer resulting from each iteration of the flash irradiation is improved.
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: October 14, 2014
    Assignee: Dainippon Screen Mfg. Co., Ltd.
    Inventor: Kenichi Yokouchi
  • Patent number: 8854614
    Abstract: A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: October 7, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Hoon Kang, Taegon Kim, Hanmei Choi, Eunyoung Jo, Gonsu Kang, Sungho Kang, Sungho Heo
  • Patent number: 8853598
    Abstract: A bowling ball maintenance device performs a de-oiling process on bowling balls having porous surfaces. The maintenance device may comprise a container sized to store at least one bowling ball within the container and structured to receive the bowling ball. A heating element is structured to warm an internal environment of the container at least to a level at which oil that may have accumulated in the pores of the ball begins to flow out of the pores. Embodiments also include a ball support cup within the container that is structured to contain the oil that has flowed out of the pores of the ball. Depending on the embodiment, the ball support cup may include three or more ball support extensions structured to support the ball in a stationary position over a height of the walls or edges of the ball support cup during operation of the maintenance device.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: October 7, 2014
    Inventor: Wylie Ott
  • Publication number: 20140260512
    Abstract: A heat-generating apparatus includes a frame assembly and a securement assembly carried by the frame assembly. The securement assembly includes a panel member arranged in a first vertical plane for supporting a target material parallel to the first vertical plane. The heat-generating apparatus also includes a heating support assembly adjustably supported by the frame and including at least one heating element arranged in a second vertical plane that is parallel to and offset from the first vertical plane. The heating support assembly is adjustable along a horizontal first adjustment axis that is perpendicular to each of the first and second vertical planes and along a second adjustment axis that is disposed in or adjacent to the second vertical plane.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: Underwriters Laboratories Inc.
    Inventor: Underwriters Laboratories Inc.
  • Publication number: 20140270736
    Abstract: Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more fins formed on an energy receiving surface of the edge ring. The fins may have at least one sloped side relative to a main body of the edge ring.
    Type: Application
    Filed: May 27, 2014
    Publication date: September 18, 2014
    Applicant: Applied Materials, Inc.
    Inventors: Blake KOELMEL, Joseph M. RANISH, Abhilash J. MAYUR
  • Patent number: 8837924
    Abstract: The present invention provides a vacuum heating/cooling apparatus capable of rapidly heating and also rapidly cooling only a substrate while a high vacuum degree is maintained after film-formation processing. The vacuum heating/cooling apparatus according to an embodiment of the present invention includes a vacuum chamber (1), a halogen lamp (2) which emits heating light, a quartz window (3) for allowing the heating light to enter the vacuum chamber (1), a substrate supporting base (9) having a cooling function, and a lift pin (13) which causes the substrate (5) to stand still at a heating position P3 and a cooling position P1 and moves the substrate (5) between the heating position P3 and the cooling position P1.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: September 16, 2014
    Assignee: Canon Anelva Corporation
    Inventors: Koji Tsunekawa, Yoshinori Nagamine, Shinji Furukawa
  • Patent number: 8824875
    Abstract: There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.
    Type: Grant
    Filed: February 25, 2011
    Date of Patent: September 2, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Jun Yamawaku, Chishio Koshimizu, Tatsuo Matsudo
  • Patent number: 8822876
    Abstract: An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.
    Type: Grant
    Filed: April 6, 2011
    Date of Patent: September 2, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Hamid Tavassoli, Surajit Kumar, Kallol Bera, Xiaoping Zhou, Shane C. Nevil, Douglas A. Buchberger, Jr.
  • Publication number: 20140235072
    Abstract: A semiconductor wafer with (100) plane orientation has two orthogonal cleavage directions. A notch is provided so as to indicate one of these directions. During irradiation with a flash, the semiconductor wafer warps about one of two radii at an angle of 45 degrees with respect to the cleavage directions such that the upper surface thereof becomes convex, and the opposite ends of the other radii become the lowest position. Eight support pins in total are provided in upright position on the upper surface of a holding plate of a susceptor while being spaced at intervals of 45 degrees along the same circumference. The semiconductor wafer is placed on the susceptor such that any of the support pins supports a radius at an angle of 45 degrees with respect to a cleavage direction.
    Type: Application
    Filed: February 10, 2014
    Publication date: August 21, 2014
    Applicant: DAINIPPON SCREEN MFG CO., LTD.
    Inventor: Yoshio ITO
  • Patent number: 8809747
    Abstract: A method of operating a heating plate for a substrate support assembly used to support a semiconductor substrate in a semiconductor processing apparatus, wherein the heating plate comprises power supply lines and power return lines and respective heater zone connected between every pair of power supply line and power return line. The method reduces maximum currents carried by the power supply lines and power return lines by temporally spreading current pulses for powering the heater zones.
    Type: Grant
    Filed: April 13, 2012
    Date of Patent: August 19, 2014
    Assignee: Lam Research Corporation
    Inventors: John Pease, Neil Benjamin
  • Publication number: 20140226959
    Abstract: The invention concerns a device for heating an object (6) in an intense magnetic field, comprising:—a light source (1), an optic fibre (2) for transporting the light emitted by said light source (1) and emitting a beam of light in the direction of the object (6) to be heated, a converging optical system (3), a diaphragm (4) positioned at the focusing point of the optical system (3),—a reflector (5), whereof the inner wall is defined by the revolution of a semi-parabola around an axis perpendicular to the optical axis of the parabola and passing through the focal point of said parabola, the optical axis of said reflector (5) coinciding with the optical axis (A) of the optical system (3) and the focal point (F?) of said reflector coinciding with the focusing point of said optical system (3).
    Type: Application
    Filed: September 20, 2012
    Publication date: August 14, 2014
    Applicant: UNIVERSITE JOSEPH FOURIER - GRENOBLE 1
    Inventors: Pierre-Frederic Sibeud, Eric Beaugnon, Gilles Pont
  • Publication number: 20140212117
    Abstract: A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer.
    Type: Application
    Filed: March 28, 2014
    Publication date: July 31, 2014
    Inventor: Tatsufumi Kusuda
  • Publication number: 20140202027
    Abstract: The invention relates to a vacuum processing system for processing a substrate (2), with an enclosure (1) for carrying the substrate (2) to be treated in a substrate plane (4), whereby the enclosure (1) comprises a first reflecting means (6) and a heating means (5) having a first plane surface (10) and an opposed second plane surface (11), the heating means (5) is configured for irradiating heating energy only via the first surface (10) and/or via the second surface (11), the first reflecting means (6) is configured for reflecting the heating energy irradiated by the heating means (5) onto the substrate plane (4), and the heating means (5) is arranged such that the first surface (10) faces towards the first reflecting means (6) and the second surface (11) faces towards the substrate plane (4).
    Type: Application
    Filed: July 27, 2011
    Publication date: July 24, 2014
    Applicant: OERLIKON SOLAR AG, TRUBBACH
    Inventors: Edwin Pink, Philipp Hotz